Film pouring equipment

Abstract

The utility model discloses film pouring equipment which comprises a shell, a vacuum device and a heating device are arranged in a cavity in the shell, a plurality of air exhaust holes and a limiting structure are arranged on the upper surface of the shell, after a target wafer is placed in the limiting structure of the upper surface, the vacuum device extracts gas between the target wafer and the upper surface, and the heating device heats the target wafer. The heating device heats the upper surface, the heat of the upper surface is transferred to the target wafer, and the viscosity between the target wafer and the abnormal blue film attached to the surface of the target wafer can be reduced by heating the target wafer; in addition, the vacuum device extracts the gas between the target wafer and the upper surface, so that the target wafer can be firmly attached to the upper surface of the shell, the abnormal blue film is better torn off, the target wafer does not shift in the blue film tearing process, and the situation that the edge of the target wafer is broken can be avoided.

Description

Technical Field

[0001] The present disclosure generally relates to the technical field of semiconductor processing equipment, and more particularly to a film inversion device. Background Art

[0002] In the chip packaging process, if the cut blue film is left for too long or the blue film itself has abnormal viscosity, it will often cause difficulties in chip absorption and flying chips during the chip packaging process. Then the packaged chips cannot be used and the products are scrapped. If you want to use resources reasonably, you need to remove the abnormal blue film of the cut chips and re-apply the film. At this time, the film inversion process is required.

[0003] Currently, film pouring is mostly done manually, which can easily lead to chip displacement, scratches, and edge bursting. Utility Model Content

[0004] In view of the above-mentioned defects or shortcomings in the prior art, it is desired to provide a film inverting device, on which a vacuum device and a heating device are arranged. The vacuum device can adsorb the wafer well to prevent the wafer from being pulled up vertically during the film tearing process. At the same time, the heating device can heat the wafer to make the abnormal blue film easier to tear off, thereby preventing the wafer from bursting at the edge during the removal of the abnormal blue film.

[0005] In a first aspect, a film inversion device is provided, comprising:

[0006] The shell has a cavity inside and a plurality of air extraction holes on the upper surface;

[0007] A limiting structure, arranged on the upper surface of the shell;

[0008] A vacuum device, disposed in the cavity and connected to the air extraction hole through a pipeline;

[0009] a heating device, disposed in the cavity and connected to the upper surface;

[0010] When the target wafer is placed in the limiting structure, the vacuum device is controlled to extract the gas between the target wafer and the upper surface, and the upper surface is heated by the heating device.

[0011] In an optional embodiment, the vacuum device includes a suction power unit, a first gas transmission unit and a second gas transmission unit.

[0012] The suction power unit is connected to the first gas transmission unit via a first interface;

[0013] The suction power unit is connected to the second gas transmission unit through a second interface.

[0014] In an optional embodiment, the target disc includes a disc body and an iron ring.

[0015] The suction power unit performs a suction operation on the gas between the wafer body and the upper surface through the first gas transmission unit;

[0016] The suction power unit performs a suction operation on the gas between the iron ring and the upper surface through the second gas transmission unit.

[0017] In an optional embodiment, the first gas transmission part includes a first pipeline, a first solenoid valve, a second pipeline, a third pipeline, a fourth pipeline and a first Venturi valve;

[0018] The first interface of the suction power unit is connected to the first interface of the first solenoid valve through the first pipeline;

[0019] The second pipeline and the third pipeline are connected in parallel to the second interface and the third interface of the first solenoid valve;

[0020] One end of the fourth pipeline is connected to the convergence point of the second pipeline and the third pipeline, and the other end of the fourth pipeline is connected to the air extraction hole, and the air extraction hole is arranged on the upper surface capable of extracting gas between the wafer body and the upper surface;

[0021] The first Venturi valve is disposed on the second pipeline.

[0022] In an optional embodiment, the second gas transmission part includes a fifth pipeline, a second solenoid valve, a sixth pipeline, a seventh pipeline, an eighth pipeline and a second Venturi valve;

[0023] The second interface of the suction power unit is connected to the first interface of the second solenoid valve through the fifth pipeline;

[0024] The sixth pipeline and the seventh pipeline are connected in parallel to the second interface and the third interface of the second solenoid valve;

[0025] One end of the eighth pipeline is connected to the convergence point of the sixth pipeline and the seventh pipeline, and the other end of the eighth pipeline is connected to the air extraction hole, and the air extraction hole is arranged on the upper surface capable of extracting the gas between the iron ring and the upper surface;

[0026] The second Venturi valve is disposed on the sixth pipeline.

[0027] In an optional embodiment, a first regulating valve is provided on the first pipeline.

[0028] In an optional embodiment, a second regulating valve is provided on the fifth pipeline.

[0029] In an optional embodiment, a gas pressure detection device is further provided in the cavity, and the gas pressure detection device includes a first pressure detection device and a second pressure detection device.

[0030] The first pressure detection device is used to detect the pressure value of the gas between the wafer body and the upper surface;

[0031] The second pressure detection device is used to detect the pressure value of the gas between the iron ring and the upper surface.

[0032] In an optional embodiment, a temperature detection device is also provided in the cavity.

[0033] The temperature detection device is used to detect the temperature of the upper surface.

[0034] In an optional embodiment, the inverted film arrangement further includes a blue film storage rack;

[0035] The blue film storage rack includes a first bearing, a second bearing, a third bearing and a fourth bearing;

[0036] The first bearing is connected to the outer surface of the housing through a first bracket and a second bracket respectively;

[0037] The second bearing is arranged parallel to the upper surface along the length direction of the shell, and both ends of the second bearing are connected to the inner surface of the shell;

[0038] The third bearing is arranged with the second bearing spaced apart and parallel to the second bearing, and both ends of the third bearing are connected to the inner surface of the housing;

[0039] The fourth bearing is arranged at a distance from the third bearing and is arranged in parallel with the third bearing, and both ends of the fourth bearing are connected to the inner surface of the housing;

[0040] The blue film to be pasted is sleeved on the second bearing, and one side of the blue film to be pasted passes through the third bearing and then covers the fourth bearing;

[0041] During the rotation of the first bearing, the protective film to be pasted with the blue film is collected on the first bearing.

[0042] The present application provides a film inverting device, which includes a shell, a vacuum device and a heating device are arranged in the cavity inside the shell, and a plurality of exhaust holes and a limiting structure are arranged on the upper surface of the shell. When a target wafer is placed in the limiting structure on the upper surface, the vacuum device extracts the gas between the target wafer and the upper surface, and the heating device heats the upper surface. The heat of the upper surface is transferred to the target wafer. By heating the target wafer, the viscosity between the target wafer and the abnormal blue film attached to its surface can be reduced. In addition, the vacuum device extracts the gas between the target wafer and the upper surface so that the target wafer can be firmly attached to the upper surface of the shell, which not only makes it easier to tear off the abnormal blue film, but also prevents the target wafer from shifting during the tearing of the blue film, and can avoid the occurrence of edge bursting of the target wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0044] Figure 1 A schematic structural diagram of a film inversion device in one embodiment;

[0045] Figure 2 A schematic diagram of the structure of a vacuum device in one embodiment;

[0046] Figure 3 It is a schematic structural diagram of another film inversion device in one embodiment. Description of the drawings:

[0048] 100. Film pouring equipment;

[0049] 11. Shell; 22. Limiting structure; 33. Vacuum device; 44. Heating device; 55. Target wafer; 66. Blue film storage rack;

[0050] 111, air extraction hole;

[0051] 331, suction power unit; 332, first gas transmission unit; 333, second gas transmission unit;

[0052] 3321, first regulating valve; 3322, first pipeline; 3323, first solenoid valve; 3324, second pipeline; 3325, third pipeline; 3326, fourth pipeline; 3327, first Venturi valve;

[0053] 3331, second regulating valve; 3332, fifth pipeline; 3333, second solenoid valve; 3334, sixth pipeline; 3335, seventh pipeline; 3336, eighth pipeline; 3337, second Venturi valve;

[0054] 551, disc body; 552, iron ring;

[0055] 661, first bearing; 662, first bracket; 663, second bracket; 664, second bearing; 665, third bearing; 666, fourth bearing. DETAILED DESCRIPTION

[0056] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0057] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0058] In the chip packaging process, if the cut blue film is left for too long or the blue film itself has abnormal viscosity, it will often cause difficulties in chip absorption and flying chips during the chip packaging process. Then the packaged chips cannot be used and the products are scrapped. If you want to use resources reasonably, you need to remove the abnormal blue film of the cut chips and re-apply the film. At this time, the film inversion process is required.

[0059] At present, the film pouring is mostly done manually, and the specific manual operation process is as follows:

[0060] First, place the wafer with abnormal blue film on the table with the side with abnormal blue film facing up, and tear off the abnormal blue film by hand. When tearing off the blue film, try to ensure that the tearing angle is less than 5 degrees. However, manual operation can easily cause chip displacement, scratches, and edge bursting.

[0061] Based on the above problems, such as Figure 1 As shown, the present application provides a film inverting device 100 , including: a shell 11 , a limiting structure 22 , a vacuum device 33 and a heating device 44 .

[0062] The housing 11 includes a first sub-shell and a second sub-shell. The first sub-shell is a cube or a rectangular parallelepiped structure, including an upper surface, a lower bottom surface and three side surfaces.

[0063] The upper surface of the first subshell is a flat surface, and its material is, for example, rubber, plastic, ceramic, etc. The upper surface of the shell 11 of the film inverting device 100 provided in the present application is made of ceramic material, because there are many small holes inside the ceramic, and after being evacuated, its adsorption force is stronger, which can better fix the position of the target wafer 55 and prevent it from shifting.

[0064] A limiting structure 22 is disposed on the upper surface of the first subshell. The limiting structure 22 is, for example, at least one of a limiting column, a limiting groove, a limiting buckle, etc., and may also be a combination of multiple structures, which is not limited in the present application.

[0065] It is understandable that a plurality of exhaust holes 111 are provided on the upper surface of the first subshell, and the plurality of exhaust holes 111 are connected to the vacuum device 33 through pipes, and the vacuum device 33 is used to exhaust the gas between the target wafer 55 and the upper surface of the first subshell through the exhaust holes 111.

[0066] The first subshell is surrounded by an upper surface, a lower bottom surface and three side surfaces to form a cavity with an opening. The second subshell is a trapezoidal, rectangular or cube structure. The length of the second subshell is the same as that of the first subshell, and the second subshell also includes a bottom surface, a display panel and three side surfaces. The bottom surface, the display panel and the three side surfaces surround the second subshell to form a cavity with an opening.

[0067] It can be understood that the opening of the first subshell is connected to the opening of the second subshell, so that the housing 11 forms a sealed cavity. Figure 1 As shown, the display panel of the second subshell includes multiple touch keys and display windows, and the multiple touch keys include, for example, a switch key, a vacuuming key, a vacuum release key, a heating key, etc. The multiple display windows include, for example, a temperature data display window, a pressure display window, etc. This application does not limit this.

[0068] In an optional embodiment, the first sub-shell and the second sub-shell may be an integral part or a connecting part. If the first sub-shell and the second sub-shell are connecting parts, the connection may be any one of welding, clamping, bolting, bonding, etc.

[0069] For example, continue as Figure 1 As shown, the first sub-shell is a rectangular parallelepiped structure, and the second sub-shell is a trapezoidal structure. The longer bottom of the trapezoidal structure of the second sub-shell is connected to one side surface of the first sub-shell.

[0070] As described above, the first subshell and the second subshell are connected to form a sealed shell 11. The interior of the shell 11 is hollow to form a cavity. A vacuum device 33 and a heating device 44 are arranged in the cavity. The vacuum device 33 is connected to the exhaust hole 111 arranged on the first subshell through a pipeline, and is used to suck the gas between the target wafer 55 and the upper surface of the first subshell through the exhaust hole 111, so that the target wafer 55 can be more firmly attached to the upper surface of the first subshell, so as to avoid the displacement of the target wafer 55 during the process of tearing off the abnormal blue film on the target wafer 55, resulting in the occurrence of edge bursting of the target wafer 55.

[0071] In addition, after the abnormal blue film on the target wafer 55 is successfully removed, the vacuum device 33 can continue to inject air into the space between the target wafer 55 and the upper surface of the first subshell through the pipeline and the air extraction hole, so that the target wafer 55 can be more easily moved from the upper surface of the first subshell to other desired positions.

[0072] The structure of the vacuum device 33 is exemplarily described below:

[0073] Before describing the structure of the vacuum device 33, it is necessary to explain the target disc 55. The target disc 55 includes a disc body 551 and an iron ring 552. An abnormal blue film is provided on the iron ring 552, and the disc body 551 is provided on the abnormal blue film. The limiting structure 22 on the upper surface of the first sub-shell 11 is used to limit the position of the iron ring 552. Therefore, in order to better fix the target disc 55 and prevent it from shifting during the film tearing process, it is necessary not only to extract the gas on the disc body 551 and the upper surface of the first sub-shell 11, but also to extract the gas on the iron ring 552 and the upper surface of the first sub-shell 11. Since the iron ring 552 and the disc body 551 are respectively attached to different positions on the upper surface of the first sub-shell 11, they need to be separately sucked by different suction components, such as Figure 2 , so the vacuum device 33 includes a suction power unit 331, a first gas transmission unit 332 and a second gas transmission unit 333, wherein the suction power unit 331 is connected to the first gas transmission unit 332 through a first interface; the suction power unit 331 is connected to the second gas transmission unit 333 through a second interface. If the suction power unit 331 and the first gas transmission unit 332 cooperate to jointly suck the gas between the iron ring 552 and the upper surface of the first sub-shell 11; then, the suction power unit 331 and the second gas transmission unit 333 cooperate to jointly suck the gas between the disc body 551 and the upper surface of the first sub-shell 11. Alternatively, if the suction power unit 331 and the first gas transmission unit 332 cooperate to jointly suck the gas between the disc body 551 and the upper surface of the first sub-shell 11; then, the suction power unit 331 and the second gas transmission unit 333 cooperate to jointly suck the gas between the iron ring 552 and the upper surface of the first sub-shell 11, the present application does not limit this.

[0074] The suction power unit 331 is used to provide power for suction. Exemplarily, the suction power unit 331 is, for example, a compressed gas pump.

[0075] Continue as Figure 2 As shown, the first gas transmission part 332 includes a first pipeline 3322, a first solenoid valve 3323, a second pipeline 3324, a third pipeline 3325, a fourth pipeline 3326 and a first Venturi valve 3327;

[0076] The first interface of the suction power unit 331 is connected to the first interface of the first solenoid valve 3323 through the first pipeline 3322;

[0077] The second pipeline 3324 and the third pipeline 3325 are connected in parallel to the second interface and the third interface of the first solenoid valve 3323;

[0078] One end of the fourth pipe 3326 is connected to the convergence point of the second pipe 3324 and the third pipe 3325, and the other end of the fourth pipe 3326 is connected to the air extraction hole 111, which is provided on the upper surface capable of extracting gas between the wafer body 551 and the upper surface;

[0079] The first Venturi valve 3327 is disposed on the second pipeline 3324 .

[0080] Continue as Figure 2 As shown, the second gas transmission part 333 includes a fifth pipeline 3332, a second solenoid valve 3333, a sixth pipeline 3334, a seventh pipeline 3335, an eighth pipeline 3336 and a second Venturi valve 3337;

[0081] The second interface of the suction power unit 331 is connected to the first interface of the second solenoid valve 3333 through the fifth pipeline 3332;

[0082] The sixth pipeline 3334 and the seventh pipeline 3335 are connected in parallel to the second interface and the third interface of the second solenoid valve 3333;

[0083] One end of the eighth pipe 3336 is connected to the convergence point of the sixth pipe 3334 and the seventh pipe 3335, and the other end of the eighth pipe 3336 is connected to the air extraction hole 111, which is provided on the upper surface capable of extracting gas between the iron ring 552 and the upper surface;

[0084] The second Venturi valve 3337 is disposed on the sixth pipeline 3334 .

[0085] Since the first gas transmission part 332 and the second gas transmission part 333 have the same components, the functions of the components are also the same. The functions of the components are described below by taking the first gas transmission part 332 as an example.

[0086] The first solenoid valve 3323 has a sealed cavity inside, and through holes are opened at different positions on the cavity. Different through holes are connected to different pipelines, so the first solenoid valve 3323 can control the flow direction of the gas when powered on.

[0087] That is, when the first pipe 3322 is under the action of the power provided by the suction power unit 331, if the first solenoid valve 3323 opens the second pipe 3324 and closes the third pipe 3325 according to the control instruction, then under the action of the first Venturi valve 3327, the direction of the power provided by the suction power unit 331 can be changed, so that the gas flows in the direction of the suction hole 111-the fourth pipe 3326-the second pipe 3324 under the power provided by the suction power unit 331, so that the gas between the iron ring 552 and the upper surface of the first sub-shell 11 can be extracted, so that a vacuum environment is formed between the iron ring 552 or the disc body 551 and the upper surface of the first sub-shell 11, and then the iron ring 552 or the disc body 551 will be more stably fixed on the upper surface of the first sub-shell 11, preventing displacement during the film tearing process, and avoiding the occurrence of edge bursting of the target disc (55). It should be noted here that when the gas reaches the second pipeline 3324 , it can be discharged through other outlets of the first solenoid valve 3323 .

[0088] When the film tearing operation on the wafer body 551 is completed and the target wafer 55 needs to be removed from the upper surface of the first sub-shell 11, the first solenoid valve 3323 opens the third pipe 3325 and closes the second pipe 3324 according to the control of the control instruction to release the vacuum between the wafer body 551 or the iron ring 552 and the upper surface of the first sub-shell 11, that is, gas is filled inward under the power provided by the suction power unit 331, so as to more easily remove the wafer body 551 or the iron ring 552 from the upper surface of the first sub-shell 11. Then, driven by the power provided by the suction power unit 331, the gas flows in the direction of the first pipe 3322-the second interface of the first solenoid valve 3323-the third pipe 3325-the fourth pipe 3326-the exhaust hole 111, so as to rush the gas into between the disc body 551 or the iron ring 552 and the upper surface of the first sub-shell 11 through the exhaust hole 111, so as to reduce the adsorption force between the disc body 551 or the iron ring 552 and the upper surface of the first sub-shell 11, and facilitate the removal of the disc body 551 or the iron ring 552 from the upper surface of the first sub-shell 11.

[0089] It should be noted here that if the suction power unit 331 performs a suction operation on the gas between the disc body 551 and the upper surface through the first gas transmission unit 332, then the suction power unit 331 performs a suction operation on the gas between the iron ring 552 and the upper surface through the second gas transmission unit 333. If the suction power unit 331 performs a suction operation on the gas between the disc body 551 and the upper surface through the second gas transmission unit 333, then the suction power unit 331 performs a suction operation on the gas between the iron ring 552 and the upper surface through the first gas transmission unit 332. The above has described the working process of the first gas transmission unit 332. The working process of the second gas transmission unit 333 is the same as that of the first gas transmission unit 332. The two are only for different objects, which will not be repeated here.

[0090] It can be understood that since the first gas transmission part 332 and the second gas transmission part 333 perform gas suction operations on different objects respectively, the multiple gas suction holes 111 include a first gas suction hole and a second gas suction hole. The first gas transmission part 332 is connected to the first gas suction hole so that the gas between the wafer body 551 and the upper surface can be sucked through the first gas suction hole; the second gas transmission part 333 is connected to the second gas suction hole so that the gas between the iron ring 552 and the upper surface can be sucked through the second gas suction hole.

[0091] The first solenoid valve 3323, the second solenoid valve 3333 and the suction power unit 331 can all be controlled by turning the power on and off, so a switching power supply may be further provided in the cavity of the shell 11, one end of which is connected to the AC power supply, and the other end is connected to the first solenoid valve 3323, the second solenoid valve 3333, the suction power unit 331 and other components, for converting AC AC power into DC power to power the film inverting equipment 100.

[0092] It is understandable that, since the second sub-shell is provided with a plurality of buttons, each button controls the use state of the corresponding component, a control device is also provided in the inner cavity of the shell 11, one end of the control device is connected to the corresponding component, and the other end is connected to the corresponding button, and the user controls the corresponding component by touching or pressing the button. Exemplarily, the control device is, for example, a control circuit, a controller, a switch, etc., which is not limited here.

[0093] In an optional embodiment, a gas pressure detection device is further provided in the cavity. The gas pressure detection device includes a first pressure detection device and a second pressure detection device.

[0094] The first pressure detection device is used to detect the pressure value of the gas between the wafer body 551 and the upper surface; the second pressure detection device is used to detect the pressure value of the gas between the iron ring 552 and the upper surface.

[0095] Wherein, after detecting the corresponding gas pressure, the first pressure detection device and the second pressure detection device can also display the detected pressure values ​​on the corresponding display windows.

[0096] By setting the first pressure detection device and the second pressure detection device, the pressure value of the gas between the wafer body 551 and the upper surface and the pressure value of the gas between the iron ring 552 and the upper surface can be obtained in real time, so as to more intuitively determine whether the pressure value of the gas between the wafer body 551 and the upper surface and the pressure value of the gas between the iron ring 552 and the upper surface have reached the preset threshold value, and perform subsequent operations such as continuing suction or stopping suction according to the instructions.

[0097] In another embodiment, a first regulating valve 3321 is provided on the first pipeline 3322 and a second regulating valve 3331 is provided on the fifth pipeline 3332. The first regulating valve 3321 and the second regulating valve 3331 are respectively used to control the on-off between the suction power part 331 and the first gas transmission part 332 and the second gas transmission part 333, so as to realize the first gas transmission part 332 to suck the gas between the wafer body 551 and the upper surface and / or the second gas transmission part 333 to suck the gas between the iron ring 552 and the upper surface.

[0098] The heating device 44 is, for example, at least one of a heating resistor wire, an electric heating film, an electric heating tube, an electric heating sheet, an electric heat conductor, and an electric heat accumulator, wherein the heating device 44 is arranged in contact with the upper surface of the first sub-shell, and can transfer heat to the upper surface of the first sub-shell, and further transfer the heat to the target wafer 55 fixed on the upper surface of the first sub-shell, so that after the target wafer 55 is heated, the viscosity between the wafer body 551 in the target wafer 55 and the abnormal blue film adhered to the wafer body 551 is reduced, so that the process of removing the abnormal blue film will be easier, and the occurrence of edge bursting of the wafer body 551 can be further avoided.

[0099] In another embodiment, a temperature detection device is further provided on the first subshell, and the temperature detection device is used to detect the temperature of the surface of the first subshell, and display the temperature of the surface of the first subshell through one of the display windows, so as to provide data support for determining whether to start the heating device 44 for heating or turn off the heating device 44 to stop heating.

[0100] In another optional embodiment, the film-turning device 100 of the present application is also provided with an alarm device, which can alarm when the pressure value of the gas between the wafer body 551 and the upper surface and / or the pressure value of the gas between the iron ring 552 and the upper surface reaches or does not reach the corresponding preset threshold value, so as to achieve a reminder effect.

[0101] Optionally, the film inverting device 100 further includes a film tearing device, which includes, for example, a robot arm and a robot hand, wherein the robot arm is used to move the robot hand to a specified position, and the robot hand is used to perform the film tearing operation.

[0102] The present application also provides another film inversion device, such as Figure 3 As shown, the film inversion device includes a blue film storage rack 66 in addition to the above structure;

[0103] The blue film storage rack 66 includes a first bearing 661, a second bearing 664, a third bearing 665 and a fourth bearing 666;

[0104] The first bearing 661 is connected to the outer surface of the housing 11 through the first bracket 662 and the second bracket 663 respectively;

[0105] The second bearing 664 is arranged parallel to the upper surface along the length direction of the housing 11, and both ends of the second bearing 664 are connected to the inner surface of the housing 11;

[0106] The third bearing 665 is arranged at a distance from the second bearing 664 and is arranged in parallel with the second bearing 664. Both ends of the third bearing 665 are connected to the inner surface of the housing 11.

[0107] The fourth bearing 666 is arranged at a distance from the third bearing 665 and is arranged in parallel with the third bearing 665 . Both ends of the fourth bearing 666 are connected to the inner surface of the housing 11 .

[0108] The blue film to be pasted is sleeved on the second bearing 664, and one side of the blue film to be pasted passes through the third bearing 665 and covers the fourth bearing 666;

[0109] During the rotation of the first bearing 661 , the protective film to be pasted with the blue film is collected on the first bearing 661 .

[0110] The blue film storage rack 66 can be provided to better assist in the film sticking operation on the target wafer 55 .

[0111] Optionally, the film pouring equipment 100 also includes a rolling device (not shown in the figure), which includes a roller and a gripper. The above-mentioned robotic arm and robotic arm can control the rolling device to move to a specified position and then roll the blue film pasted on the surface of the target wafer 55 back and forth, so that the pasted blue film can be better adhered to the surface of the target wafer 55 to obtain a better film pasting effect.

[0112] Below, the steps of using the film pouring device 100 provided by the present application are exemplarily described. It should be noted that the order of the steps is not limited:

[0113] placing the wafer including the abnormal blue film with the surface without the abnormal blue film upward on the upper surface of the first subshell;

[0114] Control the suction power unit 331 and the first gas transmission unit 332 to work, so as to extract the gas between the wafer body 551 and the upper surface of the first sub-shell through the gas extraction hole 111-the fourth pipeline 3326-the second pipeline 3324-the first solenoid valve 3323, so that a vacuum is formed between the wafer body 551 and the upper surface of the first sub-shell;

[0115] Control the suction power unit 331 and the second gas transmission unit 333 to extract the gas between the iron ring 552 and the upper surface of the first subshell through the air extraction hole 111-the eighth pipeline 3336-the sixth pipeline 3334-the second solenoid valve 3333, so that a vacuum is formed between the iron ring 552 and the upper surface of the first subshell:

[0116] The blue film to be pasted is pulled out from the fourth roller by a manipulator and straightened, and the blue film to be pasted is pulled to the upper surface of the wafer body 551 and completely covered, and the roller device is driven by the manipulator to roll on the upper surface of the wafer body 551, so that the blue film and the surface of the wafer body 551 are adhered, and bubbles between the blue film and the surface of the wafer body 551 are removed;

[0117] Cut off the excess blue film on the edge of the iron ring 552;

[0118] Control the suction power unit 331 and the first gas transmission unit 332 to work, so as to fill the air between the wafer body 551 and the upper surface through the first pipeline 3322-the first solenoid valve 3323-the third pipeline 3325-the fourth pipeline 3326-the air extraction hole 111, so that a non-vacuum environment is formed between the wafer body 551 and the upper surface of the first subshell;

[0119] The suction power unit 331 and the second gas transmission unit 333 are controlled to work, so as to fill the air between the iron ring 552 and the upper surface of the first subshell through the fifth pipeline 3332-the second solenoid valve 3333-the seventh pipeline 3335-the eighth pipeline 3336-the air extraction hole 111, so that a non-vacuum environment is formed between the iron ring 552 and the upper surface of the first subshell:

[0120] Turning over the disc, and placing the disc including the abnormal blue film with the surface of the disc having the abnormal blue film facing upward on the upper surface of the first subshell;

[0121] Control the suction power unit 331 and the first gas transmission unit 33 to work, so as to extract the gas between the wafer body 551 and the upper surface of the first sub-shell through the gas extraction hole 111-the fourth pipeline 3326-the second pipeline 3324-the first solenoid valve 3323, so that a vacuum is formed between the wafer body 551 and the upper surface of the first sub-shell;

[0122] Control the suction power unit 331 and the second gas transmission unit 333 to extract the gas between the iron ring 552 and the upper surface of the first subshell through the air extraction hole 111-the eighth pipeline 3336-the sixth pipeline 3334-the second solenoid valve 3333, so that a vacuum is formed between the iron ring 552 and the upper surface of the first subshell:

[0123] Controlling the heating device 44 to perform a heating operation;

[0124] Control the robot arm and the robot hand to cooperate to tear off the abnormal blue film from the wafer body 551;

[0125] Control the suction power unit 331 and the first gas transmission unit 332 to work, so as to fill the air between the wafer body 551 and the upper surface through the first pipeline 3322-the first solenoid valve 3323-the third pipeline 3325-the fourth pipeline 3326-the air extraction hole 111, so that a non-vacuum environment is formed between the wafer body 551 and the upper surface of the first subshell;

[0126] Control the suction power unit 331 and the second gas transmission unit 333 to work, so as to fill the air into the space between the iron ring 552 and the upper surface of the first subshell through the fifth pipeline 3332-the second solenoid valve 3333-the seventh pipeline 3335-the eighth pipeline 3336-the air extraction hole 111, so that a non-vacuum environment is formed between the iron ring 552 and the upper surface of the first subshell;

[0127] The target wafer 55 is removed.

[0128] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other.

Claims

1. A film inversion device (100), characterized in that: include: The shell (11) has a cavity inside and a plurality of air extraction holes (111) on the upper surface; A limiting structure (22) arranged on the upper surface of the housing (11); A vacuum device (33) is disposed in the cavity and connected to the air extraction hole (111) via a pipeline; A heating device (44) is disposed in the cavity and connected to the upper surface; When the target wafer (55) is placed in the limiting structure (22), the vacuum device (33) is controlled to extract the gas between the target wafer (55) and the upper surface, and the upper surface is heated by the heating device (44).

2. The film pouring device (100) according to claim 1, characterized in that: The vacuum device (33) comprises a suction power unit (331), a first gas transmission unit (332) and a second gas transmission unit (333). The suction power unit (331) is connected to the first gas transmission unit (332) via a first interface; The suction power unit (331) is connected to the second gas transmission unit (333) via a second interface.

3. The film inversion device (100) according to claim 2, characterized in that: The target disc (55) comprises a disc body (551) and an iron ring (552). The suction power unit (331) performs a suction operation on the gas between the wafer body (551) and the upper surface through the first gas transmission unit (332); The suction power unit (331) performs a suction operation on the gas between the iron ring (552) and the upper surface through the second gas transmission unit (333).

4. The film inverting device (100) according to claim 3, wherein the plurality of air suction holes include a first air suction hole, characterized in that: The first gas transmission part (332) comprises a first pipeline (3322), a first solenoid valve (3323), a second pipeline (3324), a third pipeline (3325), a fourth pipeline (3326) and a first Venturi valve (3327); The first interface of the suction power unit (331) is connected to the first interface of the first solenoid valve (3323) via the first pipeline (3322); The second pipeline (3324) and the third pipeline (3325) are connected in parallel to the second interface and the third interface of the first solenoid valve (3323); One end of the fourth pipe (3326) is connected to the convergence point of the second pipe (3324) and the third pipe (3325), and the other end of the fourth pipe (3326) is connected to the first air extraction hole, and the first air extraction hole is arranged at a position capable of extracting gas between the wafer body (551) and the upper surface; The first Venturi valve (3327) is disposed on the second pipeline (3324).

5. The film inverting device (100) according to claim 3, wherein the plurality of air suction holes include a second air suction hole, characterized in that: The second gas transmission part (333) comprises a fifth pipeline (3332), a second solenoid valve (3333), a sixth pipeline (3334), a seventh pipeline (3335), an eighth pipeline (3336) and a second Venturi valve (3337); The second interface of the suction power unit (331) is connected to the first interface of the second solenoid valve (3333) via the fifth pipeline (3332); The sixth pipeline (3334) and the seventh pipeline (3335) are connected in parallel to the second interface and the third interface of the second solenoid valve (3333); One end of the eighth pipeline (3336) is connected to the convergence point of the sixth pipeline (3334) and the seventh pipeline (3335), and the other end of the eighth pipeline (3336) is connected to the second air extraction hole, and the second air extraction hole is arranged at a position capable of extracting gas between the iron ring (552) and the upper surface; The second Venturi valve (3337) is arranged on the sixth pipeline (3334).

6. The film pouring device (100) according to claim 4, characterized in that: The first pipeline (3322) is provided with a first regulating valve (3321).

7. The film pouring device (100) according to claim 5, characterized in that: The fifth pipeline (3332) is provided with a second regulating valve (3331).

8. The film pouring device (100) according to claim 3, characterized in that: A gas pressure detection device is also provided in the cavity, and the gas pressure detection device includes a first pressure detection device and a second pressure detection device. The first pressure detection device is used to detect the pressure value of the gas between the wafer body and the upper surface; The second pressure detection device is used to detect the pressure value of the gas between the iron ring and the upper surface.

9. The film pouring device (100) according to claim 1, characterized in that: A temperature detection device is also provided in the cavity. The temperature detection device is used to detect the temperature of the upper surface.

10. The film pouring device (100) according to claim 1, characterized in that: The inverted film arrangement also includes a blue film storage rack (66); The blue film storage rack (66) comprises a first bearing (661), a second bearing (664), a third bearing (665) and a fourth bearing (666); The first bearing (661) is connected to the outer surface of the housing (11) via a first bracket (662) and a second bracket (663) respectively; The second bearing (664) is arranged parallel to the upper surface along the length direction of the shell, and both ends of the second bearing (664) are connected to the inner surface of the shell (11); The third bearing (665) is arranged at a distance from the second bearing and is arranged in parallel with the second bearing (664); both ends of the third bearing (665) are connected to the inner surface of the housing (11); The fourth bearing (666) is arranged at a distance from the third bearing (665) and is arranged in parallel with the third bearing (665), and both ends of the fourth bearing (666) are connected to the inner surface of the housing (11); The blue film to be pasted is sleeved on the second bearing (664), and one side of the blue film to be pasted passes through the third bearing (665) and covers the fourth bearing (666); During the rotation of the first bearing (661), the protective film to be affixed with the blue film is collected on the first bearing (661).

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