Multi-mode multi-frequency power amplifier circuit and radio frequency module

Abstract

The utility model provides a multi-mode multi-frequency power amplifier circuit and a radio frequency module, and relates to the technical field of radio frequency. In the multi-mode multi-frequency power amplifier circuit, a first capacitor assembly and a frequency band selection circuit are arranged on an SOI layer, and the first capacitor assembly is a first capacitor assembly with an adjustable capacitance value. When the frequency band selection circuit selects different load lines based on one or more supported communication frequency bands, the capacitance value of the first capacitor assembly can be adjusted according to the working frequency band corresponding to the selected load line so as to assist the harmonic suppression circuit to control harmonic waves at a proper frequency point. And the linearity and the efficiency of the power amplifier are improved.

Description

Technical Field

[0001] The utility model relates to the field of radio frequency technology, and more specifically, to a multi-mode multi-frequency power amplifier circuit and a radio frequency module. Background Art

[0002] With the continuous development of science and technology, in order to adapt to different RF application scenarios, such as different operating frequency bands (including but not limited to the common LTE, N77 band and 5G, N28 band), different gain levels and different amplification factors, the industry usually adopts a multi-mode multi-band power amplifier module (Multi-Mode, Multi Band Power Amplifier, MMMPA) that integrates power amplifiers supporting low frequency, medium frequency and high frequency. Its operating frequency range may include 663MHz-2690MHz.

[0003] like Figure 1 As shown, Figure 1 The figure is a schematic diagram of the structure of a multi-mode multi-frequency power amplifier circuit in the prior art. The structure of a multi-mode multi-frequency power amplifier circuit in the prior art includes a power amplifier (referred to as PA), a harmonic suppression circuit, an output matching circuit, and a frequency band selection circuit. Among them, the harmonic suppression circuit is used to control the harmonics to adapt to the corresponding working frequency band to improve the performance of the power amplifier PA; the output matching circuit is used to match the output impedance of the power amplifier with the impedance of the load to maximize the transmission power; the frequency band selection circuit is used to select the corresponding working frequency band to expand the application scenario of the power amplifier PA.

[0004] Wherein, the harmonic suppression circuit includes capacitor C1a and inductor L1a. When the capacitance value of capacitor C1a is large, the harmonic suppression circuit can suppress the harmonics at the low frequency of the working frequency band, thereby improving the linearity and efficiency performance of the power amplifier PA in the low-frequency working state; when the capacitance value of capacitor C1a is small, the harmonic suppression circuit can suppress the harmonics at the high frequency of the working frequency band, thereby improving the linearity and efficiency of the power amplifier PA in the high-frequency working state. In order to balance the working performance of high frequency and low frequency in the working frequency band, in the prior art, the capacitance value of capacitor C1a is usually set to an intermediate value, so that the second harmonic suppression circuit can suppress the harmonics at the intermediate frequency point between high frequency and low frequency.

[0005] However, when the harmonics are suppressed at the middle frequency point between high frequency and low frequency, the second harmonic suppression circuit has limited effect on improving the performance of the power amplifier PA, especially is not conducive to improving the linearity of the power amplifier PA, which seriously limits the performance of the power amplifier PA. Utility Model Content

[0006] In view of the above problems, the present application provides a multi-mode multi-frequency power amplifier circuit and a radio frequency module, which can change the harmonic suppression performance of the harmonic suppression circuit, and improve the performance of the power amplifier PA according to the working frequency band by controlling the capacitance value of the harmonic suppression circuit. The specific scheme is as follows:

[0007] A first aspect of the present application provides a multi-mode multi-frequency power amplifier circuit, the multi-mode multi-frequency power amplifier circuit comprising: a power amplifier, a harmonic suppression circuit and a frequency band selection circuit;

[0008] The harmonic suppression circuit comprises a first inductor and a first capacitor component with adjustable capacitance, a first end of the first capacitor component is electrically connected to a first end of the first inductor, a second end of the first capacitor component is electrically connected to an output end of the power amplifier, and a second end of the first inductor is grounded;

[0009] The frequency band selection circuit is used to select different load lines based on at least one supported communication frequency band, and the different load lines correspond to different operating frequency bands;

[0010] The harmonic suppression circuit is used to control the harmonics to match the corresponding working frequency band;

[0011] The first capacitor component and the frequency band selection circuit are arranged on the SOI layer, and the frequency band selection circuit is further used to adjust the capacitance value of the first capacitor component based on the working frequency band corresponding to the selected load line.

[0012] In a possible implementation, the power amplifier is disposed on the HBT layer.

[0013] In a possible implementation, the first inductor is disposed on the HBT layer or on the substrate.

[0014] In a possible implementation, the first capacitor component includes:

[0015] A plurality of parallel branches are provided on each branch, and a switch and a first capacitor unit connected in series with the switch are provided on each branch.

[0016] In a possible implementation, the harmonic suppression circuit is a second harmonic suppression circuit, and the second harmonic suppression circuit is used to control the second harmonic to a frequency point corresponding to a working frequency band corresponding to the selected load line.

[0017] In a possible implementation, the multi-mode multi-frequency power amplifier circuit further includes: a third harmonic suppression circuit;

[0018] The third harmonic suppression circuit is used to control the third harmonic to a frequency point corresponding to the working frequency band corresponding to the selected load line.

[0019] In a possible implementation, the third harmonic suppression circuit includes a fifth inductor and a second capacitor component with an adjustable capacitance value;

[0020] The first end of the second capacitor component is electrically connected to the first end of the fifth inductor, the second end of the second capacitor component is electrically connected to the output end of the power amplifier, and the second end of the fifth inductor is grounded.

[0021] In a possible implementation, the second capacitor component is disposed on the SOI layer.

[0022] In a possible implementation, the second capacitor component includes:

[0023] A plurality of parallel branches are provided on each branch, and a switch and a second capacitor unit connected in series with the switch are provided on each branch.

[0024] In a possible implementation, the power amplifier is a multi-stage power amplifier, and an inter-stage harmonic suppression circuit is provided between two adjacent stages.

[0025] In a possible implementation, the inter-stage harmonic suppression circuit includes a sixth inductor and a third capacitor component with an adjustable capacitance value;

[0026] The first end of the third capacitor component is electrically connected to the first end of the sixth inductor, the second end of the third capacitor component is electrically connected to the output end of the power amplifier, and the second end of the sixth inductor is grounded.

[0027] In a possible implementation, the third capacitor component is disposed on the SOI layer.

[0028] In a possible implementation, the third capacitor component includes:

[0029] A plurality of parallel branches, each of which is provided with a switch and a third capacitor unit connected in series with the switch.

[0030] In a possible implementation, the multi-mode multi-frequency power amplifier circuit further includes: at least one bias circuit;

[0031] The at least one bias circuit is used to bias a transistor stage of the power amplifier.

[0032] In a possible implementation, the multi-mode multi-frequency power amplifier circuit further includes: an output matching circuit;

[0033] The output matching circuit is used to match the output impedance of the power amplifier with the impedance of the load corresponding to the selected load line.

[0034] In a possible implementation, the output matching circuit includes: a first capacitor, a second capacitor, a second inductor, a third inductor, and a fourth inductor;

[0035] The first end of the second inductor is electrically connected to the first end of the first capacitor, and the connection node is electrically connected to the output end of the power amplifier; the second end of the second inductor is electrically connected to the voltage end;

[0036] The second end of the first capacitor is electrically connected to the first end of the third inductor, and the connection node is electrically connected to the first end of the fourth inductor; the second end of the third inductor is grounded;

[0037] The second end of the fourth inductor is electrically connected to the frequency band selection circuit and the first end of the second capacitor respectively; the second end of the second capacitor is grounded.

[0038] In a possible implementation, the second capacitor is disposed on the SOI layer.

[0039] A second aspect of the present application provides a radio frequency module, which includes the multi-mode multi-frequency power amplifier circuit described in any one of the above items.

[0040] By means of the above technical solution, the present application provides a multi-mode multi-frequency power amplifier circuit in which the first capacitor component and the band selection circuit are arranged on the SOI layer, and the first capacitor component is a first capacitor component with adjustable capacitance. When the band selection circuit selects different load lines based on one or more supported communication bands, the capacitance of the first capacitor component can also be adjusted according to the working frequency band corresponding to the selected load line to assist the harmonic suppression circuit in controlling the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0042] Figure 1 It is a structural schematic diagram of a multi-mode multi-frequency power amplifier circuit in the prior art;

[0043] Figure 2 A schematic diagram of the structure of a multi-mode multi-frequency power amplifier circuit provided by an embodiment of the utility model;

[0044] Figure 3It is a structural schematic diagram of another multi-mode multi-frequency power amplifier circuit in the prior art;

[0045] Figure 4 A schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by an embodiment of the utility model;

[0046] Figure 5 A schematic diagram of the structure of a first capacitor component with adjustable capacitance provided by an embodiment of the utility model;

[0047] Figure 6 A schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by an embodiment of the utility model;

[0048] Figure 7 A schematic diagram of the structure of a second capacitor component with adjustable capacitance provided by an embodiment of the utility model;

[0049] Figure 8 A schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by an embodiment of the utility model;

[0050] Fig. 9 A schematic diagram of the structure of a third capacitor component with adjustable capacitance value provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0051] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0052] Before describing the technical solution of the present application, some technical terms involved in the field are explained here first, as follows:

[0053] RF chip: RF (Radio Frequency, referred to as RF), also known as radio frequency, wireless radio frequency, high frequency, etc., refers to the frequency range of 300kHz-300GHz. RF technology is closely related to contemporary wireless communication technology. Typical RF devices include filters, duplexers / multiplexers, power amplifiers, low noise amplifiers (LNA), RF switches, monolithic microwave integrated chips (MICC) and RF modules with integrated functions, etc. Furthermore, 5G refers to the fifth generation of mobile communication networks, which have fast transmission speeds and stable transmission signals, and are used in the field of high-frequency transmission. Currently, there are two major frequency ranges defined, FR1 (450MHz-6GHz, commonly known as Sub-6GHz) and FR2 (24.25GHz-52.6GHz, commonly known as the millimeter wave frequency band); some typical sub-bands include n77 (3300-4200MHz), n78 (3300-3800MHz) and n79 (4400-5000MHz). Related technical applications have put forward higher requirements for cost (requiring multiple chips or discrete devices), volume (requiring extremely high integration and smaller space occupation), process (mass production performance and design performance, yield, etc.), modularization (reducing debugging costs, etc.), bandwidth, performance, etc., which distinguishes it from previous RF designs. RF chips are an important branch of the application of RF technology in the semiconductor field. They are related fields that use semiconductor technology to process and manufacture RF integrated circuits, which are different from the technical solutions of discrete devices.

[0054] RF module: that is, RF front-end module (the back end is often discrete devices). Previously, since discrete devices can also meet the needs of manufacturers, there was a clear distinction between high-end equipment using modules and low-end equipment using discrete devices. Modules can provide higher integration and high performance. In the 5G era, due to the sharp increase in the number of RF components in a single product, the area occupied by discrete solutions exceeds the acceptable limit, and the debugging time will be longer. Therefore, modularization has become the development trend of the mobile communication market. Modules are divided into FEMiD (integrated switches, filters and duplexers), PAMiD (integrated multi-mode multi-band PA and FEMiD), LPAMiD (PAMiD plus LNA), DiFEM (RF switches and filters), LFEM (RF switches, low noise amplifiers and filters), etc. Among them, the design and manufacturing level of filters and other devices is the basis for module product development.

[0055] As an important component in the RF module, the low noise amplifier (LNA) is an active module. The low noise amplifier is critical to the performance of the transmitter system. It is used to select the main RF signal from the signal at the transmitter, amplify the amplitude and power of the signal, and keep the signal clear. Its parameters include output power, linearity, efficiency, and harmonic suppression.

[0056] Based on the content of the background technology, it is found in the process of the utility model creation of this application that Figure 1 In the structure of the multi-mode multi-frequency power amplifier circuit shown, it is impossible to dynamically change the capacitance value of capacitor C1a to adapt to different operating frequency bands. Only a middle approach can be adopted to adjust the capacitance value of capacitor C1a to a moderate value. However, this approach will enable the second harmonic suppression circuit to suppress the harmonics at the middle frequency point between high frequency and low frequency. When the harmonics are suppressed at the middle frequency point between high frequency and low frequency, the second harmonic suppression circuit has limited effect on improving the performance of the power amplifier PA, especially is not conducive to improving the linearity of the power amplifier PA, and seriously limits the performance of the power amplifier PA.

[0057] Based on this, the present application provides a design scheme that can change the harmonic suppression performance of the harmonic suppression circuit, and by controlling the capacitance value of the capacitor in the harmonic suppression circuit, the performance of the power amplifier PA can be improved according to the working frequency band. In order to make the above-mentioned objects, features and advantages of the utility model more obvious and easy to understand, the utility model is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0058] refer to Figure 2 , Figure 2 The schematic diagram of the structure of a multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model. Figure 2 As shown, the multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model includes: a power amplifier PA, a harmonic suppression circuit and a frequency band selection circuit.

[0059] The harmonic suppression circuit includes a first inductor L1 and a first capacitor component C1 with adjustable capacitance, wherein a first end of the first capacitor component C1 is electrically connected to a first end of the first inductor L1, a second end of the first capacitor component C1 is electrically connected to an output end of the power amplifier PA, and a second end of the first inductor L1 is grounded GND.

[0060] The frequency band selection circuit is used to select different load lines based on at least one supported communication frequency band, and the different load lines correspond to different operating frequency bands.

[0061] The harmonic suppression circuit is used to control harmonics to match the corresponding working frequency band.

[0062] The first capacitor component C1 and the frequency band selection circuit are arranged on the SOI layer, and the frequency band selection circuit is further used to adjust the capacitance value of the first capacitor component C1 based on the working frequency band corresponding to the selected load line.

[0063] Specifically, in the embodiments of the present utility model, refer to Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit in the prior art. Figure 3 The harmonic suppression circuit, power amplifier, and capacitor C2a in the output matching circuit in the prior art are all arranged on the HBT layer (Heterojunction Bipolar Transistor), the band selection circuit is arranged on the SOI layer, and the rest is arranged on the substrate. Figure 3 In the structure of the multi-mode multi-frequency power amplifier circuit shown, it is impossible to dynamically change the capacitance value of capacitor C1a to adapt to different operating frequency bands. Only a middle approach can be adopted to adjust the capacitance value of capacitor C1a to a moderate value. However, this approach will enable the second harmonic suppression circuit to suppress the harmonics at the middle frequency point between high frequency and low frequency. When the harmonics are suppressed at the middle frequency point between high frequency and low frequency, the second harmonic suppression circuit has limited effect on improving the performance of the power amplifier PA, especially is not conducive to improving the linearity of the power amplifier PA, and seriously limits the performance of the power amplifier PA.

[0064] In the present utility model embodiment, Figure 2 As shown, the first capacitor component C1 and the frequency band selection circuit are arranged on the SOI layer, and the first capacitor component C1 is a first capacitor component C1 with adjustable capacitance. In this way, when the frequency band selection circuit selects different load lines based on one or more supported communication frequency bands, the capacitance of the first capacitor component C1 can also be adjusted according to the working frequency band corresponding to the selected load line, so as to assist the harmonic suppression circuit to control the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier PA.

[0065] It should be noted that Figure 2 In the structure of the multi-mode multi-frequency power amplifier circuit shown, the frequency band selection circuit is described by taking the example of selecting four load lines, namely, four load lines corresponding to load 1, load 2, load 3 and load 4. The number of load lines is not limited in the embodiment of the utility model, and only four load lines are used as an example for description.

[0066] It is further necessary to explain that Figure 1 and Figure 3A multi-mode multi-frequency power amplifier circuit in the prior art shown in FIG. 1 further includes a capacitor C2a, a capacitor C3a, an inductor L2a, an inductor L3a and an inductor L4a, and the specific connection relationship thereof is as follows: Figure 1 and Figure 3 As shown, no further details are given here.

[0067] In an optional embodiment of the present invention, Figure 2 As shown, the power amplifier PA and the first inductor L1 can be arranged on the HBT layer. It should be noted that the first inductor L1 can also be arranged on the substrate. In the embodiment of the utility model, the first inductor L1 is arranged on the HBT layer as an example for description.

[0068] In an optional embodiment of the present invention, Figure 2 As shown, the multi-mode multi-frequency power amplifier circuit also includes: an output matching circuit, which is used to match the output impedance of the power amplifier PA with the impedance of the load corresponding to the selected load line to maximize the transmission power.

[0069] The output matching circuit includes: a first capacitor C2, a second capacitor C3, a second inductor L2, a third inductor L3 and a fourth inductor L4.

[0070] A first end of the second inductor L2 is electrically connected to a first end of the first capacitor C2, and a connection node is electrically connected to an output end of the power amplifier PA; a second end of the second inductor L2 is electrically connected to a voltage end Vcc.

[0071] The second end of the first capacitor C2 is electrically connected to the first end of the third inductor L3 , and the connection node is electrically connected to the first end of the inductor L4 ; the second end of the third inductor L3 is grounded GND.

[0072] The second end of the fourth inductor L4 is electrically connected to the frequency band selection circuit and the first end of the second capacitor C3 respectively; the second end of the second capacitor C3 is grounded GND.

[0073] For example, Figure 2 The first capacitor C2 shown may also be arranged on the HBT layer.

[0074] In an optional embodiment of the present utility model, reference Figure 4 , Figure 4 A schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by an embodiment of the utility model. Figure 4 As shown, the first capacitor component C1 with adjustable capacitance and the second capacitor C3 are disposed on the SOI layer.

[0075] Specifically, in the embodiment of the utility model, when the first capacitor component C1 with adjustable capacitance is disposed on the SOI layer, the second capacitor C3 can also be disposed on the SOI layer, thereby simplifying the preparation process of the multi-mode multi-frequency power amplifier circuit.

[0076] In an optional embodiment of the present utility model, reference Figure 5 , Figure 5 A schematic diagram of the structure of a first capacitor component with adjustable capacitance provided by an embodiment of the utility model. Figure 5 As shown, the first capacitor component C1 with adjustable capacitance provided by the embodiment of the utility model includes:

[0077] A plurality of parallel branches, each of which is provided with a switch and a capacitor unit connected in series with the switch.

[0078] Specifically, in the embodiment of the present utility model, the first capacitor component C1 with adjustable capacitance value can be a plurality of capacitor units connected in parallel. Figure 5 The first capacitor component C1 includes n parallel capacitor units C11, C12, ..., C1n, and switches S1, S2, ..., Sn. Since the first capacitor component C1 with adjustable capacitance is set on the SOI layer, the good logic of the switch on the SOI layer can be used to change the equivalent capacitance of multiple parallel capacitor units by turning the switch on and off. In other words, by controlling the working state of the switches on each branch, the capacitance of the first capacitor component C1 can be adjusted.

[0079] Exemplarily, when the frequency band selection circuit selects different load lines based on one or more supported communication frequency bands, the switching signal of the switch can also be controlled according to the working frequency band corresponding to the selected load line, thereby adjusting the capacitance value of the first capacitor component C1 to assist the harmonic suppression circuit in controlling the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier PA.

[0080] In an optional embodiment of the present utility model, reference Figure 6 , Figure 6 The following is a schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model. Figure 6 As shown, the harmonic suppression circuit is a second harmonic suppression circuit, and the second harmonic suppression circuit is used to control the second harmonic to a frequency point corresponding to the working frequency band corresponding to the selected load line.

[0081] In an optional embodiment of the present invention, Figure 6 As shown, the multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model also includes:

[0082] A third harmonic suppression circuit is used to control the third harmonic to a frequency point corresponding to the working frequency band corresponding to the selected load line.

[0083] The third harmonic suppression circuit includes a fifth inductor L5 and a second capacitor component C4 with adjustable capacitance. A first end of the second capacitor component C4 is electrically connected to a first end of the fifth inductor L5, a second end of the second capacitor component C4 is electrically connected to an output end of the power amplifier PA, and a second end of the fifth inductor L5 is grounded GND.

[0084] Specifically, in the embodiment of the utility model, the second capacitor component C4 can refer to the setting method of the first capacitor component C1, and can also be set on the SOI layer and set to a second capacitor component C4 with adjustable capacitance, so as to achieve the beneficial effects of the technical solution of the present application.

[0085] For example, Figure 6 As shown, the first capacitor component C1, the second capacitor component C4 and the band selection circuit are arranged on the SOI layer, and the first capacitor component C1 is a first capacitor component C1 with adjustable capacitance, and the second capacitor component C4 is a second capacitor component C4 with adjustable capacitance. In this way, when the band selection circuit selects different load lines based on one or more supported communication bands, the capacitance value of the first capacitor component C1 and the capacitance value of the second capacitor component C4 can also be adjusted according to the working frequency band corresponding to the selected load line, so as to assist the harmonic suppression circuit to control the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier PA.

[0086] In an optional embodiment of the present invention, Figure 6 As shown, the fifth inductor L5 can be arranged on the HBT layer. It should be noted that the fifth inductor L5 can also be arranged on the substrate. In the embodiment of the utility model, the fifth inductor L5 is arranged on the HBT layer as an example for description.

[0087] In an optional embodiment of the present utility model, reference Figure 7 , Figure 7 A schematic diagram of the structure of a second capacitor component with adjustable capacitance provided by an embodiment of the utility model. Figure 7 As shown, the second capacitor component C4 with adjustable capacitance provided by the embodiment of the utility model includes:

[0088] A plurality of parallel branches, each of which is provided with a switch and a capacitor unit connected in series with the switch.

[0089] Specifically, in the embodiment of the present utility model, the second capacitor component C4 with adjustable capacitance value can be a plurality of capacitor units connected in parallel. Figure 7 The circuit includes n parallel capacitor units C41, C42, ..., C4n, and switches K1, K2, ..., Kn. Since the second capacitor component C4 with adjustable capacitance value is arranged on the SOI layer, the good logic of the switch on the SOI layer can be used to change the equivalent capacitance value of multiple parallel capacitor units by turning the switch on and off. In other words, by controlling the working state of the switches on each branch, the capacitance value of the second capacitor component C4 can be adjusted.

[0090] Exemplarily, when the frequency band selection circuit selects different load lines based on one or more supported communication frequency bands, the switching signal of the switch can also be controlled according to the working frequency band corresponding to the selected load line, thereby adjusting the capacitance value of the second capacitor component C4 to assist the harmonic suppression circuit in controlling the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier.

[0091] In an optional embodiment of the present utility model, reference Figure 8 , Figure 8 The following is a schematic diagram of the structure of another multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model. Figure 8 As shown, in the multi-mode multi-frequency power amplifier circuit provided by the embodiment of the utility model, the power amplifier PA is a multi-stage power amplifier, and an inter-stage harmonic suppression circuit is arranged between two adjacent stages.

[0092] The inter-stage harmonic suppression circuit includes a sixth inductor L6 and a third capacitor component C5 with an adjustable capacitance value. A first end of the third capacitor component C5 is electrically connected to a first end of the sixth inductor L6, a second end of the third capacitor component C5 is electrically connected to an output end of the power amplifier PA, and a second end of the sixth inductor L6 is grounded GND.

[0093] Specifically, in the embodiment of the utility model, the third capacitor component C5 can refer to the setting method of the first capacitor component C1, and can also be set on the SOI layer and set to a third capacitor component C5 with adjustable capacitance, so as to achieve the beneficial effects of the technical solution of the present application.

[0094] For example, Figure 8As shown, the first capacitor component C1, the third capacitor component C5 and the band selection circuit are arranged on the SOI layer, and the first capacitor component C1 is a first capacitor component C1 with adjustable capacitance, and the third capacitor component C5 is a third capacitor component C5 with adjustable capacitance. In this way, when the band selection circuit selects different load lines based on one or more supported communication bands, the capacitance of the first capacitor component C1 and the capacitance of the third capacitor component C5 can also be adjusted according to the working frequency band corresponding to the selected load line, so as to assist the harmonic suppression circuit to control the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier PA.

[0095] In an optional embodiment of the present invention, Figure 8 As shown, the sixth inductor L6 can be arranged on the HBT layer. It should be noted that the sixth inductor L6 can also be arranged on the substrate. In the embodiment of the utility model, the sixth inductor L6 is arranged on the HBT layer as an example for description.

[0096] In an optional embodiment of the present utility model, reference Fig. 9 , Fig. 9 A schematic diagram of the structure of a third capacitor component with adjustable capacitance provided by an embodiment of the utility model. Fig. 9 As shown, the third capacitor component C5 with adjustable capacitance provided by the embodiment of the utility model includes:

[0097] A plurality of parallel branches, each of which is provided with a switch and a capacitor unit connected in series with the switch.

[0098] Specifically, in the embodiment of the present utility model, the third capacitor component C5 with adjustable capacitance value can be a plurality of capacitor units connected in parallel. Fig. 9 The third capacitor component C5 includes n parallel capacitor units C51, C52, ..., C5n, and switches G1, G2, ..., Gn. Since the third capacitor component C5 with adjustable capacitance is set on the SOI layer, the good logic of the switch on the SOI layer can be used to change the equivalent capacitance of multiple parallel capacitor units by turning the switch on and off. In other words, by controlling the working state of the switches on each branch, the capacitance of the third capacitor component C5 can be adjusted.

[0099] Exemplarily, when the frequency band selection circuit selects different load lines based on one or more supported communication frequency bands, the switching signal of the switch can also be controlled according to the working frequency band corresponding to the selected load line, thereby adjusting the capacitance value of the third capacitor component C5 to assist the harmonic suppression circuit in controlling the harmonics at a suitable frequency point, thereby improving the linearity and efficiency of the power amplifier PA.

[0100] In an optional embodiment of the present invention, the multi-mode multi-frequency power amplifier circuit further includes: at least one bias circuit, and the at least one bias circuit is used to bias the transistor stage of the power amplifier PA (the input stage and the output stage of the power amplifier).

[0101] Exemplarily, the at least one bias circuit may apply different bias values ​​to the transistor level of the power amplifier PA according to different communication protocols, thereby achieving the purpose of biasing the transistor level of the power amplifier PA.

[0102] Based on the above embodiments of the present invention, a radio frequency module is further provided in another embodiment of the present invention. The radio frequency module includes the multi-mode multi-frequency power amplifier circuit described in the above embodiments.

[0103] The RF module has the same technical effect as the multi-mode multi-frequency power amplifier circuit.

[0104] The above is a detailed introduction to a multi-mode, multi-frequency power amplifier circuit and a radio frequency module provided by the utility model. This article uses specific examples to illustrate the principles and implementation methods of the utility model. The description of the above embodiments is only used to help understand the method of the utility model and its core idea; at the same time, for general technical personnel in this field, according to the idea of ​​the utility model, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the utility model.

[0105] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0106] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device that includes a series of elements is inherent to the elements, or also includes elements inherent to these processes, methods, articles or devices. In the absence of further restrictions, the elements defined by the sentence "including a..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.

[0107] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A multi-mode multi-frequency power amplifier circuit, characterized in that: The multi-mode multi-frequency power amplifier circuit comprises: a power amplifier, a harmonic suppression circuit and a frequency band selection circuit; The harmonic suppression circuit comprises a first inductor and a first capacitor component with adjustable capacitance, a first end of the first capacitor component is electrically connected to a first end of the first inductor, a second end of the first capacitor component is electrically connected to an output end of the power amplifier, and a second end of the first inductor is grounded; The frequency band selection circuit is used to select different load lines based on at least one supported communication frequency band, and the different load lines correspond to different operating frequency bands; The harmonic suppression circuit is used to control the harmonics to match the corresponding working frequency band; The first capacitor component and the frequency band selection circuit are arranged on the SOI layer, and the frequency band selection circuit is further used to adjust the capacitance value of the first capacitor component based on the working frequency band corresponding to the selected load line.

2. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The power amplifier is arranged on the HBT layer.

3. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The first inductor is arranged on the HBT layer or on the substrate.

4. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The first capacitor component comprises: A plurality of parallel branches are provided on each branch, and a switch and a first capacitor unit connected in series with the switch are provided on each branch.

5. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The harmonic suppression circuit is a second harmonic suppression circuit, and the second harmonic suppression circuit is used to control the second harmonic to a frequency point corresponding to the working frequency band corresponding to the selected load line.

6. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The multi-mode multi-frequency power amplifier circuit further includes: a third harmonic suppression circuit; The third harmonic suppression circuit is used to control the third harmonic to a frequency point corresponding to the working frequency band corresponding to the selected load line.

7. The multi-mode multi-frequency power amplifier circuit according to claim 6, characterized in that: The third harmonic suppression circuit comprises a fifth inductor and a second capacitor component with adjustable capacitance value; The first end of the second capacitor component is electrically connected to the first end of the fifth inductor, the second end of the second capacitor component is electrically connected to the output end of the power amplifier, and the second end of the fifth inductor is grounded.

8. The multi-mode multi-frequency power amplifier circuit according to claim 7, characterized in that: The second capacitor component is disposed on the SOI layer.

9. The multi-mode multi-frequency power amplifier circuit according to claim 7, characterized in that: The second capacitor component comprises: A plurality of parallel branches are provided on each branch, and a switch and a second capacitor unit connected in series with the switch are provided on each branch.

10. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The power amplifier is a multi-stage power amplifier, and an inter-stage harmonic suppression circuit is arranged between two adjacent stages.

11. The multi-mode multi-frequency power amplifier circuit according to claim 10, characterized in that: The inter-stage harmonic suppression circuit comprises a sixth inductor and a third capacitor component with adjustable capacitance value; The first end of the third capacitor component is electrically connected to the first end of the sixth inductor, the second end of the third capacitor component is electrically connected to the output end of the power amplifier, and the second end of the sixth inductor is grounded.

12. The multi-mode multi-frequency power amplifier circuit according to claim 11, characterized in that: The third capacitor component is disposed on the SOI layer.

13. The multi-mode multi-frequency power amplifier circuit according to claim 12, characterized in that: The third capacitor component comprises: A plurality of parallel branches, each of which is provided with a switch and a third capacitor unit connected in series with the switch.

14. The multi-mode multi-frequency power amplifier circuit according to claim 1, characterized in that: The multi-mode multi-frequency power amplifier circuit further includes: at least one bias circuit; The at least one bias circuit is used to bias a transistor stage of the power amplifier.

15. The multi-mode multi-frequency power amplifier circuit according to any one of claims 1 to 14, characterized in that: The multi-mode multi-frequency power amplifier circuit further includes: an output matching circuit; The output matching circuit is used to match the output impedance of the power amplifier with the impedance of the load corresponding to the selected load line.

16. The multi-mode multi-frequency power amplifier circuit according to claim 15, characterized in that: The output matching circuit includes: a first capacitor, a second capacitor, a second inductor, a third inductor and a fourth inductor; The first end of the second inductor is electrically connected to the first end of the first capacitor, and the connection node is electrically connected to the output end of the power amplifier; the second end of the second inductor is electrically connected to the voltage end; The second end of the first capacitor is electrically connected to the first end of the third inductor, and the connection node is electrically connected to the first end of the fourth inductor; the second end of the third inductor is grounded; The second end of the fourth inductor is electrically connected to the frequency band selection circuit and the first end of the second capacitor respectively; the second end of the second capacitor is grounded.

17. The multi-mode multi-frequency power amplifier circuit according to claim 16, characterized in that: The second capacitor is arranged on the SOI layer.

18. A radio frequency module, characterized in that: The radio frequency module includes the multi-mode multi-frequency power amplifier circuit described in any one of claims 1-17.

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