Sleeve type large-size silicon single crystal growth furnace cooling device

Abstract

The utility model discloses a sleeved cooling device for a large-size silicon single crystal growth furnace, which belongs to the technical field of silicon single crystal growth furnaces and is characterized by comprising a silicon single crystal growth furnace body, a cooling mechanism is arranged on the surface of the silicon single crystal growth furnace body, and a bottom plate is fixedly connected to the bottom of the silicon single crystal growth furnace body. The surface of the silicon single crystal growth furnace body is fixedly sleeved with a water storage ring; the cooling mechanism comprises an annular pipe, a water injection pipe and an annular water drainage pipe, the annular pipe is movably arranged on the surface of the silicon single crystal growth furnace body in a sleeving mode, and the problems that most existing sleeving type large-size silicon single crystal growth furnaces only have internal circulating water cooling structures, the surfaces of the furnace bodies do not have cooling structures, the cooling efficiency of the furnace bodies is low, and the service life of the furnace bodies is prolonged are solved. And when a worker carries out other related work outside the furnace body, the worker is likely to touch the surface of the furnace body by mistake to cause scalding accidents, certain potential safety hazards exist, and therefore the using effect is affected.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon single crystal growth furnaces, in particular to a set-type cooling device for a large-size silicon single crystal growth furnace. Background Art

[0002] A silicon single crystal growth furnace is a device used to produce single crystal silicon. It is one of the most important equipment in the semiconductor material industry. Single crystal silicon is the basic material for manufacturing semiconductor devices and solar cells, and has very high purity and lattice integrity. With the development of the silicon single crystal production industry, the packaged large-size silicon single crystal growth furnace has become an existing published mature technology, and it has a mature circulating water cooling structure inside.

[0003] The silicon single crystal growth furnace is a device used to manufacture single crystals. Its internal temperature is as high as over 2000℃. If it is not cooled, the inside of the single crystal furnace will be seriously overheated and unable to work normally, and there is a possibility of safety accidents. Therefore, the single crystal furnace must be equipped with a cooling system to reduce the temperature inside the furnace to an appropriate range.

[0004] Most of the existing large-size silicon single crystal growth furnaces only have an internal circulating water cooling structure. The surface of the furnace body does not have a cooling structure, which makes the cooling efficiency of the furnace body low. In addition, when the staff performs other related work outside the furnace body, they are prone to accidentally touch the surface of the furnace body and cause scalding accidents, which poses certain safety hazards. Utility Model Content

[0005] The utility model provides a set-type cooling device for a large-size silicon single crystal growth furnace, aiming to solve the problem that most of the existing set-type large-size silicon single crystal growth furnaces only have an internal circulating water cooling structure, and the surface of the furnace body does not have a cooling structure, so that the cooling efficiency of the furnace body is low, and when the staff performs other related work outside the furnace body, it is easy to accidentally touch the surface of the furnace body and cause scalding accidents, which poses certain safety hazards and thus affects the use effect.

[0006] The utility model is implemented as follows: a set-type large-size silicon single crystal growth furnace cooling device comprises a silicon single crystal growth furnace body, a cooling mechanism is arranged on the surface of the silicon single crystal growth furnace body, a bottom plate is fixedly connected to the bottom of the silicon single crystal growth furnace body, and a water storage ring is fixedly sleeved on the surface of the silicon single crystal growth furnace body;

[0007] The cooling mechanism includes a ring pipe, a water injection pipe and a ring drain pipe. The ring pipe is movably sleeved on the surface of the silicon single crystal growth furnace body, the bottom of the water injection pipe is fixedly connected to the top of the ring pipe, and the top of the ring drain pipe is fixedly connected to the bottom of the ring pipe.

[0008] In order to achieve the effect of conveniently limiting the ring tube and the silicon single crystal growth furnace body together, as a preferred set-type large-size silicon single crystal growth furnace cooling device of the utility model, the top of the ring tube is fixedly connected with a fixed block, the number of the fixed blocks is several and evenly distributed on the top of the ring tube, and a screw is provided on the side of the fixed block away from the silicon single crystal growth furnace body, and the screw passes through the fixed block on the side close to the fixed block and is connected to the internal thread of the silicon single crystal growth furnace body.

[0009] In order to facilitate the extraction of external cooling water from the water storage ring, a preferred set-type large-size silicon single crystal growth furnace cooling device of the utility model has a pump body fixedly connected to the left side of the water storage ring, and the bottom of the pump body is fixedly connected to the top of the base plate.

[0010] In order to facilitate the scraping of dirt on the surface of the silicon single crystal growth furnace body, a set-type large-size silicon single crystal growth furnace cooling device is preferably used in the utility model. The surface movable sleeve of the silicon single crystal growth furnace body is provided with a scraper ring, and both sides of the top of the scraper ring are fixedly connected with pull blocks, and the bottom of the scraper ring is in contact with the bottom of the inner wall of the water storage ring.

[0011] In order to facilitate the opening of the front side of the water storage ring, as a preferred set of large-size silicon single crystal growth furnace cooling device of the utility model, a drainage hole is opened inside the water storage ring, and a sealing cover is provided on the front side of the water storage ring, and the surface of the sealing cover is in contact with the inner wall of the drainage hole.

[0012] In order to facilitate the discharge of external cooling water to the surface of the silicon single crystal growth furnace body, as a preferred set of large-size silicon single crystal growth furnace cooling devices of the utility model, the bottom of the annular drain pipe is inclined toward the side close to the silicon single crystal growth furnace body.

[0013] In order to prevent the scraper ring from scratching the surface of the silicon single crystal growth furnace body, as a preferred package-type large-size silicon single crystal growth furnace cooling device of the utility model, the scraper ring is made of high-toughness nylon plastic.

[0014] Compared with the prior art, the beneficial effects of the utility model are:

[0015] The set-type large-size silicon single crystal growth furnace cooling device, by fixing the ring pipe on the surface of the silicon single crystal growth furnace body, connects the external cooling water source with the water injection pipe, and then controls the pump body to work. At this time, the external cooling water will be discharged through the ring drain pipe inclined to one side of the silicon single crystal growth furnace body, and the external cooling water will be obliquely discharged to the surface of the silicon single crystal growth furnace body, so that the external cooling water flows through the surface of the silicon single crystal growth furnace body, which can take away the heat of the silicon single crystal growth furnace body surface, and then flows into the water storage circle, and the external cooling liquid in the water storage circle can be pumped out to the external storage container through the operation of the pump body. In the device, by allowing the coolant to flow on the surface of the silicon single crystal growth furnace body, the heat on the surface of the silicon single crystal growth furnace body can be taken away, and the internal water circulation cooling inside the silicon single crystal growth furnace body itself can achieve the best cooling effect on the silicon single crystal growth furnace body, thereby avoiding the problem that most of the existing large-scale set-type silicon single crystal growth furnaces only have an internal circulation water cooling structure, and the surface of the furnace body does not have a cooling structure, which makes the cooling efficiency of the furnace body low, and when the staff performs other related work outside the furnace body, it is easy to accidentally touch the surface of the furnace body and cause scalding accidents, which poses certain safety hazards. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is the overall structural diagram of the packaged large-size silicon single crystal growth furnace cooling device of the utility model;

[0017] Figure 2 It is a schematic diagram of the three-dimensional structure of the bottom of the ring tube in the utility model;

[0018] Figure 3 It is a three-dimensional exploded schematic diagram of the fixing block and the screws in the utility model;

[0019] Figure 4 It is a schematic diagram of the three-dimensional connection between the scraper ring and the pull block in the utility model;

[0020] Figure 5 It is a three-dimensional exploded schematic diagram of the water storage ring and the sealing cover in the utility model;

[0021] Figure 6 It is a cross-sectional view of the bottom connection between the ring pipe and the annular drain pipe in the utility model.

[0022] In the figure, 1. silicon single crystal growth furnace body; 2. cooling mechanism; 201. ring pipe; 202. water injection pipe; 203. ring drainage pipe; 3. sealing cover; 4. water storage ring; 5. bottom plate; 6. pump body; 7. scraper ring; 8. fixing block; 9. screw; 10. pull block; 11. drainage hole. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0024] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, in the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0025] See also Figure 1-6 The utility model provides a technical solution: a set-type large-size silicon single crystal growth furnace cooling device, comprising a silicon single crystal growth furnace body 1, a cooling mechanism 2 is arranged on the surface of the silicon single crystal growth furnace body 1, a bottom plate 5 is fixedly connected to the bottom of the silicon single crystal growth furnace body 1, and a water storage ring 4 is fixedly sleeved on the surface of the silicon single crystal growth furnace body 1;

[0026] The cooling mechanism 2 includes an annular pipe 201, an injection pipe 202 and an annular drainage pipe 203. The annular pipe 201 is movably mounted on the surface of the silicon single crystal growth furnace body 1. The bottom of the injection pipe 202 is fixedly connected to the top of the annular pipe 201, and the top of the annular drainage pipe 203 is fixedly connected to the bottom of the annular pipe 201.

[0027] In this embodiment: by fixing the annular tube 201 on the surface of the silicon single crystal growth furnace body 1, connecting the external cooling water source with the water injection pipe 202, and then controlling the pump body 6 to work, the external cooling water will be discharged through the annular drain pipe 203 inclined to one side of the silicon single crystal growth furnace body 1, and the external cooling water will be obliquely discharged to the surface of the silicon single crystal growth furnace body 1, so that the external cooling water flows through the surface of the silicon single crystal growth furnace body 1, which can take away the heat from the surface of the silicon single crystal growth furnace body 1, and then flows into the water storage ring 4, and the external cooling liquid in the water storage ring 4 can be pumped out to the external storage ring 4 through the operation of the pump body 6. In the container, by allowing the coolant to flow on the surface of the silicon single crystal growth furnace body 1, the heat on the surface of the silicon single crystal growth furnace body 1 can be taken away, and coupled with the internal water circulation cooling inside the silicon single crystal growth furnace body 1 itself, the best cooling effect on the silicon single crystal growth furnace body 1 can be achieved, thereby avoiding the problem that most of the existing large-scale set-type silicon single crystal growth furnaces only have an internal circulation water cooling structure, and the surface of the furnace body does not have a cooling structure, which makes the cooling efficiency of the furnace body low, and when the staff performs other related work outside the furnace body, it is easy to accidentally touch the surface of the furnace body and cause scalding accidents, which poses certain safety hazards.

[0028] As a technical optimization solution of the utility model, a fixing block 8 is fixedly connected to the top of the ring tube 201. The number of the fixing blocks 8 is several and evenly distributed on the top of the ring tube 201. A screw 9 is provided on the side of the fixing block 8 away from the silicon single crystal growth furnace body 1. The screw 9 passes through the fixing block 8 on the side close to the fixing block 8 and is connected to the internal thread of the silicon single crystal growth furnace body 1.

[0029] In this embodiment: by sleeve-mounting the ring tube 201 on the surface of the silicon single crystal growth furnace body 1, and then passing the screw 9 through the fixing block 8 and connecting it with the internal thread of the silicon single crystal growth furnace body 1, the ring tube 201 and the silicon single crystal growth furnace body 1 can be limited together, thereby achieving the effect of conveniently limiting the ring tube 201 and the silicon single crystal growth furnace body 1 together.

[0030] As a technical optimization solution of the present utility model, the left side of the water storage circle 4 is fixedly connected to a pump body 6 , and the bottom of the pump body 6 is fixedly connected to the top of the bottom plate 5 .

[0031] In this embodiment, by controlling the operation of the pump body 6 , the pump body 6 can pump out the external cooling water received in the water storage ring 4 , thereby achieving the effect of conveniently pumping out the external cooling water in the water storage ring 4 .

[0032] As a technical optimization solution of the utility model, a scraper ring 7 is provided on the surface of the silicon single crystal growth furnace body 1, and pull blocks 10 are fixedly connected to both sides of the top of the scraper ring 7, and the bottom of the scraper ring 7 contacts the bottom of the inner wall of the water storage ring 4.

[0033] In this embodiment: when dirt appears on the surface of the silicon single crystal growth furnace body 1 after being passed through cooling water for a long time, the pulling block 10 is held and pulled upward to drive the scraper ring 7 to move upward, and the scraper ring 7 is moved upward to scrape off the dirt on the surface of the silicon single crystal growth furnace body 1, thereby achieving the effect of conveniently scraping off the dirt on the surface of the silicon single crystal growth furnace body 1.

[0034] As a technical optimization solution of the utility model, a drainage hole 11 is opened inside the water storage ring 4 , and a sealing cover 3 is arranged on the front side of the water storage ring 4 , and the surface of the sealing cover 3 contacts the inner wall of the drainage hole 11 .

[0035] In this embodiment: after the scraped dirt is transferred into the water storage circle 4, the sealing cover 3 can be pulled to separate the sealing cover 3 from the drainage hole 11, so that the front side of the water storage circle 4 can be conveniently opened, and the dirt inside the water storage circle 4 can be conveniently cleaned out, thereby achieving the effect of conveniently opening the front side of the water storage circle 4.

[0036] As a technical optimization solution of the present utility model, the bottom of the annular drain pipe 203 is inclined toward a side close to the furnace body 1 of the silicon single crystal growth furnace.

[0037] In this embodiment: since the bottom of the annular drain pipe 203 is inclined toward the side close to the silicon single crystal growth furnace body 1, the annular drain pipe 203 can obliquely discharge the external cooling water to the surface of the silicon single crystal growth furnace body 1, thereby achieving the effect of conveniently discharging the external cooling water to the surface of the silicon single crystal growth furnace body 1.

[0038] As a technical optimization solution of the present utility model, the scraper ring 7 is made of high-toughness nylon plastic.

[0039] In this embodiment: since the scraper ring 7 is made of high-toughness nylon plastic, the scraper ring 7 can avoid scratching the surface of the silicon single crystal growth furnace body 1 when scraping dirt on the surface of the silicon single crystal growth furnace body 1, thereby achieving the effect of preventing the scraper ring 7 from scratching the surface of the silicon single crystal growth furnace body 1.

[0040] Working principle: First, the annular tube 201 is sleeved on the surface of the silicon single crystal growth furnace body 1, and then the screw 9 is passed through the fixing block 8 and connected with the internal thread of the silicon single crystal growth furnace body 1 to fix the annular tube 201, and then the external cooling water source is connected to the water injection pipe 202, and then the pump body 6 is controlled to work. At this time, the external cooling water will be injected into the annular tube 201 through the water injection pipe 202, and then discharged through the annular drain pipe 203. Since the bottom of the annular drain pipe 203 is inclined toward the side close to the silicon single crystal growth furnace body 1, the annular drain pipe 203 can obliquely discharge the external cooling water to the surface of the silicon single crystal growth furnace body 1, so that the external cooling water flows through the surface of the silicon single crystal growth furnace body 1, which can take away the heat from the surface of the silicon single crystal growth furnace body 1, and then flows into the water storage ring 4. The external coolant in the water storage ring 4 can be extracted to the external storage container through the operation of the pump body 6. When the surface of the silicon single crystal growth furnace body 1 is passed through the cooling water flow for a long time When dirt appears, hold the pulling block 10 and pull the pulling block 10 upward to drive the scraper ring 7 to move upward. Move the scraper ring 7 upward to scrape off the dirt on the surface of the silicon single crystal growth furnace body 1. After the scraped dirt is transferred into the water storage ring 4, pull the sealing cover 3 to separate the sealing cover 3 from the drainage hole 11, and conveniently clean out the dirt inside the water storage ring 4. By allowing the coolant to flow on the surface of the silicon single crystal growth furnace body 1, the heat on the surface of the silicon single crystal growth furnace body 1 can be taken away. In addition, the internal water circulation cooling of the silicon single crystal growth furnace body 1 itself can achieve the best cooling effect on the silicon single crystal growth furnace body 1, avoiding the problem that most of the existing large-size suited silicon single crystal growth furnaces only have an internal circulation water cooling structure, and the surface of the furnace body does not have a cooling structure, which makes the cooling efficiency of the furnace body low. In addition, when the staff performs other related work outside the furnace body, it is easy to accidentally touch the furnace body surface and cause scalding accidents, which poses certain safety hazards.

[0041] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A set-type cooling device for a large-size silicon single crystal growth furnace, comprising a silicon single crystal growth furnace body (1), characterized in that: The surface of the furnace body (1) of the silicon single crystal growth furnace is provided with a cooling mechanism (2), the bottom of the furnace body (1) of the silicon single crystal growth furnace is fixedly connected with a bottom plate (5), and the surface of the furnace body (1) of the silicon single crystal growth furnace is fixedly sleeved with a water storage ring (4); The cooling mechanism (2) comprises an annular pipe (201), a water injection pipe (202) and an annular drainage pipe (203); the annular pipe (201) is movably sleeved on the surface of a silicon single crystal growth furnace body (1); the bottom of the water injection pipe (202) is fixedly connected to the top of the annular pipe (201); and the top of the annular drainage pipe (203) is fixedly connected to the bottom of the annular pipe (201).

2. The cooling device for a large-size silicon single crystal growth furnace according to claim 1, characterized in that: The top of the ring tube (201) is fixedly connected with a fixing block (8); the fixing blocks (8) are in multiple numbers and are evenly distributed on the top of the ring tube (201); a screw (9) is provided on the side of the fixing block (8) away from the furnace body (1) of the silicon single crystal growth furnace; the screw (9) passes through the fixing block (8) on the side close to the fixing block (8) and is connected to the internal thread of the furnace body (1) of the silicon single crystal growth furnace.

3. The cooling device for a large-size silicon single crystal growth furnace according to claim 1, characterized in that: The left side of the water storage ring (4) is fixedly connected to a pump body (6), and the bottom of the pump body (6) is fixedly connected to the top of the bottom plate (5).

4. The package-type cooling device for a large-size silicon single crystal growth furnace according to claim 1, characterized in that: The surface of the silicon single crystal growth furnace body (1) is movably sleeved with a scraper ring (7), both sides of the top of the scraper ring (7) are fixedly connected with pull blocks (10), and the bottom of the scraper ring (7) is in contact with the bottom of the inner wall of the water storage ring (4).

5. The packaged cooling device for a large-size silicon single crystal growth furnace according to claim 1, characterized in that: A drainage hole (11) is provided inside the water storage ring (4), and a sealing cover (3) is provided on the front side of the water storage ring (4), wherein the surface of the sealing cover (3) contacts the inner wall of the drainage hole (11).

6. The packaged cooling device for a large-size silicon single crystal growth furnace according to claim 1, characterized in that: The bottom of the annular drainage pipe (203) is inclined toward a side close to the furnace body (1) of the silicon single crystal growth furnace.

7. The packaged cooling device for a large-size silicon single crystal growth furnace according to claim 4, characterized in that: The scraper ring (7) is made of high-toughness nylon plastic.

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