Vertical external cavity surface emitting laser and laser equipment
By introducing an angle adjustment mechanism into the vertical outer cavity surface emitting laser to adjust the optical path angle of the reflector, the problem of fixed light emission wavelength of the existing laser is solved, and flexible adjustment of wavelength and improved application flexibility is achieved.
Patent Information
- Application Number
- CN202421523658.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-01
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2034-07-01
AI Technical Summary
The light emission wavelength of the existing vertical outer cavity surface emitting laser is fixed, which is inconvenient to use.
A vertical outer cavity surface emitting laser is designed, and a structure including a light emitting structure, a first reflector, a second reflector, and an angle adjustment mechanism are adopted. The optical path angle of the first reflector and the second reflector is adjusted by the angle adjustment mechanism to adjust the light output wavelength of the laser.
The adjustment of the light output wavelength of the laser emitting surface of the vertical outer cavity is achieved, and the application flexibility of the laser is improved.
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Figure CN222673595U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of laser technology, and in particular to a vertical external cavity surface emitting laser and a laser device. Background Art
[0002] Vertical-External-Cavity Surface-Emitting Laser (VECSEL) combines the advantages of solid-state lasers and semiconductor lasers, and can achieve high output power and high beam quality at the same time.
[0003] At present, vertical external cavity surface emitting lasers generally include an active region composed of a semiconductor double heterojunction (DHS) or a multi-layer quantum well (MQW). One side of the laser cavity is composed of a Bragg reflector (DBR) attached to the active layer, and the other side is an external output coupling mirror. The back of the Bragg reflector is generally attached to a heat sink for heat dissipation. When the active region is irradiated by a pump laser, the active region is excited and emits light.
[0004] However, the emission wavelength of conventional vertical external cavity surface emitting lasers is generally fixed, making them inconvenient in application. Utility Model Content
[0005] The purpose of the present application is to provide a vertical external cavity surface emitting laser and a laser device to solve the problem that the emission wavelength of the vertical external cavity surface emitting laser in the prior art is fixed and inconvenient to use.
[0006] In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
[0007] On the one hand, an embodiment of the present application provides a vertical external cavity surface emitting laser, the vertical external cavity surface emitting laser comprising a light-emitting structure, a first reflector, a second reflector and an angle adjustment mechanism, the angle adjustment mechanism is connected to the first reflector and the second reflector respectively, the first reflector and the second reflector are symmetrically arranged, the light-emitting structure is located on a perpendicular midline between the first reflector and the second reflector, and the reflective surfaces of the first reflector and the second reflector face the light-emitting surface of the light-emitting structure;
[0008] The first reflector and the second reflector are used to reflect the light emitted by the light emitting structure back and forth;
[0009] The angle adjustment mechanism is used to adjust the optical path angles of the first reflector, the second reflector and the light emitting structure, so as to adjust the light emission wavelength of the vertical external cavity surface emitting laser.
[0010] Optionally, the angle adjustment mechanism includes a first connecting rod, a second connecting rod and an angle adjustment rod, the end of the first connecting rod is connected to the first reflector, and the first connecting rod is perpendicular to the first reflector, the end of the second connecting rod is connected to the second reflector, and the second connecting rod is perpendicular to the second reflector, and the intersection of the extension lines of the first connecting rod and the second connecting rod coincides with the origin of the light-emitting structure; the two ends of the angle adjustment rod are respectively slidably connected to the first connecting rod and the second connecting rod;
[0011] When the angle adjustment rod slides along the perpendicular midline of the first reflector and the second reflector, the light path angles of the first reflector, the second reflector and the light emitting structure change.
[0012] Optionally, both the first connecting rod and the second connecting rod are hollow connecting rods.
[0013] Optionally, the light-emitting structure includes a heat dissipation crystal, a semiconductor active layer, a coupling crystal and an evanescent layer, and the heat dissipation crystal, the semiconductor active layer, the evanescent layer and the coupling crystal are connected in sequence, and the refractive index of the semiconductor active layer is greater than the refractive index of the heat dissipation crystal and the evanescent layer, so that the surface where the semiconductor active layer is connected to the heat dissipation crystal and the coupling crystal constitutes a resonant cavity.
[0014] Optionally, the coupling crystal has a hemispherical structure, and the spherical surface of the coupling crystal is coated with a high-reflection film.
[0015] Optionally, the area of the semiconductor active layer is smaller than the area of the evanescent layer and the heat dissipation crystal.
[0016] Optionally, the coupling crystal is a ZnS crystal or a ZnSe crystal.
[0017] Optionally, the VECSEL further includes a heat dissipation structure, and the bottom of the light emitting structure is connected to the heat dissipation structure.
[0018] Optionally, the heat dissipation structure is provided with a light-transmitting hole, and the light-transmitting hole is arranged at the bottom of the light-emitting structure, and the light-transmitting hole is used to transmit a pump laser to excite the light-emitting structure to emit light.
[0019] On the other hand, an embodiment of the present application further provides a laser device, which includes the above-mentioned vertical external cavity surface emitting laser.
[0020] Compared with the prior art, this application has the following beneficial effects:
[0021] The present application provides a vertical external cavity surface emitting laser and laser equipment, the laser includes a light-emitting structure, a first reflector, a second reflector and an angle adjustment mechanism, the angle adjustment mechanism is connected to the first reflector and the second reflector respectively, the first reflector and the second reflector are symmetrically arranged, the light-emitting structure is located on the perpendicular midline of the first reflector and the second reflector, the reflection surfaces of the first reflector and the second reflector face the light-emitting surface of the light-emitting structure; the first reflector and the second reflector are used to reflect the light emitted by the light-emitting structure back and forth; the angle adjustment mechanism is used to adjust the optical path angle of the first reflector, the second reflector and the light-emitting structure to adjust the light-emitting wavelength of the vertical external cavity surface emitting laser. Since in the vertical external cavity surface emitting laser provided in the present application, the optical path angle of the first reflector and the second reflector can be adjusted by the angle adjustment mechanism, and then the angle of the light reflected into the light-emitting structure can be adjusted, so the effect of adjusting the light-emitting wavelength of the laser can be achieved.
[0022] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0024] Figure 1 It is a schematic diagram of the structure of a vertical external cavity surface emitting laser in the prior art.
[0025] Figure 2 A schematic diagram of the structure of a vertical external cavity surface emitting laser provided in an embodiment of the present application.
[0026] Figure 3 A schematic diagram of the structure of the angle adjustment mechanism provided in an embodiment of the present application.
[0027] Figure 4 A schematic diagram of the light path angles of the first reflector, the second reflector and the light-emitting structure provided in an embodiment of the present application.
[0028] Figure 5 A schematic diagram of the optical path of a vertical external cavity surface emitting laser provided in an embodiment of the present application.
[0029] In the picture:
[0030] 100-vertical external cavity surface emitting laser; 110-light emitting structure; 111-heat dissipation crystal; 112-semiconductor active layer; 113-evanescent layer; 114-coupling crystal; 120-first reflector; 130-second reflector; 140-angle adjustment mechanism; 141-first connecting rod; 142-second connecting rod; 143-angle adjustment rod; 150-heat dissipation structure; 151-light transmission hole. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0032] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
[0033] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.
[0034] It should be noted that, in this document, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.
[0035] In the description of the present application, it should be noted that the terms "upper", "lower", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0036] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.
[0037] As described in the background, the wavelength of light emitted by a vertical external cavity surface emitting laser in the prior art is generally fixed. Figure 1 , Figure 1 A schematic diagram of the structure of a vertical external cavity surface emitting laser in the prior art is shown. The laser includes a bottom DBR mirror 20, a multiple quantum well layer 30 and a top cover layer 40 formed in sequence on a substrate 10; an optical pump 50, which emits a pumping light beam to the surface of the top cover layer 40 for pumping; an external cavity reflector 60, which is separated from the rest of the VECSEL device and faces the bottom DBR mirror 20. The substrate 10 can be formed of a gallium arsenide (GaAs) type material. The bottom DBR mirror includes alternating AlGaAs layers and GaAs layers. The multiple quantum well layer 30 includes a plurality of quantum well layers (31 to 38 in the figure), which will not be described in detail here.
[0038] The emission wavelength of conventional vertical external cavity surface emitting lasers is generally fixed, making them inconvenient in application.
[0039] In view of this, in order to solve the above problems, an embodiment of the present application provides a vertical external cavity surface emitting laser, which can adjust the angle of the optical path formed by the first reflector and the second reflector by setting an angle adjustment mechanism, thereby achieving the purpose of adjusting the output wavelength of the vertical external cavity surface emitting laser.
[0040] The structure of the vertical external cavity surface emitting laser provided in the present application is exemplarily described below:
[0041] As an implementation, see Figure 2 The vertical external cavity surface emitting laser 100 includes a light emitting structure 110, a first reflector 120, a second reflector 130 and an angle adjustment mechanism 140. The angle adjustment mechanism 140 is connected to the first reflector 120 and the second reflector 130 respectively. The first reflector 120 and the second reflector 130 are symmetrically arranged. The light emitting structure 110 is located on the perpendicular midline of the first reflector 120 and the second reflector 130. The reflection surfaces of the first reflector 120 and the second reflector 130 face the light emitting surface of the light emitting structure 110. The first reflector 120 and the second reflector 130 are used to reflect the light emitted by the light emitting structure 110 back and forth; the angle adjustment mechanism is used to adjust the optical path angle of the first reflector 120, the second reflector 130 and the light emitting structure 110 to adjust the light emitting wavelength of the vertical external cavity surface emitting laser 100.
[0042] Through the vertical external cavity surface emitting laser 100 provided by the present application, on the one hand, the back and forth reflection of light can be realized by the first reflector 120 and the second reflector 130, and then a resonant cavity can be constructed outside the light emitting structure 110, so that there is no need to set a Bragg reflector inside the light emitting structure 110, and the light emitting structure 110 can be simpler, which is conducive to the miniaturization of the light emitting structure 110. On the other hand, since the angle adjustment mechanism 140 can adjust the optical path angle of the first reflector 120 and the second reflector 130, and the wavelength of the light emitted by the light emitting structure 110 is affected by the optical path of the first reflector 120 and the second reflector 130, the effect of adjusting the emission wavelength of the vertical external cavity surface emitting laser 100 is achieved.
[0043] As an alternative implementation, see Figure 3 The angle adjustment mechanism 140 includes a first connecting rod 141, a second connecting rod 142 and an angle adjustment rod 143. The end of the first connecting rod 141 is connected to the first reflector 120, and the first connecting rod 141 is perpendicular to the first reflector 120. The end of the second connecting rod 142 is connected to the second reflector 130, and the second connecting rod 142 is perpendicular to the second reflector 130. The intersection of the extension lines of the first connecting rod 141 and the second connecting rod 142 coincides with the origin of the light-emitting structure 110; the two ends of the angle adjustment rod 143 are respectively slidably connected to the first connecting rod 141 and the second connecting rod 142; when the angle adjustment rod 143 slides along the perpendicular bisector of the first reflector 120 and the second reflector 130, the optical path angle of the first reflector 120, the second reflector 130 and the light-emitting structure 110 changes.
[0044] As an example, a guide rail is provided on the perpendicular midline of the first reflector 120 and the second reflector 130, and the angle adjustment rod 143 can slide up and down along the guide rail. At the same time, the two ends of the angle adjustment rod 143 are slidably connected to the first connecting rod 141 and the second connecting rod 142, so that when the angle adjustment rod 143 slides along the guide rail, it can drive the first reflector 120 and the second reflector 130 to rotate, thereby realizing the adjustment of the optical path angle. And it should be noted that the optical path angle of the first reflector 120 and the second reflector 130 is always the same. Among them, when the light-emitting structure 110 is placed horizontally, the optical path angle refers to the angle between the first connecting rod 141, the second connecting rod 142 and the horizontal plane when the intersection of the extension lines of the first connecting rod 141 and the second connecting rod 142 coincides with the origin of the light-emitting structure 110. As Figure 3 In the figure, point O represents the intersection of the extension lines of the first connecting rod 141 and the second connecting rod 142. On this basis, Figure 4In the embodiment, the optical path angle between the first reflector 120 and the light emitting structure 110 is A, and the optical path angle between the second reflector 130 and the light emitting structure 110 is B, then A = B. Moreover, it can be understood that when the angle adjustment rod 143 slides upward along the guide rail, the angle A and the angle B increase simultaneously; and when the angle adjustment rod 143 slides downward along the guide rail, the angle A and the angle B decrease simultaneously.
[0045] The first connecting rod 141 and the second connecting rod 142 are both hollow connecting rods. By providing the hollow connecting rods, the light emitted by the light emitting structure 110 can be transmitted to the first reflector 120 and the second reflector 130 through the middle part of the connecting rods, and then reflected back by the first reflector 120 and the second reflector 130.
[0046] Furthermore, by setting a specific position relationship between the first reflector 120 and the second reflector 130 , the light beam can be reflected back and forth, and the first reflector 120 and the second reflector 130 can be used to realize the function of a resonant cavity.
[0047] For ease of understanding, the following is an actual example. For example, the light emitting structure 110 generates a light beam and transmits the light beam to the first reflector 120. Since the first connecting rod 141 and the first reflector 120 are vertically arranged, the light beam will be reflected back to the light emitting structure 110 along the original path. Since the reflected light beam is the light beam emitted by the light emitting structure 110, that is, the wavelength of the reflected light beam is the same as the wavelength of the light beam generated by the light emitting structure 110, the reflected light beam will resonate with the original light beam and be reflected again by the light emitting structure 110. Since the light-emitting structure 110 is located on the perpendicular bisector of the first reflector 120 and the second reflector 130, the light beam reflected by the light-emitting structure 110 will continue to propagate to the second reflector 130. Since the second connecting rod 142 and the second reflector 130 are also vertically arranged, the light beam will be reflected back to the light-emitting structure 110 along the original path and reflected again, and resonance will be generated in the light-emitting structure 110. Therefore, for each beam of light, it will be reflected back and forth between the first reflector 120, the light-emitting structure 110, and the second reflector 130 thousands of times, and resonance will be generated in the light-emitting structure 110 during each reflection process, thereby finally realizing that the laser can emit a high-quality and high-power light beam.
[0048] Furthermore, the optical path angle of the first reflector 120, the second reflector 130 and the light emitting structure 110 of the present application may refer to the angle between the path through which the light beam is reflected back and forth between the first reflector 120, the light emitting structure 110 and the second reflector 130 and the horizontal plane. By adjusting the optical path angle of the first reflector 120, the second reflector 130 and the light emitting structure 110 through the angle adjustment mechanism 140, the incident angle of the light beam reflected back to the light emitting mechanism can be changed, so as to achieve the purpose of adjusting the light emission wavelength of the vertical external cavity surface emitting laser 100.
[0049] As an optional implementation, the light emitting structure 110 includes a heat dissipation crystal, a semiconductor active layer 112, a coupling crystal 114 and an evanescent layer 113. The heat dissipation crystal 111, the semiconductor active layer 112, the evanescent layer 113 and the coupling crystal 114 are connected in sequence. The refractive index of the semiconductor active layer 112 is greater than the refractive index of the heat dissipation crystal 111 and the evanescent layer 113, so that the surface where the semiconductor active layer 112 is connected to the heat dissipation crystal and the coupling crystal 114 constitutes a sub-resonant cavity. In addition, the structure of the coupling crystal 114 is hemispherical, and the spherical surface of the coupling crystal 114 is coated with a high-reflection film. The area of the semiconductor active layer 112 is smaller than the area of the evanescent layer 113 and the heat dissipation crystal 111.
[0050] Among them, the coupling crystal 114 is composed of a material with a high refractive index and high thermal conductivity, for example, it can be realized by a hemispherical structure composed of ZnS or ZnSe crystals. A high-reflective film is evaporated on the curved spherical surface of the hemispherical crystal, and the evanescent layer 113 is evaporated on the plane of the hemispherical coupling crystal 114. The evanescent layer 113 is composed of a low refractive index material. The semiconductor active layer 112 is composed of a semiconductor heterojunction structure or a multi-quantum layer structure. After the semiconductor active layer 112 is peeled off on the growth substrate, it is directly atomically bonded to the evanescent layer 113 crystal. The other side of the semiconductor active layer 112 is covered with another heat dissipation crystal with a low refractive index and high thermal conductivity. For example, the heat dissipation crystal can be a sapphire crystal.
[0051] Since the refractive index of the semiconductor active layer 112 is greater than the refractive index of the heat dissipation crystal 111 and the evanescent layer 113, the upper and lower surfaces of the semiconductor active layer 112 constitute a sub-resonant cavity of the laser. That is, in the present application, the first reflector 120 and the second reflector 130 constitute a resonant cavity outside the light-emitting structure 110, and the upper and lower surfaces of the semiconductor active layer 112 constitute a sub-resonant cavity inside the light-emitting structure 110. One end of the sub-resonant cavity is formed by total reflection of the semiconductor material and the heat dissipation crystal, assuming that the internal angle satisfies the total reflection condition. The other end of the sub-resonant cavity is formed by frustrated total reflection between the semiconductor material and the evanescent layer 113, and the reflectivity and transmittance of this frustrated total reflection are jointly determined by the thickness of the evanescent layer 113 and the beam angle. This sub-resonant cavity can play a role in enhancing the semiconductor gain coefficient on the one hand, and can play a role in frequency selection on the other hand. The resonant frequency and wavelength of the sub-resonant cavity are determined by the tilt angle of the light beam in the semiconductor active layer 112, and further determined by the optical path angle of the first reflector 120, the second reflector 130 and the light emitting structure 110. Therefore, when the optical path angle of the first reflector 120 and the second reflector 130 is adjusted, the purpose of adjusting the light emission wavelength of the vertical external cavity surface emitting laser 100 can be achieved.
[0052] Therefore, please combine Figure 5 , the working principle of the vertical external cavity surface emitting laser 100 provided in the present application is:
[0053] When the light beam emitted by the light emitting structure 110 is reflected back and forth by the first reflector 120 and the second reflector 130, the light beam resonates simultaneously in the sub-resonant cavity formed by the upper and lower surfaces of the semiconductor active layer 112, and finally the vertical external cavity surface emitting laser 100 can emit a high-power light beam. In addition, when it is necessary to adjust the light emission wavelength of the vertical external cavity surface emitting laser, it is only necessary to adjust the angle of the first reflector 120 and the second reflector 130 through the angle adjustment mechanism.
[0054] In addition, the VECSEL 100 further includes a heat dissipation structure 150 , and the bottom of the light emitting structure 110 is connected to the heat dissipation structure 150 .
[0055] In one implementation, the heat dissipation structure 150 is provided with a light-transmitting hole 151, which is provided at the bottom of the light-emitting structure 110, and the light-transmitting hole 151 is used to transmit the pump laser to excite the light-emitting structure 110 to emit light. For example, the heat dissipation structure 150 can adopt a heat dissipation copper block. As another implementation, the heat dissipation structure 150 can also adopt a transparent heat dissipation structure 150, in which case the wavelengths of the pump laser and the light emitted by the light-emitting structure 110 are different, and therefore will not affect the operation of the vertical external cavity surface emitting laser 100.
[0056] Based on the above implementation, an embodiment of the present application further provides a laser device, which includes the above vertical external cavity surface emitting laser 100.
[0057] In summary, the present application provides a vertical external cavity surface emitting laser and laser equipment, the laser includes a light-emitting structure, a first reflector, a second reflector and an angle adjustment mechanism, the angle adjustment mechanism is connected to the first reflector and the second reflector respectively, the first reflector and the second reflector are symmetrically arranged, the light-emitting structure is located on the perpendicular midline of the first reflector and the second reflector, and the reflecting surfaces of the first reflector and the second reflector face the light-emitting surface of the light-emitting structure; the first reflector and the second reflector are used to reflect the light emitted by the light-emitting structure back and forth; the angle adjustment mechanism is used to adjust the optical path angle of the first reflector, the second reflector and the light-emitting structure to adjust the light-emitting wavelength of the vertical external cavity surface emitting laser. Since in the vertical external cavity surface emitting laser set in the present application, the optical path angle of the first reflector and the second reflector can be adjusted by the angle adjustment mechanism, and then the angle of the light reflected into the light-emitting structure can be adjusted, so the effect of adjusting the light-emitting wavelength of the laser can be achieved.
[0058] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
[0059] It will be apparent to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.
Claims
1. A vertical external cavity surface emitting laser, characterized in that: The vertical external cavity surface emitting laser comprises a light emitting structure, a first reflector, a second reflector and an angle adjustment mechanism, wherein the angle adjustment mechanism is connected to the first reflector and the second reflector respectively, the first reflector and the second reflector are symmetrically arranged, the light emitting structure is located on the perpendicular midline of the first reflector and the second reflector, and the reflection surfaces of the first reflector and the second reflector face the light emitting surface of the light emitting structure; The first reflector and the second reflector are used to reflect the light emitted by the light emitting structure back and forth; The angle adjustment mechanism is used to adjust the optical path angles of the first reflector, the second reflector and the light emitting structure, so as to adjust the light emission wavelength of the vertical external cavity surface emitting laser.
2. The vertical external cavity surface emitting laser according to claim 1, characterized in that: The angle adjustment mechanism comprises a first connecting rod, a second connecting rod and an angle adjustment rod, the end of the first connecting rod is connected to the first reflector, and the first connecting rod is perpendicular to the first reflector, the end of the second connecting rod is connected to the second reflector, and the second connecting rod is perpendicular to the second reflector, and the intersection of the extension lines of the first connecting rod and the second connecting rod coincides with the origin of the light-emitting structure; the two ends of the angle adjustment rod are slidably connected to the first connecting rod and the second connecting rod respectively; When the angle adjustment rod slides along the perpendicular midline of the first reflector and the second reflector, the light path angles of the first reflector, the second reflector and the light emitting structure change.
3. The vertical external cavity surface emitting laser according to claim 2, characterized in that: The first connecting rod and the second connecting rod are both hollow connecting rods.
4. The vertical external cavity surface emitting laser according to claim 1, characterized in that: The light-emitting structure includes a heat dissipation crystal, a semiconductor active layer, a coupling crystal and an evanescent layer. The heat dissipation crystal, the semiconductor active layer, the evanescent layer and the coupling crystal are connected in sequence. The refractive index of the semiconductor active layer is greater than the refractive indexes of the heat dissipation crystal and the evanescent layer, so that the surface where the semiconductor active layer is connected to the heat dissipation crystal and the coupling crystal constitutes a resonant cavity.
5. The vertical external cavity surface emitting laser according to claim 4, characterized in that: The coupling crystal has a hemispherical structure, and a spherical surface of the coupling crystal is coated with a high-reflection film.
6. The vertical external cavity surface emitting laser according to claim 4, characterized in that: The area of the semiconductor active layer is smaller than the area of the evanescent layer and the heat dissipation crystal.
7. The vertical external cavity surface emitting laser according to claim 4, characterized in that: The coupling crystal is a ZnS crystal or a ZnSe crystal.
8. The vertical external cavity surface emitting laser according to claim 1, characterized in that: The vertical external cavity surface emitting laser also includes a heat dissipation structure, and the bottom of the light emitting structure is connected to the heat dissipation structure.
9. The vertical external cavity surface emitting laser according to claim 8, characterized in that: The heat dissipation structure is provided with a light-transmitting hole, and the light-transmitting hole is arranged at the bottom of the light-emitting structure. The light-transmitting hole is used to transmit pump laser to excite the light-emitting structure to emit light.
10. A laser device, characterized in that: The laser device comprises the vertical external cavity surface emitting laser according to any one of claims 1 to 9.