Deep ultraviolet LED device with special N-type electrode structure

Abstract

The utility model provides a deep ultraviolet LED device with a special N-type electrode structure, which comprises an MESA mesa layer provided with a concave part, the concave part comprises a plurality of grooves arranged in an array along a first direction, the bottom surface of each groove is correspondingly provided with an N-type contact sub-electrode, a plurality of N-type contact sub-electrodes form an N-type electrode area, and the N-type electrode area is provided with a plurality of N-type contact sub-electrodes. The orthographic projection of each N-type contact sub-electrode on the MESA mesa layer is in a dumbbell-like shape, the deep ultraviolet LED device further comprises a P-type contact electrode located on the top surface of the MESA mesa layer, and the P-type contact electrode is located outside an N-type electrode area; specifically, one dumbbell-like N-type contact sub-electrode is formed in each groove of the concave part, so that current expansion channels of the deep ultraviolet LED device in the range of each groove are increased, the current congestion effect is relieved, and the light extraction efficiency of the deep ultraviolet LED device with the special N-type electrode structure is further improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor optoelectronics, in particular to a deep ultraviolet LED device with a special N-type electrode structure. Background Art

[0002] In ultraviolet light, light with a wavelength of 200 nanometers to 350 nanometers is called deep ultraviolet light. AlGaN-based ultraviolet light emitting diode (LED) devices have received continuous attention due to their wide application prospects in air purification, sterilization, ultraviolet light therapy, biochemical detection, confidential communications and other fields. However, existing ultraviolet LED devices have the following problems: First, the existing ultraviolet LED devices have low light extraction efficiency, high voltage, and low photoelectric conversion efficiency; second, the existing ultraviolet LED devices will cause local current congestion due to incompatible electrode structures and electrode layout designs. On the one hand, local overheating will cause metal electromigration, material aging, etc., accelerate device degradation and cause chip failure. On the other hand, it will cause uneven light emission of ultraviolet LED devices and a decrease in light output power.

[0003] Therefore, there is an urgent need for a deep ultraviolet LED device with a special N-type electrode structure to solve the above technical problems. Utility Model Content

[0004] The utility model aims to provide a deep ultraviolet LED device with a special N-type electrode structure, which is used to improve the technical problem of low light extraction power caused by local current congestion in the deep ultraviolet light-emitting diodes of the prior art.

[0005] In order to solve the above technical problems, the utility model provides a deep ultraviolet LED device with a special N-type electrode structure, including a MESA table layer with a concave portion, the concave portion includes a plurality of grooves arranged in an array along a first direction, an N-type contact sub-electrode is correspondingly arranged on the bottom surface of the groove, and the plurality of N-type contact sub-electrodes form an N-type electrode region;

[0006] Among them, the orthographic projection shape of each N-type contact sub-electrode on the MESA mesa layer is dumbbell-shaped, and the deep ultraviolet LED device also includes a P-type contact electrode located on the top surface of the MESA mesa layer, and the P-type contact electrode is located outside the N-type electrode area.

[0007] Preferably, the distance between two adjacent N-type contact sub-electrodes is less than or equal to the current extension length of the deep ultraviolet LED device.

[0008] Preferably, the N-type contact sub-electrode comprises a main body and arc convex parts located at both ends of the main body, and the arc convex parts are integrally formed with the main body;

[0009] The maximum length of the arc protrusion along the first direction is greater than the length of the main body along the first direction.

[0010] Preferably, the center distances between two adjacent grooves are equal.

[0011] Preferably, the edge line width spacing between the N-type contact sub-electrode and the MESA mesa layer is 3-10 um.

[0012] Preferably, the edge line width spacing between the P-type contact electrode and the MESA mesa layer is 3-15 um.

[0013] Preferably, the deep ultraviolet LED device further comprises an N-type thickened electrode disposed on the N-type contact sub-electrode, and a P-type thickened electrode disposed on the P-type contact electrode;

[0014] The edge line width spacing between the N-type thickened electrode and the N-type contact sub-electrode is 2-15 μm, and the edge line width spacing between the P-type thickened electrode and the P-type contact electrode is 2-15 μm.

[0015] Preferably, the deep ultraviolet LED device further comprises a passivation layer respectively arranged on the N-type thickened electrode and the P-type thickened electrode;

[0016] Preferably, the deep ultraviolet LED device further comprises a passivation layer respectively arranged on the N-type thickened electrode and the P-type thickened electrode;

[0017] The passivation layer has a first passivation opening and a second passivation opening on the P-type thickened electrode, the second passivation opening is arranged between two adjacent grooves, and the passivation layer has a third passivation opening on the N-type thickened electrode.

[0018] Preferably, the deep ultraviolet LED device also includes an N-type pad electrode and a P-type pad electrode, the P-type pad electrode is electrically connected to the P-type contact electrode through the first passivation opening and / or the second passivation opening, and the N-type pad electrode is electrically connected to the N-type contact electrode through the third passivation opening.

[0019] Preferably, the distance between the N-type pad electrode and the P-type pad electrode is 50-200 um.

[0020] The beneficial effects of the utility model are as follows: different from the prior art, the utility model provides a deep ultraviolet LED device with a special N-type electrode structure, including a MESA table layer with a recess, the recess including a plurality of recesses arranged in an array along a first direction, an N-type contact sub-electrode corresponding to the bottom surface of the recess, and the plurality of N-type contact sub-electrodes forming an N-type electrode region, wherein the orthographic projection shape of each N-type contact sub-electrode on the MESA table layer is a dumbbell-shaped shape, and the deep ultraviolet LED device also includes a P-type contact electrode located on the top surface of the MESA table layer, and the P-type contact electrode is located outside the N-type electrode region; specifically, the utility model forms a dumbbell-shaped N-type contact sub-electrode in each recess of the recess, compared with the design of a traditional deep ultraviolet LED device using a whole piece of N-type contact electrode, the current expansion channel of the deep ultraviolet LED device within each recess is increased, and at the same time, the two ends of the dumbbell-shaped N-type contact sub-electrode are arc-shaped, which is more conducive to alleviating the current congestion effect and increasing the side wall length of the MESA table layer, further improving the light extraction efficiency of the deep ultraviolet LED device with a special N-type electrode structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a cross-sectional view of a deep ultraviolet LED device with a special N-type electrode structure provided by an embodiment of the utility model along a second direction;

[0022] Figure 2 It is a top view schematic diagram of part of the film layers in the deep ultraviolet LED device with a special N-type electrode structure provided by an embodiment of the utility model;

[0023] In the figure: 10-substrate; 200-slicing road; 201-groove; 20-MESA table layer; 21-intrinsic layer; 22-electron injection layer; 23-quantum well active layer; 24-electron blocking layer; 25-hole injection layer; 30-N-type contact electrode; 40-P-type contact electrode; 50-N-type thickened electrode; 60-P-type thickened electrode; 70-passivation layer; 71-first passivation opening; 72-second passivation opening; 73-third passivation opening; 80-N-type pad electrode; 90-P-type pad electrode. DETAILED DESCRIPTION

[0024] The following will be combined with the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0025] The technical solution of the present application is now described in conjunction with specific embodiments.

[0026] See also Figure 1 to Figure 2 , Figure 1 is a cross-sectional view of a deep ultraviolet LED device with a special N-type electrode structure provided by an embodiment of the utility model along a second direction D2; Figure 2 It is a schematic top view of part of the film layers in a deep ultraviolet LED device with a special N-type electrode structure provided by an embodiment of the utility model.

[0027] Specifically, the deep ultraviolet LED device with a special N-type electrode structure includes a plurality of epitaxial structures, each of which includes a substrate 10 stacked in sequence along a growth direction and a MESA mesa layer 20 located on the substrate 10, and the MESA mesa layer 20 is provided with a concave portion, which does not completely penetrate the MESA mesa layer 20;

[0028] Among them, the deep ultraviolet LED device with a special N-type electrode structure also includes an N-type contact electrode 30 and a P-type contact electrode 40. The N-type contact electrode 30 includes a plurality of N-type contact sub-electrodes arranged at intervals from each other, and the plurality of N-type contact sub-electrodes form an N-type electrode region. The P-type contact electrode 40 is arranged on the top surface of the MESA mesa layer 20 and is located outside the N-type electrode region.

[0029] Specifically, the concave portion includes a plurality of grooves 201 arranged in an array along the first direction D1, and an N-type contact sub-electrode is correspondingly provided on the bottom surface of the groove, and the plurality of N-type contact sub-electrodes form an N-type electrode area, wherein the orthographic projection shape of each N-type contact sub-electrode on the MESA table layer 20 is a dumbbell-like shape (a combined figure formed by a rectangle and two circles greater than one half).

[0030] In the present invention, the substrate 10 is made of sapphire material; sapphire material has many advantages: first, the production technology of sapphire material is mature and the device quality is good; second, sapphire has good stability and can be used in high-temperature growth processes; finally, sapphire has high mechanical strength and is easy to handle and clean. Therefore, most processes generally use sapphire as the substrate 10.

[0031] In the present invention, the MESA mesa layer 20 includes an intrinsic layer 21, an electron injection layer 22, a quantum well active layer 23, an electron blocking layer 24 and a hole injection layer 25 stacked along the growth direction; wherein the MESA mesa layer 20 is provided with a recess, which does not completely penetrate the MESA mesa layer 20.

[0032] Specifically, the electron injection layer 22 includes a concave portion that penetrates a portion of the electron injection layer 22 ; the MESA mesa layer 20 forms a convex platform between two adjacent concave portions, and a quantum well active layer 23 , an electron blocking layer 24 and a hole injection layer 25 are sequentially formed on the convex platform.

[0033] In an embodiment of the utility model, the intrinsic layer 21 includes a low-temperature buffer layer arranged on the substrate 10 and an aluminum nitride layer arranged on the low-temperature buffer layer; wherein the material of the low-temperature buffer layer is aluminum nitride, and its growth temperature ranges between 400 degrees Celsius and 800 degrees Celsius, and its thickness ranges between 10nm and 50nm; the growth temperature range of the aluminum nitride layer is between 1200 degrees Celsius and 1400 degrees Celsius, and its thickness ranges between 500nm and 4000nm.

[0034] In the embodiment of the present invention, the material of the electron injection layer 22 is a silicon-doped aluminum gallium nitride material, and the dopant is SiH 4 ; Among them, the composition range of aluminum element in the electron injection layer 22 is between 20% and 90%, the thickness range of the electron injection layer 22 is between 500nm and 4000nm, and the growth temperature range of the electron injection layer 22 is between 800 degrees Celsius and 1200 degrees Celsius.

[0035] In the embodiment of the utility model, the quantum well active layer 23 is disposed on the boss of the electron injection layer 22, and the growth temperature range of the quantum well active layer 23 is between 900 degrees Celsius and 1200 degrees Celsius.

[0036] Specifically, the quantum well active layer 23 includes at least one potential well layer and at least two potential barrier layers that are alternately arranged, and each potential well layer is inserted between two adjacent potential barrier layers; wherein the potential well layer and the potential barrier layer both include AlGaN material, and the total aluminum component content of each potential well layer is lower than the total aluminum component content of each barrier layer, so as to ensure that the carriers in the quantum well active layer 234 are confined in the potential well layer.

[0037] Furthermore, the material of the potential well layer is Al x1 Ga y1 N, the thickness of the potential well layer is 0.1nm~5nm, where 30%<x1<80%, and x1+y1=1; the material of the barrier layer is Al x2 Ga y2 N, the thickness of the barrier layer is 1nm~30nm, where 40%<x2<90%, and x2+y2=1.

[0038] Furthermore, the number of periods of the quantum well active layer 23 is greater than or equal to 1 and less than or equal to 20, and the number of periods is a positive integer.

[0039] In an embodiment of the utility model, the electron blocking layer 24 is a single-layer AlGaN structure, and the electron blocking layer 24 is a Mg-doped semiconductor material, which uses bismuth magnesium as a dopant; wherein the aluminum component content in the electron blocking layer 24 is greater than or equal to 50% and less than 100%, and the thickness of the electron blocking layer 24 ranges from 0.1nm to 200nm.

[0040] In an embodiment of the utility model, the hole injection layer 25 is arranged on the electron blocking layer 24, and the growth temperature range of the hole injection layer 25 is between 600 degrees Celsius and 1100 degrees Celsius; wherein, the material of the hole injection layer 25 is Mg-doped AlGaN material, the aluminum component content in the hole injection layer 25 is greater than or equal to 20% and less than or equal to 60%, and the thickness range of the hole injection layer 25 is between 1nm and 50nm.

[0041] Specifically, the hole injection layer 25 uses bis(cyclopentadienyl)magnesium as a dopant, and the doping concentration of the hole injection layer 256 is in the range of 1E18 cm -3 ~5E20cm -3 .

[0042] See also Figure 1 as well as Figure 2 It can be seen that after the MESA mesa layer 20 is etched to complete the light-emitting structure, the edge of the MESA mesa layer 20 is further etched to the substrate 10 to form a scribe line 200, so as to form a plurality of epitaxial structures of the deep ultraviolet LED; Figure 2 It can be seen that the bottom surfaces of the multiple epitaxial structures of the deep ultraviolet LED are square.

[0043] In the embodiment of the utility model, each epitaxial structure surface further includes a contact electrode assembly, which includes a P-type contact electrode 40 disposed on the hole injection layer 25 (on the boss) and an N-type contact electrode 30 disposed at the bottom surface of the concave portion of the electron injection layer 22;

[0044] Among them, the N-type contact electrode 30 includes a plurality of N-type contact sub-electrodes arranged at intervals from each other, each N-type contact sub-electrode is arranged on the bottom surface of a groove, and the orthographic projection shape of each N-type contact sub-electrode on the MESA mesa layer 20 is a dumbbell-shaped; a plurality of N-type contact sub-electrodes form an N-type electrode area, and the P-type contact electrode 40 is arranged on the top surface of the MESA mesa layer 20 and is located outside the N-type electrode area.

[0045] Specifically, the material of the P-type contact electrode 40 includes but is not limited to at least one of Ni, Au, ITO, Rh, Al, Ti, Au, Pt and Pd, with a thickness of 10~70nm; the material of the N-type contact electrode 30 includes but is not limited to at least one of Cr, Al, Ti, Au, Ni, Pt, Rh, Pd and a high-conductivity N-type semiconductor material, with a thickness of 100~200nm.

[0046] Preferably, the edge line width spacing between the P-type contact electrode and the MESA mesa layer is 3-15 um.

[0047] Furthermore, the spacing between two adjacent N-type contact sub-electrodes is less than or equal to the current extension length of the deep ultraviolet LED device, which is conducive to current extension; wherein, according to the current extension model and current distribution theory established by X. Guo and E.F. Schubert, the current extension length formula of the deep ultraviolet LED device with a special N-type electrode structure is as follows:

[0048] L S = ; (1)

[0049] Among them, Ls is the current extension length of the deep ultraviolet LED device with a special N-type electrode structure, c is the specific contact resistivity of the P-type semiconductor material, p is the resistivity of the P-type semiconductor material, T P is the thickness of the P-type contact electrode 40; T n is the thickness of the N-type contact electrode 30, n is the resistivity of N-type semiconductor material.

[0050] Specifically, according to formula (1), p , P c , T P , T n as well as n Under certain circumstances, the Ls value can be obtained, so that the distance between the N-type contact electrode 30 and the P-type contact electrode 40 can be reasonably designed according to the size of the Ls value, so that the current and heat distribution of the deep ultraviolet LED device with a special N-type electrode structure prepared can be uniform, thereby improving the photoelectric conversion efficiency.

[0051] See also Figure 1 to Figure 2 The concave portion on the electron injection layer 22 includes a plurality of grooves 201 arranged in an array along the first direction D1, and the bottom surface of the groove 201 is in a dumbbell shape.

[0052] In one embodiment, the center distances between two adjacent grooves 201 are equal.

[0053] In this embodiment, an N-type contact sub-electrode is disposed in one groove 201 corresponding to the N-type contact electrode 30 , and the bottom surface of the N-type contact sub-electrode corresponding to the groove 201 is in a dumbbell-like shape.

[0054] Furthermore, the N-type contact sub-electrode includes a main body and arc-shaped protrusions located at two ends of the main body, and the arc-shaped protrusions are integrally formed with the main body;

[0055] The maximum length of the arc protrusion along the first direction is greater than the length of the main body along the first direction.

[0056] Preferably, the edge line width spacing between the N-type contact sub-electrode and the MESA mesa layer 20 is 3-10 um.

[0057] In the embodiment of the utility model, the deep ultraviolet LED device further includes an N-type thickened electrode 50 disposed on the N-type contact sub-electrode, and a P-type thickened electrode 60 disposed on the P-type contact electrode 40 .

[0058] Specifically, the material of the N-type thickened electrode 50 and the P-type thickened electrode 60 is at least one of Cr, Pt, Pd, Al, Ti, Rh, Ni, Ag and Au; the N-type thickened electrode 50 and the P-type thickened electrode 60 can play the role of electrode thickening and current expansion, and on the other hand, they can also play the role of reflective electrodes to reflect light to the sapphire surface as much as possible. Usually, the first few layers of the N-type thickened electrode 50 and the P-type thickened electrode 60 are high reflectivity materials, such as Al and Rh in the ultraviolet band.

[0059] Furthermore, the edge line width interval between the N-type thickened electrode 50 and the N-type contact sub-electrode is 2-15 μm, and the edge line width interval between the P-type thickened electrode 60 and the P-type contact electrode 40 is 2-15 μm.

[0060] In this embodiment, the edge line width of the N-type thickened electrode 50 may be greater than or less than the edge line width of the N-type contact electrode; the edge line width of the P-type thickened electrode 60 may be greater than or less than the edge line width of the P-type contact electrode 40;

[0061] In this embodiment, the deep ultraviolet LED device also includes a passivation layer 70 respectively arranged on the N-type thickened electrode 50 and the P-type thickened electrode 60; the material of the passivation layer 70 includes but is not limited to silicon oxide, silicon nitride, silicon nitride oxide, hafnium oxide, titanium oxide, magnesium fluoride, etc.

[0062] The passivation layer 70 has a first passivation opening 71 and a second passivation opening 72 on the P-type thickened electrode. The second passivation opening 72 is disposed between two adjacent grooves 201 . The length of the second passivation opening 72 along the second direction D2 is smaller than the length of the first passivation opening 71 along the second direction D2.

[0063] Furthermore, the passivation layer 70 is further provided with a third passivation opening 73 on the N-type thickened electrode 50 .

[0064] In this embodiment, the deep ultraviolet LED device also includes an N-type pad electrode 80 and a P-type pad electrode 90. The P-type pad electrode 90 is electrically connected to the P-type contact electrode 40 through the first passivation opening 71 and / or the second passivation opening 72, and the N-type pad electrode 80 is electrically connected to the N-type contact electrode 30 through the third passivation opening 73.

[0065] Preferably, the distance between the N-type pad electrode 80 and the P-type pad electrode 90 is 50-200 um.

[0066] Preferably, the N-type pad electrode 80 and the P-type pad electrode 90 both include at least one of Cr, Al, Ti, Au, Pt, Rh, Pd, Mg, Ag, Cu and Sn, and the total thickness is greater than 1.5 um.

[0067] In one embodiment, the orthographic projection area of ​​the N-type pad electrode 80 on the substrate may be different from the orthographic projection area of ​​the P-type pad electrode 90 on the substrate.

[0068] Compared with the prior art, the utility model designs an N-type contact electrode pattern layout that combines independent circles and long strips, which divides the electrode material of the traditional N-type semiconductor into independent individuals, increases the current expansion channel, and at the same time, the two ends of the arc are more conducive to alleviating the current congestion effect, and increasing the length of the MESA side wall, increasing the light extraction efficiency, and the current expansion length can be calculated through the current expansion model and current distribution theory established by X. Guo and EFSchubert. Through this current expansion length, the spacing between the N-type contact electrode 30 and the P-type contact electrode 40 can be reasonably designed, so that the current and heat distribution of the deep ultraviolet LED device with a special N-type electrode structure prepared by it is uniform, thereby alleviating the current congestion effect, and achieving uniform current and heat distribution, high photoelectric conversion efficiency, and long life.

[0069] Specifically, the utility model etches the concave portion of the MESA mesa layer 20 into a plurality of grooves 201, and a dumbbell-shaped N-type contact sub-electrode is deposited in each groove 201. Compared with the traditional deep ultraviolet LED device that uses a whole surface of the N-type contact electrode structure in each groove 201, the plurality of dumbbell-shaped N-type contact sub-electrodes can increase the current expansion channel of the deep ultraviolet LED device. At the same time, the two ends of the arc are more conducive to alleviating the current congestion effect and increasing the length of the MESA side wall, thereby improving the light extraction efficiency of the deep ultraviolet LED device with a special N-type electrode structure.

[0070] In summary, different from the prior art, the present invention provides a deep ultraviolet LED device with a special N-type electrode structure, including a MESA table layer 20 with a concave portion, the concave portion including a plurality of grooves 201 arranged in an array along a first direction D1, an N-type contact sub-electrode is correspondingly arranged on the bottom surface of the groove 201, and the plurality of N-type contact sub-electrodes form an N-type electrode region, wherein the orthographic projection shape of each N-type contact sub-electrode on the MESA table layer 20 is a dumbbell-like shape, and the deep ultraviolet LED device further includes a P-type contact electrode 40 located on the top surface of the MESA table layer, and the P The type contact electrode 40 is located outside the N-type electrode area; specifically, the utility model forms a dumbbell-shaped N-type contact sub-electrode in each groove 201 of the concave portion. Compared with the traditional deep ultraviolet LED device using a whole piece of N-type contact electrode design, the current expansion channel of the deep ultraviolet LED device within the range of each groove is increased. At the same time, the two ends of the dumbbell-shaped N-type contact sub-electrode are arc-shaped, which is more conducive to alleviating the current congestion effect and increasing the side wall length of the MESA table layer 20, further improving the light extraction efficiency of the deep ultraviolet LED device with a special N-type electrode structure.

[0071] It should be noted that the above embodiments all belong to the same utility model concept, and the description of each embodiment has its own focus. For matters that are not described in detail in some embodiments, reference can be made to the description in other embodiments.

[0072] The above embodiments only express the implementation methods of the utility model, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, and these all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A deep ultraviolet LED device with a special N-type electrode structure, characterized in that: A MESA mesa layer having a concave portion, wherein the concave portion comprises a plurality of grooves arranged in an array along a first direction, an N-type contact sub-electrode is correspondingly arranged on the bottom surface of the groove, and the plurality of N-type contact sub-electrodes form an N-type electrode region; Among them, the orthographic projection shape of each of the N-type contact sub-electrodes on the MESA mesa layer is a dumbbell-shaped shape, and the deep ultraviolet LED device also includes a P-type contact electrode located on the top surface of the MESA mesa layer, and the P-type contact electrode is located outside the N-type electrode area.

2. The deep ultraviolet LED device with a special N-type electrode structure according to claim 1, characterized in that: The distance between two adjacent N-type contact sub-electrodes is less than or equal to the current extension length of the deep ultraviolet LED device.

3. The deep ultraviolet LED device with a special N-type electrode structure according to claim 1, characterized in that: The N-type contact sub-electrode comprises a main body and arc convex parts located at two ends of the main body, and the arc convex parts are integrally formed with the main body; Wherein, the maximum length of the arc protrusion along the first direction is greater than the length of the main body along the first direction.

4. The deep ultraviolet LED device with a special N-type electrode structure according to claim 1, characterized in that: The center distances between two adjacent grooves are equal.

5. The deep ultraviolet LED device with a special N-type electrode structure according to claim 1, characterized in that: The edge line width spacing between the N-type contact sub-electrode and the MESA mesa layer is 3-10 um.

6. The deep ultraviolet LED device with a special N-type electrode structure according to claim 1, characterized in that: The edge line width spacing between the P-type contact electrode and the MESA mesa layer is 3-15 um.

7. The deep ultraviolet LED device with a special N-type electrode structure according to claim 3, characterized in that: The deep ultraviolet LED device further includes an N-type thickened electrode disposed on the N-type contact sub-electrode, and a P-type thickened electrode disposed on the P-type contact electrode; The edge line width spacing between the N-type thickened electrode and the N-type contact sub-electrode is 2-15 μm, and the edge line width spacing between the P-type thickened electrode and the P-type contact electrode is 2-15 μm.

8. The deep ultraviolet LED device with a special N-type electrode structure according to claim 7, characterized in that: The deep ultraviolet LED device further includes a passivation layer respectively arranged on the N-type thickened electrode and the P-type thickened electrode; The passivation layer has a first passivation opening and a second passivation opening on the P-type thickened electrode, the second passivation opening is arranged between two adjacent grooves, and the passivation layer has a third passivation opening on the N-type thickened electrode.

9. The deep ultraviolet LED device with a special N-type electrode structure according to claim 8, characterized in that: The deep ultraviolet LED device further comprises an N-type contact electrode, an N-type pad electrode and a P-type pad electrode, wherein the N-type contact electrode comprises a plurality of N-type contact sub-electrodes spaced apart from each other; The P-type pad electrode is electrically connected to the P-type contact electrode through the first passivation opening and / or the second passivation opening, and the N-type pad electrode is electrically connected to the N-type contact electrode through the third passivation opening.

10. The deep ultraviolet LED device with a special N-type electrode structure according to claim 9, characterized in that: The distance between the N-type pad electrode and the P-type pad electrode is 50-200 um.

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