A seed crystal device for preparing GaO diodes

Abstract

The utility model provides a seed crystal device for preparing GaO diodes, belonging to the technical field of GaO diode preparation. The seed crystal device for preparing GaO diodes comprises a seed crystal growth chamber, a seed crystal support, a seed crystal growth source and a gas supply mechanism. The seed crystal growth chamber is a cylindrical container, the seed crystal support is arranged inside the seed crystal growth chamber, and the seed crystal is placed on the top of the seed crystal support; the seed crystal growth source and the gas supply mechanism are both arranged inside the seed crystal growth chamber, and are used to provide raw materials required for GaO seed crystal growth, and the gas supply mechanism is used to provide the gas required for growth to the inside of the seed crystal growth chamber; the utility model provides a seed crystal device for preparing GaO diodes, which can solve the problem that the existing seed crystal device cannot ensure the uniform growth of seed crystals, resulting in poor stability in the preparation of GaO diodes.

Description

Technical Field

[0001] The utility model belongs to the technical field of GaO diode preparation, and in particular relates to a seed crystal device used for preparing GaO diodes. Background Art

[0002] Gallium oxide is one of the key materials for GaO diodes. The preparation of high-quality gallium oxide materials is an important factor in ensuring the performance of GaO diodes. Common preparation methods include physical vapor deposition (PVD), molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). Seed crystal technology is used to generate thin films with high crystalline quality on substrates. In the preparation of GaO diodes, the selection of appropriate seed crystal technology can improve the crystal quality and growth rate. The seed crystal device usually includes a substrate support structure for fixing the substrate material to be grown. The substrate support structure needs to have stability and adjustability to accommodate substrates of different sizes and shapes. The seed crystal device usually contains one or more thin film deposition sources for providing atomic or molecular supply substances. These sources are usually heating furnaces, nozzles or source chambers in metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) systems. In order to control the growth atmosphere and provide the required raw material gas, the seed crystal device usually also includes a gas supply system. The system may include components such as gas sources, gas path control valves, and flow meters.

[0003] The existing seed crystal device cannot ensure the uniform growth of the seed crystal, resulting in poor stability in the preparation of GaO diodes. Utility Model Content

[0004] In view of this, the utility model provides a seed crystal device for preparing GaO diodes, which can solve the problem that the existing seed crystal device cannot ensure the uniform growth of seed crystals, resulting in poor stability in the preparation of GaO diodes.

[0005] The utility model is achieved in this way:

[0006] The utility model provides a seed crystal device for preparing GaO diodes, which comprises a seed crystal growth chamber, a seed crystal support, a seed crystal growth source and a gas supply mechanism. The seed crystal growth chamber is a cylindrical container, the seed crystal support is arranged inside the seed crystal growth chamber, and the seed crystal is placed on the top of the seed crystal support; the seed crystal growth source and the gas supply mechanism are both arranged inside the seed crystal growth chamber, and are used to provide raw materials required for the growth of GaO seed crystals, and the gas supply mechanism is used to provide the gas required for the growth to the inside of the seed crystal growth chamber.

[0007] The technical effects of a seed crystal device for preparing GaO diodes provided by the utility model are as follows: Seed crystal growth chamber: as the main part of the device, it accommodates the growth process of GaO seed crystals. It provides a closed environment to control temperature, pressure and gas flow to ensure the stable growth of GaO seed crystals.

[0008] Seed crystal holder: located inside the seed crystal growth chamber, used to fix GaO seed crystals and evenly distribute the growth raw materials.

[0009] Seed crystal growth source: a storage device that holds GaO raw materials.

[0010] Gas supply mechanism: consists of a gas generator and a gas pipeline.

[0011] On the basis of the above technical solution, the seed crystal device for preparing GaO diodes of the utility model can also be improved as follows:

[0012] The top of the seed crystal growth chamber is provided with a feed inlet and a discharge port, the feed inlet is used to add raw materials into the interior of the seed crystal growth chamber, and the discharge port is used to discharge ungrown seed crystals.

[0013] Furthermore, the seed crystal support is a porous structure for fixing the seed crystal and evenly distributing the growth raw materials; the top of the porous structure is a regular, uniformly sized pore structure, and the size of each pore structure is larger than the size of the seed crystal.

[0014] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the porous structure helps to transfer the gas to the seed crystal evenly and provides support so that the seed crystal maintains a stable position.

[0015] Furthermore, the seed crystal growth source is a storage device for GaO raw materials, and resistance wires are arranged at the bottom and around it. The resistance wires are used to heat the seed crystal growth source to vaporize the GaO raw materials placed inside the seed crystal growth source to provide raw materials for seed crystal growth.

[0016] The beneficial effect of adopting the above improved solution is that the GaO raw material is heated to an appropriate temperature by heating the resistance wire, so that it is vaporized and provides the raw material required for growth, which ensures a sustainable supply and a stable growth rate during the growth process.

[0017] Furthermore, the resistance wire is wound around the outside of the seed crystal growth source to uniformly heat the seed crystal growth source.

[0018] Furthermore, the gas supply mechanism includes a gas generator and a gas pipeline. The gas generator is fixed on the outside of the seed crystal growth chamber and generates the gas required for seed crystal growth through an electrochemical reaction. One end of the gas pipeline is connected to the gas generator and the other end extends into the interior of the seed crystal growth chamber.

[0019] Furthermore, the gas pipeline is spiral-shaped inside the seed crystal growth chamber, and a plurality of through holes are arranged on the side wall thereof for uniformly releasing gas into the interior of the seed crystal growth chamber.

[0020] The beneficial effects of adopting the above improved scheme are as follows: the gas generator generates the gas required for the seed crystal growth through an electrochemical reaction, and the gas pipeline transmits the gas into the seed crystal growth chamber and releases the gas evenly through the through hole, which can provide a suitable atmosphere environment to promote the growth of GaO seed crystals.

[0021] Furthermore, the bottom of the seed crystal growth chamber is fixedly connected to a support frame, and the size of the support frame is larger than the bottom size of the seed crystal growth chamber, so as to ensure the stability of the placement of the seed crystal growth chamber.

[0022] Furthermore, a protective cover is provided outside the seed crystal growth chamber, and the protective cover is used to protect the seed crystal growth process from being affected by the external environment.

[0023] Furthermore, the protective cover is a sealing structure, which is used to prevent the internal gas of the seed crystal growth chamber from leaking to ensure the stability of the GaO seed crystal growth process.

[0024] Compared with the prior art, the beneficial effects of the seed crystal device for preparing GaO diodes provided by the utility model are:

[0025] Seed crystal growth chamber: This is a cylindrical container used to contain the growth process of GaO seed crystals. It has a feed port and a discharge port, through which raw materials can be added to the interior, and through which ungrown seed crystals can be discharged.

[0026] Seed crystal holder: Located inside the seed crystal growth chamber, with the seed crystal placed on top. It is a porous structure used to fix the seed crystal and evenly distribute the growth materials. The top of the porous structure is a regular, uniformly sized pore structure, and the size of each pore structure is larger than the size of the seed crystal.

[0027] Seed crystal growth source: It is a storage device for GaO raw materials, with resistance wires at the bottom and around it. The resistance wires are used to heat the seed crystal growth source, so that the GaO raw materials placed inside are vaporized to provide raw materials for seed crystal growth. The resistance wires are wound around the outside of the seed crystal growth source to heat it evenly.

[0028] Gas supply mechanism: includes a gas generator and a gas pipeline. The gas generator is fixed on the outside of the seed crystal growth chamber and generates the gas required for seed crystal growth through electrochemical reaction. One end of the gas pipeline is connected to the gas generator, and the other end extends into the interior of the seed crystal growth chamber. The gas pipeline is spiral inside the seed crystal growth chamber, and multiple through holes are set on the side wall for uniformly releasing gas into the interior.

[0029] Support frame: connected to the bottom of the seed crystal growth chamber, with a size larger than the bottom of the seed crystal growth chamber to ensure stability.

[0030] Protective cover: Located outside the seed crystal growth chamber, it is used to protect the seed crystal growth process from the influence of the external environment. It is a sealed structure to prevent internal gas leakage and ensure the stability of the GaO seed crystal growth process. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments of the utility model will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0032] Figure 1 It is a structural schematic diagram of a seed crystal device used for preparing GaO diodes;

[0033] Figure 2 is a schematic structural diagram of the top of the seed crystal support;

[0034] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0035] 10. Seed crystal growth chamber; 11. Protective cover; 20. Seed crystal support; 30. Seed crystal growth source; 40. Gas supply mechanism; 41. Gas generator; 42. Gas pipeline. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the implementation mode of the present invention clearer, the technical solution in the implementation mode of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the implementation mode of the present invention.

[0037] like Figure 1-2As shown, an embodiment of a seed crystal device for preparing GaO diodes provided by the utility model is shown. In this embodiment, it includes a seed crystal growth chamber 10, a seed crystal support 20, a seed crystal growth source 30 and a gas supply mechanism 40. The seed crystal growth chamber 10 is a cylindrical container, the seed crystal support 20 is arranged inside the seed crystal growth chamber 10, and the seed crystal is placed on the top of the seed crystal support 20; the seed crystal growth source 30 and the gas supply mechanism 40 are both arranged inside the seed crystal growth chamber 10, and are used to provide the raw materials required for the growth of GaO seed crystals, and the gas supply mechanism 40 is used to provide the gas required for the growth to the inside of the seed crystal growth chamber 10.

[0038] Among them, in the above technical solution, a feed port and a discharge port are arranged on the top of the seed crystal growth chamber 10. The feed port is used to add raw materials into the interior of the seed crystal growth chamber 10, and the discharge port is used to discharge ungrown seed crystals.

[0039] Furthermore, in the above technical solution, the seed crystal support 20 is a porous structure for fixing the seed crystal and evenly distributing the growth raw materials; the top of the porous structure is a regular, uniformly sized pore structure, and the size of each pore structure is larger than the size of the seed crystal.

[0040] Furthermore, in the above technical solution, the seed crystal growth source 30 is a storage device for GaO raw materials, and resistance wires are arranged at the bottom and around it. The resistance wires are used to heat the seed crystal growth source 30 so that the GaO raw materials placed inside the seed crystal growth source 30 are vaporized to provide raw materials for seed crystal growth.

[0041] Furthermore, in the above technical solution, the resistance wire is wound around the outer side of the seed crystal growth source 30 to uniformly heat the seed crystal growth source 30 .

[0042] Furthermore, in the above technical solution, the gas supply mechanism 40 includes a gas generator 41 and a gas pipeline 42. The gas generator 41 is fixed on the outside of the seed crystal growth chamber 10, and generates the gas required for seed crystal growth through an electrochemical reaction. One end of the gas pipeline 42 is connected to the gas generator 41, and the other end extends into the interior of the seed crystal growth chamber 10.

[0043] Furthermore, in the above technical solution, the gas pipeline 42 is spiral-shaped inside the seed crystal growth chamber 10 , and a plurality of through holes are provided on the side wall thereof for uniformly releasing gas into the seed crystal growth chamber 10 .

[0044] Furthermore, in the above technical solution, the bottom of the seed crystal growth chamber 10 is fixedly connected to the support frame, and the size of the support frame is larger than the bottom size of the seed crystal growth chamber 10 to ensure the stability of the placement of the seed crystal growth chamber 10.

[0045] Furthermore, in the above technical solution, a protective cover 11 is provided outside the seed crystal growth chamber 10, and the protective cover 11 is used to protect the seed crystal growth process from being affected by the external environment.

[0046] Furthermore, in the above technical solution, the protective cover 11 is a sealing structure, which is used to prevent the internal gas leakage of the seed crystal growth chamber 10 to ensure the stability of the GaO seed crystal growth process.

[0047] Seed growth chamber: The seed growth chamber is a closed space whose main function is to provide a controlled environment to promote the growth of GaO seed crystals. The growth process can be controlled by adjusting parameters such as temperature, gas composition and pressure.

[0048] Seed crystal holder: The seed crystal holder is located inside the seed crystal growth chamber. Its main function is to fix the GaO seed crystal and provide uniform distribution of gas. The holder usually has a porous structure, which allows the gas to be evenly transferred to the surrounding of the seed crystal, thereby promoting growth.

[0049] Seed crystal growth source: Seed crystal growth source is a storage device for GaO raw materials. Through the heating resistance wire, the GaO raw materials are heated to an appropriate temperature, vaporized and provided as raw materials for the growth process.

[0050] Gas supply mechanism: The gas supply mechanism includes a gas generator and a gas pipeline. The gas generator generates the gas required for seed crystal growth through an electrochemical reaction, then transmits the gas to the seed crystal growth chamber through the gas pipeline and releases the gas evenly through the through hole. This can provide a suitable atmosphere environment to promote the growth of GaO seed crystals.

[0051] Support Frame: The support frame is attached to the bottom of the seed crystal growth chamber and its main function is to provide stability and support. It ensures that the entire device is structurally sound and prevents accidental movement or damage.

[0052] Protective cover: The protective cover is located outside the seed crystal growth chamber. Its main function is to protect the seed crystal growth process from interference from the external environment. It has good sealing performance, prevents gas leakage, and ensures the stability of GaO seed crystal growth.

[0053] Specifically, the principle of the utility model is:

[0054] Prepare the raw material: Place the GaO raw material in the seed crystal growth source. Make sure the resistance wire is properly connected and can provide sufficient heating.

[0055] Heating the seed crystal growth source: The resistance wire is heated by passing electricity to heat the GaO raw material to an appropriate temperature to vaporize it.

[0056] Setting up the seed crystal: Place the GaO seed crystal on top of the seed crystal holder, making sure it is stable and evenly distributed.

[0057] Control gas supply: Turn on the gas generator to generate the gas required for seed crystal growth through electrochemical reaction. The gas enters the seed crystal growth chamber through the gas pipeline and is evenly released around the seed crystal through multiple through holes.

[0058] Growth process control: Control the flow and timing of gas supply, as well as the temperature of the seed crystal growth chamber to promote the growth of GaO seed crystals. Parameters can be adjusted as needed to control the growth rate and quality.

[0059] Raw material replenishment: If necessary, more raw materials can be added into the seed crystal growth chamber through the feed port to keep the growth process going.

[0060] Monitoring and adjustment: During the growth process, the growth of the seed crystal and the equipment parameters are closely monitored. According to the actual situation, the gas supply, temperature and other parameters can be adjusted to obtain the desired growth results.

[0061] Discharge of ungrown seed crystals: If there are ungrown seed crystals that need to be discharged, they can be discharged through the discharge port.

[0062] Finishing the growth: If necessary, the growth process can be terminated and the gas supply and heating equipment can be turned off.

Claims

1. A seed crystal device for preparing GaO diodes, characterized in that: The invention comprises a seed crystal growth chamber (10), a seed crystal support (20), a seed crystal growth source (30) and a gas supply mechanism (40); the seed crystal growth chamber (10) is a cylindrical container; the seed crystal support (20) is arranged inside the seed crystal growth chamber (10); a seed crystal is placed on the top of the seed crystal support (20); the seed crystal growth source (30) and the gas supply mechanism (40) are both arranged inside the seed crystal growth chamber (10) and are used to provide raw materials required for the growth of GaO seed crystals; the gas supply mechanism (40) is used to provide the gas required for the growth to the inside of the seed crystal growth chamber (10).

2. A seed crystal device for preparing GaO diodes according to claim 1, characterized in that: The top of the seed crystal growth chamber (10) is provided with a feed inlet and a discharge outlet, the feed inlet is used to add raw materials into the interior of the seed crystal growth chamber (10), and the discharge outlet is used to discharge ungrown seed crystals.

3. A seed crystal device for preparing GaO diodes according to claim 2, characterized in that: The seed crystal support (20) is a porous structure, used for fixing the seed crystal and evenly distributing the growth raw materials; the top of the porous structure is a regular pore structure with uniform size, and the size of each pore structure is larger than the size of the seed crystal.

4. A seed crystal device for preparing GaO diodes according to claim 3, characterized in that: The seed crystal growth source (30) is a storage device for GaO raw materials, and resistance wires are arranged at the bottom and around the seed crystal growth source (30), and the resistance wires are used to heat the seed crystal growth source (30) so as to gasify the GaO raw materials placed inside the seed crystal growth source (30) to provide raw materials for seed crystal growth.

5. A seed crystal device for preparing GaO diodes according to claim 4, characterized in that: The resistance wire is wound around the outside of the seed crystal growth source (30) and is used to uniformly heat the seed crystal growth source (30).

6. A seed crystal device for preparing GaO diodes according to claim 5, characterized in that: The gas supply mechanism (40) comprises a gas generator (41) and a gas pipeline (42); the gas generator (41) is fixed outside the seed crystal growth chamber (10) and generates gas required for seed crystal growth through an electrochemical reaction; one end of the gas pipeline (42) is connected to the gas generator (41) and the other end extends into the interior of the seed crystal growth chamber (10).

7. A seed crystal device for preparing GaO diodes according to claim 6, characterized in that: The gas pipeline (42) is spiral-shaped inside the seed crystal growth chamber (10), and a plurality of through holes are arranged on its side wall for uniformly releasing gas into the seed crystal growth chamber (10).

8. A seed crystal device for preparing GaO diodes according to claim 7, characterized in that: The bottom of the seed crystal growth chamber (10) is fixedly connected to a support frame, and the size of the support frame is larger than the bottom size of the seed crystal growth chamber (10) so as to ensure the stability of the placement of the seed crystal growth chamber (10).

9. A seed crystal device for preparing GaO diodes according to claim 8, characterized in that: A protective cover (11) is arranged outside the seed crystal growth chamber (10), and the protective cover (11) is used to protect the seed crystal growth process from being affected by the external environment.

10. A seed crystal device for preparing GaO diodes according to claim 9, characterized in that: The protective cover (11) is a sealing structure, used to prevent the internal gas of the seed crystal growth chamber (10) from leaking, so as to ensure the stability of the GaO seed crystal growth process.

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