A high power semiconductor laser
By designing laser modules and beam combining modules in semiconductor lasers, the secondary spatial beam combining of lasers is realized, which solves the problem of large laser volume in the prior art, and achieves a high power output and compact structure.
Patent Information
- Application Number
- CN202421555900.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-03
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-07-03
AI Technical Summary
Existing fiber-coupled semiconductor lasers have constraints between pursuing small housing size and high power demand, resulting in larger laser volume.
By designing a laser optical path structure including a first laser module, a second beam-combining module and a focus module, the secondary space beam-combining of the laser is realized, and the space occupation is reduced.
The output of high-power laser is achieved, while the volume of semiconductor laser is reduced, achieving a compact structural design.
Smart Images
Figure CN222720854U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor lasers, in particular to a high-power semiconductor laser. Background Art
[0002] In order to solve the problem of the small shell size and high power demand of fiber-coupled semiconductor lasers, the existing technology uses a reflector to steer multiple laser chips after staggering them. The projections of multiple laser beams in the horizontal direction are superimposed to form a spatial combined laser beam in space. The combined laser beam is then steered by two reflectors and passes through a focusing lens in the opposite direction of the spatial combined laser beam to enter the optical fiber. In the existing technology, the two reflectors used to steer the combined laser beam occupy a certain space, resulting in a larger volume of the semiconductor laser. Utility Model Content
[0003] In order to solve the above problems, it is necessary to provide a high-power semiconductor laser to reduce the size of the semiconductor laser.
[0004] The present application provides a high-power semiconductor laser, comprising a laser module for emitting laser light, a reflection module for spatial beam combining and a focusing module for focusing, wherein the laser module comprises a first laser module and a second laser module for emitting laser light in a first direction, the reflection module comprises a first beam combining module, a second beam combining module and a steering module, the first beam combining module reflects the laser light emitted by the first laser module to generate a first beam combining laser light propagating in a second direction, the second beam combining module is arranged on an optical path of the first beam combining laser light and reflects the first beam combining laser light in the first direction, the laser light emitted by the second laser module passes through the top of the second beam combining module and generates a second beam combining laser light with the first beam combining laser light, and the steering module is used to steer the second beam combining laser light so that the second beam combining laser light is directed toward the focusing module.
[0005] In some embodiments, the first laser module includes at least two laser chips, which are arranged in a row in a stepped manner from high to low along the second direction. The second laser module includes a laser chip, and the laser chip of the second laser module is located higher than the highest laser chip of the first laser module. Each laser chip emits a laser beam in the first direction, and each laser beam does not interfere with each other.
[0006] In some embodiments, the first beam combining module includes at least two reflectors, which are arranged in a row in a stepped manner from high to low along the second direction. Each laser chip of the first laser module corresponds to a reflector, and a reflector reflects a beam of laser emitted by a laser chip toward the second direction. At least two laser beams are superimposed along the second direction to form a first combined laser beam.
[0007] In some embodiments, the steering module and the focusing module are arranged in sequence and spaced apart in the opposite direction of the second direction, and the second combined laser beam is directed by the steering module and then propagates toward the focusing module in the opposite direction of the second direction.
[0008] In some embodiments, the semiconductor laser also includes a plurality of collimation modules located between the laser module and the reflection module. The plurality of collimation modules are arranged in a row along the second direction and correspond one-to-one to the first laser module and the second laser module. The collimation modules are used to collimate the lasers emitted by the first laser module and the second laser module.
[0009] In some embodiments, the collimation module includes a fast-axis collimation lens and a slow-axis collimation lens, the fast-axis collimation lens is used to collimate the fast axis of the laser, and the slow-axis collimation lens is used to collimate the slow axis of the laser.
[0010] In some embodiments, the semiconductor laser further includes a filter, which is disposed between the steering module and the focusing module and is used for allowing the second combined laser beam to pass through in one direction.
[0011] In some embodiments, the focusing module includes a fast-axis focusing lens and a slow-axis focusing lens, the fast-axis focusing lens is used to perform fast-axis focusing on the second combined laser beam, and the slow-axis focusing lens is used to focus the slow axis of the second combined laser beam.
[0012] In some embodiments, the semiconductor laser further includes an optical fiber, and the optical fiber is used to transmit the second combined laser beam.
[0013] In some embodiments, the semiconductor laser further includes a housing, and the laser module, the reflection module and the focusing module are located inside the housing.
[0014] The semiconductor laser provided by the present application includes a first laser module and a second laser module. The laser emitted by the first laser module is spatially combined by the first beam combining module to generate a first combined laser. The second beam combining module is arranged on the optical path of the first combined laser. The second beam combining module reflects the first combined laser. The laser emitted by the second laser module passes through the top of the second beam combining module and is superimposed with the first combined laser to form a second combined laser. By setting two beam combining modules, the laser is spatially combined twice, and finally a second combined laser with high-power characteristics is output, so that there is no need to set two reflectors for steering, which saves space and reduces the volume of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The utility model is further described below in conjunction with the accompanying drawings and embodiments.
[0016] Figure 1 It is a schematic diagram of the optical path structure of the prior art;
[0017] Figure 2This is a schematic diagram of the optical path structure of an embodiment of the present application.
[0018] Description of main components:
[0019] 1. Laser module; 11. First laser module; 12. Second laser module;
[0020] 2. Reflection module; 21. First beam combining module; 22. Second beam combining module; 23. Steering module;
[0021] 3. Focusing module; 31. Fast axis focusing lens; 32. Slow axis focusing lens;
[0022] 4. Collimation module; 41. Fast axis collimation lens; 42. Slow axis collimation lens;
[0023] 5. Filter;
[0024] 6. Optical fiber;
[0025] 7. Shell;
[0026] A, first combined laser beam; B, second combined laser beam;
[0027] X, first direction; Y, second direction. DETAILED DESCRIPTION
[0028] In order to more clearly illustrate the purpose, technical solution and advantages of the utility model, hereinafter, the present application describes the embodiments of the utility model with reference to the accompanying drawings, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. It should be understood that these embodiments are used to explain the technical principles of the utility model, which are only exemplary and cannot be understood as limiting the technology disclosed in this application or the application and use of the technology.
[0029] It should be noted that, if there is no conflict, the various features in the embodiments of the present application can be combined with each other, all within the protection scope of the present application. In addition, although the functional module division is performed in the device schematic, in some cases, the module division can be different from that in the device.
[0030] Unless otherwise specified, in the specification and claims of this application, the terms "first", "second", etc. are only used to distinguish different objects, and do not imply or require a specific relationship or order between these objects. In addition, the terms "parallel" and "perpendicular" are used to describe the ideal state between two objects. In actual production or use, the two objects may be in a state that is approximately perpendicular to each other.
[0031] For the convenience of explanation, a coordinate system is established in the drawings, where the X-axis represents the first direction X and the Y-axis represents the second direction Y.
[0032] See also Figure 1 In the prior art, multiple laser chips emit multiple laser beams in a first direction X, and multiple reflectors reflect the multiple laser beams in a second direction Y. The multiple laser beams are superimposed along the second direction Y to form a high-power combined laser beam. The combined laser beam first passes through a reflector to turn toward the first direction X, then passes through another reflector to turn toward the opposite direction of the second direction Y, and finally is focused by a focusing lens and enters the optical fiber.
[0033] See also Figure 2 The present application provides a high-power semiconductor laser. The semiconductor laser includes a laser module 1, a reflection module 2 and a focusing module 3. The laser module 1 includes a first laser module 11 and a second laser module 12. The first laser module 11 and the second laser module 12 emit lasers in a first direction X. The reflection module 2 includes a first beam combining module 21, a second beam combining module 22 and a steering module 23. The first beam combining module 21 reflects the laser emitted by the first laser module 11 to generate a first beam combining laser A propagating in a second direction Y. The second beam combining module 22 is arranged on the optical path of the first beam combining laser A and reflects the first beam combining laser A in the first direction X. The laser emitted by the second laser module 12 passes through the top of the second beam combining module 22 and is superimposed with the first beam combining laser A to form a second beam combining laser B. The second beam combining laser B is emitted toward the steering module 23 along the first direction X, and propagates in the opposite direction of the second direction Y after being turned by the steering module 23. The focusing module 3 is located on the optical path of the second beam combining laser B and focuses the second beam combining laser B.
[0034] Compared with the prior art, the present application first performs a first spatial combination on the laser emitted by the first laser module 11 to obtain a first combined laser beam A, and then performs a second spatial combination on the first combined laser beam A and the laser emitted by the second laser module 12 to obtain a second combined laser beam B, thereby saving space in the second direction Y and making the structure of the semiconductor laser more compact and smaller in size.
[0035] The first laser module 11 includes at least two laser chips, which are arranged in a row in a stepped manner from high to low along the second direction Y. Each laser chip emits a laser beam in the first direction X. The lasers emitted by all laser chips are parallel to each other and do not interfere with each other.
[0036] The first beam combining module 21 includes at least two reflectors, which are arranged in a row in a stepped manner from high to low along the second direction Y. Each laser chip of the first laser module 11 corresponds to a reflector, and the reflectors are arranged obliquely relative to the optical path of the laser. The laser chip of the first laser module 11 emits at least two laser beams, which are reflected by the reflectors and superimposed to form a first combined laser beam A. The first combined laser beam A propagates along the second direction Y, and the second beam combining module 22 is obliquely arranged on the optical path of the first combined laser beam A. The second beam combining module 22 reflects the first combined laser beam A, and the first combined laser beam A after being reflected by the second beam combining module 22 propagates along the first direction X.
[0037] The second laser module 12 includes a laser chip. The laser chip of the second laser module 12 emits laser light in the first direction X. The height of the laser chip of the second laser module 12 is higher than that of all the laser chips of the first laser module 11. The height of the laser light emitted by the laser chip of the second laser module 12 projected in the first direction X is also higher than that of the laser light emitted by the laser chip of the first laser module 11. The laser light emitted by the laser chip of the second laser module 12 passes through the top of the second beam combining module 22, is superimposed with the first beam combining laser light A to form a second beam combining laser light B, and propagates along the first direction X.
[0038] It should be noted that the "high" and "low" in the above embodiments refer to the relative vertical attachment. Figure 2 The distance outward from the paper.
[0039] A steering module 23 is obliquely arranged in the propagation direction of the second combined laser beam B. The steering module 23 and the focusing module 3 are sequentially arranged in an interval in the opposite direction of the second direction Y. The second combined laser beam B is reflected by the second reflection module 2 and propagates toward the focusing module 3 in the opposite direction of the second direction Y. The focusing module 3 focuses the second combined laser beam B. The second combined laser beam B focused by the focusing module 3 is coupled into the optical fiber 6 and transmitted in the optical fiber 6.
[0040] In some embodiments, the focusing module 3 includes a fast-axis focusing lens 31 and a slow-axis focusing lens 32, which are arranged at intervals along the optical path direction of the second combined laser beam B. The fast-axis focusing lens 31 focuses on the fast axis of the second combined laser beam B, and the slow-axis focusing lens 32 focuses on the slow axis of the second combined laser beam B.
[0041] The semiconductor laser also includes a plurality of collimation modules 4, which are arranged in a row along the second direction Y between the laser module 1 and the reflection module 2, and correspond one-to-one to the laser chips of the first laser module 11 and the second laser module 12, and collimate the lasers emitted by the laser chips to facilitate laser transmission.
[0042] In some embodiments, the collimation module 4 includes a fast-axis collimation lens 41 and a slow-axis collimation lens 42. The fast-axis collimation lens 41 is attached to the light-emitting surface of the laser chip to perform fast-axis collimation on the laser emitted by the laser chip. The slow-axis collimation lens 42 is arranged on the side of the fast-axis collimation lens 41 away from the laser chip to perform slow-axis collimation on the laser.
[0043] The semiconductor laser also includes a filter 5, which is disposed between the steering module 23 and the focusing module 3. The second combined laser beam B first passes through the filter 5 and then through the focusing module 3. The filter 5 can only transmit the laser in one direction to prevent the laser return light from damaging the chip.
[0044] The semiconductor laser also includes a shell 7, and the laser module 1, the reflection module 2, the focusing module 3, the collimation module 4 and the filter 5 are all located in the shell 7. The optical fiber 6 is partially located in the shell 7 for receiving the second combined laser beam B, and the other part is located outside the shell 7 for transmitting the second combined laser beam B.
[0045] In summary, the high-power semiconductor laser provided by the present application includes a first laser module 11 and a second laser module 12 that emit laser light in a first direction X. The first laser module 11 includes at least two laser chips, and the laser chips are arranged in a row in a stepped manner from high to low along the second direction Y. One laser chip corresponds to a reflector, and each reflector reflects a laser beam in the second direction Y. After at least two laser beams are reflected by the reflector, they are superimposed along the second direction Y to form a first combined laser beam A. The first combined laser beam A is then reflected by the second combined beam module 22. The reflected first combined laser beam A propagates in the first direction X. The laser emitted by the second laser module 12 passes through the top of the second combined beam module 22 and is superimposed with the first combined laser beam A along the first direction X to form a second combined laser beam B. The second combined laser beam B is deflected by the deflection module 23, and is focused by the focusing module 3 and then output along the optical fiber 6. The lasers emitted by the first laser module 11 and the second laser module 12 are spatially combined twice in two directions, which saves the space of the two reflectors used for deflection and achieves the effect of reducing the volume.
[0046] It should be understood that the above-mentioned embodiments disclosed in this application are only for the convenience of description and example, and the technical solutions obtained by those skilled in the art by simple modification or equivalent substitution of the above-mentioned embodiments should fall within the scope of protection required by this application.
Claims
1. A high-power semiconductor laser, comprising a laser module for emitting laser light, a reflection module for spatial beam combining, and a focusing module for focusing, characterized in that: The laser module includes a first laser module and a second laser module that emit lasers in a first direction, and the reflection module includes a first beam combining module, a second beam combining module and a steering module. The first beam combining module reflects the laser emitted by the first laser module to generate a first beam combining laser that propagates in a second direction. The second beam combining module is arranged on an optical path of the first beam combining laser and reflects the first beam combining laser in the first direction. The laser emitted by the second laser module passes through the top of the second beam combining module and generates a second beam combining laser with the first beam combining laser. The steering module is used to steer the second beam combining laser so that the second beam combining laser is emitted toward the focusing module.
2. The high power semiconductor laser according to claim 1, characterized in that: The first laser module includes at least two laser chips, which are arranged in a row in a stepped manner from high to low along the second direction. The second laser module includes a laser chip, and the laser chip of the second laser module is located higher than the highest laser chip of the first laser module. Each laser chip emits a laser beam in the first direction, and each laser beam does not interfere with each other.
3. The high power semiconductor laser according to claim 1, characterized in that: The first beam combining module includes at least two reflectors, which are arranged in a row in a stepped manner from high to low along the second direction. Each laser chip of the first laser module corresponds to a reflector, and a reflector reflects a beam of laser emitted by a laser chip toward the second direction. At least two laser beams are superimposed along the second direction to form a first combined laser beam.
4. The high power semiconductor laser according to claim 1, characterized in that: The steering module and the focusing module are arranged in sequence and spaced apart in the opposite direction of the second direction. After being deflected by the steering module, the second combined laser beam propagates toward the focusing module in the opposite direction of the second direction.
5. The high power semiconductor laser according to claim 1, characterized in that: The semiconductor laser also includes a plurality of collimation modules located between the laser module and the reflection module. The plurality of collimation modules are arranged in a row along the second direction and correspond one-to-one to the first laser module and the second laser module. The collimation modules are used to collimate the lasers emitted by the first laser module and the second laser module.
6. The high power semiconductor laser according to claim 5, characterized in that: The collimation module comprises a fast-axis collimation lens and a slow-axis collimation lens. The fast-axis collimation lens is used to collimate the fast axis of the laser, and the slow-axis collimation lens is used to collimate the slow axis of the laser.
7. The high power semiconductor laser according to claim 1, characterized in that: The semiconductor laser further includes a filter, which is disposed between the steering module and the focusing module and is used for allowing the second combined laser beam to pass through in one direction.
8. The high power semiconductor laser according to claim 1, characterized in that: The focusing module comprises a fast-axis focusing lens and a slow-axis focusing lens. The fast-axis focusing lens is used to perform fast-axis focusing on the second combined laser beam, and the slow-axis focusing lens is used to focus the slow axis of the second combined laser beam.
9. The high power semiconductor laser according to claim 1, characterized in that: The semiconductor laser further comprises an optical fiber, which is used for transmitting the second combined laser beam.
10. The high power semiconductor laser according to claim 1, characterized in that: The semiconductor laser further comprises a housing, wherein the laser module, the reflection module and the focusing module are located in the housing.