Forward-mounted LEDs and display panels

Abstract

The present disclosure provides a normal-mounted light-emitting diode and a display panel, belonging to the field of optoelectronic manufacturing technology. The normal-mounted light-emitting diode comprises: an epitaxial layer, an insulating layer and an electrode, wherein the insulating layer is located on the surface of the epitaxial layer, the electrode is located above the epitaxial layer, and the electrode is electrically connected to the epitaxial layer; the insulating layer comprises a first insulating sublayer and a second insulating sublayer, wherein the first insulating sublayer and the second insulating sublayer are sequentially stacked on the surface of the epitaxial layer, one of the first insulating sublayer and the second insulating sublayer is an Al2O3 layer, and the other of the first insulating sublayer and the second insulating sublayer is a SiO2 layer. The embodiments of the present disclosure can improve the problem of light-emitting diode failure due to water vapor intrusion.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a front-mounted light emitting diode and a display panel. Background Art

[0002] Light Emitting Diode (LED) is a new product with great influence in the optoelectronics industry. It usually includes an epitaxial layer and an electrode, and the electrode is electrically connected to the epitaxial layer so that the current of an external power source can be transmitted to the epitaxial layer through the electrode.

[0003] In the related art, the upright light emitting diode further includes an insulating layer which is stacked on the surface of the epitaxial layer and has a through hole exposing the epitaxial layer. The electrode is located on the surface of the insulating layer away from the substrate and is connected to the epitaxial layer through the through hole.

[0004] However, in the related art, the insulating layer of the mounted light-emitting diode usually has defects such as pinholes and microcracks. During the process of packaging and using the light-emitting diode, water vapor will enter the interior of the light-emitting diode through the pinholes and microcracks in the insulating layer, eventually causing the light-emitting diode to fail. Utility Model Content

[0005] The disclosed embodiment provides a front-mounted light emitting diode and a display panel, which can improve the problem of light emitting diode failure due to water vapor intrusion. The technical solution is as follows:

[0006] On the one hand, an embodiment of the present disclosure provides a face-up light-emitting diode, which includes: an epitaxial layer, an insulating layer and an electrode, wherein the insulating layer is located on the surface of the epitaxial layer, the electrode is located above the epitaxial layer, and the electrode is electrically connected to the epitaxial layer; the insulating layer includes a first insulating sublayer and a second insulating sublayer, the first insulating sublayer and the second insulating sublayer are sequentially stacked on the surface of the epitaxial layer, one of the first insulating sublayer and the second insulating sublayer is an Al2O3 layer, and the other is a SiO2 layer.

[0007] Optionally, the first insulating sublayer is an Al2O3 layer, and the second insulating sublayer is a SiO2 layer.

[0008] Optionally, a ratio of a thickness of the first insulating sublayer to a thickness of the second insulating sublayer is 1 / 25 to 6 / 5.

[0009] Optionally, the thickness of the first insulating sublayer is 200 angstroms to 2400 angstroms, and the thickness of the second insulating sublayer is 2000 angstroms to 5000 angstroms.

[0010] Optionally, the second insulating sublayer has a through hole exposing the epitaxial layer, the electrode is located in the through hole, and an orthographic projection of the electrode on a surface of the epitaxial layer is located within an orthographic projection of the through hole on the surface of the epitaxial layer.

[0011] Optionally, the first insulating sublayer and the second insulating sublayer are further stacked on the electrode, and the second insulating sublayer has a through hole exposing the electrode.

[0012] Optionally, the electrode includes at least one of a Cr layer, an Al layer, an AlCu layer, a Ti layer, a Ni layer, a Pt layer and an Au layer.

[0013] Optionally, the light-emitting diode further includes a current blocking layer and a transparent conductive layer, wherein the current blocking layer is located on the surface of the epitaxial layer, the transparent conductive layer is located on the surface of the epitaxial layer, and the transparent conductive layer covers the current blocking layer, and the through hole of the second insulating sublayer exposes the transparent conductive layer.

[0014] Optionally, the transparent conductive layer has a thickness of 700 angstroms to 1100 angstroms.

[0015] On the other hand, an embodiment of the present disclosure further provides a display panel, which includes a plurality of front-mounted light-emitting diodes and a driving backplane as described above, wherein the plurality of front-mounted light-emitting diodes are located on the driving backplane.

[0016] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure include at least:

[0017] The insulating layer in the upright light emitting diode provided by the embodiment of the present disclosure includes a first insulating sublayer and a second insulating sublayer stacked on the surface of the epitaxial layer, one of the first insulating sublayer and the second insulating sublayer is an Al2O3 layer, and the other of the first insulating sublayer and the second insulating sublayer is a SiO2 layer. The Al2O3 layer is usually formed by an atomic layer deposition process (Atomic Layer Deposition, ALD). In the process of ALD depositing an Al2O3 film to form an Al2O3 layer, due to the high flatness of the Al2O3 film and the absence of pinholes on the surface, the formed Al2O3 layer is an excellent barrier layer, which can prevent water vapor from invading the inner wall of the light emitting diode and avoid the problem of light emitting diode failure; at the same time, the three-dimensional conformality of the Al2O3 film is excellent, and the deposited Al2O3 film and the substrate shape are completely consistent, so that an Al2O3 layer with good crystal quality can be obtained. The SiO2 layer has good insulation, and different insulating materials are used to form a composite film layer, so that the insulation effect of the insulating layer is better, which can prevent the epitaxial layer from contacting other impurities in the external environment and leaking electricity, thereby improving the reliability of the light emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 It is a structural schematic diagram of a normal-mounted light-emitting diode provided by an embodiment of the present disclosure;

[0020] Figure 2 It is a schematic diagram of the structure of another upright light emitting diode provided in an embodiment of the present disclosure.

[0021] The descriptions of the marks in the figure are as follows:

[0022] 10. Substrate;

[0023] 20. epitaxial layer; 21. first semiconductor layer; 22. multi-quantum well layer; 23. second semiconductor layer;

[0024] 30. Insulating layer; 31. First insulating sublayer; 32. Second insulating sublayer; 33. Through hole;

[0025] 40. Electrode;

[0026] 51. Current blocking layer; 52. Transparent conductive layer. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0028] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0029] Figure 1 Schematic diagram of a structure of a normal-mounted light-emitting diode provided by an embodiment of the present disclosure. Figure 1 As shown, the face-up light emitting diode comprises: an epitaxial layer 20 , an insulating layer 30 and an electrode 40 , wherein the insulating layer 30 is located on the surface of the epitaxial layer 20 .

[0030] like Figure 1 As shown, the insulating layer 30 includes a first insulating sublayer 31 and a second insulating sublayer 32, and the first insulating sublayer 31 and the second insulating sublayer 32 are sequentially stacked on the surface of the epitaxial layer 20, one of the first insulating sublayer 31 and the second insulating sublayer 32 is an Al2O3 layer, and the other of the first insulating sublayer 31 and the second insulating sublayer 32 is a SiO2 layer.

[0031] like Figure 1 As shown, the second insulating sublayer 32 has a through hole 33 exposing the epitaxial layer 20 , and the electrode 40 is connected to the epitaxial layer 20 through the through hole 33 .

[0032] The insulating layer 30 in the upright light emitting diode provided by the embodiment of the present disclosure includes a first insulating sublayer 31 and a second insulating sublayer 32 stacked on the surface of the epitaxial layer 20, one of the first insulating sublayer 31 and the second insulating sublayer 32 is an Al2O3 layer, and the other of the first insulating sublayer 31 and the second insulating sublayer 32 is a SiO2 layer. The Al2O3 layer is usually formed by an ALD process. In the process of ALD deposition of an Al2O3 film to form an Al2O3 layer, since the Al2O3 film has high flatness and no pinholes on the surface, the formed Al2O3 layer is an excellent barrier layer, which can prevent water vapor from invading the inner wall of the light emitting diode and avoid the problem of light emitting diode failure; at the same time, the three-dimensional conformality of the Al2O3 film is extremely good, and the deposited Al2O3 film is completely consistent with the shape of the substrate, so that an Al2O3 layer with good crystal quality can be obtained. The SiO2 layer has good insulation properties. Using different insulating materials to form a composite film layer makes the insulation effect of the insulating layer 30 better, which can prevent the epitaxial layer 20 from contacting other impurities in the external environment and causing leakage, thereby improving the reliability of the light-emitting diode.

[0033] In one implementation, the first insulating sublayer 31 is an Al2O3 layer, and the second insulating sublayer 32 is a SiO2 layer.

[0034] Among them, the first insulating sublayer 31 is first attached to the surface of the epitaxial layer 20. Since the Al2O3 film has high flatness and no pinholes on the surface, the use of the Al2O3 layer as the first insulating sublayer 31 can protect the epitaxial layer 20 from being invaded by water vapor; and the SiO2 layer has good insulation properties. The SiO2 layer is used to cover the Al2O3 layer, so that the SiO2 layer and the Al2O3 layer form a composite film layer, so that the overall insulation effect of the insulating layer 30 is better, and the epitaxial layer 20 can be prevented from contacting with other impurities in the external environment and leaking electricity, thereby improving the reliability of the light-emitting diode.

[0035] Optionally, the ratio of the thickness of the first insulating sublayer 31 to the thickness of the second insulating sublayer 32 is 1 / 25 to 6 / 5.

[0036] For working environments with more water vapor, such as humid environments, the thickness of the first insulating layer 30 may be not less than the thickness of the second insulating sublayer 32 to ensure that the thickness of the Al2O3 layer is large enough to fully block the intrusion of water vapor.

[0037] Exemplarily, the ratio of the thickness of the first insulating sublayer 31 to the thickness of the second insulating sublayer 32 is 6 / 5.

[0038] For a working environment with less water vapor, for example, a dry environment, the thickness of the first insulating sublayer can be smaller than the thickness of the second insulating sublayer, as long as the Al2O3 layer exists and can block the intrusion of water vapor.

[0039] Exemplarily, the ratio of the thickness of the first insulating sublayer 31 to the thickness of the second insulating sublayer 32 is 1 / 10.

[0040] Optionally, the thickness of the first insulating sublayer 31 is 200 angstroms to 2400 angstroms. Setting the thickness of the first insulating sublayer 31 within the above range can prevent the thickness of the Al2O3 layer from being too small and failing to fully block the intrusion of water vapor.

[0041] Exemplarily, the thickness of the first insulating sublayer 31 is 1200 angstroms.

[0042] Optionally, the thickness of the second insulating sublayer 32 is 2000 angstroms to 5000 angstroms. Setting the thickness of the second insulating sublayer 32 within the above range can prevent the second insulating sublayer 32 from being too thin and failing to protect the first insulating sublayer 31. At the same time, it can also prevent the second insulating sublayer 32 from being too thick and absorbing more light, affecting the luminous effect.

[0043] Exemplarily, the thickness of the first insulating sublayer 31 is 3000 angstroms.

[0044] In the disclosed embodiment, the Al2O3 layer is formed by deposition using the ALD technology, and the SiO2 layer is formed by deposition using the PECVD (Plasma Enhanced Chemical Vapor Deposition) technology.

[0045] Among them, the Al2O3 layer formed by ALD has high density, no pinholes, excellent three-dimensional conformality, and good step coverage. It is an excellent barrier layer and insulating film layer, which can significantly improve the high temperature and high humidity resistance of the light-emitting diode, improve the ability to isolate water vapor and ion intrusion, and improve reliability.

[0046] The preparation of the Al2O3 layer may include: first, using ALD equipment for deposition, controlling the temperature to be 180°C to 260°C, for example, controlling the temperature to be 200°C to 220°C; then, introducing the first precursor H2O (gaseous state) to be adsorbed on the surface of the substrate; then, after the adsorption is completed, flushing the remaining gas with N2; then, introducing the second precursor gas TMA (Trimethylaluminum, trimethylaluminum) to chemically react with the first precursor adsorbed on the surface of the substrate; then, flushing the remaining gas with N2; then, repeating the above process until the Al2O3 layer grows to a specified thickness.

[0047] The preparation of the SiO2 layer may include: depositing the SiO2 layer using PECVD equipment in an environment with a temperature of 200°C to 260°C.

[0048] Alternatively, if Figure 1As shown, the light emitting diode further includes a substrate 10 , and the epitaxial layer 20 includes a first semiconductor layer 21 , a multi-quantum well layer 22 , and a second semiconductor layer 23 sequentially stacked on the substrate 10 , and a surface of the second semiconductor layer 23 has a groove exposing the first semiconductor layer 21 .

[0049] In the embodiment of the present disclosure, one of the first semiconductor layer 21 and the second semiconductor layer 23 is a p-type layer, and the other of the first semiconductor layer 21 and the second semiconductor layer 23 is an n-type layer.

[0050] Exemplarily, the first semiconductor layer 21 is an n-type layer, and the second semiconductor layer 23 is a p-type layer.

[0051] Optionally, the first semiconductor layer 21 is a silicon-doped n-type GaN layer, and the thickness of the n-type GaN layer may be 0.5 μm to 3 μm.

[0052] Optionally, the multi-quantum well layer 22 includes alternately grown InGaN quantum well layers and GaN quantum barrier layers. The multi-quantum well layer 22 may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0053] As an example, in the embodiment of the present disclosure, the multi-quantum well layer 22 includes five periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0054] Optionally, the thickness of the multi-quantum well layer 22 may be 150 nm to 200 nm.

[0055] Optionally, the second semiconductor layer 23 is a magnesium-doped p-type GaN layer. The thickness of the p-type GaN layer may be 0.5 μm to 3 μm.

[0056] It should be noted that the first semiconductor layer 21 , the second semiconductor layer 23 and the multi-quantum well layer 22 may also be film layers of other materials, which is not limited in the embodiments of the present disclosure.

[0057] In the embodiments of the present disclosure, Figure 1 As shown, the epitaxial layer 20 is located on the surface of the substrate, and the substrate is located at the backlight side of the epitaxial layer 20 .

[0058] Exemplarily, the substrate is a sapphire substrate. The sapphire substrate has a relatively high light transmittance, that is, the substrate is a transparent substrate. In addition, the sapphire material is relatively hard and has relatively stable chemical properties, so that the light-emitting diode has good light-emitting effect and stability.

[0059] Exemplarily, the electrode 40 is located on the surface of the epitaxial layer 20, and the electrode 40 is located at the edge of the epitaxial layer 20. By arranging the electrode 40 at the edge region of the epitaxial layer 20, the electrode 40 is prevented from shading light to improve the light emitting effect.

[0060] like Figure 1 As shown, the light emitting diode has two electrodes 40 , one electrode 40 is located in the groove and connected to the first semiconductor layer 21 , and the other electrode 40 is located above the second semiconductor layer 23 .

[0061] Exemplarily, the two electrodes 40 can be respectively arranged at two diagonal positions of the epitaxial layer 20. Since this type of light-emitting diode is a normal light-emitting diode, the light-emitting side is the side of the epitaxial layer 20 away from the substrate. Therefore, the electrode 40 is arranged at the corner of the epitaxial layer 20, so as to prevent the light emitted from the epitaxial layer 20 to the light-emitting side from being reflected or absorbed by the electrode 40, thereby improving the brightness of the light-emitting diode.

[0062] Alternatively, if Figure 1 As shown, the light emitting diode further includes: a current blocking layer 51 located on the surface of the epitaxial layer 20 , a transparent conductive layer 52 located on the surface of the epitaxial layer 20 , and the transparent conductive layer 52 covers the current blocking layer 51 , and the through hole 33 of the second insulating sublayer 32 exposes the transparent conductive layer 52 .

[0063] In the disclosed embodiment, the orthographic projection of the electrode 40 on the substrate is located within the orthographic projection of the current blocking layer 51 on the substrate. In this way, the current blocking layer 51 is arranged directly below the electrode 40 to prevent the current from being directly transmitted vertically to the epitaxial layer 20 below after the current is injected into the electrode 40, so that the current can expand horizontally.

[0064] Exemplarily, the current blocking layer 51 is a silicon oxide layer, wherein the thickness of the current blocking layer 51 is 800 angstroms to 2000 angstroms.

[0065] Optionally, the transparent conductive layer 52 is an indium tin oxide (ITO) layer. The ITO layer has good transmittance and low resistivity. Using the ITO layer as the transparent conductive layer 52 can allow more light to be transmitted from the transparent conductive layer 52, thereby ensuring the effect; at the same time, due to the low resistivity, it is also convenient for carrier conduction and improves injection efficiency.

[0066] Optionally, the transparent conductive layer 52 is an indium zinc oxide (IZO) layer. The indium zinc oxide layer has good transmittance and low resistivity. Using the indium zinc oxide layer as the transparent conductive layer 52 can allow more light to be transmitted from the transparent conductive layer 52, thereby ensuring the effect; at the same time, due to the low resistivity, it is also convenient for carrier conduction and improves injection efficiency.

[0067] Exemplarily, the thickness of the transparent conductive layer 52 is 700 angstroms to 1100 angstroms. For example, the thickness of the transparent conductive layer 52 is 1000 angstroms.

[0068] In one implementation of the present disclosure, Figure 1 As shown, the second insulating sublayer 32 has a through hole 33 exposing the transparent conductive layer 52 , the electrode 40 is located in the through hole 33 , and the orthographic projection of the electrode 40 on the surface of the epitaxial layer 20 is located within the orthographic projection of the through hole 33 on the surface of the epitaxial layer 20 .

[0069] By reducing the size of the electrode 40 to be smaller than the size of the through hole 33 of the second insulating sublayer 32 exposing the transparent conductive layer 52 , the electrode 40 does not occupy a large area above the epitaxial layer 20 , thereby preventing the electrode 40 from blocking light.

[0070] In another implementation of the present disclosure, Figure 2 FIG. 1 is a schematic diagram of another structure of a normal-mounted light-emitting diode provided in an embodiment of the present disclosure. Figure 2 As shown, the first insulating sublayer 31 and the second insulating sublayer 32 are further stacked on the electrode 40 , and the second insulating sublayer 32 has a through hole 33 exposing the electrode 40 .

[0071] In the above implementation, the insulating layer 30 also covers the electrode 40, and a through hole 33 exposing the electrode 40 is formed on the second insulating sublayer, so that the electrode 40 is wrapped by the insulating layer 30, leaving less exposed area of ​​the electrode 40, thereby avoiding the problem of impurities in the external environment contacting the electrode 40 and causing a short circuit.

[0072] In the embodiment of the present disclosure, the electrode 40 includes a plurality of stacked metal layers, including at least one of a Cr layer, an Al layer, an AlCu layer, a Ti layer, a Ni layer, a Pt layer and an Au layer.

[0073] In one implementation, the electrode 40 includes a stacked Cr layer, an Al layer, an AlCu layer, a Ti layer, a Ni layer, a Pt layer, and an Au layer.

[0074] Among them, the Cr layer can be successfully deposited on other films as an adhesion layer without peeling or cracking. The Ni layer has good corrosion resistance and wear resistance. The Pt layer has good conductivity and protection. The Au layer has good conductivity.

[0075] Exemplarily, the thickness of the Cr layer is 1000 angstroms to 2000 angstroms. For example, the thickness of the Cr layer is 1500 angstroms.

[0076] Exemplarily, the thickness of the Al layer is 100 angstroms to 2000 angstroms. For example, the thickness of the Al layer is 500 angstroms.

[0077] Exemplarily, the thickness of the AlCu layer is 700 angstroms to 2000 angstroms. For example, the thickness of the AlCu layer is 800 angstroms.

[0078] Exemplarily, the thickness of the Ti layer is 100 angstroms to 1000 angstroms. For example, the thickness of the Ti layer is 200 angstroms.

[0079] Exemplarily, the thickness of the Ni layer is 700 angstroms to 1000 angstroms. For example, the thickness of the Ni layer is 800 angstroms.

[0080] Exemplarily, the thickness of the Pt layer is 100 angstroms to 1000 angstroms. For example, the thickness of the Pt layer is 500 angstroms.

[0081] Exemplarily, the thickness of the Au layer is 100 angstroms to 500 angstroms. For example, the thickness of the Au layer is 300 angstroms.

[0082] An embodiment of the present disclosure provides a display panel, which includes a plurality of front-mounted light emitting diodes and a driving backplane as described above, wherein the plurality of front-mounted light emitting diodes are located on the driving backplane.

[0083] The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.

[0084] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A normal mounted light emitting diode, characterized in that: The upright light-emitting diode comprises: an epitaxial layer (20), an insulating layer (30) and an electrode (40), wherein the insulating layer (30) is located on the surface of the epitaxial layer (20), the electrode (40) is located above the epitaxial layer (20), and the electrode (40) is electrically connected to the epitaxial layer (20); The insulating layer (30) comprises a first insulating sublayer (31) and a second insulating sublayer (32), wherein the first insulating sublayer (31) and the second insulating sublayer (32) are sequentially stacked on the surface of the epitaxial layer (20), and one of the first insulating sublayer (31) and the second insulating sublayer (32) is an Al2O3 layer, and the other is a SiO2 layer.

2. The upright light emitting diode according to claim 1, characterized in that: The first insulating sublayer (31) is an Al2O3 layer, and the second insulating sublayer (32) is a SiO2 layer.

3. The upright light emitting diode according to claim 2, characterized in that: The ratio of the thickness of the first insulating sublayer (31) to the thickness of the second insulating sublayer (32) is 1 / 25 to 6 / 5.

4. The upright light emitting diode according to claim 3, characterized in that: The thickness of the first insulating sublayer (31) is 200 angstroms to 2400 angstroms, and the thickness of the second insulating sublayer (32) is 2000 angstroms to 5000 angstroms.

5. The front-mounted light emitting diode according to claim 1, characterized in that: The second insulating sublayer (32) has a through hole (33) exposing the epitaxial layer (20), the electrode (40) is located in the through hole (33), and the orthographic projection of the electrode (40) on the surface of the epitaxial layer (20) is located within the orthographic projection of the through hole (33) on the surface of the epitaxial layer (20).

6. The front-mounted light emitting diode according to claim 1, characterized in that: The first insulating sublayer (31) and the second insulating sublayer (32) are further stacked on the electrode (40), and the second insulating sublayer (32) has a through hole (33) exposing the electrode (40).

7. The upright light emitting diode according to any one of claims 1 to 6, characterized in that: The electrode (40) includes at least one of a Cr layer, an Al layer, an AlCu layer, a Ti layer, a Ni layer, a Pt layer and an Au layer.

8. The front-mounted light emitting diode according to any one of claims 1 to 6, characterized in that: The light-emitting diode further comprises a current blocking layer (51) and a transparent conductive layer (52), wherein the current blocking layer (51) is located on the surface of the epitaxial layer (20), the transparent conductive layer (52) is located on the surface of the epitaxial layer (20), and the transparent conductive layer (52) covers the current blocking layer (51), and the through hole (33) of the second insulating sublayer (32) exposes the transparent conductive layer (52).

9. The front-mounted light emitting diode according to claim 8, characterized in that: The thickness of the transparent conductive layer (52) is 700 angstroms to 1100 angstroms.

10. A display panel, characterized in that: The display panel comprises a plurality of front-mounted light emitting diodes and a driving backplane as claimed in any one of claims 1 to 9, wherein the plurality of front-mounted light emitting diodes are located on the driving backplane.

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