Quantum dot chip structure
By processing the quantum dot structure on a transparent substrate, filling the quantum dot layer and placing the chip on the top of the pit, the problem of low reliability of existing quantum dot chips is solved, and higher conversion efficiency and reliability are achieved.
Patent Information
- Application Number
- CN202421407055.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-19
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-06-19
AI Technical Summary
Existing quantum dot chips have low reliability and are greatly affected by light and heat, making it difficult to meet the needs of high reliability.
A quantum dot chip structure is designed, using a transparent substrate and a light emitting unit, in which the quantum dot layer is filled in the pit and the chip is located on the top of the pit. This structure improves the conversion efficiency of the quantum dots and the reliability of the chip.
By processing the quantum dot structure on a transparent substrate, the production process is simplified, the alignment effect is improved, the conversion efficiency of the quantum dots is enhanced, and the reliability of the chip is improved through the sealing dielectric layer and reflective layer design.
Smart Images
Figure CN222721926U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of quantum dots, in particular to a quantum dot chip structure. Background Art
[0002] Light-emitting diodes (LEDs) are light-emitting devices that emit photons based on the radiative recombination of electrons and holes in semiconductor materials. In 1997, Japanese scientists Shuji Nakamura and others combined blue gallium nitride (GaN) LED chips with yellow phosphors (Y3Al5O12:Ce3+, YAG) to create the world's first white light LED, which was marketed as a commercial lighting source.
[0003] The mainstream commercial white light LED packaging technology usually uses rare earth phosphors as color conversion materials, and uses a single-color short-wavelength LED chip to excite the phosphors to synthesize white light, such as blue light LED + yellow-green phosphor, near-ultraviolet LED + three-primary color phosphor, etc. The blue light LED + YAG yellow phosphor solution is the most commonly used, but its spectrum has a wide half-peak width and lacks red light components. When used as a display backlight, the color gamut it can cover is small (about 70% of NTSC), making it difficult to display delicate color details and unable to meet people's demand for high-quality display.
[0004] In order to realize high color gamut white light LED, blue light LED + green phosphor + red phosphor are often used. The best color gamut performance is the blue light LED + β-Sialon + KSF solution, and its NTSC color gamut can reach about 95%. However, this solution has the following disadvantages: 1. The red and green wavelengths of rare earth phosphors are relatively fixed, and the wavelength cannot be flexibly adjusted; 2. The half-peak width of β-Sialon is relatively wide, about 50nm, which limits the further improvement of the color gamut; 3. The molar extinction coefficient of the phosphor is low, resulting in a higher dosage under the same color point requirements; 4. The phosphor is generally excited by short-wave strong blue light, which has certain damage to human eye health; 5. The phosphor has a slow response speed and a low refresh rate, which is easy to cause screen smearing; 6. The application patents of β-Sialon and KSF are monopolized by Mitsubishi of Japan and GE of the United States respectively, and the degree of localization is low, which poses a risk of bottleneck.
[0005] Quantum Dot (QD), as one of the few new materials that my country has independent research and development capabilities, can help China surpass other new display industries. QD-LED (quantum dot chip packaging) directly packages quantum dot materials on LED blue light chips, and the chips emit light with higher energy to stimulate quantum dot materials to emit light to achieve color conversion and form the three primary colors of red, green and blue.
[0006] The quantum dot solution can achieve spectrum customization. It has a wide spectral range (400-700nm), a narrow half-peak width (<30nm), high absorption and high conversion of blue light, and lower material consumption than phosphors, which can effectively solve the various pain points of the phosphor solution.
[0007] However, since the quantum dots in QD-LEDs are in direct contact with the blue light LEDs, the effects of light and heat increase exponentially, and the requirements for the reliability of quantum dots are more stringent.
[0008] Therefore, there is an urgent need to provide a quantum dot chip with high reliability. Utility Model Content
[0009] The utility model provides a quantum dot chip structure to solve the problem of poor reliability of quantum dots in the prior art.
[0010] In order to solve the above technical problems, the utility model is implemented through the following technical solutions:
[0011] The utility model provides a quantum dot chip structure, which includes: a transparent substrate and a light-emitting unit; wherein:
[0012] The first surface of the transparent substrate is provided with at least one first pit; the first pit is recessed relative to the first surface of the transparent substrate;
[0013] The first recess is used to accommodate the light emitting unit, and the light emitting unit corresponds to the first recess one by one;
[0014] The light-emitting unit includes: a quantum dot layer and a chip distributed in sequence, and the quantum dot layer is close to the bottom of the first pit.
[0015] Optionally, the width of the first pit at a position for accommodating the chip is greater than the width of the first pit at a position for accommodating the quantum dot layer.
[0016] Optionally, along the depth direction from the bottom to the top of the first pit, at a position of the first pit for accommodating the quantum dot layer, a side wall of the first pit is inclined outward of the first pit.
[0017] Optionally, a first reflective layer is disposed on the first surface of the transparent substrate, and a reflective surface of the first reflective layer faces the transparent substrate.
[0018] Optionally, the first reflective layer does not cover the bottom of the first pit.
[0019] Optionally, the second surface of the transparent substrate is provided with at least one second pit; the second pit is recessed relative to the second surface of the transparent substrate;
[0020] The second surface of the transparent substrate is opposite to the first surface of the transparent substrate.
[0021] Optionally, a second reflective layer is provided on the second surface of the transparent substrate, and a reflective surface of the second reflective layer faces the transparent substrate;
[0022] The second reflective layer does not completely cover the second surface of the transparent substrate.
[0023] Optionally, the second reflective layer does not cover the second pit, and the second pit is staggered with the first pit.
[0024] Optionally, a sealing medium layer is provided on a side of the quantum dot layer adjacent to the chip.
[0025] Optionally, the transparent substrate is a glass substrate or an acrylic substrate.
[0026] Optionally, the quantum dot layer has one or more luminescent colors.
[0027] The quantum dot chip structure provided by the utility model processes the quantum dot structure (first pit) on the transparent substrate, and only needs to fill the quantum dots in the first pit, without printing, and is simple to manufacture, and avoids the difficulty of alignment and bonding process; the alignment effect is better, thereby improving the conversion efficiency of the quantum dots; in addition, the material performance of the transparent substrate is stable and not easy to age, which improves the reliability of the quantum dot chip. Furthermore, the chip is also located in the pit, which further improves the reliability of the quantum dot chip, and the surface of the transparent substrate is flatter, and the packaging is simple.
[0028] The quantum dot chip structure provided by the utility model has a quantum dot layer filled in the first pit, and the top surface of the quantum dot can isolate water and oxygen, that is, it is sealed all around, which solves the problem that the quantum dot is afraid of water and oxygen and further improves the reliability of the quantum dot chip.
[0029] In an optional scheme of the utility model, the first pit can be set to be wider at the position for accommodating the chip than at the position for accommodating the quantum dots. In addition, the top is wide and the bottom is narrow, that is, the position for accommodating the chip is wide. In this way, the chip can be slightly wider than the quantum dot layer, which can fully excite the quantum dots and achieve higher conversion efficiency.
[0030] In an optional solution of the utility model, the side wall of the first pit at the position for accommodating the quantum dot layer is arranged to be inclined outward of the first pit, that is, the side wall of the first pit at the light-emitting position of the light-emitting unit is inclined, thereby increasing the light coupling efficiency of the light-emitting unit to the transparent substrate.
[0031] In an optional solution of the present invention, a first reflective layer is provided on the first surface of the transparent substrate, which can reduce or prevent light from emitting from the first surface of the transparent substrate, thereby enhancing the light intensity emitted from the second surface of the transparent substrate.
[0032] In an optional solution of the utility model, a second pit is provided on the second surface of the transparent substrate. The design of the second pit makes the second surface no longer a flat surface. Compared with the flat surface, the area is increased, that is, the design of the second pit increases the light emitting area of the transparent substrate, that is, increases the light emitting area of the chip structure.
[0033] In an optional solution of the utility model, a second reflective layer is provided on the second surface of the transparent substrate, and the second reflective layer does not completely cover the second surface. The design of the second reflective layer allows the light irradiated to the second reflective layer to be reflected and then emitted, thereby increasing the light emission angle.
[0034] Furthermore, the second reflective layer may be a special reflective layer, and a suitable reflective layer may be designed as required to filter out unnecessary light. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0036] Figure 1 A schematic diagram of a quantum dot chip structure according to an embodiment of the present invention;
[0037] Figure 2 A schematic diagram of a quantum dot chip structure of a preferred embodiment of the utility model;
[0038] Figure 3 A schematic diagram of a quantum dot chip structure of a preferred embodiment of the utility model;
[0039] Figure 4 A schematic diagram of a transparent substrate of a preferred embodiment of the utility model;
[0040] Figure 5 A schematic diagram of a transparent substrate of a preferred embodiment of the utility model;
[0041] Figure 6 A schematic diagram of a transparent substrate of a preferred embodiment of the utility model;
[0042] Figure 7 A schematic diagram of a transparent substrate of a preferred embodiment of the utility model;
[0043] Figure 8 A schematic diagram of a transparent substrate of a preferred embodiment of the utility model;
[0044] Description of reference numerals:
[0045] 1-Transparent substrate,
[0046] 101-side 1,
[0047] 1011 - first pit;
[0048] 102-side 2,
[0049] 1021 - second pit;
[0050] 2- Quantum dot layer,
[0051] 3- Chip,
[0052] 4- Insulation layer,
[0053] 5- Sealing medium layer,
[0054] 6- first reflective layer,
[0055] 7- Second reflective layer,
[0056] 701-Light-transmitting hole. DETAILED DESCRIPTION
[0057] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0058] In the description of the utility model specification, it is necessary to understand that the orientation or position relationship indicated by the terms "upper part", "lower part", "upper end", "lower end", "lower surface", "upper surface", etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the utility model.
[0059] In the description of the utility model specification, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.
[0060] In the description of the present invention, "plurality" means multiple, such as two, three, four, etc., unless otherwise clearly and specifically defined.
[0061] In the description of the utility model specification, unless otherwise clearly specified and limited, the term "connection" and other terms should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the utility model can be understood according to specific circumstances.
[0062] The following specific embodiments are used to describe the technical solution of the utility model in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.
[0063] In one embodiment, a quantum dot chip structure is provided, which includes: a transparent substrate 1, a light emitting unit, please refer to Figure 1 . The first surface 101 of the transparent substrate 1 is provided with at least one first pit 1011; the first pit 1011 is used to accommodate the light-emitting unit and corresponds to the light-emitting unit one by one. The light-emitting unit includes: a quantum dot layer 2 and a chip 3 distributed in sequence, the quantum dot layer 2 is close to the bottom of the first pit 1011, and the chip 3 is close to the top of the first pit 1011, that is, the chip 3 is attached to the quantum dot layer 2, that is, the light-emitting surface of the light-emitting unit faces the second surface 102 of the transparent substrate opposite to the first 101.
[0064] It should be noted that the linear filling of each module in the figure is only to distinguish different structures and does not represent its structural form. The figure only illustrates the position relationship. In actual production, the chip 3 may not be exactly consistent with the first pit 1011; the thickness of each layer in the figure (such as chip, quantum dot layer, etc.) is also only an example. In actual production, it may not be in accordance with the thickness ratio shown in the figure.
[0065] Implementably, the quantum dot layer 2 may include a plurality of quantum dots filled in the first pits 1011 .
[0066] Practically, the transparent substrate may be a glass substrate.
[0067] It should be noted that the transparent substrate may also be made of other materials, such as acrylic substrate, etc. Preferably, a material with good light transmission effect and stable material performance can be selected.
[0068] When packaging the chip, it is generally necessary to set an insulating layer 4 on the surface of the chip (which can be coated with glue, etc.) Figure 2 The insulating layer can not only play an insulating role, but also flatten the surface of the chip. In the above embodiment, since the chip is also placed in the first pit, the surface of the transparent substrate is already very flat. When the first surface of the transparent substrate is insulated and flattened, fewer insulating layers are required because the insulating layer (usually glue) is prone to aging. Therefore, the less glue is used, the more stable the structure is.
[0069] It should be noted that the chip 3 is also accommodated in the first pit 1011. The chip can be entirely accommodated in the first pit, or partially accommodated in the first pit. For example, the interconnection points of the chip can leak out of the first pit to facilitate the interconnection between different chips. In addition, the main structure of the chip can be partially accommodated in the first pit. Although only a part of it is accommodated in the first pit, compared with the technology in which the entire chip is on the substrate, the exposed part of the chip is still reduced, and the glue layer used in the packaging flattening process is definitely reduced.
[0070] Preferably, the depth of the pit can be set to just accommodate the chip, so that the chip is substantially flush with the transparent substrate after being placed in the pit. Figure 1 When the first surface of the transparent substrate is insulated and planarized, there will be less insulating layer in the first pit, and thus less insulating layer will be required.
[0071] In one embodiment, a sealing medium layer 5 is provided on one side of the quantum dot layer adjacent to the chip, that is, the light-emitting unit includes: a quantum dot layer, a sealing medium layer, and a chip distributed in sequence, please refer to Figure 3 Although water and oxygen isolation can be formed on the top of the quantum dot layer, the design of the sealing medium layer 5 can further isolate and seal, and can further improve the reliability of the quantum dot chip.
[0072] In one embodiment, the chip can be bonded onto the quantum dot layer via a glue bonding layer.
[0073] Preferably, the light-emitting unit comprises: a quantum dot layer, a sealing medium layer, a glue bonding layer and a chip distributed in sequence.
[0074] Practically, the sealing medium layer can be made of materials such as SIN, ALN, etc., and the glue bonding layer can be made of resin materials such as silicone or epoxy glue. Further, the sealing medium layer and the glue bonding layer can be set to have a transmittance greater than 95% in the blue light band of 440nm-475nm.
[0075] In one embodiment, the first pit can be set to have a width greater than that for accommodating the position of the chip, that is, wide at the top and narrow at the bottom. This allows the chip to be slightly wider than the quantum dot layer, and the chip can more fully excite the quantum dot layer, further improving the conversion efficiency of the quantum dots.
[0076] It should be understood that the above-mentioned wide top and narrow bottom are only a preferred example. In different embodiments, the first concave pit may not be set as a structure with a wide top and a narrow bottom, for example, it may also be the same width at the top and bottom, please refer to Figure 1 , and can even be a structure with a narrow top and a wide bottom.
[0077] In one embodiment, the first pit can be configured such that: along the depth direction from the bottom to the top of the first pit, that is, from bottom to top in the figure, the side wall for accommodating the quantum dot layer is inclined outward from the first pit. If the side wall is vertical, the light emitted to the side by the quantum dot layer is equivalent to entering the transparent substrate in parallel, that is, the light is parallel to the light emitting surface (second surface) of the transparent substrate, then this part of the light is wasted, and basically no light will be emitted from the second surface; by setting the side wall of the first pit to be inclined, the light emitted to the side by the quantum dot layer is no longer parallel to enter the transparent substrate, thereby improving the light coupling efficiency of the light emitted by the quantum dot layer into the transparent substrate.
[0078] It can be implemented that along the depth direction of the first pit, the cross section of the first pit 1011 can be an inverted trapezoid, please refer to Figure 4 . As long as the cross-section of the middle axis along the depth direction of the first pit is an inverted trapezoid, there is no restriction on the entire shape of the first pit, and its sidewalls may include three sides, four sides, five sides, etc., or may be an entire curved surface. The first pit is set to be an inverted trapezoid, which not only realizes that the width at the chip position is greater than the width at the quantum dot layer position, but also realizes the inclination of the sidewall at the quantum dot layer position; and the inverted trapezoidal pit is made into a structure that is wide at the top and narrow at the bottom, which is easier to make than a vertical pit.
[0079] It should be understood that the above-mentioned inverted trapezoid not only realizes that the width at the chip position is greater than the width at the quantum dot layer position, but also realizes the inclination of the sidewall at the quantum dot layer position. The side of the above-mentioned inverted trapezoid is a straight line. In different embodiments, the side of the cross section of the pit can also be an inclined curve, such as: the first pit is bowl-shaped or only the sidewall at the quantum dot layer position is an inclined sidewall, and the chip position can be a vertical sidewall with a larger width, etc. The above example can not only realize that the width at the chip position is greater than the width at the quantum dot layer position, but also realize the inclination of the sidewall at the quantum dot layer position.
[0080] In addition, in different embodiments, it is also possible to achieve that only the width at the chip position is greater than the width at the quantum dot layer position, such as: a step-wise narrowing form can be adopted from the top to the bottom of the first pit; it is also possible to achieve only the side wall inclination at the quantum dot layer position, which will not be repeated here.
[0081] Preferably, the inclination angle θ of the side surface of the inverted trapezoid may be greater than or equal to 30 degrees.
[0082] In one embodiment, the first surface 101 of the transparent substrate 1 may be provided with a first reflective layer 6, see Figure 5 The reflective surface of the first reflective layer faces the transparent substrate. The design of the first reflective layer can prevent light leakage from the first surface of the transparent substrate, thereby enhancing the light intensity of the light emitting surface.
[0083] In one embodiment, the first reflective layer may not cover the first pit, that is, the first reflective layer does not cover the bottom of the first pit, nor does it cover the sidewalls of the first pit. The top surface of the pit is blocked by the chip, and almost no light escapes, so no reflection is required.
[0084] Practically, a first reflective layer may be provided on the first surface of the transparent substrate, and then a first pit may be made, so that the first reflective layer at the position of the first pit is also removed, which is simple to manufacture and also forms no obstruction.
[0085] In another embodiment, a first reflective layer may also be provided on the side wall of the first pit, that is, the first reflective layer may block the side wall of the first pit but does not block the bottom of the first pit, so that the light emitted from the side wall of the first pit may also be reflected, further avoiding waste of light.
[0086] In one embodiment, the second surface 102 of the transparent substrate 1 opposite to the first surface 101 is provided with a second recess 1021, see Figure 5 After the second pit 1021 is provided, the second surface 102 is no longer a flat surface. Compared with a flat surface, the area of the uneven surface is definitely larger, thereby increasing the light emitting area of the transparent substrate.
[0087] In one embodiment, along the depth direction of the second pit, the cross section of the second pit may also be an inverted trapezoid, please refer to Figure 6 Not only the light output area is increased, but also the side surface of the second recess is inclined, so the light output effect is better.
[0088] Of course, it is understandable that no matter what shape the second concave is designed to be, the light emitting area is larger than when the second concave is not designed (i.e. the second surface is a flat surface). In order to achieve a larger light emitting area and a better light emitting effect, the second concave can also be set in other multi-faceted pyramid shapes to form more light emitting surfaces.
[0089] In one embodiment, a second reflective layer 7 is disposed on the second surface of the transparent substrate. Figure 7 The reflective surface of the second reflective layer faces the transparent substrate, and the second reflective layer does not completely cover the second surface. The design of the second reflective layer can form reflection and then emit light, which can increase the light output angle.
[0090] In one embodiment, the second reflective layer does not completely cover the second surface, which is manifested as: the second reflective layer does not cover the second pit; further, along the thickness direction of the transparent substrate, the second pit and the first pit are staggered. Figure 7 When the second pit is staggered with the first pit, it is equivalent to having a second reflective layer at the central projection position of the first pit, and the central light intensity of the light emitted by the light-emitting unit is the strongest. The second emission layer blocks the emission position of the central light intensity, and the second reflective layer reflects most of the light and then emits it, thereby increasing the emission angle of most of the light.
[0091] The staggered distribution of the second pit and the first pit can be understood as: staggered a part, please refer to Figure 6 , the second pit is partially offset from the first pit, but not completely offset, and the projections of the second pit and the first pit partially overlap along the thickness direction of the transparent substrate. The offset distribution can also be understood as: completely offset, that is, along the thickness direction of the transparent substrate, the projections of the second pit and the first pit do not overlap at all.
[0092] In one embodiment, when the second surface of the transparent substrate is not provided with the second pit, a second reflective layer 7 may also be provided. Figure 8 In order to ensure the light emitting effect of the second surface of the transparent substrate, the second reflective layer does not completely cover the second surface of the transparent substrate.
[0093] Practically, the second reflective layer may include: a plurality of light-transmitting holes 701 to achieve an incomplete shielding effect.
[0094] Preferably, the plurality of light-transmitting holes on the second reflective layer may be staggered with respect to the center of the first concave pit. Figure 8 When a plurality of holes are staggered with the center of the first pit, it is equivalent to having a second reflective layer at the central projection position of the first pit, and the central light intensity of the light emitted by the light-emitting unit is the strongest. The second emission layer blocks the emission position of the central light intensity. The second reflective layer reflects most of the light and then emits it, thereby increasing the emission angle of most of the light.
[0095] In one embodiment, the second reflective layer can be a special reflective layer, that is, it can filter light, filter out unnecessary light, and transmit necessary light. For example, a special reflective layer that filters blue light can be used to filter out blue light; different choices can be made for the transmitted light according to needs, such as only green light, only red light, only yellow light, or multiple colors (green light, red light, and yellow light) can be transmitted. In this case, the second reflective layer can not only increase the light output angle, but also filter light.
[0096] In the above embodiment, the first reflective layer and the second reflective layer are not necessarily fully reflective, and may have a certain transmittance, such as 50%, 60%, etc., and different selections can be made according to needs.
[0097] In one embodiment, the luminous colors of the quantum dot layer may include one or more. A quantum dot layer including only one luminous color may be: a red light quantum dot layer, a green light quantum dot layer, or a yellow light quantum dot layer, etc. A quantum dot layer including multiple luminous colors may include: a red light quantum dot layer and a green light quantum dot layer at the same time; or may include: a red light quantum dot layer, a green light quantum dot layer, a blue light quantum dot layer, etc. at the same time.
[0098] When the quantum dot layer emits multiple colors, the quantum dot layers with multiple colors may be distributed in one first pit or in multiple first pits.
[0099] The quantum dot chip structure in the above embodiment can be applied to direct display, lighting, and backlight.
[0100] In one embodiment, the chips in different first pits can be interconnected to form a high-voltage chip, such as a voltage of 12V, which reduces the voltage difference between input and output, improves the conversion efficiency from AC to DC, and thereby reduces the cost and weight of the system.
[0101] In the description of this specification, the description with reference to the terms "an implementation", "an example", "a specific implementation process", "an example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.
Claims
1. A quantum dot chip structure, characterized in that: include: A transparent substrate and a light-emitting unit; wherein: The first surface of the transparent substrate is provided with at least one first pit; the first pit is recessed relative to the first surface of the transparent substrate; The first recess is used to accommodate the light emitting unit, and the light emitting unit corresponds to the first recess one by one; The light-emitting unit includes: a quantum dot layer and a chip distributed in sequence, and the quantum dot layer is close to the bottom of the first pit.
2. The quantum dot chip structure according to claim 1, characterized in that: The width of the first pit at a position for accommodating the chip is greater than the width of the first pit at a position for accommodating the quantum dot layer.
3. The quantum dot chip structure according to claim 1, characterized in that: Along the depth direction from the bottom to the top of the first pit, at the position of the first pit for accommodating the quantum dot layer, the side wall of the first pit is inclined outward of the first pit.
4. The quantum dot chip structure according to claim 1, characterized in that: A first reflective layer is disposed on the first surface of the transparent substrate, and a reflective surface of the first reflective layer faces the transparent substrate.
5. The quantum dot chip structure according to claim 4, characterized in that: The first reflective layer does not cover the bottom of the first pit.
6. The quantum dot chip structure according to claim 1, characterized in that: The second surface of the transparent substrate is provided with at least one second pit; the second pit is recessed relative to the second surface of the transparent substrate; The second surface of the transparent substrate is opposite to the first surface of the transparent substrate.
7. The quantum dot chip structure according to claim 6, characterized in that: A second reflective layer is disposed on the second surface of the transparent substrate, and a reflective surface of the second reflective layer faces the transparent substrate; The second reflective layer does not completely cover the second surface of the transparent substrate.
8. The quantum dot chip structure according to claim 7, characterized in that: The second reflective layer does not cover the second pit, and the second pit is staggered with the first pit.
9. The quantum dot chip structure according to claim 1, characterized in that: A sealing medium layer is provided on one side of the quantum dot layer adjacent to the chip.
10. The quantum dot chip structure according to any one of claims 1 to 9, characterized in that: The transparent substrate is a glass substrate or an acrylic substrate.
11. The quantum dot chip structure according to any one of claims 1 to 9, characterized in that: The quantum dot layer has one or more luminescent colors.