Semiconductor process chamber and semiconductor process equipment

Abstract

The utility model provides a semiconductor process chamber and semiconductor process equipment, the semiconductor process chamber comprises a chamber body, a dielectric window, a radio frequency coil, a first distance measuring part and an adjusting assembly, the dielectric window is arranged at the top of the chamber body; the radio frequency coil is arranged outside the cavity body and is positioned above the dielectric window; the first distance measuring part is matched with the radio frequency coil, is arranged towards the dielectric window and is used for detecting a first distance between a plurality of positions between the radio frequency coil and the dielectric window; and the adjusting assembly is matched with the radio frequency coil and is used for adjusting the parallelism of the radio frequency coil and the dielectric window according to the first distance. According to the semiconductor process chamber and the semiconductor process equipment provided by the utility model, the parallelism of the electrostatic chuck and the radio frequency coil can be detected and adjusted, so that the parallelism of the electrostatic chuck and the radio frequency coil can be improved, and the etching uniformity of a wafer can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] An existing semiconductor process chamber may include a chamber body, a radio frequency coil and an electrostatic chuck (ESC), wherein the radio frequency coil is arranged outside the top of the chamber body, and the electrostatic chuck is arranged inside the chamber body. In the semiconductor process, the electrostatic chuck carries a wafer, and a process gas is introduced into the chamber body. The process gas is ionized to form plasma under the action of the radio frequency coil, and the plasma reacts physically and chemically with the wafer, thereby realizing the etching process of the wafer.

[0003] However, in the prior art, due to factors such as the fixed reference of the electrostatic chuck and the RF coil, the number of fixed adapters, processing errors, and assembly processes, the parallelism of the electrostatic chuck and the RF coil is poor. In addition, in the prior art, due to the structure of the process chamber, the RF coil is arranged outside the chamber body, and the electrostatic chuck is arranged inside the chamber body, which makes it impossible to detect and adjust the parallelism of the electrostatic chuck and the RF coil, thereby causing poor etching uniformity of the wafer. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber and a semiconductor process equipment, which can detect and adjust the parallelism of the electrostatic chuck and the radio frequency coil, thereby improving the parallelism of the electrostatic chuck and the radio frequency coil, and further improving the etching uniformity of the wafer.

[0005] In order to achieve the purpose of the utility model, a semiconductor process chamber is provided, comprising a chamber body, a dielectric window, a radio frequency coil, a first distance measuring component and an adjustment component.

[0006] The medium window is arranged on the top of the chamber body;

[0007] The radio frequency coil is arranged outside the chamber body and above the dielectric window;

[0008] The first distance measuring component cooperates with the radio frequency coil and is disposed toward the dielectric window, and is used to detect a first distance between a plurality of positions of the radio frequency coil and the dielectric window;

[0009] The adjustment component is arranged in cooperation with the radio frequency coil, and is used to adjust the parallelism between the radio frequency coil and the dielectric window according to the first distance.

[0010] Optionally, there are multiple first ranging components, which are spaced apart in a circumferential direction coaxial with the RF coil and are all arranged corresponding to the upper surface of the dielectric window, so as to detect the distances between the RF coil and multiple positions on the upper surface of the dielectric window in a one-to-one correspondence as multiple first distances.

[0011] Optionally, the semiconductor process chamber further comprises a first bracket and a plurality of bracket seats, the plurality of bracket seats surround the dielectric window, the first bracket is arranged on the top of the plurality of bracket seats and is located above the dielectric window, and the radio frequency coil is arranged at the bottom of the first bracket and is located above the dielectric window;

[0012] A plurality of first distance measuring components are arranged on the first bracket at intervals along the circumferential direction of the first bracket, and are used to detect distances at a plurality of positions between the first bracket and the upper surface of the dielectric window as a plurality of first distances.

[0013] Optionally, the first bracket is provided with a plurality of first threaded holes, the first distance measuring component has a first external thread, the plurality of first threaded holes are arranged at intervals along the circumference of the first bracket, and the plurality of first distance measuring components are assembled through one-to-one threaded matching of the first external thread and the plurality of first threaded holes.

[0014] Optionally, the semiconductor process chamber further comprises a second bracket, the second bracket is arranged in a ring shape on the top of the chamber body, and the dielectric window is arranged on the top of the second bracket;

[0015] The adjustment assembly includes at least one adjustment component, which is arranged in cooperation with at least one of the multiple bracket seats and is arranged in cooperation with the second bracket, and is used to adjust the distance between the first bracket and the dielectric window at multiple positions by adjusting the distance between the matching bracket seat and the second bracket, so as to adjust the first distance between the radio frequency coil and the dielectric window at multiple positions.

[0016] Optionally, the bracket seat is provided with an adjustment threaded hole, the adjustment component has an adjustment external thread, and the second bracket is provided with an adjustment blind hole, the adjustment blind hole corresponds one-to-one with the adjustment threaded hole of the bracket seat, the adjustment external thread of the adjustment component is threadably matched with the adjustment threaded hole, and the end of the adjustment component is against the bottom of the adjustment blind hole.

[0017] Optionally, the semiconductor process chamber further includes a carrying component and a second distance measuring component.

[0018] The carrying component is arranged in the chamber body and is used for carrying the wafer.

[0019] The second distance measuring component cooperates with the bearing component and is disposed toward the dielectric window, and is used to detect a second distance between a plurality of positions of the bearing component and the dielectric window;

[0020] The adjusting component is used to adjust the parallelism between the RF coil and the carrying component according to the first distance and the second distance.

[0021] Optionally, there are multiple second ranging components, which are spaced apart in the circumferential direction coaxial with the supporting component and are all arranged corresponding to the lower surface of the dielectric window, for detecting the distances between the supporting component and multiple positions of the lower surface of the dielectric window in a one-to-one manner as multiple second distances.

[0022] Optionally, there are multiple first distance measuring components, which are spaced apart in a circumferential direction coaxial with the radio frequency coil and are all arranged corresponding to the upper surface of the dielectric window, and are used to detect the distances between the radio frequency coil and multiple positions on the upper surface of the dielectric window in a one-to-one correspondence as multiple first distances;

[0023] The plurality of first ranging components and the plurality of second ranging components are divided into a plurality of ranging groups, each of the ranging groups includes at least one first ranging component and at least one second ranging component, the first ranging components and the second ranging components of the same ranging group are within a radius of the dielectric window and are located in a direction parallel to the radial direction of the dielectric window, and the plurality of ranging groups are spaced apart in a plurality of directions parallel to a plurality of radial directions of the dielectric window in a one-to-one correspondence.

[0024] Optionally, the bearing component is provided with a plurality of second threaded holes, the second distance measuring component has a second external thread, the plurality of second threaded holes are arranged at intervals along the circumference of the bearing component, and the plurality of second distance measuring components are assembled through one-to-one threaded matching of the second external thread and the plurality of second threaded holes.

[0025] The utility model also provides a semiconductor process equipment, including a computing circuit and a semiconductor process chamber as provided by the utility model.

[0026] The operation circuit is electrically connected to the first distance measuring component and the second distance measuring component respectively, and is used to calculate a proportional electrical signal representing a spacing ratio of the first spacing and the second spacing corresponding to the first spacing based on basic electrical signals generated by multiple first spacings and multiple second spacings, and the multiple spacing ratios are used to represent the parallelism of the radio frequency coil and the supporting component.

[0027] Optionally, the operation circuit includes an exponential operation subcircuit, a differential ratio operation subcircuit and two logarithmic operation subcircuits.

[0028] The two logarithmic operation subcircuits are electrically connected to the first distance measuring component and the second distance measuring component in a one-to-one correspondence, and are used to convert the first basic electrical signal generated by the first distance and the second basic electrical signal generated by the second distance into a first logarithm and a second logarithm, respectively.

[0029] The differential ratio operation subcircuit is electrically connected to the two logarithmic operation subcircuits respectively, and is used to output the difference between the first logarithm and the second logarithm.

[0030] The exponential operation subcircuit is electrically connected to the differential proportional operation subcircuit and is used to output the proportional electrical signal.

[0031] Optionally, the semiconductor process equipment further includes a display circuit, which is electrically connected to the operation circuit and is used to display the spacing ratio according to the proportional electrical signal.

[0032] Optionally, the display circuit includes a counting module, a driving module and a display module. The counting module is electrically connected to the operation circuit and is used to count the number of pulses generated by the proportional electrical signal input. The driving module is electrically connected to the counting module and the display module, respectively, and is used to send a driving signal to the display module according to the counting result of the counting module. The display module is used to display the spacing ratio according to the driving signal.

[0033] The utility model has the following beneficial effects:

[0034] The semiconductor process chamber provided by the utility model can detect the first distances at multiple positions between the radio frequency coil and the dielectric window by means of a first distance measuring component, and can adjust the parallelism of the radio frequency coil and the dielectric window according to the first distance by means of an adjustment component coordinated with the radio frequency coil, so that the dielectric window can be used as a detection reference and an adjustment reference for the parallelism of the radio frequency coil arranged outside the chamber body and the bearing component arranged inside the chamber body, so that the detection reference and the adjustment reference for the parallelism of the radio frequency coil and the bearing component can be unified, and then the parallelism of the electrostatic chuck and the radio frequency coil can be detected and adjusted, and then the parallelism of the electrostatic chuck and the radio frequency coil can be improved, and then the etching uniformity of the wafer can be improved.

[0035] The semiconductor process equipment provided by the utility model is electrically connected to the first distance measuring component and the second distance measuring component of the semiconductor process chamber provided by the utility model by setting an operation circuit. The operation circuit can calculate a proportional electrical signal representing the spacing ratio of the first spacing and the second spacing corresponding to the first spacing according to the basic electrical signals generated by the plurality of first spacings and the plurality of second spacings. The plurality of spacing ratios are used to represent the parallelism of the radio frequency coil and the bearing component, so that the dielectric window can be used as a detection reference and an adjustment reference for the parallelism of the radio frequency coil arranged outside the chamber body and the bearing component arranged inside the chamber body, so that the detection reference and the adjustment reference for the parallelism of the radio frequency coil and the bearing component can be unified, and then the parallelism of the electrostatic chuck and the radio frequency coil can be detected and adjusted, and then the parallelism of the electrostatic chuck and the radio frequency coil can be improved, and then the etching uniformity of the wafer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A schematic diagram of a front and cross-sectional structure of a semiconductor process chamber and a semiconductor process equipment provided by an embodiment of the utility model;

[0037] Figure 2 A schematic diagram of a top view of a semiconductor process chamber and a semiconductor process equipment provided by an embodiment of the utility model;

[0038] Figure 3 A schematic diagram of the structure of a distance measuring component provided in an embodiment of the utility model;

[0039] Figure 4 A schematic diagram of a partial structure of a semiconductor process chamber provided by an embodiment of the utility model;

[0040] Figure 5 for Figure 4 A schematic diagram of a local enlarged structure;

[0041] Figure 6 A schematic diagram of the three-dimensional structure of the bracket seat provided in the embodiment of the utility model;

[0042] Figure 7 A schematic diagram of a half-section structure of a bracket seat provided in an embodiment of the utility model;

[0043] Figure 8 A schematic diagram of the structure of the computing circuit provided by the embodiment of the utility model;

[0044] Fig. 9 A schematic diagram of the structure of a display circuit provided by an embodiment of the utility model;

[0045] Description of reference numerals:

[0046] 11-chamber body; 12-dielectric window; 13-RF coil; 14-carrying component; 151-first distance measuring component; 152-second distance measuring component; 16-adjusting component; 17-second bracket; 18-first bracket; 181-third assembly screw; 19-bracket seat; 191-adjusting threaded hole; 192-first assembly screw; 193-first assembly threaded hole; 194-avoidance groove; 21-operation circuit; 211-exponential operation subcircuit; 212-differential ratio operation subcircuit; 213-logarithmic operation subcircuit; 22-display circuit; 221-counting module; 222-driving module; 223-display module; 23-cantilever; 231-second assembly screw. DETAILED DESCRIPTION

[0047] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor process chamber and semiconductor process equipment provided by the present invention are described in detail below in conjunction with the accompanying drawings.

[0048] like Figure 1 and Figure 2 As shown, an embodiment of the utility model provides a semiconductor process chamber, including a chamber body 11, a dielectric window 12, a radio frequency coil 13, a first distance measuring component 151 and an adjustment component, wherein the dielectric window 12 is arranged on the top of the chamber body 11; the radio frequency coil 13 is arranged outside the chamber body 11 and above the dielectric window 12; the first distance measuring component 151 cooperates with the radio frequency coil 13 and is arranged toward the dielectric window 12, and is used to detect a first distance between the radio frequency coil 13 and a plurality of positions of the dielectric window 12; the adjustment component cooperates with the radio frequency coil 13 and is used to adjust the parallelism of the radio frequency coil 13 and the dielectric window 12 according to the first distance.

[0049] The semiconductor process chamber provided by the embodiment of the utility model can detect the first distances between the RF coil 13 and the dielectric window 12 at multiple positions by setting a first distance measuring component 151 to cooperate with the RF coil 13 and face the dielectric window 12. By setting an adjustment component to cooperate with the RF coil 13, the parallelism of the RF coil 13 and the dielectric window 12 can be adjusted according to the first distance by means of the adjustment component, so that the dielectric window 12 can be used as a detection reference and an adjustment reference for the parallelism of the RF coil 13 arranged outside the chamber body 11 and the bearing component 14 arranged inside the chamber body 11, so that the detection reference and the adjustment reference for the parallelism of the RF coil 13 and the bearing component 14 can be unified, and then the parallelism of the electrostatic chuck and the RF coil 13 can be detected and adjusted, and then the parallelism of the electrostatic chuck and the RF coil 13 can be improved, and then the etching uniformity of the wafer can be improved.

[0050] In practical applications, the first distances at multiple positions between the RF coil 13 and the dielectric window 12 detected by the first ranging component 151 can represent the parallelism between the RF coil 13 and the dielectric window 12. The adjustment component can adjust the first distances at multiple positions between the RF coil 13 and the dielectric window 12 according to the first distances at multiple positions (or the parallelism between the RF coil 13 and the dielectric window 12), thereby adjusting the parallelism between the RF coil 13 and the dielectric window 12.

[0051] Optionally, the dielectric window 12 may include a ceramic window.

[0052] like Figure 1 and Figure 2 As shown, in one embodiment of the utility model, the semiconductor process chamber may further include a first bracket 18, a second bracket 17 and a plurality of bracket seats 19, the plurality of bracket seats 19 surround the dielectric window 12, the first bracket 18 is arranged on the top of the plurality of bracket seats 19 and is located above the dielectric window 12, the RF coil 13 is arranged at the bottom of the first bracket 18 and is located above the dielectric window 12; the second bracket 17 is arranged in an annular shape on the top of the chamber body 11, and the dielectric window 12 is arranged on the top of the second bracket 17.

[0053] Specifically, the second bracket 17, the plurality of bracket seats 19 and the first bracket 18 are sequentially arranged on the top of the chamber body 11, the dielectric window 12 is arranged on the top of the second bracket 17 and covers the top of the chamber body 11, and the space between the dielectric window 12, the second bracket 17 and the chamber body 11 is inside the chamber body 11. The bearing component 14 is arranged inside the chamber body 11 for carrying the wafer. Optionally, the semiconductor process chamber may further include a cantilever 23, the cantilever 23 is arranged inside the chamber body 11 and connected to the peripheral wall of the chamber body 11, and the bearing component 14 is arranged on the cantilever 23, that is, the bearing component 14 can be assembled inside the chamber body 11 through the cantilever 23. The RF coil 13, the first bracket 18 and the plurality of bracket seats 19 are all arranged outside the top of the chamber body 11, and the RF coil 13 is sequentially assembled outside the top of the chamber body 11 through the first bracket 18, the plurality of bracket seats 19 and the second bracket 17.

[0054] In this case where the RF coil 13 is arranged outside the chamber body 11 and assembled with the chamber body 11, and the supporting component 14 is arranged inside the chamber body 11 and assembled with the chamber body 11, since the RF coil 13 is assembled with the chamber body 11 through intermediate adapters such as the first bracket 18, the plurality of bracket seats 19, and the second bracket 17, and the supporting component 14 is assembled with the chamber body 11 through intermediate adapters such as the cantilever 23, the processing errors of the RF coil 13 itself and the intermediate adapters such as the first bracket 18, the plurality of bracket seats 19, and the second bracket 17 are affected. , assembly process and other factors, as well as the processing errors of the supporting component 14 itself and the intermediate adapters such as the cantilever 23, and the assembly process and other factors, after the RF coil 13 and the supporting component 14 are assembled with the chamber body 11, the parallelism of the RF coil 13 and the supporting component 14 is inevitably poor. In addition, since the RF coil 13 and the supporting component 14 are separated by the dielectric window 12 and are respectively located outside and inside the chamber body 11, therefore, in the prior art, it is impossible to detect and adjust the parallelism of the supporting component 14 and the RF coil 13, resulting in poor etching uniformity of the wafer.

[0055] The semiconductor process chamber provided by the embodiment of the utility model uses the dielectric window 12 as the detection reference and adjustment reference of the parallelism of the RF coil 13 arranged outside the chamber body 11 and the supporting component 14 arranged inside the chamber body 11, so that the detection reference and adjustment reference of the parallelism of the RF coil 13 arranged outside the chamber body 11 and the supporting component 14 arranged inside the chamber body 11 can be unified. By arranging a first distance measuring component 151 to cooperate with the RF coil 13 and face the dielectric window 12, the first distance measuring component 151 can be used to detect the first spacing between the RF coil 13 and the dielectric window 12 at multiple positions, and the first spacing at multiple positions can represent the parallelism of the RF coil 13 and the dielectric window 12. By arranging an adjustment component to cooperate with the RF coil 13, the adjustment component can be used to adjust the parallelism of the RF coil 13 and the dielectric window 12 according to the first spacing, so that the parallelism of the electrostatic chuck and the RF coil 13 can be detected and adjusted, and then the parallelism of the electrostatic chuck and the RF coil 13 can be improved, and then the etching uniformity of the wafer can be improved.

[0056] like Figure 2 As shown, optionally, the first bracket 18 and the bracket seat 19 can be connected by a first assembly screw 192.

[0057] like Figure 2 and Figure 6 As shown, specifically, the bracket seat 19 can be provided with a first assembly threaded hole 193, the first bracket 18 can be provided with a first assembly through hole, and the first assembly screw 192 can be passed through the first assembly through hole and threadedly connected with the first assembly screw 192 to connect the first bracket 18 with the bracket seat 19.

[0058] Optionally, the bracket seat 19 may be provided with a plurality of first assembly threaded holes 193 at intervals. In this way, the first bracket 18 and the bracket seat 19 may be connected by a plurality of first assembly screws 192 to improve the stability of the connection. Figure 6 As shown, the bracket seat 19 may be provided with two first assembly threaded holes 193 at intervals.

[0059] like Figure 1 As shown, optionally, the cantilever 23 and the peripheral wall of the chamber body 11 can be connected by a second assembly screw 231.

[0060] Specifically, the cantilever 23 can be provided with a second assembly threaded hole, and the peripheral wall of the chamber body 11 can be provided with a second assembly through hole. The second assembly screw 231 can pass through the second assembly through hole and be threadedly connected with the second assembly screw 231 to connect the cantilever 23 with the peripheral wall of the chamber body 11.

[0061] like Figure 2 As shown, optionally, the RF coil 13 and the first bracket 18 may be connected by a third assembly screw 181 .

[0062] like Figure 1-Figure 3 As shown, in one embodiment of the present invention, the number of the first ranging components 151 can be multiple, and the multiple first ranging components 151 are spaced apart in the circumferential direction coaxial with the RF coil 13, and are all arranged corresponding to the upper surface of the dielectric window 12, so as to detect the distances between the RF coil 13 and the upper surface of the dielectric window 12 at multiple positions one by one as multiple first distances.

[0063] For example, optional, such as Figure 1 and Figure 3 As shown, the number of the first ranging components 151 can be four, and the four first ranging components 151 can be numbered A1, B1, C1 and D1 respectively. The four first ranging components 151 numbered A1, B1, C1 and D1 are used to detect the distances between the RF coil 13 and the upper surface of the dielectric window 12 at four positions in a one-to-one correspondence as four first distances.

[0064] Optionally, the first distance measuring component 151 may include a first laser distance measuring sensor. The first laser distance measuring sensor may emit a laser beam downward to reach the upper surface of the dielectric window 12. After the laser beam reaches the upper surface of the dielectric window 12, part of the laser beam may be scattered back to the receiver of the first laser distance measuring sensor and received by the receiver. The timer of the first laser distance measuring sensor may calculate the distance between the emission position of the laser beam and the target position (i.e., the distance between the RF coil 13 and the upper surface of the dielectric window 12) by measuring the time from the emission to the reception of the laser beam.

[0065] like Figure 1 , Figure 2 and Figure 4 As shown, in one embodiment of the present invention, a plurality of first distance measuring components 151 may be arranged on the first bracket 18 at intervals along the circumference of the first bracket 18 to detect the distances between the first bracket 18 and the upper surface of the dielectric window 12 at a plurality of positions as a plurality of first distances.

[0066] By detecting the spacings at multiple positions between the first bracket 18 and the upper surface of the dielectric window 12 as multiple first spacings, the parallelism between the first bracket 18 and the upper surface of the dielectric window 12 can be obtained, and thus the parallelism between the first bracket 18 and the dielectric window 12 can be obtained. Since the RF coil 13 is arranged at the bottom of the first bracket 18, the parallelism between the first bracket 18 and the dielectric window 12 can represent the parallelism between the RF coil 13 and the dielectric window 12. By arranging multiple first distance measuring components 151 on the first bracket 18, the assembly of the multiple first distance measuring components 151 can be facilitated.

[0067] Optionally, the radial dimension of the circumferential direction of the plurality of first distance measuring components 151 arranged at intervals may be greater than the radial dimension of the RF coil 13 .

[0068] In one embodiment of the utility model, the first bracket 18 can be provided with a plurality of first threaded holes, the first distance measuring component 151 can have a first external thread, the plurality of first threaded holes are arranged at intervals along the circumference of the first bracket 18, and the plurality of first distance measuring components 151 are assembled by threaded matching with the plurality of first threaded holes in a one-to-one correspondence through the first external thread.

[0069] like Figure 1 , Figure 2 and Figure 4-Figure 7 As shown, in an embodiment of the utility model, the adjustment component may include at least one adjustment component 16, and the adjustment component 16 is arranged in cooperation with at least one of the multiple bracket seats 19, and is arranged in cooperation with the second bracket 17, and is used to adjust the distance between the first bracket 18 and the dielectric window 12 at multiple positions by adjusting the distance between the matching bracket seat 19 and the second bracket 17, so as to adjust the first distance between the multiple positions between the RF coil 13 and the dielectric window 12.

[0070] Optionally, the number of the adjusting components 16 can be the same as the number of the bracket seats 19 and can be arranged in a one-to-one correspondence. In practical applications, since the first bracket 18 is arranged on the top of the plurality of bracket seats 19 and is located above the dielectric window 12, and the RF coil 13 is arranged at the bottom of the first bracket 18 and is located above the dielectric window 12, the spacing between the plurality of bracket seats 19 and the second bracket 17 can be adjusted one-to-one by the plurality of adjusting components 16, that is, the plurality of bracket seats 19 can be adjusted one-to-one to rise and fall relative to the second bracket 17, so that the spacing between the first bracket 18 and the dielectric window 12 at multiple positions can be adjusted, that is, the plurality of bracket seats 19 and the first bracket 18 can be adjusted to rise and fall relative to the second bracket 17 as a whole, so that the first bracket 18 can be raised and lowered relative to the dielectric window 12, so that the first spacing between the RF coil 13 and the dielectric window 12 at multiple positions can be adjusted, that is, the RF coil 13, the plurality of bracket seats 19 and the first bracket 18 can be adjusted to rise and fall relative to the second bracket 17 as a whole, so that the RF coil 13 can be raised and lowered relative to the dielectric window 12.

[0071] like Figure 6 and Figure 7 As shown, in one embodiment of the utility model, the bracket seat 19 can be provided with an adjusting threaded hole 191, the adjusting component 16 can have an adjusting external thread, and the second bracket 17 can be provided with an adjusting blind hole, the adjusting blind hole corresponds one-to-one to the adjusting threaded hole 191 of the bracket seat 19, the adjusting external thread of the adjusting component 16 is threadedly matched with the adjusting threaded hole 191, and the end of the adjusting component 16 is against the bottom of the adjusting blind hole.

[0072] In practical applications, by rotating the adjusting component 16 in the adjusting threaded hole 191 along the first rotation direction, the end of the adjusting component 16 moves toward the direction close to the bottom of the adjusting blind hole, and the end of the adjusting component 16 abuts against the bottom of the adjusting blind hole, the adjusting component 16 can be lifted up by the bottom of the adjusting blind hole, so that the bracket seat 19 threadedly matched with the adjusting component 16 can be raised relative to the second bracket 17 by the adjusting component 16, and then the first bracket 18 and the part of the RF coil 13 corresponding to the bracket seat 19 can be adjusted to rise relative to the dielectric window 12. By rotating the adjusting component 16 in the adjusting threaded hole 191 along the second direction opposite to the first rotation direction, the end of the adjusting component 16 moves toward the direction away from the bottom of the adjusting blind hole, the bracket seat 19 threadedly matched with the adjusting component 16 can be lowered relative to the second bracket 17, and then the first bracket 18 and the part of the RF coil 13 corresponding to the bracket seat 19 can be adjusted to fall relative to the dielectric window 12.

[0073] Optionally, the adjustment member 16 may include a top screw.

[0074] In an embodiment of the present invention, the bracket seat 19 may be further provided with an avoidance groove 194 , which is provided corresponding to the adjustment threaded hole 191 and is used to avoid adjustment of the adjustment component 16 .

[0075] In actual application, when the adjusting component 16 is adjusted by an adjusting tool, the avoidance groove 194 can avoid the adjusting tool, so that the adjusting tool can pass through the avoidance groove 194 to reach the adjusting component 16, thereby facilitating the adjustment of the adjusting component 16.

[0076] like Figure 1 and Figure 2 As shown, in one embodiment of the utility model, the semiconductor process chamber may also include a carrying component 14 and a second distance measuring component 152. The carrying component 14 is arranged in the chamber body 11 for carrying the wafer. The second distance measuring component 152 cooperates with the carrying component 14 and is arranged toward the dielectric window 12, and is used to detect the second distance between the carrying component 14 and the dielectric window 12 at multiple positions; the adjustment component is used to adjust the parallelism of the RF coil 13 and the carrying component 14 according to the first distance and the second distance.

[0077] The semiconductor process chamber provided by the embodiment of the utility model can detect the second distance between the carrying component 14 and the dielectric window 12 at multiple positions by means of the second distance measuring component 152, and can adjust the parallelism of the RF coil 13 and the carrying component 14 according to the first distance and the second distance by means of the adjustment component, so that the dielectric window 12 can be used as the detection reference and adjustment reference of the parallelism of the RF coil 13 arranged outside the chamber body 11 and the carrying component 14 arranged inside the chamber body 11, so that the detection reference and adjustment reference of the parallelism of the RF coil 13 and the carrying component 14 can be unified, and then the parallelism of the electrostatic chuck and the RF coil 13 can be detected and adjusted, and then the parallelism of the electrostatic chuck and the RF coil 13 can be improved, and then the etching uniformity of the wafer can be improved.

[0078] In practical applications, the second spacings at multiple positions between the bearing component 14 and the dielectric window 12 detected by the second ranging component 152 can represent the parallelism between the bearing component 14 and the dielectric window 12. The adjusting component can adjust the parallelism between the RF coil 13 and the dielectric window 12 by adjusting the first spacings at multiple positions between the RF coil 13 and the dielectric window 12, and further adjust the parallelism between the RF coil 13 and the bearing component 14, based on the first spacings and the second spacings at multiple positions (or the parallelism between the RF coil 13 and the dielectric window 12 and the parallelism between the bearing component 14 and the dielectric window 12).

[0079] Optionally, the carrier member 14 may include an electrostatic chuck.

[0080] like Figure 1-Figure 3 As shown, in one embodiment of the utility model, the number of the second ranging components 152 can be multiple, and the multiple second ranging components 152 are spaced apart in the circumferential direction coaxial with the supporting component 14, and are all arranged corresponding to the lower surface of the dielectric window 12, for detecting the distances between the supporting component 14 and the lower surface of the dielectric window 12 at multiple positions one by one as multiple first distances.

[0081] For example, optional, such as Figure 1 and Figure 3 As shown, the number of the second ranging components 152 can be four, and the four second ranging components 152 can be numbered A, B, C and D respectively. The four second ranging components 152 numbered A, B, C and D are used to detect the distances between four positions between the supporting component 14 and the lower surface of the dielectric window 12 in a one-to-one manner as four second distances.

[0082] Optionally, the second distance measuring component 152 may include a second laser distance measuring sensor. The second laser distance measuring sensor may emit a laser beam upward to reach the lower surface of the dielectric window 12. After the laser beam reaches the lower surface of the dielectric window 12, part of the laser beam may be scattered back to the receiver of the second laser distance measuring sensor and received by the receiver. The timer of the second laser distance measuring sensor may calculate the distance between the emission position of the laser beam and the target position (i.e., the distance between the bearing component 14 and the lower surface of the dielectric window 12) by measuring the time from the emission to the reception of the laser beam.

[0083] like Figure 1 As shown, optionally, a plurality of second distance measuring components 152 may be arranged on the bearing component 14 at intervals along the circumference of the bearing component 14 .

[0084] like Figure 1-Figure 3 As shown, in an embodiment of the utility model, the number of the first ranging components 151 can be multiple, and the multiple first ranging components 151 are spaced apart in the circumferential direction coaxial with the radio frequency coil 13, and are all arranged corresponding to the upper surface of the dielectric window 12, for detecting the spacing between the radio frequency coil 13 and the upper surface of the dielectric window 12 at multiple positions in a one-to-one manner as multiple first spacings; the multiple first ranging components 151 and the multiple second ranging components 152 are divided into multiple ranging groups, each ranging group includes at least one first ranging component 151 and at least one second ranging component 152, the first ranging components 151 and the second ranging components 152 of the same ranging group are within a radius of the dielectric window 12, and are located in a direction parallel to the radial direction of the dielectric window 12, and the multiple ranging groups are spaced apart in multiple directions parallel to multiple radial directions of the dielectric window 12 in a one-to-one correspondence.

[0085] For example, optional, such as Figure 1 and Figure 3 As shown, the number of the first distance measuring components 151 may be four, and the four first distance measuring components 151 may be numbered A1, B1, C1 and D1 respectively. The number of the second distance measuring components 152 may be four, and the four second distance measuring components 152 may be numbered A, B, C and D respectively. Among them, the first distance measuring component 151 numbered A1 and the second distance measuring component 152 numbered A are located within the first radius of the dielectric window 12 and are located in the first direction parallel to the radial direction of the dielectric window 12, forming a first distance measuring group. The first distance measuring component 151 numbered B1 and the second distance measuring component 152 numbered B are located within the second radius of the dielectric window 12 and are located in the second direction parallel to the radial direction of the dielectric window 12, forming a second distance measuring group. The first distance measuring component 151 numbered C1 and the second distance measuring component 152 numbered C are located within the third radius of the dielectric window 12 and are located in the third direction parallel to the radial direction of the dielectric window 12, forming a third distance measuring group. The first distance measuring component 151 numbered D1 and the second distance measuring component 152 numbered B1 and the second distance measuring component 152 numbered B1 are located within the second radius of the dielectric window 12 and are located in the second direction parallel to the radial direction of the dielectric window 12, forming a third distance measuring group. 151 and the second ranging component 152 numbered D are within the fourth radius range of the dielectric window 12, and are located in the fourth direction parallel to the radial direction of the dielectric window 12 as a fourth ranging group, and the first radius and the second radius are located on the first diameter of the dielectric window 12, and the third radius and the fourth radius are located on the second diameter of the dielectric window 12, that is, two ranging groups are arranged at intervals in two directions parallel to the first diameter direction and the second diameter direction of the dielectric window 12 in a one-to-one correspondence, wherein the first ranging group and the second ranging group are arranged at intervals in the direction parallel to the first diameter direction of the dielectric window 12, and the third ranging group and the fourth ranging group are arranged at intervals in the direction parallel to the second diameter direction of the dielectric window 12.

[0086] In practical applications, after the four first ranging components 151 numbered A1, B1, C1 and D1 detect the four first distances between the RF coil 13 and the upper surface of the dielectric window 12, and the four second ranging components 152 numbered A, B, C and D detect the four second distances between the supporting component 14 and the lower surface of the dielectric window 12, the distance ratio of the first distance detected by the first ranging component 151 and the second distance detected by the second ranging component 152 of the same ranging group can be calculated. For example, the four first spacings detected by the four first ranging components 151 numbered A1, B1, C1 and D1 correspond to a1, b1, c1 and d1, and the four second spacings detected by the four second ranging components 152 numbered A, B, C and D correspond to a, b, c and d. It can be calculated that the spacing ratio of the first spacing detected by the first ranging component 151 numbered A1 of the first ranging group and the second spacing detected by the second ranging component 152 numbered A is a1 / a, the spacing ratio of the first spacing detected by the first ranging component 151 numbered B1 of the second ranging group and the second spacing detected by the second ranging component 152 numbered B is b1 / b, the spacing ratio of the first spacing detected by the first ranging component 151 numbered C1 of the first ranging group and the second spacing detected by the second ranging component 152 numbered C is c1 / c, and the spacing ratio of the first spacing detected by the first ranging component 151 numbered D1 of the first ranging group and the second spacing detected by the second ranging component 152 numbered D is d1 / d.

[0087] Afterwards, the parallelism between the supporting component 14 and the RF coil 13 can be represented by four spacing ratios of a1 / a, b1 / b, c1 / c and d1 / d. Since the supporting component 14 will adjust the parallelism between the lower surface of the supporting component 14 and the dielectric window 12 after being assembled with the chamber body 11, for example, when a1 / a=25, b1 / b=15, c1 / c=20, and d1 / d=20, it can be represented that the first spacing a1 is larger than the first spacing d1, the first spacing b1 is equal to the first spacing c1, the spacing between the position of the RF coil 13 corresponding to the first spacing a1 and the supporting component 14 is greater than the spacing between the position of the RF coil 13 corresponding to the first spacing b1 and the supporting component 14, and the spacing between the position of the RF coil 13 corresponding to the first spacing c1 and the supporting component 14 is equal to the spacing between the position of the RF coil 13 corresponding to the first spacing d1 and the supporting component 14. Therefore, the first distance between the position of the RF coil 13 corresponding to the first distance a1 and the upper surface of the dielectric window 12 can be reduced by adjusting and lowering the height of the position of the RF coil 13 corresponding to the first distance a1, or the first distance between the position of the RF coil 13 corresponding to the first distance b1 can be increased by adjusting and raising the height of the position of the RF coil 13 corresponding to the first distance b1, so that the first distance a1 can be reduced and the first distance b1 can be increased, so that the first distances a1, b1, c1 and d1 are equal, and then a1 / a, b1 / b, c1 / c and d1 / d are equal, that is, the four positions of the RF coil 13 corresponding to the first distances a1, b1, c1 and d1 and the bearing component 14 are equal, so that the parallelism between the electrostatic chuck and the RF coil 13 can be improved.

[0088] Optionally, the parallelism of the RF coil 13 and the bearing component 14 can satisfy that the maximum spacing ratio minus the minimum spacing ratio among the four spacing ratios a1 / a, b1 / b, c1 / c, and d1 / d is less than 0.05. At this time, the parallelism of the RF coil 13 and the bearing component 14 can be made to be 0.05 mm at maximum. Since in the embodiment of the utility model, the first distance measuring component 151 detects the spacing between the RF coil 13 and the upper surface of the dielectric window 12 at multiple positions as the first spacing, and the second distance measuring component 152 detects the spacing between the bearing component 14 and the lower surface of the dielectric window 12 at multiple positions as the second spacing, therefore, in the embodiment of the utility model, the parallelism of the upper surface and the lower surface of the dielectric window 12 satisfies less than or equal to 0.01, and only when the maximum spacing ratio minus the minimum spacing ratio among the four spacing ratios a1 / a, b1 / b, c1 / c, and d1 / d is less than 0.05, the parallelism of the RF coil 13 and the bearing component 14 is 0.05 mm at maximum.

[0089] It should be noted that, after the support component 14 and the chamber body 11 are assembled, a level can be placed on the support component 14 to detect the level of the support component 14. Generally, the level detected by the level needs to be less than 0.05. Therefore, in the embodiment of the utility model, when adjusting the parallelism of the RF coil 13 and the support component 14, there is no need to adjust the level of the support component 14 and the support component 14 and the dielectric window 12.

[0090] like Figure 3 As shown, optionally, in a direction parallel to the radial direction of the dielectric window 12 , the first distance measuring component 151 and the second distance measuring component 152 of the same distance measuring group are arranged at intervals.

[0091] For example, in a direction parallel to the first radial direction of the dielectric window 12 , the first distance measuring component 151 numbered A1 and the second distance measuring component 152 numbered A of the first distance measuring group are arranged at intervals.

[0092] like Figure 3 As shown, optionally, a plurality of distance measurement groups spaced apart in a direction parallel to the diameter direction of the dielectric window 12 may be centrally symmetrical.

[0093] For example, the first distance measuring group and the second distance measuring group spaced apart in a direction parallel to the first diameter direction of the dielectric window 12 may be centrally symmetrical. This can improve the accuracy of detecting and adjusting the parallelism between the electrostatic chuck and the RF coil 13.

[0094] Optionally, in a direction parallel to the radial direction of the dielectric window 12 , a plurality of support seats 19 and a plurality of distance measuring groups may be arranged in a one-to-one correspondence.

[0095] Such a design enables that when the parallelism of the RF coil 13 and the bearing component 14 is adjusted according to the parallelism of the RF coil 13 and the bearing component 14 determined by the multiple ranging groups, the spacing between the multiple bracket seats 19 and the second bracket 17 can be adjusted by adjusting the multiple bracket seats 19 arranged in a one-to-one correspondence with the multiple ranging groups, thereby adjusting the parallelism of the RF coil 13 and the bearing component 14, so that the parallelism adjustment of the RF coil 13 and the bearing component 14 can be more accurate.

[0096] In one embodiment of the utility model, the bearing component 14 may be provided with a plurality of second threaded holes, the second distance measuring component 152 may have a second external thread, the plurality of second threaded holes are arranged at intervals along the circumference of the bearing component 14, and the plurality of second distance measuring components 152 are assembled in one-to-one threaded matching with the plurality of second threaded holes through the second external thread.

[0097] like Figure 8As shown, the embodiment of the present invention further provides a semiconductor process equipment, including an operation circuit 21 and a semiconductor process chamber as provided in the embodiment of the present invention, the operation circuit 21 is electrically connected to multiple first distance measuring components 151 and multiple second distance measuring components 152 respectively, and is used to calculate a proportional electrical signal representing a spacing ratio of a first spacing and a second spacing corresponding to the first spacing according to basic electrical signals generated by multiple first spacings and multiple second spacings, and the multiple spacing ratios are used to represent the parallelism of the radio frequency coil 13 and the supporting component 14.

[0098] The semiconductor process equipment provided by the embodiment of the utility model is provided with an operation circuit 21 which is electrically connected to the first distance measuring component 151 and the second distance measuring component 152 of the semiconductor process chamber provided by the embodiment of the utility model respectively. The operation circuit 21 can calculate a proportional electrical signal representing the spacing ratio of the first spacing and the second spacing corresponding to the first spacing according to the basic electrical signals generated by the multiple first spacings and the multiple second spacings. The multiple spacing ratios are used to represent the parallelism of the RF coil 13 and the carrying component 14, so that the dielectric window 12 can be used as a detection reference and an adjustment reference for the parallelism of the RF coil 13 arranged outside the chamber body 11 and the carrying component 14 arranged inside the chamber body 11, so that the detection reference and the adjustment reference for the parallelism of the RF coil 13 and the carrying component 14 can be unified, and then the parallelism of the electrostatic chuck and the RF coil 13 can be detected and adjusted, and then the parallelism of the electrostatic chuck and the RF coil 13 can be improved, and then the etching uniformity of the wafer can be improved.

[0099] By calculating the proportional electrical signal representing the spacing ratio between the first spacing and the second spacing corresponding to the first spacing with the aid of the operation circuit 21, the parallelism between the RF coil 13 and the carrying component 14 can be quantified, so that the adjustment personnel can intuitively and accurately determine the parallelism between the RF coil 13 and the carrying component 14, thereby making the adjustment of the parallelism between the RF coil 13 and the carrying component 14 convenient and accurate.

[0100] like Figure 8 As shown, in one embodiment of the utility model, the operation circuit 21 may include an exponential operation subcircuit 211, a differential ratio operation subcircuit 212 and two logarithmic operation subcircuits 213. The two logarithmic operation subcircuits 213 are electrically connected to the first distance measuring component 151 and the second distance measuring component 152 in a one-to-one correspondence, and are used to convert the first basic electrical signal generated by the first spacing and the second basic electrical signal generated by the second spacing into the first logarithm and the second logarithm, respectively. The differential ratio operation subcircuit 212 is electrically connected to the two logarithmic operation subcircuits 213, respectively, and is used to output the difference between the first logarithm and the second logarithm. The exponential operation subcircuit 211 is electrically connected to the differential ratio operation subcircuit 212, and is used to output a proportional electrical signal.

[0101] For example, Figure 8 As shown, the first basic electrical signal generated by the first ranging component 151 numbered A1 detecting the first distance may be a voltage U, the second basic electrical signal generated by the second ranging component 152 numbered A which is in the same ranging group as the first ranging component 151 numbered A1 detecting the second distance may be a voltage V, one of the two logarithmic operation subcircuits 213 may convert the voltage U into lnU, the other of the two logarithmic operation subcircuits 213 may convert the voltage V into lnV, the differential proportional operation subcircuit 212 may output lnU-lnV, and the exponential operation subcircuit 211 may output U0=U / V as a proportional electrical signal according to lnU-lnV.

[0102] like Fig. 9 As shown, in one embodiment of the present invention, the semiconductor process equipment may further include a display circuit 22, which is electrically connected to the operation circuit 21 and is used to display the spacing ratio according to the proportional electrical signal.

[0103] By using the display circuit 22 to display the spacing ratio according to the proportional electrical signal, the parallelism of the RF coil 13 and the carrying component 14 can be visualized, so that the adjustment personnel can further intuitively and accurately determine the parallelism of the RF coil 13 and the carrying component 14, thereby making the adjustment of the parallelism of the RF coil 13 and the carrying component 14 more convenient and accurate.

[0104] like Fig. 9 As shown, in one embodiment of the utility model, the display circuit 22 may include a counting module 221, a driving module 222 and a display module 223. The counting module 221 is electrically connected to the operation circuit 21, and is used to count the number of pulses generated according to the proportional electrical signal input. The driving module 222 is electrically connected to the counting module 221 and the display module 223, respectively, and is used to send a driving signal to the display module 223 according to the counting result of the counting module 221. The display module 223 is used to display the spacing ratio according to the driving signal.

[0105] like Fig. 9 As shown, optionally, the number of counting modules 221, the number of driving modules 222 and the number of display modules 223 can all be multiple, the multiple counting modules 221 are electrically connected in sequence, and one counting module 221 among the multiple counting modules 221 is electrically connected to the operation circuit 21, the multiple counting modules 221 are electrically connected to the multiple driving modules 222 in a one-to-one correspondence, and the multiple display modules 223 are electrically connected to the multiple driving modules 222 in a one-to-one correspondence.

[0106] In practical applications, for example, when a counting module 221 electrically connected to the operation circuit 21 counts to 9, the counting module 221 can send a carry signal to another counting module 221 electrically connected thereto, so that a plurality of driving modules 222 electrically connected one-to-one to the plurality of counting modules 221 can send a drive signal to a plurality of display modules 223 electrically connected one-to-one to the plurality of driving modules 222 according to the counting results of the corresponding counting modules 221, and the plurality of display modules 223 can display the spacing ratio according to the corresponding driving signal, thereby realizing the display of multi-digit spacing ratios.

[0107] Optionally, the counting module 221 may include a counter of model 74LS192D.

[0108] Optionally, the driving module 222 may include a digital tube driving chip of model 4511BD.

[0109] In summary, the semiconductor process chamber and semiconductor process equipment provided by the embodiments of the present invention can detect and adjust the parallelism between the electrostatic chuck and the RF coil 13, thereby improving the parallelism between the electrostatic chuck and the RF coil 13, and further improving the etching uniformity of the wafer.

[0110] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process chamber, characterized in that: It includes a chamber body, a dielectric window, a radio frequency coil, a first distance measuring component and an adjustment component, The medium window is arranged on the top of the chamber body; The radio frequency coil is arranged outside the chamber body and above the dielectric window; The first distance measuring component cooperates with the radio frequency coil and is disposed toward the dielectric window, and is used to detect a first distance between a plurality of positions of the radio frequency coil and the dielectric window; The adjustment component is arranged in cooperation with the radio frequency coil, and is used to adjust the parallelism between the radio frequency coil and the dielectric window according to the first distance.

2. The semiconductor process chamber according to claim 1, characterized in that: There are multiple first ranging components, which are spaced apart in a circumferential direction coaxial with the RF coil and are all arranged corresponding to the upper surface of the dielectric window, and are used to detect the distances between the RF coil and the upper surface of the dielectric window at multiple positions in a one-to-one correspondence as multiple first distances.

3. The semiconductor process chamber according to claim 2, characterized in that: The semiconductor process chamber further comprises a first bracket and a plurality of bracket seats, wherein the plurality of bracket seats surround the dielectric window, the first bracket is arranged on the top of the plurality of bracket seats and is located above the dielectric window, and the radio frequency coil is arranged on the bottom of the first bracket and is located above the dielectric window; A plurality of first distance measuring components are arranged on the first bracket at intervals along the circumferential direction of the first bracket, and are used to detect distances at a plurality of positions between the first bracket and the upper surface of the dielectric window as a plurality of first distances.

4. The semiconductor process chamber according to claim 3, characterized in that: The first bracket is provided with a plurality of first threaded holes, the first distance measuring component has a first external thread, the plurality of first threaded holes are arranged at intervals along the circumference of the first bracket, and the plurality of first distance measuring components are assembled through the first external thread and the plurality of first threaded holes in a one-to-one corresponding threaded matching manner.

5. The semiconductor process chamber according to claim 3, characterized in that: The semiconductor process chamber further comprises a second bracket, the second bracket is arranged in a ring shape on the top of the chamber body, and the dielectric window is arranged on the top of the second bracket; The adjustment assembly includes at least one adjustment component, which is arranged in cooperation with at least one of the multiple bracket seats and is arranged in cooperation with the second bracket, and is used to adjust the distance between the first bracket and the dielectric window at multiple positions by adjusting the distance between the matching bracket seat and the second bracket, so as to adjust the first distance between the radio frequency coil and the dielectric window at multiple positions.

6. The semiconductor process chamber according to claim 5, characterized in that: The bracket seat is provided with an adjustment threaded hole, the adjustment component has an adjustment external thread, and the second bracket is provided with an adjustment blind hole, the adjustment blind hole corresponds to the adjustment threaded hole of the bracket seat one by one, the adjustment external thread of the adjustment component is threadedly matched with the adjustment threaded hole, and the end of the adjustment component is against the bottom of the adjustment blind hole.

7. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further includes a carrying component and a second distance measuring component. The carrying component is arranged in the chamber body and is used for carrying the wafer. The second distance measuring component cooperates with the bearing component and is disposed toward the dielectric window, and is used to detect a second distance between a plurality of positions of the bearing component and the dielectric window; The adjusting component is used to adjust the parallelism between the RF coil and the carrying component according to the first distance and the second distance.

8. The semiconductor process chamber according to claim 7, characterized in that: There are multiple second distance measuring components, which are spaced apart in the circumferential direction coaxial with the supporting component and are all arranged corresponding to the lower surface of the dielectric window, and are used to detect the distances between the supporting component and the lower surface of the dielectric window at multiple positions in a one-to-one correspondence as multiple second distances.

9. The semiconductor process chamber according to claim 8, characterized in that: There are multiple first distance measuring components, which are spaced apart in a circumferential direction coaxial with the radio frequency coil and are all arranged corresponding to the upper surface of the dielectric window, and are used to detect the distances between the radio frequency coil and the upper surface of the dielectric window at multiple positions in a one-to-one correspondence as multiple first distances; The plurality of first ranging components and the plurality of second ranging components are divided into a plurality of ranging groups, each of the ranging groups includes at least one first ranging component and at least one second ranging component, the first ranging components and the second ranging components of the same ranging group are within a radius of the dielectric window and are located in a direction parallel to the radial direction of the dielectric window, and the plurality of ranging groups are spaced apart in a plurality of directions parallel to a plurality of radial directions of the dielectric window in a one-to-one correspondence.

10. The semiconductor process chamber according to claim 8, characterized in that: The bearing component is provided with a plurality of second threaded holes, the second distance measuring component has a second external thread, the plurality of second threaded holes are arranged at intervals along the circumference of the bearing component, and the plurality of second distance measuring components are assembled through the second external thread and the plurality of second threaded holes in a one-to-one corresponding threaded matching manner.

11. The semiconductor process chamber according to any one of claims 2 to 6, characterized in that: The semiconductor process chamber further includes a carrying component and a second distance measuring component. The carrying component is arranged in the chamber body and is used for carrying the wafer. The second distance measuring component cooperates with the bearing component and is disposed toward the dielectric window, and is used to detect a second distance between a plurality of positions of the bearing component and the dielectric window; The adjusting component is used to adjust the parallelism between the RF coil and the carrying component according to the first distance and the second distance.

12. The semiconductor process chamber according to claim 11, characterized in that: There are multiple second distance measuring components, which are spaced apart in the circumferential direction coaxial with the supporting component and are all arranged corresponding to the lower surface of the dielectric window, and are used to detect the distances between the supporting component and the lower surface of the dielectric window at multiple positions in a one-to-one correspondence as multiple second distances.

13. The semiconductor process chamber according to claim 12, wherein: The plurality of first ranging components and the plurality of second ranging components are divided into a plurality of ranging groups, each of the ranging groups includes at least one first ranging component and at least one second ranging component, the first ranging components and the second ranging components of the same ranging group are within a radius of the dielectric window and are located in a direction parallel to the radial direction of the dielectric window, and the plurality of ranging groups are spaced apart in a plurality of directions parallel to a plurality of radial directions of the dielectric window in a one-to-one correspondence.

14. The semiconductor process chamber according to claim 12, wherein: The bearing component is provided with a plurality of second threaded holes, the second distance measuring component has a second external thread, the plurality of second threaded holes are arranged at intervals along the circumference of the bearing component, and the plurality of second distance measuring components are assembled through the second external thread and the plurality of second threaded holes in a one-to-one corresponding threaded matching manner.

15. A semiconductor process equipment, characterized in that: comprising an operation circuit and a semiconductor process chamber as claimed in any one of claims 7 to 14, The operation circuit is electrically connected to the first distance measuring component and the second distance measuring component respectively, and is used to calculate a proportional electrical signal representing a spacing ratio of the first spacing and the second spacing corresponding to the first spacing based on basic electrical signals generated by multiple first spacings and multiple second spacings, and the multiple spacing ratios are used to represent the parallelism of the radio frequency coil and the supporting component.

16. The semiconductor process equipment according to claim 15, characterized in that: The operation circuit includes an exponential operation subcircuit, a differential ratio operation subcircuit and two logarithmic operation subcircuits. The two logarithmic operation subcircuits are electrically connected to the first distance measuring component and the second distance measuring component in a one-to-one correspondence, and are used to convert the first basic electrical signal generated by the first distance and the second basic electrical signal generated by the second distance into a first logarithm and a second logarithm, respectively. The differential ratio operation subcircuit is electrically connected to the two logarithmic operation subcircuits respectively, and is used to output the difference between the first logarithm and the second logarithm. The exponential operation subcircuit is electrically connected to the differential proportional operation subcircuit, and is used to output the proportional electrical signal.

17. The semiconductor process equipment according to claim 15, characterized in that: The semiconductor process equipment further includes a display circuit, which is electrically connected to the operation circuit and is used to display the spacing ratio according to the proportional electrical signal.

18. The semiconductor process equipment according to claim 17, characterized in that: The display circuit includes a counting module, a driving module and a display module. The counting module is electrically connected to the operation circuit and is used to count the number of pulses generated by the proportional electrical signal input. The driving module is electrically connected to the counting module and the display module, respectively, and is used to send a driving signal to the display module according to the counting result of the counting module. The display module is used to display the spacing ratio according to the driving signal.

Images