A 200W high power boost circuit
By adopting the digital integrated IC circuit design and using the power management chip U1 and other components to achieve boosting, the problem of high cost, complexity and high failure rate of traditional analog boosting circuits is solved, and the circuit is simplified, cost reduction and failure rate reduction are achieved.
Patent Information
- Application Number
- CN202421362478.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-14
- Publication Date
- 2025-04-08
- Estimated Expiration
- 2034-06-14
AI Technical Summary
The traditional automotive amplifier TL494 with existing 200W high-power lever audio has a high cost, complex circuit, high failure rate, troublesome debugging, and occupies a large amount of PCB space, which poses a risk of breaking the PCB.
The digital integrated IC circuit design is adopted, including power management chip U1, transistors Q1-Q4, MOS tube Q3, Schottky diode D1 and inductor L1. The drive signal output of the power management chip U1 is combined with inductor L1, MOS tube Q3 and Schottky diode D1 to achieve boost.
It realizes simplification of the circuit, reduces cost, reduces failure rate, is easy to debug, and is light in weight, takes up less PCB space, and is easy to wiring.
Smart Images
Figure CN222736019U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of audio, in particular to a 200W high-power boost circuit for a high-power pull-rod audio. Background Art
[0002] At present, many high-power trolley speakers with batteries mostly use the traditional car amplifier TL494 analog boost circuit. The analog boost circuit is costly, complex, has a high failure rate, and is difficult to debug; the entire circuit occupies 70% of the total weight on the PCB, and there is a risk of breaking the PCB; the entire circuit occupies 50% of the total area on the PCB, which is not conducive to the wiring of other circuits. Summary of the invention
[0003] The technical problem to be solved by the utility model is a 200W high-power boost circuit, which has the advantages of simple circuit, reduced cost, convenient debugging and low failure rate.
[0004] In order to solve the above technical problems, the technical solution of the utility model is: a 200W high-power boost circuit, including a power management chip U1, a transistor Q1, a transistor Q2, a MOS tube Q3, a transistor Q4, a Schottky diode D1 and an inductor L1, a voltage input terminal +VCC4 is respectively connected to the second pin of the power management chip U1 and the input end of the inductor L1, the voltage input terminal +VCC4 is connected to the collector of the transistor Q4 through a resistor R87, the emitter of the transistor Q4 is grounded, the third pin of the power management chip U1 is connected to the collector of the transistor Q4, the power management chip The 4th pin of U1 is grounded through the resistor R90, the 1st pin of the power management chip U1 is respectively connected to the base of the transistor Q1 and the base of the transistor Q2, the collector of the transistor Q1 is connected to the input end of the inductor L1, the output end of the inductor L1 is connected to the drain of the Schottky diode D1 and the MOS tube Q3, the output end of the Schottky diode D1 is connected to the voltage output end +VCC5, the emitter of the transistor Q1, the collector of the transistor Q2 and the gate of the MOS tube Q3 are connected, the emitter of the transistor Q2 is grounded, and the source of the MOS tube Q3 is connected to the 8th pin of the power management chip U1. The principle of the utility model is as follows: the input voltage of the second pin of the power management chip U1 is 12V, and the third pin is at a high level, the power management chip U1 is in a working state, the working frequency of the power management chip U1 is set at the fourth pin, the driving signal output of the power management chip U1 is output, and the boost is achieved through the inductor L1, the MOS tube Q3 and the Schottky diode D1; wherein the eighth pin of the power management chip U1 is the current limiting detection pin of the MOS tube Q3 switch, and the power management chip U1 will stop working if the current is too large.
[0005] As an improvement, the 5th pin of the power management chip U1 is connected to the voltage output terminal +VCC5 through resistors R92 and R93 in sequence, and the 5th pin of the power management chip U1 is grounded through resistor R91.
[0006] As an improvement, the model of the power management chip U1 is TX4221.
[0007] Compared with the prior art, the utility model has the following beneficial effects:
[0008] It adopts digital integrated IC circuit design, which has low cost, few peripherals, simple circuit, easy debugging, few failures, light weight, easy wiring, and takes up less PCB. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figure 1 This is the circuit schematic diagram of the utility model. DETAILED DESCRIPTION
[0010] The utility model will be further described below in conjunction with the accompanying drawings.
[0011] like Figure 1As shown, a 200W high-power boost circuit includes a power management chip U1, a transistor Q1, a transistor Q2, a MOS tube Q3, a transistor Q4, a Schottky diode D1 and an inductor L1, wherein the power management chip U1 is of a TX4221 type; a voltage input terminal +VCC4 is respectively connected to the second pin of the power management chip U1 and the input end of the inductor L1, the voltage input terminal +VCC4 is connected to the collector of the transistor Q4 through a resistor R87, the emitter of the transistor Q4 is grounded, the third pin of the power management chip U1 is connected to the collector of the transistor Q4, and the power management chip The 4th pin of chip U1 is grounded through resistor R90, the 1st pin of power management chip U1 is respectively connected to the base of transistor Q1 and the base of transistor Q2, the collector of transistor Q1 is connected to the input end of inductor L1, the output end of inductor L1 is connected to the drain of Schottky diode D1 and MOS tube Q3, the output end of Schottky diode D1 is connected to the voltage output end +VCC5, the emitter of transistor Q1, the collector of transistor Q2 and the gate of MOS tube Q3 are connected, the emitter of transistor Q2 is grounded, and the source of MOS tube Q3 is connected to the 8th pin of power management chip U1; The 5th pin of the power management chip U1 is connected to the voltage output terminal +VCC5 through resistors R92 and R93 in turn. The 5th pin of the power management chip U1 is grounded through resistor R91. The 5th pin can adjust the output voltage Vbat=(R93+R92) / R91+1=29V; the voltage output terminal +VCC4 is grounded through parallel capacitors C56 and C55, and the output end of the inductor L1 is connected to the voltage output terminal +VCC5 through resistor R73 and capacitor C60 in turn. The source of the MOS tube Q3 is grounded through parallel resistors R82, R83, R84 and R85. The resistor R 91 is connected in parallel with capacitor C57, the voltage output terminal +VCC5 is grounded through parallel capacitors C58 and C61, the voltage input terminal +VCC4 is respectively connected to the cathode of diode D6, one end of resistor R109 and the collector of transistor Q5, the emitter of transistor Q5 is grounded, the base of transistor Q5 is respectively connected to the anode of diode D6, the other end of resistor R109 and the positive electrode of capacitor C100 through voltage stabilizing diode D5, the signal MUTE is connected to the base of transistor Q4 through diode D3, and the collector of transistor Q5 is connected to the base of transistor Q4 through diode D4.
[0012] The principle of the utility model is as follows: the input voltage of the second pin of the power management chip U1 is 12V, and the third pin is at a high level, the power management chip U1 is in a working state, the working frequency of the power management chip U1 is set at the fourth pin, the driving signal output of the power management chip U1 is output, and the boost is achieved through the inductor L1, the MOS tube Q3 and the Schottky diode D1; wherein the eighth pin of the power management chip U1 is the current limiting detection pin of the MOS tube Q3 switch, and the power management chip U1 will stop working if the current is too large.
Claims
1. A 200W high-power boost circuit, characterized in that: It includes a power management chip U1, a transistor Q1, a transistor Q2, a MOS tube Q3, a transistor Q4, a Schottky diode D1 and an inductor L1. The voltage input terminal +VCC4 is connected to the second pin of the power management chip U1 and the input terminal of the inductor L1 respectively. The voltage input terminal +VCC4 is connected to the collector of the transistor Q4 through a resistor R87. The emitter of the transistor Q4 is grounded. The third pin of the power management chip U1 is connected to the collector of the transistor Q4. The fourth pin of the power management chip U1 is grounded through a resistor R90. The first pin of the management chip U1 is connected to the base of the transistor Q1 and the base of the transistor Q2 respectively, the collector of the transistor Q1 is connected to the input end of the inductor L1, the output end of the inductor L1 is connected to the drain of the Schottky diode D1 and the MOS tube Q3, the output end of the Schottky diode D1 is connected to the voltage output end +VCC5, the emitter of the transistor Q1, the collector of the transistor Q2 and the gate of the MOS tube Q3 are connected, the emitter of the transistor Q2 is grounded, and the source of the MOS tube Q3 is connected to the eighth pin of the power management chip U1.
2. A 200W high-power boost circuit according to claim 1, characterized in that: The fifth pin of the power management chip U1 is connected to the voltage output terminal +VCC5 through resistors R92 and R93 in sequence, and the fifth pin of the power management chip U1 is grounded through resistor R91.
3. A 200W high-power boost circuit according to claim 1, characterized in that: The model of the power management chip U1 is TX4221.