Light and thin integrated circuit frame and semiconductor device
By setting up a soldering layer on the ceramic base island of the integrated circuit frame, the wiring pins and fixed pins are fixedly connected, which solves the problems of wiring pin offset and large frame thickness, and achieves a more stable connection and a thinner frame structure.
Patent Information
- Application Number
- CN202421585362.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-05
- Publication Date
- 2025-04-11
- Estimated Expiration
- 2034-07-05
AI Technical Summary
During the production process of existing integrated circuit frameworks, the wiring pins are easily deviated due to external forces, resulting in unstable connections, and the overall thickness of the frame is large, hindering the development of thinning and miniaturization.
A ceramic substrate is used as the base island, and a first welding layer and a second welding layer are provided thereon. Through these welding layers, the wiring pins and fixed pins are fixedly connected to the base island to ensure accurate positioning and planarity.
It effectively avoids the wiring pins being offset due to external forces, improves the connection stability with the integrated circuit, improves product quality, and reduces the thickness of the integrated circuit frame, and promotes the thinning and miniaturization of semiconductor devices.
Smart Images
Figure CN222749495U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of electronic components, in particular to a light and thin integrated circuit frame and a semiconductor device. Background Art
[0002] As an integrated circuit carrier, the integrated circuit frame plays a vital role in the semiconductor industry. The integrated circuit frame is widely used in the packaging of integrated circuits (ICs), discrete components and other electronic components. The integrated circuit frame is used to connect the integrated circuit to the external circuit to form an electrical circuit. The integrated circuit frame includes wiring pins, fixed pins and base islands. One end of the wiring pin is connected to the integrated circuit through a bonding wire, and the other end of the wiring pin is connected to the external circuit.
[0003] In the prior art, during the production of semiconductor devices, one end of the wiring pin connected to the bonding wire is used as a free end and is spaced apart from the base island, that is, the wiring pin is suspended, and the fixed pin is fixed to the base island by riveting through rivet holes and rivets. Since there is a matching gap between the rivet holes and the rivets, the wiring pin and the base island are offset. In this way, not only are the wiring pins prone to upward or downward or leftward offsets during the process of welding the bonding wires or the process of encapsulating the injection molded plastic package, resulting in unstable or offset connections between the wiring pins and the bonding wires, but the overall thickness of the integrated circuit frame is also increased, which is not conducive to the development trend of thinning and miniaturization.
[0004] Therefore, the existing integrated circuit framework needs to be improved. Summary of the invention
[0005] The purpose of the utility model is to provide a thin and light integrated circuit frame and semiconductor device, which can not only prevent the wiring pins from being offset when subjected to external forces, achieve precise positioning, and improve the stability of the connection between the wiring pins and the integrated circuit, thereby improving the quality of the product, but also reduce the overall thickness of the integrated circuit frame, which is conducive to the development trend of thinning and miniaturization of semiconductor devices.
[0006] The purpose of the utility model is achieved by the following technical solutions:
[0007] A thin and light integrated circuit frame, comprising:
[0008] A pin rack, the pin rack comprising connection pins and fixing pins;
[0009] A base island, the base island is used to carry an integrated circuit, and the wiring pins are connected to the integrated circuit through bonding wires;
[0010] The base island is made of a ceramic substrate, a first soldering layer and a second soldering layer are provided on the base island, the fixed pin is fixedly connected to the base island through the first soldering layer, and the fixed pin is fixedly connected to the base island through the second soldering layer.
[0011] Preferably, the area on the base island where the first soldering layer is arranged is a planar structure, and the first soldering layer is arranged protruding from the surface of the base island; or,
[0012] A first recess is disposed on the base island, and at least a portion of the first soldering layer is filled in the first recess.
[0013] Preferably, the area on the base island where the second soldering layer is arranged is a planar structure, and the second soldering layer is arranged protruding from the surface of the base island; or,
[0014] A second recess is disposed on the base island, and at least a portion of the second soldering layer is filled in the second recess.
[0015] Preferably, a first thin film area is provided at a position on the surface of the base island corresponding to the connection pin, so as to reduce the height of the connection pin protruding from the base island; and / or,
[0016] A second thin film area is provided at a position on the surface of the base island corresponding to the fixing pin to reduce the height of the fixing pin protruding from the base island; and / or,
[0017] A third thin film region is arranged at a position on the surface of the base island corresponding to the integrated circuit to reduce the height of the integrated circuit protruding from the base island.
[0018] Preferably, the connection pin has a first end and a second end opposite to each other, the first end of the connection pin is arranged toward the integrated circuit, a third soldering layer is arranged on the surface of the first end of the connection pin, and the third soldering layer is connected to the integrated circuit through a bonding wire; and / or,
[0019] A fourth soldering layer is arranged at a position of the base island corresponding to the integrated circuit to increase the bonding force between the base island and the integrated circuit.
[0020] Preferably, the upper surface of the third soldering layer is flush with the upper surface of the integrated circuit to shorten the length of the bonding wire, and / or,
[0021] A projection area of the fourth soldering layer on the base island is larger than a projection area of the integrated circuit on the base island.
[0022] Preferably, the upper surface of the connection pin is flush with the upper surface of the fixing pin; and / or,
[0023] The number of the fixing pins is four, and the four fixing pins are respectively arranged close to the four corners of the base island.
[0024] Preferably, the connection pins and the fixing pins are connected to the same material strip; or,
[0025] The connection pins and the fixing pins are cut from the same material strip.
[0026] A semiconductor device comprises the integrated circuit frame, the integrated circuit and the plastic package as described in any one of the above items, wherein the integrated circuit is arranged on the base island of the integrated circuit frame, the plastic package covers at least part of the integrated circuit and at least part of the integrated circuit frame, and at least part of the wiring pins are exposed from the plastic package.
[0027] Preferably, the plastic package body is formed by injection molding, and the material of the plastic package body is a thermosetting material, and the thermosetting material is epoxy resin; or,
[0028] The material of the plastic package body is a thermoplastic material, and the thermoplastic material is a liquid crystal polymer material.
[0029] Compared with the prior art, the beneficial effects of the present invention include at least:
[0030] The light and thin integrated circuit frame and semiconductor device of the utility model can fix the connection pins to the base island through the first soldering layer, which can avoid the displacement of the connection pins when subjected to external force, accurately position the connection pins, ensure the flatness of the connection pins, improve the stability of the connection between the connection pins and the integrated circuit, and thus improve the quality of the product. At the same time, since the thickness of the first soldering layer is relatively small, the overall thickness of the integrated circuit frame can be reduced, which is conducive to the development trend of thinning and miniaturization of semiconductor devices. Compared with the riveting method, the fixed pins are fixedly connected to the base island through the second soldering layer, which can not only eliminate the matching gap between the rivet hole and the rivet, but also avoid the displacement between the fixed pins and the base island causing the displacement of the connection pins, thereby improving the stability of the connection between the connection pins and the integrated circuit. At the same time, since the thickness of the second soldering layer is also relatively small, the overall thickness of the integrated circuit frame can also be reduced, which is conducive to the development trend of thinning and miniaturization of semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] Figure 1 It is a three-dimensional structural schematic diagram of the lead frame in the embodiment of the utility model.
[0032] Figure 2 yes Figure 1 A local enlarged schematic diagram of point A in the middle.
[0033] Figure 3It is a schematic diagram of the three-dimensional structure of the base island in the embodiment of the utility model.
[0034] Figure 4 It is a three-dimensional structural schematic diagram of a semiconductor device according to an embodiment of the utility model.
[0035] Figure 5 It is a schematic diagram of the planar structure of a semiconductor device according to an embodiment of the utility model.
[0036] Figure 6 yes Figure 5 Schematic diagram of the cross section along the AA direction.
[0037] Figure 7 It is a schematic diagram of the three-dimensional structure of the semiconductor device of the embodiment of the utility model when no plastic packaging body is provided.
[0038] Figure 8 It is a schematic diagram of the planar structure of the semiconductor device of the embodiment of the utility model when no plastic packaging body is provided.
[0039] Fig. 9 yes Figure 8 A schematic cross-sectional view along the BB direction.
[0040] Fig.10 yes Fig. 9 A local enlarged schematic diagram of point B in the middle.
[0041] Fig.11 yes Figure 8 Another cross-sectional schematic diagram along the BB direction.
[0042] Fig.12 yes Fig.11 A partial enlarged schematic diagram of point C in the middle.
[0043] In the figure: 100, semiconductor device; 1, integrated circuit frame; 11, pin rack; 111, wiring pin; 1111, first end; 1112, second end; 1113, third solder layer; 112, fixed pin; 113, material strip; 12, base island; 121, first side; 122, second side; 123, first side; 124, second side; 125, first solder layer; 126, second solder layer; 127, fourth solder layer; 128, first recess; 2, integrated circuit; 3, bonding wire; 4, plastic package. DETAILED DESCRIPTION
[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete and to fully convey the concepts of example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their repeated description will be omitted.
[0045] The words expressing positions and directions described in the present utility model are all explained by taking the drawings as examples, but they can be changed as needed, and all the changes are included in the protection scope of the present utility model.
[0046] Reference Figures 1 to 12 The utility model provides a thin and light integrated circuit frame 1, which is used to install an integrated circuit 2. The integrated circuit frame 1 may include: a lead frame 11 and a base island 12, and the integrated circuit 2 may be arranged on the base island 12.
[0047] Specifically, refer to Figure 3 , Figure 7 The base island 12 can be a rectangular parallelepiped as a whole, and of course can be set to other shapes as needed. In this embodiment, the base island 12 is a rectangular parallelepiped as a whole, and the base island 12 has a first surface 121 and a second surface 122 that are arranged opposite to each other, and a first side 123 and a second side 124 that are arranged opposite to each other. The first surface 121 and the second surface 122 are preferably two surfaces with larger areas on the base island 12. The base island 12 is used to carry the integrated circuit 2 and provide support for the integrated circuit 2. The integrated circuit 2 can be set on the first surface 121 of the base island 12, and the integrated circuit 2 is preferably set close to the center of the first surface 121 of the base island 12.
[0048] The material of the base island 12 can be a ceramic substrate, which has excellent electrical insulation performance and high thermal conductivity, and can further improve the heat dissipation effect of the integrated circuit 2, thereby dissipating the heat generated when the integrated circuit 2 is working, ensuring that the integrated circuit 2 can operate normally. In addition, the integrated circuit 2 usually uses semiconductor materials such as SiC (silicon carbide) or GaN (gallium nitride), which are closer to the thermal expansion coefficient materials of the ceramic substrate, so the deformation coefficients of the two are close during thermal expansion, and their matching performance is more stable. The ceramic substrate also has a certain structural strength to ensure that the base island 12 can provide stable support for the integrated circuit 2 and ensure the stability of the position of the integrated circuit 2.
[0049] As a preferred embodiment, the material of the ceramic substrate may be aluminum oxide or silicon nitride. Aluminum oxide has a higher thermal conductivity, while silicon nitride has a higher structural strength.
[0050] Reference Figure 1 , Figure 2 , Figure 7The pin frame 11 may include a wiring pin 111 and a fixing pin 112. The wiring pin 111 and the fixing pin 112 may be arranged around the integrated circuit 2. The ends of the wiring pin 111 and the fixing pin 112 close to the integrated circuit 2 are preferably arranged on the first surface 121 of the base island 12. The wiring pin 111 has a first end 1111 and a second end 1112 opposite to each other. The first end 1111 of the wiring pin 111 is arranged toward the integrated circuit 2, that is, the first end 1111 of the wiring pin 111 is arranged close to the integrated circuit 2 and is located on the first surface 121 of the base island 12. The first end 1111 of the wiring pin 111 may be electrically connected to the integrated circuit 2 through a bonding wire 3. The bonding wire 3 is, for example, a gold wire, and the bonding wire 3 may also be made of other materials. The second end 1112 of the wiring pin 111 may be electrically connected to an external circuit, for example, a circuit board. The integrated circuit 2 is electrically connected to the wiring pin 111 through the bonding wire 3, and is electrically connected to the external circuit through the wiring pin 111, so that the integrated circuit 2 and the external circuit can communicate with each other.
[0051] On the first surface 121 of the base island 12, a first soldering layer 125 and a second soldering layer 126 may be provided, the connection pin 111 is fixedly connected to the base island 12 through the first soldering layer 125, and the fixed pin 112 is fixedly connected to the base island 12 through the second soldering layer 126. The first soldering layer 125 and the second soldering layer 126 are preferably of the same structure and the same material. The first soldering layer 125 and the second soldering layer 126 may both include one or more of a copper layer, a tin layer, etc., and the first soldering layer 125 and the second soldering layer 126 may be formed by a DPC process (Direct Plating Copper), electroplating or chemical plating. The connection pin 111 may be fixedly connected to the base island 12 through the first soldering layer 125, for example, the connection pin 111 and the first soldering layer 125 may be fixedly connected by laser welding or soldering. The fixing pin 112 may be fixedly connected to the base island 12 via the second soldering layer 126 . For example, the fixing pin 112 and the second soldering layer 126 may be fixedly connected via laser welding or soldering.
[0052] The number of the connection pins 111 may be one or more, each connection pin 111 may be connected to one or more bonding wires 3, and the number of the first soldering layers 125 corresponds to the number of the connection pins 111. In this embodiment, the number of the connection pins 111 is multiple, the multiple connection pins 111 are spaced apart, the multiple connection pins 111 are divided into two columns, the two columns of connection pins 111 are respectively arranged on the first side 123 and the second side 124 of the base island 12, the multiple first soldering layers 125 are also spaced apart, and the connection pins 111 are arranged one by one with the first soldering layers 125. The connection pins 111 are preferably made of a conductive material, and more preferably a metal material or an alloy material. The material of the connection pins 111 is, for example, copper, copper-nickel alloy, etc.
[0053] The number of the fixing pins 112 may also be one or more. In the present embodiment, the number of the fixing pins 112 is preferably four. The four fixing pins 112 are preferably respectively arranged near the four corners of the base island 12. Correspondingly, the second soldering layer 126 is respectively arranged near the four corners of the base island 12. The material of the fixing pins 112 may be the same as or different from the material of the wiring pins 111. In the present embodiment, the material of the fixing pins 112 is the same as the material of the wiring pins 111.
[0054] As a preferred method, refer to Figure 1 , Figure 2 The connection pins 111 and the fixing pins 112 can be connected to the same material strip 113, and the material strip 113 can connect the connection pins 111 and the fixing pins 112 together, which not only facilitates automated production and improves production efficiency, but also avoids the position deviation of the connection pins 111 and the fixing pins 112 during the manufacturing process.
[0055] Reference Figure 1 , Figure 2 The connection pins 111 and the fixing pins 112 can also be cut from the same material strip 113, which can further improve the position accuracy of the connection pins 111 and the fixing pins 112. The cutting method includes one or more of laser cutting, stamping cutting, etc.
[0056] The material strip 113 connects the connection pin 111 and the fixed pin 112 together. When the fixed pin 112 is fixedly connected to the base island 12, that is, the relative position between the fixed pin 112 and the base island 12 is determined, the fixed pin 112 can limit the connection pin 111 through the material strip 113, thereby limiting the relative position between the connection pin 111 and the base island 12.
[0057] As a preferred method, refer to Figure 2 , Figure 7 The upper surface of the connection pin 111 is coplanar with the upper surface of the fixing pin 112, so that the thickness of the integrated circuit frame 1 can be reduced, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100. The connection pin 111 can be a flat plate structure as a whole, and the fixing pin 112 can also be a flat plate structure as a whole. The thickness of the connection pin 111 and the thickness of the fixing pin 112 are preferably the same or substantially the same, which is easier to manufacture, can reduce manufacturing costs and is easy to control accuracy.
[0058] In the present application, the wiring pin 111 is fixedly connected to the base island 12 by the first soldering layer 125, which can prevent the wiring pin 111 from being offset when subjected to external force, such as the wiring pin 111 being offset up and down or front and back, left and right during the process of welding the bonding wire 3 or the process of encapsulating the injection molding plastic package 4. The wiring pin 111 is precisely positioned, and the flatness of the wiring pin 111 is ensured, thereby improving the stability of the connection between the wiring pin 111 and the integrated circuit 2, thereby improving the quality of the product. At the same time, since the thickness of the first soldering layer 125 is relatively small, the overall thickness of the integrated circuit frame 1 can be reduced, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100. Compared with the riveting method, the second soldering layer 126 is used to fix the fixed pin 112 to the base island 12, which can not only eliminate the matching gap between the rivet hole and the rivet, but also avoid the displacement between the fixed pin 112 and the base island 12, which causes the displacement of the connection pin 111, thereby improving the stability of the connection between the connection pin 111 and the integrated circuit 2. At the same time, since the thickness of the second soldering layer 126 is relatively small, the overall thickness of the integrated circuit frame 1 can also be reduced, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100. In addition, the base island 12 and the connection pin 111 are fixedly connected by the first soldering layer 125. The first soldering layer 125 is thin and has good thermal conductivity. The heat generated by the connection pin 111 during operation can be quickly dissipated through the base island 12, further improving the heat dissipation effect.
[0059] In a specific embodiment, referring to Fig. 9 , Fig.10 The area on the base island 12 where the first soldering layer 125 is disposed may be a planar structure, and the first soldering layer 125 is disposed protruding from the surface of the base island 12. In other words, the first soldering layer 125 is directly formed on the base island 12, which is simple to operate and convenient for production.
[0060] Reference Fig.11 , Fig.12 , a first recess 128 may also be provided on the base island 12, and at least a portion of the first soldering layer 125 is filled in the first recess 128. The first recess 128 may increase the contact area between the first soldering layer 125 and the base island 12, so as to increase the bonding force between the first soldering layer 125 and the base island 12. In this embodiment, the upper surface of the first soldering layer 125 is flush with or substantially flush with the upper surface of the base island 12, that is, the upper surface of the first soldering layer 125 is flush with or substantially flush with the opening of the first recess 128, so that the overall thickness of the integrated circuit frame 1 can be further reduced, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100.
[0061] The area on the base island 12 where the second soldering layer 126 is disposed may also be a planar structure, and the second soldering layer 126 is disposed protruding from the surface of the base island 12. In other words, the second soldering layer 126 is directly formed on the base island 12, which is simple to operate and convenient for production.
[0062] A second recess (not shown) may also be provided on the base island 12, and at least a portion of the second soldering layer 126 is filled in the second recess. The second recess may increase the contact area between the second soldering layer 126 and the base island 12, so as to increase the bonding force between the second soldering layer 126 and the base island 12. In the present embodiment, the upper surface of the second soldering layer 126 is flush with or substantially flush with the upper surface of the base island 12, that is, the upper surface of the second soldering layer 126 is flush with or substantially flush with the opening of the second recess, so that the overall thickness of the integrated circuit frame 1 may be further reduced, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100.
[0063] As a preferred embodiment, a first thin film region (not shown) may be provided at a position on the surface of the base island 12 corresponding to the connection pin 111, so as to reduce the height of the connection pin 111 protruding from the base island 12. That is to say, the first thin film region is recessed in the surface of the base island 12, and a part of the connection pin 111 may be provided in the first thin film region, which not only reduces the height of the connection pin 111 protruding from the base island 12, thereby reducing the overall thickness of the integrated circuit frame 1, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100, but also adjusts the height of the upper surface of the connection pin 111 used for connecting the bonding wire 3, so that the upper surface of the connection pin 111 used for connecting the bonding wire 3 is arranged flush with the upper surface of the integrated circuit 2, so as to shorten the length of the bonding wire 3.
[0064] A second thin film region (not shown) may be provided at a position on the surface of the base island 12 corresponding to the fixing pin 112 to reduce the height of the fixing pin 112 protruding from the base island 12. That is, the second thin film region is recessed in the surface of the base island 12, and a part of the fixing pin 112 may be provided in the second thin film region, which not only reduces the height of the fixing pin 112 protruding from the base island 12, but also reduces the thickness of the integrated circuit frame 1 as a whole, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100.
[0065] A third thin film area (not shown) may be provided at a position corresponding to the integrated circuit 2 on the surface of the base island 12, and the third thin film area is used to position the integrated circuit 2. In the process of installing the integrated circuit 2 on the base island 12, the third thin film area can provide accurate positioning, thereby improving the accuracy of the installation position of the integrated circuit 2. The projection area of the third thin film area on the base island 12 is larger than the projection area of the integrated circuit 2 on the base island 12, and the fourth soldering layer 127 may be provided in the third thin film area. The third thin film area may be provided protruding from the surface of the base island 12, or may be provided recessed in the surface of the base island 12, or may be provided flush with the surface of the base island 12. In the present embodiment, the third thin film area is provided recessed in the surface of the base island 12, and a part of the integrated circuit 2 may be provided in the third thin film area, which not only reduces the height of the integrated circuit 2 protruding from the base island 12, which is conducive to the development trend of thinning and miniaturization of the semiconductor device 100, but also can adjust the height of the upper surface of the integrated circuit 2, so that the upper surface of the integrated circuit 2 is provided flush with the upper surface of the wiring pin 111 for connecting the bonding wire 3, so as to shorten the length of the bonding wire 3.
[0066] As a preferred method, refer to Figure 2 , Figure 7 The surface of the first end 1111 of the connection pin 111 may be provided with a third soldering layer 1113. The third soldering layer 1113 is, for example, a silver layer. The silver layer may be formed by electroplating or chemical plating. The third soldering layer 1113 may increase the welding performance of the connection pin 111, and is more conducive to welding the bonding wire 3 to the connection pin 111, and may enhance the stability and reliability of the connection between the bonding wire 3 and the connection pin 111. When the surface of the first end 1111 of the connection pin 111 is provided with the third soldering layer 1113, the third soldering layer 1113 is used to connect the upper surface of the bonding wire 3 to be flush with the upper surface of the integrated circuit 2, so as to shorten the length of the bonding wire 3. That is to say, the upper surface of the third soldering layer 1113 and the upper surface of the integrated circuit 2 are on the same horizontal plane, which can further shorten the distance between the upper surface of the third soldering layer 1113 and the upper surface of the integrated circuit 2, thereby further shortening the length of the bonding wire 3. This not only reduces the use of the bonding wire 3 and reduces the manufacturing cost of the product, but also shortens the signal transmission path, reduces the loss of the transmission signal, reduces the current loss, etc., thereby improving the performance of the product.
[0067] Reference Figure 3, a fourth soldering layer 127 may be provided at a position corresponding to the base island 12 and the integrated circuit 2, that is, the fourth soldering layer 127 is provided on the first surface 121 of the base island 12, and the fourth soldering layer 127 may also increase the welding performance of the base island 12, so as to increase the bonding force between the base island 12 and the integrated circuit 2, thereby enhancing the stability and reliability of the connection between the base island 12 and the integrated circuit 2. In this embodiment, after the integrated circuit 2 is welded to the fourth soldering layer 127, the upper surface of the third soldering layer 1113 on the connection pin 111 is at the same horizontal plane or approximately at the same horizontal plane as the upper surface of the integrated circuit 2, which can further shorten the distance between the upper surface of the third soldering layer 1113 and the upper surface of the integrated circuit 2, thereby further shortening the length of the bonding wire 3.
[0068] The projection area of the fourth soldering layer 127 on the base island 12 is preferably larger than the projection area of the integrated circuit 2 on the base island 12, that is, the area of the fourth soldering layer 127 is larger than the area of the integrated circuit 2, so that the integrated circuit 2 can be fully in contact with the fourth soldering layer 127, reducing the precision requirement for aligning the integrated circuit 2 with the fourth soldering layer 127, and making it easier to produce. The fourth soldering layer 127 can be formed by DPC process (Direct Plating Copper), electroplating or chemical plating, and the thickness of the fourth soldering layer 127 is 1 to 20 μm. Compared with the connection between the base island 12 and the integrated circuit 2 through silver glue, the present application no longer needs to apply and control the thickness of the silver glue, and can accurately control the precision of the combination of the integrated circuit 2 and the base island 12, greatly improving the performance and quality of the product.
[0069] The fourth soldering layer 127 is preferably a gold-tin alloy layer, which may include an adhesion layer (not shown), a barrier layer (not shown), a gold-tin layer (not shown) and a protective layer (not shown), wherein the adhesion layer is a titanium layer, the barrier layer is a platinum layer, and the protective layer is a gold layer. The adhesion layer is arranged on the upper surface of the base island 12, and the barrier layer is arranged between the adhesion layer and the gold-tin layer. The barrier layer can prevent the mutual diffusion between the gold-tin layer above the barrier layer and the adhesion layer below, causing a change in the gold-tin ratio in the gold-tin layer, thereby affecting the welding effect. Eutectic is formed between gold and tin, so that the integrated circuit 2 can be welded together by directly contacting and heating with the gold-tin alloy layer without the need for additional solder, which greatly improves the convenience of welding, thus reducing the difficulty of combining and fixing the integrated circuit 2 with the base island 12, and the combination process is faster, thereby improving the production efficiency of welding. The protective layer is plated on the outer surface of the gold-tin layer, and the protective layer is used to prevent the gold-tin layer from oxidizing.
[0070] Reference Figures 4 to 12The utility model also provides a semiconductor device 100, comprising the above-mentioned integrated circuit frame 1, integrated circuit 2 and plastic package 4, the integrated circuit 2 is arranged on the base island 12 of the integrated circuit frame 1, the integrated circuit 2 is electrically connected to the wiring pin 111 through the bonding wire 3, and is electrically connected to the external circuit through the wiring pin 111, so that the integrated circuit 2 and the external circuit can communicate with each other. The plastic package 4 can be formed by injection molding, the plastic package 4 covers at least part of the integrated circuit 2 and at least part of the integrated circuit frame 1, and at least part of the wiring pin 111 is exposed from the plastic package 4. In this embodiment, the integrated circuit 2 is completely covered by the plastic package 4, so that the integrated circuit 2 is better protected, and the second end 1112 of the wiring pin 111 is exposed from the plastic package 4 to ensure that the wiring pin 111 can be electrically connected to the external circuit.
[0071] The material of the plastic package body 4 can be a thermosetting material, and the thermosetting material is preferably epoxy resin. Epoxy resin has good bonding, sealing and heat dissipation properties, thereby achieving better packaging performance for the integrated circuit frame 1 and the integrated circuit 2.
[0072] The material of the plastic package body 4 can also be a thermoplastic material, and the thermoplastic material is preferably a liquid crystal polymer (LCP). The LCP material softens and melts when heated, has a simple molding process, good injection molding properties, and better plasticity, so it can better fix the integrated circuit frame 1 and the integrated circuit 2 together. At the same time, for the thinner the thickness of the semiconductor device 100, the better the mechanical properties of the LCP material and the higher the molding accuracy. In addition, the high temperature resistance of the semiconductor device 100 is generally required to be higher than 175 degrees, and the thermal deformation temperature of the LCP material can reach up to 400°C, so it also has good high temperature resistance.
[0073] Although the embodiments of the utility model have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the utility model. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the utility model without departing from the principles and purpose of the utility model. All of these changes should fall within the scope of protection of the claims of the utility model.
Claims
1. A thin and light integrated circuit frame, characterized in that: include: A pin rack, the pin rack comprising connection pins and fixing pins; A base island, the base island is used to carry an integrated circuit, and the wiring pins are connected to the integrated circuit through bonding wires; The base island is made of a ceramic substrate, a first soldering layer and a second soldering layer are provided on the base island, the fixed pin is fixedly connected to the base island through the first soldering layer, and the fixed pin is fixedly connected to the base island through the second soldering layer.
2. The thin and light integrated circuit frame according to claim 1, characterized in that: The area on the base island where the first soldering layer is arranged is a planar structure, and the first soldering layer is arranged protruding from the surface of the base island; or A first recess is disposed on the base island, and at least a portion of the first soldering layer is filled in the first recess.
3. The thin and light integrated circuit frame according to claim 1, characterized in that: The area on the base island where the second soldering layer is arranged is a planar structure, and the second soldering layer is arranged protruding from the surface of the base island; or A second recess is disposed on the base island, and at least a portion of the second soldering layer is filled in the second recess.
4. The thin and light integrated circuit frame according to claim 1, characterized in that: A first thin film area is provided at a position on the surface of the base island corresponding to the connection pin to reduce the height of the connection pin protruding from the base island; and / or, A second thin sheet area is provided at a position on the surface of the base island corresponding to the fixing pin, so as to reduce the height of the fixing pin protruding from the base island; and / or, A third thin film region is arranged at a position on the surface of the base island corresponding to the integrated circuit to reduce the height of the integrated circuit protruding from the base island.
5. The thin and light integrated circuit frame according to claim 1, characterized in that: The connection pin has a first end and a second end opposite to each other, the first end of the connection pin is arranged toward the integrated circuit, a third soldering layer is arranged on the surface of the first end of the connection pin, and the third soldering layer is connected to the integrated circuit through a bonding wire; and / or, A fourth soldering layer is arranged at a position of the base island corresponding to the integrated circuit to increase the bonding force between the base island and the integrated circuit.
6. The thin and light integrated circuit frame according to claim 5, characterized in that: The upper surface of the third soldering layer is flush with the upper surface of the integrated circuit to shorten the length of the bonding wire, and / or, A projection area of the fourth soldering layer on the base island is larger than a projection area of the integrated circuit on the base island.
7. The thin and light integrated circuit frame according to claim 1, characterized in that: The upper surface of the connection pin is flush with the upper surface of the fixing pin; and / or, The number of the fixing pins is four, and the four fixing pins are respectively arranged close to the four corners of the base island.
8. The thin and light integrated circuit frame according to claim 1, characterized in that: The connection pins and the fixing pins are connected to the same material strip; or, The connection pins and the fixing pins are cut from the same material strip.
9. A semiconductor device, characterized in that: It comprises an integrated circuit frame, an integrated circuit and a plastic package as described in any one of claims 1 to 8, wherein the integrated circuit is arranged on a base island of the integrated circuit frame, the plastic package covers at least part of the integrated circuit and at least part of the integrated circuit frame, and at least part of the wiring pins are exposed from the plastic package.
10. The semiconductor device according to claim 9, characterized in that The plastic package body is formed by injection molding, and the material of the plastic package body is a thermosetting material, and the thermosetting material is epoxy resin; or, The material of the plastic package body is a thermoplastic material, and the thermoplastic material is a liquid crystal polymer material.