Solid-state chip laminated capacitor formed by stacking ceramic aluminum substrates

By using ceramic aluminum substrate and metal shell sealing design in an inert gas environment, the water vapor channel problem caused by material differences in traditional sheet stacked capacitors in high temperature environments is solved, and the product's complete moisture-proof and oxidation-proof effect is achieved, which improves the reliability of the capacitor.

CN222762808UActive Publication Date: 2025-04-15SHANGHAI BAIGONG SEMICON CO LTD
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Patent Information

Application Number
CN202421432496.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-21
Publication Date
2025-04-15
Estimated Expiration
2034-06-21

AI Technical Summary

Technical Problem

In high temperature environment, traditional chip stacked capacitors have different leads and insulating resin materials, resulting in the formation of water vapor channels, affecting product performance.

Method used

The ceramic aluminum substrate is used as the base plate and sealed in an inert gas environment with the metal shell. Through the excellent performance of the ceramic aluminum substrate and the sealing design of the metal shell, the formation of water vapor channels is eliminated.

Benefits of technology

It achieves the complete moisture-proof and oxidation-proof effect of the product, and improves the reliability of the capacitor.

✦ Generated by Eureka AI based on patent content.

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Abstract

The solid-state chip laminated capacitor comprises a core, an opening of a metal shell is sealed through the ceramic aluminum substrates, two sides of the bottom of the core are respectively connected with an anode leading-out terminal and a cathode leading-out terminal, and the anode leading-out terminal and the cathode leading-out terminal are respectively connected with the metal shell. The anode leading-out terminal is provided with a first inner conductive metal electroplated layer and a first outer conductive metal electroplated layer, the cathode leading-out terminal is provided with a second inner conductive metal electroplated layer and a second outer conductive metal electroplated layer, a cavity between the core and the metal shell is filled with inert gas, the anode end of the core is coated with a first conductive metal glue layer, and the cathode end of the core is coated with a second conductive metal glue layer. And the cathode end of the core is coated with a second conductive metal adhesive layer. According to the utility model, the core takes the ceramic aluminum substrate as the bottom plate, and the metal shell is used for sealing in an inert gas filled environment after the core is carried, so that the phenomenon that the water inlet air channel is generated by the water inlet air channel due to the shrinkage ratio of materials different from the lead after insulating resin is adopted is avoided, and the effects of complete moisture prevention and oxidation prevention are achieved.
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Description

Technical Field

[0001] The utility model relates to the technical field of chip stacked capacitors, in particular to a solid-state chip stacked capacitor stacked with ceramic aluminum substrates. Background Art

[0002] The traditional method of making laminated capacitors is to coat the aluminum foil with a polymer film, and then bond the positive electrode to the copper tinned lead frame by welding and the negative electrode by conductive silver paste. Then, the multi-layer aluminum foil is wrapped with insulating resin by plastic sealing, leaving only the leads to pass through the insulating resin to connect the positive and negative electrodes of the aluminum foil to the outside world, and then bend the leads outside the insulating resin to the bottom of the package to serve as the product's solder pads. The cured insulating resin originally has holes and is risky for waterproofing. The lead frame and the insulating resin are made of different materials and have different expansion coefficients, which results in a water vapor channel between the leads and the insulating resin when used in an extremely low temperature environment. The product performance will change in an extremely low temperature environment or after being placed for a long time. Utility Model Content

[0003] In order to solve the technical problems mentioned in the background technology, the utility model provides a solid-state chip stacked capacitor stacked with a ceramic aluminum substrate.

[0004] The utility model adopts the following technical solution: a solid-state chip stacked capacitor stacked with a ceramic aluminum substrate, comprising:

[0005] A core enclosed inside a metal casing;

[0006] An opening is arranged at the bottom of the metal shell, and a metal ring arranged on the periphery of the ceramic aluminum substrate is used to seal and weld the opening in a complete circle;

[0007] The two sides of the bottom of the core are respectively connected to the anode lead terminal and the cathode lead terminal, and the anode lead terminal and the cathode lead terminal are sealed and arranged on the ceramic aluminum substrate;

[0008] The anode lead terminal comprises a first inner conductive metal plating layer and a first outer conductive metal plating layer;

[0009] The cathode lead terminal has a second inner conductive metal plating layer and a second outer conductive metal plating layer;

[0010] The first inner conductive metal plating layer and the first outer conductive metal plating layer are tightly clamped on the inner and outer sides of one end of the ceramic aluminum substrate;

[0011] The second inner conductive metal electroplating layer and the second outer conductive metal electroplating layer are tightly clamped on the inner and outer sides of the other end of the ceramic aluminum substrate;

[0012] The first inner conductive metal plating layer and the first outer conductive metal plating layer, and the second inner conductive metal plating layer and the second outer conductive metal plating layer are electrically connected by perforated metal deposition;

[0013] The cavity between the core and the metal shell is filled with an inert gas;

[0014] The anode end of the core clamps the conductive metal gasket by welding, and the positive end of the core is coated with a first conductive metal glue layer; the negative end of the core is coated with a second conductive metal glue layer.

[0015] Furthermore, the thickness of the first inner conductive metal electroplating layer is greater than that of the second inner conductive metal electroplating layer.

[0016] Compared with the prior art, the utility model has the following advantages: the solid-state chip stacked capacitor designed by the utility model is stacked with a ceramic aluminum substrate, and the core uses the ceramic aluminum substrate as the bottom plate. The ceramic aluminum substrate has good insulation, low high-frequency loss, high thermal conductivity, low thermal expansion coefficient, airtightness and packaging glue adhesion. After the core is mounted, it is sealed with a metal shell in an inert gas environment, which eliminates the phenomenon of water inlet channels caused by the use of insulating resin and the shrinkage ratio of different materials of the lead wire, so that the product is completely protected and achieves the effect of complete moisture-proof and anti-oxidation. The excellent high thermal conductivity of the ceramic aluminum substrate greatly improves the reliability of the capacitor itself. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The utility model is a cross-sectional structural schematic diagram of a solid-state chip stacked capacitor stacked with ceramic aluminum substrates.

[0018] in:

[0019] 1-core, 2-metal shell, 3-ceramic aluminum substrate, 4-first inner conductive metal electroplating layer, 5-first outer conductive metal electroplating layer, 6-second inner conductive metal electroplating layer, 7-second outer conductive metal electroplating layer, 8-first conductive metal glue layer, 9-second conductive metal glue layer, 10-inert gas, 11-conductive metal gasket, 12-metal ring. DETAILED DESCRIPTION

[0020] In order to facilitate those skilled in the art to understand the technical solution of the utility model, further description is now made with reference to the accompanying drawings. It should be understood that these descriptions are only exemplary and are not intended to limit the scope of the utility model.

[0021] In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present invention. However, it is apparent that one or more embodiments may be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present invention.

[0022] like Figure 1 The figure shows a cross-sectional structural diagram of a solid-state chip stacked capacitor stacked with a ceramic aluminum substrate of the utility model, including a core 1 encapsulated in a metal shell 2, an opening is arranged at the bottom of the metal shell 2, and a metal ring 12 arranged on the periphery of the ceramic aluminum substrate 3 is used to perform a complete circle of sealing welding around the opening. The two sides of the bottom of the core 1 are respectively connected to the anode lead terminal and the cathode lead terminal, and the anode lead terminal and the cathode lead terminal are sealed and arranged on the ceramic aluminum substrate 3.

[0023] The anode lead terminal has a first inner conductive metal plating layer 4 and a first outer conductive metal plating layer 5, and the cathode lead terminal has a second inner conductive metal plating layer 6 and a second outer conductive metal plating layer 7. The first inner conductive metal plating layer 4 and the first outer conductive metal plating layer 5 are tightly clamped on the inner and outer sides of one end of the ceramic aluminum substrate 3, and the second inner conductive metal plating layer 6 and the second outer conductive metal plating layer 7 are tightly clamped on the inner and outer sides of the other end of the ceramic aluminum substrate 3. In specific implementation, the first inner conductive metal plating layer 4 is welded to the positive terminal of the core 1, and the second inner conductive metal plating layer 6 of the cathode lead terminal 4 is bonded to the negative terminal of the core 1 through conductive paste. Except for the position of the outer conductive metal plating layer, the other parts of the ceramic aluminum substrate 3 are coated with insulating glue, etc. to enhance moisture-proof effect.

[0024] In this embodiment, the first inner conductive metal plating layer 4 and the first outer conductive metal plating layer 5, and the second inner conductive metal plating layer 6 and the second outer conductive metal plating layer 7 are electrically connected by perforating metal. In the specific implementation, in order to increase the contact area between the inner and outer conductive metal plating layers, reduce the impedance of the inner and outer conductive metal plating layers, and improve the heat dissipation speed, a plurality of small holes can be provided. The cavity between the core 1 and the metal shell 2 is filled with an inert gas 10. The anode end of the core 1 is welded to clamp a conductive metal gasket 11, and the positive end of the core 1 is coated with a first conductive metal glue layer 8 for conduction, and the negative end of the core 1 is coated with a second conductive metal glue layer 9 for conduction. The thickness of the first inner conductive metal plating layer 4 is greater than that of the second inner conductive metal plating layer 6.

[0025] The manufacturing method of the solid-state chip multilayer capacitor stacked with a ceramic aluminum substrate provided by the utility model comprises the following steps:

[0026] After stacking several single-chip elements, the anode terminal and the cathode terminal are respectively adhered with conductive metal glue, and after baking and curing, the core 1 is formed. The ceramic aluminum substrate 3 is fixed on the fixed mold, and after fixing, the core 1 is on the top and the ceramic aluminum substrate 3 is on the bottom. The core 1 is attached to the ceramic aluminum substrate 3 so that the negative terminal of the core 1 is closely attached to the second inner conductive metal electroplating layer 6 of the cathode lead terminal, and the negative terminal of the core 1 and the second inner conductive metal electroplating layer 6 of the cathode lead terminal are bonded with conductive paste. The anode terminal of the core 1 and the first inner conductive metal electroplating layer 4 of the anode lead terminal can be electrically connected by laser welding, resistance welding or anisotropic conductive glue, so as to obtain the core 1 with the ceramic aluminum substrate 3.

[0027] The core 1 with the ceramic aluminum substrate 3 obtained above is placed in an inert gas environment, and the metal shell 2 is placed on the ceramic aluminum substrate 3 with the opening facing downward, and the opening is sealed and welded in a complete circle by a metal ring 12 arranged on the outer periphery of the ceramic aluminum substrate 3. In specific implementation, the welding points at both ends are sealed and welded by welding methods such as reflow welding, laser welding, and ultrasonic welding. The metal is fused by the above welding method to form a highly airtight package, which can completely block the intrusion of water vapor.

[0028] In summary, the solid-state chip stacked capacitor designed by the utility model is stacked with a ceramic aluminum substrate. The core uses a ceramic aluminum substrate as a bottom plate. The ceramic aluminum substrate has good insulation, low high-frequency loss, high thermal conductivity, low thermal expansion coefficient, airtightness and packaging glue adhesion. After the core is mounted, it is sealed with a metal shell in an inert gas environment, which eliminates the phenomenon of water inlet channels caused by the use of insulating resin and the shrinkage ratio of different materials of the lead wire. The product is fully protected and achieves the effect of complete moisture-proof and anti-oxidation. The excellent high thermal conductivity of the ceramic aluminum substrate greatly improves the reliability of the capacitor itself.

[0029] The above embodiments are merely descriptions of the preferred implementation modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should fall within the protection scope determined by the claims of the present invention.

Claims

1. A solid-state chip stacked capacitor stacked with a ceramic aluminum substrate, characterized in that: include: A core (1) encapsulated in a metal housing (2); An opening is arranged at the bottom of the metal shell (2), and the opening is completely sealed and welded around a metal ring (12) arranged on the periphery of the ceramic aluminum substrate (3); Both sides of the bottom of the core (1) are connected to an anode lead terminal and a cathode lead terminal respectively, and the anode lead terminal and the cathode lead terminal are sealed and arranged on a ceramic aluminum substrate (3); The anode lead terminal comprises a first inner conductive metal electroplating layer (4) and a first outer conductive metal electroplating layer (5); The cathode lead terminal comprises a second inner conductive metal electroplating layer (6) and a second outer conductive metal electroplating layer (7); The first inner conductive metal electroplating layer (4) and the first outer conductive metal electroplating layer (5) are tightly clamped on the inner and outer sides of one end of the ceramic aluminum substrate (3); The second inner conductive metal electroplating layer (6) and the second outer conductive metal electroplating layer (7) are tightly clamped on the inner and outer sides of the other end of the ceramic aluminum substrate (3); The first inner conductive metal electroplating layer (4) and the first outer conductive metal electroplating layer (5), and the second inner conductive metal electroplating layer (6) and the second outer conductive metal electroplating layer (7) are electrically connected by means of perforated metal deposition; The cavity between the core (1) and the metal shell (2) is filled with an inert gas (10); The anode end of the core (1) clamps a conductive metal gasket (11) by welding, and the positive end of the core (1) is coated with a first conductive metal glue layer (8); the negative end of the core (1) is coated with a second conductive metal glue layer (9).

2. The solid-state chip multilayer capacitor stacked with a ceramic aluminum substrate according to claim 1, characterized in that: The first inner conductive metal electroplating layer (4) is thicker than the second inner conductive metal electroplating layer (6).