Continuous production device for single-walled carbon nanotubes
By using plasma cracking furnace and double electrode gun technology in the single-wall carbon nanotube production device, the problem of difficult removal of carbonaceous impurities and metal catalysts is solved, and the continuous production and efficient utilization of high-purity single-wall carbon nanotubes are achieved.
Patent Information
- Application Number
- CN202421555216.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-02
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2034-07-02
AI Technical Summary
The prior art has problems in the production process of single-wall carbon nanotubes that are difficult to remove carbonaceous impurities and metal catalysts, which limits their application in the electronics field.
A continuous production device for single-wall carbon nanotubes was designed, using plasma cracking furnace and double-electrode gun technology. Through the action of plasma, the efficient growth of carbon nanotubes and the full evaporation of catalysts are achieved, and the production of amorphous carbon is avoided.
The continuous production of high-purity single-wall carbon nanotubes has been achieved, the utilization rate of catalysts and raw materials has been improved, the product quality is stable, and it is suitable for large-scale industrial production.
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Figure CN222766269U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a continuous production device for single-walled carbon nanotubes, belonging to the technical field of plasma enhanced chemical vapor deposition devices. Background Art
[0002] Single-walled carbon nanotubes (SWCNTs) have attracted great attention due to their unique electronic, thermal, mechanical and chemical properties and a wide range of potential applications. Developing an effective method for large-scale production of high-purity SWCNTs is currently being widely studied. Methods for producing SWCNTs include chemical vapor deposition, arc discharge, laser ablation, etc.
[0003] The arc discharge method combines many advantages, such as low cost, large scale, high crystallinity and narrow diameter distribution, for industrial applications. However, there are many carbon impurities and metal catalysts that are difficult to remove in the SWCNTs synthesized by the arc discharge method. This difficulty limits their further application, especially in the field of electronics. The laser evaporation method uses high-energy laser evaporation to prepare single-walled carbon nanotubes from a carbon target doped with a metal catalyst. The single-walled carbon nanotubes prepared by this method have a high degree of crystallization, but its equipment is complex, the operation is cumbersome, the cost is high, and the yield is low. The chemical vapor deposition method for preparing single-walled carbon nanotubes is simple to operate, the process is controllable, and the growth temperature is relatively low, the cost is low, and continuous production can be achieved. It is currently a commonly used method.
[0004] The thermal plasma method reproduces the conditions prevalent in arc discharge and laser ablation methods, but uses carbon-containing gases instead of graphite vapor to provide the necessary elements, making the growth of single-walled carbon nanotubes more efficient, decomposing the gas can consume less energy than graphite evaporation, and the process cost is lower.
[0005] Induction thermal plasma technology has great prospects in the large-scale production of SWCNTs and their practical applications, but the grown SWCNTs have been shown to contain a large amount of amorphous carbon, and the equipment cannot be produced continuously, which limits its wide application. Therefore, a device that can continuously produce high-purity single-walled carbon nanotubes is urgently needed. Utility Model Content
[0006] In order to solve the above problems, the utility model provides a continuous production device for single-walled carbon nanotubes, the device comprising: a raw material feeding unit, a reaction unit, a cooling unit and a product collecting unit; the raw material feeding unit is used to feed the raw material into the reaction unit, and the product generated by the reaction unit passes through the cooling unit and enters the product collecting unit;
[0007] The reaction unit includes: a plasma cracking furnace 2, in which a first cathode 3, a first anode 5, a second cathode 4, and a second anode 6 are arranged, the first cathode 3 and the first anode 5 are connected to a first plasma power supply 7, and the second cathode 4 and the second anode 6 are connected to a second plasma power supply 8.
[0008] In one embodiment, the raw material feeding unit includes: a uniform speed powder feeder 1.
[0009] In one embodiment, the cooling unit includes: a water-cooled interlayer cooling tank 9.
[0010] In one embodiment, the product collection unit includes: a bubbling collection tank 10 and a filter press 11, wherein the bubbling collection tank 10 and the filter press 11 are connected, and the filter press 11 includes a material receiving tank, and the material receiving tank is used to collect the product.
[0011] In one embodiment, the raw material feeding unit is connected to a carrier gas generator for storing and generating carrier gas.
[0012] In one embodiment, the bubbling collection tank 10 is also connected to an exhaust pipe.
[0013] In one embodiment, the plasma cracking furnace 2 is further connected to an inert gas generator.
[0014] In one embodiment, the cooling unit further includes a cooling water circulation pipeline.
[0015] Advantages of the utility model:
[0016] The device uses a dual-electrode gun, which can achieve greater power and higher temperature. During the production of single-walled carbon nanotubes, the amount of catalyst used is small, so that the catalyst in the plasma cracking furnace can be fully evaporated; the required carbon source ratio is low, and the dual-electrode gun can achieve a larger airflow velocity, thus avoiding the production of amorphous carbon.
[0017] Therefore, the single-walled carbon nanotube continuous production device of the utility model does not require crucible evaporation, can continuously produce carbon nanotubes, and can improve the utilization rate of catalysts and raw materials. The carbon nanotubes obtained when the utility model device is used to continuously prepare carbon nanotubes have high purity and stable product quality, and are suitable for industrial large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 It is a schematic structural diagram of a continuous production device for single-walled carbon nanotubes of the present invention.
[0019] Among them: 1. uniform speed powder feeder; 2. plasma cracking furnace; 3. cathode; 4. cathode; 5. anode; 6. anode; 7. plasma power supply; 8. plasma power supply; 9. water-cooled interlayer cooling tank; 10. bubbling collection tank; 11. filter press. DETAILED DESCRIPTION
[0020] The following is a specific description of the utility model.
[0021] Example 1
[0022] This embodiment provides a single-walled carbon nanotube production device, such as Figure 1 As shown, it includes a uniform speed powder feeder 1, a plasma cracking furnace 2, the plasma electric furnace 2 includes two cathodes 3 and cathode 4, an anode 5 and an anode 6; the plasma cracking furnace 2 is connected to a plasma power supply 7 and a plasma power supply 8; the plasma cracking furnace 2 is connected to a water-cooled interlayer cooling tank 9, and the cooling water circulates into a bubbling collection tank 10; the bubbling collection tank 10 is connected to a filter press 11, and returns to the bubbling collection tank 10 after filtration.
[0023] The carrier gas, carbon source and catalyst raw material are introduced into the uniform powder feeder 1, which is connected to the plasma cracking furnace 2 and connected to the plasma power supply 7 and the plasma power supply 8. The cathode 3, cathode 4 and the anode 5, anode 6 generate an arc, and the arc can fully generate plasma in the plasma cracking furnace 2. The catalyst is fully contacted with the two arcs to excite the plasma state and is fully evaporated. After contacting with the carbon source, the catalyst generates a single-walled carbon nanotube and enters the water-cooled interlayer cooling tank 9. After the product enters the bubbling collection tank 10, the suspension containing the product is filtered and collected by the filter press 11. Finally, in the bubbling collection tank 10, the gas is discharged through the exhaust pipe of the bubbling collection tank 10; this device does not require equipment such as crucible evaporation, which saves costs; the carrier gas carbon source and the catalyst raw material directly react through the electrode, which conforms to gas dynamics, is not easy to be blocked, and is not easy to produce amorphous carbon. Moreover, the reaction can occur continuously, avoiding the product from being insufficiently reacted and accumulated in the plasma cracking furnace 2.
[0024] Although the present invention has been disclosed as above in terms of preferred embodiments, it is not intended to limit the present invention. Anyone familiar with the technology may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the definition of the claims.
Claims
1. A continuous production device for single-walled carbon nanotubes, characterized in that: The device comprises: a raw material feeding unit, a reaction unit, a cooling unit and a product collecting unit; the raw material feeding unit is used to feed the raw material into the reaction unit, and the product generated by the reaction unit passes through the cooling unit and enters the product collecting unit; The reaction unit comprises: a plasma cracking furnace (2), wherein a first cathode (3), a first anode (5), a second cathode (4), and a second anode (6) are arranged in the plasma cracking furnace (2), the first cathode (3) and the first anode (5) are connected to a first plasma power supply (7), and the second cathode (4) and the second anode (6) are connected to a second plasma power supply (8).
2. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The raw material feeding unit comprises: a uniform speed powder feeder (1).
3. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The cooling unit comprises: a water-cooled interlayer cooling tank (9).
4. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The product collection unit comprises: a bubbling collection tank (10) and a filter press (11), wherein the bubbling collection tank (10) and the filter press (11) are connected, and the filter press (11) comprises a material receiving tank, and the material receiving tank is used to collect the product.
5. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The raw material feeding unit is connected with a carrier gas generator for storing and generating carrier gas.
6. The continuous production device of single-walled carbon nanotubes according to claim 4, characterized in that: The bubbling collection tank (10) is also connected to an exhaust pipe.
7. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The plasma cracking furnace (2) is also connected to an inert gas generator.
8. The continuous production device of single-walled carbon nanotubes according to claim 1, characterized in that: The cooling unit also includes a cooling water circulation pipeline.
Citation Information
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