Blocking piece device and semiconductor equipment

Abstract

The utility model provides a separation blade device and semiconductor equipment. The separation blade device is provided with a mechanical arm and a separation blade box arranged outside a reaction cavity; the baffle plate box is communicated with the internal space of the reaction cavity, and a baffle plate for warming up is arranged in the baffle plate box; and the mechanical arm is used for conveying the separation blade in the separation blade box to the internal space of the reaction cavity and placing the separation blade on the heater for warming. According to the technical scheme, the blocking piece is used for replacing a wafer control blocking piece for warming up, so that the stability of the product process is ensured, low-cost ALD warming up is realized, the blocking piece is conveyed between the blocking piece box and the inner space of the reaction cavity through the mechanical arm, and the production efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor equipment, in particular to a baffle device and semiconductor equipment. Background Art

[0002] In the metal atomic layer deposition (ALD) process, the stability of the chamber environment and the control of the saturated vapor pressure of the precursor (required for the metal atomic layer deposition process) are crucial to the generation of high-quality, uniformly thick films. However, when the chamber is reactivated after being idle for a period of time, due to various factors, such as changes in the saturated vapor pressure of the precursor or the cooling of the chamber itself, the film thickness in the ALD process may be too high or too low, which directly affects the stability and performance of the product.

[0003] Specifically, the saturated vapor pressure of a precursor is its vapor pressure when it reaches a saturated state at a specific temperature and pressure. When the chamber is idle, the saturated vapor pressure of the precursor decreases due to the drop in temperature. When the chamber is reheated to the operating temperature, it takes a certain amount of time for the saturated vapor pressure of the precursor to reach a stable state. During this period, the instability of the precursor vapor pressure will cause deviations in the thickness of the deposited film. In addition, condensates or residues that may be generated during the cooling of the chamber may also have a negative impact on the ALD process. These residues may change the chemical properties of the chamber surface and affect the reaction process between the precursor and the substrate, resulting in uneven film thickness or defects.

[0004] To solve this problem, the traditional method is to use wafers to warm up the chamber after the chamber has been idle for a period of time. The purpose of this process is to actually run the metal atomic layer deposition process by consuming some wafers, and to pull the unstable external factors (such as temperature, vapor pressure, etc.) in the early stage to a normal state to ensure the stability and quality of subsequent products. However, this method not only increases production costs (including wafer consumption and additional operating time), but may also affect the operating logic and efficiency of the entire production line, and the wafers used for warming up will also occupy public paths and affect the production efficiency of other products.

[0005] Therefore, there is an urgent need for a baffle device and a semiconductor device to improve the above problems. Utility Model Content

[0006] The utility model aims to provide a baffle device and a semiconductor device, which can realize low-cost ALD warm-up.

[0007] In a first aspect, the utility model provides a baffle device for a semiconductor device, the semiconductor device comprising a reaction chamber and a heater disposed in the reaction chamber, and comprising a robot arm and a baffle box disposed outside the reaction chamber;

[0008] The baffle box is in communication with the inner space of the reaction chamber, and a baffle for warming up is arranged in the baffle box;

[0009] The robot arm is used to transfer the baffles in the baffle box to the inner space of the reaction chamber and place them on the heater for warming up.

[0010] The beneficial effects of the utility model are as follows: by setting a mechanical arm and a baffle box outside the reaction chamber; the baffle box is connected to the internal space of the reaction chamber, and a baffle for warming up is arranged in the baffle box; the mechanical arm is used to transfer the baffle in the baffle box to the internal space of the reaction chamber, and place it on the heater for warming up. The baffle is used to replace the wafer control baffle for warming up, so as to ensure the stability of the product process, realize low-cost ALD warming up, and the baffle is transferred between the baffle box and the internal space of the reaction chamber by the mechanical arm, so as to improve the production efficiency.

[0011] Optionally, the reaction chamber is provided with a wafer inlet and a baffle inlet respectively;

[0012] The wafer inlet and outlet are used to transfer wafers;

[0013] The baffle inlet and outlet are used to transport the baffle;

[0014] The baffle box is connected to the internal space of the reaction chamber through the baffle inlet and outlet. The beneficial effect is that by adding a baffle inlet and outlet to the reaction chamber where the wafer inlet and outlet are already set, and using the baffle inlet and outlet to transfer the baffle, there is no need to occupy the public path, and the production of other products will not be affected, thereby improving production efficiency.

[0015] Optionally, it also includes a first air curtain device;

[0016] The first air curtain device is located at the inlet and outlet of the baffle plate, and is used to generate a first air curtain to block the reaction gas in the internal space of the reaction chamber from entering the baffle box. The beneficial effect is that by adding the first air curtain device at the inlet and outlet of the baffle plate to generate the first air curtain, the reaction chamber and the baffle box are isolated, and the baffle box space is prevented from being deposited.

[0017] Optionally, it also includes a first flow control valve;

[0018] The first flow control valve is connected to the first air curtain device and is used to control the strength of the first air curtain generated by the first air curtain device. The beneficial effect is that by setting to control the strength of the first air curtain generated by the first air curtain device, the air curtain can be adjusted according to actual needs, and the isolation effect between the reaction chamber and the baffle box can be further improved.

[0019] Optionally, a controller is also included;

[0020] The controller is electrically connected to the first flow control valve, and is used to control the strength of the first air curtain generated by the first air curtain device through the first flow control valve. The beneficial effect is that by setting the controller, it is convenient for the user to adjust the strength of the first air curtain according to actual needs during use.

[0021] Optionally, a sensor is also included;

[0022] The sensor is arranged in the baffle box and is used to detect the position of the baffle in the baffle box;

[0023] The sensor is electrically connected to the controller;

[0024] The controller is further used to adjust the working state of the heater and the strength of the first air curtain according to the position of the baffle detected by the sensor. The beneficial effect is that by arranging a sensor in the baffle box to detect the position of the baffle, it is not only possible to detect whether the baffle is placed in the reaction chamber, but also the sensor and the controller are electrically connected, so that the working state of the heater and the strength of the first air curtain can be adjusted according to actual needs.

[0025] Optionally, the baffle box is detachably connected to the reaction chamber. The beneficial effect is that by arranging the baffle box and the reaction chamber to be detachable, it is easy to install, disassemble and maintain the baffle box, or to clean, maintain or replace the baffles in the baffle box.

[0026] Optionally, the detachable connection is a snap connection or a connection through cooperation between a slide groove and a slide rail.

[0027] Optionally, the surface of the baffle is provided with a laser-clad aluminum oxide layer. The beneficial effect is that the aluminum oxide layer is formed by laser cladding to ensure roughness and prevent the surface of the baffle from falling off, thereby preventing particles from falling off and causing pollution to the machine chamber.

[0028] In a second aspect, the utility model further provides a semiconductor device, comprising the baffle device of any possible combination of the first aspect, a reaction chamber and a heater disposed in the reaction chamber;

[0029] The baffle box is in communication with the inner space of the reaction chamber, and a baffle for warming up is arranged in the baffle box;

[0030] The robot arm is used to transfer the baffles in the baffle box to the inner space of the reaction chamber and place them on the heater for warming up;

[0031] A heater is provided in the reaction chamber, and the heater is used to carry a wafer or a baffle.

[0032] For the beneficial effects of the second aspect, reference may be made to the description of the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic diagram of the structure of a baffle device provided in an embodiment of the utility model;

[0034] Figure 2 A schematic structural diagram of a warm-up state of a baffle device provided by an embodiment of the utility model;

[0035] Figure 3 A schematic diagram of the internal structure of the baffle device provided in an embodiment of the utility model;

[0036] Figure 4 A schematic diagram of the internal structure of the baffle device provided by an embodiment of the utility model in a warm-up state;

[0037] Figure 5 This is a schematic diagram of a baffle device provided in an embodiment of the utility model.

[0038] Description of reference numerals:

[0039] 1. Reaction chamber; 2. Heater; 3. Robotic arm; 4. Baffle box; 5. Baffle; 6. First air curtain device; 7. First air curtain; 8. First flow control valve; 9. Second flow control valve; 10. Second air curtain device; 11. Second air curtain; 12. Positive pressure gas source; 13. Wafer inlet and outlet; 14. Baffle inlet and outlet; 15. Gas pipeline; 16. Shower head; 17. Process kit; 18. Controller; 19. Sensor. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described in conjunction with the drawings of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in the field without creative work belong to the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with general skills in the field to which the utility model belongs. The technical solutions in the embodiments of the utility model are described below in conjunction with the drawings in the embodiments of the utility model. Among them, in the description of the embodiments of the utility model, the terms used in the following embodiments are only for the purpose of describing specific embodiments, and are not intended to be used as limitations on the utility model. As used in the specification of the utility model and the attached claims, the singular expressions "a", "said", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear indication to the contrary in the context. It should also be understood that in the following embodiments of the utility model, "at least one", "one or more" refer to one or more (including two). The term "and / or" is used to describe the association relationship of associated objects, indicating that there can be three relationships; for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0041] Reference to "one embodiment" or "some embodiments" described in this specification means that one or more embodiments of the utility model include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the sentences "in one embodiment", "in some embodiments", "in some other embodiments", and "in some other embodiments" that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways. The term "connection" includes direct connection and indirect connection, unless otherwise specified. "First" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0042] In the embodiments of the present invention, "exemplarily" or "for example" is used to indicate an example, illustration or description. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of "exemplarily" or "for example" is intended to present the relevant concepts in a specific way.

[0043] In view of the problems existing in the existing technology, such as Figure 1-4 As shown, the utility model provides a baffle device for semiconductor equipment, the semiconductor equipment includes a reaction chamber 1 (such as an ALD deposition chamber), a gas pipeline 15 (Gasline), and a heater 2 (Heater) and a shower head 16 (Showerhead) arranged in the reaction chamber 1, the baffle device includes a robot arm 3 and a baffle box 4 arranged (such as detachably connected) outside the reaction chamber 1; the baffle box 4 is connected to the internal space of the reaction chamber 1 (such as a window is opened at a position outside the wafer inlet and outlet 13 of the reaction chamber 1 as a baffle inlet and outlet 14), the baffle The box 4 is provided with one or more baffles 5 for warming up (the specific number can be adjusted according to actual needs); the reaction chamber 1 is respectively provided with a wafer inlet and outlet 13 and a baffle inlet and outlet 14; the wafer inlet and outlet 13 is used to transfer wafers; the baffle inlet and outlet 14 is used to transfer the baffle 5; the baffle box 4 is connected with the internal space of the reaction chamber 1 through the baffle inlet and outlet 14; the robot arm 3 is used to transfer the baffle 5 in the baffle box 4 to the internal space of the reaction chamber 1, and place it on the heater 2 for warming up. The working process of the baffle device of the utility model is as follows: the wafer to be processed is transferred from Figure 1 The wafer inlet and outlet 13 shown enters the reaction chamber 1 and is placed above the heater 2. Figure 3 The reaction gas introduced into the gas pipeline 15 in the reaction chamber 1 is sprayed onto the upper surface of the wafer to be processed through the shower head 16 above the reaction chamber 1 to perform the metal atomic layer deposition process on the wafer. The processed wafer is removed from the wafer inlet and outlet 13, and a new wafer is moved in to perform the metal atomic layer deposition process until the processing of the current batch of wafers is completed. At this time, the reaction chamber 1 will enter an idle state. Figure 2 and Figure 4 The robot arm 3 shown in the figure works, and moves the baffle 5 in the baffle box 4 from the baffle inlet and outlet 14 to the top of the heater 2 to replace the wafer (or wafer control baffle) for metal atomic layer deposition process, so as to ensure the stability of the product process and realize low-cost ALD warm-up. In addition, the setting of the baffle inlet and outlet 14 makes it possible for the transmission of the baffle 5 to not occupy the public path (in the prior art, the wafer control baffle enters from the wafer inlet and outlet 13 for warm-up, so the transmission of the wafer control baffle will occupy the public path) and cooperates with the robot arm 3 to improve production efficiency. Among them, as Figure 2 and Figure 3 As shown, process kits 17 can also be set at the wafer inlet and outlet 13 and the baffle inlet and outlet 14. The process kit 17 is composed of mechanical parts such as sealing rings, which are used to form mechanical isolation between the reaction chamber 1 and the baffle box 4 / external space. It is worth noting that due to the limitation of the internal structure of the ALD deposition chamber, the position of the robot arm 3 is preferably set in the baffle box 4 and connected to the baffle box 4 through a motor. The motor (not shown) is used to drive the robot arm 3 to move.

[0044] In some embodiments, in order to prevent the space of the baffle box 4 from being deposited, as shown in FIG. Figure 1 As shown, the baffle device further includes a first air curtain device 6; the first air curtain device 6 is located at the baffle inlet and outlet 14, and is used to generate a first air curtain 7 to block the reaction gas in the internal space of the reaction chamber 1 from entering the baffle box 4. For example, Figure 1 and Figure 3 As shown, an air curtain device can be added on the basis of setting the process kit 17 to overcome the leakage caused by the gap existing in the mechanical structure matching.

[0045] In some specific embodiments, in order to further improve the isolation effect between the reaction chamber 1 and the baffle box 4, the baffle device further includes a first flow control valve 8; the first flow control valve 8 is connected to the first air curtain device 6, and is used to control the strength of the first air curtain 7 generated by the first air curtain device 6 (such as adjusting the appropriate strength according to the changes in the process, ensuring the isolation effect while reducing energy consumption, or increasing the air curtain strength when the baffle is in and out to ensure the isolation effect). For example, Figure 1 As shown, the baffle device also includes a positive pressure gas source 12, a first flow control valve 8, a second flow control valve 9, a first air curtain device 6 and a second air curtain device 10. One branch of the positive pressure gas source 12 is connected to the first air curtain device 6 through the first flow control valve 8, and the other branch is connected to the second air curtain device 10 through the second flow control valve 9, so as to respectively generate the first air curtain 7 and the second air curtain 11 (generated by the second air curtain device 10 to prevent the reaction gas from leaking from the wafer inlet and outlet 13).

[0046] In other specific embodiments, in order to facilitate the user to adjust the strength of the first air curtain 7 according to actual needs, such as Figure 5 As shown, the baffle device also includes a controller 18 ; the controller 18 is electrically connected to the first flow control valve 8 , and is used to control the strength of the first air curtain 7 generated by the first air curtain device 6 through the first flow control valve 8 .

[0047] In some specific embodiments, in order to detect whether the baffle 5 is placed in the reaction chamber, and adjust the working state of the heater 2 and the strength of the first air curtain 7 according to actual needs, as shown in FIG. Figure 5 As shown, the baffle device further includes a sensor 19 (such as a photoelectric sensor or an infrared sensor); the sensor 19 is disposed in the baffle box 4 and is used to detect the position of the baffle 5 in the baffle box 4; the sensor 19 is electrically connected to the controller 18; the controller 18 is further used to adjust the working state of the heater 2 and the strength of the first air curtain 7 according to the position of the baffle 5 detected by the sensor 19. In order to ensure the accuracy of the sensor 19 in detecting the position of the baffle 5, the sensor 19 is preferably disposed below the robot arm 3.

[0048] In some specific embodiments, in order to facilitate installation, removal and maintenance of the baffle box 4, or cleaning, maintenance or replacement of the baffle 5 in the baffle box 4, the detachable connection is a snap connection or a connection through the cooperation of a slide groove and a slide rail. It should be understood that the detachable connection can also be other connection methods such as a threaded connection.

[0049] In some embodiments, in order to ensure the roughness (specifically, the roughness of the aluminum oxide layer can be changed by adjusting the laser cladding time parameters), ensure that the surface of the baffle 5 does not fall off (the roughness of the aluminum oxide layer is determined by the deposition of the metal atomic layer), and prevent the particles from falling off and causing pollution to the machine chamber, the surface of the baffle 5 is provided with a laser-clad aluminum oxide layer.

[0050] Based on the above-mentioned baffle device, the utility model also provides a semiconductor device, including Figure 1-5 The baffle device shown in the figure, a reaction chamber 1 (such as an ALD deposition chamber), a gas line 15 (Gasline), and a heater 2 (Heater) and a shower head 16 (Showerhead) arranged in the reaction chamber 1; the baffle box 4 is connected to the internal space of the reaction chamber 1, and the baffle box 4 is provided with a baffle 5 for warming up; the robot arm 3 is used to transfer the baffle 5 in the baffle box 4 to the internal space of the reaction chamber 1 and place it on the heater 2 for warming up; the reaction chamber 1 is provided with There is a heater 2, and the heater 2 is used to carry a wafer or a baffle 5. When the metal atomic layer deposition on the wafer to be processed is completed and is about to enter an idle state, the robot arm 3 works to move the baffle 5 in the baffle box 4 from the baffle inlet and outlet 14 to the top of the heater 2 to replace the wafer (or wafer control baffle) for the metal atomic layer deposition process, so as to ensure the stability of the product process and realize low-cost ALD warm-up. Moreover, the setting of the baffle inlet and outlet 14 makes it possible for the transmission of the baffle 5 to not occupy the public path and cooperate with the robot arm 3, thereby improving production efficiency.

[0051] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A baffle device for a semiconductor device, wherein the semiconductor device comprises a reaction chamber and a heater disposed in the reaction chamber, wherein: It includes a mechanical arm and a film blocking box arranged outside the reaction chamber; The baffle box is in communication with the inner space of the reaction chamber, and a baffle for warming up is arranged in the baffle box; The robot arm is used to transfer the baffles in the baffle box to the inner space of the reaction chamber and place them on the heater for warming up.

2. The device according to claim 1, characterized in that The reaction chamber is provided with a wafer inlet and a baffle inlet respectively; The wafer inlet and outlet are used to transfer wafers; The baffle inlet and outlet are used to transport the baffle; The baffle box is connected to the inner space of the reaction chamber through the baffle inlet and outlet.

3. The device according to claim 2, characterized in that Also included is a first air curtain device; The first air curtain device is located at the inlet and outlet of the baffle plate, and is used to generate a first air curtain to block the reaction gas in the inner space of the reaction chamber from entering the baffle plate box.

4. The device according to claim 3, characterized in that Also included is a first flow control valve; The first flow control valve is connected to the first air curtain device and is used to control the strength of the first air curtain generated by the first air curtain device.

5. The device according to claim 4, characterized in that Also includes a controller; The controller is electrically connected to the first flow control valve, and is used to control the strength of the first air curtain generated by the first air curtain device through the first flow control valve.

6. The device according to claim 5, characterized in that Also includes sensors; The sensor is arranged in the baffle box and is used to detect the position of the baffle in the baffle box; The sensor is electrically connected to the controller; The controller is further used to adjust the working state of the heater and the strength of the first air curtain according to the position of the baffle detected by the sensor.

7. The device according to claim 1, characterized in that The baffle box is detachably connected to the reaction chamber.

8. The device according to claim 7, characterized in that The detachable connection is a snap connection or a connection through the cooperation between a slide groove and a slide rail.

9. The device according to any one of claims 1 to 8, characterized in that: The surface of the baffle is provided with a laser-clad aluminum oxide layer.

10. A semiconductor device, characterized in that: The method comprises the baffle device as claimed in any one of claims 1 to 9, and a reaction chamber and a heater disposed in the reaction chamber; The baffle box is in communication with the inner space of the reaction chamber, and a baffle for warming up is arranged in the baffle box; The robot arm is used to transfer the baffles in the baffle box to the inner space of the reaction chamber and place them on the heater for warming up; A heater is provided in the reaction chamber, and the heater is used to carry a wafer or a baffle.

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