Power module having super-efficient heat dissipation performance and comprising independent packaging device
By designing multiple heat dissipation channels and conductive heat dissipation parts in the IGBT/SiC power module and adopting independent packaged devices, the existing modules have solved the problems of module scrapping due to poor heat dissipation capabilities, low integration and chip failure, thus achieving more efficient heat dissipation, higher integration and higher yield.
Patent Information
- Application Number
- CN202421591554.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-08
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2034-07-08
AI Technical Summary
The existing IGBT/SiC power modules have poor heat dissipation capabilities, resulting in low efficiency when working in high temperature environments, and the internal temperature of the module makes the integration low, and chip failure will lead to the scrapping of the entire module.
A power module including independent packaged devices is designed. By setting up multiple heat dissipation channels inside the module, electrically connecting the conductive heat dissipation parts to the back of the chip to achieve double-sided heat dissipation of the chip. Through the design of independent packaged devices, each chip is individually packaged and connected to avoid the problem of chip failure causing the scrapping of the entire module.
It improves the heat dissipation ability of the module, reduces the internal temperature, enhances the integration, improves the yield of the chip, and can be replaced directly when there is a problem with one chip without affecting the operation of the entire module.
Smart Images
Figure CN222775316U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a power module with ultra-high efficiency heat dissipation performance and comprising independent packaging devices. Background Art
[0002] In the contemporary world, IGBT / SiC power modules are undoubtedly a shining star. They have an irreplaceable position in the fields of power control, energy replacement and industrial applications. In the field of electric vehicles, IGBT / SiC power modules act as key components in the drive system, helping to transfer electric energy from batteries to motors and achieve efficient energy conversion; in solar and wind power generation, IGBT / SiC power modules convert DC power into AC power, inject renewable energy into the power grid, and contribute to the popularization of clean energy. In industrial automation, IGBT / SiC power modules are used for motor control and variable frequency speed regulation, which improves production efficiency and energy utilization. However, behind all this is the long development process of IGBT / SiC power modules. Both IGBT and SiC have overcome many technical obstacles. In the 1980s, with the continuous advancement of semiconductor material technology, high voltage and high current have been improved. The advancement of manufacturing technology has also improved the stability and consistency of devices. Future development focuses on improving efficiency, reducing losses, improving integration and adapting to more application scenarios.
[0003] High frequency and high temperature applications: With the advancement of communication technology, the demand for frequency switching performance is increasing. The performance optimization of IGBT / SiC power modules has become an important research direction to meet the needs of fields such as RF. At the same time, the ability to work in high temperature environments is also a key point. If working at high temperatures, the heat dissipation capacity should be improved to adapt to more demanding application conditions.
[0004] Integration and miniaturization: With the advancement of technology, the requirements for device size and integration are getting higher and higher. In the future, IGBT technology will develop in the direction of miniaturization and high integration, or be gradually replaced by SiC to achieve more compact circuit design and more efficient energy conversion.
[0005] Higher processing yield: For example, in SiC module production, the yield loss cost accounts for 20% of the finished product. In addition, SiC chips are expensive and difficult to produce, which is not conducive to mass production. Therefore, if innovation is to overcome the problem that a bad chip will scrap the entire module, this also needs to be solved.
[0006] After summarizing, there are the following deficiencies:
[0007] 1. In addition to external heat dissipation devices, the heat dissipation capacity of the module itself also requires more heat dissipation channels. The traditional IGBT / SiC power module has only one heat dissipation channel and has poor heat dissipation capacity.
[0008] 2 Due to the high internal temperature of the module, other devices such as the control circuit board cannot be integrated with the module and need to be equipped separately; if the product temperature can be reduced, the integration can be improved;
[0009] 3. The chips are uniformly welded and connected in the module. If one chip has a problem, the entire module will be scrapped.
[0010] Therefore, the focus is very clear. Improving heat dissipation and increasing the yield rate have become urgent tasks to be solved. Utility Model Content
[0011] In view of the above technical problems, the purpose of this utility model patent is to provide a power module including independent packaged devices with ultra-high efficiency heat dissipation performance.
[0012] It includes a tube shell, a substrate and at least one unit module;
[0013] The substrate is disposed in the tube shell;
[0014] The unit module includes at least one independent packaging device and a conductive heat dissipation member;
[0015] The independent packaged device comprises a conductive support, at least one chip and a plastic package;
[0016] At least one of the chips is mounted on the conductive support by flip-flopping through a conductive medium and is electrically connected to a corresponding pin on the conductive support;
[0017] The plastic package body covers the entire independent package device, and the back sides of all the chips and the pins on the conductive bracket are exposed outside the plastic package body;
[0018] The conductive heat sink is mounted on the back of the chips in all the independent packaged devices through a conductive medium and is electrically connected to the back of the chips respectively;
[0019] The pins in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate.
[0020] Preferably, an insulating protective layer is provided on the tube shell, and the back side of the conductive heat sink and / or the chip is located inside or outside the insulating protective layer.
[0021] Specifically, the chip in the independently packaged device may be one or more combinations of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0022] Optionally, one or more of passive components, active components and sensors are provided on the substrate according to electrical function requirements.
[0023] Preferably, the insulating protective layer is a protective glue.
[0024] Preferably, the number of chips in the independently packaged device is 1.
[0025] Preferably, the conductive heat sink is electrically connected to corresponding pins on the substrate.
[0026] Optionally, the conductive heat sink is a copper plate.
[0027] Optionally, the conductive heat sink is a plurality of conductive needles, and the back side of each chip is connected to one of the conductive needles via a conductive medium.
[0028] The power module of the utility model with ultra-high efficiency heat dissipation performance and including independent packaged devices has the following advantages compared with the prior art:
[0029] (1) Each independently packaged device is packaged separately, and the chips are all packaged upside down. All types of chips are independently packaged according to this scheme; all independently packaged devices are installed in the module according to electrical requirements, and the electrical output is connected and led out using conductive components;
[0030] (2) The above-mentioned change in the power module structure results in a shorter process flow, fewer material varieties, and a shorter production cycle;
[0031] (3) Reducing the size of packaged devices is more conducive to improving the yield rate. After each device is packaged separately, it can be screened and placed in the module, ensuring that each product is a good product and improving the yield rate of the module. If there is a problem with a device, it can be directly removed and replaced with a new one without scrapping the entire module. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 This is a schematic structural diagram of a power module with ultra-high efficiency heat dissipation performance including independent packaging components according to the present embodiment;
[0033] Figure 2 is a schematic structural diagram of a unit module in this embodiment;
[0034] Figure 3 is a cross-sectional schematic diagram of a unit module in this embodiment;
[0035] Figure 4 is a cross-sectional schematic diagram of an independent packaged device 3 in this embodiment;
[0036] Figure 5 is a cross-sectional schematic diagram of an independent packaged device 4 in this embodiment;
[0037] Figure 6 Schematic cross-sectional view of a diode and a transistor included in the independently packaged device in this embodiment;
[0038] Figure 7 is a cross-sectional schematic diagram of a unit module in which a conductive heat sink is electrically connected to corresponding pins on a substrate in this embodiment;
[0039] Figure 8 Schematic cross-sectional view of a unit module in which the conductive heat dissipation element is a conductive pin in this embodiment. DETAILED DESCRIPTION
[0040] The specific implementation of the utility model patent is further described in detail below in conjunction with the accompanying drawings.
[0041] Example 1
[0042] In this embodiment, it is taken as an example that the number of unit modules in the power module is 2, the number of independent packaged devices in a single unit module is 2, the number of chips in a single independent packaged device is 1, and the chip is a transistor or a diode.
[0043] like Figure 1 As shown, a power module with ultra-high efficiency heat dissipation performance and independent packaged devices includes a tube shell (the tube shell is not shown), a substrate 1, two unit modules 2 and an insulating protective layer (not shown in the figure);
[0044] The substrate 1 is disposed in the tube shell;
[0045] like Figure 2 and Figure 3 As shown, the unit module 2 includes two independent packaging devices (3, 4) and a conductive heat dissipation member 5;
[0046] Among them, Figure 4 As shown, the independent packaged device 3 includes a conductive support, a transistor 7 and a plastic package 8;
[0047] The transistor 7 is mounted on the conductive bracket by means of a conductive medium 6 and is electrically connected to corresponding pins (9, 10) on the conductive bracket;
[0048] The plastic package 8 covers the entire chip package, and the back of the transistor 7 and the pins (9, 10) on the conductive bracket are exposed outside the plastic package 8; Figure 5 As shown, the chip in another independent package 4 is a diode 11.
[0049] like Figure 3 As shown, the conductive heat sink 5 is mounted on the back of the chips (transistor 7, diode 11) in the two chip packages (3, 4) through a conductive medium 12, and is electrically connected to the corresponding pins (D pole) on the back of the chips (transistor 7, diode 11) respectively;
[0050] The pins (9, 10) in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate 1;
[0051] The tube shell is covered with an insulating protective layer. In the present embodiment, the back sides of the conductive heat sink and the chip are located outside the insulating protective layer. Alternatively, the back sides of the conductive heat sink and the chip may also be located inside the insulating protective layer. Furthermore, the back side of the chip is located inside the insulating protective layer, and the top of the conductive heat sink is located outside the insulating protective layer.
[0052] The inventor of the utility model needs to explain that the chip in the independent packaged device can be a combination of a triode, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, a diode, or one or more combinations thereof, and can be designed according to actual needs. Figure 6 As shown, the number of chips in a single independent packaged device is 2 (one is a diode 13 and the other is a transistor 14).
[0053] In addition, one or more of passive components, active components and sensors are provided on the substrate 1 according to the electrical function requirements. The number of independently packaged components can be arranged according to actual needs.
[0054] In addition, Figure 7 As shown, the conductive heat sink 5 is electrically connected to the corresponding pin 15 (D pole) on the substrate 1, and whether to perform the above design can be determined according to actual needs.
[0055] In this embodiment, the insulating protective layer is protective glue.
[0056] In this embodiment, the conductive heat sink is a copper plate.
[0057] In addition, if Figure 8 As shown, the conductive heat sink is a plurality of conductive needles 15, and the back side of each chip is connected to a conductive needle 15 via a conductive medium.
[0058] The working principle of this embodiment, taking NMOS+FRD as an example, provides a high level at the input end, generates current and flows in from the S pole at the connection of the tube shell, flows into the S pole of the internal chip through the S pole of the external pin terminal of the packaged device, and then leads the current to the D pole on the back of the chip through the internal circuit connection of the chip, and then connects with the diode through the metal conductive medium component on the top of the plastic package device to form a connection between the P pole or N pole of the D diode, effectively forming a connection loop between the MOS and the diode. In order to directly and effectively lead the entire current loop to the outside of the tube shell, the back of the chip is directly exposed outside the plastic package 8, and then the conductive heat sink 5 is used to connect to the D terminal of the tube shell, and finally the S and D terminals of the tube shell are interconnected with the exposed control circuit to form an output from the internal function of the chip to the function of the package module, and the function of double-sided heat dissipation of the chip is realized.
[0059] The preferred embodiments of the present invention have been specifically described above, but the present invention is not limited to the described embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention, and these equivalent modifications or substitutions are all within the scope defined by the claims of this application.
Claims
1. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices, characterized in that: It includes a tube shell, a substrate and at least one unit module; The substrate is disposed in the tube shell; The unit module includes at least one independent packaging device and a conductive heat dissipation member; The independent packaged device comprises a conductive support, at least one chip and a plastic package; At least one of the chips is mounted on the conductive support by flip-flopping through a conductive medium and is electrically connected to a corresponding pin on the conductive support; The plastic package body covers the entire independent package device, and the back sides of all the chips and the pins on the conductive bracket are exposed outside the plastic package body; The conductive heat sink is mounted on the back of the chips in all the independent packaged devices through a conductive medium and is electrically connected to the back of the chips respectively; The pins in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate.
2. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1, characterized in that: An insulating protective layer is provided on the tube shell, and the back side of the conductive heat sink and / or the chip is located inside or outside the insulating protective layer.
3. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1, characterized in that: The chip in the independently packaged device may be a combination of one or more transistors, IGBT power chips, SIC power chips, GAN power chips, MOSFET power chips, and diodes.
4. A power module with ultra-high efficiency heat dissipation performance comprising independent packaged devices as claimed in any one of claims 1 to 3, characterized in that: The substrate is provided with one or more of passive components, active components and sensors according to electrical function requirements.
5. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 2, characterized in that: The insulating protective layer is protective glue.
6. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1, characterized in that: The number of chips in the independently packaged device is 1.
7. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1, characterized in that: The conductive heat sink is electrically connected to corresponding pins on the substrate.
8. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1 or 7, characterized in that: The conductive heat sink is a copper plate.
9. A power module with ultra-high efficiency heat dissipation performance and comprising independent packaged devices as claimed in claim 1, characterized in that: The conductive heat sink is a plurality of conductive pins, and the back side of each chip is connected with one of the conductive pins via a conductive medium.