Power module with super-efficient heat dissipation performance and chips with pins on same surface
By designing the back heat dissipation and double-sided heat dissipation structure of the chip in the IGBT/SiC power module, the problem of insufficient heat dissipation capabilities of the existing modules is solved, more efficient heat dissipation and higher integration are achieved, and the yield of the module is improved.
Patent Information
- Application Number
- CN202421597733.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-08
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2034-07-08
AI Technical Summary
The existing IGBT/SiC power modules have poor heat dissipation capabilities, resulting in low efficiency when working in high temperature environments, and high internal temperature of the module makes the integration low, and a chip failure will lead to the scrapping of the entire module.
Design a power module with ultra-efficient heat dissipation performance. By exposing on the back of the chip and connecting it with conductive heat dissipation parts, it increases the heat dissipation channel, and places the chip's pins on the same side, independently packaged and inverted mounts to achieve double-sided heat dissipation of the chip.
It significantly improves the heat dissipation efficiency of the module, reduces the internal temperature, and improves the integration. If there is a problem with one chip, it can be replaced separately without affecting the use of the entire module, improving the yield.
Smart Images
Figure CN222775317U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface. Background Art
[0002] In the contemporary world, IGBT / SiC power modules are undoubtedly a shining star. They have an irreplaceable position in the fields of power control, energy replacement and industrial applications. In the field of electric vehicles, IGBT / SiC power modules act as key components in the drive system, helping to transfer electric energy from batteries to motors and achieve efficient energy conversion; in solar and wind power generation, IGBT / SiC power modules convert DC power into AC power, inject renewable energy into the power grid, and contribute to the popularization of clean energy. In industrial automation, IGBT / SiC power modules are used for motor control and variable frequency speed regulation, which improves production efficiency and energy utilization. However, behind all this is the long development process of IGBT / SiC power modules. Both IGBT and SiC have overcome many technical obstacles. In the 1980s, with the continuous advancement of semiconductor material technology, high voltage and high current have been improved. The advancement of manufacturing technology has also improved the stability and consistency of devices. Future development focuses on improving efficiency, reducing losses, improving integration and adapting to more application scenarios.
[0003] High frequency and high temperature applications: With the advancement of communication technology, the demand for frequency switching performance is increasing. The performance optimization of IGBT / SiC power modules has become an important research direction to meet the needs of fields such as RF. At the same time, the ability to work in high temperature environments is also a key point. If working at high temperatures, the heat dissipation capacity should be improved to adapt to more demanding application conditions.
[0004] Integration and miniaturization: With the advancement of technology, the requirements for device size and integration are getting higher and higher. In the future, IGBT technology will develop in the direction of miniaturization and high integration, or be gradually replaced by SiC to achieve more compact circuit design and more efficient energy conversion.
[0005] Higher processing yield: For example, in SiC module production, the yield loss cost accounts for 20% of the finished product. In addition, SiC chips are expensive and difficult to produce, which is not conducive to mass production. Therefore, if innovation is to overcome the problem that a bad chip will scrap the entire module, this also needs to be solved.
[0006] After summarizing, there are the following deficiencies:
[0007] 1. In addition to external heat dissipation devices, the heat dissipation capacity of the module itself also requires more heat dissipation channels. The traditional IGBT / SiC power module has only one heat dissipation channel and has poor heat dissipation capacity.
[0008] 2 Due to the high internal temperature of the module, other devices such as the control circuit board cannot be integrated with the module and need to be equipped separately; if the product temperature can be reduced, the integration can be improved;
[0009] 3. The chips are uniformly welded and connected in the module. If one chip has a problem, the entire module will be scrapped.
[0010] Therefore, the focus is very clear. Improving heat dissipation and increasing the yield rate have become urgent tasks to be solved. Utility Model Content
[0011] In view of the above technical problems, the purpose of this utility model patent is to provide a power module with ultra-efficient heat dissipation performance and containing chips with pins located on the same side.
[0012] It includes a tube shell, a substrate and at least one unit module;
[0013] The substrate is disposed in the tube shell;
[0014] The unit module includes at least one independent packaging device;
[0015] The independent packaged device comprises a conductive support, at least one chip and a plastic package;
[0016] Among all the independently packaged devices, at least one independently packaged device has pins of all the chips located on the same side of the independently packaged device;
[0017] In an independent package device, the pins of the chip are all located on the same side of the chip, and the chip is mounted on the conductive support through a conductive medium and electrically connected to the corresponding pins on the conductive support;
[0018] The plastic package body covers the entire independent package device, and the pins on the conductive bracket are exposed outside the plastic package body;
[0019] The pins in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate.
[0020] Optionally, the pins in the chip are all located on the same side of the chip in an independent package device, and the back side of the chip is exposed outside the plastic package.
[0021] Optionally, the pins in the chip are all located on the same side of the chip in an independent package device, and the back side of the chip is exposed in the plastic package.
[0022] Furthermore, a heat sink is provided in the independent package device in which the pins of the chip are all located on the same side of the chip, the bottom of the heat sink is bonded to the back of the chip by an adhesive, and the upper surface of the heat sink is exposed outside the plastic package.
[0023] Specifically, except for the independently packaged devices in which the pins of the chip are all located on the same side of the chip, in the remaining independently packaged devices, the front side of the chip is flip-flopped on the conductive bracket through a conductive medium and is electrically connected to the corresponding pins on the conductive bracket, and the back side of the chip is connected to the conductive heat sink through a conductive medium.
[0024] Furthermore, the conductive heat sink is electrically connected to corresponding pins on the substrate.
[0025] Furthermore, an insulating protective layer is provided on the tube shell, and the back side of the conductive heat sink and / or the chip is located inside or outside the insulating protective layer.
[0026] Specifically, the chip in the independently packaged device may be one or more combinations of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0027] Optionally, one or more of passive components, active components and sensors are provided on the substrate according to electrical function requirements.
[0028] Specifically, the insulating protective layer is protective glue.
[0029] Preferably, the number of chips in the independently packaged device is 1.
[0030] Optionally, the conductive heat sink is a copper sheet.
[0031] Optionally, the conductive heat sink is a plurality of conductive pins, and the conductive pins are connected to the back side of the corresponding chip through a conductive medium to achieve electrical connection.
[0032] Preferably, a power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface further comprises a heat dissipation component, wherein the heat dissipation component is connected to the back side of the chip to dissipate the heat in the tube shell to the outside of the tube shell.
[0033] The power module of the utility model with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same side has the following advantages compared with the prior art:
[0034] (1) Each independently packaged device is packaged separately, and the chips are all packaged upside down. All types of chips are independently packaged according to this scheme; all independently packaged devices are installed in the module according to electrical requirements, and the electrical output is connected and led out using conductive components;
[0035] (2) The above-mentioned change in the power module structure results in a shorter process flow, fewer material varieties, and a shorter production cycle;
[0036] (3) Reducing the size of packaged devices is more conducive to improving the yield rate. After each device is packaged separately, it can be screened and placed in the module, ensuring that each product is a good product and improving the yield rate of the module. If there is a problem with a device, it can be directly removed and replaced with a new one without scrapping the entire module. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] Figure 1 This is a schematic structural diagram of a power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface of the present embodiment;
[0038] Figure 2 The cross-section diagram of the independent package device in this embodiment with the pins located on the same side of the chip is shown in FIG. Figure 1 ;
[0039] Figure 3 The cross-section diagram of the independent package device in this embodiment with the pins located on the same side of the chip is shown in FIG. Figure 2 ;
[0040] Figure 4 The cross-section diagram of the independent packaged device with pins distributed on the upper and lower sides of the chip in this embodiment is shown in FIG. Figure 1 ;
[0041] Figure 5 The cross-section diagram of the independent packaged device with pins distributed on the upper and lower sides of the chip in the embodiment is shown in FIG. Figure 2 ;
[0042] Figure 6 Schematic cross-sectional view of a unit module in which the conductive heat dissipation element is a conductive pin in this embodiment. DETAILED DESCRIPTION
[0043] The specific implementation of the utility model patent is further described in detail below in conjunction with the accompanying drawings.
[0044] Example 1
[0045] In this embodiment, the chip is taken as a triode or a diode as an example.
[0046] like Figure 1 As shown, a power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface comprises a tube shell, a substrate 1 and at least one unit module 2.
[0047] The substrate 1 is disposed in the tube shell.
[0048] Among them, one of the unit modules 2 includes two independent packaging devices (3, 4);
[0049] Among them, one independent package device includes a conductive bracket, a transistor 5 and a plastic package 6; the chip in the other independent package 4 is a diode 7
[0050] The pins of transistor 5 and diode 7 are located on the same side of themselves;
[0051] In an independent package device, the pins of the chip are all located on the same side of the chip, and the chip is mounted on the conductive support through a conductive medium and electrically connected to the corresponding pins on the conductive support;
[0052] The plastic package body 6 covers the entire independent package device, and the pins on the conductive bracket are exposed outside the plastic package body 6;
[0053] The pins in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate 1 .
[0054] In this embodiment, if Figure 2 As shown, the pins in the chips (5, 7) are all located on the same side of the independent packaged device, and the back side of the chips (3, 4) is exposed outside the plastic package.
[0055] In addition, if Figure 3 As shown, in an independent package device in which the pins of the chips (5, 7) are all located on the same side, the back side of the chips (5, 7) can also be exposed inside the plastic package. Further, in an independent package device in which the pins of the chips (5, 7) are all located on the same side, a heat sink 8 is provided, and the bottom of the heat sink is bonded to the back side of the chip by an adhesive. Furthermore, the upper surface of the heat sink is exposed outside the plastic package.
[0056] In this embodiment, except for the independent packaged device in which the pins of the chip are all located on the same side of the chip, the remaining independent packaged devices, such as Figure 4 As shown, the front side of the chip (9, 10) is mounted on the conductive bracket by means of a conductive medium 11 and is electrically connected to the corresponding pins on the conductive bracket, and the back side of the chip (9, 10) is connected to a conductive heat sink 13 by means of a conductive medium 12.
[0057] In addition, in this embodiment, Figure 5 As shown, the conductive heat sink 13 is electrically connected to the corresponding pin (D pole) on the substrate 1. Whether to perform the above design can be determined according to actual needs.
[0058] In this embodiment, an insulating protective layer is provided on the tube shell. In this embodiment, the conductive heat sink 13 and the back side of the chip are located outside the insulating protective layer; in addition, the conductive heat sink 13 and the back side of the chip may also be located inside the insulating protective layer; in addition, the back side of the chip is located inside the insulating protective layer, and the top of the conductive heat sink is located outside the insulating protective layer.
[0059] In addition, the chip in the independently packaged device may be one or more combinations of a transistor, an IGBT power chip, a SIC power chip, a GAN power chip, a MOSFET power chip, and a diode.
[0060] Optionally, in this embodiment, one or more of passive components, active components and sensors are provided on the substrate according to electrical function requirements.
[0061] Specifically, the insulating protective layer is protective glue.
[0062] Preferably, the number of chips in the independently packaged device is 1.
[0063] In this embodiment, the conductive heat sink is a copper sheet.
[0064] Alternatively, if Figure 6 As shown, the conductive heat sink is a plurality of conductive pins, and the conductive pins are connected to the back side of the corresponding chip through a conductive medium to achieve electrical connection.
[0065] The working principle of this embodiment, taking NMOS+FRD as an example, provides a high level at the input end, generates current and flows in from the S pole at the connection of the tube shell, through the S pole of the external pin terminal of the packaged device, and flows into the S pole on the front of the internal chip, thereby connecting the current to the D pole on the front of the chip through the internal circuit connection of the chip, effectively forming a connection loop between the MOS and the diode. The back of the chip can be directly exposed outside the plastic package. The method to make the heat dissipation better is to use a heat sink installed on the back of the chip to achieve the function of double-sided heat dissipation of the chip.
[0066] The inventor needs to explain that a power module with ultra-high efficiency heat dissipation performance and a chip with pins located on the same surface of the present embodiment includes a heat dissipation component, which is connected to the back of the chip to dissipate the heat in the tube shell to the outside of the tube shell; such a configuration can effectively improve the heat dissipation efficiency of the independent packaged device. The heat dissipation component can be connected to the back of the chip through a metal needle or a metal sheet to transfer the heat generated by the chip during operation.
[0067] The preferred embodiments of the present invention have been specifically described above, but the present invention is not limited to the described embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention, and these equivalent modifications or substitutions are all within the scope defined by the claims of this application.
Claims
1. A power module with ultra-high heat dissipation performance and containing chips with pins located on the same side, characterized in that: It includes a tube shell, a substrate and at least one unit module; The substrate is disposed in the tube shell; The unit module includes at least one independent packaging device; The independent packaged device comprises a conductive support, at least one chip and a plastic package; Among all the independently packaged devices, at least one independently packaged device has pins of all the chips located on the same side of the independently packaged device; In an independent package device, the pins of the chip are all located on the same side of the chip, and the chip is mounted on the conductive support through a conductive medium and electrically connected to the corresponding pins on the conductive support; The plastic package body covers the entire independent package device, and the pins on the conductive bracket are exposed outside the plastic package body; The pins in the conductive bracket in the independent packaged device are electrically connected to the corresponding pins on the substrate.
2. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 1, characterized in that: The pins in the chip are all located in an independent package device on the same side of the chip itself, and the back side of the chip is exposed outside the plastic package.
3. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same side as claimed in claim 1, characterized in that: The pins in the chip are all located in an independent package device on the same side of the chip itself, and the back side of the chip is exposed in the plastic package.
4. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 3, characterized in that: A heat sink is provided in an independent package device in which pins of a chip are all located on the same side of the chip, and the bottom of the heat sink is bonded to the back side of the chip by an adhesive.
5. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 4, characterized in that: The upper surface of the heat sink is exposed outside the plastic package.
6. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same surface as claimed in claim 1, characterized in that: Except for the independently packaged devices in which the pins of the chip are all located on the same side of the chip, in the remaining independently packaged devices, the front side of the chip is flip-flopped on the conductive bracket through a conductive medium and is electrically connected to the corresponding pins on the conductive bracket, and the back side of the chip is connected to the conductive heat sink through a conductive medium.
7. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 6, characterized in that: The conductive heat sink is electrically connected to corresponding pins on the substrate.
8. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 6, characterized in that: An insulating protective layer is arranged on the tube shell, and the back side of the conductive heat sink and / or the chip is located inside or outside the insulating protective layer.
9. A power module with ultra-high efficiency heat dissipation performance and containing chips with pins located on the same surface as claimed in claim 1, characterized in that: The chip in the independently packaged device may be a combination of one or more transistors, IGBT power chips, SIC power chips, GAN power chips, MOSFET power chips, and diodes.
10. A power module with ultra-high heat dissipation performance and comprising chips with pins located on the same surface as claimed in any one of claims 1 to 9, characterized in that: The substrate is provided with one or more of passive components, active components and sensors according to electrical function requirements.
11. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same surface as claimed in claim 8, characterized in that: The insulating protective layer is protective glue.
12. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same side as claimed in claim 1, characterized in that: The number of chips in the independently packaged device is 1.
13. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same surface as claimed in claim 6, characterized in that: The conductive heat sink is a copper sheet.
14. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same surface as claimed in claim 6, characterized in that: The conductive heat sink is a plurality of conductive pins, and the conductive pins are connected to the back side of the corresponding chip through a conductive medium to achieve electrical connection.
15. A power module with ultra-high efficiency heat dissipation performance and comprising chips with pins located on the same surface as claimed in claim 8, characterized in that: It also includes a heat dissipation component, which is connected to the back side of the chip and dissipates the heat in the tube shell to the outside of the tube shell.