ALD (Atomic Layer Deposition) coating device for multi-chip silicon-based perovskite battery

Abstract

The utility model relates to an ALD (atomic layer deposition) coating device for a multi-chip silicon-based perovskite battery, and belongs to the technical field of ALD coating. The device comprises a device body, the device body is arranged in a reaction chamber of ALD equipment, and an aluminum boat used for bearing a substrate silicon wafer is arranged in the device body; the device body structurally comprises a left baffle plate and a right baffle plate which are oppositely arranged, and further comprises a flow equalizing grating and a displaceable baffle plate which are respectively matched by taking the positions of an air inlet and an air outlet of a reaction chamber of the ALD equipment as references; the left side baffle, the right side baffle, the flow equalizing grating and the displaceable baffle integrally form a frame structure with an opening in the top; the top opening of the device body abuts against the inner wall of the upper side of the ALD equipment reaction chamber; a buffer gap is formed between the flow equalizing grating and the gas inlet of the reaction chamber; and at least one displaceable baffle plate is arranged along the vertical direction. According to the utility model, the reaction precursor is uniformly introduced, so that the film thickness uniformity of the existing ALD batch deposition SnO2 electron transport layer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of ALD coating, in particular to a multi-chip silicon-based perovskite battery ALD coating device. Background Art

[0002] Atomic layer deposition (ALD) is a method that can deposit a thin film on the surface of a substrate in the form of an atomic layer, which can effectively control the thickness of the film growth. Perovskite cells are a new type of solar cells. Its basic structure includes several main parts: transparent electrode, electron transport layer, light absorption layer, hole transport layer, and substrate. In 2015, SnO2 film prepared by ALD technology was used for the first time in perovskite solar cells as an electron transport layer. Due to its good surface morphology and high device stability, tin oxide as an electron transport layer has attracted the attention of researchers and received a lot of research. Therefore, atomic layer deposition films have good application prospects in the perovskite battery industry.

[0003] Traditional ALD equipment is widely used in the industry due to its high production capacity. The reaction chamber of ALD equipment is generally large in volume. Its working principle is to directly pulse the reaction precursor into the reaction chamber so that the substrate or the upper atomic layer is immersed in the reaction gas, and then the excess precursor is discharged through the mechanical pump at the tail exhaust. However, the existing traditional ALD is not suitable for the preparation of SnO2 electron transport layer in large quantities. In the application of existing ALD technology, when the precursor is introduced into the deposition chamber, the purge gas is usually introduced immediately. Because the ALD reaction chamber is too large, part of the precursor is not adsorbed on the surface of the silicon wafer in time or does not react completely, and has been blown away by the purge gas, thereby forming defects on the surface of the silicon wafer when the SnO2 electron transport layer is deposited in batches. In addition, the air inlet of the existing ALD equipment is generally set at the front end of the reaction chamber, and the mechanical pump at the tail end of the reaction chamber is in a 100% fully open state. After the precursor enters the chamber, the air flow direction in the large chamber is completely fixed, which ultimately leads to uneven batch deposited SnO2 electron transport layer.

[0004] Therefore, it is urgent to develop a multi-chip silicon-based perovskite cell ALD coating device. Utility Model Content

[0005] In view of the shortcomings of the above-mentioned existing production technology, the applicant provides a multi-chip silicon-based perovskite cell ALD coating device, thereby reducing the volume of the ALD equipment chamber and making the airflow uniform, and ultimately improving the film thickness uniformity of the ALD batch deposited SnO2 electron transport layer.

[0006] The technical scheme adopted by the utility model is as follows: a multi-chip silicon-based perovskite battery ALD coating device, including a device body, the device body is placed inside the reaction chamber of the ALD equipment, an aluminum boat is placed inside the device body, and the aluminum boat is used to carry the substrate silicon wafer; the structure of the device body is: including a left baffle and a right baffle that are relatively arranged, and also including a flow balancing grid and a displaceable baffle that are respectively matched and arranged based on the positions of the air inlet and the exhaust port of the reaction chamber of the ALD equipment; the left baffle, the right baffle, the flow balancing grid and the displaceable baffle constitute a frame structure with a top opening as a whole; the top opening of the device body is against the upper inner wall of the reaction chamber of the ALD equipment; a buffer gap is arranged between the flow balancing grid and the air inlet of the reaction chamber; the displaceable baffle is arranged vertically and the number of the displaceable baffles is at least one; when the reaction precursor is pulsed into the reaction chamber of the ALD equipment, it first passes through the air inlet and the flow balancing grid in sequence and then is deposited on the surface of the substrate silicon wafer, and then passes through the displaceable baffle back to the reaction chamber and enters the tail exhaust of the ALD equipment.

[0007] As a further improvement of the above technical solution:

[0008] Preferably, the structure of the current balancing grid is: comprising a plurality of grid plates, and the minimum distance between every two grid plates is equal to the minimum distance between the base silicon wafers in the aluminum boat.

[0009] Preferably, equalizing grille cross braces are provided on both the front and rear sides of the grille sheet, and equalizing grille end plates are also provided on the upper and lower ends of the grille sheet, and serrated grooves are provided on the side where the equalizing grille cross braces and the equalizing grille end plates abut against the grille sheet, and the grille sheet is stuck in the grooves; equalizing grille vertical plates are also vertically provided on the left and right sides of the grille sheet; the equalizing grille end plates and the equalizing grille cross braces are fixed to the flow grille vertical plates by bolts.

[0010] Preferably, the bottom of the flow grid vertical plate is also provided with a flow grid support foot.

[0011] Preferably, the aluminum boat is arranged on a boat base at the bottom of the device body, and the flow equalizing grid is located in front of the aluminum boat and is close to the aluminum boat.

[0012] Preferably, the displaceable baffle is installed on a baffle support frame, the baffle support frame is a "U"-shaped frame as a whole, and the displaceable baffle is installed in a recess of the baffle support frame.

[0013] Preferably, the top of the baffle support frame is equipped with an upper baffle, which abuts against the upper inner wall of the reaction chamber of the ALD equipment, and a gap is provided between the upper baffle and the movable baffle located at the top; a supporting base is fixed to the bottom of the baffle support frame.

[0014] Preferably, the baffle support frame is fixed with bolts through the left baffle screw holes on the left baffle; the baffle support frame is fixed with bolts through the right baffle screw holes on the right baffle; the baffle support frame is fixed with bolts through the displaceable baffle screw holes and the circular screw holes on both sides of the displaceable baffle; the baffle support frame is fixed with bolts through the support base screw holes on the support base; the baffle support frame is fixed with bolts through the upper baffle screw holes on the upper baffle.

[0015] Preferably, the structure of the upper baffle screw hole is: comprising a plurality of elliptical screw holes arranged in parallel.

[0016] Preferably, the structure of the screw holes of the displaceable baffle plate is: comprising a plurality of circular screw holes arranged on both sides of the displaceable baffle plate.

[0017] The beneficial effects of the utility model are as follows:

[0018] The utility model has a compact structure and is convenient to operate. The flow-equalizing grid in the device body allows the precursor to be dispersed more quickly after entering from the air inlet, and can improve the uneven airflow caused by the excessive size of the chamber of the existing ALD equipment. The displaceable baffle plate can change the flow direction of the tail gas flow in the coating device, and force the reaction gas to flow through the gap of the displaceable baffle plate, which has a certain mitigation effect, and finally improves the effect of improving the low film thickness at a certain point on the substrate surface.

[0019] The utility model also has the following advantages:

[0020] (1) The utility model reduces the original chamber volume through the space surrounded by the entire multi-chip silicon-based perovskite battery ALD coating device, thereby solving the problem of low uniformity of the film thickness of the SnO2 electron transport layer deposited in batches on the silicon-based surface;

[0021] (2) The utility model provides a buffer gap between the flow balancing grid and the air inlet of the reaction chamber, and the buffer gap allows the precursor entering the air inlet to first enter this space and then pass through the flow balancing grid, further ensuring that the precursor can be quickly dispersed after being pulsed into the precursor;

[0022] (3) The screw hole of the upper baffle of the utility model is set to an elliptical shape, so that the position of the upper baffle can be fine-tuned up and down, ensuring that the upper baffle can just support the upper inner wall of the reaction chamber of the ALD equipment to adapt to different ALD equipment chamber heights, and can ensure that the precursor is confined in the multi-chip silicon-based perovskite cell ALD coating device. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the overall structure of the utility model.

[0024] Figure 2 for Figure 1 Exploded view of.

[0025] Figure 3 It is a schematic diagram of the structure of the current equalizing grid of the utility model.

[0026] Figure 4 for Figure 3 Exploded view of.

[0027] Figure 5 This is a schematic diagram of the baffle support structure of the utility model.

[0028] Figure 6 It is a schematic diagram of the upper baffle structure of the utility model.

[0029] Figure 7 This is a schematic diagram of the structure of the displaceable baffle of the utility model.

[0030] Among them: 1. left baffle; 2. flow balancing grille; 3. movable baffle; 4. baffle support frame; 5. support base; 6. upper baffle; 7. right baffle; 8. boat base;

[0031] 21. Flow balancing grille end plate; 22. Flow balancing grille vertical plate; 23. Flow balancing grille horizontal support; 24. Grille piece; 25. Flow balancing grille support foot;

[0032] 11. Screw hole of left baffle;

[0033] 31. Screw hole for movable baffle;

[0034] 51. Support base screw hole;

[0035] 61. Upper baffle screw hole;

[0036] 71. Right baffle screw hole;

[0037] 311, round screw hole;

[0038] 611. Elliptical screw hole. DETAILED DESCRIPTION

[0039] The specific implementation of the present utility model is described below in conjunction with the accompanying drawings.

[0040] like Figure 1 to Figure 7As shown, the multi-chip silicon-based perovskite battery ALD coating device of this embodiment includes a device body, which is placed inside the reaction chamber of the ALD equipment, and an aluminum boat is placed inside the device body, and the aluminum boat is used to carry the substrate silicon wafer; the structure of the device body is: it includes a left baffle 1 and a right baffle 7 arranged relatively to each other, and also includes a flow equalizing grid 2 and a displaceable baffle 3 respectively matched and arranged based on the positions of the air inlet and the exhaust port of the reaction chamber of the ALD equipment; the left baffle 1, the right baffle 7, the flow equalizing grid 2 and the displaceable baffle 3 constitute a frame structure with a top opening as a whole; the top opening of the device body is against the upper inner wall of the reaction chamber of the ALD equipment; a buffer gap is set between the flow equalizing grid and the air inlet of the reaction chamber; the displaceable baffle 3 is arranged vertically and the number of the displaceable baffles 3 is at least one; the reaction precursor is pulsed into the reaction chamber of the ALD equipment, first passes through the air inlet and the flow equalizing grid 2 in sequence, and then is deposited on the surface of the substrate silicon wafer, and then passes through the displaceable baffle 3 back to the reaction chamber and enters the tail exhaust of the ALD equipment.

[0041] In this embodiment, by way of example, the width of the displaceable baffle 3 is 30 mm, and four displaceable baffles 3 are used, and six circular screw holes 311 are provided on a single displaceable baffle 3, which match the screw holes 31 on the baffle support frame 4. The displaceable baffle 3 is fixed to the baffle support frame 4 with bolts, which is convenient for disassembly, and the displaceable baffle 3 can be assembled on the baffle support frame 4 in the vertical direction as required.

[0042] In actual work, the residual gas after adsorption with the base silicon wafer in the multi-chip silicon-based perovskite battery ALD coating device of this embodiment is forced to flow through the gap between the displaceable baffle 3 and the upper baffle 6, the gap between the displaceable baffle 3 and the baffle support frame 4, and the gap between each two displaceable baffles 3 themselves, thereby achieving the effect of changing the gas flow direction, and finally improving the situation where the film thickness at a certain point of the base silicon wafer is too high or too low. At the same time, the presence of the displaceable baffle 3 slows down the pumping speed of the external mechanical pump in the multi-chip silicon-based perovskite battery ALD coating device, so that the precursor diffuses more evenly in the device. For example, there is no connecting piece between each two displaceable baffles 3, and they can be arbitrarily broken up, ensuring the freedom of the shape and size of the tail outlet of the multi-chip silicon-based perovskite battery ALD coating device of this embodiment.

[0043] In this embodiment, the width of the baffle support frame 4 is the same as the inner diameter width of the reaction chamber of the ALD equipment, ensuring that the precursor is confined within the multi-chip silicon-based perovskite cell ALD coating device.

[0044] In this embodiment, the structure of the current balancing grid 2 is: including multiple grid pieces 24, and the minimum spacing between each two grid pieces 24 is equal to the minimum spacing between the substrate silicon wafers in the aluminum boat; illustratively, in actual operation, the left baffle 1 and the right baffle 7 of the device body will contact the inner wall of the ALD device furnace door. Further, the precursor introduced from the air inlet of the ALD device will be forced to pass through the current balancing grid 2, thereby being confined in the space surrounded by the multi-chip silicon-based perovskite cell ALD coating device and deposited on the surface of the substrate silicon wafer.

[0045] In this embodiment, equalizing grid cross braces 23 are provided on both the front and rear sides of the grid sheet 24, and equalizing grid end plates 21 are also provided on the upper and lower ends of the grid sheet 24. A serrated groove is provided on the side where the equalizing grid cross brace 23 and the equalizing grid end plate 21 abut against the grid sheet 24, and the grid sheet 24 is stuck in the groove, thereby ensuring that the grid sheets 24 are in a parallel state; equalizing grid vertical plates 22 are also vertically provided on the left and right sides of the grid sheet 24; the equalizing grid end plates 21 and the equalizing grid cross braces 23 are fixed to the grid vertical plates 22 by bolts; and the equalizing grid support feet 25 are also provided at the bottom of the grid vertical plates 22.

[0046] In this embodiment, the aluminum boat is arranged on a boat base 8 at the bottom of the device body; illustratively, the height of the boat base 8 is constant at 30 mm, and the aluminum boat is placed on the boat base 8. The entire boat base 8 serves to lift the aluminum boat and reduce the contamination of the substrate silicon wafer at the bottom of the chamber; in actual work, it is necessary to ensure that the space surrounded by the multi-chip silicon-based perovskite battery ALD coating device is as small as possible, and the spacing between the left baffle 1 and the right baffle 7 should be only slightly larger than the width of the aluminum boat to ensure the convenience of loading and unloading the aluminum boat, and the flow equalizing grid 2 is located in front of the aluminum boat and close to the aluminum boat.

[0047] In this embodiment, the displaceable baffle 3 is installed on the baffle support frame 4 . The baffle support frame 4 is a “U”-shaped frame as a whole. The displaceable baffle 3 is installed in a recess of the baffle support frame 4 .

[0048] In this embodiment, the top of the baffle support frame 4 is equipped with an upper baffle 6, which is against the upper inner wall of the reaction chamber of the ALD equipment, and a gap is set between the upper baffle 6 and the movable baffle 3 located at the top; the bottom of the baffle support frame 4 is fixed with a support base 5, and there are two support bases 5, which play a balancing role to prevent the entire device from tipping over due to the vibration of the chamber or the pressure change during vacuuming; the baffle support frame 4 is fixed with the upper baffle screw hole 61 on the upper baffle 6 by bolts, and the structure of the upper baffle screw hole 61 is: it includes a plurality of parallel elliptical screw holes 611, and the existence of the elliptical screw holes 611 allows the position of the upper baffle 6 to be fine-tuned up and down, ensuring that the upper baffle 6 can just support the upper inner wall of the reaction chamber of the ALD equipment to adapt to different ALD equipment chamber heights, and can ensure that the precursor is almost confined in the multi-chip silicon-based perovskite cell ALD coating device.

[0049] In this embodiment, the baffle support frame 4 is fixed to the left baffle screw hole 11 on the left baffle 1 by means of bolts; the baffle support frame 4 is fixed to the right baffle screw hole 71 on the right baffle 7 by means of bolts; the baffle support frame 4 is fixed to the circular screw holes 311 on both sides of the displaceable baffle 3 by means of the displaceable baffle screw hole 31; the baffle support frame 4 is fixed to the support base screw hole 51 on the support base 5 by means of bolts; the structure of the displaceable baffle screw hole 31 is: it includes multiple circular screw holes 311 arranged on both sides of the displaceable baffle 3.

[0050] The working method of the utility model is as follows:

[0051] The precursor introduced from the air inlet of the ALD device will be forced to pass through the flow grid 2, thereby being confined in the space surrounded by the multi-chip silicon-based perovskite cell ALD coating device, and deposited on the surface of the substrate silicon wafer, and finally enter the back-end reaction chamber of the ALD device through the exhaust port formed by the movable baffle 3, and then enter the exhaust port of the ALD device;

[0052] The precursor can be dispersed when passing through the flow grid 2 after entering from the air inlet, which can improve the uneven airflow caused by the over-large chamber of the existing ALD equipment;

[0053] The residual gas after adsorption with the base silicon wafer is forced to flow through the gap between the movable baffle 3 and the upper baffle 6, the gap between the movable baffle 3 and the baffle support frame 4, and the gap between each two movable baffles 3 themselves, thereby achieving the effect of changing the gas flow direction, and ultimately improving the situation where the film thickness at a certain point on the base silicon wafer is too high or too low.

[0054] The utility model has a reasonable structure and is easy to operate. The flow-equalizing grid 2 in the device body allows the precursor to be dispersed more quickly after entering from the air inlet, and can improve the uneven airflow caused by the excessive size of the chamber of the existing ALD equipment. The movable baffle 3 is set to change the flow direction of the tail exhaust airflow, forcing the reaction gas to flow through the gap in the movable baffle 3, and has a mitigating effect, thereby improving the situation where the film thickness at a certain point on the substrate surface is low.

[0055] The above description is an explanation of the utility model, not a limitation of the utility model. The scope of the utility model is defined by the claims. Any form of modification can be made within the protection scope of the utility model.

Claims

1. A multi-chip silicon-based perovskite cell ALD coating device, characterized in that: The device comprises a device body, which is placed inside a reaction chamber of an ALD device, and an aluminum boat is placed inside the device body, and the aluminum boat is used to carry a base silicon wafer; The structure of the device body is as follows: it comprises a left baffle plate (1) and a right baffle plate (7) which are arranged opposite to each other, and also comprises a flow balancing grid (2) and a displaceable baffle plate (3) which are respectively arranged to match the positions of the air inlet and the air outlet of the reaction chamber of the ALD device; the left baffle plate (1), the right baffle plate (7), the flow balancing grid (2) and the displaceable baffle plate (3) as a whole form a frame structure with an opening at the top; the top opening of the device body abuts against the upper inner wall of the reaction chamber of the ALD device; A buffer gap is provided between the flow balancing grid and the air inlet of the reaction chamber; The displaceable baffle (3) is arranged vertically and the number of the displaceable baffles (3) is at least one; The reaction precursor is pulsed into the reaction chamber of the ALD device and first passes through the air inlet and the flow grid (2) in sequence before being deposited on the surface of the substrate silicon wafer, and then passes through the movable baffle (3) to return to the reaction chamber and enter the tail exhaust of the ALD device.

2. The multi-chip silicon-based perovskite cell ALD coating device according to claim 1, characterized in that: The structure of the current balancing grid (2) is as follows: it comprises a plurality of grid plates (24), and the minimum distance between every two grid plates (24) is equal to the minimum distance between the base silicon plates in the aluminum boat.

3. The multi-chip silicon-based perovskite cell ALD coating device according to claim 2, characterized in that: The grid sheet (24) is provided with flow-equalizing grid cross braces (23) on both the front and rear sides, and flow-equalizing grid end plates (21) are also provided at the upper and lower ends of the grid sheet (24). The flow-equalizing grid cross braces (23) and the flow-equalizing grid end plates (21) are provided with sawtooth-shaped grooves on the sides where the flow-equalizing grid cross braces (23) and the flow-equalizing grid end plates (21) abut against the grid sheet (24), and the grid sheet (24) is stuck in the grooves. Flow-equalizing grid vertical plates (22) are also vertically arranged on the left and right sides of the grid sheet (24); The flow balancing grid end plates (21) and the flow balancing grid cross braces (23) are fixed to the flow balancing grid vertical plates (22) by means of bolts.

4. The multi-chip silicon-based perovskite cell ALD coating device according to claim 3, characterized in that: A flow balancing grid support foot (25) is also provided at the bottom of the flow balancing grid vertical plate (22).

5. The multi-chip silicon-based perovskite cell ALD coating device according to claim 1, characterized in that: The aluminum boat is arranged on a boat base (8) at the bottom of the device body, and the flow balancing grid (2) is located in front of the aluminum boat and is closely attached to the aluminum boat.

6. The multi-chip silicon-based perovskite cell ALD coating device according to claim 1, characterized in that: The displaceable baffle (3) is mounted on a baffle support frame (4); the baffle support frame (4) is a "U"-shaped frame as a whole; the displaceable baffle (3) is mounted in a recess of the baffle support frame (4).

7. The multi-chip silicon-based perovskite cell ALD coating device according to claim 6, characterized in that: The top of the baffle support frame (4) is equipped with an upper baffle (6), the upper baffle (6) abuts against the upper inner wall of the reaction chamber of the ALD device, and a gap is provided between the upper baffle (6) and the displaceable baffle (3) located at the top; A supporting base (5) is fixed to the bottom of the baffle support frame (4).

8. The multi-chip silicon-based perovskite cell ALD coating device according to claim 7, characterized in that: The baffle support frame (4) is fixed to the left baffle screw hole (11) on the left baffle (1) by means of bolts; The baffle support frame (4) is fixed to the right baffle screw hole (71) on the right baffle (7) by means of bolts; The baffle support frame (4) is fixed by bolts through the movable baffle screw holes (31) and the circular screw holes (311) on both sides of the movable baffle (3); The baffle support frame (4) is fixed to the support base screw hole (51) on the support base (5) by means of bolts; The baffle support frame (4) is fixed to the upper baffle screw hole (61) on the upper baffle (6) by means of bolts.

9. The multi-chip silicon-based perovskite cell ALD coating device according to claim 8, characterized in that: The structure of the upper baffle screw hole (61) is: comprising a plurality of elliptical screw holes (611) arranged in parallel.

10. The multi-chip silicon-based perovskite cell ALD coating device according to claim 8, characterized in that: The structure of the displaceable baffle screw hole (31) is: comprising a plurality of circular screw holes (311) arranged on both sides of the displaceable baffle (3).

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