TFT (Thin Film Transistor) liquid crystal assembly capable of quickly reacting at low temperature

Abstract

The utility model discloses a TFT (Thin Film Transistor) liquid crystal component capable of quickly reacting at low temperature, which comprises upper glass and lower glass, an FPC (Flexible Printed Circuit) board body is bound on the lower glass, an ITO (Indium Tin Oxide) layer is arranged on the upper surface of the upper glass, a conductive block is arranged on the upper surface of the lower glass, and a liquid crystal layer is arranged on the conductive block. Silver paste layers are arranged at the lower left corner and the lower right corner of the upper piece of glass, cover the ITO layer and the conductive block, and are in electric contact with the conductive block. And as the ITO layer adopts a thickened design, the impedance is effectively reduced. The silver paste layer and the conductive block are utilized to conduct the current of the ITO layer of the upper glass and the current of the lower glass, so that electrifying heating is achieved, the working temperature of liquid crystals is guaranteed, and low-temperature failure of the liquid crystals is effectively avoided.

Description

Technical Field

[0001] The utility model relates to a TFT structure, more specifically, to a TFT liquid crystal component which reacts quickly at low temperature. Background Art

[0002] Usually, TFT liquid crystals react very slowly at temperatures above -10 degrees Celsius, which affects the driver's ability to check routes and reverse, and can easily cause accidents.

[0003] Chinese invention patent document CN116594214A discloses a solution for the slow response speed of liquid crystal modules in low temperature environments, characterized by comprising the following steps: S1: by making a heating layer on CG glass and directly etching an ITO heating wiring layer, since the CG surface is in direct contact with the liquid crystal screen surface, the heating layer transfers heat to the liquid crystal screen, and the heat transfer effect is good, so that the liquid crystal screen can be quickly heated to room temperature in a low temperature environment to avoid the display smear problem caused by a long response time; S2: silver paste is applied on three sides of the upper surface of the CG glass, and then a flexible circuit board (FPC) is directly placed on the silver paste; S3: a temperature sensor is placed on the liquid crystal screen, and a driver, amorphous silicon TFT, a heater and a controller are set in the heating layer. In the above S1, when the ambient temperature is -40°C, the surface of the liquid crystal module can be heated to 25°C within 2 minutes, ensuring a response speed of Max25ms. In the above S1, a separate transparent sensor heating layer can also be added to the CG, and the heating layer is fixed by OCA and CG glass. The addition of a separate transparent sensor heating layer on the CG can achieve a temperature rise of the surface of the liquid crystal module to 25°C within 1 minute when the ambient temperature is -40°C, ensuring a response speed of Max 25ms. The driver is the energy source of the heater, the amorphous silicon TFT is the switch control part of the heater, the driver is electrically connected to the heater, the heater can generate heat and dissipate heat when the power is turned on, the controller is electrically connected to the amorphous silicon TFT, and the temperature sensor is connected to the controller.

[0004] Obviously, the patent uses amorphous silicon TFT and temperature sensor in combination, which can quickly heat the LCD screen with less heat loss, and completely act on the liquid crystal without any impact on other components, and has a stronger ability to adapt to low temperatures. However, this structure is complex and the cost is too high.

[0005] Chinese invention patent document CN104465401A discloses a method for preparing a low-temperature polysilicon thin film of a thin film transistor, which is applied to a thin film transistor with an inverted gate structure, and is characterized in that the method comprises: depositing an isolation layer, an amorphous silicon layer and an anti-reflection insulation layer in sequence on a glass substrate pre-coated with a TFT metal gate; coating a photoresist on the anti-reflection insulation layer by a patterning process, and performing mask exposure and development by using the TFT metal gate; etching the anti-reflection insulation layer in the non-channel area, and stripping the photoresist, so that the anti-reflection insulation layer is formed on the amorphous silicon layer in the channel area, while the anti-reflection insulation layer is not formed on the amorphous silicon layer in the non-channel area; performing laser irradiation, and constructing a temperature gradient by using the difference between the presence or absence of the anti-reflection insulation layer in the channel area and the non-channel area, so as to realize artificially controlled super lateral growth of grains from the non-channel area to the channel area, thereby converting the amorphous silicon in the channel area into large-size polysilicon. The isolation layer and the anti-reflection insulation layer include a silicon dioxide film or a silicon nitride film or a combination of the two films; the thickness of the anti-reflection insulation layer is an odd multiple of 1 / 4 wavelength of the laser; the anti-reflection insulation layer prolongs the super cooling time of amorphous silicon crystallization and plays a role of insulation. The isolation layer, the amorphous silicon layer and the anti-reflection insulation layer are prepared by PECVD method; if the anti-reflection insulation layer is a silicon dioxide film, the preparation method of the silicon dioxide film also includes ozone solution cleaning method, laser irradiation method in oxygen environment and heating method in oxygen environment. The step of coating photoresist on the anti-reflection insulation layer by patterning process, and performing mask exposure and development by TFT metal gate includes: coating positive photoresist on the anti-reflection insulation layer by patterning process, and performing ultraviolet exposure and development. The step of performing laser irradiation, utilizing the difference between the presence or absence of an anti-reflection insulation layer between the channel region and the non-channel region to construct a temperature gradient, and realizing artificially controlled super lateral growth from the non-channel region to the channel region of the grain, thereby converting the amorphous silicon in the channel region into large-sized polycrystalline silicon, includes: performing laser irradiation by excimer laser annealing, utilizing the difference between the presence or absence of an anti-reflection insulation layer between the channel region and the non-channel region to construct a temperature gradient, and realizing artificially controlled super lateral growth from the non-channel region to the channel region of the grain, thereby converting the amorphous silicon in the channel region into large-sized polycrystalline silicon.

[0006] Obviously, the patent deposits the isolation layer, amorphous silicon layer and anti-reflective insulation layer in sequence, and coats the anti-reflective insulation layer with photoresist, performs exposure, and then etches the anti-reflective insulation layer in the non-channel area and performs photoresist stripping, thereby forming an anti-reflective insulation layer in the channel area and no anti-reflective insulation layer in the non-channel area. However, the structure and process of this anti-reflective insulation layer are complex and cannot solve the existing low-temperature failure problem. Utility Model Content

[0007] Based on this, it is necessary to provide a TFT liquid crystal component that responds quickly at low temperatures in response to the above technical problems. The TFT liquid crystal component that responds quickly at low temperatures comprises an upper glass and a lower glass, an FPC board is bound to the lower glass, an ITO layer is provided on the upper surface of the upper glass, a conductive block is provided on the upper surface of the lower glass, a silver paste layer is provided on the lower left corner and the lower right corner of the upper glass, the silver paste layer covers the ITO layer and the conductive block, and the silver paste layer forms an electrical contact with the conductive block. Since the ITO layer adopts a thickened design, its impedance is effectively reduced. By using the silver paste layer and the conductive block, the current of the ITO layer of the upper glass and the lower glass is conducted, so that the heating is powered on to ensure the working temperature of the liquid crystal and effectively avoid the failure of the liquid crystal at low temperatures.

[0008] In order to solve the above technical problems, the utility model adopts the following technical solutions:

[0009] A TFT liquid crystal component that responds quickly at low temperatures, characterized in that the TFT liquid crystal component that responds quickly at low temperatures comprises an upper glass and a lower glass, an FPC board is bound to the lower glass, an ITO layer is provided on the upper surface of the upper glass, a conductive block is provided on the upper surface of the lower glass, a silver paste layer is provided on the lower left corner and the lower right corner of the upper glass, the silver paste layer covers the ITO layer and the conductive block, and the silver paste layer forms electrical contact with the conductive block.

[0010] As a preferred implementation of the TFT liquid crystal assembly with rapid response at low temperature provided by the utility model, the size of the upper glass is smaller than that of the lower glass.

[0011] As a preferred implementation of the TFT liquid crystal component with rapid response at low temperature provided by the utility model, the silver paste layer covers the edge of the ITO layer.

[0012] As a preferred implementation of the TFT liquid crystal component with rapid response at low temperature provided by the utility model, the thickness of the ITO layer is 0.5 mm to 1 mm.

[0013] As a preferred implementation of the TFT liquid crystal component with rapid response at low temperature provided by the utility model, the thickness of the ITO layer is 0.7 mm.

[0014] As a preferred implementation of the TFT liquid crystal assembly with rapid response at low temperature provided by the utility model, a chimeric cavity is provided inside the conductive block.

[0015] As a preferred implementation of the TFT liquid crystal assembly with rapid response at low temperature provided by the utility model, the cross section of the embedded cavity is rectangular.

[0016] As a preferred implementation of the TFT liquid crystal assembly with rapid response at low temperature provided by the utility model, the cross section of the embedded cavity is arc-shaped.

[0017] As a preferred implementation of the TFT liquid crystal assembly with rapid response at low temperature provided by the utility model, the surface of the conductive block is provided with tooth grooves.

[0018] As a preferred implementation of the TFT liquid crystal component with rapid response at low temperature provided by the utility model, the depth of the tooth groove is one third of the thickness of the conductive block.

[0019] Compared with the prior art, the utility model has the following beneficial effects:

[0020] The utility model provides a TFT liquid crystal component that responds quickly at low temperatures. Since the ITO layer is thickened, its impedance is effectively reduced. The silver paste layer and the conductive block are used to conduct the current between the ITO layer of the upper glass and the lower glass, thereby heating the liquid crystal to ensure the working temperature of the liquid crystal, effectively avoiding the failure of the liquid crystal at low temperatures, and allowing the TFT to maintain a fast response in winter.

[0021] In addition, a fitting cavity may be provided inside the conductive block. The cross section of the fitting cavity is rectangular. Alternatively, the cross section of the fitting cavity is arc-shaped. By using the fitting cavity, when applying silver paste, part of the silver paste layer can be embedded in the fitting cavity, thereby improving the bonding strength between the silver paste layer and the conductive block, and improving the stability and reliability of the circuit.

[0022] In addition, the surface of the conductive block can be provided with a tooth groove. The depth of the tooth groove is one third of the thickness of the conductive block. By utilizing the tooth groove on the surface of the conductive block, part of the silver paste layer can be embedded in the tooth groove, thereby improving the bonding strength between the silver paste layer and the conductive block, and improving the stability and reliability of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the scheme in the utility model, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 This is a schematic structural diagram of a TFT liquid crystal component that reacts quickly at low temperatures according to the utility model;

[0025] Figure 2 for Figure 1 A schematic diagram of the structure of a TFT liquid crystal component that reacts quickly at low temperatures, from another perspective;

[0026] Figure 3 for Figure 2 A detailed enlarged schematic diagram of region A of the three-dimensional structural schematic diagram of a TFT liquid crystal component that reacts quickly at low temperatures;

[0027] Figure 4 It is a partial structural schematic diagram of another embodiment of the TFT liquid crystal component with fast response at low temperature of the utility model;

[0028] Figure 5 It is a partial structural schematic diagram of another embodiment of the TFT liquid crystal component with fast response at low temperature of the utility model;

[0029] Figure 6 It is a partial structural schematic diagram of another embodiment of the TFT liquid crystal component with fast response at low temperature of the utility model;

[0030] The markings in the figure are as follows: 1. upper glass; 11. ITO layer; 2. lower glass; 21. conductive block; 211. embedded cavity; 212. tooth groove; 3. FPC board; 4. silver paste layer. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the solution of the utility model, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.

[0032] As described in the background art, in the prior art, for TFT liquid crystals, the reaction speed is very slow when the temperature is above -10 degrees Celsius, which affects the driver's ability to check the route and reverse, and is likely to cause accidents.

[0033] In order to solve this technical problem, the utility model provides a TFT liquid crystal component that reacts quickly at low temperature, comprising an upper glass 1 and a lower glass 2, the lower glass 2 being bound with an FPC board 3, an ITO layer 11 being provided on the upper surface of the upper glass 1, a conductive block 21 being provided on the upper surface of the lower glass 2, and a silver paste layer 4 being provided on the lower left and right corners of the upper glass 1, the silver paste layer 4 covering the ITO layer 11 and the conductive block 21, and the silver paste layer 4 forming electrical contact with the conductive block 21. The thickness of the ITO layer 11 is 0.5 mm to 1 mm. Preferably, the thickness of the ITO layer 11 is 0.7 mm.

[0034] Through the above structural design, the ITO layer 11 is thickened to effectively reduce its impedance. The silver paste layer 4 and the conductive block 21 are used to conduct the current between the ITO layer of the upper glass 1 and the lower glass 2, thereby heating the upper glass 1 to ensure the working temperature of the liquid crystal and effectively avoid the failure of the liquid crystal at low temperature.

[0035] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.

[0036] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0037] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0038] Example 1

[0039] like Figure 1 and Figure 2 As shown, the TFT liquid crystal component that reacts quickly at low temperatures comprises an upper glass 1 and a lower glass 2, an FPC board 3 is bound to the lower glass 2, an ITO layer 11 is provided on the upper surface of the upper glass 1, a conductive block 21 is provided on the upper surface of the lower glass 2, and a silver paste layer 4 is provided on the lower left corner and the lower right corner of the upper glass 1, the silver paste layer 4 covers the ITO layer 11 and the conductive block 21, and the silver paste layer 4 forms an electrical contact with the conductive block 21.

[0040] It should be noted that the size of the upper glass 1 is smaller than that of the lower glass 2 .

[0041] In addition, the silver paste layer 4 covers the edge of the ITO layer 11 .

[0042] In addition, the thickness of the ITO layer 11 is 0.5 mm to 1 mm. Preferably, the thickness of the ITO layer 11 is 0.7 mm.

[0043] The working mode of this embodiment is described below.

[0044] The ITO layer 11 is thickened to effectively reduce its impedance. The silver paste layer 4 and the conductive block 21 are used to conduct the current between the ITO layer of the upper glass 1 and the lower glass 2, thereby heating the upper glass 1 to ensure the working temperature of the liquid crystal and effectively avoid failure of the liquid crystal at low temperature.

[0045] Example 2

[0046] The TFT liquid crystal component with rapid response at low temperature provided in Example 1 is further optimized. Specifically, a fitting cavity 211 is provided inside the conductive block 21 .

[0047] It should be noted that the cross section of the embedding cavity 211 is rectangular. Alternatively, the cross section of the embedding cavity 211 is arc-shaped.

[0048] The working mode of this embodiment is described below.

[0049] By utilizing the embedded cavity 211 , when applying silver paste, part of the silver paste layer 4 can be embedded into the embedded cavity 211 , thereby improving the bonding strength between the silver paste layer 4 and the conductive block 21 , and improving the stability and reliability of the circuit.

[0050] Example 3

[0051] The TFT liquid crystal component with rapid response at low temperature provided in Embodiment 1 or 2 is further optimized. Specifically, the surface of the conductive block 21 is provided with a tooth groove 212 .

[0052] The depth of the tooth groove 212 is one third of the thickness of the conductive block 21 .

[0053] The working mode of this embodiment is described below.

[0054] By utilizing the tooth grooves 212 on the surface of the conductive block 21 , part of the silver paste layer 4 can be embedded in the tooth grooves 212 , thereby improving the bonding strength between the silver paste layer 4 and the conductive block 21 , and improving the stability and reliability of the circuit.

[0055] The terms "coupling" and "coupling" involved in the embodiments of the present application should be understood in a broad sense. For example, they may refer to a direct physical connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors or other electronic devices.

[0056] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0057] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to replace some of the technical features therein with equivalents. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A TFT liquid crystal component that reacts quickly at low temperatures, characterized in that: The low-temperature fast-response TFT liquid crystal assembly comprises an upper glass (1) and a lower glass (2), an FPC board (3) being bound to the lower glass (2), an ITO layer (11) being provided on the upper surface of the upper glass (1), a conductive block (21) being provided on the upper surface of the lower glass (2), a silver paste layer (4) being provided on the lower left corner and the lower right corner of the upper glass (1), the silver paste layer (4) covering the ITO layer (11) and the conductive block (21), and the silver paste layer (4) forming electrical contact with the conductive block (21).

2. The TFT liquid crystal component with fast response at low temperature according to claim 1, characterized in that: The size of the upper glass (1) is smaller than that of the lower glass (2).

3. The TFT liquid crystal component with fast response at low temperature according to claim 1, characterized in that: The silver paste layer (4) covers the edge of the ITO layer (11).

4. The TFT liquid crystal component with fast response at low temperature according to claim 1, characterized in that: The thickness of the ITO layer (11) is 0.5 mm to 1 mm.

5. The TFT liquid crystal assembly with rapid response at low temperature according to claim 4, characterized in that: The thickness of the ITO layer (11) is 0.7 mm.

6. The TFT liquid crystal assembly with fast response at low temperature according to claim 1, characterized in that: An embedded cavity (211) is provided inside the conductive block (21).

7. The TFT liquid crystal assembly with rapid response at low temperature according to claim 6, characterized in that: The cross section of the embedded cavity (211) is rectangular.

8. The TFT liquid crystal assembly with rapid response at low temperature according to claim 6, characterized in that: The cross section of the embedded cavity (211) is arc-shaped.

9. The TFT liquid crystal assembly with fast response at low temperature according to claim 1, characterized in that: The surface of the conductive block (21) is provided with tooth grooves (212).

10. The TFT liquid crystal assembly with fast response at low temperature according to claim 9, characterized in that: The depth of the tooth groove (212) is one third of the thickness of the conductive block (21).

Images