Heater

Abstract

The utility model provides a heater. The heater comprises a heat uniformizing layer, a heat conducting layer and a heating layer, the heat conducting layer is located between the heat uniformizing layer and the heating layer, the two side faces of the heat conducting layer are attached to the heat uniformizing layer and the heating layer respectively, and the heat conducting layer is used for conducting heat; the heating layer is used for heating the heat conduction layer; the heat uniformizing layer is used for supporting a wafer and heating the wafer. According to the heater provided by the utility model, the heat conduction layer is arranged between the heat uniformizing layer and the heating layer and is used for uniformly conducting heat to the heat uniformizing layer, and finally the wafer is heated through the heat uniformizing layer, so that the heating uniformity of the wafer is improved, and the quality of a coating film on the surface of the wafer is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a heater. Background Art

[0002] The heater is one of the core devices of semiconductor thin film deposition equipment. The heat transferred by the heater to the wafer reaches the temperature required for the process reaction. In addition, the uniformity of the coating thickness on the wafer surface is closely related to the temperature uniformity of the heater. The better the uniformity of the heater heating temperature, the higher the quality of the wafer surface coating thickness.

[0003] For heaters, due to their high heating temperature, Hastelloy (C22) is currently basically selected as the heater body because Hastelloy is corrosion-resistant and has high melting point and strength. However, Hastelloy also has defects, such as its low thermal conductivity, which is only 19W / mk at 500°C. In addition, the connecting shaft of the heater itself will take away some heat, and the edge of the heater is affected by factors such as blowing / exhausting / heat radiation, which makes it difficult for the temperature uniformity of the heater made of Hastelloy to be within the range of ±1% at high temperatures, thus affecting the uniformity of heating the wafer and thus affecting the quality of the coating thickness on the wafer surface. Utility Model Content

[0004] The utility model aims to provide a heater, which improves the uniformity of heating a wafer and ensures the quality of the film coating on the surface of the wafer.

[0005] To achieve the above-mentioned purpose, in a first aspect, the utility model provides a heater, comprising a heat-uniform layer, a heat-conducting layer and a heating layer;

[0006] The heat-conducting layer is located between the heat-leveling layer and the heating layer, and the two sides of the heat-conducting layer are respectively attached to the heat-leveling layer and the heating layer, and the heat-conducting layer is used for heat conduction;

[0007] The heating layer is used to heat the heat conducting layer;

[0008] The uniform heat layer is used to support the wafer and heat the wafer.

[0009] The beneficial effect of the heater provided by the utility model is that a heat-conducting layer is arranged between the uniform heating layer and the heating layer to evenly conduct heat to the uniform heating layer, and finally the wafer is heated by the uniform heating layer to improve the uniformity of heating the wafer and ensure the quality of the wafer surface coating.

[0010] In some embodiments, the heat-conducting layer is a disc-shaped structure made of non-metallic materials, the heat resistance of the non-metallic materials is greater than 650 degrees Celsius, the thermal conductivity of the non-metallic materials is greater than 100W / mK, and the diameter of the heat-conducting layer is smaller than the diameter of the uniform heat layer and larger than the diameter of the wafer. The beneficial effect is that the heat-conducting layer formed by the non-metallic materials has a high thermal conductivity, thereby ensuring the uniformity of heat conduction to the uniform heat layer. In addition, the diameter of the heat-conducting layer is set to be smaller than the diameter of the uniform heat layer and larger than the diameter of the wafer, further ensuring the uniformity of heat conduction to the wafer.

[0011] In some embodiments, the heating layer includes a support portion and a first heating wire;

[0012] The support portion is provided with a heating groove;

[0013] The first heating wire is embedded in the heating groove.

[0014] In some embodiments, the diameter of the support portion is greater than the diameter of the uniform heat layer;

[0015] The heating grooves are arranged in an annular shape on the support part, and the diameter of the area enclosed by the outermost heating grooves is larger than the diameter of the heat conducting layer and smaller than the diameter of the heat leveling layer. The beneficial effect is that by setting the diameter of the support part to be larger than the diameter of the heat leveling layer, the support for the heat leveling layer is ensured, and the diameter of the area enclosed by the outermost heating grooves is larger than the diameter of the heat conducting layer and smaller than the diameter of the heat leveling layer, the heating layer heats the edge of the heat conducting layer, thereby improving the uniformity of the heat conducting layer transferring heat to the heat leveling layer.

[0016] In some embodiments, the support portion is divided into several heating areas, each of which is provided with the heating groove, the heating groove is provided with the first heating wire, and the temperature in each heating area is controlled separately. The beneficial effect is that by dividing the support portion into several heating areas, the temperature in each heating area is controlled separately, which facilitates the temperature adjustment of the heating layer and reduces the maintenance cost after the heating layer is damaged.

[0017] In some embodiments, a channel is formed at the bottom of the support portion, and through holes are formed at both ends of the heating groove, and the through holes are connected to the channel;

[0018] The two ends of the first heating wire pass through the corresponding through holes respectively, and are electrically connected to an external power source through the channel. The beneficial effect is that by opening a channel at the bottom of the support part, the routing of the first heating wire is facilitated, and the space of the heating layer is reasonably utilized.

[0019] In some embodiments, the heater further comprises a temperature sensor and a controller;

[0020] A receiving groove is provided in the heating area;

[0021] The temperature sensor is arranged in the containing tank and is used to detect the heating temperature of the heating layer;

[0022] The controller is electrically connected to the temperature sensor and the first heating wire, and is used to control the heating of the first heating wire according to the feedback value of the temperature sensor. The beneficial effect is that by arranging a temperature sensor in each heating area, it is convenient to detect the temperature in each heating area in real time, and the controller can control the heating of the first heating wire according to the feedback value of the temperature sensor in each heating area, so as to ensure the uniformity of the heating temperature of the heating layer.

[0023] In some embodiments, a groove is provided at the bottom of the heat-leveling layer, and the heat-conducting layer is provided in the groove. The beneficial effect is that by providing a groove at the bottom of the heat-leveling layer, the heat-conducting layer is located in the groove and fits with the groove, thereby further ensuring the reliability of heat conduction.

[0024] In some embodiments, the uniform heating layer of the heater further comprises a second heating wire;

[0025] A mounting channel is provided in a ring shape inside the heat-uniform layer, and the diameter of the area surrounded by the mounting channel is larger than the diameter of the heat-conducting layer;

[0026] The second heating wire is inserted into the installation channel and used to heat the uniform heating layer. The beneficial effect is that by opening the installation channel in a ring shape in the uniform heating layer, the diameter of the area surrounded by the installation channel is larger than the diameter of the heat-conducting layer, so as to ensure the temperature of the edge of the uniform heating layer and avoid the edge of the uniform heating layer affecting the uniformity of heating the wafer due to factors such as blowing or exhausting.

[0027] In some embodiments, the heater further comprises a hollow connecting shaft;

[0028] The connecting shaft is arranged at the bottom of the heating layer, and the first heating wire passes through the connecting shaft for being electrically connected to an external power source. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A front view of a heater according to an embodiment of the present invention;

[0030] Figure 2 A cross-sectional view of the heater of the embodiment provided by the utility model along its axial direction;

[0031] Figure 3 A bottom view of a heat-leveling layer according to an embodiment of the present invention;

[0032] Figure 4 This is a top view of the heating layer of the embodiment provided by the utility model.

[0033] Reference numerals:

[0034] 1. uniform heating layer; 11. groove; 12. second heating wire; 13. installation channel;

[0035] 2. Thermal conductive layer;

[0036] 3. Heating layer; 31. Supporting part; 311. Heating groove; 312. Channel; 313. Through hole; 32. First heating wire; 33. Heating area;

[0037] 4. Connecting shaft. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, a connection through an intermediate.

[0039] The heater is one of the core devices of semiconductor thin film deposition equipment. The heat transferred by the heater to the wafer reaches the temperature required for the process reaction. For example, when the wafer surface is coated, the wafer needs to be heated. However, the uniformity of the coating thickness on the wafer surface is closely related to the temperature uniformity of the heater. The better the uniformity of the heater heating temperature, the higher the quality of the coating thickness on the wafer surface. The current heater uses Hastelloy (C22) as the heater body, and due to the problem of the heater's own structure, the wafer is heated unevenly, which affects the quality of the coating.

[0040] In view of the problems existing in the prior art, the embodiment of the utility model provides a heater, referring to Figure 1 and Figure 2As shown, the heater comprises a coaxially arranged uniform heat layer 1, a heat conducting layer 2 and a heating layer 3. The heat conducting layer 2 is located between the uniform heat layer 1 and the heating layer 3, and the two side surfaces of the heat conducting layer 2 are respectively attached to the uniform heat layer 1 and the heating layer 3, and the heat conducting layer 2 is used to conduct heat to the uniform heat layer 1. The heating layer 3 is located below the heat conducting layer 2 and is used to heat the heat conducting layer 2, and the uniform heat layer 1 is located above the heat conducting layer 2 and is used to support and heat the wafer.

[0041] In this embodiment, the heat-conducting layer 2 is provided between the heat-uniform layer 1 and the heating layer 3 to evenly conduct heat to the heat-uniform layer 1. Finally, the wafer is heated by the heat-uniform layer 1 to improve the uniformity of heating the wafer, thereby ensuring the quality of the coating on the wafer surface.

[0042] In addition, in order to ensure the structural strength of the heater and prevent the structure of the heater from softening due to excessively high temperature, the uniform heating layer 1 and the heating layer 3 can still be made of Hastelloy, and the thermal conductive layer 2 can be made of a material with a high thermal conductivity coefficient. By using a material with a high thermal conductivity coefficient to form the thermal conductive layer 2, rapid heat transfer is facilitated to improve the uniformity of temperature on the uniform heating layer 1.

[0043] In some embodiments, the heat-conducting layer 2 is a disc-shaped structure made of non-metallic material, the heat resistance of the non-metallic material is greater than 650 degrees Celsius, the thermal conductivity of the non-metallic material is greater than 100W / mK, and the diameter of the heat-conducting layer 2 is smaller than the diameter of the uniform heat layer 1, and greater than the diameter of the wafer. Among them, since the heating temperature of the heater itself is relatively high, and the thermal conductivity of the heat-conducting layer 2 is required to be better, the heat resistance of the non-metallic material in this embodiment must be greater than 650 degrees Celsius, and the thermal conductivity is greater than 100W / mK. According to this requirement, the non-metallic material can be selected from graphite or ceramics (aluminum nitride or boron nitride, etc.). In addition, it should be noted that the thermal conductivity of the non-metallic material is the thermal conductivity at room temperature.

[0044] In this embodiment, the heat-conducting layer 2 is made of graphite material, and the thermal conductivity of the graphite material is 1500W / mk, so the heat-conducting layer 2 has ultra-high thermal conductivity, and the heating layer 3 transfers heat to the uniform heating layer 1 through the heat-conducting layer 2, and the temperature uniformity is greatly improved. In addition, the diameter of the heat-conducting layer 2 is set to be smaller than the diameter of the uniform heating layer 1 and larger than the diameter of the wafer. When the wafer is placed on the uniform heating layer 1, the wafer is concentric with the uniform heating layer 1 to further ensure the uniformity of heat conduction to the wafer.

[0045] In addition, the heat-conducting layer 2 can also be cut into different shapes and arranged and combined on the heating layer 3 to achieve different thermal expansion coefficients to ensure that the heat-conducting layer 2 can fit well with the heating layer 3 and the uniform heating layer 1.

[0046] In some embodiments, reference Figure 2 and Figure 3 As shown, a circular groove 11 is provided at the bottom of the heat-uniform layer 1, and the groove 11 is adapted to the heat-conducting layer 2 so that the heat-conducting layer 2 can be installed in the groove 11. The bottom edge of the heat-uniform layer 1 can be connected to the heating layer 3 by brazing to ensure the sealing of the connection between the heat-uniform layer 1 and the heating layer 3.

[0047] In this embodiment, by opening the groove 11 at the bottom of the uniform heat layer 1, the thickness of the heat-conducting part of the uniform heat layer 1 can be reduced, so that the heat can be conducted to the wafer faster, and the thermal conductive layer 2 is installed in the groove 11 to avoid heat loss, thereby ensuring the reliability of heat transfer.

[0048] In some embodiments, reference Figure 2 and Figure 4 As shown, the heating layer 3 includes a support portion 31 and a first heating wire 32. A heating groove 311 is provided on the support portion 31. The heating groove 311 is in an arc-shaped structure. A plurality of the heating grooves 311 are evenly and spaced apart on the upper surface of the support portion 31. The first heating wire 32 is embedded in the heating groove 311 in a tight fit.

[0049] Furthermore, the diameter of the support portion 31 is larger than the diameter of the uniform heating layer 1 , the heating grooves 311 are arranged in a ring shape on the support portion 31 , and the diameter of the area enclosed by the outermost heating grooves 311 is larger than the diameter of the heat conducting layer 2 and smaller than the diameter of the uniform heating layer 1 .

[0050] In this embodiment, the diameter of the support portion 31 is set to be larger than the diameter of the uniform heating layer 1, so as to ensure that the heating layer 3 supports the uniform heating layer 1, and can also conduct heat to the edge of the uniform heating layer 1. Because the diameter of the area surrounded by the outermost heating grooves 311 is larger than the diameter of the heat-conducting layer 2 and smaller than the diameter of the uniform heating layer 1, so as to ensure that the heating layer 3 can heat the edge area between the heat-conducting layer 2 and the uniform heating layer 1, thereby improving the uniformity of the heat conduction from the heat-conducting layer 2 to the uniform heating layer 1, and further improving the uniformity of heating the wafer.

[0051] In some embodiments, reference Figure 4As shown, the support portion 31 is divided into a plurality of heating areas 33 , each of the heating areas 33 is provided with a plurality of heating grooves 311 , each of the heating grooves 311 is provided with the first heating wire 32 , and the temperature in each of the heating areas 33 is controlled individually.

[0052] In this embodiment, the support portion 31 is divided into four heating areas 33. By dividing the support portion 31 into four heating areas 33, the temperature in each heating area 33 is controlled individually, which facilitates the temperature adjustment of the heating layer 3 and reduces the maintenance cost of the heating layer 3 after damage.

[0053] Furthermore, combined with Figure 2 As shown, a channel 312 is provided at the bottom of the support portion 31, and through holes 313 are provided at both ends of the heating groove 311. The through holes 313 are connected to the channel 312, and both ends of the first heating wire 32 pass through the corresponding through holes 313 respectively, and are used to be electrically connected to an external power source through the channel 312, so as to realize power supply to the first heating wire 32.

[0054] In this embodiment, by opening the channel 312 at the bottom of the support portion 31, the routing of the first heating wire 32 is facilitated, and the space of the heating layer 3 is reasonably utilized. In addition, through this routing method, when the heater is arranged in the reaction chamber, the vacuum degree in the reaction chamber can also be well guaranteed.

[0055] In some embodiments, the heater also includes a temperature sensor and a controller. A receiving groove is opened in the heating area 33. The temperature sensor is arranged in the receiving groove for detecting the heating temperature of the heating layer 3. The controller is electrically connected to the temperature sensor and the first heating wire 32, and is used to control the heating of the first heating wire 32 according to the feedback value of the temperature sensor.

[0056] In this embodiment, the temperature sensor can be a TC temperature sensor. By opening the receiving groove in each heating area 33 for burying the temperature sensor, real-time detection of the temperature in each heating area 33 is facilitated. The controller can control the heating of the corresponding first heating wire 32 according to the feedback value of the temperature sensor in each heating area 33, thereby ensuring the uniformity of the heating temperature of the entire heating layer 3.

[0057] In some embodiments, reference Figure 2 and Figure 3As shown, the uniform heating layer 1 also includes a second heating wire 12. An installation channel 13 is opened in a ring shape inside the uniform heating layer 1. The diameter of the area enclosed by the installation channel 13 is larger than the diameter of the heat conductive layer 2. The second heating wire 12 is passed through the installation channel 31213 to heat the uniform heating layer 1.

[0058] In this embodiment, the installation channel 31213 is opened in a ring shape in the uniform heating layer 1, and the diameter of the area enclosed by the installation channel 31213 is larger than the diameter of the heat conducting layer 2. The second heating wire 12 is used to heat the edge of the uniform heating layer 1 to ensure the consistency between the temperature of the edge of the uniform heating layer 1 and the temperature of the middle area of ​​the uniform heating layer 1, so as to avoid the edge of the uniform heating layer 1 affecting the uniformity of heating of the wafer due to factors such as blowing or exhausting.

[0059] In some embodiments, the heater further includes a hollow connecting shaft 4 , which is disposed at the bottom of the heating layer 3 , and the first heating wire 32 passes through the connecting shaft 4 for electrical connection to an external power source.

[0060] In this embodiment, the connecting shaft 4 can also be made of Hastelloy.

[0061] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. A heater, characterized in that: It includes a heat-uniform layer, a heat-conducting layer and a heating layer; The heat-conducting layer is located between the heat-leveling layer and the heating layer, and the two sides of the heat-conducting layer are respectively attached to the heat-leveling layer and the heating layer, and the heat-conducting layer is used for heat conduction; The heating layer is used to heat the heat conducting layer; The uniform heat layer is used to support the wafer and heat the wafer.

2. The heater according to claim 1, characterized in that The heat-conducting layer is a disc-shaped structure made of non-metallic material. The heat resistance of the non-metallic material is greater than 650 degrees Celsius, the thermal conductivity of the non-metallic material is greater than 100W / mK, and the diameter of the heat-conducting layer is smaller than the diameter of the uniform heat layer and greater than the diameter of the wafer.

3. The heater according to claim 1, characterized in that The heating layer comprises a support portion and a first heating wire; The support portion is provided with a heating groove; The first heating wire is embedded in the heating groove.

4. The heater according to claim 3, characterized in that The diameter of the support portion is greater than the diameter of the uniform heat layer; The heating grooves are arranged in a ring shape on the support portion, and the diameter of the area surrounded by the outermost heating grooves is larger than the diameter of the heat-conducting layer and smaller than the diameter of the uniform heat layer.

5. The heater according to claim 3, characterized in that The support portion is divided into a plurality of heating areas, each of the heating areas is provided with the heating groove, the heating groove is provided with the first heating wire, and the temperature in each of the heating areas is controlled independently.

6. The heater according to claim 5, characterized in that A channel is formed at the bottom of the support portion, and through holes are formed at both ends of the heating groove, and the through holes are connected to the channel; Two ends of the first heating wire pass through the corresponding through holes respectively, and are used to be electrically connected to an external power source through the channel.

7. The heater according to claim 6, characterized in that Also included are a temperature sensor and controller; A receiving groove is provided in the heating area; The temperature sensor is arranged in the containing tank and is used to detect the heating temperature of the heating layer; The controller is electrically connected to the temperature sensor and the first heating wire, and is used to control the heating of the first heating wire according to the feedback value of the temperature sensor.

8. The heater according to claim 1, characterized in that A groove is formed at the bottom of the heat-uniform layer, and the heat-conducting layer is arranged in the groove.

9. The heater according to claim 1, characterized in that The uniform heating layer further includes a second heating wire; A mounting channel is provided in a ring shape inside the heat-uniform layer, and the diameter of the area surrounded by the mounting channel is larger than the diameter of the heat-conducting layer; The second heating wire is inserted into the installation channel and is used for heating the uniform heating layer.

10. The heater according to claim 6, characterized in that Also included is a hollow connecting shaft; The connecting shaft is arranged at the bottom of the heating layer, and the first heating wire passes through the connecting shaft for being electrically connected to an external power source.

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