Glass through hole adapter plate and chip fan-out packaging structure thereof

Abstract

The utility model discloses a glass through hole adapter plate and a chip fan-out packaging structure thereof, and belongs to the technical field of semiconductor packaging. A glass substrate (110) of the glass through hole adapter plate is provided with high-density through holes (111) and a plurality of grooves (115), the high-density through holes (111) penetrate through the thickness direction of the glass substrate (110), bridge chips (210) are attached to the grooves (115) through die bonding films (220) and are plastically packaged, and rewiring metal layers of the bridge chips (210) are arranged on the upper portion and the lower portion of the glass substrate (110) respectively. And the functional chip (610) is arranged on the glass through hole adapter plate and is plastically packaged again to form the fan-out packaging structure. According to the utility model, the warping problem of the packaging structure is solved, and the reliability of the packaging structure is improved.

Description

Technical Field

[0001] The utility model relates to a glass through-hole adapter plate and a chip fan-out packaging structure thereof, belonging to the technical field of semiconductor packaging. Background Art

[0002] At present, in the 2.5D / 3D packaging structure, the silicon-based adapter board 2.5D integration technology, as an advanced system integration technology, has developed rapidly in recent years. Figure 1 However, there are two main problems with silicon-based interposers:

[0003] 1) The size of the current silicon-based interposer (TSV Interposer) is getting larger and larger. Because the bending strength of the silicon-based interposer is lower than that of alumina, after the thick dielectric layer, EMC (encapsulation material) and metallization layer are deposited on the upper side, the stress on the upper and lower sides is unbalanced, and the warping defects at both ends of the stacked packaging structure are getting larger and larger, which is difficult to control. At the same time, it also limits the thinning of the silicon-based interposer;

[0004] 2) High cost. Through silicon via (TSV) is made by silicon etching process, and then through silicon via requires oxidation insulation layer, thin wafer holding technology and other technologies;

[0005] 3) Poor electrical performance. Silicon material is a semiconductor material. When the transmission line transmits a signal, there is a strong electromagnetic coupling effect between the signal and the substrate material, and eddy currents are generated in the substrate, resulting in poor signal integrity (insertion loss, crosstalk, etc.). Summary of the invention

[0006] In order to overcome the shortcomings of the existing packaging process, the utility model provides a through-glass via adapter plate and a chip fan-out packaging structure thereof to solve the warping of the packaging structure and improve the reliability of the packaging structure.

[0007] The technical solution of the utility model is as follows:

[0008] The utility model provides a glass through hole adapter plate, which comprises a glass substrate, a first micro metal bump, a bridge chip, a first rewiring metal layer, a second rewiring layer and a first plastic sealing layer.

[0009] The bridge chip has a first surface and a second surface opposite to the first surface, the first surface is arranged with a first pad, a metal micro-column is arranged on the first pad, and the second surface is arranged with a solid crystal film;

[0010] The glass substrate has a front surface and a back surface opposite to the front surface.

[0011] The glass substrate has high-density through holes and a plurality of grooves running through the thickness direction thereof, wherein the high-density through holes are arranged in an array and have conductive structures therein, and the high-density through holes are arranged in an array beside the grooves; a first micro-metal bump is arranged on the front side of the glass substrate, wherein the spacing and diameter of the first micro-metal bump correspond to the high-density through holes one by one, and are electrically connected to the conductive structures;

[0012] The bridge chip is attached to the groove through a die-bonding film, with its metal micro-pillars facing upward and exposed from the groove;

[0013] It also includes a metal column, which is arranged on the outer side of the glass substrate, and the plastic encapsulation material encapsulates the bridge chip, the metal micro-column, the metal column and the first micro-metal bump, and fills the gaps therebetween to form a first plastic encapsulation layer, wherein the first plastic encapsulation layer exposes the end face of the metal micro-column, the end face of the micro-metal bump and the upper end face of the metal column;

[0014] The first rewiring metal layer is disposed on the first plastic packaging layer, and the first rewiring metal layer is electrically connected to the end surface of the metal micro-column, the end surface of the micro-metal bump and the upper end surface of the metal column; the outermost layer of the first rewiring metal layer is a passivation layer, and is provided with a signal port;

[0015] The second rewiring metal layer is arranged on the back of the glass substrate, the outermost layer of the second rewiring metal layer is a passivation layer and is provided with a signal port; the first rewiring metal layer and the second rewiring metal layer are electrically connected through a conductive structure and a metal column.

[0016] As an implementation method, the conductive structure includes conductive metal in high-density through holes.

[0017] As an implementation method, the opening size of the high-density through hole is less than or equal to the cross-sectional size of the metal column.

[0018] As an implementation method, the grooves are arranged in a straight line, a herringbone shape, or a field shape.

[0019] As an implementation method, the height of the metal pillar=the height of the high-density through hole+the height of the first micro metal bump.

[0020] As an implementation method, the first redistribution layer and the second redistribution layer are provided with multiple layers on corresponding surfaces thereof.

[0021] The utility model also provides a chip fan-out packaging structure of a through-glass via adapter board, which includes the above-mentioned through-glass via adapter board and a plurality of functional chips, wherein a metal column under the chip is arranged on the front solder pad of the functional chip, and is fixedly connected to the signal port of the first redistribution metal layer by solder; the functional chip is sealed with a plastic sealing material to form a second plastic sealing layer, and the back side of the functional chip is exposed, and a second BGA solder ball is arranged below the second redistribution layer.

[0022] As an implementation method, it further includes a first filling layer, wherein the first filling layer is filled at the bottom of the functional chip and between the bottom of the functional chip and the first rewiring metal layer.

[0023] As an implementation method, the functional chip is an ASIC chip and two HBM chips, and the HBM chips are distributed on both sides of the ASIC.

[0024] The utility model also provides a chip package, which includes the chip fan-out packaging structure of the through-glass hole adapter board, a heat sink, and a PCB substrate. The chip fan-out packaging structure of the through-glass hole adapter board is arranged above the PCB substrate and is fixedly connected to the PCB substrate through a second BGA solder ball. The heat sink is buckled on the chip fan-out packaging structure of the through-glass hole adapter board in a cap shape. The inner side of the top of the heat sink is bonded to the back of the functional chip through a thermal conductive film. The edge of the heat sink is fixedly connected to the PCB substrate through an adhesive. A third BGA solder ball is arranged below the PCB substrate.

[0025] It also includes a second filling layer, which is filled at the bottom of the chip fan-out packaging structure of the glass through hole adapter board and between the bottom and the PCB substrate.

[0026] Beneficial Effects

[0027] The utility model proposes a through-glass adapter plate and a chip fan-out packaging structure thereof, which adopts a glass substrate with a higher bending strength than alumina and a metal column plastic sealing to form a through-glass adapter plate, and the warping of the chip fan-out packaging structure formed is very small, solving the warping problem of the 2.5D / 3D packaging structure;

[0028] The loss and parasitic effect of the glass substrate are greatly reduced, ensuring the integrity of the transmission signal and obtaining excellent high-frequency electrical characteristics; the bridge chip 210 is embedded in the through-glass via adapter board, which reduces the process difficulty of the adapter board, thereby enabling the through-glass via adapter board monomer to obtain higher performance and lower loss, forming a thinner chip fan-out packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the existing TSV Interposer packaging structure;

[0030] Figure 2 It is a cross-sectional schematic diagram of a glass through hole adapter plate of the utility model;

[0031] Figure 3 for Figure 2 Schematic diagram of the distribution of the middle grooves, high-density through holes, and metal pillars;

[0032] Figure 4 for Figure 3 Schematic diagram of the diverse distribution of medium grooves and high-density through holes;

[0033] Figure 5 A schematic cross-sectional view of a chip fan-out packaging structure of a through-glass via adapter board formed according to an embodiment of the utility model;

[0034] Figure 6 A schematic cross-sectional view of a chip fan-out packaging structure of a through-glass via adapter board formed according to an embodiment of the utility model;

[0035] Figure 7 is a cross-sectional schematic diagram of a chip package formed according to an embodiment of the utility model;

[0036] Among them, a glass substrate 110, a front surface 101, and a back surface 103;

[0037] Groove 115;

[0038] High density through holes 111;

[0039] A first micro-metal bump 140 (UBM), a micro-metal bump end surface 141;

[0040] A first plastic sealing layer 160;

[0041] Bridge chip 210, first surface 211, second surface 212, metal micro-pillar 230, metal micro-pillar end surface 231, micro-metal bump end surface 141, metal pillar upper end surface 131, metal pillar lower end surface 133, and solid crystal film 220;

[0042] A first redistribution metal layer 510 and a second redistribution metal layer 520;

[0043] Functional chip 610, metal pillars under the chip 611, a first filling layer 613, and a second plastic encapsulation layer 650;

[0044] The second BGA solder ball 800 , the heat sink 910 , the thermal conductive film 911 , the second filling layer 913 , the adhesive 920 , the PCB substrate 930 , and the third BGA solder ball 950 . DETAILED DESCRIPTION

[0045] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It will be appreciated that the specific embodiments described herein are only used to explain the relevant inventions, rather than to limit the inventions. It should also be noted that, for ease of description, only portions related to the relevant inventions are shown in the accompanying drawings. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0047] The utility model provides a glass through hole adapter plate, such as Figures 2 to 4 As shown, it includes a glass substrate 110, a first micro-metal bump 140 (UBM), a bridge chip 210, a first redistribution metal layer 510, a second redistribution layer 520 and a first plastic encapsulation layer 160. The glass material of the glass substrate 110 is an insulator material, and its dielectric constant is only about 1 / 3 of that of silicon material, and its loss factor is 2-3 orders of magnitude lower than that of silicon material, so that the substrate loss and parasitic effect are greatly reduced, and the integrity of the transmission signal can be guaranteed.

[0048] The bridge chip 210 has a first surface 211 and a second surface 212 opposite to the first surface 211. The first surface 211 is provided with a first pad (not shown in the figure), and a metal microcolumn 230 is provided on the first pad. Preferably, the metal microcolumn 230 can be made of copper to reduce the cost while ensuring the transmission effect. The density of the metal microcolumn 230 is determined according to actual needs. The second surface 212 is provided with a solid crystal film 220, which can be an ultra-thin film adhesive such as a DAF film.

[0049] The glass substrate 110 has a front side 101 and a back side 103 opposite to the front side 101. The glass substrate 110 has a plurality of high-density through holes 111 and a plurality of grooves 115 extending through the thickness direction thereof, and the high-density through holes 111 have conductive structures therein. The conductive structures may be conductive metals plated in the high-density through holes 111 or filled with conductive metals 200, so that the glass substrate 110 has telecommunication switching capabilities. Preferably, the conductive metal 200 may be made of copper, which reduces costs while ensuring transmission effects. The aspect ratio of the high-density through holes 111 is 8:1 to 10:1. Here, the aspect ratio of 10:1 means that when the depth of the through hole is 100 microns, its opening size is 10 microns.

[0050] A plurality of first micro-metal bumps 140 (UBM) are disposed on the front surface 101 of the glass substrate 110 . The pitch and diameter of the first micro-metal bumps 140 correspond one-to-one to the high-density through holes 111 , and are electrically connected to the conductive metal 200 . The height of the first micro-metal bumps 140 is the conventional UBM height, which is about 10 microns.

[0051] In one embodiment, if Figure 4 As shown, the grooves 115 can be arranged in a straight line, a herringbone shape, or a field shape, etc., and those skilled in the art can adjust them according to the final required specifications.

[0052] In practical applications, the number of high-density through holes 111 and the number of grooves 115 can be adjusted by those skilled in the art according to actual needs without specific limitation, so as to reduce costs and improve packaging efficiency without affecting overall performance.

[0053] The area of ​​the groove 115 is larger than the area of ​​the bridge chip 210. Specifically, the size of the gap between the groove 115 and the bridge chip 210 is not specifically limited, and those skilled in the art can adjust it according to the final required specifications.

[0054] Preferably, the shape of the glass substrate 110 can be a rectangular parallelepiped of different specifications, and the preparation process of the rectangular parallelepiped glass substrate 110 is simple and efficient. Furthermore, the glass substrate 110 can also be in other shapes. The preparation of the non-rectangular glass substrate 110 is difficult, and those skilled in the art can choose according to actual needs. The bridge chip 210 is attached to the groove 115 through the solid crystal film 220, and its metal microcolumn 230 faces upward and exposes the groove 115. Generally, a bridge chip 210 is arranged in the groove 115. The bridge chip 210 is a specially designed / manufactured silicon chip for connecting high-density IOs, thereby reducing the process difficulty of the Interposer (no more layers & narrower line width and line spacing are required).

[0055] The metal pillars 130 are disposed on the outer side of the glass substrate 110 , and the number of the metal pillars 130 is determined according to actual needs. Generally, the opening size of the high-density through-holes 111 is smaller than or equal to the cross-sectional size of the metal pillars 130 .

[0056] The plastic encapsulation material encapsulates the bridge chip 210, the metal micro-pillar 230, the metal pillar 130 and the first micro-metal bump 140, and fills the gaps therebetween to form a first plastic encapsulation layer 160, wherein the first plastic encapsulation layer 160 exposes the metal micro-pillar end face 231, the micro-metal bump end face 141, the metal pillar upper end face 131 and the metal pillar lower end face 133.

[0057] Generally, the metal micro-pillar end surface 231 is flush with the micro-metal bump end surface 141 and the metal pillar upper end surface 131. Figure 2 As shown, the height of the metal pillar 130 = the height of the high-density through hole 111 + the height of the first micro-metal bump 140 .

[0058] Preferably, the material of the first plastic packaging layer 160 is an insulating polymer, specifically epoxy resin or a filling film material. Those skilled in the art may select the material according to actual conditions, and no specific limitation is made.

[0059] The first rewiring metal layer 510 is disposed on the first plastic encapsulation layer 160, and the first rewiring metal layer 510 is electrically connected to the metal microcolumn end face 231 and the micrometal bump end face 141; the outermost layer of the first rewiring metal layer 510 is a passivation layer, and is provided with a signal port (not shown in the figure), and specifically, the specific form of the signal port includes a signal terminal array, a pad or an opening, etc. Those skilled in the art can select according to the module to be connected, without specific limitation. The passivation layer can effectively prevent the first rewiring metal layer 510 from being affected by the external environment.

[0060] The second rewiring metal layer 520 is disposed on the back side 103. The outermost layer of the second rewiring metal layer 520 is a passivation layer, and a signal port (not shown in the figure) is provided. Specifically, the signal port includes a signal terminal array, a pad or an opening, etc. Those skilled in the art can select it according to the module to be connected, and no specific limitation is made. The passivation layer can effectively prevent the second rewiring metal layer 520 from being affected by the external environment.

[0061] The first rewiring metal layer 510 and the second rewiring metal layer 520 are electrically connected through the conductive structure and the metal pillar 130 in the high-density through hole 111 of the glass substrate 110, and are reinforced by the plastic encapsulation material, so that the glass adapter board can replace the traditional silicon-based adapter board to achieve three-dimensional interconnection system-level integrated packaging, further reducing the volume of the final product and reducing the overall cost.

[0062] Specifically, the first re-wiring metal layer 510 and the second re-wiring metal layer 520 may be provided with multiple layers on their corresponding surfaces, and the method may be selected according to the needs by the skilled person in the art without any specific limitation.

[0063] In practical applications, the through-glass adapter board provided by the present invention adopts a glass substrate with higher bending strength than alumina to replace traditional silicon-based connectors, which can effectively solve the problem of insufficient strength of the fan-out packaging structure, while reducing warping to a certain extent, solving the warping problem of the 2.5D / 3D packaging structure; the loss and parasitic effects of the glass substrate are greatly reduced, ensuring the integrity of the transmission signal and obtaining excellent high-frequency electrical characteristics; the through-glass adapter board has a built-in bridge chip 210, which reduces the process difficulty of the adapter board, so that the through-glass adapter board monomer can obtain higher performance and smaller loss, forming a thinner chip fan-out packaging structure.

[0064] In one embodiment, if Figure 5As shown, the utility model provides a chip fan-out packaging structure of a glass through hole adapter board, which includes any one of the glass through hole adapter boards in the above embodiments and a plurality of functional chips 610. The functional chip 610 includes at least two types such as ASIC and HBM. In the figure, the functional chip 610 is schematically shown as an ASIC chip and an HBM chip. A chip lower metal column 611 is set on the front pad of the functional chip 610, and the functional chip 610 is flipped and fixedly connected to the signal port of the first rewiring metal layer 510 through solder; the functional chip is plastic-sealed with a plastic sealing material to form a second plastic sealing layer 650, and the back of the functional chip 610 is exposed to facilitate heat dissipation, and a second BGA solder ball 800 is set below the second rewiring layer 520, and the second BGA solder ball 800 is fixedly connected to the signal port of the second rewiring metal layer 520.

[0065] The function chip 610 may also be an ASIC chip and two HBM chips, wherein the HBM chips are distributed on both sides of the ASIC. Figure 6 As shown, multiple functional chips are integrated on the first rewiring metal layer 510, so that the overall structure can replace the traditional silicon substrate to achieve three-dimensional interconnection system-level integrated packaging, and further reduce the volume of the final product while ensuring the transmission effect.

[0066] The first filling layer 613 is filled at the bottom of the functional chip 610 and between the functional chip 610 and the first redistribution metal layer 510 to further enhance the reliability of the chip fan-out packaging structure.

[0067] In one embodiment, if Figure 7 As shown, the utility model patent provides a chip package, which includes any one of the above-mentioned chip fan-out packaging structures of the through-glass-hole adapter board, a heat sink 910, and a PCB substrate 930. The chip fan-out packaging structure of the through-glass-hole adapter board is arranged above the PCB substrate 930, and is fixedly connected to the PCB substrate 930 through the second BGA solder ball 800. The heat sink 910 is buckled on the chip fan-out packaging structure of the through-glass-hole adapter board in a cap shape. The inner side of the top of the heat sink 910 is attached to the back of the functional chip 610 through a thermal conductive film 911. The edge of the heat sink 910 is fixedly connected to the PCB substrate 930 through an adhesive 920. A third BGA solder ball 950 is arranged below the PCB substrate 930; the second filling layer 913 is filled at the bottom of the chip fan-out packaging structure of the through-glass-hole adapter board and between it and the PCB substrate 930 to enhance reliability.

[0068] The above is only a preferred specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the embodiment of the utility model should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A through-glass via adapter plate, characterized in that: It comprises a glass substrate (110), a first micro-metal bump (140), a bridge chip (210), a first rewiring metal layer (510), a second rewiring metal layer (520) and a first plastic encapsulation layer (160). The bridge chip (210) has a first surface (211) and a second surface (212) opposite to the first surface (211), the first surface (211) is provided with a first pad, a metal micro-column (230) is provided on the first pad, and the second surface (212) is provided with a crystal bonding film (220); The glass substrate (110) has a front side (101) and a back side (103) opposite to the front side (101), the glass substrate (110) has high-density through holes (111) and a plurality of grooves (115) running through the glass substrate (110) in a thickness direction, the high-density through holes (111) are arranged in an array and have conductive structures (120) therein, and the high-density through holes (111) are arranged in an array beside the grooves (115); A first micro-metal bump (140) is disposed on the front surface (101) of the glass substrate (110), wherein the spacing and diameter of the first micro-metal bump (140) correspond one-to-one to the high-density through-hole (111), and the first micro-metal bump (140) is electrically connected to the conductive structure (120); The bridge chip (210) is attached to the groove (115) through a solid crystal film (220), and its metal micro-pillar (230) faces upward and is exposed from the groove (115); It also includes a metal column (130), the metal column (130) is arranged on the outer side of the glass substrate (110), the plastic encapsulation material encapsulates the bridge chip (210), the metal micro-column (230), the metal column (130) and the first micro-metal bump (140), and fills the gaps therebetween to form a first plastic encapsulation layer (160), the first plastic encapsulation layer (160) exposes the metal micro-column end face (231), the micro-metal bump end face (141) and the metal column upper end face (131); the first rewiring metal layer (510) is arranged on the first plastic encapsulation layer (160), the first rewiring metal layer (510) is electrically connected to the metal micro-column end face (231), the micro-metal bump end face (141) and the metal column upper end face (131); the outermost layer of the first rewiring metal layer (510) is a passivation layer, and is provided with a signal port; The second rewiring metal layer (520) is arranged on the back side (103) of the glass substrate (110); the outermost layer of the second rewiring metal layer (520) is a passivation layer and is provided with a signal port; the first rewiring metal layer (510) and the second rewiring metal layer (520) are electrically connected via a conductive structure (120) and a metal column (130).

2. The through glass via adapter plate according to claim 1, characterized in that: The conductive structure (120) includes conductive metal in high-density through holes (111).

3. The through glass via adapter plate according to claim 1, characterized in that: The opening size of the high-density through hole (111) is less than or equal to the cross-sectional size of the metal column (130).

4. The through glass via adapter plate according to claim 1, characterized in that: The grooves (115) are arranged in a straight line, a herringbone shape, or a field shape.

5. The through glass via adapter plate according to claim 1, characterized in that: The height of the metal pillar (130) = the height of the high-density through hole (111) + the height of the first micro-metal bump (140).

6. The through glass via adapter plate according to claim 1, characterized in that: The first rewiring metal layer (510) and the second rewiring metal layer (520) are provided with multiple layers on their corresponding surfaces.

7. A chip fan-out packaging structure of a through-glass via adapter plate, characterized in that: It comprises a glass through hole adapter plate as described in any one of claims 1 to 6 and a plurality of functional chips (610), wherein a metal column (611) under the chip is arranged on the front solder pad of the functional chip (610) and is fixedly connected to the signal port of the first rewiring metal layer (510) by solder; the functional chip is sealed with a plastic sealing material to form a second plastic sealing layer (650), and the back side of the functional chip (610) is exposed, and a second BGA solder ball (800) is arranged below the second rewiring metal layer (520).

8. The chip fan-out packaging structure of the through glass via adapter plate according to claim 7, characterized in that: It also includes a first filling layer (613), wherein the first filling layer (613) is filled at the bottom of the functional chip (610) and between the bottom of the functional chip (610) and the first rewiring metal layer (510).

9. The chip fan-out packaging structure of the through glass via adapter plate according to claim 7, characterized in that: The functional chip (610) is an ASIC chip and two HBM chips, and the HBM chips are distributed on both sides of the ASIC.

10. A chip package, characterized in that: The invention comprises a chip fan-out packaging structure of a through glass hole adapter board as claimed in any one of claims 7 to 9, a heat sink (910), and a PCB substrate (930), wherein the chip fan-out packaging structure of the through glass hole adapter board is arranged above the PCB substrate (930) and is fixedly connected to the PCB substrate (930) through a second BGA solder ball (800), the heat sink (910) is buckled on the chip fan-out packaging structure of the through glass hole adapter board in a cap shape, the inner side of the top of the heat sink (910) is bonded to the back of a functional chip (610) through a thermal conductive film (911), the edge of the heat sink (910) is fixedly connected to the PCB substrate (930) through an adhesive (920), and a third BGA solder ball (950) is arranged below the PCB substrate (930); and the invention also comprises a second filling layer (913), wherein the second filling layer (913) is filled at the bottom of the chip fan-out packaging structure of the through glass hole adapter board and between the bottom of the chip fan-out packaging structure and the PCB substrate (930).

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