Half-bridge power module, inverter and vehicle

Abstract

The utility model relates to the technical field of power modules, and provides a half-bridge power module, an inverter and a vehicle. The half-bridge power module comprises an insulating substrate, an upper bridge arm, a lower bridge arm, a first coating, a second coating and a third coating, the upper bridge arm comprises a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm comprises a plurality of first lower switch tubes and a plurality of second lower switch tubes; the first upper switch tubes and the second upper switch tubes are respectively arranged on the first coating layer, and the first lower switch tubes and the second lower switch tubes are respectively arranged on the second coating layer; the source electrodes of the first upper switch tubes are connected, the source electrodes of the second upper switch tubes are connected, the source electrodes of the first lower switch tubes are connected, and the source electrodes of the second lower switch tubes are connected. According to the scheme, the source electrodes of any group of parallel switching tubes are connected, so that the problem of relatively large interconnection inductance between the switching tubes can be avoided, and the effects of improving the current sharing characteristic of the half-bridge power module and reducing the possibility of oscillation are achieved.

Description

Technical Field

[0001] The present application relates to the technical field of power modules, and in particular to a half-bridge power module, an inverter and a vehicle. Background Art

[0002] With the development of electric vehicle technology, the demand for high-voltage power modules is increasing. Since high-voltage insulated-gate bipolar transistors (IGBT) and high-voltage silicon carbide (SiC) have excellent performance, high-voltage IGBTs and high-voltage SiC have become the best power semiconductor solutions at present.

[0003] In the related art, since the area of ​​SiC chips is relatively small, the current that can pass through a single SiC chip is relatively small. In order to achieve high output power, such as 150 kilowatts (KW) to 250KW, generally, related technicians will connect multiple chips in parallel to provide a larger current.

[0004] However, when multiple chips are connected in parallel to form a power module, problems such as oscillation, poor current sharing performance and stability often occur between the multiple chips. Utility Model Content

[0005] In order to solve the above technical problems, the present application provides a half-bridge power module, an inverter and a vehicle.

[0006] In a first aspect, an embodiment of the present application provides a half-bridge power module, the half-bridge power module comprising: an insulating substrate, an upper bridge arm, a lower bridge arm, a first covering layer, a second covering layer, and a third covering layer; the upper bridge arm comprises a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm comprises a plurality of first lower switch tubes and a plurality of second lower switch tubes;

[0007] Wherein, the first coating layer, the second coating layer, and the third coating layer are respectively attached to the upper surface of the insulating substrate;

[0008] The first covering layer is connected to the second covering layer through the upper bridge arm, the second covering layer is connected to the third covering layer through the lower bridge arm, the first covering layer is used to connect to the positive electrode of the power supply, the second covering layer is used to output electric energy to an external device, and the third covering layer is used to connect to the negative electrode of the power supply;

[0009] The first upper switch tubes and the second upper switch tubes are respectively arranged on the first covering layer, and the first lower switch tubes and the second lower switch tubes are respectively arranged on the second covering layer; and the source electrodes of the first upper switch tubes are connected, the source electrodes of the second upper switch tubes are connected, the source electrodes of the first lower switch tubes are connected, and the source electrodes of the second lower switch tubes are connected.

[0010] Optionally, the first coating includes a first sub-coating and a second sub-coating;

[0011] Each of the first upper switch tubes is respectively arranged on the first sub-cladding layer, and each of the second upper switch tubes is respectively arranged on the second sub-cladding layer.

[0012] Optionally, the half-bridge power module further comprises at least one first interconnection line;

[0013] The first end of each of the first interconnection lines is connected to the first sub-cladding layer, and the second end of each of the first interconnection lines is connected to the second sub-cladding layer.

[0014] Optionally, the half-bridge power module further comprises a first connecting clip;

[0015] Each first connection end of the first connection clip is connected to each first upper switch tube, each second connection end of the first connection clip is connected to each second upper switch tube, and a third connection end of the first connection clip is connected to the second cover layer;

[0016] A notch is provided on the first connecting clip in an area close to the third coating.

[0017] Optionally, the half-bridge power module further comprises a second connecting clip;

[0018] Each first connection end of the second connection clip is connected to each first lower switch tube respectively, each second connection end of the second connection clip is connected to each second lower switch tube respectively, and the third connection end of the second connection clip is connected to the third covering layer;

[0019] A notch is provided on the second connecting clip in an area close to the first coating.

[0020] Optionally, the half-bridge power module further includes a plurality of second interconnection lines;

[0021] At least one second interconnection line is disposed between the sources of the first upper switch tubes, between the sources of the second upper switch tubes, between the sources of the first lower switch tubes, and between the sources of the second lower switch tubes.

[0022] Optionally, each of the first upper switch tubes is symmetrically arranged with each of the second upper switch tubes;

[0023] Each of the first lower switch tubes is symmetrically arranged with respect to each of the second lower switch tubes.

[0024] Optionally, a current transmission distance between a switch tube of any group of switch tubes in the upper bridge arm and an input point of the positive electrode of the power supply is negatively correlated with a current transmission distance between a connection point of the first covering layer and the second covering layer.

[0025] Optionally, a current transmission distance between a switch tube in any group of switch tubes in the lower bridge arm and a connection point between the first covering layer and the second covering layer is negatively correlated with a current transmission distance between a connection point between the second covering layer and the third covering layer.

[0026] In a second aspect, an embodiment of the present application further provides an inverter, wherein the inverter comprises at least one half-bridge power module as described in any one of the above-mentioned first aspect.

[0027] In a third aspect, an embodiment of the present application further provides a vehicle, comprising the inverter provided in the second aspect.

[0028] Compared with the prior art, the technical solution provided by the embodiments of the present application has the following advantages:

[0029] The present application provides a half-bridge power module, in which an insulating substrate, an upper bridge arm, a lower bridge arm, a first covering layer, a second covering layer, and a third covering layer are arranged in the half-bridge power module, and the upper bridge arm includes a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm includes a plurality of first lower switch tubes and a plurality of second lower switch tubes. The first covering layer is connected to the second covering layer through the upper bridge arm, the second covering layer is connected to the third covering layer through the lower bridge arm, the first covering layer is used to connect to the positive electrode of the power supply, the second covering layer is used to output electric energy to an external device, and the third covering layer is used to connect to the negative electrode of the power supply. Each first upper switch tube and each second upper switch tube are respectively arranged on the first covering layer, and each first lower switch tube and each second lower switch tube are respectively arranged on the second covering layer.

[0030] Since the source electrodes of the first upper switch tubes are connected, the source electrodes of the second upper switch tubes are connected, the source electrodes of the first lower switch tubes are connected, and the source electrodes of the second lower switch tubes are connected, when inductive coupling occurs in each group of switch tubes, or when the inductances or voltages corresponding to the transmission lines of each switch tube in the same group are not equal, the inductances or voltages can be balanced by connecting the sources of each switch tube in the group, thereby reducing the source inductance of each switch tube.

[0031] In this way, the problem of large interconnection inductance between the switch tubes can be avoided, thereby achieving the effect of improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0033] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0034] Figure 1 A schematic diagram of the structure of a half-bridge power module provided in an embodiment of the present application;

[0035] Figure 2 A schematic diagram of the structure of another half-bridge power module provided in an embodiment of the present application;

[0036] Figure 3 A schematic diagram of the structure of another half-bridge power module provided in an embodiment of the present application;

[0037] Figure 4 A schematic diagram of the structure of another half-bridge power module provided in an embodiment of the present application;

[0038] Figure 5 A schematic diagram of the structure of another half-bridge power module provided in an embodiment of the present application;

[0039] Figure 6 A schematic diagram of the structure of an inverter provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to more clearly understand the above-mentioned purposes, features and advantages of the present application, the scheme of the present application will be further described below. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0041] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only part of the embodiments of the present application, rather than all of the embodiments.

[0042] Generally, due to the small area of ​​SiC chips, the current that can pass through a single SiC chip is relatively small. In order to achieve high output power, such as 150 kilowatts (KW) to 250KW, relevant technicians generally connect multiple chips in parallel to provide a larger current. However, when multiple chips are connected in parallel to form a power module, oscillation, poor current sharing performance and stability often occur between the multiple chips.

[0043] In addition, the general practice in the related art is to solve the gate-level oscillation problem caused by asymmetry between parallel chips by increasing the gate resistance of each switch tube, but this solution will lead to increased costs. The above solution also has the problem of not being able to balance cost and stability.

[0044] To this end, the embodiment of the present application provides a half-bridge power module, by setting an insulating substrate, an upper bridge arm, a lower bridge arm, a first covering layer, a second covering layer, and a third covering layer in the half-bridge power module, and the upper bridge arm includes a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm includes a plurality of first lower switch tubes and a plurality of second lower switch tubes. Among them, the first covering layer is connected to the second covering layer through the upper bridge arm, the second covering layer is connected to the third covering layer through the lower bridge arm, the first covering layer is used to connect the positive electrode of the power supply, the second covering layer is used to output electric energy to an external device, and the third covering layer is used to connect the negative electrode of the power supply. Each first upper switch tube and each second upper switch tube are respectively arranged on the first covering layer, and each first lower switch tube and each second lower switch tube are respectively arranged on the second covering layer; and the source electrodes of each first upper switch tube are connected, the source electrodes of each second upper switch tube are connected, the source electrodes of each first lower switch tube are connected, and the source electrodes of each second lower switch tube are connected. By connecting the source electrodes of any group of parallel-connected switch tubes, the problem of large interconnection inductance between the switch tubes can be avoided, thereby achieving the effect of improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation.

[0045] The half-bridge power module provided in the present application can be used for power conversion, such as converting input direct current into output alternating current, and can be specifically used in an inverter.

[0046] The inverter may be a single-phase inverter, a two-phase inverter or a three-phase inverter. For example, if the inverter is a single-phase inverter, then the inverter may include one half-bridge power module. If the inverter is a three-phase inverter, then the inverter may include three half-bridge power modules to convert each phase respectively. The embodiment of the present application does not limit this.

[0047] The half-bridge power module provided in the embodiment of the present application is exemplarily described below with reference to the accompanying drawings.

[0048] In one embodiment, Figure 1As shown, a half-bridge power module 100 is provided. The half-bridge power module 100 includes: an insulating substrate 101 , an upper bridge arm, a lower bridge arm, a first cladding layer 102 , a second cladding layer 103 , and a third cladding layer 104 .

[0049] The upper bridge arm includes a plurality of first upper switch tubes Q1 and a plurality of second upper switch tubes Q2 , and the lower bridge arm includes a plurality of first lower switch tubes Q3 and a plurality of second lower switch tubes Q4 .

[0050] The first covering layer 102 , the second covering layer 103 , and the third covering layer 104 are respectively attached to the upper surface of the insulating substrate 101 .

[0051] The first covering layer 102 is connected to the second covering layer 103 through the upper bridge arm, and the second covering layer 103 is connected to the third covering layer 104 through the lower bridge arm. The first covering layer 102 is used to connect to the positive pole of the power supply, the second covering layer 103 is used to output electric energy to an external device, and the third covering layer 104 is used to connect to the negative pole of the power supply.

[0052] Each first upper switch tube Q1 and each second upper switch tube Q2 are respectively disposed on the first cover layer 102 , and each first lower switch tube Q3 and each second lower switch tube Q4 are respectively disposed on the second cover layer 103 .

[0053] Furthermore, the sources of the first upper switch tubes Q1 are connected, the sources of the second upper switch tubes Q2 are connected, the sources of the first lower switch tubes Q3 are connected, and the sources of the second lower switch tubes Q4 are connected.

[0054] In this embodiment, the insulating substrate 101 may be a substrate made of an insulating material such as a ceramic substrate. The first coating 102, the second coating 103, and the third coating 104 may be coatings for conducting electricity, and may be made of conductive materials such as metals, such as copper coatings, aluminum coatings, tin coatings, etc., which are not limited in this embodiment of the present application.

[0055] In this embodiment, the first upper switch tube Q1, the second upper switch tube Q2, the first lower switch tube Q3 and the second lower switch tube Q4 can be two or more in number to ensure that the purpose of connecting multiple switch tubes in parallel can be achieved.

[0056] Generally, the number of the first upper switch tubes Q1 and the number of the second upper switch tubes Q2 need to be consistent, so that the current in the upper bridge arm can be relatively balanced. The number of the first lower switch tubes Q3 and the number of the second lower switch tubes Q4 need to be consistent, so that the current in the lower bridge arm can be relatively balanced.

[0057] In this embodiment, the first upper switch tube Q1, the second upper switch tube Q2, the first lower switch tube Q3 and the second lower switch tube Q4 can be SiC semiconductor switches. Moreover, each switch tube can be selected as an N-channel type or a P-channel type according to actual needs, which is not limited in this embodiment of the application.

[0058] Specifically, the first cladding layer 102 can be connected to the second cladding layer 103 through the source of each first upper switch tube Q1 and the source of each second upper switch tube Q2 in the upper bridge arm. The second cladding layer 103 can be connected to the third cladding layer 104 through the source of each first lower switch tube Q3 and the source of each second lower switch tube Q4 in the lower bridge arm.

[0059] Generally, if the source of each switch tube is disposed on the upper surface of the switch tube, that is, the first cover layer 102 can be connected to the second cover layer 103 through the upper surface of each first upper switch tube Q1 and the upper surface of each second upper switch tube Q2.

[0060] In addition, the first covering layer 102 may be connected to the second covering layer 103 via corresponding connecting wires or connecting devices, and the second covering layer 103 may be connected to the third covering layer 104 via corresponding connecting wires or connecting devices, which is not limited in the embodiment of the present application.

[0061] In this embodiment, the power source may be a DC power source, and the external device may be any possible power-consuming device. If the half-bridge power module 100 is applied to an inverter in a vehicle, the power source may be a power battery in the vehicle, and the external device may be a motor in the vehicle.

[0062] For example, the positive electrode of the power supply can be connected to the first cladding layer 102 through the "T+ copper busbar", and the voltage V1+ and the voltage V2+ can be output to the first cladding layer 102 through the "T+ copper busbar". The negative electrode of the power supply can be connected to the third cladding layer 104 through the "T-copper busbar", and the voltage V- can be output to the third cladding layer 104 through the "T-copper busbar".

[0063] Generally, the voltage V1+ and the voltage V2+ may be output to the first cladding layer 102 at the same time, and the voltage levels of the voltage V1+ and the voltage V2+ may be the same.

[0064] For another example, the second covering layer 103 can be connected to the external device by means of a flying wire, and the external device can also be connected to the negative electrode of the half-bridge power module 100 by means of a flying wire, so as to form a loop. This embodiment of the application is not limited to this.

[0065] In one embodiment, each first upper switch tube Q1 is symmetrically arranged with each second upper switch tube Q2, and each first lower switch tube Q3 is symmetrically arranged with each second lower switch tube Q4.

[0066] For example, see Figure 1 , Figure 1 3 first upper switch tubes Q1, 3 second upper switch tubes Q2, 3 first lower switch tubes Q3 and 3 second lower switch tubes Q4 are shown respectively. Figure 1 It can be seen that, taking the direction from left to right as an example, the first first upper switch tube Q1 is symmetrical with the first second upper switch tube Q2, the second first upper switch tube Q1 is symmetrical with the second second upper switch tube Q2, and the third first upper switch tube Q1 is symmetrical with the third second upper switch tube Q2. In addition, the first first lower switch tube Q3 is symmetrical with the first second lower switch tube Q4, the second first lower switch tube Q3 is symmetrical with the second second lower switch tube Q4, and the third first lower switch tube Q3 is symmetrical with the third second lower switch tube Q4.

[0067] In addition, the symmetry between each first upper switch tube Q1 and each second upper switch tube Q2 may mean that any first upper switch tube Q1 and the corresponding second upper switch tube Q2 are symmetrical with a straight line passing through the midpoint of the line connecting the two and perpendicular to the line connecting the two as the axis of symmetry, and the embodiment of the present application is not limited to this.

[0068] In one embodiment, the current transmission distance between a switch tube of any group of switch tubes in the upper bridge arm and the input point of the positive electrode of the power supply is negatively correlated with the current transmission distance between the connection point of the first covering layer 102 and the second covering layer 103 .

[0069] The current transmission distance between one switch tube in any group of switch tubes in the lower bridge arm and the connection point between the first cladding 102 and the second cladding 103 is negatively correlated with the current transmission distance between the connection point between the second cladding 103 and the third cladding 104 .

[0070] Specifically, any group of switch tubes in the upper bridge arm may refer to the first upper switch tubes Q1 or the second upper switch tubes Q2. Any group of switch tubes in the lower bridge arm may refer to the first lower switch tubes Q3 or the second lower switch tubes Q4.

[0071] The input point of the positive electrode of the power supply may refer to a point on the first cover layer 102 where the voltage V1+ or the voltage V2+ is input.

[0072] The distance between a switch tube in any group of switch tubes and the input point of the positive pole of the power supply refers to the distance between a switch tube in any group of switch tubes and the nearest input point. For example, the distance between the first upper switch tube Q1 and the input point of the positive pole of the power supply refers to the distance between the first upper switch tube Q1 and the point of the input voltage V1+.

[0073] The connection point between the first coating 102 and the second coating 103 may be referred to as Figure 1The number of points D1 can be one or more. Figure 1 As shown, there are three connection points between the first cover layer 102 and the second cover layer 103 , and each connection point corresponds to each first upper switch tube Q1 or each second upper switch tube Q2 .

[0074] The connection point between the second coating 103 and the third coating 104 may be referred to as Figure 1 The number of points D2 can also be one or more. Figure 1 As shown, there are three connection points between the second cover layer 103 and the third cover layer 104, and each connection point corresponds to each first lower switch tube Q3 or each second lower switch tube Q4.

[0075] That is to say, if the current transmission distance between any switch tube and the input point of the positive electrode of the power supply is longer, the current transmission distance between any switch tube and the connection point between the first cover 102 and the second cover 103 is shorter. If the current transmission distance between any switch tube and the connection point between the first cover 102 and the second cover 103 is shorter, the current transmission distance between any switch tube and the connection point between the second cover 103 and the third cover 104 is longer.

[0076] It is worth noting that in this embodiment, the first coating 102, the second coating 103, and the third coating 104 can be attached to the upper surface of the insulating substrate 101 in any possible manner, such as engraving, mapping, etc. Each switch tube can also be set on the corresponding coating in any possible manner, such as solder paste welding to weld each switch tube on the coating. That is, it is only necessary to ensure that the purpose of fixing and attachment can be achieved, and the embodiment of the present application does not limit the specific attachment method and / or setting method of each component.

[0077] It should be noted that the current flow direction of the half-bridge power module 100 provided in the embodiment of the present application is as follows:

[0078] After the positive electrode of the power supply outputs voltages V1+ and V2+ to the first cover layer 102, the current flows from the connection point between the positive electrode of the power supply and the first cover layer 102 to each first upper switch tube Q1, and flows through each first upper switch tube Q1 to the connection point D1 between the first cover layer 102 and the second cover layer 103. At the same time, the current flows from the connection point between the positive electrode of the power supply and the first cover layer 102 to each second upper switch tube Q2, and flows through each second upper switch tube Q2 to the connection point D1 between the first cover layer 102 and the second cover layer 103.

[0079] Then the current flows to the second cover layer 103 through each connection point D1 to output AC power to the external device, and flows to each first lower switch tube Q3 and each second lower switch tube Q4 through each connection point D2 between the second cover layer 103 and the third cover layer 104, and then the current flows to each connection point D2 of the second cover layer 103 and the third cover layer 104 through each first lower switch tube Q3 and each second lower switch tube Q4.

[0080] The current flows to the third covering layer 104 through each connection point D2, and because the third covering layer 104 is connected to the negative electrode of the power source, the current eventually flows to the negative electrode of the power source, forming a complete loop.

[0081] It is worth noting that, when the switch tubes are connected in parallel, parasitic inductive coupling may occur between the switch tubes, thereby causing a problem of large parasitic inductance between the switch tubes. However, in the embodiment of the present application, the source of each first upper switch tube Q1 is connected, the source of each second upper switch tube Q2 is connected, the source of each first lower switch tube Q3 is connected, and the source of each second lower switch tube Q4 is connected. In this way, when inductive coupling occurs in each group of switch tubes, or when the inductance or voltage corresponding to the transmission line of each switch tube in the same group is not equal, the inductance or voltage can be balanced by connecting the source of each switch tube in this group, thereby reducing the source inductance of each switch tube.

[0082] In this way, the problem of large interconnection inductance between the switch tubes can be avoided, thereby achieving the effect of improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation.

[0083] In addition, it should be noted that due to certain differences in the installation positions of the various switching tubes on the half-bridge power module 100, the flow paths of the current flowing through the various switching tubes to the various coverings are also different. The longer the current transmission path, the greater the inductance and / or parasitic parameters, and thus the equivalent inductance corresponding to each switching tube will be different.

[0084] In the embodiment of the present application, the current transmission distance between any upper switch tube and the positive input point of the power supply is negatively correlated with the current transmission distance between any upper switch tube and the connection point of the first cover 102 and the second cover 103. In addition, the current transmission distance between any lower switch tube and the connection point of the first cover 102 and the second cover 103 is negatively correlated with the current transmission distance between any lower switch tube and the connection point of the second cover 103 and the third cover 104. In short, the transmission path of the current when the current flows through each switch tube is adjusted by making the switch tubes in the same group of switch tubes misaligned.

[0085] In this way, the distance of the transmission path of the current passing through each switch tube to different coatings can be made as close as possible, thereby reducing the parasitic parameters (parasitic inductance and / or parasitic capacitance) corresponding to each switch tube and reducing the differences between the same group of switch tubes.

[0086] Furthermore, each first upper switch tube Q1 is symmetrically arranged with each second upper switch tube Q2, and each first lower switch tube Q3 is symmetrically arranged with each second lower switch tube Q4. That is, the symmetrical arrangement of each group of switch tubes in the same bridge arm can reduce the difference between different groups of switch tubes in the same bridge arm, and ensure that the dynamic current of each switch tube is also balanced when it is turned on.

[0087] In this way, the current sharing characteristics of the parallel-connected switch tubes can also be improved.

[0088] It can be understood that in the drawings provided in the embodiments of the present application, the number of the first upper switch tube Q1, the second upper switch tube Q2, the first lower switch tube Q3 and the second lower switch tube Q4 are all 3, but the structure shown in the drawings in the embodiments of the present application is only a possible example of the half-bridge power module 100, and does not mean that the half-bridge power module provided in the embodiments of the present application can only be set up with the structure listed in the drawings, and the embodiments of the present application are not limited to this.

[0089] For a possible implementation, see Figure 2 The first cladding layer 102 includes a first sub-cladding layer 1021 and a second sub-cladding layer 1022 .

[0090] Each first upper switch tube Q1 is disposed on the first sub-cladding layer 1021 , and each second upper switch tube Q2 is disposed on the second sub-cladding layer 1022 .

[0091] In this embodiment, the positive electrode of the power source may be connected to the first sub-covering layer 1021 and the second sub-covering layer 1022 respectively.

[0092] For example, the power supply may output a voltage V1+ to the first sub-cladding layer 1021 , and output a voltage V2+ to the second sub-cladding layer 1022 .

[0093] It is worth noting that since there is no direct connection between the first sub-cladding layer 1021 and the second sub-cladding layer 1022, when the power supply outputs the voltage V1+ and the voltage V2+ to the half-bridge power module 100, interference between the voltage V1+ and the voltage V2+ can be avoided, and the voltage V1+ can be avoided from directly flowing to each second upper switch tube Q2, or the voltage V2+ can be avoided from directly flowing to each first upper switch tube Q1.

[0094] In this way, the stability and reliability of the half-bridge power module 100 can be improved.

[0095] In one possible approach, see Figure 2 The half-bridge power module 100 further includes at least one first interconnection line L1.

[0096] The first ends of the first interconnection lines L1 are respectively connected to the first sub-cladding layer 1021 , and the second ends of the first interconnection lines L1 are respectively connected to the second sub-cladding layer 1022 .

[0097] In this embodiment, the number of the first interconnection lines L1 can be any positive integer. Generally speaking, as many first interconnection lines L1 as possible can be provided. The specific number of first interconnection lines L1 needs to be provided according to the actual layout and space conditions, which is not limited in this embodiment of the present application.

[0098] Each first interconnection line L1 may be a conductive connection line, such as a metal line such as a copper wire, an aluminum wire, or other conductive non-metallic wire. Each first interconnection line L1 may be a bonding wire, which is not limited in the present embodiment.

[0099] For example, Figure 2 As shown, a total of five first interconnection lines L1 are arranged between the first sub-cladding layer 1021 and the second sub-cladding layer 1022. Specifically, three first interconnection lines L1 are arranged on the left side of each connection point D1, and two first interconnection lines L1 are arranged on the right side of each connection point D1. However, this is only an example for illustrating the arrangement position of the first interconnection lines L1, and does not mean that the half-bridge power module 100 provided in the embodiment of the present application can only arrange five first interconnection lines L1 in the manner shown in the example.

[0100] It is worth noting that, in general, when each switch tube is disposed on a corresponding cover layer, the drain of each switch tube is connected to the corresponding cover layer, that is, the drain of each first upper switch tube Q1 is connected to the first sub-cover layer 1021 , and the drain of each second upper switch tube Q2 is connected to the second sub-cover layer 1022 .

[0101] Then, the drain of each second upper switch tube Q2 can be connected to the drain of each first upper switch tube Q1 through each first interconnection line L1. In this way, the drain inductance of each first upper switch tube Q1 and each second upper switch tube Q2 can be reduced, and the steady-state current sharing performance between each first upper switch tube Q1 and each second upper switch tube Q2 can be improved.

[0102] For a possible implementation, see Figure 3 The half-bridge power module 100 further includes a first connecting clip J1 .

[0103] Each first connection end of the first connection clamp J1 is connected to each first upper switch tube Q1 , each second connection end of the first connection clamp J1 is connected to each second upper switch tube Q2 , and the third connection end of the first connection clamp J1 is connected to the second cover layer 103 .

[0104] A notch is provided on the first connecting clip J1 in an area close to the third coating layer 104 .

[0105] In this embodiment, the first connecting clip J1 may be a conductive connecting clip, and the first connecting member J1 may specifically be a metal clip such as a copper clip or other non-metal clip that can conduct electricity.

[0106] Furthermore, the first connecting clip J1 can be specifically connected to the source of the first upper switch tube Q1 and the second upper switch tube Q2 to improve the consistency of the equivalent inductance between the gate and the source of each first upper switch tube Q1 and each second upper switch tube Q2 connected in parallel.

[0107] In addition, since the current flowing from the first upper switch tube Q1 and the second upper switch tube Q2 to the first connecting clip J1 also needs to flow to the first lower switch tube Q3 and the second lower switch tube Q4, the notch on the first connecting clip J1 is specifically arranged in a region close to the first lower switch tube Q3 and the second lower switch tube Q4.

[0108] In this embodiment, the shape and size of the notch on the first connecting clip J1 can be set by relevant technicians according to actual needs, for example, Figure 3 As shown, a corresponding notch may also be provided in the middle of the first connecting clip J1 to adjust the current transmission paths corresponding to different switch tubes, which may be adjusted specifically according to the installation positions of the upper switch tubes. This embodiment of the application does not limit this.

[0109] It is worth noting that Figure 3 As shown, the third connection end of the first connection clip J1 may be clamped on the second covering layer 103 to achieve the same function as the above-mentioned connection points D1.

[0110] As mentioned above, since there are certain differences in the installation positions of each switch tube on the half-bridge power module 100, the flow paths of the current flowing through each switch tube to each covering layer are also different. For example, the transmission distance of the current generated by the power supply output voltage V1+ flowing from the first first upper switch tube Q1 from left to right and the corresponding connection point D1 to each first lower switch tube Q3 and / or each second lower switch tube Q4 is less than the transmission distance through the third first upper switch tube Q1 and the corresponding connection point D1 to each first lower switch tube Q3 and / or each second lower switch tube Q4. Therefore, the parasitic inductance generated by the current flowing through each first upper switch tube Q1 and / or each second upper switch tube Q2 is also different.

[0111] It is worth noting that, since the first connecting clip J1 is provided with a gap in the area close to the first lower switch tube Q3, the second lower switch tube Q4, and / or the area close to the third cladding layer 104, when the current flows through the first upper switch tube Q1 or the second upper switch tube Q2 that is closest to the first lower switch tube Q3, the second lower switch tube Q4 and / or the third cladding layer 104, it is also necessary to at least be transmitted along the edge of the gap.

[0112] The path along which the current is transmitted along the edge of the notch becomes longer than the transmission path when there is no notch. Therefore, the distance of the transmission path when the current passes through each first upper switch tube Q1 or each second upper switch tube Q2 to flow to the first lower switch tube Q3 and the second lower switch tube Q4 can be made as close as possible, and the relative position between each first upper switch tube Q1 or each second upper switch tube Q2 can be set more flexibly.

[0113] In this way, the parasitic parameters corresponding to each switch tube can be reduced, and the differences between the same group of switch tubes can be reduced, so that the dynamic current of each first upper switch tube Q1 and each second upper switch tube Q2 when turned on is more balanced. In addition, since the first connecting clip J1 has a larger heat dissipation area than the connecting wire, the heat dissipation capacity of the half-bridge power module 100 can also be improved.

[0114] For a possible implementation, see Figure 4 The half-bridge power module 100 further includes a second connecting clip J2.

[0115] Each first connection end of the second connection clamp J2 is connected to each first lower switch tube Q3 , each second connection end of the second connection clamp J2 is connected to each second lower switch tube Q4 , and the third connection end of the second connection clamp J2 is connected to the third cladding layer 104 .

[0116] A notch is provided in the area of ​​the second connecting clip J2 close to the first covering layer 102 .

[0117] In this embodiment, the second connecting clip J2 may be a conductive connecting clip, and the second connecting member J2 may also be a metal clip such as a copper clip or other conductive non-metal clip.

[0118] Furthermore, the second connection clip J2 can be specifically connected to the source of the first lower switch tube Q3 and the second lower switch tube Q4 to improve the consistency of the equivalent inductance between the gate and the source of each first lower switch tube Q3 and each second lower switch tube Q4 connected in parallel.

[0119] In addition, since the current of the second connecting clip J2 flows out from each first lower switch tube Q3 and each second lower switch tube Q4, and the current of each first lower switch tube Q3 and each second lower switch tube Q4 flows out from the first upper switch tube Q1, the second upper switch tube Q2 and the above-mentioned first connecting clip J1, the notch on the first connecting clip J1 is specifically arranged in an area that can be close to the first connecting clip J1 and / or the connection point between the first cover layer 102 and the second cover layer 103.

[0120] In this embodiment, the shape and size of the notch on the second connecting clip J2 can be set by relevant technicians according to actual needs, for example, Figure 4 As shown, a corresponding notch may also be provided in the middle of the second connecting clip J2 to adjust the current transmission paths corresponding to different switch tubes, which may be adjusted specifically according to the installation positions of the lower switch tubes. This embodiment of the application does not limit this.

[0121] It is worth noting that Figure 4 As shown, the third connection end of the second connection clip J2 may be clamped on the third covering layer 104 to achieve the same function as the above-mentioned connection points D2.

[0122] As mentioned above, since there are certain differences in the installation positions of each switch tube on the half-bridge power module 100, the flow paths of the current flowing through each switch tube to each cover are also different. For example, the transmission distance of the current flowing out of the first upper switch tube Q1 through the first connection clamp J1, the first first lower switch tube Q3 from right to left, and the corresponding connection point D2 to the negative pole of the power supply is less than the transmission distance through the second first lower switch tube Q3 and the corresponding connection point D2 to the negative pole of the power supply. Therefore, the parasitic inductance generated by the current flowing through each first lower switch tube Q3 and / or each second lower switch tube Q4 is also different.

[0123] It is worth noting that, since a gap is provided on the second connecting clip J2 near the first connecting clip J1, and / or the connection point between the first cladding 102 and the second cladding 103, and / or the area near the first cladding 102, when the current flows through the first lower switch tube Q3 or the second lower switch tube Q4 which is closest to the first connecting clip J1, and / or the connection point between the first cladding 102 and the second cladding 103, and / or the first cladding 102, it is also necessary to at least be transmitted along the edge of the gap.

[0124] The path along which the current is transmitted along the edge of the notch becomes longer than the transmission path when there is no notch. Therefore, the distance of the transmission path when the current passes through each first lower switch tube Q3 or each second lower switch tube Q4 and flows to the third cladding layer 104 or the negative electrode of the power supply can be made as close as possible, and the relative position between each first lower switch tube Q3 or each second lower switch tube Q4 can be set more flexibly.

[0125] In this way, the parasitic parameters corresponding to each switch tube can be reduced, and the differences between the switches in the same group can be reduced, so that the dynamic currents of each first lower switch tube Q3 and each second lower switch tube Q4 when turned on are more balanced. In addition, since the second connecting clip J2 has a larger heat dissipation area than the connecting wire, the heat dissipation capacity of the half-bridge power module 100 can also be improved.

[0126] It is understandable that if the first connecting clamp J1 and / or the second connecting clamp J2 are used to realize the front interconnection between the switch tubes in the embodiment of the present application, the stress of the interconnection interface can be reduced, thereby improving the reliability of the half-bridge power module 100.

[0127] For a possible implementation, see Figure 5 The half-bridge power module 100 further includes a plurality of second interconnection lines L2.

[0128] At least one second interconnection line L2 is disposed between the sources of the first upper switch tubes Q1 , between the sources of the second upper switch tubes Q2 , between the sources of the first lower switch tubes Q3 , and between the sources of the second lower switch tubes Q4 .

[0129] In this embodiment, the number of second interconnection lines L2 can be any positive integer. Generally speaking, as many second interconnection lines L2 as possible can be set between the sources of the same group of switching tubes. The specific setting needs to be based on the actual layout and space conditions, and the embodiment of the present application does not limit this.

[0130] Each second interconnection line L2 may be a conductive connection line, such as a metal line such as a copper line, an aluminum line, or other conductive non-metallic line. Each second interconnection line L2 may be a bonding wire, which is not limited in the present embodiment.

[0131] Specifically, a second interconnection line L2 may be set between the sources of any two first upper switch tubes Q1, or only a second interconnection line L2 may be set between the sources of any two adjacent first upper switch tubes Q1. The second interconnection line L2 may also be set in any other possible manner, which is not limited in the embodiments of the present application.

[0132] For example, Figure 5As shown, a second interconnection line L2 is respectively set between the source electrodes of each switch tube in each group of switch tubes. Specifically, a second interconnection line L2 is respectively set at the source electrode of the first upper switch tube Q1 in the middle and connected to the source electrodes of the first upper switch tube Q1 on the left and right sides. A second interconnection line L2 is respectively set at the source electrode of the second upper switch tube Q2 in the middle and connected to the source electrodes of the second upper switch tube Q2 on the left and right sides. A second interconnection line L2 is respectively set at the source electrode of the first lower switch tube Q3 in the middle and connected to the source electrodes of the first lower switch tube Q3 on the left and right sides. A second interconnection line L2 is respectively set at the source electrode of the second lower switch tube Q4 in the middle and connected to the source electrodes of the second lower switch tube Q4 on the left and right sides.

[0133] However, this is merely an example for illustrating the location of the second interconnection line L2 , and does not mean that the half-bridge power module 100 provided in the embodiment of the present application can only be provided with the second interconnection line L2 in the manner shown in the example.

[0134] In this way, when inductive coupling occurs in each group of switch tubes, or when the inductance or voltage corresponding to the transmission lines of each switch tube in the same group is not equal, the inductance or voltage can be balanced by connecting the source electrodes of each switch tube in this group, thereby reducing the source inductance of each switch tube.

[0135] In this way, the problem of large interconnection inductance between the switch tubes can be avoided, thereby achieving the effect of improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation.

[0136] In a possible manner, in the same group of switch tubes, the gate-level binding wires used to connect the gates of the switch tubes can be connected to the gates of the respective switch tubes in the group of switch tubes respectively.

[0137] Assuming that the number of switch tubes in the same group of switch tubes is an odd number, the gate-level binding line used to connect the source of the switch tube can be routed through the source of a switch tube in the middle of the group of switch tubes. In this way, the consistency of the source parasitic parameters of the switch tubes on both sides can be improved, thereby improving the current sharing characteristics of the half-bridge power module 100.

[0138] In addition, it can be seen from the various embodiments provided in the present application that the present application solution does not need to increase the gate resistance of each switching tube to solve the gate-level oscillation between parallel chips when improving the current sharing characteristics of the half-bridge power module and reducing the possibility of oscillation. Therefore, the half-bridge power module provided by the present application also has the advantages of low cost and less change to the original circuit.

[0139] On the basis of the above implementation manner and based on the same concept, an inverter is also provided in an embodiment of the present application.

[0140] For example, see Figure 6An inverter 200 provided in an embodiment of the present application may include at least one half-bridge power module 100 provided in any of the above embodiments.

[0141] In this embodiment, the input end of the inverter 100 can be used to input direct current, and the output end of the inverter 100 is used to output alternating current.

[0142] The inverter 100 may be a single-phase inverter, a two-phase inverter, or a three-phase inverter.

[0143] For example, if the inverter 100 is a single-phase inverter, then the inverter 100 may include one half-bridge power module. If the inverter 100 is a two-phase inverter, then the inverter 100 may include two half-bridge power modules to convert each phase respectively. If the inverter 100 is a three-phase inverter, then the inverter 100 may include three half-bridge power modules to convert each phase respectively.

[0144] In addition, the inverter 100 may further include any other components such as a controller and a filter circuit for realizing the conversion function of converting direct current into alternating current, which is not limited in the embodiment of the present application.

[0145] It can be understood that the inverter 100 provided in the embodiment of the present application can realize the functions of any half-bridge power module provided in the above-mentioned embodiments and has corresponding beneficial effects, which will not be elaborated here.

[0146] An embodiment of the present application also provides a vehicle, which includes the inverter provided by any of the above embodiments.

[0147] In this embodiment, the vehicle may refer to a vehicle including a DC power battery or a vehicle that needs to convert DC power into AC power. For example, the vehicle may be a pure electric vehicle, an extended-range vehicle, or a plug-in hybrid vehicle, which is not limited in this embodiment of the present application.

[0148] It is understandable that the vehicle may also include other components for realizing any possible related functions, such as a power supply unit (which may include components such as a power battery and a transformer), a drive unit (which may include components such as a motor, a transmission device, wheels, etc.), a detection unit, a display unit, a prompt unit, etc., and the embodiments of the present application are not limited to this.

[0149] It can be understood that the vehicle provided in the embodiment of the present application can realize the functions of any half-bridge power module provided in the above-mentioned embodiments and has corresponding beneficial effects, which will not be elaborated here.

[0150] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0151] The above description is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments described herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A half-bridge power module, characterized in that: The half-bridge power module comprises: an insulating substrate, an upper bridge arm, a lower bridge arm, a first covering layer, a second covering layer, and a third covering layer; the upper bridge arm comprises a plurality of first upper switch tubes and a plurality of second upper switch tubes, and the lower bridge arm comprises a plurality of first lower switch tubes and a plurality of second lower switch tubes; Wherein, the first coating layer, the second coating layer, and the third coating layer are respectively attached to the upper surface of the insulating substrate; The first covering layer is connected to the second covering layer through the upper bridge arm, the second covering layer is connected to the third covering layer through the lower bridge arm, the first covering layer is used to connect to the positive electrode of the power supply, the second covering layer is used to output electric energy to an external device, and the third covering layer is used to connect to the negative electrode of the power supply; The first upper switch tubes and the second upper switch tubes are respectively arranged on the first covering layer, and the first lower switch tubes and the second lower switch tubes are respectively arranged on the second covering layer; and the source electrodes of the first upper switch tubes are connected, the source electrodes of the second upper switch tubes are connected, the source electrodes of the first lower switch tubes are connected, and the source electrodes of the second lower switch tubes are connected.

2. The half-bridge power module according to claim 1, characterized in that: The first coating comprises a first sub-coating and a second sub-coating; Each of the first upper switch tubes is respectively arranged on the first sub-cladding layer, and each of the second upper switch tubes is respectively arranged on the second sub-cladding layer.

3. The half-bridge power module according to claim 2, characterized in that: The half-bridge power module further comprises at least one first interconnection line; The first end of each of the first interconnection lines is connected to the first sub-cladding layer, and the second end of each of the first interconnection lines is connected to the second sub-cladding layer.

4. The half-bridge power module according to claim 2, characterized in that: The half-bridge power module further includes a first connecting clip; Each first connection end of the first connection clip is connected to each first upper switch tube, each second connection end of the first connection clip is connected to each second upper switch tube, and a third connection end of the first connection clip is connected to the second cover layer; A notch is provided on the first connecting clip in an area close to the third coating.

5. The half-bridge power module according to claim 1, characterized in that: The half-bridge power module further includes a second connecting clip; Each first connection end of the second connection clip is connected to each first lower switch tube respectively, each second connection end of the second connection clip is connected to each second lower switch tube respectively, and the third connection end of the second connection clip is connected to the third covering layer; A notch is provided on the second connecting clip in an area close to the first coating.

6. The half-bridge power module according to claim 1, characterized in that: The half-bridge power module also includes a plurality of second interconnection lines; At least one second interconnection line is disposed between the sources of the first upper switch tubes, between the sources of the second upper switch tubes, between the sources of the first lower switch tubes, and between the sources of the second lower switch tubes.

7. The half-bridge power module according to any one of claims 1 to 6, characterized in that: Each of the first upper switch tubes is symmetrically arranged with each of the second upper switch tubes; Each of the first lower switch tubes is symmetrically arranged with each of the second lower switch tubes.

8. The half-bridge power module according to any one of claims 1 to 6, characterized in that: The current transmission distance between a switch tube of any group of switch tubes in the upper bridge arm and the input point of the positive electrode of the power supply is negatively correlated with the current transmission distance between the connection points of the first covering layer and the second covering layer.

9. The half-bridge power module according to any one of claims 1 to 6, characterized in that: A current transmission distance between a switch tube in any group of switch tubes in the lower bridge arm and a connection point between the first cladding and the second cladding is negatively correlated with a current transmission distance between a connection point between the second cladding and the third cladding.

10. An inverter, characterized in that: The inverter comprises at least one half-bridge power module according to any one of claims 1-9.

11. A vehicle, characterized in that: The vehicle includes the inverter according to claim 10.

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