Sputtering tray and sputtering equipment

Abstract

The utility model provides a sputtering tray and sputtering equipment, comprising: a bottom plate used for being connected to the sputtering equipment, the bottom plate being provided with a first through hole; the sputtering coating ring is detachably installed on the bottom plate, the bottom plate and the sputtering coating ring are arranged in the first direction, a second through hole is formed in the sputtering coating ring, and the projection of the second through hole in the first direction is located in the projection of the first through hole in the first direction; the pressing ring cover is arranged on one side, far away from the bottom plate, of the sputtering coating ring, the pressing ring cover is used for pressing a wafer on the sputtering coating ring, the sputtering coating surface on the wafer is back to the pressing ring cover, and the sputtering coating surface is exposed in the second through hole. The sputtering tray disclosed by the utility model can be suitable for sputtering of wafers with various sizes.

Description

Technical Field

[0001] The utility model relates to the technical field of integrated circuits, in particular to a sputtering tray and a sputtering device. Background Art

[0002] The sputtering process is an essential physical metal deposition process for different products in the integrated circuit field. The working principle is to use argon ions to bombard metal targets in a high vacuum environment, and the metal ions are splashed onto the surface of the product for deposition. The advantages of the sputtering process are strong metal adhesion and good step coverage. Existing sputtering machines usually operate one size of product per cavity and one target. In the field of compound semiconductors, the size of wafers has not yet reached the height of silicon-based product sizes. For example: the maximum size of InP (indium phosphide) material is currently 3 inches, and the maximum size of SIC material is 8 inches, and 4-inch / 6-inch wafers are generally used. In order to solve the problem that a sputtering machine can operate products of different sizes with the same material, or products of different sizes with different materials, a sputtering tray that can adapt to wafers of various sizes is needed. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a sputtering tray that can adapt to the sputtering tray of wafers of various sizes.

[0004] The utility model also provides a sputtering device.

[0005] According to the sputtering tray of the first aspect embodiment of the utility model, it includes: a base plate, the base plate is used to be connected to the sputtering equipment, and a first through hole is opened on the base plate; a sputtering ring, the sputtering ring is detachably mounted on the base plate, the base plate and the sputtering ring are arranged along a first direction, a second through hole is opened on the sputtering ring, and the projection of the second through hole in the first direction is located within the projection of the first through hole in the first direction; a pressure ring cover, the pressure ring cover is arranged on the side of the sputtering ring away from the base plate, the pressure ring cover is used to press the wafer onto the sputtering ring, the sputtering surface on the wafer is facing away from the pressure ring cover, and the sputtering surface is exposed in the second through hole.

[0006] The sputtering tray according to the embodiment of the first aspect of the utility model has at least the following beneficial effects: when sputtering a wafer, metal ions are splashed through the second through holes on the sputtering ring to the wafer exposed in the second through holes for deposition; when sputtering wafers of different sizes, the second through holes on the sputtering ring require different sizes for corresponding adaptation; therefore, wafers of various sizes can be accommodated by replacing sputtering rings of different sizes on the base plate.

[0007] According to some embodiments of the present invention, a first groove is provided at one end of the first through hole close to the sputtering ring, and the sputtering ring is disposed in the first groove.

[0008] According to some embodiments of the present invention, the sputtering ring includes a first part and a second part, the first part is arranged in the first through hole, the second part is arranged in the groove, and the second part is provided with an abutment surface, which abuts against the bottom surface of the first groove.

[0009] According to some embodiments of the utility model, the plane of the end of the first part away from the second part is the first front side, the side of the bottom plate facing away from the pressure ring cover is the second front side, the first front side is flush with the second front side, the plane of the end of the second part away from the first part is the first reverse side, the side of the bottom plate facing away from the second front side is the second reverse side, and the first reverse side is flush with the second reverse side.

[0010] According to some embodiments of the present invention, the side annular surface of the first portion is in contact with the wall surface of the first through hole, and the side annular surface of the second portion is in contact with the wall surface of the first groove.

[0011] According to some embodiments of the present invention, a second groove is provided at one end of the second through hole close to the pressure ring cover, and the wafer is disposed in the second groove and abuts against the bottom surface of the second groove.

[0012] According to some embodiments of the present invention, the wall surface of the second groove is in contact with the side surface of the wafer.

[0013] According to some embodiments of the present invention, a limiting surface is further provided in the second groove, the limiting surface is in contact with the side surface of the wafer, and the normal direction of the limiting surface is perpendicular to the first direction.

[0014] According to some embodiments of the utility model, the sputtering tray also includes a fixing device and a snap-on device, the fixing device is used to fix the pressure ring cover on the sputtering ring, and the snap-on device is used to fix the sputtering ring on the base plate; the fixing device includes a bolt, a first screw hole and a second screw hole, the first bolt hole is arranged on the pressure ring cover, the second screw hole is arranged on the sputtering ring, the second screw hole is provided with a thread, the bolt passes through the first screw hole and cooperates with the thread in the second screw hole; the snap-on device includes a spring, a pressing plate and a connecting piece, the connecting piece is fixedly arranged on a side of the base plate facing the pressure ring cover, the pressing plate is slidably arranged on the connecting piece, the end of the spring away from the base plate is fixed to the connecting piece, and the end of the spring close to the base plate is fixed to the pressing plate.

[0015] The sputtering equipment according to the second aspect of the present invention comprises the sputtering tray described in any one of the above embodiments.

[0016] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the explosion structure of a sputtering tray of the utility model;

[0018] Figure 2 It is a structural schematic diagram of a sputtering device of the utility model;

[0019] Figure 3 It is a schematic diagram of the back structure of a sputtering tray of the utility model;

[0020] Figure 4 It is a front structural schematic diagram of a sputtering tray of the utility model;

[0021] Figure 5 The utility model is a schematic diagram of the cross-sectional structure of a sputtering ring of a sputtering tray.

[0022] Figure Number:

[0023] 1. Bottom plate; 11. First through hole; 12. First groove; 13. Second front side; 14. Second back side; 2. Sputtering ring; 21. Second through hole; 22. Second groove; 23. First part; 24. Second part; 25. First front side; 26. First back side; 27. Limiting surface; 3. Pressing ring cover; 4. Fixing device; 41. Bolt; 42. First screw hole; 43. Second screw hole; 5. Snap device; 51. Connector; 52. Pressing plate; 6. Wafer; 7. Cavity. DETAILED DESCRIPTION

[0024] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0025] In the description of the present invention, it should be understood that the descriptions involving orientation, such as the orientation or positional relationship indicated as up, down, etc., are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0026] In the description of the present utility model, "a plurality" means more than two. If there is a description of "first" or "second", it is only for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0027] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0028] The sputtering process is a high-speed, low-temperature sputtering method, which is widely used in the preparation technology of material surface treatment. The following is a detailed analysis of the sputtering process: The sputtering process is carried out in a vacuum environment, and an appropriate inert gas (such as argon Ar) is introduced as a medium. The inert gas is accelerated to hit the target material (usually a metal or alloy), so that the atoms on the surface of the target material are knocked out and deposited on the surface of the substrate (such as plastic, glass, etc.) to form a thin film. This process actually uses the sputtering phenomenon to achieve the purpose of making various thin films. Preparation stage: Prepare the corresponding equipment and materials, including the coating chamber, target material, substrate, power supply, control system, etc. Check and clean the equipment and materials to ensure that they are in good working condition. Vacuuming: Vacuum the coating chamber to remove air and impurities in it to ensure the cleanliness of the environment during the coating process. Heating and substrate cleaning: Place the substrate in the coating chamber, heat and clean it to remove impurities such as dirt and grease on the surface to ensure the quality of the coating. Target installation and adjustment: Install the target on the target holder and adjust the distance and angle between the target and the substrate to match the magnetron sputtering device. Sputtering deposition: Apply a high voltage between the target and the substrate to generate a high-speed particle flow on the target surface. The high-speed particle flow impacts the target surface, causing the atoms or molecules on the target surface to be sputtered out and deposited on the substrate surface to form a thin film. Magnetron sputtering increases the efficiency of ion bombardment by adding a magnetic field around the target to limit the electron movement path. Coating thickness control: During the coating process, the thickness of the coating is controlled to ensure the quality and performance of the film. Timing or weighing methods are usually used to control the thickness of the coating. Cooling and unloading the substrate: After the coating is completed, the substrate is cooled to prevent it from overheating, deformation or oxidation. Then the substrate is unloaded from the coating chamber for subsequent treatment or processing. High-quality coating: The sputtering process can obtain high-quality coatings with uniform thickness, density, high hardness, strong adhesion, good chemical inertness, and strong corrosion resistance. Sputtering technology is widely used in electronics, optics, mechanics, biomedicine and other fields. For example, in integrated circuit manufacturing, sputtering coating technology is used to prepare metallization layers; in optical coating, it is used to make high-reflection mirrors, anti-reflection films and filters.

[0029] Reference Figure 1 , Figure 2 and Figure 3 The sputtering tray in the first embodiment of the utility model includes: a base plate 1, a sputtering ring 2, and a pressure ring cover 3. The base plate 1 is used to be connected to the sputtering equipment, and a first through hole 11 is provided on the base plate 1; the sputtering ring 2 is detachably installed on the base plate 1, and the base plate 1 and the sputtering ring 2 are arranged along a first direction. A second through hole 21 is provided on the sputtering ring 2, and the projection of the second through hole 21 in the first direction is located within the projection of the first through hole 11 in the first direction; the pressure ring cover 3 is arranged on a side of the sputtering ring 2 away from the base plate 1, and the pressure ring cover 3 is used to press the wafer 6 on the sputtering ring 2, and the sputtering surface on the wafer 6 faces away from the pressure ring cover 3, and the sputtering surface is exposed in the second through hole 21. When sputtering the wafer 6, the wafer 6 will be placed in the cavity 7 of the sputtering equipment. The cavity 7 of the sputtering equipment is usually cylindrical, and the sputtering tray is vertically installed on the cylindrical cavity 7. During sputtering, the cylindrical cavity 7 rotates to ensure that each wafer 6 can be sputtered with metal. The cylindrical cavity 7 has multiple faces on which multiple sputtering trays can be installed to simultaneously operate multiple wafers 6 of different sizes with the same substrate. The base plates 1 are relatively fixed and are not easy to replace and combine. When adapting to wafers 6 of different sizes, first select the sputtering ring 2 corresponding to the wafer 6. Install the sputtering ring 2 on the base plate 1, and then press and fix the wafer 6 on the sputtering ring 2 through the pressing plate 52. Or first press and fix the wafer 6 on the sputtering ring 2 through the pressing plate 52, and then fix the sputtering ring 2 together with the wafer 6 on the base plate 1.

[0030] According to some embodiments of the utility model, a first groove 12 is provided at one end of the first through hole 11 close to the sputtering ring 2, and the sputtering ring 2 is provided in the first groove 12. By providing the first groove 12, the sputtering ring 2 is provided in the first groove 12 to position the sputtering ring 2, so that the sputtering ring 2 can be more accurately provided on the base plate 1. At the same time, after providing the first groove 12, the thickness of the sputtering tray can also be reduced. Furthermore, the thickness of the sputtering ring 2 in the first direction is not greater than the depth of the first groove 12 in the first direction. Thereby, the structural truss of the sputtering tray is made compact.

[0031] According to some embodiments of the utility model, the sputtering ring 2 includes a first portion 23 and a second portion 24, the first portion 23 is arranged in the first through hole 11, the second portion 24 is arranged in the groove, and the second portion 24 is provided with an abutting surface, which abuts against the bottom surface of the first groove 12. By arranging the first portion 23 in the first through hole 11, the sputtering ring 2 can be positioned more accurately, and after the first portion 23 is arranged in the first through hole 11, when the wafer 6 is arranged on the sputtering ring 2, the closer the distance between the sputtered side of the wafer 6 and the side of the bottom plate 1 facing away from the pressure ring cover 3 is, the better the sputtering effect can be obtained for the wafer 6. At the same time, the outer edge of the second portion 24 is protruding from the outer edge of the first portion 23, so that the abutting surface is formed to abut against the bottom of the first groove 12, so as to prevent the first portion 23 from passing through the first through hole 11.

[0032] According to some embodiments of the utility model, the plane of the end of the first part 23 away from the second part 24 is the first front side 25, the side of the bottom plate 1 facing away from the pressure ring cover 3 is the second front side 13, the first front side 25 is flush with the second front side 13, the plane of the end of the second part 24 away from the first part 23 is the first back side 26, the side of the bottom plate 1 facing away from the second front side 13 is the second back side 14, and the first back side 26 is flush with the second back side 14. When the first front side 25 is flush with the second front side 13, not only can the second front side 13 of the bottom plate 1 be made flatter, but also the sputtered surface on the wafer 6 can be made closer to the second front side 13, further improving the sputtering effect on the wafer 6. It should be noted that when the wafer 6 is sputtered, the metal will be splashed and deposited on the wafer 6 from multiple directions. When the wafer 6 sinks too much relative to the bottom plate 1 or the sputtering ring 2, more metal ions will be sputtered to the bottom plate 1 or the sputtering ring 2, thereby affecting the sputtering of the wafer 6. When the first portion 23 does not protrude from the second front side 13 on the bottom plate 1, the depth of the sinking of the wafer 6 relative to the bottom plate 1 or the sputtering ring 2 is the distance between the sputtering surface of the wafer 6 and the second front side 13, and the distance between the sputtering surface of the wafer 6 and the second front side 13 is equal to the distance between the sputtering surface of the wafer 6 and the first front side 25 plus the distance between the first front side 25 and the second front side 13. When the first portion 23 protrudes from the second front side 13 on the bottom plate 1, the depth of the sinking of the wafer 6 relative to the bottom plate 1 or the sputtering ring 2 is the distance between the sputtering surface of the wafer 6 and the first front side 25. When the first front side 25 is flush with the second front side 13, the depth of the sinking of the wafer 6 relative to the bottom plate 1 or the sputtering ring 2 is the distance between the sputtering surface of the wafer 6 and the second front side 13, which is also equal to the distance between the sputtering surface of the wafer 6 and the first front side 25.

[0033] According to some embodiments of the utility model, the side annular surface of the first part 23 fits with the wall surface of the first through hole 11, and the side annular surface of the second part 24 fits with the wall surface of the first groove 12. After the side annular surface of the first part 23 fits with the wall surface of the first through hole 11, the positioning of the sputtering ring 2 relative to the bottom plate 1 can be more accurate, and the side annular surface of the second part 24 fits with the wall surface of the first groove 12, so that the positioning of the sputtering ring 2 relative to the bottom plate 1 is more stable. Further, the side annular surface of the first part 23, the wall surface of the first through hole 11, the side annular surface of the second part 24 and the wall surface of the first groove 12 can be set as mutually matching conical surfaces, so that the first part 23 is easier to enter the first through hole 11, and the second part 24 is easier to enter the first groove 12.

[0034] According to some embodiments of the utility model, a second groove 22 is provided at one end of the second through hole 21 close to the pressure ring cover 3, and the wafer 6 is arranged in the second groove 22 and abuts against the bottom surface of the second groove 22. By setting the second groove 22, the position of the wafer 6 is limited to prevent the wafer 6 from moving relative to the sputtering ring 2, thereby improving the stability of the connection between the wafer 6 and the sputtering ring 2. At the same time, after the second groove 22 is set, the distance between the sputtering surface of the wafer 6 and the first front surface 25 is reduced, so that the metal can be sputtered onto the wafer 6 more evenly and quickly.

[0035] According to some embodiments of the present invention, the wall surface of the second groove 22 is in contact with the side surface of the wafer 6, and a limiting surface 27 is further provided in the second groove 22. The limiting surface 27 is in contact with the side surface of the wafer 6, and the normal direction of the limiting surface 27 is perpendicular to the first direction. The limiting surface 27 is further provided to allow the wafer 6 to rotate relative to the sputtering ring 2 in the second groove 22, thereby further improving the stability of the installation of the wafer 6.

[0036] According to some embodiments of the utility model, the sputtering tray also includes a fixing device 4 and a snap-fit ​​device 5, the fixing device 4 is used to fix the pressure ring cover 3 on the sputtering ring 2, and the snap-fit ​​device 5 is used to fix the sputtering ring 2 on the base plate 1; the fixing device 4 includes a bolt 41, a first screw hole 42 and a second screw hole 43, the first bolt 41 hole is arranged on the pressure ring cover 3, the second screw hole 43 is arranged on the sputtering ring 2, and the second screw hole 43 is provided with a thread, the bolt 41 passes through the first screw hole 42 and cooperates with the thread in the second screw hole 43; the snap-fit ​​device 5 includes a spring, a pressing plate 52 and a connecting member 51, the connecting member 51 is fixedly arranged on a side of the base plate 1 facing the pressure ring cover 3, the pressing plate 52 is slidably arranged on the connecting member 51, the end of the spring away from the base plate 1 is fixed to the connecting member 51, and the end of the spring close to the base plate 1 is fixed to the pressing plate 52. When the sputtering ring 2 is installed on the base plate 1, the pressing plate 52 is driven to compress the spring and move relative to the connecting member 51, so that the pressing plate 52 is away from the base plate 1. At this time, after the sputtering ring 2 is installed, the pressing plate 52 is released, and the spring drives the pressing plate 52 to move relative to the connecting member 51 and press on the sputtering ring 2, so that the sputtering ring 2 is fixed on the base plate 1. Furthermore, the pressing plate 52 can also be rotated relative to the connecting member 51, so that the installation of the sputtering ring 2 is more convenient. On the other hand, the buckle device 5 can also be set as an elastic pressing plate, and the first end of the pressing plate is set on the base plate 1, and the sputtering ring 2 is pressed by the second end of the pressing plate. Furthermore, the first end of the pressing plate is rotatably connected to the base plate 1. When the wafer 6 is fixed to the sputtering ring 2 by the pressure ring cover 3, the wafer 6 is first mounted on the sputtering ring 2, and then the pressure ring cover 3 is pressed on the wafer 6, and the pressure ring cover 3 is fixed to the sputtering ring 2 by the bolts 41. Furthermore, the fixing device 4 is evenly arranged around the outer edge of the pressure ring cover 3, so that the pressure ring cover 3 is fixed to the sputtering ring 2 more firmly.

[0037] The sputtering device according to the second embodiment of the utility model comprises the sputtering tray of any one of the above embodiments, so that the sputtering device can perform sputtering processing on wafers 6 of different sizes at the same time.

[0038] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. A sputtering tray, characterized in that: include: A bottom plate, the bottom plate is used to be connected to the sputtering equipment, and a first through hole is formed on the bottom plate; a sputtering ring, wherein the sputtering ring is detachably mounted on the base plate, the base plate and the sputtering ring are arranged along a first direction, a second through hole is opened on the sputtering ring, and a projection of the second through hole in the first direction is located within a projection of the first through hole in the first direction; A pressure ring cover is arranged on a side of the sputtering ring away from the base plate, and is used to press the wafer onto the sputtering ring, with the sputtering surface on the wafer facing away from the pressure ring cover, and the sputtering surface is exposed in the second through hole.

2. A sputtering tray according to claim 1, characterized in that: A first groove is disposed at one end of the first through hole close to the sputtering ring, and the sputtering ring is disposed in the first groove.

3. A sputtering tray according to claim 2, characterized in that: The sputtering ring includes a first portion and a second portion, wherein the first portion is disposed in the first through hole, and the second portion is disposed in the groove. An abutting surface is disposed on the second portion, and the abutting surface abuts against a bottom surface of the first groove.

4. A sputtering tray according to claim 3, characterized in that: The plane of the end of the first part away from the second part is the first front side, the side of the bottom plate facing away from the pressure ring cover is the second front side, the first front side is flush with the second front side, the plane of the end of the second part away from the first part is the first reverse side, the side of the bottom plate facing away from the second front side is the second reverse side, the first reverse side is flush with the second reverse side.

5. A sputtering tray according to claim 3, characterized in that: The side annular surface of the first portion is in contact with the wall surface of the first through hole, and the side annular surface of the second portion is in contact with the wall surface of the first groove.

6. The sputtering tray according to claim 1, characterized in that: A second groove is arranged at one end of the second through hole close to the pressure ring cover, and the wafer is arranged in the second groove and abuts against the bottom surface of the second groove.

7. A sputtering tray according to claim 6, characterized in that: The wall surface of the second groove is in contact with the side surface of the wafer.

8. A sputtering tray according to claim 7, characterized in that: A limiting surface is also provided in the second groove, the limiting surface is in contact with the side surface of the wafer, and the normal direction of the limiting surface is perpendicular to the first direction.

9. The sputtering tray according to claim 1, characterized in that: The sputtering tray further comprises a fixing device and a buckle device, wherein the fixing device is used to fix the pressure ring cover on the sputtering ring, and the buckle device is used to fix the sputtering ring on the bottom plate; The fixing device comprises a bolt, a first screw hole and a second screw hole, wherein the first screw hole is arranged on the pressure ring cover, the second screw hole is arranged on the sputtering ring, a thread is arranged on the second screw hole, and the bolt passes through the first screw hole and cooperates with the thread in the second screw hole; The buckle device includes a spring, a pressing plate and a connecting piece. The connecting piece is fixedly arranged on a side of the base plate facing the pressure ring cover, and the pressing plate is slidably arranged on the connecting piece. One end of the spring away from the base plate is fixed to the connecting piece, and one end of the spring close to the base plate is fixed to the pressing plate.

10. A sputtering device, characterized in that: A sputtering tray comprising the sputtering tray according to any one of claims 1 to 9.

Images