Wafer doping processing equipment

Abstract

The utility model provides wafer doping processing equipment, which relates to the field of wafer doping and comprises an electric heating furnace, a spraying assembly is arranged in the electric heating furnace, a placing assembly is arranged on the lower side of the spraying assembly, a collecting groove plate is arranged on the lower side of the placing assembly, a mechanical arm is arranged on the upper side of the electric heating furnace, and the mechanical arm is arranged on the lower side of the placing assembly. The outer end of the spraying assembly is connected with a liquid conveying pipe, the outer end of the liquid conveying pipe is connected with a liquid storage tank, the placing assembly comprises a drawing plate, a sliding strip is arranged at the lower end of the drawing plate, and the sliding strip is slidably inserted into the upper sides of guide rails arranged on the inner walls of the two sides of the electric heating furnace. And a handle is arranged at the edge of the front end of the drawing plate. The wafer batch doping device solves the problems that the processing efficiency is reduced and pollution exists due to the fact that doping materials need to be laid layer by layer in an existing wafer batch doping device.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer doping, in particular to a wafer doping processing device. Background Art

[0002] Doping is the process of adding a certain amount of impurities into semiconductor materials in order to change the electrical properties of semiconductor materials and obtain the desired electrical parameters. We often hear that certain performance can be optimized by improving the doping concentration somewhere. The main methods of doping are diffusion and ion implantation. Both methods are useful in discrete devices or integrated circuits, and the two can be said to be complementary. For example, diffusion can be used to form deep junctions, and ion implantation can form shallow junctions. After searching, the prior art (publication number: CN216074098U) records "a batch doping device for AlN wafers, which includes at least one container and a porous specimen carrier matched with each container; the porous specimen carrier adopts a densely and regularly arranged opening design; the device also includes a pressure cover and a cover sheet; one or more evenly arranged grooves are arranged at the bottom of the container for placing doping substances; the inner wall of the container is provided with a loading step, the loading step includes a step surface, the porous specimen carrier is placed on the step surface, and the container is divided into two upper and lower spaces; the aluminum nitride wafer to be doped is placed on the porous specimen carrier; the outer wall of the container is provided with a positioning step for overlapping and combining multiple layers of containers in pairs; the cover sheet is overlapped on the upper edge of the topmost container, and the pressure cover is covered on the cover sheet. The device can achieve uniform diffusion and doping, simultaneous doping of multiple elements, and simultaneous batch doping."

[0003] Although the batch doping device of chips in the prior art has achieved uniform diffusion and doping, simultaneous doping of multiple elements and simultaneous batch doping, there are still some shortcomings: the existing batch doping device of chips requires manual laying and stacking of a layer of dopant and a layer of chips, and then sending them into an electric heating furnace for heating operation, resulting in slow efficiency. At the same time, when taking out the materials, they also need to be removed layer by layer, which is more troublesome and there is a risk of touching dirt. Utility Model Content

[0004] In order to overcome the defects of the prior art, a wafer doping processing device is now provided to solve the problem that the existing wafer batch doping device requires doping material layering, which not only reduces the processing efficiency but also causes pollution problems.

[0005] To achieve the above-mentioned purpose, a wafer doping processing equipment is provided, including: an electric heating furnace, a spray assembly is provided inside the electric heating furnace, and a placement assembly is provided on the lower side of the spray assembly, and a collecting trough plate is provided on the lower side of the placement assembly, and a manipulator is provided on the upper side of the electric heating furnace, and the execution end of the manipulator is connected to a suction cup assembly, the outer end of the spray assembly is connected to an infusion tube, and the outer end of the infusion tube is connected to a liquid storage tank, the placement assembly includes a pull-out plate, and a slide bar is provided at the lower end of the pull-out plate, and the slide bar is slidably plugged into the upper side of a guide rail provided on the inner walls on both sides of the electric heating furnace, and a handle is provided on the front end edge of the pull-out plate.

[0006] Furthermore, electric heating plates are provided inside the upper and lower sides of the electric heating furnace, and an exhaust pipe is connected to one side wall of the electric heating furnace, and the exhaust pipe is located on the upper side of the spray assembly.

[0007] Furthermore, the spray assembly includes a spray pipe placed horizontally inside the electric heating furnace, and the lower end of the spray pipe is connected to a vertical branch pipe, and the lower end of the branch pipe is connected to a spray head.

[0008] Furthermore, a positioning block is provided at the upper end of the pull-out plate, a placement groove is provided at the upper side of the positioning block, and a porous loading plate is provided at the bottom of the placement groove.

[0009] Furthermore, the placement grooves are arranged in a matrix structure on the upper side of the pull-out plate, and the placement grooves correspond to the positions of the nozzles on the upper side one by one.

[0010] Furthermore, a collecting trough is provided on the upper side of the collecting trough plate, and a drain pipe is connected to the lower side of one end of the collecting trough plate, and the lower end of the drain pipe extends to the bottom of the electric heating furnace.

[0011] Furthermore, the suction cup assembly includes a rectangular hollow cup, and a suction cup is connected to the lower side of the rectangular hollow cup, and the arrangement of the suction cup corresponds to the placement groove.

[0012] The beneficial effects of the utility model are:

[0013] 1. When in use, open the front cover of the electric heating furnace, pull out the pull-out plate through the handle, then place the wafer to be doped in the placement slot, reset the pull-out plate, close the front cover, start the electric heating furnace for heating, and at the same time, pump the liquid tank into the spray pipe and branch pipe included in the spray assembly through the infusion pipe, and finally spray it to each wafer in the placement slot through the nozzle, so that the wafer is completely immersed in the liquid impurity source package in the liquid, and then the impurity source is penetrated into the wafer under the combined effect of heating and intervention gas, thereby realizing a more convenient operation process and improving processing efficiency;

[0014] 2. When taking out materials, open the front cover of the electric heating furnace, and then pull open the pull-out plate through the handle so that the wafers in the placement slot are completely exposed to the outside of the electric heating furnace, and then start the robot, and through the control program set by the host, drive the suction cup assembly to move to the upper side of the placement slot, so as to facilitate the adsorption and removal of the wafer from the placement slot, achieving the effect of facilitating material taking and preventing pollution. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the front cross-section structure of an embodiment of the utility model.

[0016] Figure 2 For the utility model embodiment Figure 1 Schematic diagram of the structure at point A in the middle.

[0017] Figure 3 It is a schematic diagram of the side structure of the spray assembly of an embodiment of the utility model.

[0018] Figure 4 It is a schematic diagram of the three-dimensional structure of the placement component of an embodiment of the utility model.

[0019] In the figure: 1. Electric heating furnace; 11. Exhaust pipe; 12. Guide rail; 2. Spray assembly; 21. Spray pipe; 22. Branch pipe; 23. Nozzle; 3. Placement assembly; 31. Pull-out plate; 32. Slide bar; 33. Handle; 34. Positioning block; 35. Placement slot; 4. Collection slot plate; 41. Drain pipe; 5. Manipulator; 51. Suction cup assembly; 6. Liquid storage tank; 61. Infusion tube. DETAILED DESCRIPTION

[0020] Reference Figures 1 to 4 As shown, the utility model provides a wafer doping processing equipment, including: an electric heating furnace 1, a spray component 2 is provided inside the electric heating furnace 1, and a placement component 3 is provided on the lower side of the spray component 2, and a collecting trough plate 4 is provided on the lower side of the placement component 3, and a manipulator 5 is provided on the upper side of the electric heating furnace 1, and the execution end of the manipulator 5 is connected to a suction cup component 51, the outer end of the spray component 2 is connected to an infusion tube 61, and the outer end of the infusion tube 61 is connected to a liquid storage tank 6, the placement component 3 includes a pull-out plate 31, and a slide bar 32 is provided at the lower end of the pull-out plate 31, and the slide bar 32 is slidably inserted on the upper side of the guide rail 12 arranged on the inner walls on both sides of the electric heating furnace 1, and a handle 33 is provided on the front end edge of the pull-out plate 31.

[0021] In this embodiment, the electric heating furnace 1 and its internal structure, as well as the external liquid storage tank 6 and the robot 5 constitute the main structure of the wafer doping processing equipment involved in this application.

[0022] It should be noted that the doping method involved in the present application is similar to the principle of the liquid source method in the prior art. The main difference lies in the combination method of the chip and the dopant. In the prior art, the dopant is made to flow in the quartz tube to achieve contact with the chip in the quartz tube, while in the present application, a spray contact method is adopted to achieve single-time multi-purpose contact and improve the doping efficiency.

[0023] Specifically, the moving position of the manipulator 5 is determined by the host setting program on the outside, and the pulling position of the pull-out plate 31 is determined by the mark on the outside of the slide bar 32, thereby ensuring that the suction cup assembly 51 can absorb and pick up materials under the setting program of the manipulator 5.

[0024] Specifically, a liquid impurity source is provided in the liquid storage tank 6 , and is pumped to the spray assembly 2 through an outer pump body.

[0025] like Figure 1 and Figure 3 As shown, electric heating plates are provided inside the upper and lower sides of the electric heating furnace 1, and an exhaust pipe 11 is connected to one side wall of the electric heating furnace 1, and the exhaust pipe 11 is located on the upper side of the spray assembly 2, and the spray assembly 2 includes a spray pipe 21 horizontally placed inside the electric heating furnace 1, and the lower end of the spray pipe 21 is connected to a longitudinal branch pipe 22, and the lower end of the branch pipe 22 is connected to a nozzle 23.

[0026] As a preferred embodiment, an exhaust pipe 11 is provided to facilitate exhausting the gas generated by the heating reaction, and multiple groups of nozzles 23 are used to achieve a one-time doping process for multiple wafers.

[0027] A positioning block 34 is provided at the upper end of the pull-out plate 31, and a placement groove 35 is opened on the upper side of the positioning block 34, and a porous carrier plate is provided at the bottom of the placement groove 35, the placement grooves 35 are arranged in a matrix structure on the upper side of the pull-out plate 31, and the placement grooves 35 correspond one-to-one with the positions of the nozzles 23 on the upper side, a collecting groove is opened on the upper side of the collecting groove plate 4, and a drain pipe 41 is connected to the lower side of one end of the collecting groove plate 4, and the lower end of the drain pipe 41 extends to the bottom of the electric heating furnace 1, the suction cup assembly 51 includes a rectangular hollow disk, and a suction cup is connected to the lower side of the rectangular hollow disk, and the arrangement of the suction cup corresponds to the placement groove 35.

[0028] Specifically, a through hole is provided on the lower side of the porous carrier plate, and the through hole passes through the pull-out plate 31, so that after the liquid impurity source enters the placement groove 35 and contacts and reacts with the wafer, the remaining liquid can flow downward into the collection groove plate 4 and then be discharged outward.

[0029] Specifically, the upper side end of the hollow disk is connected to the execution end of the robot 5 and the suction pipe, and the outer end of the pipe is connected to the vacuum suction device.

[0030] When in use, open the front cover of the electric heating furnace, pull out the pull-out plate through the handle, then place the wafer to be doped in the placement slot, reset the pull-out plate, close the front cover, start the electric heating furnace for heating, and at the same time pump the liquid from the storage tank into the spray pipe and branch pipe included in the spray assembly through the infusion tube, and finally spray it to each wafer in the placement slot through the nozzle, so that the wafer is completely immersed in the liquid impurity source package in the liquid, and then the impurity source penetrates into the wafer under the combined action of heating and intervening gas. When taking the material, open the front cover of the electric heating furnace, and then pull open the pull-out plate through the handle, so that the wafer in the placement slot is completely exposed to the outside of the electric heating furnace, and then start the manipulator, and through the control program set by the host, drive the suction cup assembly to move to the upper side of the placement slot, so as to facilitate the adsorption and removal of the wafer from the placement slot.

[0031] The chip doping processing equipment of the utility model can effectively solve the problem that the existing batch doping devices for chips need to lay down layers of doping materials, which not only reduces the processing efficiency but also causes pollution. It simplifies the operation process, improves the processing efficiency and avoids manual contact pollution on the basis of the existing chip doping processing equipment technology.

Claims

1. A wafer doping processing device, comprising: An electric heating furnace (1) is characterized in that: a spray assembly (2) is provided inside the electric heating furnace (1), and a placement assembly (3) is provided on the lower side of the spray assembly (2), and a collecting trough plate (4) is provided on the lower side of the placement assembly (3); a manipulator (5) is provided on the upper side of the electric heating furnace (1), and the execution end of the manipulator (5) is connected to a suction cup assembly (51); the outer end of the spray assembly (2) is connected to an infusion tube (61), and the outer end of the infusion tube (61) is connected to a liquid storage tank (6); the placement assembly (3) includes a pull-out plate (31), and a slide bar (32) is provided at the lower end of the pull-out plate (31), and the slide bar (32) is slidably plugged on the upper side of a guide rail (12) provided on the inner walls on both sides of the electric heating furnace (1); and a handle (33) is provided on the front edge of the pull-out plate (31).

2. A wafer doping processing device according to claim 1, characterized in that: Electric heating plates are provided inside the upper and lower sides of the electric heating furnace (1), and an exhaust pipe (11) is connected to one side wall of the electric heating furnace (1), and the exhaust pipe (11) is located on the upper side of the spray assembly (2).

3. The wafer doping processing equipment according to claim 1, characterized in that: The spray assembly (2) comprises a spray pipe (21) placed horizontally inside the electric heating furnace (1), the lower end of the spray pipe (21) is connected to a vertically placed branch pipe (22), and the lower end of the branch pipe (22) is connected to a spray head (23).

4. The wafer doping processing equipment according to claim 1, characterized in that: A positioning block (34) is provided at the upper end of the pull-out plate (31), a placement groove (35) is provided on the upper side of the positioning block (34), and a porous loading plate is provided at the bottom of the placement groove (35).

5. The wafer doping processing equipment according to claim 4, characterized in that: The placement grooves (35) are arranged in a matrix structure on the upper side of the pull-out plate (31), and the placement grooves (35) correspond to the positions of the spray heads (23) on the upper side one by one.

6. The wafer doping processing equipment according to claim 1, characterized in that: The upper side of the collecting tank plate (4) is provided with a collecting tank, and the lower side of one end of the collecting tank plate (4) is connected to a drain pipe (41), and the lower end of the drain pipe (41) extends to the bottom of the electric heating furnace (1).

7. The wafer doping processing equipment according to claim 1, characterized in that: The suction cup assembly (51) comprises a rectangular hollow cup, and a suction cup is connected to the lower side of the rectangular hollow cup, and the arrangement of the suction cup corresponds to the placement groove (35).

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