Wafer processing device

Abstract

The utility model discloses a wafer processing device, and belongs to the technical field of semiconductors. The wafer processing device comprises a carrying table, a shock insulation pad and an ultrasonic device, wherein the carrying table is used for carrying a crystal ingot with a modified layer; the ultrasonic device is arranged above the carrying table, the ultrasonic device can generate transverse vibration waves, and the transverse vibration waves are used for vibrating along the crystal ingot and enabling cracks of the modified layer to extend in the transverse direction; and the bottom of the carrying table is fixedly arranged on the shock insulation pad. According to the utility model, the cracks of the modified layer formed on the crystal ingot by the laser pulse grow and are connected along the transverse direction, the longitudinal growth of the cracks is avoided, the production efficiency of the modified layer is improved, the laser pulse does not need to be intensively emitted, and the wafer processing period is shortened.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, especially relates to a wafer processing device. BACKGROUND

[0002] SiC semiconductor has the characteristics of wide band gap, high breakdown voltage and high thermal conductivity, and can maintain high efficiency in high-power and high-frequency environments, and the demand in the field of high-power microwave radio frequency devices and high-voltage power electronic devices has increased significantly. However, SiC has extremely high hardness, with a Mohs hardness of 9 or more, which is the second hardest material after diamond, posing higher challenges to processing.

[0003] SiC forms an ingot after processes such as crystal growth, rounding, and cutting, with a thickness of 20 mm (technology is developing towards thicker thicknesses, such as 40 mm), and the ingot needs to be separated into 350 μm standard wafers for subsequent thin film growth processes.

[0004] Existing mature technologies use wire cutting schemes such as diamond wire or mortar wire to cut. The wire cutting technology needs to use wire processing, and SiC material with a diameter similar to the cutting wire will be ground into debris with a width of about 100 μm. At the same time, due to the cutting process of the wire saw, about 80 μm of rough undulations and structural damage will be formed on both sides of the SiC material, which must be removed by grinding and polishing, resulting in a total material loss of more than 43%. Moreover, due to the extremely high hardness of SiC, the processing time of a wafer is more than 1 hour.

[0005] The current laser cutting scheme can effectively reduce the loss layer, but the connection effect between the cracks of the modified layer formed by the laser pulse in the ingot is not good.

[0006] Therefore, there is an urgent need to provide a wafer processing device to solve the above problems. UTILITY MODEL CONTENTS

[0007] The utility model aims at providing a wafer processing device, which makes the cracks of the modified layer formed by the laser pulse on the ingot grow and connect in the transverse direction, avoids longitudinal growth of the cracks, not only improves the production efficiency of the modified layer, but also does not need to emit laser pulses intensively, shortens the period of wafer processing.

[0008] To achieve the above-mentioned purpose, the following technical scheme is provided:

[0009] The wafer processing device comprises:

[0010] A carrier is used to hold the ingot with a modified layer;

[0011] An ultrasonic device is arranged above the carrier, and the ultrasonic device can generate transverse vibration waves, which are used to vibrate the ingot and make the cracks of the modified layer expand in the transverse direction.

[0012] The bottom of the carrier is fixedly arranged on the shock insulation pad.

[0013] As an alternative to the wafer processing device, the ultrasonic device comprises an ultrasonic generator and a vibration transmission medium arranged in sequence in the height direction, and the vibration transmission medium is used to contact the surface of the crystal ingot.

[0014] As an alternative to the wafer processing device, the vibration transmission medium is a semi-liquid substance.

[0015] As an alternative to the wafer processing device, the semi-liquid substance comprises a gel.

[0016] As an alternative to the wafer processing device, the semi-liquid substance comprises a water-containing flexible physical water-absorbing substance, and the water-containing flexible physical water-absorbing substance comprises at least one of water-containing cotton, paper, sponge and hair bundle.

[0017] As an alternative to the wafer processing device, the ultrasonic device further comprises a water distributor, and a plurality of water leakage holes are uniformly arranged in the water distributor, and the water leakage holes are used to drip liquid to the vibration transmission medium.

[0018] As an alternative to the wafer processing device, the ultrasonic generator comprises a shell with a damping ring and a piezoelectric ceramic, one end of the damping ring away from the shell is connected with the water distributor, a fixed section of the piezoelectric ceramic is located in the shell and connected with the water distributor, and a movable section of the piezoelectric ceramic passes through the accommodating cavity of the water distributor and is connected with the vibration transmission medium.

[0019] As an alternative to the wafer processing device, the wafer processing device further comprises a lifting assembly, the ultrasonic device further comprises an adapter connector, one end of the adapter connector is connected with the ultrasonic generator, and the other end of the adapter connector is connected with a movable end of the lifting assembly, and the lifting assembly is used to adjust the height of the ultrasonic device.

[0020] As an alternative to the wafer processing device, the wafer processing device further comprises a base with a gantry, and a plurality of groups of the ultrasonic device are arranged on the gantry.

[0021] As an alternative to the wafer processing device, a first set of moving modules is arranged on the base, a second set of moving modules is arranged on the first set of moving modules, and the shock insulation pad at the bottom of the carrier is rotationally arranged on the second set of moving modules; and / or

[0022] A plurality of vacuum adsorption holes are arranged on the carrier.

[0023] Compared with the prior art, the wafer processing device has the following beneficial effects:

[0024] The wafer processing device provided by the utility model, the ingot with the modification layer formed inside by laser cutting is placed on the loading platform, the position of the ingot which has been scanned by laser is assisted to crack expansion by the ultrasonic device, so that each crack after modification is connected by transverse growth, and longitudinal growth of the crack is avoided. By adding the ultrasonic device, the pulse interval of the laser lens assembly can be increased, which helps to speed up the modification processing speed of the whole wafer. The peeling unit does not need large peeling force by assisting the crack expansion of the ultrasonic device, the structure difficulty of the peeling unit is reduced, and the volume of the peeling unit can be smaller. The shock isolation pad is additionally arranged at the bottom of the loading platform, which is used for isolating the influence of vibration from the bottom of the loading platform on the crack growth inside the ingot, so that the crack inside the ingot is only affected by the transverse vibration wave from the ultrasonic device. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical scheme in the embodiments of the utility model, the drawings needed to be used in the description of the embodiments of the utility model will be briefly introduced, and obviously, the drawings in the following description are only some embodiments of the utility model, and other drawings can be obtained according to the contents of the embodiments of the utility model and these drawings by those skilled in the art without creating labor.

[0026] Figure 1 It is the assembly diagram of the wafer processing device in the embodiments of the utility model;

[0027] Figure 2 It is the axonometric view of the laser lens assembly and the ultrasonic device processing ingot in the embodiments of the utility model;

[0028] Figure 3 It is the side view of the laser lens assembly and the ultrasonic device processing ingot in the embodiments of the utility model;

[0029] Figure 4 It is the sectional view of the ultrasonic device in the embodiments of the utility model;

[0030] Figure 5 It is the structure schematic view of the water homogenizer in the embodiments of the utility model;

[0031] Figure 6 It is the explosion view of the ingot and the loading platform in the embodiments of the utility model.

[0032] Reference signs:

[0033] 100, ingot; 101, modification layer;

[0034] 1, carrier; 2, laser lens assembly; 3, ultrasonic device; 4, base; 41, gantry; 42, first set of moving modules; 43, second set of moving modules; 44, shock isolation pad; 5, ingot positioning device; 6, ingot height measuring device;

[0035] 11, vacuum suction hole;

[0036] 31, ultrasonic generator; 311, shell; 312, piezoelectric ceramic; 313, shock absorbing ring; 32, vibration transmission medium; 33, water homogenizer; 331, annular cavity; 332, water leakage hole; 333, water inlet; 334, containing cavity; 34, water inlet pipe; 35, lifting assembly; 36, adapter connector; 37, fastener. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the technical scheme in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0038] In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the product of the present application is used, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" and the like are only used for differentiation in description, and cannot be understood as indicating or implying relative importance. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0039] In the description of the present application, it should also be noted that, unless otherwise specified and limited, the terms "provided", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected. For ordinary skilled persons in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0040] Embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the drawings are exemplary and are only used to explain the present application and cannot be understood as a limitation of the present application.

[0041] The existing technical solution of laser splitting wafer CN115302108A-laser processing device, SiC crystal ingot structure is hexagonal single crystal SiC, wherein the C face and the upper surface of the crystal ingot form an angle α, different crystal forms have different angles, which can be 0°, 3°, 4° or 6°, etc., the C axis is perpendicular to the C face, and the center axis of the crystal ingot forms an angle α along the A direction. When the laser emits a pulse to the same depth as the thickness of the SiC wafer, a modified layer is formed along the C face, and the modified layer expands to form a crack. Along the laser scanning path, the pulse is emitted, the crack is connected, and finally a peeling surface is formed. The technical solution has the problems of insufficient crack development and the tendency of longitudinal crack, which increases the peeling difficulty and increases the loss layer.

[0042] In order to make the crack formed by the laser pulse on the crystal ingot grow and connect in the transverse direction, avoid longitudinal growth of the crack, improve the production efficiency of the modified layer, and shorten the period of wafer processing without intensive emission of laser pulses, the present embodiment provides a wafer processing device, which will be described below in combination with Figures 1 to 6 The specific content of the present embodiment will be described in detail.

[0043] As Figures 1 to 3 shown, the wafer processing device in the present embodiment includes a stage 1, a shock isolation pad 44 and an ultrasonic device 3. The stage 1 is used to hold the crystal ingot 100 with the modified layer 101. The ultrasonic device 3 is arranged above the stage 1, and the ultrasonic device 3 can generate transverse vibration waves. The transverse vibration waves generated by the ultrasonic device 3 are used to vibrate along the crystal ingot 100 and make the crack of the modified layer 101 expand in the transverse direction. The bottom of the stage 1 is fixedly arranged on the shock isolation pad 44.

[0044] Optionally, a laser lens assembly 2 can be arranged above the carrier 1 to pulse scan the ingot 100 and generate cracks. The ingot 100 to be laser cut is placed on the carrier 1, and the laser lens assembly 2 above the ingot 100 pulses to form cracks at a set thickness inside the ingot 100. One pulse forms one crack, and multiple cracks form the modified layer 101. For the positions of the ingot 100 that have been laser scanned, the ultrasonic device 3 is used to assist crack propagation, so that the modified cracks are all connected in the transverse direction, and longitudinal growth of the cracks is avoided. By adding the ultrasonic device 3, the pulse interval of the laser lens assembly 2 can be increased, which helps to speed up the modification processing speed of the whole wafer. The ultrasonic device 3 assists crack propagation, so that the peeling unit does not need a large peeling force, the structure difficulty of the peeling unit is reduced, and the volume of the peeling unit can be smaller. By adding a shock isolation pad 44 at the bottom of the carrier 1, the influence of vibration from the bottom of the carrier 1 on the growth of the cracks inside the ingot 100 is isolated, so that the cracks inside the ingot 100 are only affected by the transverse vibration wave from the ultrasonic device 3.

[0045] In the embodiment, the laser lens assembly 2 emits pulses, and the ultrasonic vibration assists the modified cracks to grow and connect in the transverse direction, so that the pulse interval can be increased to 2.5 μm. The modification process can be completed within 10 minutes, and the total processing time of a single wafer is controlled within 15 minutes.

[0046] Further, as shown in Figures 2 to 5 The ultrasonic device 3 includes an ultrasonic generator 31 and a vibration transmission medium 32 arranged in sequence in the height direction. The vibration transmission medium 32 is used to contact the surface of the ingot 100. When the ingot 100 on the carrier 1 moves directly below the ultrasonic device 3, the ultrasonic generator 31 transmits transverse ultrasonic waves to the ingot 100 through the vibration transmission medium 32 to assist the cracks to grow in the transverse direction. The ultrasonic transducer is an energy conversion device that converts electrical energy into mechanical vibration energy of ultrasonic waves. The ultrasonic transducer is an important part of the ultrasonic generator 31 and is mainly used to generate and emit ultrasonic waves. The ultrasonic transducer is usually composed of a piezoelectric ceramic 312, a shell 311, and a wire. The piezoelectric ceramic 312 is the core part of the transducer, which converts electrical energy into mechanical vibration energy by piezoelectric effect. When an alternating voltage is applied to the piezoelectric ceramic 312 through the wire, it will deform and produce mechanical vibration, which in turn generates ultrasonic waves and propagates to the surrounding medium.

[0047] For example, the vibration transmission medium 32 in the embodiment can be fixed to the lower end of the piezoelectric ceramic 312 by a fastener 37 such as a bolt or a screw.

[0048] Exemplarily, the vibration transmission medium 32 in the embodiment is a semi-liquid substance. The semi-liquid substance has a large ultrasonic energy load, good directivity, and high utilization rate of unit ultrasonic energy. The semi-liquid substance has the following technical effects: (1) high ultrasonic energy transmission efficiency. The transmission of ultrasonic waves by the semi-liquid substance can reduce or avoid the splashing effect of water caused by ultrasonic waves, so that a large amount of ultrasonic energy is transmitted to the wafer, and the attenuation is small. In the traditional way, the water flow transmits the ultrasonic waves, and the ultrasonic energy has a peak value, that is, the ultrasonic energy cannot be too high (higher than the adsorption force between water molecules), and if it is too high, the water flow will splash into water, and the transmission effect cannot be good. Similarly, the ultrasonic frequency cannot be too low, and if it is too low, the ultrasonic energy cannot have a good crack propagation effect. By transmitting ultrasonic waves through the semi-liquid substance, higher energy ultrasonic transmission can be achieved, because the adsorption force of the semi-liquid substance to water is greater than the adsorption force between water molecules, and the water on the semi-liquid substance is not easy to disperse and splash. (2) Good directivity. In the traditional way of using water flow to transmit ultrasonic waves, the water flow has no directivity, so that the ultrasonic transmission direction is unstable, and the operation is difficult. The semi-liquid substance has certain solid properties and can well direct the transmission of ultrasonic waves, which is convenient for precise directional crack propagation operation. (3) High utilization rate of unit ultrasonic energy. In the traditional way of using water flow to transmit ultrasonic waves, there are two parts of energy consumption: 1) water flow dispersion and splashing, consuming ultrasonic energy, and 2) a large amount of water flow will be collected on the wafer, absorbing ultrasonic energy. The semi-liquid substance transmits ultrasonic waves without generating a large amount of water splash and a large amount of water collection, and under the condition of the directivity of the semi-liquid substance, most of the ultrasonic energy is directly transmitted to the wafer surface, which can greatly improve the utilization rate of ultrasonic energy.

[0049] Exemplarily, the semi-liquid substance includes a gel, and the gel includes a hydrogel. The hydrogel is fixed to the lower surface of the water homogenizer 33, and the hydrogel is a material with strong water absorption but does not hinder the transmission of ultrasonic waves (or other water-absorbing materials or other liquids). The hydrogel contacts the upper surface of the ingot 100, the ultrasonic wave generator 31 (which can be a piezoelectric ceramic 312 or other vibration generating device) is started, and ultrasonic waves are transmitted to the ingot 100 through the hydrogel. The internal cracks of the ingot 100 grow and connect with each other under the influence of the ultrasonic waves.

[0050] Exemplarily, the semi-liquid substance includes a water-containing flexible physical water-absorbing substance, and the water-containing flexible physical water-absorbing substance includes at least one of water-containing cotton, paper, sponge, and hair bundle (similar to a writing brush). The water-containing flexible physical water-absorbing substance is a physical cavity water-absorbing structure (similar to a molecular sieve), and the adsorption capacity depends on the average radius of the cavity, and the adsorption capacity is positively correlated with the specific surface area. The water-absorbing structure cannot effectively lock water after water absorption, and the water absorption is limited.

[0051] Further, the ultrasonic device 3 further comprises a water distributor 33, the water distributor 33 is uniformly provided with a plurality of water leakage holes 332 for dripping liquid to the vibration transmission medium 32. By adding the water distributor 33, the vibration transmission medium 32 can be kept wet. Understandably, the water gel moves on the wafer, and the water will be lost, and a small amount of supplement can be added.

[0052] Further, the water distributor 33 is further provided with a containing cavity 334 and an annular cavity 331, the ultrasonic generator 31 comprises a shell 311 provided with a damping ring 313 and a piezoelectric ceramic 312, the damping ring 313 is connected to the water distributor 33 away from the shell 311, the fixed section of the piezoelectric ceramic 312 is located in the shell 311 and connected to the water distributor 33, and the movable section of the piezoelectric ceramic 312 passes through the containing cavity 334 of the water distributor 33 and is connected to the vibration transmission medium 32. Understandably, the containing cavity 334 is used for passing through the lower end of the piezoelectric ceramic 312. The water inlet 333 of the water distributor 33 and the plurality of water leakage holes 332 arranged in the circumferential direction are in communication with the annular cavity 331, and the water inlet 333 on the side wall of the water distributor 33 is connected with a water inlet pipe 34, through which liquid can be timely supplemented into the water distributor 33.

[0053] Further, the wafer processing device further comprises a lifting assembly 35, and the ultrasonic device 3 further comprises an adapter connector 36, one end of the adapter connector 36 is connected to the ultrasonic generator 31, and the other end of the adapter connector 36 is connected to the movable end of the lifting assembly 35, and the lifting assembly 35 is used for adjusting the height of the ultrasonic device 3. When the wafer 100 on the loading platform 1 completes laser scanning, the ultrasonic device 3 is driven by the lifting assembly 35 to move freely in the vertical direction and stop. Since the damping ring 313 is arranged between the shell 311 and the water distributor 33, the vibration generated by the ultrasonic generator 31 can only be transmitted downward through the vibration transmission medium 32, avoiding the vibration generated by the ultrasonic generator 31 from being transmitted upward to the lifting assembly 35, thereby reducing the moving precision of the lifting assembly 35.

[0054] Illustratively, the lifting assembly 35 comprises a lead screw sliding table module or a telescopic cylinder. The ultrasonic device 3 is installed on the sliding table of the lead screw sliding table module or the piston rod of the telescopic cylinder, and when the wafer 100 is located directly below the ultrasonic device 3, the height of the ultrasonic device 3 is adjusted by the lead screw sliding table module or the telescopic cylinder.

[0055] Further, as Figure 1As shown, the wafer processing apparatus also includes a base 4 with a gantry 41, on which several sets of laser lens assemblies 2 and several sets of ultrasonic devices 3 are mounted. The number of laser lens assemblies 2 and ultrasonic devices 3 added to the gantry 41 according to actual usage requirements helps to further improve wafer processing efficiency. The distance between the laser lens assemblies 2 and the ultrasonic devices 3 is constant. The upper ends of the ultrasonic devices 3 and the laser lens assemblies 2 can be integrated or separate.

[0056] Furthermore, a first set of moving modules 42 is provided on the base 4, and a second set of moving modules 43 is provided on the first set of moving modules 42. The vibration isolation pad 44 located at the bottom of the stage 1 is rotatably mounted on the second set of moving modules 43. By adding the first set of moving modules 42 and the second set of moving modules 43, it is convenient to move the stage 1 to the target position, with the first direction and the second direction being perpendicular to each other. In this embodiment, the laser lens assembly 2 can scan the ingot 100 along a straight path along the first direction or the second direction using either the first set of moving modules 42 or the second set of moving modules 43, or it can scan the ingot 100 along an arc path by rotating the stage 1.

[0057] Optionally, such as Figure 6 As shown, the stage 1 is provided with a number of vacuum adsorption holes 11. The crystal ingot 100 is firmly adsorbed and fixed on the stage 1 through the vacuum adsorption holes 11, so that when the ultrasonic device 3 transmits vibration to the crystal ingot 100 on the stage 1, the crystal ingot 100 is prevented from shifting.

[0058] The working principle of the wafer processing apparatus in this embodiment is as follows: the ingot 100 is placed on the stage 1, and the stage 1 is moved to the processing position by the first set of moving modules 42 and the second set of moving modules 43. Then, the ingot is positioned by the ingot positioning device 5, and the ingot height measuring device 6 measures the height of the ingot 100. Then, the ingot 100 begins pulse scanning along the set laser scanning path. For the positions that have been laser-scanned, the ultrasonic device 3 is used to cause the modified cracks to grow and connect laterally. Laser modification and ultrasonic-assisted crack propagation continue until the entire surface is processed. Then, it enters the peeling unit, where the ingot 100 and the wafer are separated by mechanical pulling force. Then, it enters the grinding unit, where the peeled surface is ground to achieve the roughness required for laser incidence.

[0059] It should be noted that the above only the preferred embodiments of the present application and the use of technical principles. Those skilled in the art will understand that the present application is not limited to the specific examples described herein, those skilled in the art can be made various obvious changes, re-adjustment and replacement without departing from the scope of the present application. Therefore, although the above embodiments of the present application has been described in more detail, but the present application is not limited to the above examples, without departing from the concept of the present application, but also can include more other equivalent embodiments, and the scope of the present application is determined by the appended claims.

Claims

1. Wafer processing apparatus, characterized in that The application relates to a wafer processing device. The wafer processing device comprises a carrier (1) for placing a crystal ingot (100) with a modified layer (101); an ultrasonic device (3) arranged above the carrier (1), the ultrasonic device (3) being capable of generating transverse vibration waves for vibrating the crystal ingot (100) and making cracks in the modified layer (101) expand in a transverse direction; and a shock isolation pad (44) on which the bottom of the carrier (1) is fixedly arranged. The ultrasonic device (3) comprises an ultrasonic wave generator (31) and a vibration transmission medium (32) arranged in sequence in a height direction, and the vibration transmission medium (32) is used for contacting the surface of the crystal ingot (100). The vibration transmission medium (32) is a semi-liquid substance.

2. The wafer processing apparatus of claim 1, wherein The semi-liquid substance comprises a gel.

3. The wafer processing apparatus of claim 2, wherein The semi-liquid substance comprises a water-containing flexible physical water-absorbing substance, which comprises at least one of water-containing cotton, paper, sponge and hair bundle.

4. The wafer processing apparatus of claim 3, wherein The ultrasonic device (3) further comprises a water homogenizer (33) with a plurality of water leakage holes (332) uniformly arranged in the water homogenizer (33), and the water leakage holes (332) are used for dripping liquid into the vibration transmission medium (32).

5. The wafer processing apparatus of claim 3, wherein The ultrasonic wave generator (31) comprises a shell (311) with a damping ring (313) and a piezoelectric ceramic (312), the damping ring (313) is connected to the water homogenizer (33) away from one end of the shell (311), the fixed section of the piezoelectric ceramic (312) is located in the shell (311) and connected to the water homogenizer (33), and the movable section of the piezoelectric ceramic (312) passes through the accommodating cavity (334) of the water homogenizer (33) and is connected to the vibration transmission medium (32).

6. A wafer processing apparatus according to any one of claims 3 to 5, wherein The wafer processing device further comprises a lifting assembly (35), and the ultrasonic device (3) further comprises an adapter connector (36), one end of the adapter connector (36) is connected to the ultrasonic wave generator (31), the other end of the adapter connector (36) is connected to the movable end of the lifting assembly (35), and the lifting assembly (35) is used for adjusting the height of the ultrasonic device (3).

7. The wafer processing apparatus of claim 6, wherein The wafer processing device further comprises a base (4) with a gantry (41), and a plurality of groups of the ultrasonic device (3) are arranged on the gantry (41).

8. The wafer processing apparatus of claim 6, wherein The base (4) is provided with a first set of moving modules (42), the first set of moving modules (42) is provided with a second set of moving modules (43), and the shock isolation pad (44) at the bottom of the carrier (1) is rotationally arranged on the second set of moving modules (43); and / or 9. The wafer processing apparatus of claim 1, wherein The carrier (1) is provided with a plurality of vacuum adsorption holes (11).

10. The wafer processing apparatus of claim 9, wherein ​ ​

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