Light-emitting device with double-patterned insulating layer structure

Abstract

The utility model relates to a light-emitting device with a double-patterned insulating layer structure. The light-emitting device comprises a first semiconductor layer, a second semiconductor layer and an active layer, the first conducting layer is in ohmic contact with the second semiconductor layer, the reflecting layer is electrically connected with the first conducting layer, the second conducting layer is electrically connected with the reflecting layer, and a plurality of protrusions facing the first conducting layer are arranged on the second conducting layer; the first insulating layer covers part of the surface of the second semiconductor layer and is partially exposed out of the device; the third insulating layer covers part of the surface of the first insulating layer and part of the surface of the reflecting layer, the third insulating layer is inevitably covered in the vertical direction of an area which is not covered with the first insulating layer, and a double-patterned insulating layer structure is formed based on the raised first insulating layer and the third insulating layer. According to the utility model, metal migration paths are reduced; and the patterned sunken region can release part of structural stress, so that the metal fracture ratio is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor lasers, in particular to a light-emitting device with a double-patterned insulating layer structure. Background Art

[0002] At present, there are few channels for lateral expansion of current in light-emitting devices, and the heat is unevenly distributed. Therefore, increasing the lateral expansion of current inside the device and improving the uneven heat distribution are important ways to increase the service life of the device.

[0003] The lateral expansion channel of the current inside the light-emitting device is relatively single. Adding a patterned microstructure can change the direction of the single current flow, increase the path of the current flow, thereby increasing the lateral expansion and making the heat more evenly dispersed. However, the metal diffusion area of ​​the non-patterned structure is large, the structural stress is large, and the device generates a lot of heat. In addition, the expansion of the single-channel current may cause current congestion in the local area, uneven heat dispersion, and affect the reliability and service life of the device. Utility Model Content

[0004] Based on the technical problems existing in the background technology, the utility model proposes a light-emitting device with a double patterned insulating layer structure, which reduces the direct contact area of ​​the metal and reduces the metal migration path; and the patterned recessed area can release part of the structural stress and reduce the metal fracture ratio.

[0005] The utility model provides a light emitting device with a double patterned insulating layer structure, comprising a first semiconductor layer, a second semiconductor layer and an active layer; the active layer is located between the first semiconductor layer and the second semiconductor layer;

[0006] a first conductive layer forming an ohmic contact with the second semiconductor layer, a reflective layer forming an electrical connection with the first conductive layer, a second conductive layer forming an electrical connection with the reflective layer, and an electrode forming an electrical connection with the second conductive layer; the first conductive layer, the reflective layer, the second conductive layer, and the electrode together constitute a first electrical connection layer, and the second conductive layer is provided with a plurality of protrusions facing the first conductive layer;

[0007] A recess penetrating the second semiconductor layer and the active layer and extending into the first semiconductor layer;

[0008] A first insulating layer covering a portion of the surface of the second semiconductor layer and partially exposed to the outside of the device; a second insulating layer covering the side wall of the recess and one side of the first electrical connection layer; a third insulating layer covering a portion of the surface of the first insulating layer and a portion of the surface of the reflective layer, wherein the vertical direction of the area not covered by the first insulating layer must be covered by the third insulating layer, and a double patterned insulating layer structure is formed between the protruding first insulating layer and the third insulating layer,

[0009] A third conductive layer partially contacts the surface of the second insulating layer and forms an electrical connection with the first semiconductor layer, and a substrate in contact with the third conductive layer.

[0010] Preferably, when the substrate is made of a non-conductive material, the third conductive layer is the second electrical connection layer; when the substrate is conductive, the third conductive layer and the substrate together constitute an electrical connection layer.

[0011] Preferably, the ratio of the area of ​​the region not covered by the first insulating layer to the area of ​​the region covered by the third insulating layer in the vertical direction thereof is 1:10-2.

[0012] Preferably, the reflective layer comprises a multi-layer structure, and the second conductive layer, the third conductive layer and the electrode all comprise a multi-layer metal structure.

[0013] Preferably, the recess is provided at two locations, and the double patterned insulating layer structure is located at two sides of the recess.

[0014] The beneficial effects of the present invention are:

[0015] The third insulating layer must be covered along the vertical direction of the protrusion area not covered by the first insulating layer to form a double patterned insulating layer structure, so that the direct contact area of ​​the metal is reduced and the metal migration path is reduced; and the patterned recessed area can release part of the structural stress and reduce the metal fracture ratio.

[0016] The current passes through the double patterned insulating layer structure, which can effectively change the flow direction, increase the multi-channel current flow path, increase the lateral expansion of the current, and make the heat of the light-emitting device more evenly dispersed. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of the prior art.

[0018] Figure 2 This is a schematic structural diagram of a light-emitting device with a double patterned insulating layer structure proposed by the utility model.

[0019] Figure 3 Schematic diagram of current channel in the prior art.

[0020] Figure 4 This is a schematic diagram of a current channel of a light-emitting device with a double patterned insulating layer structure proposed by the utility model.

[0021] Figure 5 for Figure 4 Enlarged picture of the box.

[0022] Figure 6 This is a schematic diagram of a double patterned insulating layer structure in a light-emitting device with a double patterned insulating layer structure proposed by the utility model.

[0023] Figure 7 This is a first example diagram of a double patterned insulating layer structure.

[0024] Figure 8 This is a second example diagram of a double patterned insulating layer structure.

[0025] Fig. 9 This is a third example diagram of a double patterned insulating layer structure.

[0026] In the figure: 1, first semiconductor layer, 2, second semiconductor layer, 3, substrate, 4, active layer, 5, depression, 6, protrusion, 7, first conductive layer, 8, reflective layer, 9, second conductive layer, 10, third conductive layer, 11, electrode, 12, first insulating layer, 13, second insulating layer, 14, third insulating layer. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0028] Reference Figure 1-9 , a light emitting device with a double patterned insulating layer structure, comprising a first semiconductor layer 1, a second semiconductor layer 2 and an active layer 4; the active layer 4 is located between the first semiconductor layer 1 and the second semiconductor layer 2; comprising the following:

[0029] A first conductive layer 7 forming an ohmic contact with the second semiconductor layer 2, a reflective layer 8 forming an electrical connection with the first conductive layer 7, a second conductive layer 9 forming an electrical connection with the reflective layer 8, and an electrode 11 forming an electrical connection with the second conductive layer 9; the first conductive layer 7, the reflective layer 8, the second conductive layer 9, and the electrode 11 together constitute a first electrical connection layer, and a plurality of protrusions 6 facing the first conductive layer 7 are provided on the second conductive layer 9;

[0030] A recess 5 penetrating the second semiconductor layer 2 and the active layer 4 and extending to the inside of the first semiconductor layer 1;

[0031] A first insulating layer 12 covering a portion of the surface of the second semiconductor layer 2 and partially exposed to the outside of the device; a second insulating layer 13 covering the side wall of the recess 5 and one side of the first electrical connection layer; a third insulating layer 14 covering a portion of the surface of the first insulating layer 12 and a portion of the surface of the reflective layer 8, wherein the vertical direction of the area not covered by the first insulating layer 12 must cover the third insulating layer 14, and a double patterned insulating layer structure is formed between the first insulating layer 12 and the third insulating layer 14 based on the protrusion 6,

[0032] A third conductive layer 10 partially contacts the surface of the second insulating layer 13 and forms an electrical connection with the first semiconductor layer 1 , and a substrate 3 contacts the third conductive layer 10 .

[0033] In the present invention, when the substrate 3 is made of non-conductive material, the third conductive layer 10 is the second electrical connection layer; when the substrate 3 is conductive, the third conductive layer 10 and the substrate 3 together form an electrical connection layer.

[0034] Reference Figure 1-4 In the prior art, there is no patterned structure (single-channel current expansion): single-channel current expansion may cause current congestion in local areas, uneven heat dispersion, and affect device reliability and service life. The utility model adds a double-patterned insulating layer structure. The current passes through the double-patterned insulating layer structure, which can effectively change the flow direction, increase the multi-channel current flow path, increase the lateral expansion of the current, and make the heat of the light-emitting device more evenly dispersed.

[0035] In the present utility model, reference Figure 6 The ratio of the area of ​​the region not covered by the first insulating layer 12 to the area of ​​the region covered by the third insulating layer 14 in the vertical direction is 1:10-2. The double patterned insulating layer structure includes: Figure 7 , 8 , the irregular figures shown in 9 and the derived figures of the same type.

[0036] In the present invention, the recess 5 is provided at two locations, and the double patterned insulating layer structure is located at two sides of the recess 5 .

[0037] In the present invention, the reflective layer 8 comprises a multi-layer structure, and the second conductive layer 9, the third conductive layer 10, and the electrode 11 all comprise a multi-layer metal structure.

[0038] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A light emitting device having a double patterned insulating layer structure, comprising a first semiconductor layer (1), a second semiconductor layer (2) and an active layer (4); the active layer (4) is located between the first semiconductor layer (1) and the second semiconductor layer (2); characterized in that: These include: A first conductive layer (7) forming an ohmic contact with the second semiconductor layer (2), a reflective layer (8) forming an electrical connection with the first conductive layer (7), a second conductive layer (9) forming an electrical connection with the reflective layer (8), and an electrode (11) forming an electrical connection with the second conductive layer (9); the first conductive layer (7), the reflective layer (8), the second conductive layer (9), and the electrode (11) together constitute a first electrical connection layer, and the second conductive layer (9) is provided with a plurality of protrusions (6) facing the first conductive layer (7); A recess (5) penetrating the second semiconductor layer (2) and the active layer (4) and extending into the first semiconductor layer (1); A first insulating layer (12) covering a portion of the surface of the second semiconductor layer (2) and partially exposed to the outside of the device; a second insulating layer (13) covering the side wall of the recess (5) and one side of the first electrical connection layer; and a third insulating layer (14) covering a portion of the surface of the first insulating layer (12) and a portion of the surface of the reflective layer (8), wherein the area not covered by the first insulating layer (12) must be covered by the third insulating layer (14) in the vertical direction, and a double patterned insulating layer structure is formed between the first insulating layer (12) and the third insulating layer (14) based on the protrusion (6). A third conductive layer (10) partially contacts the surface of the second insulating layer (13) and forms an electrical connection with the first semiconductor layer (1), and a substrate (3) in contact with the third conductive layer (10).

2. A light emitting device with a double patterned insulating layer structure according to claim 1, characterized in that: When the substrate (3) is a non-conductive material, the third conductive layer (10) is a second electrical connection layer; when the substrate (3) is conductive, the third conductive layer (10) and the substrate (3) together form an electrical connection layer.

3. The light emitting device with a double patterned insulating layer structure according to claim 1, characterized in that: The ratio of the area of ​​the region not covered by the first insulating layer (12) to the area of ​​the region covered by the third insulating layer (14) in the vertical direction thereof is 1:10-2.

4. The light emitting device with a double patterned insulating layer structure according to claim 1, characterized in that: The recess (5) is provided at two locations, and the double patterned insulating layer structure is located on both sides of the recess (5).

5. The light emitting device with a double patterned insulating layer structure according to claim 1, characterized in that: The reflective layer (8) comprises a multi-layer structure, and the second conductive layer (9), the third conductive layer (10), and the electrode (11) all comprise a multi-layer metal structure.

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