Dual-wavelength semiconductor laser module and laser

Abstract

The utility model relates to a dual-wavelength semiconductor laser module and a laser. The semiconductor laser module comprises a first laser module, a second laser module, a dichroscope, a focusing lens, an output optical fiber and a shell. The first laser module comprises a first laser chip, a first fast axis collimating lens and a first slow axis collimating lens; the second laser module comprises a second laser chip, a second fast axis collimating lens and a second slow axis collimating lens. The first laser chip generates first laser, the second laser chip generates second laser, and under the same propagation distance, the slow axis width of the first laser before collimation of the first slow axis collimating lens is smaller than the slow axis width of the second laser before collimation of the second slow axis collimating lens. The focal length of the first collimating lens group is set to be larger than that of the second collimating lens group, so that the slow axis width of the second laser penetrating through the second collimating lens group is approximate to that of the first laser penetrating through the first collimating lens group, and the incident angle of the combined laser when the combined laser enters the optical fiber is conveniently limited.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor laser devices, in particular to a dual-wavelength semiconductor laser module and a laser. Background Art

[0002] Semiconductor lasers have the advantages of small size, light weight, long life, high reliability, and high electro-optical conversion efficiency. They are widely used in industrial processing, biomedicine, national defense and other fields. Since different materials have different absorption efficiencies for specific wavelengths of lasers, using coupled lasers of different wavelengths to process materials is beneficial to improving processing efficiency. The existing technology uses various optical elements to collimate, combine, and focus two or more wavelength lasers, and then outputs a coupled laser beam containing two or more wavelength lasers from the optical fiber. At present, the slow axis widths of the laser spots generated by the chips of the two wavelength lasers are different. The slow axis widths of the two wavelength lasers after collimation by the collimating lens are quite different, which is not conducive to controlling the angle and width of the laser when it enters the optical fiber, and the laser coupling efficiency is low. Utility Model Content

[0003] In order to solve the above problems, it is necessary to provide a dual-wavelength semiconductor laser module and a laser to improve the coupling efficiency of the laser.

[0004] According to a first aspect of the present application, a dual-wavelength semiconductor laser module is provided, comprising a first laser module, a second laser module and a dichroic mirror. The first laser module comprises a first laser generating unit and a first collimating lens group, the first laser generating unit is used to generate a first laser directed to the first collimating lens group, and the first collimating lens group is used to collimate the first laser. The second laser module comprises a second laser generating unit and a second collimating lens group, the second laser generating unit is used to generate a second laser, and the second collimating lens group is used to collimate the second laser. The dichroic mirror is located on the first axis, tilted relative to the first laser and the second laser, and is used to reflect the second laser through the first laser, or reflect the first laser through the second laser, and combine the collimated first laser and second laser.

[0005] The first collimating lens group includes a first fast-axis collimating lens and a first slow-axis collimating lens, and the first fast-axis collimating lens is arranged on the light-emitting surface of the first laser generating unit. The second collimating lens group includes a second fast-axis collimating lens and a second slow-axis collimating lens, and the second fast-axis collimating lens is arranged on the light-emitting surface of the second laser generating unit. Under the same propagation distance, the slow-axis width of the second laser before collimation by the second slow-axis collimating lens is greater than the slow-axis width of the first laser before collimation by the first slow-axis collimating lens, and the focal length of the second slow-axis collimating lens is less than the focal length of the first slow-axis collimating lens.

[0006] According to the two lasers with different slow axis widths before collimation, the present application selects slow axis collimating lenses with different focal lengths to collimate the two wavelengths of lasers respectively. Compared with the prior art which uses slow axis collimating lenses with the same focal length, the present application can obtain two laser beams with similar slow axis widths, which is convenient for beam combining, focusing and coupling operations after collimation, and can better control the angles of lasers of different wavelengths when entering the optical fiber.

[0007] In some embodiments, the first laser generating unit includes a first laser chip, the first collimating lens group includes a first fast-axis collimating lens and a first slow-axis collimating lens, and a first laser chip, a first fast-axis collimating lens, a first slow-axis collimating lens and a dichroic mirror are arranged in sequence along the first axis.

[0008] In some embodiments, the first laser generating unit includes at least two first laser chips, the first collimating lens group includes at least two first fast axis collimating lenses and at least two first slow axis collimating lenses, and the at least two first laser chips are arranged along the direction of the first axis.

[0009] In some embodiments, the first laser module further includes at least two reflectors, one reflector corresponding to one first laser chip, and arranged at an angle relative to the laser output direction of the first laser chip. At least two reflectors and a dichroic mirror are arranged along a first axis to direct the first laser toward the dichroic mirror.

[0010] In some embodiments, a corresponding reflector, a first slow-axis collimating lens, a first fast-axis collimating lens, and a first laser chip are sequentially spaced apart along the second axis, and the second axis is perpendicular to the first axis.

[0011] In some embodiments, the second laser generating unit includes a second laser chip, the second collimating lens group includes a second fast-axis collimating lens and a second slow-axis collimating lens, a dichroic mirror, a second slow-axis collimating lens, a second fast-axis collimating lens and a second laser chip are arranged in sequence along the second axis, and the second axis is perpendicular to the first axis.

[0012] In some embodiments, the second laser generating unit includes at least two second laser chips, the second collimating lens group includes at least two second fast axis collimating lenses and at least two second slow axis collimating lenses, and the at least two second laser chips are arranged along the first axis.

[0013] In some embodiments, the second laser module has at least two steering mirrors, at least two steering mirrors are arranged in a direction parallel to the first axis, a steering mirror, a second slow axis collimating lens, a second fast axis collimating lens and a second laser chip are arranged in sequence along the second axis, and the second axis is perpendicular to the first axis.

[0014] In some embodiments, the dual-wavelength semiconductor laser module also includes a housing, a focusing lens and an output optical fiber. The first laser module, the second laser module, the dichroic mirror, the focusing lens and part of the output optical fiber are located in the housing. The focusing lens is used to focus the first laser and the second laser. The focused first laser and the second laser are output from the output optical fiber.

[0015] According to the second aspect of the present application, a dual-wavelength semiconductor laser is provided, comprising any dual-wavelength semiconductor laser module described in the first aspect of the present application, a heat dissipation module and a housing. The heat dissipation module and the dual-wavelength semiconductor laser module are located in the housing, and the heat dissipation module is in contact with the dual-wavelength semiconductor laser module.

[0016] The dual-wavelength semiconductor laser module disclosed in the present application includes a first laser module, a second laser module and a dichroic mirror, wherein the first laser module includes a first laser generating unit and a first collimating lens group, and the second laser module includes a second laser generating unit and a second collimating lens group, wherein the first laser generating unit generates a first laser, and the second laser generating unit generates a second laser, wherein the first laser passes through the first collimating lens group and is collimated by the first collimating lens group, and the second laser passes through the second collimating lens group and is collimated by the second collimating lens group. The collimated first laser and the second laser are combined by the dichroic mirror, and since the divergence angle of the first laser is smaller than that of the second laser, the light strip widths of the first laser generating unit and the second laser generating unit are the same, and under the same propagation distance, the slow axis width of the first laser before collimation by the first slow axis collimating lens is smaller than the slow axis width of the second laser before collimation by the second slow axis collimating lens, and by setting the focal length of the first collimating lens group to be larger than the focal length of the second collimating lens group, the slow axis widths of the second laser after passing through the second collimating lens group and the first laser after passing through the first collimating lens group are similar, thereby obtaining a dual-wavelength combined laser with similar slow axis widths. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The utility model is further described below in conjunction with the accompanying drawings and embodiments.

[0018] Figure 1 A schematic diagram of a semiconductor laser module according to a first embodiment of the present application;

[0019] Figure 2 A schematic diagram of a semiconductor laser module according to a second embodiment of the present application;

[0020] Figure 3 A schematic diagram of a semiconductor laser module according to a third embodiment of the present application;

[0021] Figure 4 is a schematic diagram of a semiconductor laser module according to a fourth embodiment of the present application;

[0022] Figure 5A schematic diagram of a semiconductor laser according to an embodiment of the present application.

[0023] Description of main components:

[0024] 100. Semiconductor laser;

[0025] 10. Semiconductor laser module;

[0026] 1. first laser module; 11. first laser generating unit; 111. first laser chip; 12. first collimating lens group; 121. first fast axis collimating lens; 122. first slow axis collimating lens; 13. reflecting mirror;

[0027] 2. Second laser module; 21. Second laser generating unit; 211. Second laser chip; 22. Second collimating lens group; 221. Second fast axis collimating lens; 222. Second slow axis collimating lens; 23. Steering mirror;

[0028] 3. Dichroic mirror;

[0029] 4. Shell;

[0030] 5. Focusing lens;

[0031] 6. Output optical fiber;

[0032] 20. Heat dissipation module;

[0033] 30. Shell;

[0034] A, first laser; B, second laser; C, combined laser;

[0035] X, first axis; Y, second axis. DETAILED DESCRIPTION

[0036] In order to more clearly illustrate the purpose, technical solution and advantages of the utility model, hereinafter, the present application describes the embodiments of the utility model with reference to the accompanying drawings, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. It should be understood that these embodiments are used to explain the technical principles of the utility model, which are only exemplary and cannot be understood as limiting the technology disclosed in this application or the application and use of the technology.

[0037] It should be noted that the terms "first", "second", etc. in the specification and claims of this application are only used to distinguish different objects, and do not imply or require a specific relationship or order between these objects. In addition, the term "vertical" is used to describe an ideal state between two objects. In actual production or use, the two objects may be in a state that is approximately vertical.

[0038] See also Figure 1 In a first aspect of the present application, a dual-wavelength semiconductor laser module 10 is provided, comprising a first laser module 1, a second laser module 2 and a dichroic mirror 3, wherein the first laser module 1 comprises a first laser generating unit 11 and a first collimating lens group 12, the second laser module 2 comprises a second laser generating unit 21 and a second collimating lens group 22, the first laser generating unit 11 generates a first laser A, and the second laser generating unit 21 generates a second laser B.

[0039] A first collimating lens group 12 and a second collimating lens group 22 are respectively arranged on the optical paths of the first laser A and the second laser B to collimate the first laser A and the second laser B respectively. The first collimating lens group 12 includes at least one first fast-axis collimating lens 121 and at least one first slow-axis collimating lens 122. The first fast-axis collimating lens 121 is attached to the light-emitting surface of the first laser generating unit 11 to collimate the fast axis of the first laser A. The first slow-axis collimating lens 122 is arranged after the first fast-axis collimating lens 121 to perform slow-axis collimation on the first laser A after fast-axis collimation. The second collimating lens group 22 includes at least one second fast-axis collimating lens 221 and at least one second slow-axis collimating lens 222. The second fast-axis collimating lens 221 collimates the fast axis of the second laser B. The second slow-axis collimating lens 222 is arranged after the second fast-axis collimating lens 221 to perform slow-axis collimation on the second laser B after fast-axis collimation.

[0040] After the first laser A passes through the first collimating lens group 12 and the second laser B passes through the second collimating lens group 22, they are both emitted toward the dichroic mirror 3. The dichroic mirror 3 is tilted relative to the first laser A and the second laser B, and reflects the second laser B through the first laser A, or reflects the first laser A through the second laser B. The dichroic mirror 3 combines the first laser A and the second laser B to obtain a combined laser C containing the first laser A and the second laser B.

[0041] The incident angle of the first laser A and the second laser B entering the optical fiber must be within the range of the receiving angle allowed by the optical fiber. The size of the laser incident angle depends on the spot size before the laser is focused. The first collimating lens group 12 and the second collimating lens group 22 respectively limit the spot size of the first laser A and the second laser B, so that the laser spot is controlled within a suitable size. Since the distance from the first fast axis collimating lens 121 to the first laser generating unit 11 and the distance from the second fast axis collimating lens 221 to the second laser generating unit 21 are relatively small, the focal lengths of the first fast axis collimating lens 121 and the second fast axis collimating lens 221 are similar, and the fast axis widths of the first laser A and the second laser B are similar. The distance from the first slow axis collimating lens 122 to the first laser generating unit 11 and the distance from the second slow axis collimating lens 222 to the second laser generating unit 21 are relatively far. Since the wavelengths of the first laser A and the second laser B are different, the corresponding slow axis widths and slow axis divergence half angles are also different. Therefore, slow axis collimating lenses with different focal lengths are selected to collimate the first laser A and the second laser B respectively, so as to limit the incident angles of the first laser A and the second laser B on the end face of the optical fiber respectively and improve the coupling efficiency.

[0042] Under the same propagation distance, the slow axis width of the first laser A before collimation by the first slow axis collimating lens 122 is smaller than the slow axis width of the second laser B before collimation by the second slow axis collimating lens 222, and the focal length of the first slow axis collimating lens 122 is larger than the second slow axis collimating lens 222. The distance from the first slow axis collimating lens 122 to the first laser generating unit 11 is smaller, and the distance from the second slow axis collimating lens 222 to the second laser generating unit 21 is larger. The slow axis widths of the first laser A and the second laser B respectively intercepted by the first slow axis collimating lens 122 and the second slow axis collimating lens 222 are similar, so that the slow axis widths of the first laser A and the second laser B after collimation and beam combining are similar, thereby facilitating limiting the incident angle of the beam combining laser C when entering the optical fiber.

[0043] The first laser generating unit 11 includes at least one first laser chip 111 , and one first laser chip 111 corresponds to one first fast-axis collimating lens 121 and one first slow-axis collimating lens 122 .

[0044] See also Figure 1 and Figure 2 In some embodiments, the number of the first laser chip 111 of the first laser generating unit 11 is one. Along the first axis X, the first laser chip 111, the first fast-axis collimating lens 121, the first slow-axis collimating lens 122 and the dichroic mirror 3 are arranged in sequence at intervals. The first laser A does not need to be turned, thereby reducing the power loss of the first laser A.

[0045] See also Figure 3 and Figure 4In some other embodiments, the number of the first laser chips 111 of the first laser generating unit 11 is at least two, the first collimating lens group 12 includes at least two first fast axis collimating lenses 121 and at least two first slow axis collimating lenses 122, the first laser module 1 also includes at least two reflectors 13, each first laser chip 111 corresponds to a first fast axis collimating lens 121, a first slow axis collimating lens 122 and a reflector 13, the reflector 13 is tilted relative to the laser output direction of the first laser chip 111, and is used to adjust the propagation direction of the first laser A so that the first laser A is turned to the dichroic mirror 3. At least two reflectors 13 are arranged along the first axis X to form a reflector array, the dichroic mirror 3 is arranged behind the reflector array and is arranged along the first axis X with the reflector array, and receives and passes through the at least two first lasers A reflected by the at least two reflectors 13. A corresponding reflector 13, a first slow axis collimating lens 122, a first fast axis collimating lens 121 and a first laser chip 111 are sequentially arranged at intervals along the second axis Y, and the second axis Y intersects the first axis X. Optionally, the second axis Y is perpendicular to the first axis X to make the spatial arrangement more regular and facilitate the heat dissipation of the first laser chip 111. By setting the reflector 13, multiple columns of first lasers A emitted by at least two first laser chips 111 can be spatially combined to obtain a combined laser C with higher power.

[0046] The second laser generating unit 21 includes at least one second laser chip 211 , and one second laser chip 211 corresponds to one second fast-axis collimating lens 221 and one second slow-axis collimating lens 222 .

[0047] See also Figure 1 and Figure 3 In some embodiments, the second laser generating unit 21 includes a second laser chip 211, the second collimating lens group 22 includes a second fast-axis collimating lens 221 and a second slow-axis collimating lens 222, the dichroic mirror 3, a second slow-axis collimating lens 222, a second fast-axis collimating lens 221 and a second laser chip 211 are sequentially arranged along the second axis Y, the second axis Y intersects with the first axis X, preferably, the second axis Y is perpendicular to the first axis X, and the second laser B generated by the second laser chip 211 is emitted toward the dichroic mirror 3 along an incident angle of 45° to facilitate beam combining.

[0048] See also Figure 2 and Figure 4In other embodiments, the second laser generating unit 21 includes at least two second laser chips 211, the second collimating lens group 22 includes at least two second fast axis collimating lenses 221 and at least two second slow axis collimating lenses 222, and the second laser module 2 further includes at least two steering mirrors 23, which are tilted relative to the laser output direction of the second laser chip 211, and at least two steering mirrors 23 are arranged in a direction parallel to the first axis X, and are used to adjust the propagation direction of the second laser B so that the second laser B is turned to the dichroic mirror 3. A steering mirror 23, a second slow axis collimating lens 222, a fast axis collimating lens and a second laser chip 211 are sequentially arranged in a direction perpendicular to the first axis X.

[0049] The semiconductor laser module 10 also includes a shell 4, a focusing lens 5 and an output optical fiber 6. The first laser module 1, the second laser module 2, the dichroic mirror 3, the focusing lens 5 and part of the output optical fiber 6 are located in the shell 4. The first laser A generated by the first laser module 1 and the second laser B generated by the second laser module 2 are combined by the dichroic mirror 3 and shaped by the focusing lens 5 into a combined laser C with a smaller spot size. The combined laser C is output outside the module through the output optical fiber 6.

[0050] See also Figure 5 In the second aspect of the present application, a dual-wavelength semiconductor laser 100 is provided. The semiconductor laser 100 includes a heat dissipation module 20, a housing 30, and a semiconductor laser module 10 in any one of the embodiments of the first aspect. The heat dissipation module 20 and the semiconductor laser module 10 are located in the housing 30. The housing 30 protects the heat dissipation module 20 and the semiconductor laser module 10 to prevent damage to the semiconductor laser 100 caused by external factors. The heat dissipation module 20 is close to the shell wall of the semiconductor laser module 10, which is provided with a laser chip, and takes away the heat generated by the semiconductor module to prevent various abnormal conditions caused by excessive temperature.

[0051] In summary, the present application provides a dual-wavelength semiconductor laser module 10 and a laser, wherein the semiconductor laser module 10 includes a first laser module 1, a second laser module 2, a dichroic mirror 3, a focusing lens 5, an output optical fiber 6, and a housing 4. The first laser module 1 includes a first laser chip 111 and a first collimating lens group 12, the second laser module 2 includes a second laser chip 211 and a second collimating lens group 22, the first laser chip 111 emits a first laser A, the second laser chip 211 emits a second laser B, the first laser A and the second laser B pass through the dichroic mirror 3 and the focusing lens 5, enter the output optical fiber 6, and are finally output to the outside of the housing 4. The first collimating lens group 12 includes a first fast-axis collimating lens 121 and a first slow-axis collimating lens 122, and the second collimating lens group 22 includes a second fast-axis collimating lens 221 and a second slow-axis collimating lens 222. Since the slow axis width of the first laser A before collimation is smaller than the slow axis width of the second laser B at the same propagation distance, the focal length of the first slow axis collimating lens 122 is set to be larger than the second slow axis collimating lens 222, so that the slow axis widths of the second laser B after passing through the second collimating lens group 22 and the first laser A after passing through the first collimating lens group 12 are similar, thereby obtaining a dual-wavelength combined laser C with similar slow axis widths, which is convenient for limiting the incident angle of the combined laser C when entering the optical fiber.

[0052] It should be understood that the above-mentioned embodiments disclosed in the present application are only for the convenience of description and example, and the technical solutions obtained by those skilled in the art by simple modification or equivalent substitution of the above-mentioned embodiments should fall within the scope of protection required by the present application.

Claims

1. A dual-wavelength semiconductor laser module, characterized in that: The dual-wavelength semiconductor laser module comprises a first laser module, a second laser module and a dichroic mirror, wherein: The first laser module includes a first laser generating unit and a first collimating lens group, the first laser generating unit is used to generate a first laser directed to the first collimating lens group, the first collimating lens group is used to collimate the first laser, the first collimating lens group includes a first fast-axis collimating lens and a first slow-axis collimating lens, the first fast-axis collimating lens is attached to the light-emitting surface of the first laser generating unit, and the first slow-axis collimating lens is located on the optical path of the first laser; The second laser module includes a second laser generating unit and a second collimating lens group, the second laser generating unit is used to generate a second laser directed to the second collimating lens group, the second collimating lens group is used to collimate the second laser, the second collimating lens group includes a second fast-axis collimating lens and a second slow-axis collimating lens, the second fast-axis collimating lens is attached to the light emitting surface of the second laser generating unit, the second slow-axis collimating lens is located on the optical path of the second laser, under the same propagation distance, the slow-axis width of the second laser before collimation by the second slow-axis collimating lens is greater than the slow-axis width of the first laser before collimation by the first slow-axis collimating lens, and the focal length of the second slow-axis collimating lens is less than the focal length of the first slow-axis collimating lens; The dichroic mirror is located on the optical path of the first laser and the second laser. The dichroic mirror is tilted relative to the first laser and the second laser, and is used to reflect the second laser through the first laser, or reflect the first laser through the second laser, so as to combine the first laser and the second laser. The dichroic mirror is located on a first axis, and the first axis is parallel to the long axis direction of the dual-wavelength semiconductor laser module.

2. The dual-wavelength semiconductor laser module according to claim 1, characterized in that: The first laser generating unit includes a first laser chip, the first collimating lens group includes a first fast-axis collimating lens and a first slow-axis collimating lens, and the first laser chip, the first fast-axis collimating lens, the first slow-axis collimating lens and the dichroic mirror are arranged in sequence along the first axis.

3. The dual-wavelength semiconductor laser module according to claim 1, characterized in that: The first laser generating unit includes at least two first laser chips, the first collimating lens group includes at least two first fast-axis collimating lenses and at least two first slow-axis collimating lenses, each of the first laser chips corresponds one to one with one fast-axis collimating lens and one with one first slow-axis collimating lens, and at least two of the first laser chips are arranged along the direction of the first axis.

4. The dual-wavelength semiconductor laser module according to claim 3, characterized in that: The first laser module also includes at least two reflectors, one of which corresponds to one of the first laser chips and is tilted relative to the laser output direction of the first laser chip. At least two of the reflectors and the dichroic mirror are arranged along the first axis to direct the first laser toward the dichroic mirror. The corresponding reflectors, one of the first slow-axis collimating lenses, one of the first fast-axis collimating lenses, and one of the first laser chips are arranged in sequence along the second axis, and the second axis is perpendicular to the first axis.

5. The dual-wavelength semiconductor laser module according to claim 1, characterized in that: The second laser generating unit includes a second laser chip, the second collimating lens group includes a second fast-axis collimating lens and a second slow-axis collimating lens, the dichroic mirror, a second slow-axis collimating lens, a second fast-axis collimating lens and a second laser chip are arranged in sequence along a second axis, and the second axis is perpendicular to the first axis.

6. The dual-wavelength semiconductor laser module according to claim 1, characterized in that: The second laser generating unit includes at least two second laser chips, the second collimating lens group includes at least two second fast axis collimating lenses and at least two second slow axis collimating lenses, and the at least two second laser chips are arranged along the direction of the first axis.

7. The dual-wavelength semiconductor laser module according to claim 6, characterized in that: The second laser module has at least two steering mirrors, one steering mirror corresponds to one second laser chip and is tilted relative to the laser output direction of the second laser chip. At least two steering mirrors are arranged in a direction parallel to the first axis. One steering mirror, one second slow axis collimating lens, one second fast axis collimating lens and one second laser chip are arranged in sequence along the second axis, and the second axis is perpendicular to the first axis.

8. The dual-wavelength semiconductor laser module according to claim 1, characterized in that: The dual-wavelength semiconductor laser module also includes a shell, a focusing lens and an output optical fiber. The first laser module, the second laser module, the dichroic mirror, the focusing lens and part of the output optical fiber are located in the shell. The focusing lens is used to focus the first laser and the second laser. The focused first laser and the second laser are output from the output optical fiber.

9. A dual-wavelength semiconductor laser, characterized in that: The dual-wavelength semiconductor laser comprises a dual-wavelength semiconductor laser module, a heat dissipation module and a housing as described in any one of claims 1 to 8, wherein the heat dissipation module and the dual-wavelength semiconductor laser module are located in the housing, and the heat dissipation module is in contact with the dual-wavelength semiconductor laser module.

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