Cleaning device for crystal growth waste
By designing a cleaning device for crystal growth waste, and cleaning and drying with ultrasonic and heating components, the problem of impurities in crystal growth waste affecting flux recycling is solved, and efficient waste treatment and secondary utilization of flux are achieved.
Patent Information
- Application Number
- CN202421314427.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-11
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-06-11
AI Technical Summary
When preparing crystals in liquid phase, the recycling of flux is affected by impurities in crystal growth waste and needs to be cleaned for subsequent recycling.
A cleaning device for crystal growth waste is designed, including a cleaning chamber, a liquid inlet tube, a processing chamber and a discharge tube, and impurities are washed with an ultrasonic generator, and dried by a heating assembly, and finally the crystal growth waste and liquid are separated by a filter assembly.
It realizes efficient cleaning and drying of crystal growth waste, improves the cleanliness of waste after cleaning, and facilitates subsequent flux recycling.
Smart Images

Figure CN222842699U_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of waste recycling, and in particular to a cleaning device for waste after crystal growth. Background Art
[0002] When a crystal (e.g., silicon carbide crystal) is prepared by a liquid phase method, a flux (e.g., aluminum, silicon-chromium alloy, Li-Si alloy, etc.) is usually added. The flux does not participate in the chemical reaction during the crystal growth process, so the recycling of the flux is of great significance. Before recycling the flux, since the crystal growth waste including the flux is usually exposed to the air and produces impurities (e.g., adsorbed dust, etc.), the crystal growth waste needs to be cleaned. Therefore, it is necessary to provide a cleaning device for crystal growth waste to clean the crystal growth waste and further facilitate the subsequent recycling of the flux. Utility Model Content
[0003] The embodiment of this specification provides a cleaning device for crystal growth waste. The cleaning device includes: a cleaning chamber for containing cleaning liquid and the crystal growth waste; a liquid inlet pipe, one end of which is connected to the cleaning chamber; a processing chamber, a heating component is arranged in the processing chamber; a discharge pipe, one end of which is arranged at the bottom of the cleaning chamber and is connected to the cleaning chamber; the other end of the discharge pipe is connected to the processing chamber; a filter component, a first valve and a second valve are arranged on the discharge pipe, wherein the first valve is arranged on one end of the discharge pipe close to the cleaning chamber; the second valve is located on one end of the discharge pipe close to the processing chamber; the filter component is located between the first valve and the second valve on the discharge pipe, and is used to separate the cleaned crystal growth waste and liquid and the filtered crystal growth waste can enter the processing chamber.
[0004] In some embodiments, an ultrasonic generator is provided on the cleaning chamber.
[0005] In some embodiments, the cleaning device further includes an inert gas storage tank, and the inert gas storage tank is connected to the processing chamber.
[0006] In some embodiments, the process chamber is further provided with a process vacuum pump.
[0007] In some embodiments, the cleaning device further includes a storage chamber connected to the processing chamber, and a third valve is provided on the communication pipeline between the processing chamber and the storage chamber.
[0008] In some embodiments, a storage vacuum pump is provided on the storage chamber.
[0009] In some embodiments, the cleaning device further comprises a crushing assembly.
[0010] In some embodiments, the cleaning device further includes an impurity collection chamber and an impurity collection pipe, wherein the impurity collection pipe connects the cleaning chamber and the impurity collection chamber, and a position of one end of the impurity collection pipe on the cleaning chamber is higher than a position of one end of the exhaust pipe.
[0011] In some embodiments, one end of the impurity collection pipe connected to the cleaning chamber is movably disposed in the cleaning chamber.
[0012] In some embodiments, the impurity collection pipe includes a fixed pipe and a movable hose that are connected to each other, wherein one end of the fixed pipe is connected to the impurity collection chamber, and the other end is located in the cleaning chamber and connected to the movable hose; the cleaning device also includes a robotic arm for controlling the position of the end of the movable hose away from the fixed pipe in the cleaning chamber. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:
[0014] Figure 1 It is a schematic diagram of the structure of an exemplary cleaning device for crystal growth waste according to some embodiments of the present specification.
[0015] In the figure, 100 is a cleaning device, 110 is a cleaning chamber, 111 is an ultrasonic generator, 112 is an impurity collection chamber, 113 is an impurity collection pipe, 1131 is a fixed pipe, 1132 is a movable hose, 120 is a liquid inlet pipe, 130 is a processing chamber, 131 is a heating component, 132 is an exhaust pipe, 133 is a processing exhaust pump, 134 is an exhaust valve, 140 is a discharge pipe, 141 is a filter component, 1411 is a filter screen, 1412 is a filter pipe, 1413 is a liquid collection box, 1414 is a drain pipe, 142 is a first valve, 143 is a second valve, 150 is an inert gas storage tank, 151 is a first pipeline, 160 is a storage chamber, 161 is a connecting pipeline, 162 is a third valve, 163 is a storage exhaust pump, 164 is a second pipeline, 165 is a pressure relief valve, 170 is a robotic arm, and 180 is a box. DETAILED DESCRIPTION
[0016] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of this specification. For ordinary technicians in this field, this specification can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.
[0017] As shown in this specification and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.
[0018] The embodiment of the present specification provides a cleaning device for crystal growth waste, which includes a cleaning chamber, a liquid inlet pipe, a processing chamber and a discharge pipe. Among them, the cleaning chamber is used to contain cleaning liquid and crystal growth waste to clean the crystal growth waste. A heating component is provided in the processing chamber for drying the cleaned crystal growth waste. One end of the liquid inlet pipe is connected to the cleaning chamber, and is used to transport the cleaning liquid and / or crystal growth waste to the cleaning chamber. One end of the discharge pipe is arranged at the bottom of the cleaning chamber and is connected to the cleaning chamber; the other end of the discharge pipe is connected to the processing chamber. A filter component, a first valve and a second valve are provided on the discharge pipe. Among them, the first valve is arranged at one end of the discharge pipe close to the cleaning chamber. The second valve is located at one end of the discharge pipe close to the processing chamber. The filter component is located between the first valve and the second valve on the discharge pipe, and is used to separate the cleaned crystal growth waste and liquid (which can be understood as the cleaning liquid after cleaning the crystal growth waste), and the filtered crystal growth waste can enter the processing chamber for drying. When the first valve and the second valve are both closed, the crystal growth waste is cleaned through the cleaning chamber. After cleaning is completed, the first valve is opened, the second valve is closed, and the cleaned crystal growth waste is filtered through the filter assembly. After filtering is completed, the first valve is kept in an open state, the second valve is opened, and the cleaned crystal growth waste enters the processing chamber. The first valve and the second valve are closed, and the cleaned crystal growth waste is dried through the processing chamber. The cleaning device provided in the embodiment of this specification is not only simple in structure, but also the crystal growth waste after cleaning and drying can facilitate the secondary utilization of subsequent flux.
[0019] Figure 1 It is a schematic diagram of the structure of an exemplary cleaning device for crystal growth waste according to some embodiments of the present specification.
[0020] like Figure 1 As shown, the cleaning device 100 includes a cleaning chamber 110 , a liquid inlet pipe 120 , a processing chamber 130 and a discharge pipe 140 .
[0021] The cleaning chamber 110 is used to contain cleaning liquid and crystal growth waste, and further clean the crystal growth waste. In some embodiments, the cleaning chamber 110 can be cylindrical, rectangular, etc. In some embodiments, the material of the cleaning chamber 110 can be any material that does not react with the crystal growth waste. For example, the material of the cleaning chamber 110 can be stainless steel, etc.
[0022] In some embodiments, the cleaning solution may be water or an aqueous solution with added detergent.
[0023] Crystal growth waste may refer to the material remaining in the crucible after the crystal growth is completed. Since the added flux does not participate in the chemical reaction when the crystal is prepared by the liquid phase method, the crystal growth waste includes the flux. Taking the preparation of silicon carbide crystals by the liquid phase method as an example, when the crucible provides a carbon source, the crucible will be broken after the crystal growth is completed. At this time, the crystal growth waste also includes the crucible piece (or carbon source). In some embodiments, the crystal growth waste can be in block form or in granular form after crushing.
[0024] like Figure 1 As shown, the cleaning chamber 110 is provided with an ultrasonic generator 111. The ultrasonic generator 111 can generate ultrasonic waves to remove impurities on the surface of the crystal growth waste. Using the ultrasonic generator 111 to clean the crystal growth waste can not only save time and improve the cleaning efficiency of the crystal growth waste, but also improve the cleanliness of the crystal growth waste after cleaning. In some embodiments, a stirring component (not shown in the figure) can also be provided in the cleaning chamber 110 to stir the cleaning liquid and the crystal growth waste to fully clean the crystal growth waste.
[0025] like Figure 1 As shown, one end of the liquid inlet pipe 120 is connected to the cleaning chamber 110 for injecting cleaning liquid and / or crystal growth waste into the cleaning chamber 110. In some embodiments, the liquid inlet pipe 120 may be located at the upper part or the side of the cleaning chamber 110.
[0026] like Figure 1As shown, a heating component 131 is provided in the processing chamber 130 for drying the cleaned crystal growth waste. In some embodiments, the processing chamber 130 may be spherical, cylindrical, rectangular, etc. In some embodiments, the material of the processing chamber 130 may be any material that does not react with the crystal growth waste. For example, the material of the processing chamber 130 may be stainless steel, etc. In some embodiments, the heating method of the heating component 131 may include but is not limited to induction heating, resistance heating, etc. In some embodiments, the processing chamber 130 may also be provided with an exhaust pipe 132 and a processing exhaust pump 133, which are used to extract the water vapor generated by the dried cleaned crystal growth waste in the processing chamber 130 out of the processing chamber 130. In some embodiments, an exhaust valve 134 is provided on the exhaust pipe 132.
[0027] like Figure 1 As shown, one end of the discharge pipe 140 is disposed at the bottom of the cleaning chamber 110 and communicated with the cleaning chamber 110 to facilitate the outflow of the cleaned crystal growth waste and liquid (which can be understood as the cleaning liquid after cleaning the crystal growth waste) in the cleaning chamber 110. The other end of the discharge pipe 140 is communicated with the processing chamber 130 to allow the cleaned crystal growth waste in the cleaning chamber 110 to enter the processing chamber 130.
[0028] like Figure 1 As shown, the discharge pipe 140 is provided with a filter assembly 141, a first valve 142 and a second valve 143. The first valve 142 is provided at one end of the discharge pipe 140 close to the cleaning chamber 110, and is used to control the outflow of the crystal growth waste and liquid after cleaning in the cleaning chamber 110. When the first valve 142 is closed, the crystal growth waste and liquid in the cleaning chamber 110 cannot flow out of the cleaning chamber 110 into the discharge pipe 140, or cannot flow out through the discharge pipe 140 into the filter assembly 141.
[0029] The second valve 143 is located at one end of the discharge pipe 140 close to the processing chamber 130 and is used to control the cleaned crystal growth waste and liquid in the cleaning chamber 110 to enter the processing chamber 130 after being filtered by the filter assembly 141.
[0030] The filter assembly 141 is located between the first valve 142 and the second valve 143 on the discharge pipe 140, and is used to separate the cleaned crystal growth waste and the liquid, and the filtered crystal growth waste can enter the processing chamber 130. Figure 1As shown, the filter assembly 141 includes a filter screen 1411, a filter tube 1412 and a liquid collection box 1413. One end of the filter tube 1412 is connected to the discharge pipe 140, and the other end of the filter tube 1412 is connected to the liquid collection box 1413. The filter screen 1411 is located at the connection point between the filter tube 1412 and the discharge pipe 140, and is used to separate the cleaned crystal growth waste and the liquid. The pore size of the filter screen 1411 is smaller than the equivalent diameter of the crystal growth waste. The crystal growth waste cannot pass through the filter screen 1411. The liquid can pass through the filter screen 1411 and enter the liquid collection box 1413 through the filter tube 1412. In some embodiments, as Figure 1 As shown, the filter assembly 141 may further include a drain pipe 1414 for draining the liquid in the liquid collection box 1413 .
[0031] In some embodiments, Figure 1 As shown, the second valve 143 may also be disposed on the discharge pipe 140 near the lower end of the filter screen 1411 to prevent part of the liquid from being retained in the discharge pipe 140 and increasing the drying burden of the processing chamber 130 .
[0032] As an example, when the first valve 142 is opened and the second valve 143 is closed, the cleaned crystal growth waste and liquid are filtered by the filter assembly 141, and the liquid enters the liquid collection box 1413 through the filter screen 1411 and the filter tube 1412. The cleaned crystal growth waste is distributed in the discharge pipe 140 and the cleaning chamber 110. When the liquid level in the liquid collection box 1413 remains unchanged within a preset time period, the first valve 142 is kept in an open state, and the second valve 143 is opened, and the cleaned crystal growth waste enters the processing chamber 130. After there is no cleaned crystal growth waste in the discharge pipe 140 and the cleaning chamber 110, the second valve 143 is closed.
[0033] In some embodiments, Figure 1 As shown, the cleaning device 100 also includes an inert gas storage tank 150, which is connected to the processing chamber 130 through a first pipeline 151. When the cleaned crystal growth waste is dried, the inert gas is filled into the processing chamber 130 to prevent the crystal growth waste from being oxidized and generating impurities during the drying process.
[0034] In some embodiments, Figure 1As shown, the cleaning device 100 also includes a storage chamber 160 connected to the processing chamber 130, which is used to store the crystal growth waste after cleaning and drying. In some embodiments, the storage chamber 160 can be cylindrical, rectangular, etc. In some embodiments, the material of the storage chamber 160 can be any material that does not react with the crystal growth waste. For example, the material of the storage chamber 160 can be stainless steel, etc. The storage chamber 160 is connected to the processing chamber 130 through a connecting pipe 161, and a third valve 162 is provided on the connecting pipe 161, which is used to control the crystal growth waste after cleaning and drying from the processing chamber 130 to enter the storage chamber 160. In some embodiments, the connecting pipe 161 can be arranged at the lower part of the processing chamber 130, and the storage chamber 160 can be arranged below the processing chamber 130 to facilitate the crystal growth waste in the processing chamber 130 to enter the storage chamber 160 under the action of gravity. In some embodiments, as Figure 1 As shown, the storage chamber 160 may also be provided with a storage vacuum pump 163. The storage vacuum pump 163 is connected to the storage chamber 160 through a second pipeline 164, and is used to perform vacuum treatment on the storage chamber 160, for example, to evacuate the storage chamber 160, so as to prevent the crystal growth waste after cleaning and drying from undergoing oxidation reaction and deterioration during storage. In some embodiments, the storage chamber 160 may also be provided with a pressure relief valve 165. When the crystal growth waste is taken from the storage chamber 160, the pressure in the storage chamber 160 may be restored to atmospheric pressure by opening the pressure relief valve 165, so as to ensure the safety of the taking process.
[0035] In some embodiments, the cleaning device 100 may further include a crushing assembly (not shown in the figure) for crushing the crystal growth waste. In some embodiments, the crushing assembly may include but is not limited to a crusher. In some embodiments, the cleaning device 100 may further include a conveying assembly (not shown in the figure) for conveying the crushed crystal growth waste from the crushing assembly to the cleaning chamber 110. In some embodiments, one end of the conveying assembly may be located at the discharge port of the crushing assembly, and the other end may be located at the upper end of the cleaning chamber 110. In some embodiments, the conveying assembly may include but is not limited to a belt conveyor.
[0036] In some embodiments, Figure 1 As shown, the cleaning device 100 further includes an impurity collection chamber 112 and an impurity collection pipe 113. The impurity collection pipe 113 connects the cleaning chamber 110 and the impurity collection chamber 112, and one end of the impurity collection pipe 113 on the cleaning chamber 110 is located higher than the position of one end of the exhaust pipe 140. In some embodiments, the impurity collection chamber 112 may also include a first vacuum pump. During the process of cleaning the crystal growth waste, some impurities such as dust and carbon powder will float on the liquid surface, and these floating impurities can be absorbed into the impurity collection chamber 112 by the first vacuum pump.
[0037] In some embodiments, one end of the impurity collection tube 113 connected to the cleaning chamber 110 is movably disposed in the cleaning chamber 110 to facilitate the collection of impurities at different liquid level heights and / or at the same liquid level height but in different liquid level areas, further improving the cleanliness of crystal growth waste.
[0038] In some embodiments, the impurity collection pipe 113 may include a fixed pipe 1131 and a movable hose 1132 that are connected. One end of the fixed pipe 1131 is connected to the impurity collection chamber 112, and the other end is located in the cleaning chamber 110 and is connected to the movable hose 1132. In some embodiments, the cleaning device 100 may also include a mechanical arm 170 for controlling the position of the end of the movable hose 1132 away from the fixed pipe 1131 (also referred to as the "movable end") in the cleaning chamber 110 (for example, the distance from the liquid surface, etc.). In some embodiments, the mechanical arm 170 may be located on the cleaning chamber 110. In the embodiments of this specification, the length of the movable hose 1132 is sufficient for it to be located at any position in the cleaning chamber 110.
[0039] In some embodiments, the cleaning device 100 may further include a camera (not shown in the figure) and a processor (not shown in the figure). The camera may be located in the cleaning chamber 110, and is used to obtain an image in the cleaning chamber 110 (e.g., the location of the impurities, etc.), and send the image to the processor. The processor may determine the location of the impurities (e.g., the liquid level height of the impurities, the liquid level area of the impurities, etc.) based on the received image, and control the movement of the mechanical arm 170 to place the movable end of the movable hose 1132 at the impurities to facilitate the suction and collection of the impurities.
[0040] In some embodiments, the cleaning device 100 may include a housing 180 for accommodating the various components of the cleaning device 100 (for example, at least one of the cleaning chamber 110, the liquid inlet pipe 120, the processing chamber 130, the exhaust pipe 140, the inert gas storage tank 150, the storage chamber 160 or the robotic arm 170).
[0041] The embodiment of this specification also provides a method for cleaning crystal growth waste. The method includes: closing the first valve 142 and the second valve 143. The collected crystal growth waste is crushed and placed in the cleaning chamber 110. The cleaning liquid is injected into the cleaning chamber 110 through the liquid inlet pipe 120. The ultrasonic generator 111 is started to clean the crystal growth waste with ultrasonic waves. During the cleaning process, floating impurities such as dust and carbon powder are sucked into the impurity collection chamber 112 through the impurity collection pipe 113. After the cleaning is completed, the first valve 142 is opened and the second valve 143 is kept closed. The liquid enters the liquid collection box 1413 through the filter screen 1411 and the filter tube 1412. After the liquid is filtered, the second valve 143 is opened and the first valve 142 is kept open. The cleaned crystal growth waste enters the processing chamber 130 under the action of gravity, and then the second valve 143 is closed. The exhaust valve 134 and the third valve 162 are closed, and the inert gas is filled into the processing chamber 130 through the inert gas storage tank 150. Start the heating component 131 to dry the cleaned crystal growth waste. After a preset time, open the exhaust valve 134, start the processing exhaust pump 133, and exhaust the water vapor in the processing chamber 130. After drying, close the exhaust valve 134. Open the third valve 162, close the pressure relief valve 165, and the dried crystal growth waste enters the storage chamber 160 under the action of gravity. Close the third valve 162, start the storage exhaust pump 163, and evacuate the storage chamber 160. When the crystal growth waste in the storage chamber 160 needs to be taken, open the pressure relief valve 165, and the crystal growth waste can be safely taken.
[0042] It should be noted that the above description of the cleaning device is only for example and illustration, and does not limit the scope of application of the present application. For those skilled in the art, various modifications and changes can be made under the guidance of the present application. However, these modifications and changes are still within the scope of the present application. For example, the cleaning device of the present application can also be applied to clean other waste materials.
[0043] The beneficial effects that may be brought about by the embodiments of the present application include but are not limited to: (1) The cleaning device is not only simple in structure, but also the crystal growth waste after cleaning and drying can be conveniently reused as a subsequent flux; (2) Using an ultrasonic generator to clean the crystal growth waste can not only save time and improve the cleaning efficiency of the crystal growth waste, but also improve the cleanliness of the crystal growth waste after cleaning; (3) When drying the cleaned crystal growth waste, an inert gas can be filled into the processing chamber through an inert gas storage tank to prevent the crystal growth waste from oxidizing and generating impurities during the drying process; (4) The storage vacuum pump can be used to evacuate the storage chamber, for example, to evacuate, to prevent the cleaned and dried crystal growth waste from oxidizing and deteriorating during the storage process; (5) One end of the impurity collection pipe connected to the cleaning chamber can be movably arranged in the cleaning chamber, which can facilitate the collection of impurities at different liquid level heights and / or at the same liquid level but in different liquid level areas, thereby further improving the cleanliness of the crystal growth waste. It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.
[0044] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, as an example and not a limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.
Claims
1. A cleaning device for crystal growth waste, characterized in that: The cleaning device comprises: A cleaning chamber (110) for containing a cleaning liquid and the crystal growth waste; a liquid inlet pipe (120), one end of the liquid inlet pipe (120) being in communication with the cleaning chamber (110); A processing chamber (130), wherein a heating component is provided in the processing chamber (130); a discharge pipe (140), one end of which is disposed at the bottom of the cleaning chamber (110) and communicated with the cleaning chamber (110); the other end of which is communicated with the processing chamber (130); a filter assembly (141), a first valve (142) and a second valve (143) are disposed on the discharge pipe (140), wherein: The first valve (142) is disposed on one end of the discharge pipe (140) close to the cleaning chamber (110); The second valve (143) is located on one end of the discharge pipe (140) close to the processing chamber (130); The filter assembly (141) is located between the first valve (142) and the second valve (143) on the discharge pipe (140) and is used to separate the cleaned crystal growth waste and liquid so that the filtered crystal growth waste can enter the processing chamber (130).
2. The cleaning device according to claim 1, characterized in that: The cleaning chamber (110) is provided with an ultrasonic generator (111).
3. The cleaning device according to claim 1, characterized in that: The cleaning device (100) further comprises an inert gas storage tank (150), wherein the inert gas storage tank (150) is connected to the processing chamber (130).
4. The cleaning device according to claim 1, characterized in that: The processing chamber (130) is also provided with a processing vacuum pump (133).
5. The cleaning device according to claim 1, characterized in that: The cleaning device (100) further comprises a storage chamber (160) connected to the processing chamber (130), and a third valve (162) is provided on the communication pipeline (161) between the processing chamber (130) and the storage chamber (160).
6. The cleaning device according to claim 5, characterized in that: The storage chamber (160) is provided with a storage air extraction pump (163).
7. The cleaning device according to claim 1, characterized in that: The cleaning device (100) further comprises a crushing component.
8. The cleaning device according to claim 1, characterized in that: The cleaning device (100) further comprises an impurity collection chamber (112) and an impurity collection pipe (113), wherein the impurity collection pipe (113) connects the cleaning chamber (110) and the impurity collection chamber (112), and the position of one end of the impurity collection pipe (113) on the cleaning chamber (110) is higher than the position of one end of the discharge pipe (140).
9. The cleaning device according to claim 8, characterized in that: One end of the impurity collecting pipe (113) communicating with the cleaning chamber (110) is movably disposed in the cleaning chamber (110).
10. The cleaning device according to claim 8, characterized in that: The impurity collecting pipe (113) comprises a fixed pipe (1131) and a movable hose (1132) which are connected to each other, wherein: One end of the fixed tube (1131) is connected to the impurity collection chamber (112), and the other end is located in the cleaning chamber (110) and is connected to the movable hose (1132); The cleaning device (100) further comprises a mechanical arm (170) for controlling the position of an end of the movable hose (1132) away from the fixed tube (1131) within the cleaning chamber (110).