Structure of optical coupling three-terminal bidirectional AC switching device with current-limiting resistor
By integrating the resistor layer into the semiconductor structure of the optically coupled three-terminal bidirectional AC switching device, the problem of large space occupation and high cost caused by the external current limiting resistance design is solved, and the device has its own current limiting protection function is realized, which improves the system's integration and application.
Patent Information
- Application Number
- CN202421759857.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-24
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-07-24
AI Technical Summary
When the existing optically coupled three-terminal bidirectional AC switching devices improve the miniaturization and integration of the system, the design of external current limiting resistors leads to large space consumption, complex bracket design, high manufacturing costs, and if the current limiting resistor is not used, it will cause potential damage to the device.
The resistor layer is directly integrated into the semiconductor structure of the optically coupled three-terminal bidirectional AC switching device, and in particular, a resistor layer is formed on the gate layer to achieve the current limit protection function without the need for an external current limit resistor.
The optically coupled three-terminal bidirectional AC switching device has its own current finite resistor, avoiding damage caused by excessive current, reducing the space occupation and cost of the system, and improving the integration and application of the overall system.
Smart Images
Figure CN222852571U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of AC switches, in particular to a structure of an optically coupled three-terminal bidirectional AC switch device with a current-limiting resistor. Background Art
[0002] Photo TRIAC (Photo Triode for Alternating Current) is a switching device that combines an optocoupler and a TRIAC device. An optocoupler is an electronic component that uses light to electrically isolate two circuits. A TRIAC is generally a three-terminal semiconductor device that can be used to control the flow of alternating current.
[0003] The working principle of Photo TRIAC is generally to receive a tiny current signal from the input end through an optical coupler and convert it into a light signal. The light signal is then transmitted to the photosensitive gate of the TRIAC, thereby turning on the TRIAC switch and allowing AC current to flow through the output end.
[0004] One of the main advantages of Photo TRIAC is that it can provide electrical isolation. Through such electrical isolation, direct electrical connection between the input and output ends can be avoided to prevent damage caused by noise and excessive electrical signals. Photo TRIAC also has the advantages of smaller size, low power consumption and high reliability.
[0005] In order to make the Photo TRIAC operate normally, a current limiting resistor is generally set in the basic trigger circuit of the Photo TRIAC to prevent the Photo TRIAC from being damaged due to excessive current passing through.
[0006] Please refer to Figure 1 In the prior art, the basic trigger circuit of the known photo-coupled three-terminal bidirectional alternating current switch device (Photo TRIAC) 80 uses the following Figure 1 In order to prevent the aforementioned Photo TRIAC 80 from being damaged by excessive current, it is conventional to set a current limiting resistor 90 at the pin of the Photo TRIAC 80 (such as Figure 1In the trigger circuit connected to the pin 6 of the PhotoTRIAC 80 in the circuit, the current limiting resistor 90 is designed outside the PhotoTRIAC 80, thereby achieving the function of protecting the PhotoTRIAC 80. However, as mentioned above, with the requirements of miniaturization and improved integration of the overall system, the design of arranging the current limiting resistor 90 outside the PhotoTRIAC 80 may cause problems such as large space occupation, complex design of surrounding brackets, and increased manufacturing costs in different application scenarios, thereby limiting the application of the PhotoTRIAC 80. If the current limiting resistor 90 is not used, the PhotoTRIAC 80 will be potentially damaged. Utility Model Content
[0007] The utility model aims to provide a structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor to solve the problems in the prior art.
[0008] To achieve the above-mentioned purpose, the utility model provides the following technical solution: a structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor, comprising:
[0009] Optically coupled three-terminal bidirectional alternating current switch device semiconductor structure;
[0010] The resistance layer is formed in the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device.
[0011] Preferably, the resistance layer is formed on a gate layer of the semiconductor structure of the optically coupled triac.
[0012] Preferably, it also includes:
[0013] substrate;
[0014] an oxide layer formed on the substrate;
[0015] A P-type semiconductor layer is formed on the substrate;
[0016] An N-type semiconductor layer formed in the P-type semiconductor layer;
[0017] An isolation layer formed between the adjacent N-type semiconductor layer and the gate layer;
[0018] A metal connection layer is formed on the isolation layer and electrically connects regions of the same electrical property;
[0019] Wherein, the gate layer is formed on the N-type semiconductor layer;
[0020] Wherein, the resistance layer is formed on the gate layer.
[0021] Preferably, the P-type semiconductor layer includes a well region, a body region and a contact region;
[0022] The N-type semiconductor layer includes a first N-type semiconductor region, a second N-type semiconductor region, a third N-type semiconductor region and a fourth N-type semiconductor region;
[0023] The first N-type semiconductor region, the second N-type semiconductor region, and the third N-type semiconductor region are formed in the well region, and the fourth N-type semiconductor region is formed in the body region;
[0024] The gate layer is formed between the first N-type semiconductor region and the second N-type semiconductor region, and partially covers the first N-type semiconductor region and the second N-type semiconductor region;
[0025] The isolation layer is formed to cover the first N-type semiconductor region, the second N-type semiconductor region and the gate layer, and is formed to cover the first N-type semiconductor region, the second N-type semiconductor region, the third N-type semiconductor region and a portion of the fourth N-type semiconductor region.
[0026] Preferably, the resistance layer is formed on an isolation layer of the semiconductor structure of the optically coupled triac.
[0027] Preferably, it also includes:
[0028] substrate;
[0029] an oxide layer formed on the substrate;
[0030] A P-type semiconductor layer is formed on the substrate;
[0031] An N-type semiconductor layer formed in the P-type semiconductor layer;
[0032] A gate layer formed on the N-type semiconductor layer;
[0033] A metal connection layer, at least a portion of which is formed on the resistance layer and electrically connects regions of the same electrical property;
[0034] Wherein, at least a portion of the isolation layer is formed in the first end point region and the second end point region;
[0035] The resistance layer is formed on the isolation layer formed in the first terminal region and the second terminal region.
[0036] Preferably, it also includes:
[0037] substrate;
[0038] an oxide layer formed on the substrate;
[0039] A P-type semiconductor layer is formed on the substrate;
[0040] An N-type semiconductor layer formed in the P-type semiconductor layer;
[0041] A metal connection layer, at least a portion of which is formed on the resistance layer and electrically connects regions of the same electrical property;
[0042] Wherein, at least a portion of the isolation layer is formed in the first end point region and the second end point region;
[0043] The resistance layer is formed on the isolation layer formed in the first terminal region and the second terminal region.
[0044] Preferably, the resistance layer is formed in the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device in an implantation manner.
[0045] Preferably, it also includes:
[0046] substrate;
[0047] an oxide layer formed on the substrate;
[0048] A P-type semiconductor layer is formed on the substrate;
[0049] An N-type semiconductor layer formed in the P-type semiconductor layer;
[0050] an isolation layer, at least a portion of which is formed in the first end point region and the second end point region, wherein the resistance layer is formed in the first end point region and the second end point region;
[0051] The metal connection layer, at least a portion of which is formed on the resistance layer, electrically connects regions with the same electrical properties.
[0052] Preferably, it also includes:
[0053] A well region of a P-type semiconductor layer;
[0054] A low-concentration N-type semiconductor region is formed in the well region of the P-type semiconductor layer.
[0055] Compared with the prior art, the utility model has the following beneficial effects: the optically coupled three-terminal bidirectional AC switch device can be directly provided with a current limiting resistor to produce its protection function of avoiding damage caused by excessive current, etc., and there is no need to additionally set a current limiting resistor in the trigger circuit of the optically coupled three-terminal bidirectional AC switch device. At the same time, the characteristics and functions of the current limiting resistor can be maintained, thereby achieving many beneficial effects such as improving the overall system integration, saving space, reducing costs, and improving applicability. BRIEF DESCRIPTION OF THE DRAWINGS
[0056] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:
[0057] Figure 1 It is a schematic diagram of the configuration of a basic trigger circuit of an optically coupled three-terminal bidirectional AC switch device in the prior art;
[0058] Figure 2 It is a schematic diagram of the configuration of the trigger circuit of the optically coupled three-terminal bidirectional AC switch device of the utility model with an equivalent current limiting resistor;
[0059] Figure 3 A flow chart for manufacturing an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor for the utility model;
[0060] Figure 4 It is a schematic diagram of the configuration of the semiconductor structure of the optically coupled three-terminal bidirectional AC switch device of the utility model;
[0061] Figure 5 It is a schematic diagram of the configuration of the semiconductor structure of the first optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor of the utility model;
[0062] Figure 6 It is a schematic diagram of the configuration of the semiconductor structure of the second optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor of the utility model;
[0063] Figure 7 It is a schematic diagram of the configuration of the semiconductor structure of the third optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor of the utility model;
[0064] Figure 8 It is a schematic diagram of the configuration of the semiconductor structure of the fourth optically coupled three-terminal bidirectional alternating current switch device of the utility model;
[0065] Fig. 9 It is a schematic diagram of the configuration of the semiconductor structure of the fifth optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor of the utility model;
[0066] Fig.10 It is a schematic diagram of the configuration of the semiconductor structure of the sixth optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor of the utility model;
[0067] Fig.11 The utility model is a schematic diagram of an equivalent circuit of a semiconductor structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor.
[0068] In the figure: 10, optically coupled three-terminal bidirectional AC switch device; 20, current limiting resistor; 80, conventional optically coupled three-terminal bidirectional AC switch device; 90, current limiting resistor 1; 100, semiconductor structure of optically coupled three-terminal bidirectional AC switch device; 110, substrate; 120, P-type semiconductor layer; 130, N-type semiconductor layer; 131, first N-type semiconductor region; 132, second N-type semiconductor region; 133, third N-type semiconductor region; 134, fourth N-type semiconductor region; 140, gate layer; 145, isolation layer; 150, resistor layer; 160, metal connection layer; 2 00. A semiconductor structure of a first optically coupled three-terminal bidirectional AC switch device having a current limiting resistor; 300. A semiconductor structure of a second optically coupled three-terminal bidirectional AC switch device having a current limiting resistor; 400. A semiconductor structure of a third optically coupled three-terminal bidirectional AC switch device having a current limiting resistor; 500. A semiconductor structure of a fourth optically coupled three-terminal bidirectional AC switch device having a current limiting resistor; 600. A semiconductor structure of a fifth optically coupled three-terminal bidirectional AC switch device having a current limiting resistor; 700. A semiconductor structure of a sixth optically coupled three-terminal bidirectional AC switch device having a current limiting resistor. DETAILED DESCRIPTION
[0069] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model. Therefore, the following detailed description of the embodiments of the utility model provided in the drawings is not intended to limit the scope of the utility model for which protection is claimed, but merely represents selected embodiments of the utility model.
[0070] Please refer to Figure 2 The structure of the optically coupled triac device 10 with the current limiting resistor 20 and the manufacturing method thereof can directly integrate the semiconductor structure with equivalent resistance into the original optically coupled triac device 10 by means of semiconductor process, and the position of the semiconductor structure in the basic trigger circuit of the overall optically coupled triac device 10 is equivalent to Figure 2As shown in the figure, by setting the current limiting resistor 20 in the optically coupled three-terminal bidirectional AC switch device 10 in a semiconductor process manner and structure, the flexibility of use of the optically coupled three-terminal bidirectional AC switch device 10 integrated with the current limiting resistor 20 can be increased, while taking into account the effectiveness of protecting the optically coupled three-terminal bidirectional AC switch device 10. The method and specific structure of equivalently integrating the current limiting resistor 20 into the optically coupled three-terminal bidirectional AC switch device 10 in the embodiments of the new invention will be described later. Among them, the remaining external trigger circuits and operating conditions of the optically coupled three-terminal bidirectional AC switch device 10 with the current limiting resistor 20 disclosed in the new invention are similar to those of the conventional Figure 1 Compared with the basic trigger circuit, except for the different locations of the current limiting resistor 20 and the current limiting resistor 90, there is no substantial difference in other parts, which will not be elaborated here.
[0071] Please refer to Figure 3 One aspect of the present invention provides a method for manufacturing an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor, comprising: step (S100) of providing a semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device; and step (S200) of providing a resistor layer in the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device. The semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device includes a gate layer, and the resistor layer is formed to cover the gate layer of the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device, and the resistor layer contacts the gate layer. The optically coupled three-terminal bidirectional alternating current switch device, for example, has an NPN transistor, and the resistor layer is formed to cover the gate layer of the NPN transistor. In one embodiment, the resistor layer can directly contact the gate layer. The resistor layer can be a material that has electrical resistance properties, such as Poly silicon or other materials with resistance properties, so as to form an appropriate resistor above the gate layer.
[0072] Thus, by directly providing a resistance layer with resistance properties in the semiconductor structure of the optically coupled three-terminal bidirectional AC switch device, it can be used as a current limiting protection for the optically coupled three-terminal bidirectional AC switch device without connecting a current limiting resistor outside the optically coupled three-terminal bidirectional AC switch device.
[0073] In one embodiment, the step (S100) of providing a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device further includes: providing a substrate, such as an n-substrate; forming an oxide layer on the substrate; forming a P-type semiconductor layer on the substrate; forming an N-type semiconductor layer in the P-type semiconductor layer to constitute a main component region; forming a gate layer on the N-type semiconductor layer, wherein the gate layer may be an oxide material; forming an isolation layer between adjacent N-type semiconductor layers and gate layers; forming a metal connection layer to electrically connect regions of the same electrical property. And wherein, the step (S200) of providing a resistor layer on the semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device further includes: forming a resistor layer on the gate layer to provide a resistor of appropriate resistance value for current limiting protection. Among them, the order of the manufacturing method of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in one embodiment of the present invention can be performed according to the above order, but is not limited thereto. Any manufacturing method that can manufacture a similar structure and provide resistance characteristics belongs to a variation of the present invention. In one embodiment, the resistor layer is a polysilicon material with a low doping concentration and a resistance value, and the gate layer is a polysilicon material with a high doping concentration. In one embodiment, the isolation layer is a borophosphosilicate glass material.
[0074] In one embodiment, the aforementioned P-type semiconductor layer includes a well region, a body region and a contact region; the N-type semiconductor layer includes a first N-type semiconductor region, a second N-type semiconductor region, a third N-type semiconductor region and a fourth N-type semiconductor region; wherein the first N-type semiconductor region, the second N-type semiconductor region and the third N-type semiconductor region are formed in the well region, and the fourth N-type semiconductor region is formed in the body region; the gate layer is formed between the first N-type semiconductor region and the second N-type semiconductor region, and partially covers the first N-type semiconductor region and the second N-type semiconductor region; the isolation layer is formed to cover the first N-type semiconductor region and the second N-type semiconductor region and the adjacent portion of the gate layer, and is formed to cover the first N-type semiconductor region, the second N-type semiconductor region, the third N-type semiconductor region and the fourth N-type semiconductor region. The structure of the optically coupled three-terminal bidirectional AC switch device with a current limiting resistor in another aspect of the present invention will be used for specific description.
[0075] Figure 4 A schematic diagram showing the configuration of the semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device in an embodiment of the present invention, and taking a metal-gate zero-trigger (ZC) Photo TRIAC as an example; Figure 5 A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in an embodiment of the present invention, and taking a Poly-gate Photo TRIAC (ZC) as an example; Figure 6A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in an embodiment of the present invention, and taking a Photo TRIAC (ZC) with a Poly resistor as an example; Figure 7 A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in an embodiment of the present invention, and taking a Photo TRIAC (ZC) with an implant resistor as an example; Figure 8 A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device in an embodiment of the present invention, and taking a random phase triggered (RP) Photo TRIAC as an example; Fig. 9 A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in an embodiment of the present invention, and taking a Photo TRIAC (RP) with a Poly resistor as an example; Fig.10 A schematic diagram showing the configuration of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in an embodiment of the present invention, and taking a Photo TRIAC (RP) with an implant resistor as an example; Fig.11 A schematic diagram showing an equivalent circuit of a semiconductor structure of an optically coupled three-terminal bidirectional alternating current switch device with a current limiting resistor in one embodiment of the present invention.
[0076] Please refer to Figure 4 , showing a semiconductor structure 100 of an optically coupled three-terminal bidirectional AC switch device without a current limiting resistor, which includes a substrate 110, such as an n-substrate (represented by n-Sub in the figure), and an oxide layer formed on the substrate. A P-type semiconductor layer 120 is formed on the substrate 110, and the P-type semiconductor layer 120 may include a well region PW, a body region PB and a contact region PR, which are distributed as shown in FIG. Figure 4 As shown. An N-type semiconductor layer 130 (indicated by N+ in the figure, and N+ indicates high concentration) is formed in the P-type semiconductor layer 120 to constitute the main element region. The N-type semiconductor layer 130 can be divided into a first N-type semiconductor region 131, a second N-type semiconductor region 132, a third N-type semiconductor region 133, and a fourth N-type semiconductor region 134. The first N-type semiconductor region 131, the second N-type semiconductor region 132, and the third N-type semiconductor region 133 are formed in the well region PW, and the fourth N-type semiconductor region 134 is formed in the body region PB. A gate layer 140 is formed on the N-type semiconductor layer 130. The gate layer 140 is formed between the first N-type semiconductor region 131 and the second N-type semiconductor region 132, and partially covers the first N-type semiconductor region 131 and the second N-type semiconductor region 132. The gate layer 140 is an oxide layer. However, it should be noted that the gate layer 140 is used for the convenience of explaining its main function. However, its oxide material also covers the layers formed on the Figure 4The regions shown are, for example, the body regions PB, the third N-type semiconductor region 133 and the fourth N-type semiconductor region 134, and the thick oxide Fox formed between the two central NPN transistors. The metal connection layer 160 is formed on the gate layer 140 and partially covers the gate layer 140 to electrically connect the same electrical regions. The material of the metal connection layer 160 is, for example, aluminum (such as Figure 4 , Figure 5 AL in Figure 1). T1 and T2 are terminals that can be connected to the outside. Figure 4 The semiconductor structure shown can realize a semiconductor structure 100 of an optically coupled triac device.
[0077] Please refer to Figure 5 , showing the semiconductor structure 200 of the first optically coupled three-terminal bidirectional AC switch device with a current limiting resistor in one embodiment of the present invention, and taking a zero-point triggered optically coupled three-terminal bidirectional AC switch device as an example, the resistor is formed in a Poly Gate manner, and it can be manufactured by the aforementioned manufacturing method of the optically coupled three-terminal bidirectional AC switch device with a current limiting resistor. The semiconductor structure 200 of the optically coupled three-terminal bidirectional AC switch device also includes a substrate 110, such as an n-substrate (represented by n-Sub in the figure), and an oxide layer formed on the substrate. A P-type semiconductor layer 120 is formed on the substrate 110. In one embodiment, the P-type semiconductor layer 120 may include a well region PW, a body region PB, and a contact region PR, which are distributed as shown in FIG. Figure 5As shown. The N-type semiconductor layer 130 (indicated by N+ in the figure, and N+ indicates high concentration) is formed in the P-type semiconductor layer 120 to constitute the main device area. In one embodiment, the N-type semiconductor layer 130 can be divided into a first N-type semiconductor region 131, a second N-type semiconductor region 132, a third N-type semiconductor region 133, and a fourth N-type semiconductor region 134, and they are different regions. Among them, the first N-type semiconductor region 131, the second N-type semiconductor region 132, and the third N-type semiconductor region 133 are formed in the well region PW, and the fourth N-type semiconductor region 134 is formed in the body region PB. The gate layer 140 is formed on the N-type semiconductor layer 130. In one embodiment, the gate layer 140 is formed between the first N-type semiconductor region 131 and the second N-type semiconductor region 132, and covers the first N-type semiconductor region 131 and the second N-type semiconductor region 132. Part of the gate layer 140 is an oxide material. The resistor layer 150 is formed to cover the gate layer 140. In one embodiment, the resistor layer 150 is formed by forming a material with an appropriate resistance value on the gate layer 140, wherein the resistor layer is a polysilicon material (Poly) with a low doping concentration and a resistance value, so as to provide a resistance characteristic with a resistance value above the gate layer and serve as a current limiting protection. The isolation layer 145 is formed between the adjacent N-type semiconductor layer 130 and the gate layer 140, and is particularly formed to cover the first N-type semiconductor region 131 and the second N-type semiconductor region 132 and the gate layer 140 and the resistor layer 150 thereon to serve as isolation between the electrode regions, and is formed to cover the first N-type semiconductor region 131, the second N-type semiconductor region 132, the third N-type semiconductor region 133 and the fourth N-type semiconductor region 134. Figure 5 In one embodiment, the isolation layer 145 is a borophosphosilicate glass material. In addition, the oxide material of the isolation layer 145 also covers the Figure 5 Other regions shown, such as the body regions PB and the thick oxide Fox formed between the two central groups of NPN transistors. A metal connection layer 160 is formed on the gate layer 140 and the resistor layer 150 thereon, and covers and connects to each electrical region so that the same electrical regions can be electrically connected to each other. Among them, the metal connection layer 160 on the gate layer 140 and the resistor layer 150 thereon is connected to the metal connection layer 160 on the third N-type semiconductor region 133, and among them, the metal connection layer 160 of the second N-type semiconductor region 132 is connected to the metal connection layer 160 of the fourth N-type semiconductor region 134 and connected to the T1 terminal.
[0078] In other embodiments, for example Figure 6 and Figure 7 As shown, Figure 6A schematic diagram showing a semiconductor structure 300 of a zero-crossing optically coupled three-terminal bidirectional alternating current switch device using a Poly resistor as a current-limiting resistor in an embodiment of the present invention; and Figure 7 A schematic diagram showing the semiconductor structure of an optically coupled three-terminal bidirectional AC switch device with zero-point trigger (ZC) using implant resistors as current limiting resistors in an embodiment of the present invention. Figure 6 and Figure 7 In the above Figure 4 , Figure 5 The same reference numerals or abbreviations refer to the same elements, materials, etc., and will not be described again herein.
[0079] In one embodiment, Figure 6 The resistance layer 150 is formed on the isolation layer 145 or the oxide layer in the form of a Poly Resist, and is connected to the Poly Resist and other doped electrical regions and to the terminals (such as T1 and T2) connected to the outside by a metal connection layer 160. By using different doping levels, for example, the Poly material can be used as a resistor at a low doping concentration, for example Figure 6 The electrical areas of the first and second terminal areas of the left and right regions, and the externally connected terminals T1 and T2, are used as the resistance of the semiconductor structure itself by setting the resistance layer 150 between the conductive metal connection layers 160. It should be noted that the Poly Resistivity can be set anywhere on the layout as long as it can achieve similar functions electrically, and it is not limited to being set at Figure 6 The electrical regions of the first end region and the second end region are limited thereto.
[0080] In one embodiment, Figure 7 The resistance layer 150 is formed on the substrate 110 or the oxide layer by implantation resistance. Specifically, the resistance layer 150 is formed by forming a well region PW of a P-type semiconductor layer therein, and a low-concentration N-type semiconductor region (as shown by N-) is formed in the well region PW of the P-type semiconductor layer by implantation, and used as a resistor, so as to Figure 7 The electrical areas of the first and second terminal areas of the left and right regions, and the externally connected terminals T1 and T2, are used as the resistance of the semiconductor structure itself by setting the resistance layer 150 between the conductive metal connection layers 160. It should be noted that the Poly Resistivity can be set anywhere on the layout as long as it can achieve similar functions electrically, and it is not limited to being set at Figure 7The electrical regions of the first end region and the second end region are limited thereto.
[0081] In other embodiments, for example Fig. 9 and Fig.10 As shown, Fig. 9 A schematic diagram showing a semiconductor structure 600 of a random phase triggered (RP, RANDOM-PHASE) optically coupled three-terminal bidirectional AC switch device using a Poly resistor as a current limiting resistor in an embodiment of the present invention; and Fig.10 A schematic diagram showing the semiconductor structure of a randomly phase triggered (RP) optically coupled three-terminal bidirectional AC switch device 700 using implant resistors as current limiting resistors in an embodiment of the present invention, Figure 8 The structure diagram of a random phase triggered (RP) optically coupled triac device 500 without a current limiting resistor is shown as a comparison. Figures 8 to 10 In the above Figure 4 , Figure 5 The same reference numerals or abbreviations refer to the same elements, materials, etc., and will not be described again herein.
[0082] In one embodiment, Fig. 9 The resistance layer 150 is formed on the isolation layer 145 or the oxide layer in the form of a Poly Resist, and is connected to the Poly Resist and other doped electrical regions and to the terminals (such as T1 and T2) connected to the outside by a metal connection layer 160. By using different doping levels, for example, the Poly material can be used as a resistor at a low doping concentration, for example Fig. 9 The electrical areas of the first and second terminal areas of the left and right regions, and the externally connected terminals T1 and T2, are used as the resistance of the semiconductor structure itself by setting the resistance layer 150 between the conductive metal connection layers 160. It should be noted that the Poly Resistivity can be set anywhere on the layout as long as it can achieve similar functions electrically, and it is not limited to being set at Fig. 9 The electrical regions of the first end region and the second end region are limited thereto.
[0083] In one embodiment, Fig.10 The resistance layer 150 is formed on the substrate 110 or the oxide layer by implantation resistance. Specifically, the resistance layer 150 is formed by forming a well region PW of a P-type semiconductor layer therein, and a low-concentration N-type semiconductor region (as shown by N-) is formed in the well region PW of the P-type semiconductor layer by implantation, and used as a resistor, so as to Figure 7The electrical areas of the first and second terminal areas of the left and right regions, and the externally connected terminals T1 and T2, are used as the resistance of the semiconductor structure itself by setting the resistance layer 150 between the conductive metal connection layers 160. It should be noted that the Poly Resistivity can be set anywhere on the layout as long as it can achieve similar functions electrically, and it is not limited to being set at Fig.10 The electrical regions of the first end region and the second end region are limited thereto.
[0084] Please refer to Figures 5 to 10 and Fig.11 For example, Figure 5 The left half of the semiconductor structure 200 of the optically coupled three-terminal bidirectional AC switch device with a current limiting resistor is exemplarily described. As a corresponding example, Figure 5 The semiconductor structure 200 of the optically coupled three-terminal bidirectional AC switch device with a current limiting resistor shown in FIG. 1 includes two sets of NPN transistors on the left and right, and can be connected to the T1 terminal and the T2 terminal respectively by the metal connection layer 160, which is equivalent to Fig.11 In addition, the configuration of the through-resistance layer 150 and its related semiconductor structure is equivalent to Figure 7 The equivalent current limiting resistor R shown in Fig.11 The circuit element markings of the NPN transistor in FIG. 6 are equivalent to the NPN transistor semiconductor structure shown in FIG. 6 .
[0085] Thus, through Figure 5 , Figure 6 , Figure 7 and Fig. 9 , Fig.10 The semiconductor structure shown can form a semiconductor structure 200 of an optically coupled triac device having a current limiting resistor, thereby achieving the effect of integrating the current limiting resistor directly into the optically coupled triac device itself by means of a semiconductor process.
[0086] In summary, through the manufacturing method and specific structure of the present invention, which provides a resistance layer in the semiconductor structure of the optically coupled triac device, as well as the setting of the resistance layer and the structural configuration between the resistance layer and the surrounding layers, such as the configuration of the regions of the P-type semiconductor layer and the N-type semiconductor regions and the relative relationship between the gate layer, the resistance layer and the isolation layer, the structure of the optically coupled triac device can be directly integrated with a current limiting resistor to have a protection function to avoid damage caused by factors such as excessive current, and there is no need to set up an additional current limiting resistor in the trigger circuit of the optically coupled triac device, while maintaining the characteristics and functions of the current limiting resistor, thereby achieving many benefits such as improving the overall system integration, saving space, reducing costs, and improving applicability. In addition, through the semiconductor process, without the need for additional external configuration, the optically coupled triac device with a current limiting resistor can be completed while manufacturing the optically coupled triac device.
[0087] Finally, it should be noted that the above description is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor, characterized in that: include: Optically coupled three-terminal bidirectional alternating current switch device semiconductor structure; The resistance layer is formed in the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device.
2. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 1, characterized in that: The resistance layer is formed on the gate layer of the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device.
3. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 2, characterized in that: Also includes: substrate; an oxide layer formed on the substrate; A P-type semiconductor layer is formed on the substrate; An N-type semiconductor layer formed in the P-type semiconductor layer; An isolation layer formed between the adjacent N-type semiconductor layer and the gate layer; A metal connection layer is formed on the isolation layer and electrically connects regions of the same electrical property; Wherein, the gate layer is formed on the N-type semiconductor layer; Wherein, the resistance layer is formed on the gate layer.
4. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 3, characterized in that: The P-type semiconductor layer includes a well region, a body region and a contact region; The N-type semiconductor layer includes a first N-type semiconductor region, a second N-type semiconductor region, a third N-type semiconductor region and a fourth N-type semiconductor region; The first N-type semiconductor region, the second N-type semiconductor region, and the third N-type semiconductor region are formed in the well region, and the fourth N-type semiconductor region is formed in the body region; The gate layer is formed between the first N-type semiconductor region and the second N-type semiconductor region, and partially covers the first N-type semiconductor region and the second N-type semiconductor region; The isolation layer is formed to cover the first N-type semiconductor region, the second N-type semiconductor region and the gate layer, and is formed to cover the first N-type semiconductor region, the second N-type semiconductor region, the third N-type semiconductor region and a portion of the fourth N-type semiconductor region.
5. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 1, characterized in that: The resistance layer is formed on the isolation layer of the semiconductor structure of the optically coupled triac.
6. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 5, characterized in that: Also includes: substrate; an oxide layer formed on the substrate; A P-type semiconductor layer is formed on the substrate; An N-type semiconductor layer formed in the P-type semiconductor layer; A gate layer formed on the N-type semiconductor layer; A metal connection layer, at least a portion of which is formed on the resistance layer and electrically connects regions of the same electrical property; Wherein, at least a portion of the isolation layer is formed in the first end point region and the second end point region; The resistance layer is formed on the isolation layer formed in the first terminal region and the second terminal region.
7. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 5, characterized in that: Also includes: substrate; an oxide layer formed on the substrate; A P-type semiconductor layer is formed on the substrate; An N-type semiconductor layer formed in the P-type semiconductor layer; A metal connection layer, at least a portion of which is formed on the resistance layer and electrically connects regions of the same electrical property; Wherein, at least a portion of the isolation layer is formed in the first end point region and the second end point region; The resistance layer is formed on the isolation layer formed in the first terminal region and the second terminal region.
8. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 1, characterized in that: The resistance layer is formed in the semiconductor structure of the optically coupled three-terminal bidirectional alternating current switch device in an implantation manner.
9. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 1, characterized in that: Also includes: substrate; an oxide layer formed on the substrate; A P-type semiconductor layer is formed on the substrate; An N-type semiconductor layer formed in the P-type semiconductor layer; an isolation layer, at least a portion of which is formed in the first end point region and the second end point region, wherein the resistance layer is formed in the first end point region and the second end point region; The metal connection layer, at least a portion of which is formed on the resistance layer, electrically connects regions with the same electrical properties.
10. The structure of an optically coupled three-terminal bidirectional AC switch device with a current limiting resistor according to claim 1, characterized in that: Also includes: A well region of a P-type semiconductor layer; A low-concentration N-type semiconductor region is formed in the well region of the P-type semiconductor layer.