Transmission chamber pressure control device and thin film deposition equipment

Abstract

The utility model discloses a transmission chamber pressure control device and thin film deposition equipment, the transmission chamber pressure control device comprises a transmission chamber, an inflation gas circuit and an exhaust gas circuit, the inflation gas circuit is connected with the transmission chamber, the inflation gas circuit is used for inflating gas into the transmission chamber; the air exhaust air channel comprises a vacuum pump and an air exhaust speed adjusting part, the air exhaust speed adjusting part is connected between the vacuum pump and the transmission cavity, and the vacuum pump is used for exhausting air from the transmission cavity; and the pumping speed adjusting piece is configured to manually change the conductance of the pumping speed adjusting piece so as to indirectly adjust the pumping speed of the vacuum pump. The flow conductance of the pumping speed adjusting part is manually changed, namely, the resistance of gas transmission is changed, so that even if the pumping speed is not changed, the actual pumping rate of the vacuum pump can be increased or decreased, the effective pumping speed of the vacuum pump is indirectly adjusted, the effective pumping speed is closer to the required target pumping speed, flow field disturbance is avoided, and the wafer yield is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a transmission chamber pressure control device and a thin film deposition device. Background Art

[0002] In the field of semiconductor manufacturing, especially in the wafer processing process, the transfer chamber is an important link connecting various reaction chambers, and the cleanliness of its internal environment has a decisive influence on product quality. In order to prevent the residual active gas or impurities in the reaction chamber from diffusing into the transfer chamber and then contaminating the wafer transfer path, the pressure control of the transfer chamber is particularly important. Traditionally, the pressure of the transfer chamber is designed to be slightly higher than that of the reaction chamber. This strategy aims to establish a pressure gradient to prevent the reverse flow of contaminants and protect the wafer from contamination. However, in actual applications, since the semiconductor manufacturing process involves a variety of different processes, each process has different requirements for the bottom pressure, which means that the pressure of the transfer chamber also needs to be adjusted accordingly to meet various process requirements. In addition, when configuring vacuum pumps, users often choose products of different specifications, and there are significant differences in the pumping speed capabilities of these vacuum pumps. In order to maintain the stability of the internal pressure of the transfer chamber, when a vacuum pump with a higher pumping speed is used, the system needs to add more gas to the transfer chamber to offset the excessively fast pumping rate; on the contrary, if a pump with a lower pumping speed is used, only a small amount of gas is needed. Although this gas compensation mechanism based on pumping speed can maintain constant pressure, it inevitably introduces flow field differences. Changes in the flow field directly affect the microenvironment experienced by the wafer during transmission, especially the magnitude of the flow field disturbance, which is directly related to the performance of the particle size on the wafer surface. When the flow field is unstable or there is a significant disturbance, the wafer is prone to adsorb particulate matter in the air during transmission, resulting in contamination of the wafer surface. In severe cases, it will reduce the yield of the product and increase production costs. Utility Model Content

[0003] The embodiments of the utility model provide a transfer chamber pressure control device and a thin film deposition device, which aim to solve the problem that the conventional vacuum pump cannot adjust the pumping speed. When the user configures vacuum pumps of different specifications, the difference in flow field disturbance in the transfer chamber will cause the wafer to be contaminated by particles during the transmission process.

[0004] In a first aspect, the utility model provides a transmission chamber pressure control device, comprising:

[0005] a transfer chamber;

[0006] An air charging circuit connected to the transmission chamber, the air charging circuit being used to charge the transmission chamber with gas;

[0007] An exhaust gas circuit, comprising a vacuum pump and an exhaust speed adjusting member, wherein the exhaust speed adjusting member is connected between the vacuum pump and the transmission chamber, and the vacuum pump is used to exhaust gas from the transmission chamber;

[0008] Wherein, the pumping speed adjusting member is configured to manually change its own flow conductance to indirectly adjust the pumping speed of the vacuum pump.

[0009] Furthermore, the exhaust gas circuit also includes a control valve, which is connected between the transmission chamber and the exhaust speed adjusting member, and the control valve is used to adjust the exhaust speed of the vacuum pump by controlling its own opening.

[0010] Furthermore, the control valve is a butterfly valve or a swing valve.

[0011] Furthermore, the exhaust gas circuit also includes a connecting pipeline, the vacuum pump is connected to the exhaust speed regulating component through the connecting pipeline, and the exhaust speed regulating component is configured to change its own flow conductance to cut off the flow between the transmission chamber and the connecting pipeline.

[0012] Furthermore, the exhaust gas circuit also includes a switch valve, and the switch valve is connected between the transmission chamber and the exhaust speed adjusting component, or the switch valve is connected between the control valve and the exhaust speed adjusting component.

[0013] Furthermore, the switch valve is an angle valve or a gate valve.

[0014] Further, the pumping speed regulating member includes an operating member, a valve core and a valve body, the operating member is connected to the valve core, the valve body has a fluid channel, the valve core is arranged in the fluid channel, two ends of the valve body are respectively connected to the vacuum pump and the transmission chamber, and the operating member is configured to control the valve core to move in the fluid channel to change the flow cross-sectional area of ​​the fluid channel.

[0015] Furthermore, the pumping speed regulating member is an angle valve or a needle valve.

[0016] Furthermore, the inflation air circuit includes a first diaphragm valve, a second diaphragm valve and a mass flow meter, the first diaphragm valve is connected to the transmission chamber through a first inflation branch, the second diaphragm valve is connected to the transmission chamber through a second inflation branch, and the mass flow meter is arranged in the first inflation branch and / or the second inflation branch.

[0017] In a second aspect, the utility model further provides a thin film deposition device, comprising the above-mentioned transmission chamber pressure control device.

[0018] The utility model provides a transmission chamber pressure control device and a thin film deposition device. The transmission chamber pressure control device comprises a transmission chamber, an air charging air path and an air exhausting air path. The air charging air path is responsible for charging gas into the transmission chamber, and the air exhausting air path is responsible for exhausting gas from the transmission chamber. The air charging air path and the air exhausting air path cooperate to control the pressure in the transmission chamber. The air exhausting air path comprises a vacuum pump and an air exhausting speed regulating member. The air exhausting speed regulating member is connected between the transmission chamber and the vacuum pump. The air exhausting speed regulating member is configured to be able to manually change its own flow conductance. By manually changing the flow conductance of the air exhausting speed regulating member, it is equivalent to changing the resistance of gas transmission. In this way, even if the air exhausting speed remains unchanged, the actual air exhausting amount of the vacuum pump will increase or decrease, thereby indirectly adjusting the effective air exhausting speed of the vacuum pump to make it closer to the required target air exhausting speed, avoiding flow field disturbance, ensuring the constant pressure and flow field in the transmission chamber, and improving the wafer yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 A schematic diagram showing a transmission chamber pressure control device according to an embodiment of the utility model is shown;

[0021] Figure 2 A schematic diagram showing a transmission chamber pressure control device according to another embodiment of the utility model is shown;

[0022] Figure 3 A schematic diagram showing a transmission chamber pressure control device according to another embodiment of the utility model is shown;

[0023] Figure 4 A schematic diagram showing a pumping speed regulating member of a transmission chamber pressure control device according to an embodiment of the utility model;

[0024] Reference numerals:

[0025] 100, transmission chamber; 101, control valve; 102, switch valve; 103, pumping speed adjustment member; 103a, operating member; 103b, valve core; 103c, valve body; 104, vacuum pump; 105, first diaphragm valve; 106, second diaphragm valve; 107, mass flow meter; 108, connecting pipeline. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only for reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

[0028] Due to the differences in base pressures of different processes and the different specifications of vacuum pumps configured by users, the pressure of the transfer chamber will also be different. In order to ensure the constant pressure of the transfer chamber, it is necessary to adjust the amount of gas introduced according to the pumping speed of the pump. Specifically, for pumps with higher pumping speeds, more gas needs to be introduced; and for pumps with lower pumping speeds, less gas needs to be introduced. In practical applications, since the pumping speed cannot be adjusted, this means that once the user selects a vacuum pump of a specific specification, the flow field characteristics in the transfer chamber are limited. When the user configures vacuum pumps of different specifications, the difference in flow field disturbances in the transfer chamber may cause the wafer to be contaminated by particles during the transfer process. This situation not only affects the yield of the product, but also reduces production efficiency. Therefore, it is necessary to achieve constant pressure in the transfer chamber while reducing flow field disturbances under different vacuum pump specifications.

[0029] To this end, the embodiment of the utility model provides a transfer chamber pressure control device and a thin film deposition device, which solves the existing problem of particle contamination of wafers caused by flow field disturbances caused by different pumping speeds of different pumps. The pumping speed of the vacuum pump is indirectly adjusted by changing the flow conductance of the pumping speed adjusting component itself, thereby preventing the flow field disturbance from affecting the particle size performance of the wafer in the transfer chamber.

[0030] The embodiment of the utility model is to solve the above-mentioned flow field disturbance problem, and the specific solution idea is:

[0031] A pumping speed adjusting member is added to the exhaust pipeline, and the pumping speed adjusting member is arranged between the vacuum pump and the transmission chamber. The pumping speed adjusting member can manually change its own conductance. The higher the conductance, the smaller the flow resistance of the gas. Conversely, the lower the conductance, the greater the flow resistance of the gas. When vacuum pumps of different specifications of pumping speed are configured, for example, a vacuum pump with a larger pumping speed, since the pumping speed of the vacuum pump remains unchanged, manually changing the conductance of the pumping speed adjusting member to reduce it is equivalent to increasing the resistance of the gas on the path from the transmission chamber to the vacuum pump. In this way, even if the pumping speed of the vacuum pump remains unchanged, the actual amount of gas extracted from the transmission chamber will also decrease, thereby indirectly reducing the effective pumping speed of the vacuum pump, making it closer to the required target pumping speed. Similarly, when a vacuum pump with a smaller pumping speed is configured, manually changing the conductance of the pumping speed adjusting member to increase it is equivalent to reducing the resistance of the gas on the path from the transmission chamber to the vacuum pump. In this way, even if the pumping speed of the vacuum pump remains unchanged, the actual amount of gas extracted from the transmission chamber will also increase, thereby indirectly increasing the effective pumping speed of the vacuum pump, making it closer to the required target pumping speed. Therefore, the suction volume is adjusted by the suction speed adjusting member, thereby indirectly adjusting the suction speed of the vacuum pump, avoiding flow field disturbance, preventing the wafer from being contaminated by particles, ensuring constant pressure and flow field in the transfer chamber, and improving wafer yield.

[0032] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0033] See also Figure 1-Figure 4 The embodiment of the utility model shows a pressure control device for a transmission chamber 100, including a transmission chamber 100, an inflation gas circuit and an exhaust gas circuit, the inflation gas circuit is connected to the transmission chamber 100, and the inflation gas circuit is used to fill gas into the transmission chamber 100; the exhaust gas circuit includes a vacuum pump 104 and a pumping speed adjusting member 103, the pumping speed adjusting member 103 is connected between the vacuum pump 104 and the transmission chamber 100, and the vacuum pump 104 is used to extract gas from the transmission chamber 100; wherein the pumping speed adjusting member 103 is configured to manually change its own conductance to indirectly adjust the exhaust speed of the vacuum pump 104.

[0034] Specifically, the exhaust gas circuit is responsible for extracting gas from the transmission chamber 100, establishing and maintaining the required vacuum degree. The inflation gas circuit is responsible for filling gas into the transmission chamber 100, and is usually used to adjust the pressure in the transmission chamber 100 back to the set value after the exhaust gas circuit creates an excessively low vacuum degree. The exhaust gas circuit and the inflation gas circuit cooperate with each other in the pressure control of the transmission chamber 100. The exhaust gas circuit is responsible for reducing the chamber pressure, while the inflation gas circuit is responsible for adjusting the pressure to the set value. The balance between the two is achieved through dynamic adjustment. For example, when the exhaust gas circuit is over-exhausted and the pressure is lower than the set value, the inflation gas circuit will control a certain amount of gas to be replenished to restore to the target pressure. On the contrary, if the exhaust is insufficient, the inflation gas circuit will reduce the gas replenishment or even temporarily close to avoid excessive pressure. This dynamic mutual cooperation ensures that the pressure in the transmission chamber 100 is always within the most reasonable range. It should be noted that the gas circuit structure of the inflation gas circuit can be in various forms, as long as it meets the inflation function, and is not limited here.

[0035] Reference Figure 1 , the exhaust gas circuit of this embodiment includes a vacuum pump 104 and an exhaust speed adjusting member 103, and the vacuum pump 104 is used to extract gas from the transfer chamber 100. In practical applications, vacuum pumps 104 of different specifications have different exhaust speeds, that is, different exhaust speeds. The exhaust speed of the vacuum pump 104 is constant and cannot be adjusted. When the user configures vacuum pumps 104 of different specifications, the difference in flow field disturbance in the transfer chamber 100 will cause the wafer to be contaminated by particles during the transmission process. For this reason, an exhaust speed adjusting member 103 is added to the exhaust gas circuit, and the exhaust speed adjusting member 103 is connected to the gas circuit between the transfer chamber 100 and the vacuum pump 104. The exhaust speed adjusting member 103 is configured to manually change its own conductance. Conductance refers to a physical quantity that describes the ability of a pipeline or valve to allow fluid to pass through. In simple terms, the higher the conductance, the less resistance the valve or pipeline has to the flow of the fluid, and the fluid can pass through at a larger flow rate; conversely, the lower the conductance, the greater the resistance encountered when the fluid passes through, and the flow rate will decrease. Then, when the user configures a vacuum pump 104 with a higher pumping speed, the conductance of the pumping speed adjusting member 103 can be manually reduced to increase the resistance of the gas, so that even if the pumping speed of the vacuum pump 104 remains unchanged, the amount of gas actually pumped out of the transfer chamber 100 will also decrease, thereby indirectly reducing the effective pumping speed of the vacuum pump 104, making it closer to the required target pumping speed. Conversely, when the user configures a vacuum pump 104 with a lower pumping speed, the conductance of the pumping speed adjusting member 103 can be manually increased to reduce the resistance of the gas, so that even if the pumping speed of the vacuum pump 104 remains unchanged, the amount of gas actually pumped out of the transfer chamber 100 will also increase, thereby indirectly increasing the effective pumping speed of the vacuum pump 104, making it closer to the required target pumping speed.

[0036] Through this embodiment, manually changing the conductance of the pumping speed adjustment member 103 is equivalent to changing the resistance of gas transmission. In this way, even if the pumping speed remains unchanged, the actual pumping volume of the vacuum pump 104 will increase or decrease, thereby indirectly adjusting the effective pumping speed of the vacuum pump 104 to make it closer to the required target pumping speed, avoiding flow field disturbance, ensuring the constant pressure and flow field in the transfer chamber 100, and improving the wafer yield.

[0037] Reference Figure 2 In one embodiment, the exhaust gas circuit further includes a control valve 101, which is connected between the transmission chamber 100 and the pumping speed adjusting member 103, and is used to adjust the exhaust speed of the vacuum pump 104 by controlling its own opening. Specifically, in an actual application scenario, a control valve 101 is provided in the exhaust gas circuit, and the control valve 101 is provided between the transmission chamber 100 and the pumping speed adjusting member 103. The control valve 101 is an electric or pneumatic valve, and is used to receive a control instruction and control its own opening in response to the control instruction. The change in the opening directly affects the valve's obstruction to the gas flow, thereby changing the gas flow rate, and further realizing the pumping speed adjustment of the vacuum pump 104. The opening is usually expressed as a percentage, 0% means fully closed, and 100% means fully open. Although the pumping speed of the vacuum pump 104 can be adjusted by adjusting the opening of the control valve 101, the range of the opening adjustment of the control valve 101 is limited, or the fineness range of the opening adjustment of the control valve 101 is limited. For example, when the opening of the control valve 101 is opened to the maximum or minimum, the target pumping speed is still not reached. At this time, the flow conductance of the pumping speed adjusting member 103 can be further changed to adjust the pumping speed of the vacuum pump 104. For another example, when the opening of the control valve 101 is adjusted from 30% to 31%, the change span of the pumping speed of the vacuum pump 104 is too large. At this time, the pumping speed of the vacuum pump 104 can be finely adjusted by changing the flow conductance of the pumping speed adjusting member 103 to improve the control accuracy.

[0038] In this embodiment, the control valve 101 is a butterfly valve or a swing valve. Specifically, the opening and closing part (butterfly plate) of the butterfly valve is a disc, which rotates around the valve shaft to control the passage of the fluid. The butterfly plate is installed in the diameter direction of the pipeline. When the butterfly plate rotates to be parallel to the direction of the fluid, the valve is in a fully open state; when the butterfly plate rotates to be perpendicular to the direction of the fluid, the valve is in a fully closed state. The opening and closing action of the butterfly valve is fast, the operating torque is small, it is suitable for large-diameter pipelines, and has a good flow regulation function. The swing valve is a valve whose opening and closing part is a plug. The plug can be cylindrical, conical or other shapes. It rotates around an axis to open or close the fluid channel. The opening and closing action of the swing valve is similar to that of the butterfly valve, but the shape and size of the plug may be different. In this embodiment, an electric or pneumatic butterfly valve or a swing valve is selected as the control valve 101. Of course, it can be understood that in other embodiments, the control valve 101 can also select other valves with equivalent functions.

[0039] Reference Figure 3In one embodiment, the exhaust gas circuit further includes a connecting line 108, through which the vacuum pump 104 is connected to the pumping speed adjusting member 103, and the pumping speed adjusting member 103 is configured to change its own flow conductance to cut off the flow between the transfer chamber 100 and the connecting line 108. Specifically, in an actual production environment, the machine part responsible for wafer processing, including all components inside the equipment including the transfer chamber 100, is referred to as the machine end, which can also be understood as the production equipment itself responsible for performing the wafer processing task. The part responsible for evacuating the transfer chamber 100 and other parts that require a vacuum environment is referred to as the user pump end. Usually, these pumps are not installed inside the machine end, but are located at a remote location and connected to the machine end through the connecting line 108. Therefore, the connecting line 108 is a pipeline system connecting the machine end and the user pump end. In a large semiconductor manufacturing plant, the connecting line 108 can be very complex, covering the entire workshop or even multiple workshops, forming a network-like layout, and a complex pipeline layout is prone to leaks, which makes it difficult to quickly locate and troubleshoot the leaks. In this embodiment, one end of the connecting pipeline 108 is connected to the vacuum pump 104, and the other end is connected to the pumping speed adjusting member 103, and the pumping speed adjusting member 103 is further connected to the transmission chamber 100, and the gas in the transmission chamber 100 passes through the pumping speed adjusting member 103 and then through the connecting pipeline 108 to be pumped out by the vacuum pump 104. The pumping speed adjusting member 103 is configured to completely block the passage of gas when its own flow conductance reaches the minimum or close to the minimum, that is, it can be used as a cut-off valve, so the pumping speed adjusting member 103 can be manually adjusted to the minimum flow conductance to completely block the gas flow, cut off the flow between the transmission chamber 100 and the connecting pipeline 108, that is, disconnect the machine end from the connecting pipeline 108, the machine end and the connecting pipeline 108 are isolated from each other, do not affect each other, so that leakage on any side will not affect the test results on the other side. Then, when a leak is suspected, first close the pumping speed adjustment member 103, which separates the machine end from the connecting pipeline 108, so that leakage on either side will not affect the test results on the other side. Next, connect the leak detector to the leak detection port on the machine end, which is usually an interface specially designed for detecting leaks. The leak detector can be a helium mass spectrometer leak detector or other types of leak detection equipment that can detect extremely small leaks. Once the leak detector is connected, you can start to detect whether there is a leak on the machine end. If the leak detector does not find a leak, the leak may be on the connecting pipeline 108; conversely, if a leak is detected, the leak is at the machine end. Through this embodiment, it is possible to quickly locate whether the leak is at the machine end or the connecting pipeline 108, greatly improving the efficiency of leak detection.

[0040] Reference Figure 1 and Figure 2In one embodiment, the exhaust gas circuit further includes a switch valve 102, and the switch valve 102 is connected between the transmission chamber 100 and the pumping speed regulating member 103, or the switch valve 102 is connected between the control valve 101 and the pumping speed regulating member 103. Specifically, a switch valve 102 is also provided in the exhaust gas circuit, and the switch valve 102 is used to control the opening and closing of the entire exhaust gas circuit. The switch valve 102 can be provided between the transmission chamber 100 and the pumping speed regulating member 103, or between the pumping speed regulating member 103 and the vacuum pump 104. In this embodiment, the switch valve 102 is an angle valve or a gate valve. An angle valve is a valve whose opening and closing member is usually located at the corner between two interfaces, and the passage of the fluid can be controlled by rotating a handle or a knob. A gate valve is a valve whose opening and closing member is a gate, and the movement direction of the gate is perpendicular to the direction of the fluid, and is mainly used for full opening and full closing operations. Of course, it is understandable that other types of valves may be used as the switch valve 102 to open or close the exhaust gas circuit.

[0041] Reference Figure 4 In one embodiment, the pumping speed adjusting member 103 includes an operating member 103a, a valve core 103b and a valve body 103c, wherein the operating member 103a is connected to the valve core 103b, the valve body 103c has a fluid channel, the valve core 103b is disposed in the fluid channel, the two ends of the valve body 103c are respectively connected to the vacuum pump 104 and the transmission chamber 100, and the operating member 103a is configured to control the valve core 103b to move in the fluid channel to change the flow cross-sectional area of ​​the fluid channel. Specifically, the operating member 103a of this embodiment is an operating member for a user to manually change the flow conductance of the pumping speed adjusting member 103, and the operating member 103a may be, for example, a knob, a handle or the like. A fluid channel is provided in the valve body 103c, and the inlet and outlet of the fluid channel are connected to the vacuum pump 104 and the transmission chamber 100 respectively. The valve core 103b is movably provided in the fluid channel, and the valve core 103b is connected to the operating member 103a, and the operating member 103a is used to drive the movement of the valve core 103b in the fluid channel. Specifically, the valve core 103b can move in the fluid channel in a direction perpendicular to the flow direction of the gas, so that the movement of the valve core 103b can change the flow cross-sectional area of ​​the fluid channel. The smaller the flow cross-sectional area, the greater the resistance to gas flow; the larger the flow cross-sectional area, the smaller the resistance to gas flow. Of course, it can be understood that the valve core 103b can also adopt other movement modes, which are not limited here.

[0042] In this embodiment, the pumping speed regulating member 103 is an angle valve or a needle valve. Specifically, the fluid channel of the angle valve is set at a vertical angle of 90 degrees, and the operating member 103a of the angle valve is a rotating first wheel. By rotating the hand wheel, the vertical movement of the valve core 103b is changed to change the cross-sectional area of ​​the fluid channel, thereby realizing the flow cross-sectional area of ​​the exhaust pipeline, thereby affecting the effective pumping speed of the vacuum pump 104, so that the vacuum pump 104 with a larger pumping speed can also achieve the pumping effect of the vacuum pump 104 with a smaller pumping speed. The needle valve has a slender needle plunger as an opening and closing member, which is perpendicular to the direction of fluid flow and can be moved axially to adjust or block the fluid channel. The needle valve can also raise or lower the needle plunger by rotating the handle, change the gap between the needle and the valve body 103c, change the cross-sectional area of ​​the fluid channel, thereby controlling the flow of the fluid, thereby affecting the effective pumping speed of the vacuum pump 104, so that the vacuum pump 104 with a larger pumping speed can also achieve the pumping effect of the vacuum pump 104 with a smaller pumping speed. Of course, it is understandable that the pumping speed adjusting member 103 may also be other valves with fine adjustment function.

[0043] Reference Figure 1-Figure 3 In one embodiment, the inflation gas circuit includes a first diaphragm valve 105, a second diaphragm valve 106 and a mass flowmeter 107, the first diaphragm valve 105 is connected to the transmission chamber 100 through a first inflation branch, the second diaphragm valve 106 is connected to the transmission chamber 100 through a second inflation branch, and the mass flowmeter 107 is arranged in the first inflation branch and / or the second inflation branch. Specifically, the inflation gas circuit has a first inflation branch and a second inflation branch, both of which are connected to the transmission chamber 100, the first diaphragm valve 105 is arranged in the first inflation branch, the second diaphragm valve 106 is arranged in the second inflation branch, and the first diaphragm valve 105 and the second diaphragm valve 106 are respectively in two different branches for controlling the inflow of gas. The mass flowmeter 107 is arranged in one of the inflation branches or both inflation branches, and the mass flowmeter 107 is a precision instrument specially designed to directly measure the mass flow of the medium passing through the flowmeter. In this embodiment, the mass flow meter 107 is used to accurately measure and control the gas flow entering the transmission chamber 100 to ensure the accuracy of the amount of gas replenishment. When the exhaust gas circuit is over-exhausted and the pressure is lower than the set value, the inflation gas circuit will measure and control a certain amount of gas replenishment through the mass flow meter 107 to restore the target pressure.

[0044] The present invention also provides a thin film deposition device, including the pressure control device of the transfer chamber 100 of the above embodiment. The pressure control device of the transfer chamber 100 has been described in detail in the above embodiment, and will not be described again for the sake of brevity.

[0045] Through this embodiment, after the vacuum pump 104 is selected, the pumping speed of the vacuum pump 104 can still be indirectly adjusted by the pumping speed adjusting member 103, thereby avoiding flow field disturbance, improving the granularity performance of the wafer, ensuring the constant pressure and flow field in the transmission cavity, and improving the wafer yield. Moreover, the pumping speed adjusting member 103 can also avoid the limitation of the opening adjustment of the control valve 101, and improve the pressure control accuracy. In addition, the pumping speed adjusting member 103 can also be used as a cut-off valve. When there is a leak in the equipment, the machine end or the connecting pipeline 108 can be checked for leaks respectively, and the pipeline can be quickly located to see if there is a leak, thereby improving work efficiency.

[0046] The above is only a specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the utility model, and these modifications or replacements should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A transmission chamber pressure control device, characterized in that: include: a transfer chamber; An air charging circuit connected to the transmission chamber, the air charging circuit being used to charge the transmission chamber with gas; An exhaust gas circuit, comprising a vacuum pump and an exhaust speed adjusting member, wherein the exhaust speed adjusting member is connected between the vacuum pump and the transmission chamber, and the vacuum pump is used to exhaust gas from the transmission chamber; Wherein, the pumping speed adjusting member is configured to manually change its own flow conductance to indirectly adjust the pumping speed of the vacuum pump.

2. The transmission chamber pressure control device according to claim 1, characterized in that: The exhaust gas circuit also includes a control valve, which is connected between the transmission chamber and the exhaust speed adjusting member. The control valve is used to adjust the exhaust speed of the vacuum pump by controlling its own opening.

3. The transmission chamber pressure control device according to claim 2, characterized in that: The control valve is a butterfly valve or a swing valve.

4. The transmission chamber pressure control device according to claim 1, characterized in that: The exhaust gas circuit also includes a connecting pipeline, through which the vacuum pump is connected to the exhaust speed regulating component, and the exhaust speed regulating component is configured to change its own flow conductance to cut off the flow between the transmission chamber and the connecting pipeline.

5. The transmission chamber pressure control device according to claim 2, characterized in that: The exhaust gas circuit further includes a switch valve, which is connected between the transmission chamber and the exhaust speed adjusting component, or the switch valve is connected between the control valve and the exhaust speed adjusting component.

6. The transmission chamber pressure control device according to claim 5, characterized in that: The switch valve is an angle valve or a gate valve.

7. The transmission chamber pressure control device according to any one of claims 1 to 6, characterized in that: The pumping speed regulating member includes an operating member, a valve core and a valve body, wherein the operating member is connected to the valve core, the valve body has a fluid channel, the valve core is arranged in the fluid channel, two ends of the valve body are respectively connected to the vacuum pump and the transmission chamber, and the operating member is configured to control the valve core to move in the fluid channel to change the flow cross-sectional area of ​​the fluid channel.

8. The transmission chamber pressure control device according to claim 7, characterized in that: The pumping speed regulating member is an angle valve or a needle valve.

9. The transmission chamber pressure control device according to any one of claims 1 to 6, characterized in that: The inflation air circuit includes a first diaphragm valve, a second diaphragm valve and a mass flow meter. The first diaphragm valve is connected to the transmission chamber via a first inflation branch, the second diaphragm valve is connected to the transmission chamber via a second inflation branch, and the mass flow meter is arranged in the first inflation branch and / or the second inflation branch.

10. A thin film deposition device, characterized in that: It comprises a transmission chamber pressure control device as described in any one of claims 1-9.

Images