Current limiting element and equipment for preparing semiconductor film layer

Abstract

The utility model provides a current-limiting element and a device for preparing a semiconductor film layer, the current-limiting element is arranged on a first ventilation pipeline between a first valve and the surface of liquid in a liquid storage bottle, and the current-limiting element comprises at least one current-limiting pipeline; the first end of the first ventilation pipeline is inserted below the surface of liquid in the liquid storage bottle; a first valve and a second valve are arranged on the first ventilation pipeline; the first valve is positioned between the second valve and the inlet / outlet of the liquid storage bottle; the first pipe section and the second pipe section of the first ventilation pipeline are communicated through at least one flow limiting pipeline, the area of a first pipe opening of the flow limiting pipeline is smaller than that of a second pipe opening, the first pipe opening is away from the first valve, and the second pipe opening is close to the first valve. The area of the first pipe opening of the flow limiting pipeline of the flow limiting element is smaller than that of the second pipe opening, the upward backward flowing speed of liquid in the liquid storage bottle can be effectively reduced, and the risk that the liquid enters the first ventilation pipeline on the other side of the first valve is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a current limiting element and equipment for preparing a semiconductor film layer. Background Art

[0002] Metal-Organic Chemical Vapor Deposition (MOCVD) is a commonly used method for preparing semiconductor films, and is widely used due to its advantages of fast preparation speed and mass production. In the process of depositing TiN films by MOCVD, tetrakis dimethylaminotitanium (TDMAT) as a reaction raw material is generally supplied by bubbling method or spray gasification method. In the process of supplying the reaction raw material by bubbling method, a carrier gas is generally introduced through a ventilation pipe to carry TDMAT in a liquid storage bottle (also called a source bottle) into a reaction chamber.

[0003] However, in the related art, the bubbling method is used to supply TDMAT to the equipment, and the ventilation pipe is inserted below the liquid level of TDMAT in the liquid storage bottle. It is easy for TDMAT to flow back into the ventilation pipe, which may cause abnormal preparation process and product scrapping. Utility Model Content

[0004] A series of simplified concepts are introduced in the utility model content section, which will be further described in detail in the detailed implementation section. The utility model content section of the utility model does not mean to attempt to define the key features and essential technical features of the technical solution claimed for protection, nor does it mean to attempt to determine the scope of protection of the technical solution claimed for protection.

[0005] In order to at least partially solve the above technical problems, the utility model provides a flow limiting element on one hand, which is a first ventilation pipe arranged between a first valve and the surface of the liquid in the liquid storage bottle, wherein the first end of the first ventilation pipe is inserted below the surface of the liquid in the liquid storage bottle, and is used to introduce carrier gas into the liquid storage bottle; the first ventilation pipe is provided with the first valve and the second valve, the first valve is located between the second valve and the inlet and outlet of the liquid storage bottle, and the first ventilation pipe includes a first pipe section away from the first valve and a second pipe section close to the first valve;

[0006] The flow-limiting element comprises: at least one flow-limiting pipeline;

[0007] Wherein, the first pipe section and the second pipe section are connected through at least one of the flow-limiting pipes, the area of ​​the first pipe opening of the flow-limiting pipe is smaller than the area of ​​the second pipe opening of the flow-limiting pipe, the first pipe opening is far away from the first valve, and the second pipe opening is close to the first valve.

[0008] Exemplarily, the flow-limiting element further includes a blocking portion, which is connected to a pipe wall of the flow-limiting pipe and extends to the periphery of the flow-limiting pipe to cover a pipe opening of the first pipe section.

[0009] Exemplarily, the flow limiting element further includes a cylindrical body, and the flow limiting conduit is a channel arranged in the body.

[0010] Exemplarily, the first pipe segment and the second pipe segment are directly connected, the flow limiting element is arranged in the first ventilation pipe, and the first pipe opening of the flow limiting pipe is arranged at the connection between the first pipe segment and the second pipe segment; or,

[0011] The first pipe section and the second pipe section are indirectly connected through the flow limiting element, the first pipe opening of the flow limiting pipeline is connected to the pipe opening of the first pipe section, and the second pipe opening of the flow limiting pipeline is connected to the pipe opening of the second pipe section.

[0012] Exemplarily, the cross-sectional area of ​​the flow-limiting conduit gradually increases from the first pipe opening to the second pipe opening; and / or

[0013] The area of ​​the second pipe opening of the flow-limiting pipe is more than twice the area of ​​the first pipe opening.

[0014] Another aspect of the present invention provides an apparatus for preparing a semiconductor film layer, comprising:

[0015] The above-mentioned current limiting element;

[0016] A liquid storage bottle, used to contain liquid;

[0017] a first ventilation conduit, a first end of which is inserted below the surface of the liquid in the liquid storage bottle and is used to introduce carrier gas into the liquid storage bottle;

[0018] A first valve and a second valve are arranged on the first ventilation pipe, wherein the first valve is located between the second valve and the inlet and outlet of the liquid storage bottle;

[0019] The first ventilation pipeline includes a first pipe section located away from the first valve and a second pipe section close to the second valve, and the first pipe section and the second pipe section are connected through a flow limiting pipeline of at least one of the flow limiting elements.

[0020] Exemplarily, it also includes:

[0021] a reaction chamber;

[0022] a second ventilation pipe, two ends of which are respectively connected to the reaction chamber and the liquid storage bottle, wherein one end of the second ventilation pipe connected to the liquid storage bottle is located above the surface of the liquid in the liquid storage bottle, and is used to pass the carrier gas and the vapor of the liquid in the liquid storage bottle into the reaction chamber;

[0023] The third valve is arranged on the second ventilation pipe.

[0024] Exemplarily, it also includes:

[0025] a fourth valve, disposed on the second ventilation pipe between the third valve and the reaction chamber;

[0026] a third ventilation duct, respectively connecting the first ventilation duct between the first valve and the second valve and the second ventilation duct between the third valve and the fourth valve;

[0027] A fifth valve is provided on the third ventilation duct, wherein:

[0028] When the first valve, the second valve, the third valve and the fourth valve are in an open state, the fifth valve is in a closed state;

[0029] When the second valve, the fourth valve and the fifth valve are in an open state, the first valve and the third valve are in a closed state.

[0030] Exemplarily, it also includes:

[0031] a fourth ventilation duct, one end of which is connected to the second ventilation duct between the third valve and the fourth valve;

[0032] The sixth valve is arranged on the fourth ventilation duct. When the first valve, the second valve, the third valve and the fourth valve are in the open state, the sixth valve is in the closed state.

[0033] Exemplarily, the liquid in the liquid storage bottle is tetrakisdimethylaminotitanium, and the carrier gas includes at least one gas selected from helium, argon and nitrogen.

[0034] The utility model discloses a flow limiting element and a device for preparing a semiconductor film layer, wherein the flow limiting element is arranged in a first ventilation conduit between a first valve and the surface of liquid in a liquid storage bottle, wherein an area of ​​a first pipe opening of the flow limiting conduit of the flow limiting element away from the first valve is smaller than an area of ​​a second pipe opening close to the first valve, and can effectively slow down the speed at which liquid in the liquid storage bottle flows back upward when liquid in the liquid storage bottle flows back, thereby reducing the risk of liquid entering the first ventilation conduit on the other side of the first valve, that is, reducing the risk of liquid entering the first ventilation conduit between the first valve and the second valve, thereby reducing the risk of abnormal preparation process and product scrapping, and reducing the scrap rate of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The following drawings of the present invention are used as a part of the present invention for understanding the present invention. The drawings show the embodiments of the present invention and their descriptions, and are used to explain the principle of the present invention.

[0036] In the attached figure:

[0037] Figure 1 A schematic diagram showing the structure of a device for supplying TDMAT using a bubbling method in the related art;

[0038] Figure 2 A schematic diagram showing the position and structure of a current limiting element in a specific embodiment of the utility model;

[0039] Figure 3 A schematic diagram showing the structure of a current limiting element according to a specific embodiment of the present utility model is shown;

[0040] Figure 4 A schematic diagram showing the structure of a current limiting element according to another specific embodiment of the present invention is shown;

[0041] Figure 5 A schematic structural diagram of an apparatus for preparing a semiconductor film layer according to a specific embodiment of the utility model is shown. DETAILED DESCRIPTION

[0042] Next, the utility model will be described more completely in conjunction with the accompanying drawings, in which embodiments of the utility model are shown. However, the utility model can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and fully convey the scope of the utility model to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0043] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0044] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0045] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field of the utility model. It will also be understood that terms such as those defined in commonly used dictionaries should be understood to have the same meaning as they have in the context of the relevant field and / or this specification, and should not be interpreted in an ideal or overly formal sense unless expressly defined herein.

[0046] In the process of depositing TiN film by MOCVD, the equipment used in the related art to supply TDMAT as a reaction raw material by bubbling method is as follows: Figure 1 As shown, the liquid storage bottle 110 contains TDMAT as a reaction raw material, and the ventilation pipe 120 is provided with valves 1 and 6. A carrier gas is introduced into one end of the ventilation pipe to carry the vapor of TDMAT in the liquid storage bottle 110 to the reaction chamber 130 for use as a reaction raw material for the MOCVD process.

[0047] In the process of carrying TDMAT to the reaction chamber 130, each valve in the entire device will be opened and closed in the order set in the system program. In the normal order, valves 4 and 5 are closed normally, and valves 2, 6 and 1 are opened in sequence, that is, valve 2 is opened first, then valve 6, and finally valve 1. After valve 6 is opened, the carrier gas will enter the ventilation pipe 120 to form a high pressure in front of valve 1. After valve 1 is opened, the carrier gas flow can be normally passed to below the liquid level of TDMAT in the liquid storage bottle 110, thereby bringing out the vapor of TDMAT into the reaction chamber 130 for reaction.

[0048] However, the inventors of the present application have found that: when the opening sequence of valve 1 and valve 6 is abnormal, for example, when valve 4 and valve 5 are normally closed, valve 1 opens before valve 6, that is, valve 1 is opened in advance when valve 6 is not yet opened; at this time, the carrier gas has not yet been introduced into the ventilation pipe 120, resulting in a low gas pressure, while the TDMAT in the liquid storage bottle 110 has a high gas pressure at high temperature. At the moment when valve 1 opens before valve 6, Figure 1 As shown, the TDMAT in the liquid storage bottle 110 will flow back into the ventilation pipe 120 on the other side of the valve 1 due to the air pressure difference, resulting in TDMAT residue. More specifically, TDMAT will flow back into the ventilation pipe 120 between the valve 1 and the valve 6, resulting in TDMAT residue.

[0049] In this way, in a situation where there is no need to drive the vapor of TDMAT into the reaction chamber 130, the carrier gas will drive the vapor of TDMAT remaining between valve 1 and valve 6 into the reaction chamber 130, causing an abnormal preparation process and further causing the product to be scrapped; for example, when valves 3, 4 and 6 are opened and valves 1 and 2 are closed, only carrier gas but no TDMAT needs to be introduced into the reaction chamber 130 at this time, but the carrier gas will drive the vapor of TDMAT remaining between valve 1 and valve 6 into the reaction chamber 130.

[0050] In the related art, only when a problem occurs in the system program resulting in an abnormal valve opening sequence, can a corresponding delay time be set for the slower-responding valve to prevent the TDMAT backflow problem; however, this method is cumbersome to set and cannot fully cover the constantly changing state of the valve during use, and its application is greatly limited.

[0051] Therefore, in view of the existence of the aforementioned technical problems, the utility model proposes a flow limiting element, which is arranged in a first ventilation pipe between a first valve and the surface of the liquid in the liquid storage bottle, and the flow limiting element includes at least one flow limiting pipe;

[0052] The first end of the first ventilation pipe is inserted below the surface of the liquid in the liquid storage bottle, and is used to pass the carrier gas into the liquid storage bottle;

[0053] The first ventilation pipe is provided with the first valve and the second valve, and the first valve is located between the second valve and the inlet and outlet of the liquid storage bottle;

[0054] Wherein, the first ventilation pipe includes a first pipe section away from the first valve and a second pipe section close to the first valve, the first pipe section and the second pipe section are connected through at least one of the flow limiting pipes, the area of ​​the first pipe opening of the flow limiting pipe is smaller than the area of ​​the second pipe opening of the flow limiting pipe, the first pipe opening is away from the first valve, and the second pipe opening is close to the first valve.

[0055] The flow limiting element of the utility model is arranged in the first ventilation pipe between the first valve and the surface of the liquid in the liquid storage bottle. The area of ​​the first pipe opening of the flow limiting pipe of the flow limiting element away from the first valve is smaller than the area of ​​the second pipe opening close to the first valve. When the liquid in the liquid storage bottle flows back, the speed of the liquid flowing back upward can be effectively slowed down, and the risk of the liquid entering the first ventilation pipe on the other side of the first valve is reduced, that is, the risk of the liquid entering the first ventilation pipe between the first valve and the second valve is reduced, thereby reducing the risk of abnormal preparation process and product scrapping, and reducing the scrap rate of the product.

[0056] Below, reference Figures 2 to 4 The current limiting element in the embodiment of the present application is described, wherein: Figure 2 A schematic diagram showing the position and structure of a current limiting element in a specific embodiment of the utility model is shown. Figure 3 The structure diagram of the current limiting element of a specific embodiment of the utility model is shown. Figure 4 A schematic structural diagram of a current limiting element according to another specific embodiment of the utility model is shown.

[0057] like Figure 2 As shown, the flow limiting element 210 is arranged in the first ventilation pipe 220 between the first valve 221 and the surface of the liquid in the liquid storage bottle 230, and the flow limiting element includes at least one flow limiting pipe 211. The first ventilation pipe 220 is provided with a first valve 221 and a second valve 222, and the first valve 331 is located between the second valve 222 and the inlet and outlet of the liquid storage bottle 230; the first end of the first ventilation pipe 220 is inserted below the surface of the liquid in the liquid storage bottle 230, and is used to pass the carrier gas into the liquid storage bottle 230. More specifically, the first end of the first ventilation pipe 220 is inserted below the liquid surface of the liquid in the liquid storage bottle 230 through the inlet and outlet of the liquid storage bottle 230.

[0058] Among them, Figure 2As shown, the first ventilation pipe 220 includes a first pipe section 2201 away from the first valve 221 and a second pipe section 2202 close to the first valve 221, the first pipe section 2201 and the second pipe section 2202 are connected through at least one flow-limiting pipe 211, the area of ​​the first pipe opening 2111 of the flow-limiting pipe 211 is smaller than the area of ​​the second pipe opening 2112 of the flow-limiting pipe 211, wherein the first pipe opening 2111 is away from the first valve 221, and the second pipe opening 2112 is close to the first valve 221. Exemplarily, the first pipe section 2201 is a pipe section located below the flow-limiting element 210; the second pipe section 2202 may be a pipe section located between the first valve 221 and the flow-limiting element 210, or may be all pipe sections in the first ventilation pipe 220 except the first pipe section 2201.

[0059] In one example, the first tube opening 2111 of the flow limiting pipe 211 of the flow limiting element 210 is far away from the first valve 221, and the second tube opening 2112 is close to the first valve 221. In other words, the first tube opening 2111 is closer to the liquid level in the liquid storage bottle 230 than the second tube opening 2112. When the first valve 221 is opened before the second valve 222, due to the pressure difference, the liquid in the liquid storage bottle 230 flows back upward. When the liquid in the liquid storage bottle 230 flows back upward, it will first flow into the first pipe opening 2111 of the flow limiting pipe 211, and then flow from the first pipe opening 2111 to the second pipe opening 2112. Since the area of ​​the first pipe opening 2111 is smaller than that of the second pipe opening 2112, the liquid flows from the first pipe opening 2111 to the second pipe opening 2112, which is equivalent to flowing from a pipe with a small area to a pipe with a large area. The flow rate of the liquid will drop sharply, and the difficulty of the liquid flowing into the first ventilation pipe 220 on the other side of the first valve 221 through the flow limiting pipe 211 will be greatly increased, thereby effectively reducing the risk of the liquid in the liquid storage bottle 230 entering the first ventilation pipe 220 on the other side of the first valve 221, that is, effectively reducing the risk of the liquid in the liquid storage bottle 230 entering the first ventilation pipe 220 between the first valve 221 and the second valve 222.

[0060] In one example, the liquid in the liquid storage bottle 230 is tetrakis dimethylaminotitanium (TDMAT), the carrier gas introduced into the first ventilation pipe 220 includes at least one of helium, argon and nitrogen, and the device where the current limiting element 210 is located is a device for supplying TDMAT as a reaction raw material for preparing TiN thin film by MOCVD process by bubbling method. It is worth noting that the current limiting element of the present application can also be applied to any other device for supplying reaction principle by bubbling method, and the present application does not limit this. In other embodiments, the carrier gas can also include any other suitable inert gas or a mixed gas composed of multiple inert gases.

[0061] In one example, the cross-sectional area of ​​the flow-limiting pipe 211 of the flow-limiting element 210 gradually increases from the first pipe opening 2111 to the second pipe opening 2112. For example, taking the flow-limiting pipe 211 arranged in the vertical direction as an example, the cross-sectional area of ​​the flow-limiting pipe 211 refers to the area of ​​the cross section of each part of the flow-limiting pipe 211 along the horizontal direction, that is, the cross-sectional area refers to the area of ​​the cross section along the direction perpendicular to the axial direction of the flow-limiting pipe. For example, when the flow-limiting pipe 211 is a truncated cone-shaped pipe, the diameter of the flow-limiting pipe 211 gradually increases from the first pipe opening 2111 to the second pipe opening 2112.

[0062] In one example, in order to effectively slow down the speed of liquid backflow, the area of ​​the second pipe opening 2112 of the flow-limiting pipe 211 of the flow-limiting element 210 is more than twice the area of ​​the first pipe opening 2111. In other embodiments, the ratio of the area of ​​the first pipe opening 2111 to the area of ​​the second pipe opening 2112 can also be any other suitable ratio, which is not limited in the present application.

[0063] In one example, the specific shape and material of the flow limiting pipe 211, the shapes of the first pipe opening 2111 and the second pipe opening 2112, and the length of the flow limiting pipe 211 are not specifically limited and should be appropriately set according to actual conditions (for example, temperature, liquid storage bottle size, first ventilation pipe size, etc.).

[0064] In one example, if Figure 3 As shown, the flow-limiting element 210 further includes a baffle 212, which is connected to the tube wall of the flow-limiting pipe 211 and extends to the four sides of the flow-limiting pipe 211 to cover the tube opening of the first tube segment. Exemplarily, the baffle 212 can be integrally formed with the flow-limiting pipe 211. Exemplarily, the material of the baffle 212 is not specifically limited. In some embodiments, the number of baffles 212 can be two, one of which covers the tube opening of the first tube segment, and the other covers the tube opening of the second tube segment, so as to limit the liquid to flow only between the first tube segment and the second tube segment through the flow-limiting element 210.

[0065] In another example, Figure 4 As shown, the flow limiting element 210 further includes a cylindrical body, and the flow limiting conduit 211 is a channel disposed in the cylindrical body.

[0066] In one example, the first pipe segment 2201 and the second pipe segment 2202 are directly connected, the flow limiting element 210 is arranged in the first ventilation duct 220 and the first pipe opening 2111 of the flow limiting duct 211 is arranged at the connection between the first pipe segment 2201 and the second pipe segment 2202; or, the first pipe segment 2201 and the second pipe segment 2202 are indirectly connected through the flow limiting element 210, the first pipe opening 2111 of the flow limiting duct 211 is connected to the pipe opening of the first pipe segment 2201, and the second pipe opening 2112 of the flow limiting duct 211 is connected to the pipe opening of the second pipe segment.

[0067] So far, the introduction to the structure of the current limiting element of the present invention has been completed. A complete current limiting element may also include other component structures, which will not be described one by one here.

[0068] In summary, the flow limiting element of the utility model is arranged in the first ventilation conduit between the first valve and the surface of the liquid in the liquid storage bottle. The area of ​​the first pipe opening of the flow limiting conduit of the flow limiting element away from the first valve is smaller than the area of ​​the second pipe opening close to the first valve. When the liquid in the liquid storage bottle flows back, the speed of the liquid flowing back upward can be effectively slowed down, and the risk of the liquid entering the first ventilation conduit on the other side of the first valve is reduced, that is, the risk of the liquid entering the first ventilation conduit between the first valve and the second valve is reduced, thereby reducing the risk of abnormal preparation process and product scrapping, and reducing the scrap rate of the product.

[0069] Another embodiment of the present invention also provides a device for preparing a semiconductor film layer. Figure 5 The device for preparing the semiconductor film layer in the embodiment of the present application is described. Figure 5 The schematic diagram of the structure of the device for preparing the semiconductor film layer according to a specific embodiment of the utility model is shown. Figure 5 As shown, the device for preparing a semiconductor film layer of the present application includes: the current limiting element 210 mentioned above; a liquid storage bottle 230, used to contain liquid; a first ventilation pipe 220, the first end of the first ventilation pipe 220 is inserted below the surface of the liquid in the liquid storage bottle 230, and is used to introduce a carrier gas into the liquid storage bottle 230. More specifically, the first end of the first ventilation pipe 220 is inserted below the liquid surface of the liquid in the liquid storage bottle 230 through the inlet and outlet of the liquid storage bottle 230; a first valve 221 and a second valve 222 are arranged on the first ventilation pipe 220, and the first valve 331 is located between the second valve 222 and the inlet and outlet of the liquid storage bottle 230; wherein the first ventilation pipe 220 includes a first pipe section 2201 away from the first valve 221 and a second pipe section 2202 close to the first valve 221, and the first pipe section 2201 and the second pipe section 2202 are connected by at least one current limiting pipe 211.

[0070] In one example, the liquid in the liquid storage bottle 230 is tetrakis dimethylaminotitanium (TDMAT), the carrier gas introduced into the first ventilation pipe 220 includes at least one of helium, argon and nitrogen, and the device for preparing a semiconductor film layer of the present application is a device for supplying TDMAT as a reaction raw material for preparing a TiN film by a MOCVD process by a bubbling method. It is worth noting that the device of the present application can also be any other device for supplying a reaction principle by a bubbling method, and the present application does not limit this.

[0071] In one example, if Figure 5 As shown, the device for preparing a semiconductor film layer of the present application further includes: a reaction chamber 240; a second ventilation pipe 250, respectively connected to the reaction chamber 240 and the liquid storage bottle 230, wherein one end of the second ventilation pipe 250 connected to the liquid storage bottle 230 is located above the surface of the liquid in the liquid storage bottle 230, and is used to pass the carrier gas and the vapor of the liquid in the liquid storage bottle 230 into the reaction chamber 240; a third valve 251, which is arranged on the second ventilation pipe 250. Exemplarily, taking TDMAT as an example, the vapor of TDMAT is brought into the reaction chamber 240 along with the carrier gas through the second ventilation pipe 250 for preparing a TiN film layer.

[0072] In one example, if Figure 5 As shown, the device for preparing a semiconductor film layer of the present application also includes: a fourth valve 252, which is arranged on the second ventilation duct 250 between the third valve 251 and the reaction chamber 240; a third ventilation duct 260, which is respectively connected to the first ventilation duct 220 between the first valve 221 and the second valve 222 and the second ventilation duct 250 between the third valve 251 and the fourth valve 252; and a fifth valve 261, which is arranged on the third ventilation duct 260.

[0073] In one example, when the first valve 221, the second valve 222, the third valve 251 and the fourth valve 252 are in the open state, the fifth valve 261 is in the closed state, and at this time, the carrier gas carries the vapor of the liquid in the liquid storage bottle 230 into the reaction chamber 240; when the second valve 222, the fourth valve 252 and the fifth valve 261 are in the open state, the first valve 221 and the third valve 251 are in the closed state, and at this time, there is no need to carry the vapor of the liquid in the liquid storage bottle 230 into the reaction chamber 240, and only the carrier gas is passed into the reaction chamber 240.

[0074] In one example, if Figure 5As shown, the device for preparing a semiconductor film layer of the present application further includes: a fourth ventilation pipeline 270, one end of which is connected to the second ventilation pipeline 250 between the third valve 251 and the fourth valve 252; and a sixth valve 271, which is arranged on the fourth ventilation pipeline 270. Exemplarily, the fourth ventilation pipeline 270 is used to introduce a carrier gas into the reaction chamber 240.

[0075] In one example, when the first valve 221 , the second valve 222 , the third valve 251 , and the fourth valve 252 are in an open state, the sixth valve 271 is in a closed state.

[0076] It is worth mentioning that the equipment used to prepare the semiconductor film layer can be a MOCVD equipment, or other suitable equipment.

[0077] This completes the introduction to the structure of the device for preparing a semiconductor film layer of the present application. The complete device may also include other component structures, which will not be described one by one here.

[0078] In summary, in the equipment for preparing semiconductor film layers of the utility model, the flow limiting element is arranged in the first ventilation duct between the first valve and the surface of the liquid in the liquid storage bottle, and the area of ​​the first pipe opening of the flow limiting duct of the flow limiting element away from the first valve is smaller than the area of ​​the second pipe opening close to the first valve, which can effectively slow down the speed of the liquid flowing back upward when the liquid in the liquid storage bottle flows back, and reduce the risk of the liquid entering the first ventilation duct on the other side of the first valve, that is, reduce the risk of the liquid entering the first ventilation duct between the first valve and the second valve, thereby reducing the risk of abnormal preparation process and product scrapping, and reducing the scrap rate of the product.

[0079] Although multiple embodiments are described herein, it should be understood that a variety of other modifications and embodiments may be conceived by those skilled in the art, all of which will fall within the spirit and scope of the concepts disclosed in the present utility model. More particularly, within the scope of the present utility model disclosure, the accompanying drawings, and the appended claims, various modifications and changes may be made in the arrangement and / or components of the combined arrangement of the subject matter. In addition to modifications and changes to the components and / or arrangements, the use of alternatives is also an obvious choice for those skilled in the art.

Claims

1. A current limiting element, characterized in that: A first ventilation pipe is arranged between the first valve and the surface of the liquid in the liquid storage bottle, wherein the first end of the first ventilation pipe is inserted below the surface of the liquid in the liquid storage bottle and is used to introduce carrier gas into the liquid storage bottle; the first ventilation pipe is provided with the first valve and the second valve, the first valve is located between the second valve and the inlet and outlet of the liquid storage bottle, and the first ventilation pipe includes a first pipe section away from the first valve and a second pipe section close to the first valve; The flow limiting element comprises: at least one flow limiting pipeline; Wherein, the first pipe section and the second pipe section are connected through at least one of the flow-limiting pipes, the area of ​​the first pipe opening of the flow-limiting pipe is smaller than the area of ​​the second pipe opening of the flow-limiting pipe, the first pipe opening is far away from the first valve, and the second pipe opening is close to the first valve.

2. The current limiting element according to claim 1, characterized in that: The flow-limiting element further includes a blocking portion, which is connected to the pipe wall of the flow-limiting pipe and extends to the periphery of the flow-limiting pipe to cover the pipe opening of the first pipe section.

3. The current limiting element according to claim 1, characterized in that: The flow limiting element further comprises a cylindrical body, and the flow limiting conduit is a channel arranged in the body.

4. The current limiting element according to claim 1, characterized in that: The first pipe section and the second pipe section are directly connected, the flow limiting element is arranged in the first ventilation pipe, and the first pipe opening of the flow limiting pipe is arranged at the connection between the first pipe section and the second pipe section; or, The first pipe section and the second pipe section are indirectly connected through the flow limiting element, the first pipe opening of the flow limiting pipeline is connected to the pipe opening of the first pipe section, and the second pipe opening of the flow limiting pipeline is connected to the pipe opening of the second pipe section.

5. The current limiting element according to claim 1, characterized in that: The cross-sectional area of ​​the flow-limiting pipe gradually increases from the first pipe opening to the second pipe opening; and / or The area of ​​the second pipe opening of the flow-limiting pipe is more than twice the area of ​​the first pipe opening.

6. A device for preparing a semiconductor film layer, characterized in that: include: The current limiting element according to any one of claims 1 to 5; Liquid storage bottle, used to contain liquid; a first ventilation conduit, a first end of which is inserted below the surface of the liquid in the liquid storage bottle and is used to introduce carrier gas into the liquid storage bottle; A first valve and a second valve are arranged on the first ventilation pipe, wherein the first valve is located between the second valve and the inlet and outlet of the liquid storage bottle; The first ventilation pipeline includes a first pipe section located away from the first valve and a second pipe section close to the second valve, and the first pipe section and the second pipe section are connected through a flow limiting pipeline of at least one of the flow limiting elements.

7. The device according to claim 6, characterized in that Also includes: a reaction chamber; a second ventilation pipe, two ends of which are respectively connected to the reaction chamber and the liquid storage bottle, wherein one end of the second ventilation pipe connected to the liquid storage bottle is located above the surface of the liquid in the liquid storage bottle, and is used to pass the carrier gas and the vapor of the liquid in the liquid storage bottle into the reaction chamber; The third valve is arranged on the second ventilation pipe.

8. The device according to claim 7, characterized in that Also includes: a fourth valve, disposed on the second ventilation pipe between the third valve and the reaction chamber; a third ventilation duct, respectively connecting the first ventilation duct between the first valve and the second valve and the second ventilation duct between the third valve and the fourth valve; A fifth valve is provided on the third ventilation duct, wherein: When the first valve, the second valve, the third valve and the fourth valve are in an open state, the fifth valve is in a closed state; When the second valve, the fourth valve and the fifth valve are in an open state, the first valve and the third valve are in a closed state.

9. The device according to claim 8, characterized in that Also includes: a fourth ventilation duct, one end of which is connected to the second ventilation duct between the third valve and the fourth valve; The sixth valve is arranged on the fourth ventilation duct. When the first valve, the second valve, the third valve and the fourth valve are in the open state, the sixth valve is in the closed state.

10. The device according to claim 6, characterized in that The liquid in the liquid storage bottle is tetrakis dimethylamino titanium, and the carrier gas includes at least one gas selected from helium, argon and nitrogen.

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