Three-wavelength laser beam combining device

Abstract

The utility model discloses a three-wavelength laser beam combining device which comprises a first beam combining module, a second beam combining module and a polarization beam splitter, laser from the first beam combining module is emitted to the polarization beam splitter and penetrates through the polarization beam splitter, and laser from the second beam combining module is emitted to the polarization beam splitter and is reflected by 90 degrees. And beam combination of the laser of the first beam combination module and the laser of the second beam combination module is completed. According to the three-wavelength laser beam combining device provided by the utility model, laser emitted by each semiconductor laser in the first beam combining module firstly enters the P-light polaroid and then enters the collimating mirror, and then enters the polarizing beam splitter through the dichroscope and penetrates through the polarizing beam splitter; laser emitted by each semiconductor laser in the second beam combining module firstly enters an S-light polaroid, then enters a collimating mirror, and then enters a polarization beam splitter through a dichroscope for 90-degree reflection, so that beam combination of the laser of the first beam combining module and the laser of the second beam combining module is completed, three-wavelength laser beam combination is realized, the overall structure is simple, the cost is low, and the laser beam combining device is suitable for large-scale popularization and application. The method is suitable for industrial use.

Description

Technical Field

[0001] The utility model relates to a semiconductor laser belonging to the technical field, and in particular to a three-wavelength laser beam combining device. Background Art

[0002] Semiconductor lasers have the advantages of small size, high efficiency, low cost, and high reliability, and are widely used in various fields of industry and life. However, semiconductor lasers are limited by the chip manufacturing process, and the output power of a single unit is low. With the demand for high-power and high-collimation lasers, laser beam combining technology has emerged.

[0003] The current laser beam combining technology is mainly based on coherent beam combining and incoherent beam combining. Incoherent beam combining technology includes spatial beam combining, polarization beam combining, wavelength beam combining, etc. In the beam combining system, the beam combining system will become complicated for the combination of multiple wavelengths. Therefore, how to simplify the structure of the multi-wavelength beam combining system and improve the sustainability and effectiveness of the system is of great significance for obtaining high-power and high-collimation laser beam combining devices. Utility Model Content

[0004] In order to solve the technical problems existing in the prior art, the purpose of the utility model is to provide a three-wavelength laser beam combining device.

[0005] In order to achieve the above purpose and the above technical effect, the technical solution adopted by the utility model is:

[0006] A three-wavelength laser beam combining device comprises a first beam combining module, a second beam combining module and a polarization beam splitter. The laser from the first beam combining module is incident on the polarization beam splitter and passes through. The laser from the second beam combining module is incident on the polarization beam splitter and reflects at 90 degrees, thereby completing the beam combining of the laser from the first beam combining module and the laser from the second beam combining module.

[0007] Furthermore, the first beam combining module includes a plurality of semiconductor laser modules, a first dichroic mirror and a second dichroic mirror, and the first dichroic mirror, the second dichroic mirror and the polarization beam splitter are sequentially arranged along the laser incident direction.

[0008] Furthermore, the first beam combining module includes three semiconductor laser modules, the first semiconductor laser module includes a first semiconductor laser, a first P-light polarizer, and a first collimator, the second semiconductor laser module includes a second semiconductor laser, a second P-light polarizer, and a second collimator, and the third semiconductor laser module includes a third semiconductor laser, a third P-light polarizer, and a third collimator. The first semiconductor laser, the first P-light polarizer, the first collimator, the first dichroic mirror, the second dichroic mirror, and the polarization beam splitter are arranged in sequence along the laser incident direction, the second semiconductor laser, the second P-light polarizer, and the second collimator are arranged in sequence along the laser incident direction, and the third semiconductor laser, the third P-light polarizer, and the third collimator are arranged in sequence along the laser incident direction.

[0009] Furthermore, the laser light generated by the first semiconductor laser is transmitted at the first dichroic mirror and passes through the second dichroic mirror; the laser light generated by the second semiconductor laser is reflected at the first dichroic mirror and passes through the second dichroic mirror; and the laser light generated by the third semiconductor laser is reflected at the second dichroic mirror.

[0010] Furthermore, the laser wavelength generated by the first semiconductor laser is 450 nm, the laser wavelength generated by the second semiconductor laser is 520 nm, and the laser wavelength generated by the third semiconductor laser is 650 nm.

[0011] Furthermore, the second beam combining module includes a plurality of semiconductor laser modules, a third dichroic mirror and a fourth dichroic mirror, and the third dichroic mirror, the fourth dichroic mirror and the polarization beam splitter are sequentially arranged along the laser incident direction.

[0012] Furthermore, the second beam combining module includes three semiconductor laser modules, the first semiconductor laser module includes a fourth semiconductor laser, a first S-light polarizer, and a fourth collimator, the second semiconductor laser module includes a fifth semiconductor laser, a second S-light polarizer, and a fifth collimator, the third semiconductor laser module includes a sixth semiconductor laser, a third S-light polarizer, and a sixth collimator, the fourth semiconductor laser, the first S-light polarizer, the fourth collimator, the third dichroic mirror, the fourth dichroic mirror, and the polarization beam splitter are arranged in sequence along the laser incident direction, the fifth semiconductor laser, the second S-light polarizer, and the fifth collimator are arranged in sequence along the laser incident direction, and the sixth semiconductor laser, the third S-light polarizer, and the sixth collimator are arranged in sequence along the laser incident direction.

[0013] Furthermore, the laser light generated by the fourth semiconductor laser is transmitted at the third dichroic mirror and passes through the fourth dichroic mirror; the laser light generated by the fifth semiconductor laser is reflected at the third dichroic mirror and passes through the fourth dichroic mirror; and the laser light generated by the sixth semiconductor laser is reflected at the fourth dichroic mirror.

[0014] Furthermore, the laser wavelength generated by the fourth semiconductor laser is 450 nm, the laser wavelength generated by the fifth semiconductor laser is 520 nm, and the laser wavelength generated by the sixth semiconductor laser is 650 nm.

[0015] Compared with the prior art, the beneficial effects of the utility model are:

[0016] The utility model discloses a three-wavelength laser beam combining device. The lasers emitted by each semiconductor laser in a first beam combining module first enter a P light polarizer and then a collimator, and then enter a polarization beam splitter through a dichroic mirror and pass through. The lasers emitted by each semiconductor laser in a second beam combining module first enter an S light polarizer and then a collimator, and then enter a polarization beam splitter through a dichroic mirror for 90° reflection, thereby completing the beam combining of the lasers of the first beam combining module and the lasers of the second beam combining module, realizing three-wavelength laser beam combining. The overall structure is simple, the conception is ingenious, the sustainability and effectiveness are high, the cost is low, and the device is suitable for industrial promotion and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the overall structure of the utility model. DETAILED DESCRIPTION

[0018] The present invention is described in detail below so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.

[0019] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or critical elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0020] Example 1

[0021] like Figure 1As shown, a three-wavelength laser beam combining device includes a first beam combining module 1, a second beam combining module 2, and a polarization beam splitter 14. The laser from the first beam combining module 1 is incident on the polarization beam splitter 14 and passes through, and the laser from the second beam combining module 2 is incident on the polarization beam splitter 14 for 90° reflection, thereby completing the beam combining of the laser from the first beam combining module 1 and the laser from the second beam combining module 2.

[0022] The first beam combining module 1 includes: a first semiconductor laser 3, a second semiconductor laser 4, a third semiconductor laser 5, a first P-light polarizer 6, a second P-light polarizer 7, a third P-light polarizer 8, a first collimator 9, a second collimator 10, a third collimator 11, a first dichroic mirror 12, and a second dichroic mirror 13. Among them, the first semiconductor laser 3, the first P-light polarizer 6, the first collimator 9, the first dichroic mirror 12, the second dichroic mirror 13, and the polarization beam splitter 14 are arranged in sequence along the laser incident direction; the second semiconductor laser 4, the second P-light polarizer 7, and the second collimator 10 are arranged in sequence along the laser incident direction; the third semiconductor laser 5, the third P-light polarizer 8, and the third collimator 11 are arranged in sequence along the laser incident direction. The laser light generated by the first semiconductor laser 3 is transmitted at the first dichroic mirror 12 and passes through the second dichroic mirror 13. The laser light generated by the second semiconductor laser 4 is reflected at the first dichroic mirror 12 and passes through the second dichroic mirror 13. The laser light generated by the third semiconductor laser 5 is reflected at the second dichroic mirror 13 .

[0023] The second beam combining module 2 includes: a fourth semiconductor laser 31, a fifth semiconductor laser 41, a sixth semiconductor laser 51, a first S-light polarizer 15, a second S-light polarizer 16, a third S-light polarizer 17, a fourth collimator 18, a fifth collimator 19, a sixth collimator 20, a third dichroic mirror 21, and a fourth dichroic mirror 22. The fourth semiconductor laser 31, the first S-light polarizer 15, the fourth collimator 18, the third dichroic mirror 21, and the fourth dichroic mirror 22 are sequentially arranged along the laser incident direction; the fifth semiconductor laser 41, the second S-light polarizer 16, and the fifth collimator 19 are sequentially arranged along the laser incident direction; the sixth semiconductor laser 51, the third S-light polarizer 17, and the sixth collimator 20 are sequentially arranged along the laser incident direction. The laser light generated by the fourth semiconductor laser 31 is transmitted at the third dichroic mirror 21 and passes through the fourth dichroic mirror 22. The laser light generated by the fifth semiconductor laser 41 is reflected by the third dichroic mirror 21 and is transmitted through the fourth dichroic mirror 22. The laser light generated by the sixth semiconductor laser 51 is reflected by the fourth dichroic mirror 22.

[0024] The working principle of the utility model is:

[0025] The first semiconductor laser 3 generates laser light with a wavelength of 450nm. The polarized light is P light after passing through the first P light polarizer 6, and then passes through the first collimator 9, and then transmits through the second dichroic mirror 13 at the first dichroic mirror 12; the second semiconductor laser 4 generates laser light with a wavelength of 520nm. The polarized light is P light after passing through the second P light polarizer 7, and then passes through the second collimator 10, and then is reflected at the first dichroic mirror 12 and transmitted through the second dichroic mirror 13; the third semiconductor laser 5 generates laser light with a wavelength of 650nm. The polarized light is P light after passing through the third P light polarizer 8, and then passes through the third collimator 11, and then is reflected at the second dichroic mirror 13, thereby completing the three-wavelength laser beam combining.

[0026] The fourth semiconductor laser 31 generates laser light with a wavelength of 450nm. The polarized light is S light after passing through the first S light polarizer 15, and then passes through the fourth collimator 18, and then transmits through the fourth dichroic mirror 22 at the third dichroic mirror 21; the fifth semiconductor laser 41 generates laser light with a wavelength of 520nm. The polarized light is S light after passing through the second S light polarizer 16, and then passes through the fifth collimator 19, and then is reflected at the third dichroic mirror 21 and transmitted through the fourth dichroic mirror 22; the sixth semiconductor laser 51 generates laser light with a wavelength of 650nm. The polarized light is S light after passing through the third S light polarizer 17, and then passes through the sixth collimator 20, and then is reflected at the fourth dichroic mirror 22, thereby completing the three-wavelength laser beam combination.

[0027] The combined laser beam of the first beam combining module 1 is incident on the polarization beam splitter 14 and passes through, and the combined laser beam of the second beam combining module 2 is incident on the polarization beam splitter 14 and reflects 90°, thereby completing the beam combining of the combined laser beams of the first beam combining module 1 and the second beam combining module 2 .

[0028] Parts or structures not specifically described in the present invention may adopt existing technologies or existing products and will not be described in detail here.

[0029] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A three-wavelength laser beam combining device, characterized in that: It includes a first beam combining module, a second beam combining module and a polarization beam splitter. The laser from the first beam combining module is incident on the polarization beam splitter and passes through. The laser from the second beam combining module is incident on the polarization beam splitter for 90° reflection, thereby completing the beam combining of the laser from the first beam combining module and the laser from the second beam combining module.

2. A three-wavelength laser beam combining device according to claim 1, characterized in that: The first beam combining module includes a plurality of semiconductor laser modules, a first dichroic mirror and a second dichroic mirror. The first dichroic mirror, the second dichroic mirror and a polarization beam splitter are sequentially arranged along the laser incident direction.

3. A three-wavelength laser beam combining device according to claim 2, characterized in that: The first beam combining module includes three semiconductor laser modules, the first semiconductor laser module includes a first semiconductor laser, a first P-light polarizer, and a first collimator, the second semiconductor laser module includes a second semiconductor laser, a second P-light polarizer, and a second collimator, and the third semiconductor laser module includes a third semiconductor laser, a third P-light polarizer, and a third collimator. The first semiconductor laser, the first P-light polarizer, the first collimator, the first dichroic mirror, the second dichroic mirror, and the polarization beam splitter are arranged in sequence along the laser incident direction, the second semiconductor laser, the second P-light polarizer, and the second collimator are arranged in sequence along the laser incident direction, and the third semiconductor laser, the third P-light polarizer, and the third collimator are arranged in sequence along the laser incident direction.

4. A three-wavelength laser beam combining device according to claim 3, characterized in that: The laser light generated by the first semiconductor laser is transmitted at the first dichroic mirror and passes through the second dichroic mirror; the laser light generated by the second semiconductor laser is reflected at the first dichroic mirror and passes through the second dichroic mirror; The laser light generated by the third semiconductor laser is reflected at the second dichroic mirror.

5. A three-wavelength laser beam combining device according to claim 4, characterized in that: The laser wavelength generated by the first semiconductor laser is 450 nm, the laser wavelength generated by the second semiconductor laser is 520 nm, and the laser wavelength generated by the third semiconductor laser is 650 nm.

6. A three-wavelength laser beam combining device according to claim 1, characterized in that: The second beam combining module includes a plurality of semiconductor laser modules, a third dichroic mirror and a fourth dichroic mirror. The third dichroic mirror, the fourth dichroic mirror and the polarization beam splitter are sequentially arranged along the laser incident direction.

7. A three-wavelength laser beam combining device according to claim 6, characterized in that: The second beam combining module includes three semiconductor laser modules, the first semiconductor laser module includes a fourth semiconductor laser, a first S light polarizer, and a fourth collimator, the second semiconductor laser module includes a fifth semiconductor laser, a second S light polarizer, and a fifth collimator, the third semiconductor laser module includes a sixth semiconductor laser, a third S light polarizer, and a sixth collimator, the fourth semiconductor laser, the first S light polarizer, the fourth collimator, the third dichroic mirror, the fourth dichroic mirror, and the polarization beam splitter are arranged in sequence along the laser incident direction, the fifth semiconductor laser, the second S light polarizer, and the fifth collimator are arranged in sequence along the laser incident direction, and the sixth semiconductor laser, the third S light polarizer, and the sixth collimator are arranged in sequence along the laser incident direction.

8. A three-wavelength laser beam combining device according to claim 7, characterized in that: The laser light generated by the fourth semiconductor laser is transmitted at the third dichroic mirror and passes through the fourth dichroic mirror; the laser light generated by the fifth semiconductor laser is reflected at the third dichroic mirror and passes through the fourth dichroic mirror; The laser light generated by the sixth semiconductor laser is reflected at the fourth dichroic mirror.

9. A three-wavelength laser beam combining device according to claim 8, characterized in that: The laser wavelength generated by the fourth semiconductor laser is 450 nm, the laser wavelength generated by the fifth semiconductor laser is 520 nm, and the laser wavelength generated by the sixth semiconductor laser is 650 nm.

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