Passive driving power module

Abstract

In order to solve the problem of secondary opening in the existing power module, the utility model provides a passive driving power module, which comprises a power tube, a resistor, a diode and a triode, wherein the cathode of the diode FRD1 is connected with the collector of the power tube IGBT1, and the anode of the diode FRD1 is connected with the emitter of the power tube IGBT1; the grid electrode of the power tube IGBT1 is connected with one end of the resistor Rg1, and the other end of the resistor Rg1 is connected with the external input of the module. The grid electrode of the power tube IGBT1 is connected with the emitter electrode of the triode Q1B, the collector electrode of the triode Q1B is connected with the emitter electrode of the power tube IGBT1, and the base electrode of the triode Q1B is connected with the anode of the diode D1; the cathode of the diode D1 is connected with the module input LG; by arranging a triode Q1B and related circuits, the problem of secondary opening of the grid electrode of the power tube caused by too high high-frequency input impedance is solved, the dead time can be reduced, the overall switching speed and switching frequency are improved, the loss of the overall circuit is reduced, and the module efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of power tube driving, in particular to a passive driving power module. Background Art

[0002] In conventional power modules, the power tube switch is usually controlled by turning on and off the power tube gate, such as the content shown in the patent with the authorization announcement number CN116780887A, in which the power tube includes IGBT, MOS tube, SCR tube, etc. However, during the switching process of the power tube, due to the Miller effect of the IGBT, the FRD fast recovery characteristics in the circuit, the parasitic inductance and capacitance in the circuit combination, the power tube generates voltage interference and current interference when it is turned on and off, and also generates turn-on loss and turn-off loss.

[0003] On the other hand, the product size is getting smaller and smaller, the energy density is getting higher and higher, and the operating frequency needs to be higher. Then the switching speed must also be faster. Since the current IGBT module drivers are all external, the drive unit is outside the module, and the drive path is too long, the switching speed cannot be further improved; secondly, the drive path is too long, which increases the gate impedance. When the IGBT collector dv / dt is too large, it causes the IGBT to turn on again, and the upper and lower bridges are directly connected, burning the power components. Therefore, there is an urgent need for a module drive circuit that can solve the reliability of the IGBT module, increase the switching speed, reduce losses, improve efficiency, reduce EMI, and ensure stable and reliable operation. Summary of the invention

[0004] The purpose of the utility model is to solve the deficiencies of the prior art and provide a passive drive power module.

[0005] In order to solve the above problems, the utility model adopts the following solutions:

[0006] A passive drive power module includes a power tube; a resistor, a diode and a triode; the power tube includes IGBT1, the diode includes D1 and FRD1, the triode includes Q1B, and the resistor includes Rg1; wherein the cathode of the diode FRD1 is connected to the collector of the power tube IGBT1, and the anode of the diode FRD1 is connected to the emitter of the power tube IGBT1; the gate of the power tube IGBT1 is respectively connected to one end of the resistor Rg1, and the other end of the resistor Rg1 is connected to the external input of the module; the gate of the power tube IGBT1 is connected to the emitter of the triode Q1B, the collector of the triode Q1B is connected to the emitter of the power tube IGBT1, and the base of the triode Q1B is connected to the anode of the diode D1; the cathode of the diode D1 is connected to the module input LG.

[0007] Furthermore, the transistor also includes Q1A, the resistor also includes R1, the diode also includes D2, and the capacitor includes C1; the collector of the transistor Q1A is connected to the gate of the power tube IGBT1 and one end of the resistor Rg1; the other end of the resistor Rg1 is connected to the emitter of the transistor Q1A; the base of the transistor Q1A is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the anode of the diode D2, and the cathode of the diode D2 is connected to the collector of the power tube IGBT1; one end of the capacitor C1 is connected to the base of the transistor Q1A, and the other end of the capacitor C1 is connected to the emitter of the transistor Q1A.

[0008] Furthermore, it also includes an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit are connected, and the power tube IGBT1 is arranged in the lower bridge circuit; the upper bridge circuit includes a power tube IGBT2, transistors Q2A and Q2B, resistors R3 and Rg2, diodes D3, D4 and FRD2, and capacitor C2; wherein the collector of the power tube IGBT1 in the lower bridge circuit is connected to the emitter of the power tube IGBT2 in the upper bridge circuit; the cathode of the diode FRD2 is connected to the collector of the power tube IGBT2, and the anode of the diode FRD2 is connected to the emitter of the power tube IGBT2; the gate of the power tube IGBT2 is respectively connected to one end of the resistor Rg2 and the collector of the transistor Q2A The other end of the resistor Rg2 is connected to the emitter of the transistor Q2A and connected to the module input HG; the base of the transistor Q2A is connected to one end of the resistor R3, the other end of the resistor R3 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the collector of the power tube IGBT2; one end of the capacitor C2 is connected to the base of the transistor Q2A, and the other end of the capacitor C2 is connected to the emitter of the transistor Q2A; the gate of the power tube IGBT2 is also connected to the emitter of the transistor Q2B, the collector of the transistor Q2B is connected to the emitter of the power tube IGBT2, and the base of the transistor Q2B is connected to the anode of the diode D3; the cathode of the diode D3 is connected to the module input HG.

[0009] Furthermore, the resistor also includes R2, and the resistor R2 is arranged between the gate and the emitter of the power tube IGBT1.

[0010] Furthermore, the resistor of the upper bridge circuit also includes R4, and the resistor R4 is arranged between the gate and the emitter of the power tube IGBT2.

[0011] The beneficial effects of the utility model are:

[0012] By setting up the transistor Q1B and related circuits, the secondary opening problem of the gate of the power tube caused by the high high-frequency input impedance is eliminated, and the dead time can be reduced, the overall switching speed and switching frequency can be increased, the loss of the overall circuit can be reduced, and the module efficiency can be improved;

[0013] By setting the corresponding transistor Q1A and related circuits for the power tube, the saturation loss of the power tube element when it is turned on is reduced, the third stage time of the turn-on is reduced, and the second stage time of the Miller platform is increased, which helps to reduce the peak interference generated during the turn-on process and reduce the EMI amplitude of the overall circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of an existing IGBT power module driving signal analysis;

[0015] Figure 2 A schematic diagram of the relationship between an existing IGBT power module gate input drive voltage and the module internal IGBT gate voltage waveform;

[0016] Figure 3 The circuit diagram of the transistor Q1B and related components of Example 1;

[0017] Figure 4 The circuit diagram of transistors Q1A, Q1A and related components of Example 1;

[0018] Figure 5 A schematic diagram of the connection between an upper bridge circuit and a lower bridge circuit in Example 1;

[0019] Figure 6 This is another schematic diagram of connecting an upper bridge circuit and a lower bridge circuit in Example 1;

[0020] Figure 7 for Figure 6 Schematic diagram of the relationship between the IGBT power module gate input drive voltage and the module's internal IGBT gate voltage waveform. DETAILED DESCRIPTION

[0021] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0022] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and the figures only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0023] Embodiment 1:

[0024] A passive drive power module includes a power tube; a resistor, a diode and a triode; the power tube includes IGBT1, the diode includes D1 and FRD1, the triode includes Q1B, and the resistor includes Rg1; wherein the cathode of the diode FRD1 is connected to the collector of the power tube IGBT1, and the anode of the diode FRD1 is connected to the emitter of the power tube IGBT1; the gate of the power tube IGBT1 is respectively connected to one end of the resistor Rg1, and the other end of the resistor Rg1 is connected to the external input of the module; the gate of the power tube IGBT1 is connected to the emitter of the triode Q1B, the collector of the triode Q1B is connected to the emitter of the power tube IGBT1, and the base of the triode Q1B is connected to the anode of the diode D1; the cathode of the diode D1 is connected to the module input LG. It should be noted that in this embodiment, the power tube adopts IGBT transistors. In some other implementations, other power tubes, such as MOS tubes, etc., can also be adopted. In addition, the power module in this embodiment can replace the power tube components in the traditional power module 1:1, such as replacing the IGBT transistor with the above power module, using the emitter of the power tube IGBT1 in this embodiment as the emitter of the overall passive drive module, the collector of the power tube IGBT1 as the collector of the overall passive drive module, and the end of the resistor Rg1 away from the power tube IGBT1 as the gate of the overall passive drive module. In the implementation process, the transistor Q1B serves as the voltage drop channel of the gate of the power tube IGBT1, and D1 serves to shield the charging of the power tube gate in the wrong time period caused by the reverse breakdown voltage of Q1B-be being only 6V.

[0025] The transistor also includes Q1A, the resistor also includes R1, the diode also includes D2, and the capacitor includes C1; the collector of the transistor Q1A is connected to the gate of the power tube IGBT1 and one end of the resistor Rg1; the other end of the resistor Rg1 is connected to the emitter of the transistor Q1A; the base of the transistor Q1A is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the anode of the diode D2, and the cathode of the diode D2 is connected to the collector of the power tube IGBT1; one end of the capacitor C1 is connected to the base of the transistor Q1A, and the other end of the capacitor C1 is connected to the emitter of the transistor Q1A. In this example, the transistor Q1A serves as the third stage rising channel of the turn-on voltage of the gate of the power tube IGBT1, and the capacitor C1 is used to offset the interference caused by the reverse recovery characteristics of the diode D1.

[0026] It also includes an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit are connected, and the power tube IGBT1 is arranged in the lower bridge circuit; the upper bridge circuit includes a power tube IGBT2, transistors Q2A and Q2B, resistors R3 and Rg2, diodes D3, D4 and FRD2, and capacitor C2; wherein the collector of the power tube IGBT1 in the lower bridge circuit is connected to the emitter of the power tube IGBT2 in the upper bridge circuit; the cathode of the diode FRD2 is connected to the collector of the power tube IGBT2, and the anode of the diode FRD2 is connected to the emitter of the power tube IGBT2; the gate of the power tube IGBT2 is respectively connected to one end of the resistor Rg2 and the collector of the transistor Q2A ; The other end of the resistor Rg2 is connected to the emitter of the transistor Q2A and the module input HG; the base of the transistor Q2A is connected to one end of the resistor R3, the other end of the resistor R3 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the collector of the power tube IGBT2; one end of the capacitor C2 is connected to the base of the transistor Q2A, and the other end of the capacitor C2 is connected to the emitter of the transistor Q2A; the gate of the power tube IGBT2 is also connected to the emitter of the transistor Q2B, the collector of the transistor Q2B is connected to the emitter of the power tube IGBT2, and the base of the transistor Q2B is connected to the anode of the diode D3; the cathode of the diode D3 is connected to the module input HG.

[0027] In the process of turning off the power tube IGBT1, the emitter of the transistor Q1B is connected to the gate of the power tube IGBT1, and the collector of the transistor Q1B is connected to the collector of the power tube IGBT1, forming the shortest path for turning off the power tube IGBT1 and discharging. When the module input gate LG is at a low level, the voltage of the gate of the power tube IGBT1 flows through the EB junction of the transistor Q1B and the diode D1, and the emitter and collector of the transistor Q1B are saturated and turned on, and the voltage of the gate of the power tube IGBT1 is quickly discharged, so that the power tube IGBT1 is turned off. Figure 7 The time period from t4 to t5 in the figure; compared with the gate voltage change of the existing MOS / IGBT tube during the turn-on process, the discharge voltage of the gate voltage of the power tube in this embodiment is more stable and faster, and the parasitic inductance in the power tube of the lower bridge circuit is charged with the high-speed signal generated by the upper bridge conduction, resulting in the problem that the power tube of the lower bridge circuit is turned on again when it should not be turned on, wherein the gate voltage of the power tube in the lower bridge circuit will be quickly discharged through the transistor Q1B.

[0028] In the process of turning on the power tube IGBT1, when the module pin gate LG input is high level, the LG voltage charges the gate of the power tube IGBT1 through the resistor Rg1. Figure 7The time period t0~t2; when the gate of the power tube IGBT1 is charged to the turn-on voltage, the time period t0~t1, the emitter and collector of the power tube IGBT1 are initially turned on, and after entering the Miller platform t1~t2, the voltage of the collector of the power tube IGBT1 is reduced to 0V or close to 0V at the end of Miller. At this time, the module gate LG voltage passes through the EB junction of the transistor Q1A, the resistor R1, the diode D2, the collector of the power tube IGBT1, and the emitter of the IGBT; the emitter and collector of the transistor Q1A are saturated and turned on, and then the voltage between the gate and emitter of the power tube IGBT1 rises rapidly, completing the corresponding opening of the power tube IGBT1. Figure 7 The time period t2 to t3; compared with the gate voltage change during the turn-on process of the existing MOS / IGBT tube, the gate voltage of the power tube of this embodiment is more stable when turned on and takes less time.

[0029] The resistor also includes R2, which is arranged between the gate and emitter of the power tube IGBT1; the resistor of the upper bridge circuit also includes R4, which is arranged between the gate and emitter of the power tube IGBT2; the resistor R2 and the resistor R4 are respectively used to release the static electricity of the gates of the power tubes IGBT1 and IGBT2.

[0030] During the implementation process, the power module constructs a passive drive technology according to the working principle, which can achieve minimum peak interference (EMI) and reduce the risk of secondary opening during operation, thereby improving the reliability and efficiency of application products such as servo motors, energy storage inverters, high-frequency welding machines and other equipment during operation.

[0031] It is only a specific example of the utility model and does not constitute any limitation to the utility model. Obviously, after understanding the content and principle of the utility model, professionals in this field may make various modifications and changes in form and details without departing from the principle and structure of the utility model, but these modifications and changes based on the idea of ​​the utility model are still within the scope of protection of the claims of the utility model.

Claims

1. A passive drive power module, comprising a power tube; characterized in that: It also includes resistors, diodes and triodes; the power tube includes IGBT1, the diodes include D1 and FRD1, the triode includes Q1B, and the resistor includes Rg1; wherein the cathode of the diode FRD1 is connected to the collector of the power tube IGBT1, and the anode of the diode FRD1 is connected to the emitter of the power tube IGBT1; the gate of the power tube IGBT1 is respectively connected to one end of the resistor Rg1, and the other end of the resistor Rg1 is connected to the external input of the module; the gate of the power tube IGBT1 is connected to the emitter of the triode Q1B, the collector of the triode Q1B is connected to the emitter of the power tube IGBT1, and the base of the triode Q1B is connected to the anode of the diode D1; the cathode of the diode D1 is connected to the module input LG.

2. A passive driving power module according to claim 1, characterized in that: The transistor also includes Q1A, the resistor also includes R1, the diode also includes D2, and the capacitor includes C1; the collector of the transistor Q1A is connected to the gate of the power tube IGBT1 and one end of the resistor Rg1; the other end of the resistor Rg1 is connected to the emitter of the transistor Q1A; The base of the transistor Q1A is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the collector of the power tube IGBT1; one end of the capacitor C1 is connected to the base of the transistor Q1A, and the other end of the capacitor C1 is connected to the emitter of the transistor Q1A.

3. A passive drive power module according to any one of claims 1 to 2, characterized in that: It also includes an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit are connected, and the power tube IGBT1 is arranged in the lower bridge circuit; the upper bridge circuit includes a power tube IGBT2, transistors Q2A and Q2B, resistors R3 and Rg2, diodes D3, D4 and FRD2, and capacitor C2; wherein the collector of the power tube IGBT1 in the lower bridge circuit is connected to the emitter of the power tube IGBT2 in the upper bridge circuit; the cathode of the diode FRD2 is connected to the collector of the power tube IGBT2, and the anode of the diode FRD2 is connected to the emitter of the power tube IGBT2; the gate of the power tube IGBT2 is respectively connected to one end of the resistor Rg2 and the collector of the transistor Q2A ; The other end of the resistor Rg2 is connected to the emitter of the transistor Q2A and the module input HG; the base of the transistor Q2A is connected to one end of the resistor R3, the other end of the resistor R3 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the collector of the power tube IGBT2; one end of the capacitor C2 is connected to the base of the transistor Q2A, and the other end of the capacitor C2 is connected to the emitter of the transistor Q2A; the gate of the power tube IGBT2 is also connected to the emitter of the transistor Q2B, the collector of the transistor Q2B is connected to the emitter of the power tube IGBT2, and the base of the transistor Q2B is connected to the anode of the diode D3; the cathode of the diode D3 is connected to the module input HG.

4. A passive driving power module according to claim 3, characterized in that: The resistor also includes R2, and the resistor R2 is arranged between the gate and the emitter of the power tube IGBT1.

5. A passive driving power module according to claim 4, characterized in that: The resistor of the upper bridge circuit also includes R4, and the resistor R4 is arranged between the gate and the emitter of the power tube IGBT2.

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