Guide cylinder structure of silicon single crystal growth furnace

Abstract

The utility model discloses a guide cylinder structure of a silicon single crystal growth furnace, which belongs to the technical field of silicon single crystal growth furnaces, and comprises a protective shell, the bottom of the inner side of the protective shell is movably connected with a crucible body, and the inner wall of the protective shell is movably connected with a sealing block. A guide cylinder assembly is movably connected to the inner wall of the sealing block, the bottom of the stabilizing block is connected with the top of the sealing block in an inserted mode, the top of the stabilizing block is connected with the bottom of a large guide cylinder in an inserted mode, the bottom of the large guide cylinder is made to be attached to the top of the stabilizing block, and finally an existing heater is used for heating the crucible body. When a user needs to manufacture monocrystalline silicon rods with different diameters, the user can place the middle guide cylinder on the inner wall of the large guide cylinder by using a tool, namely, the small guide cylinder can also be placed on the inner wall of the middle guide cylinder so as to be matched with the manufacturing of the monocrystalline silicon rods.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon single crystal growth furnaces, in particular to a guide tube structure of a silicon single crystal growth furnace. Background Art

[0002] The silicon single crystal growth furnace is a key equipment for growing silicon single crystals, which is usually used to produce silicon wafers in the semiconductor industry. Its working principle is based on cooling the silicon melt under appropriate conditions at high temperature so that it gradually crystallizes into a single large silicon crystal. These silicon single crystals have high purity and uniform crystal structure, which are very important because they are the basic materials for manufacturing semiconductor devices such as chips.

[0003] The patent document with publication number CN220284286U discloses a silicon single crystal growth furnace, including a furnace barrel, a silicon single crystal growth furnace cover is installed on the upper surface of the furnace barrel, an annular sealing plate is fixedly installed on the inner wall of the silicon single crystal growth furnace cover, an annular sealing gasket is fixedly installed on the bottom surface of the annular sealing plate, and an insulation barrel is fixedly installed on the inner wall of the furnace barrel, and the bottom surface of the annular sealing gasket contacts the upper surface of the insulation barrel. The device arranges an annular sealing gasket on the bottom surface of the annular sealing plate so that the gap between the silicon single crystal growth furnace cover and the furnace barrel can be sealed, thereby effectively reducing the leakage of high-purity argon and heat from the gap to the outside, and arranges a heat reflecting plate inside the insulation barrel to effectively reduce the loss of heat. The device effectively solves the problem that in the production process of the existing silicon single crystal growth furnace, there is a certain degree of waste of thermal power and high-purity argon, thereby leading to increased production costs.

[0004] A guide tube is a device used to guide the flow direction of fluid or gas, usually composed of a tubular structure, which protects the single crystal silicon rod from medium erosion. The guide tube forms an internal and external temperature gradient, making it easier to form crystal nuclei during the crystal pulling process. It is widely used in industrial and scientific applications. The guide tube of an existing silicon single crystal growth furnace is generally an integrated molding structure. When the user needs to make single crystal silicon rods of different diameters, it is necessary to wait for the guide tube to cool down and replace it, which is more troublesome to use. Utility Model Content

[0005] The utility model provides a guide tube structure for a silicon single crystal growth furnace, aiming to solve the problem that the guide tube of the existing silicon single crystal growth furnace is generally an integrated structure. When the user needs to make single crystal silicon rods of different diameters, it is necessary to wait for the guide tube to cool down and replace it, which is more troublesome to use, thus affecting the use effect of the guide tube.

[0006] The utility model is implemented as follows: a guide tube structure of a silicon single crystal growth furnace comprises a protective shell, the bottom of the inner side of the protective shell is movably connected to a crucible body, the inner wall of the protective shell is movably connected to a sealing block, the inner wall of the sealing block is movably connected to a guide tube assembly, and the bottom of the guide tube assembly is movably connected to the top of the crucible body;

[0007] The guide tube assembly includes a stabilizing block, a large guide tube, a middle guide tube and a small guide tube. The bottom of the stabilizing block is plugged into the top of the sealing block, the top of the stabilizing block is plugged into the bottom of the large guide tube, the inner wall of the large guide tube is plugged into the outer wall of the middle guide tube, the inner wall of the middle guide tube is plugged into the outer wall of the small guide tube, and the bottom of the large guide tube is movably connected to the top of the crucible body.

[0008] In order to achieve the effect of making the stabilizing block fit tightly with the large guide tube, as a preferred structure of the guide tube of a silicon single crystal growth furnace of the utility model, a placement groove is opened on the top of the stabilizing block, and a plug-in block is fixedly connected to the bottom of the large guide tube, and the outer side of the plug-in block is plugged into the inner side of the placement groove.

[0009] In order to achieve the effect that the middle flow guide tube can be stably placed on the inner wall of the large flow guide tube, as a preferred flow guide tube structure of a silicon single crystal growth furnace of the utility model, the inner wall of the large flow guide tube is fixedly connected to a support plate, and the top of the support plate is movably connected to the bottom of the middle flow guide tube.

[0010] In order to achieve the effect that the small guide tube can be placed on the inner wall of the stabilizing disk, as a preferred guide tube structure of a silicon single crystal growth furnace of the utility model, the inner wall of the middle guide tube is fixedly connected with the stabilizing disk, and the top of the stabilizing disk is movably connected to the bottom of the small guide tube.

[0011] In order to achieve the effect of forming a channel for the growth of single crystal silicon, as a preferred structure of a guide tube for a silicon single crystal growth furnace of the utility model, the bottom of the stabilizing plate, the bottom of the middle guide tube and the bottom of the small guide tube are all provided with anti-slip patterns, and the large guide tube, the middle guide tube and the small guide tube are all connected.

[0012] In order to achieve the effect that the sealing block can be placed on the inner wall of the protective shell, as a preferred guide tube structure of a silicon single crystal growth furnace of the utility model, the inner wall of the protective shell is fixedly connected with an annular block, and the top of the annular block is movably connected to the top of the sealing block.

[0013] In order to achieve the effect that the stabilizing block can be placed on the inner side of the sealing block, as a preferred structure of a guide tube for a silicon single crystal growth furnace of the utility model, a mounting groove is opened on the top of the sealing block, and the inner wall of the mounting groove is movably connected to the outer wall of the stabilizing block, and the inner wall of the mounting groove is movably connected to the outer wall of the large guide tube.

[0014] In order to increase the tightness of the connection between the large guide tube and the stabilizing block, as a preferred structure of the guide tube of a silicon single crystal growth furnace of the utility model, the number of the placement grooves is several and evenly distributed on the top of the stabilizing block, and the number of the plug-in blocks is several and evenly distributed on the bottom of the large guide tube.

[0015] Compared with the prior art, the beneficial effects of the utility model are:

[0016] The guide tube structure of the silicon single crystal growth furnace is provided with a protective shell, a crucible body, a sealing block and a guide tube assembly. When the user needs to manufacture single crystal silicon rods, first, the user adds raw materials into the crucible body, and then the user places the sealing block on the inner wall of the protective shell to semi-close the top of the protective shell, and then places the stabilizing block on the inner wall of the sealing block. Thereafter, the user takes the large guide tube and places it on the stabilizing block so that the bottom of the large guide tube is at the top of the stabilizing block and fits. Finally, the crucible body is heated by an existing heater to melt the material added into the crucible body. When the user needs to make single crystal silicon rods of different diameters, the user can use a tool to place the middle guide tube on the inner wall of the large guide tube, that is, the small guide tube can also be placed on the inner wall of the middle guide tube to cooperate with the manufacture of single crystal silicon rods. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is an overall structural diagram of the guide tube structure of the silicon single crystal growth furnace of the utility model;

[0018] Figure 2 This is a disassembled diagram of the guide tube assembly in the utility model;

[0019] Figure 3 This is a cutout diagram of the partial structural connection of the guide tube assembly in the utility model;

[0020] Figure 4 This is a cutout diagram of the connection portion of the protective shell in the utility model;

[0021] Figure 5 This is a disassembled diagram of the sealing block and the protective shell in the utility model.

[0022] In the figure, 1, protective shell; 2, crucible body; 3, sealing block; 4, guide tube assembly; 401, stabilizing block; 402, large guide tube; 403, medium guide tube; 404, small guide tube; 5, placement groove; 6, plug-in block; 7, support plate; 8, stabilizing plate; 9, ring block; 10, installation groove. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0024] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, in the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0025] See also Figure 1-5 The utility model provides a technical solution: a guide tube structure of a silicon single crystal growth furnace, comprising a protective shell 1, the bottom of the inner side of the protective shell 1 is movably connected to a crucible body 2, the inner wall of the protective shell 1 is movably connected to a sealing block 3, the inner wall of the sealing block 3 is movably connected to a guide tube assembly 4, and the bottom of the guide tube assembly 4 is movably connected to the top of the crucible body 2;

[0026] The guide tube assembly 4 includes a stabilizing block 401, a large guide tube 402, a middle guide tube 403 and a small guide tube 404. The bottom of the stabilizing block 401 is plugged into the top of the sealing block 3, the top of the stabilizing block 401 is plugged into the bottom of the large guide tube 402, the inner wall of the large guide tube 402 is plugged into the outer wall of the middle guide tube 403, the inner wall of the middle guide tube 403 is plugged into the outer wall of the small guide tube 404, and the bottom of the large guide tube 402 is movably connected to the top of the crucible body 2.

[0027] In this embodiment: by setting the protective shell 1, the crucible body 2, the sealing block 3 and the guide tube assembly 4, when the user needs to manufacture single crystal silicon rods, first, the user adds the raw materials into the crucible body 2, and then the user places the sealing block 3 on the inner wall of the protective shell 1 to semi-close the top of the protective shell 1, and then places the stabilizing block 401 on the inner wall of the sealing block 3, and then the user takes the large guide tube 402 and places it on the stabilizing block 401, so that the bottom of the large guide tube 402 fits on the top of the stabilizing block 401, and finally, the crucible body 2 is heated by the existing heater to melt the material added into the crucible body 2, and when the user needs to make single crystal silicon rods of different diameters, the user can use tools to place the middle guide tube 403 on the inner wall of the large guide tube 402, that is, the small guide tube 404 can also be placed on the inner wall of the middle guide tube 403, so as to cooperate with the manufacture of single crystal silicon rods.

[0028] As a technical optimization solution of the utility model, a placement groove 5 is opened on the top of the stabilizing block 401 , and a plug-in block 6 is fixedly connected to the bottom of the large guide tube 402 , and the outer side of the plug-in block 6 is plugged into the inner side of the placement groove 5 .

[0029] In this embodiment, the placement groove 5 provided in the stabilizing block 401 and the plug-in block 6 fixed to the large flow guide tube 402 are used to make the stabilizing block 401 fit tightly with the large flow guide tube 402 .

[0030] As a technical optimization solution of the present invention, the inner wall of the large guide tube 402 is fixedly connected with a support plate 7 , and the top of the support plate 7 is movably connected to the bottom of the middle guide tube 403 .

[0031] In this embodiment, by providing a support plate 7 fixed to the inner wall of the large flow guide tube 402 , the middle flow guide tube 403 can be stably placed on the inner wall of the large flow guide tube 402 .

[0032] As a technical optimization solution of the present invention, the inner wall of the middle guide tube 403 is fixedly connected with a stabilizing plate 8 , and the top of the stabilizing plate 8 is movably connected to the bottom of the small guide tube 404 .

[0033] In this embodiment, a stabilizing plate 8 is provided to be fixed to the inner wall of the middle guide tube 403 , so that the small guide tube 404 can be placed on the inner wall of the stabilizing plate 8 .

[0034] As a technical optimization solution of the utility model, the bottom of the stabilizing plate 8, the bottom of the middle guide tube 403 and the bottom of the small guide tube 404 are all provided with anti-slip grooves, and the large guide tube 402, the middle guide tube 403 and the small guide tube 404 are all connected.

[0035] In this embodiment: by providing anti-skid lines on the bottom of the above structure, the stability of the placement of the stabilizing plate 8, the middle guide tube 403 and the small guide tube 404 is ensured, and by providing connections between the above components, a channel for the growth of single crystal silicon is formed.

[0036] As a technical optimization solution of the utility model, an annular block 9 is fixedly connected to the inner wall of the protective shell 1 , and the top of the annular block 9 is movably connected to the top of the sealing block 3 .

[0037] In this embodiment, an annular block 9 fixed to the inner wall of the protective shell 1 is provided so that the sealing block 3 can be placed on the inner wall of the protective shell 1 .

[0038] As a technical optimization solution of the utility model, a mounting groove 10 is opened on the top of the sealing block 3, and the inner wall of the mounting groove 10 is movably connected to the outer wall of the stabilizing block 401, and the inner wall of the mounting groove 10 is movably connected to the outer wall of the large guide tube 402.

[0039] In this embodiment, the installation groove 10 is provided on the top of the sealing block 3 , so that the stabilizing block 401 can be placed on the inner side of the sealing block 3 , and the guide tube assembly 4 can be installed on the top of the stabilizing block 401 .

[0040] As a technical optimization solution of the present invention, the number of placement grooves 5 is several and evenly distributed on the top of the stabilizing block 401 , and the number of plug-in blocks 6 is several and evenly distributed on the bottom of the large guide tube 402 .

[0041] In this embodiment, a plurality of placement grooves 5 are provided on the top of the stabilizing block 401 and a plurality of plug-in blocks 6 are fixed on the bottom of the large guide tube 402 to increase the tightness of the connection between the large guide tube 402 and the stabilizing block 401 .

[0042] Working principle: First, when the user needs to manufacture single crystal silicon rods, the user adds raw materials into the crucible body 2, and then the user places the sealing block 3 on the inner wall of the protective shell 1 to semi-close the top of the protective shell 1, and then places the stabilizing block 401 on the inner wall of the sealing block 3. After that, the user takes the large flow guide tube 402 and places it on the stabilizing block 401, so that the bottom of the large flow guide tube 402 is at the top of the stabilizing block 401 and fits together. Finally, the crucible body 2 is heated by the existing heater to melt the material added into the crucible body 2. When the user needs to make single crystal silicon rods of different diameters, the user can use tools to place the middle flow guide tube 403 on the inner wall of the large flow guide tube 402, that is, the small flow guide tube 404 can also be placed on the inner wall of the middle flow guide tube 403 to cooperate with the manufacture of single crystal silicon rods. All the components described above are made of high temperature resistant materials commonly used in this field.

[0043] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A guide tube structure for a silicon single crystal growth furnace, comprising a protective shell (1), characterized in that: The bottom of the inner side of the protective shell (1) is movably connected to the crucible body (2), the inner wall of the protective shell (1) is movably connected to a sealing block (3), the inner wall of the sealing block (3) is movably connected to a guide tube assembly (4), and the bottom of the guide tube assembly (4) is movably connected to the top of the crucible body (2); The flow guide tube assembly (4) comprises a stabilizing block (401), a large flow guide tube (402), a middle flow guide tube (403) and a small flow guide tube (404); the bottom of the stabilizing block (401) is plugged into the top of the sealing block (3); the top of the stabilizing block (401) is plugged into the bottom of the large flow guide tube (402); the inner wall of the large flow guide tube (402) is plugged into the outer wall of the middle flow guide tube (403); the inner wall of the middle flow guide tube (403) is plugged into the outer wall of the small flow guide tube (404); and the bottom of the large flow guide tube (402) is movably connected to the top of the crucible body (2).

2. The guide tube structure of a silicon single crystal growth furnace according to claim 1, characterized in that: The top of the stabilizing block (401) is provided with a placement groove (5), and the bottom of the large guide tube (402) is fixedly connected with a plug-in block (6), and the outer side of the plug-in block (6) is plugged into the inner side of the placement groove (5).

3. The guide tube structure of a silicon single crystal growth furnace according to claim 1, characterized in that: The inner wall of the large flow guide tube (402) is fixedly connected to a support plate (7), and the top of the support plate (7) is movably connected to the bottom of the middle flow guide tube (403).

4. The guide tube structure of a silicon single crystal growth furnace according to claim 1, characterized in that: The inner wall of the middle guide tube (403) is fixedly connected with a stabilizing plate (8), and the top of the stabilizing plate (8) is movably connected to the bottom of the small guide tube (404).

5. The guide tube structure of a silicon single crystal growth furnace according to claim 4, characterized in that: The bottom of the stabilizing plate (8), the bottom of the middle flow guide tube (403) and the bottom of the small flow guide tube (404) are all provided with anti-slip patterns, and the large flow guide tube (402), the middle flow guide tube (403) and the small flow guide tube (404) are all connected.

6. The guide tube structure of a silicon single crystal growth furnace according to claim 1, characterized in that: An annular block (9) is fixedly connected to the inner wall of the protective shell (1), and the top of the annular block (9) is movably connected to the top of the sealing block (3).

7. The guide tube structure of a silicon single crystal growth furnace according to claim 1, characterized in that: The top of the sealing block (3) is provided with a mounting groove (10), the inner wall of the mounting groove (10) is movably connected to the outer wall of the stabilizing block (401), and the inner wall of the mounting groove (10) is movably connected to the outer wall of the large guide tube (402).

8. The guide tube structure of a silicon single crystal growth furnace according to claim 2, characterized in that: The number of the placement grooves (5) is several and evenly distributed on the top of the stabilizing block (401), and the number of the plug-in blocks (6) is several and evenly distributed on the bottom of the large guide tube (402).

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