Crystal growth equipment

Abstract

The embodiment of the utility model provides crystal growth equipment. The crystal growth equipment comprises a crucible, a growth assembly, a driving assembly and a compensation assembly, the crucible is used for containing melt needed by crystal growth. The growth assembly is used for mounting seed crystals and is connected with the driving assembly. The driving assembly is used for driving the growth assembly to move between a first position and a second position in the axial direction of the growth assembly. The first position is the lowest point in the axial direction of the growth assembly when the growth assembly moves in the axial direction of the growth assembly, and the second position is the other position except the first position in the axial direction of the growth assembly when the growth assembly moves in the axial direction of the growth assembly. The compensation assembly is used for supplementing materials in the melt, and compensation materials are arranged on the compensation assembly. When the growth assembly is located at the first position, the growth assembly makes contact with the melt, and the compensation material does not make contact with the melt, and when the growth assembly is located at the second position, the growth assembly does not make contact with the melt, and the compensation material makes contact with the melt.

Description

Technical Field

[0001] The present invention relates to the field of crystal preparation, and in particular to a crystal growth device. Background Art

[0002] As a semiconductor material, silicon carbide has very excellent physical and chemical properties, and has broad application prospects and market space in high-end optoelectronics, high power, microwave radio frequency and other fields.

[0003] In the process of growing silicon carbide crystals, the seed crystal is often contacted with the melt required for crystal growth through various methods (for example, the pulling method, the vapor phase growth method, etc.), so that the silicon carbide molecules in the melt grow along the axial direction of the seed crystal rod, gradually forming a single crystal structure, and obtaining a silicon carbide single crystal. In the process of silicon carbide crystal growth, a certain proportion of aluminum is often added to the raw materials to improve the quality of the crystal. However, the saturated vapor pressure of aluminum is high and it is easy to evaporate. In addition, aluminum easily reacts with nitrogen in the thermal field to form aluminum nitride compounds, resulting in a continuous decrease in the proportion of aluminum in the melt during the growth of silicon carbide crystals.

[0004] This specification provides a crystal growth device that can ensure the proportion of aluminum in the melt during the crystal growth process, thereby improving the quality of crystal generation. Utility Model Content

[0005] One or more embodiments of the present specification provide a crystal growth device, including a crucible, a growth component, a drive component and a compensation component. The crucible is used to contain the melt required for crystal growth. The growth component is used to install a seed crystal, and the growth component is connected to the drive component. The drive component is used to drive the growth component to move between a first position and a second position along the axial direction of the growth component. The first position is the lowest point in the axial direction of the growth component when the growth component moves along the axial direction of the growth component, and the second position is other positions other than the first position in the axial direction of the growth component when the growth component moves along the axial direction of the growth component. The compensation component is used to supplement the material in the melt, and the compensation material is provided on the compensation component. When the growth component is located at the first position, the growth component is in contact with the melt, and the compensation material is not in contact with the melt. When the growth component is located at the second position, the growth component is not in contact with the melt, and the compensation material is in contact with the melt.

[0006] In some embodiments, the compensation component is connected to the growth component, and when the driving component drives the growth component to move, the compensation material disposed on the compensation component is driven to move.

[0007] In some embodiments, the compensation component includes a first connecting member, a first connecting rod, a second connecting rod and a fixing member, the compensation material is connected to the second connecting rod, the first connecting member is connected to the growth component, one end of the first connecting rod is fixedly connected to the first connecting member, the other end of the first connecting rod is movably connected to the second connecting rod, the second connecting rod is also movably connected to the fixing member, and the fixing member is fixed on the crystal growth equipment.

[0008] In some embodiments, the first connecting rod and / or the fixing member are slidably connected to the second connecting rod; when the first connecting rod is not slidably connected to the second connecting rod, the second connecting rod can rotate relative to the first connecting rod; when the fixing member is not slidably connected to the second connecting rod, the second connecting rod can rotate relative to the fixing member.

[0009] In some embodiments, a slide rail is provided on the first connecting rod, and the first connecting rod and / or the fixing member are slidably connected to the second connecting rod via the slide rail.

[0010] In some embodiments, the fixing member is disposed on the crucible.

[0011] In some embodiments, the first connecting member is a bearing, and the bearing includes an inner ring, an outer ring and a rotatable ball. The inner ring is sleeved on the growth component, the inner ring and the outer ring are connected through the ball, and the outer ring is connected to the first connecting rod; when the driving component drives the growth component to rotate axially around the growth component, the inner ring can rotate axially around the growth component relative to the outer ring. When the driving component drives the growth component to move axially along the growth component, the bearing is driven to move axially along the growth component.

[0012] In some embodiments, the compensation assembly further includes a third connecting rod, one end of which is movably connected to an end of the second connecting rod closer to the melt, and the other end of the third connecting rod is connected to the compensation material.

[0013] In some embodiments, the crystal growth equipment also includes a support member, and the compensation component includes a pulley, a bracket and a traction member, the bracket is arranged on the support member, the pulley is arranged on the bracket, the pulley can rotate around the axis of the pulley, the traction member is arranged around the pulley, one end of the traction member is connected to the growth component, and the other end of the traction member is connected to the compensation material.

[0014] In some embodiments, the compensation material includes at least one of aluminum, aluminum carbide, aluminum silicon alloy, and chromium aluminum alloy. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0016] Figure 1 is an exemplary block diagram of a crystal growth apparatus according to some embodiments of the present specification;

[0017] Figure 2A is a schematic diagram of a crystal growth device according to some embodiments of the present specification;

[0018] Figure 2B is another schematic diagram of a crystal growth device according to some embodiments of this specification;

[0019] Figure 3 is a schematic diagram of another crystal growth device according to some embodiments of the present specification;

[0020] Figure 4 is a schematic diagram of a first connecting member according to some embodiments of this specification;

[0021] Figure 5 is a schematic diagram of another crystal growth device according to some embodiments of the present specification;

[0022] Figure 6 is a schematic diagram of another crystal growth device according to some embodiments of the present specification.

[0023] Figure numerals: crystal growth equipment 10; crucible 11; growth assembly 12; drive assembly 13; compensation assembly 14; support member 15; seed crystal holder 122; seed crystal connecting rod 124; compensation material 141; first connecting member 142; first connecting rod 143; second connecting rod 144; fixing member 145; third connecting rod 146; pulley 147; bracket 148; traction member 149; inner ring 1422; ball 1424; outer ring 1426; rod body 1462; connecting element 1464; connection 1482; second bearing 1492; traction rope 1494. DETAILED DESCRIPTION

[0024] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of this specification. For ordinary technicians in this field, this specification can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0025] It should be understood that the "system", "device", "unit" and / or "module" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0026] As shown in this specification and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0027] Figure 1 is an exemplary block diagram of a crystal growth apparatus according to some embodiments of the present specification.

[0028] Figure 1 A crystal growing apparatus 10 is shown which may be used to produce single crystal or polycrystalline material, such as silicon carbide. Figure 1 The illustrated crystal growth apparatus 10 may include a crucible 11 , a growth assembly 12 , a drive assembly 13 , and a compensation assembly 14 .

[0029] The crucible 11 is used to contain the melt required for crystal growth. The aforementioned melt can be formed by melting the production raw materials and co-solvents required for crystal formation at high temperature. The crucible 11 can be a cylindrical structure with a sealed bottom and a hollow interior, or other feasible shapes and structures. The crucible 11 can include graphite material, and graphite has good electrical and thermal conductivity, as well as high resistance to thermal shock. An induction coil can be provided outside the crucible 11. After power is turned on, the induction coil can induction heat the crucible to ensure the normal growth of the crystal.

[0030] The growth assembly 12 is used to install the seed crystal. Figure 2A As shown, the growth assembly 12 may include a seed tray 122 and a seed connecting rod 124 .

[0031] The seed crystal holder 122 is used to fix the seed crystal. The material of the seed crystal holder 122 can be graphite. The seed crystal holder 122 can be set in a columnar, table-like or other feasible shape. The side of the seed crystal holder 122 in contact with the melt can be provided with a component for setting the seed crystal, for example, a seed crystal bonding surface, and the seed crystal can be bonded to the seed crystal bonding surface of the seed crystal holder 122 under certain conditions (for example, vacuuming, heating, etc.). During the crystal growth process, the seed crystal bonding surface of the seed crystal holder 122 can contact the melt in the crucible 11 to generate a crystal.

[0032] The seed crystal connecting rod 124 is connected to the seed crystal holder 122. The end of the seed crystal connecting rod 124 closer to the melt can be connected to the seed crystal holder 122 in a variety of ways. For example, the seed crystal connecting rod 124 can be threadedly connected to the seed crystal holder 122. For another example, the seed crystal connecting rod 124 can be snap-connected to the seed crystal holder 122.

[0033] The driving assembly 13 is used to drive the growth assembly 12 along the axial direction of the growth assembly 12 (such as Figure 2A The axial direction A) shown in the figure moves between the first position and the second position. The axial direction A mentioned above can be the axial direction of the seed crystal holder 122 and / or the seed crystal connecting rod 124.

[0034] The first position is the lowest point in the axial direction of the growth assembly 12 when the growth assembly 12 moves along the axial direction of the growth assembly 12. When the growth assembly 12 is in the first position, the growth assembly 12 is in contact with the melt. Figure 2B As shown, the seed crystal holder 122 is located below the seed crystal connecting rod 124 , and the first position may be the lowest point M on the axial direction A when the seed crystal holder 122 moves along the axial direction A. When the seed crystal holder 122 is located at point M, the seed crystal bonded to the seed crystal holder 122 contacts the melt in the crucible 11 .

[0035] The second position is a position other than the first position in the axial direction of the growth assembly 12 when the growth assembly 12 moves along the axial direction of the growth assembly 12. When the growth assembly 12 is in the second position, the growth assembly 12 is not in contact with the melt. Figure 2A As shown, the seed crystal holder 122 is located below the seed crystal connecting rod 124, and the second position may include the highest point N on the axial direction A when the seed crystal holder 122 moves along the axial direction A. When the seed crystal holder 122 is located at point N, the seed crystal holder 122 and the seed crystal connecting rod 124 are not in contact with the melt in the crucible 11. For another example, the second position may also include other positions where the seed crystal holder 122 and the seed crystal connecting rod 124 are not in contact with the melt in the crucible 11 when the seed crystal holder 122 moves along the axial direction A, for example, any position between N and M.

[0036] The growth assembly 12 is connected to the drive assembly 13. For example, one end of the seed crystal connecting rod 124 away from the melt can be connected to the drive assembly 13 in a variety of ways (such as threaded connection, adhesive connection, etc.). The drive assembly 13 can be a drive motor. The drive motor can drive the growth assembly 12 to move along the axial direction A. Exemplarily, the drive motor can drive the seed crystal connecting rod 124 and the seed crystal holder 122 connected to the seed crystal connecting rod 124 to move between the first position and the second position along the axial direction A. In some embodiments, the drive motor can also drive the growth assembly 12 to rotate around the axial direction A. For example, the drive motor can drive the seed crystal connecting rod 124 and the seed crystal holder 122 connected to the seed crystal connecting rod 124 to rotate around the axial direction A. By driving the growth assembly 12 to move by the drive assembly 13, the contact state between the growth assembly 12 and the melt can be changed, so that the elements in the melt (for example, silicon carbide molecules) are arranged in an orderly manner on the surface of the seed crystal, grow along the direction of the axial direction A, and gradually form a single crystal or polycrystalline material.

[0037] It should be noted that each material in the melt can ensure the smooth growth of the crystal. For example, aluminum in the melt can effectively reduce the interfacial energy of the silicon carbide solution, making it difficult for the crystal surface steps to bunch, and can effectively reduce the height of the crystal performance steps. Make the growth surface smooth, reduce solvent inclusions and two-dimensional nucleation, and improve the quality of the crystal. However, as the crystal growth process progresses, some materials may evaporate due to high temperature, or react with other products in the crystal growth process and be consumed, resulting in a reduction in their proportion, which cannot meet the needs of crystal growth. Some embodiments of the present specification provide a compensation component 14, which can be used to supplement the material in the melt. The compensation component 14 is provided with a compensation material 141 for supplementing the material in the melt, which can contact the melt in the crucible 11 and supplement the material in the melt when in contact. In some embodiments, the compensation material 141 may include at least one of aluminum, aluminum carbide, aluminum silicon alloy and chromium aluminum alloy.

[0038] In some embodiments, when the growth assembly 12 is located at the first position, the growth assembly 12 is in contact with the melt, and the compensation material 141 is not in contact with the melt; when the growth assembly 12 is located at the second position, the growth assembly 12 is not in contact with the melt, and the compensation material 141 is in contact with the melt. Taking the Czochralski method as an example, in the early stage of the crystal growth process, the seed crystal on the seed crystal holder 122 needs to be in contact with the melt to absorb enough solute atoms to facilitate crystal growth. During this period, since the crystal growth has just begun, the loss of material in the melt is not much, so there is no need to replenish the material. As the crystal growth process progresses, part of the material is consumed, or evaporated at high temperature, or reacts with the product of the crystal growth process, resulting in a reduction of the corresponding material in the melt, which cannot meet the needs of crystal growth and needs to be replenished by the compensation material 141. Therefore, by setting the contact state between the growth assembly 12 and the melt and the contact state between the compensation material 141 and the melt to opposite contact states, it can be ensured that the material in the melt is replenished when needed, avoiding unnecessary material consumption and reducing the cost of crystal growth.

[0039] The compensation component 14 can be implemented in various structures.

[0040] In some embodiments, the compensation component 14 can be set independently of the drive component 13 and move independently of the drive component 13. For example, the compensation component 14 can include a processor and a retractable structure, one end of which can be fixedly set on the crucible 11, and the other end of which can be provided with a compensation material 141. A stress sensing component can be provided on the seed crystal holder 122, for example, the stress sensing component can be a resistance stress sheet, and the resistance stress sheet can be pasted on the side of the seed crystal holder 122 close to the melt. The stress sensing component can convert the stress received into an electrical signal or other forms of energy signals. When the seed crystal holder 122 is deformed by force, the resistance value of the stress sensing component will change accordingly, thereby determining the contact state between the seed crystal holder 122 and the melt. When the processor obtains that the seed crystal holder 122 is not in contact with the melt, the retractable structure can be controlled to be retracted to make the compensation material 141 set on the retractable structure contact with the melt.

[0041] In some embodiments, the compensation component 14 is connected to the growth component 12. When the driving component 13 drives the growth component 12 to move, the compensation material 141 set on the compensation component 14 is driven to move. This setting makes it easy to control whether the compensation material 141 replenishes the melt, thereby simplifying the structure of the crystal growth equipment 10 and reducing costs.

[0042] In some embodiments, the compensation component 14 includes a first connecting member 142, a first connecting rod 143, a second connecting rod 144 and a fixing member 145, the compensation material 141 is connected to the second connecting rod 144, and the first connecting member 142 is connected to the growth component 12. For more information about the above embodiments, please refer to Figure 2A as well as Figure 2B and its related description.

[0043] In some embodiments, the crystal growth device 10 further includes a support member 15, the compensation assembly 14 includes a pulley 147, a bracket 148 and a traction member 149, one end of the traction member 149 is connected to the growth assembly 12, and the other end of the traction member 149 is connected to the compensation material 141. For more information about the above embodiments, please refer to Figure 4 as well as Figure 5 and its related description.

[0044] In some embodiments, the crystal growth device 10 may be provided with one or more compensation components 14. When a plurality of compensation components 14 are provided in the crystal growth device 10, the structures of the plurality of compensation components 14 may be the same or different. The compensation components 14 may be provided on the growth component 12 at the same or different intervals. For example, four compensation components 14 may be provided around the same height of the seed crystal connecting rod 124, and the interval angle between each compensation component 14 is 90°. By providing a plurality of compensation components 14, the requirements for replenishing different amounts of materials in the melt can be met, and at the same time, the compensation material 14 is evenly diffused in the melt, thereby improving the quality of crystal generation.

[0045] In some embodiments, when a plurality of compensation components 14 are provided in the crystal growth device 10, the plurality of compensation components 14 can be independently provided on the growth device 12. For example, the plurality of compensation components 14 can be provided at different heights of the seed crystal connecting rod 124. In some embodiments, when a plurality of compensation components 14 are provided in the crystal growth device 10, the plurality of compensation components 14 can also be connected to the same first connecting member 142 to reduce the production cost of the crystal growth device 10. Figure 4 As shown, the crystal growth device 10 is provided with two compensation components 14 , and the two compensation components 14 share a first connecting member 142 .

[0046] In some embodiments of the present specification, the crystal growth device 10 provided with the compensation component 14 can supplement the material in the melt during the crystal growth process to ensure the normal progress of the crystal growth and improve the quality of the crystal growth.

[0047] An implementation of the compensation component 14 will be described below in this specification.

[0048] In some embodiments, the compensation component 14 may include a first connecting member 142, a first connecting rod 143, a second connecting rod 144 and a fixing member 145, the compensation material 141 is connected to the second connecting rod 144, the first connecting member 142 is connected to the growth component 12 (for example, the seed crystal holder 122 or the seed crystal connecting rod 124), one end of the first connecting rod 143 is fixedly connected to the first connecting member 142, the other end of the first connecting rod 143 is movably connected to the second connecting rod 144, the second connecting rod 144 is also movably connected to the fixing member 145, and the fixing member 145 is fixedly mounted on the crystal growth device 10.

[0049] The various structures of the aforementioned compensation component 14 can be made of a variety of materials that have high thermal shock resistance and are not easy to react with the melt, for example, they can be made of graphite.

[0050] In some embodiments, the first connecting member 142 may be a bearing (hereinafter referred to as the first bearing for ease of description). Figure 4 As shown, when the first connecting member 142 is a first bearing, the first bearing may include an inner ring 1422 , an outer ring 1426 and a rotatable ball 1424 .

[0051] The inner ring 1422 is sleeved on the growth component 12 to achieve connection with the growth component 12 of the first connecting member 142. For example, Figure 4 The inner ring 1422 shown is sleeved on the seed crystal connecting rod 124. For another example, the inner ring 1422 can also be sleeved on the seed crystal holder 122.

[0052] The outer ring 1426 is connected to the first connecting rod 143, and the inner ring 1422 and the outer ring 1426 can be connected through the ball 1424, so that the inner ring 1422 and the outer ring 1426 can rotate relative to each other around the axial direction of the first bearing. Through the above structure, it can be ensured that when the driving component 13 drives the growth component 12 to rotate around the axial direction of the growth component 12, the inner ring 1422 can rotate around the axial direction of the growth component 12 relative to the outer ring 1426, and when the driving component 13 drives the growth component 12 to move along the axial direction of the growth component 12, the first bearing is driven to move along the axial direction of the growth component 12.

[0053] The first connecting member 142 may also be other structures, for example, the first connecting member 142 may only include a ball, which may be connected to the first connecting rod 143, and a circle of grooves is provided on the seed crystal connecting rod 124, in which the ball is provided. When the seed crystal connecting rod 124 rotates around its axial direction, the position of the ball remains unchanged; when the seed crystal connecting rod 124 moves along its axial direction, the ball is driven to move along the axial direction of the growth assembly 12.

[0054] In some embodiments, Figure 2AAs shown, the fixing member 145 can be arranged on the crucible 11. The fixing member 145 can also be arranged on other structures in the crystal growth device 10 except the growth component 12. For example, the crystal growth device 10 can also include a vacuum furnace, and the fixing member 145 can also be arranged on the vacuum furnace. It is understood that the fixing member 145 cannot be arranged on the growth component 12, because if the fixing member 145 is also arranged on the growth component 12, the compensation component 14 as a whole will follow the synchronous movement of the compensation component 14, and the contact state between the growth component 12 and the melt and the contact state between the compensation material 141 and the melt cannot be set to the opposite contact state.

[0055] In some embodiments, the compensation material 141 may be directly connected to the end of the second connecting rod 144 that is closer to the melt.

[0056] In some embodiments, the compensation assembly 14 further includes a third connecting rod 146, one end of the third connecting rod 146 is movably connected to an end of the second connecting rod 144 closer to the melt, and the other end of the third connecting rod 146 is connected to the compensation material 141. Figure 2B As shown, the third connecting rod 146 may include a rod body 1462 and a connecting element 1464, wherein the connecting element 1464 is arranged at an end of the rod body 1462 away from the melt, and the compensation material 141 is arranged at an end of the rod body 1462 closer to the melt. The connecting element 1464 may be a connecting ring, a circular connection, etc. The connecting element 1464 may be connected to an end of the second connecting rod 144 closer to the melt, and the rod body 1462 and the compensation material 141 may remain in a vertical state under the action of gravity. Through the above arrangement, the radial dimension of the compensation component 14 (for example, the radial dimension of the seed crystal holder 122 or the seed crystal connecting rod 124) may be reduced to avoid collision between the compensation component 14 and the crucible 11; at the same time, the distance between the compensation material 141 and the melt is also reduced, so that the compensation material 141 is more likely to contact the melt.

[0057] In some embodiments, the first connecting rod 143 and / or the fixing member 145 are slidably connected to the second connecting rod 144. For example, a slide rail is provided on the first connecting rod 143, and the first connecting rod 143 and / or the fixing member 145 are slidably connected to the second connecting rod 144 through the slide rail. For another example, the first connecting rod 143 and / or the fixing member 145 are sliding bearings sleeved on the second connecting rod 144.

[0058] In some embodiments, the first connecting rod 143 and the fixing member 145 can be slidably connected to the second connecting rod 144. For example, if the first connecting rod 143 and the fixing member 145 are both slidably connected to the second connecting rod 144, and the first connecting member 142 is connected to the seed crystal connecting rod 124, when the seed crystal connecting rod 124 is connected to the seed crystal connecting rod 124, Figure 2B The position shown moves axially to Figure 2AWhen the position is shown, the first connecting member 142 and the first connecting rod 143 are driven to move synchronously in the axial direction, the connection positions of the second connecting rod 144 with the first connecting rod 143 and the fixing member 145 are changed, and the inclination angle of the second connecting rod 144 with the axial direction A becomes smaller, so that the distance between the compensation material 141 arranged at the end of the second connecting rod 144 closer to the melt and the melt continues to decrease until the compensation material 141 contacts the melt.

[0059] In some embodiments, the first connecting rod 143 or the fixing member 145 may be slidably connected to the second connecting rod 144. When the first connecting rod 143 is not slidably connected to the second connecting rod 144, the second connecting rod 144 may rotate relative to the first connecting rod 143; when the fixing member 145 is not slidably connected to the second connecting rod 144, the second connecting rod 144 may rotate relative to the fixing member 145. For example, when the first connecting rod 143 is not slidably connected to the second connecting rod 144, a connecting ring may be provided at one end of the first connecting rod 143, and a connecting hole may be provided on the second connecting rod 144, and the connecting ring may be inserted into the connecting hole, so that the second connecting rod 144 can rotate relative to the first connecting rod 143. Through the above arrangement, when the growth assembly 12 moves along the axial direction A, the inclination angle of the second connecting rod 144 with the axial direction A changes, thereby changing the distance between the compensation material 141 disposed at the end of the second connecting rod 144 closer to the melt and the melt. For example, if the first connecting rod 143 is slidably connected to the second connecting rod 144, the second connecting rod 144 can rotate relative to the fixing member 145, and the first connecting member 142 is connected to the seed crystal connecting rod 124. When the seed crystal connecting rod 124 moves along the axial direction A in a direction away from the melt, it drives the first connecting member 142 and the first connecting rod 143 to move synchronously along the axial direction. The connection position of the second connecting rod 144 with the first connecting rod 143 changes, and the inclination angle of the second connecting rod 144 with the axial direction A becomes smaller, so that the distance between the compensation material 141 arranged at the end of the second connecting rod 144 closer to the melt and the melt continues to decrease until the compensation material 141 contacts the melt.

[0060] In some embodiments of the present specification, the compensation component 14 is configured to include a first connecting member 142, a first connecting rod 143, a second connecting rod 144, and a fixing member 145, the compensation material 141 is connected to the second connecting rod 144, and the first connecting member 142 is connected to the growth component 12, so that when the growth component 12 moves along the axial direction of the growth component 12, the position of the compensation material 141 is driven to change through the relevant structure in the compensation component 14, so as to supplement the material in the melt and improve the quality of crystal growth. In addition, this structural setting does not require an additional driving structure to be provided for the compensation component 14, thereby reducing costs.

[0061] Another implementation of the compensation component 14 will be described below in this specification.

[0062] In some embodiments, the crystal growth device 20 may further include a support member 15. The support member 15 may be a variety of structures that can support the bracket 148. For example, the crystal growth device 20 may further include a vacuum furnace, and the support member 15 may be a top wall of the vacuum furnace. For another example, the support member 15 may also be a side wall of the crucible 11.

[0063] like Figure 5 As shown, the compensation component 14 may include a pulley 147, a bracket 148, and a traction member 149. The bracket 148 is disposed on the support member 15, the pulley 147 is disposed on the bracket 148, the pulley 147 can rotate around the pulley 147 axis, and the traction member 149 is disposed around the pulley 147. In some embodiments, one end of the traction member 149 is connected to the growth component 12, and the other end of the traction member 149 is connected to the compensation material 141. For example, Figure 5 One end of the pulling member 149 shown can be connected to the seed crystal connecting rod 124. For another example, one end of the pulling member 149 can also be connected to the seed crystal holder 122.

[0064] In some embodiments, one end of the traction member 149 may be directly connected to the growth assembly 12. For example, one end of the traction member 149 may be welded to the seed crystal connecting rod 124. Through this arrangement, when the seed crystal connecting rod 124 moves along the axial direction A, one end of the traction member 149 may be driven to move along the axial direction A, thereby driving the compensation material 141 disposed at the other end of the traction member 149 to move, thereby changing the contact state between the compensation material 141 and the melt.

[0065] In some embodiments, the traction member 149 may include a second bearing 1492 and a traction rope 1494. One end of the traction rope 1494 may also be provided with a second bearing 1492 and connected to the growth assembly 12 through the second bearing 1492. The other end of the traction rope 1494 is connected to the compensation material 141. For the specific structure of the second bearing 1492, please refer to the relevant description of the first bearing above in this specification. Exemplarily, the inner ring of the second bearing 1492 may be sleeved on the seed crystal connecting rod 124, the outer ring of the second bearing 1492 may be connected to the traction rope 1494 (for example, welded), and the inner ring and outer ring of the second bearing 1492 may be connected by a rotatable ball. Through the above-mentioned arrangement, when the seed crystal connecting rod 124 moves along the axial direction A, it can drive the second bearing 1492 and one end of the traction rope 1494 to move along the axial direction A, thereby driving the compensation material 141 arranged at the other end of the traction rope 1494 to move, and changing the contact state between the compensation material 141 and the melt; when the seed crystal connecting rod 124 rotates around the axial direction A, it can only drive the inner ring of the second bearing 1492 to rotate around the axial direction A, without causing the state of the traction rope 1494 to change, so as to ensure the normal progress of the crystal pulling growth.

[0066] In some embodiments of the present specification, the compensation component 14 is configured to include a pulley 147, a bracket 148, and a traction member 149, so that when the crystal is pulled and grown, the position of the compensation material 141 can be changed by the compensation component 14 to supplement the material in the melt and improve the quality of crystal growth. In addition, this structural setting does not require an additional driving structure for the compensation component 14, thereby reducing costs.

[0067] In some embodiments, the pulley 147 is disposed at a connection 1482 on the bracket 148, and the distance between the connection 1482 and the melt can change. For example, the bracket 148 as a whole can move along the axial direction A, thereby causing the distance between the connection 1482 and the melt to change. For another example, the bracket 148 is a structure that can be telescopic along the axial direction A, and the change in the telescopic state can cause the distance between the connection 1482 and the melt to change.

[0068] It is understandable that the change in the distance between the connection 1482 and the melt will cause the distance between the pulley 147 and the melt to change. When the aforementioned change is large enough, it will change the contact state between the compensation material 141 and the melt when the growth assembly 12 is at the same position on the axial direction A. Exemplarily, Figure 5 as well as Figure 6 The growth components 12 shown are all located at the highest point along the axial direction A when moving along the axial direction A. Figure 5 The compensation material 141 shown can just contact with the melt (for example, the compensation material 141 is immersed in the melt by 1 mm) to supplement the material in the melt; when the position of the connection 1482 is Figure 5 Move to Figure 6 When the distance between the pulley 147 and the melt increases (for example, by 10 mm), since the length of the traction member 149 is fixed, when the distance between the pulley 147 and the melt increases, the distance between the other end of the traction member 149 wound around the pulley 147 and the melt increases, thereby changing the distance between the compensation material 141 disposed at the other end of the traction member 149 and the melt, resulting in the separation of the compensation material 141 from the melt. It can be understood that Figure 6 When the growth assembly 12 shown is at the highest point along the axial direction A when moving, the compensation material 141 cannot yet contact the melt. Figure 6 When the growth assembly 12 is shown moved to another position along the axial direction A, the compensation material 141 cannot contact the melt.

[0069] Through the above-mentioned settings, the contact state between the compensation material 141 and the melt can be flexibly adjusted as needed during the crystal growth process, thereby improving the controllability of the crystal growth process, facilitating the user to perform adaptive processing according to different crystal growth conditions, and ensuring the quality of crystal growth. For example, when the material in the melt meets the requirements of crystal growth at the initial stage of crystal growth, or when the crystal growth is roughly completed at the later stage of crystal growth, the distance between the pulley 147 and the melt can be adjusted so that no matter how the growth component 12 moves along the axial direction A, the compensation material 141 will not replenish the material in the melt, thereby reducing material waste and reducing costs; only when the material in the melt needs to be replenished, the distance between the pulley 147 and the melt is adjusted, and the compensation material 141 is driven to replenish the material in the melt by the growth component 12 moving along the axial direction A, thereby improving the quality of crystal growth.

[0070] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this specification. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this specification.

[0071] At the same time, this specification uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures or characteristics in one or more embodiments of this specification can be appropriately combined.

[0072] Similarly, it should be noted that in order to simplify the description disclosed in this specification and thus help understand one or more embodiments, in the above description of the embodiments of this specification, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the subject matter of this specification are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0073] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0074] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, as an example and not a limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.

Claims

1. A crystal growth device, characterized in that: include: Crucible, used to hold the melt required for crystal growth; A growth assembly, used for mounting a seed crystal, wherein the growth assembly is connected to a driving assembly; The driving assembly is used to drive the growth assembly to move along the axis of the growth assembly between a first position and a second position. The first position is the lowest point in the axial direction of the growth component when the growth component moves along the axial direction of the growth component. The second position is another position other than the first position in the axial direction of the growth component when the growth component moves along the axial direction of the growth component; A compensation component is used to supplement the material in the melt, and the compensation component is provided with compensation material, wherein: When the growth assembly is in the first position, the growth assembly is in contact with the melt, and the compensation material is not in contact with the melt, When the growth assembly is in the second position, the growth assembly is not in contact with the melt and the compensation material is in contact with the melt.

2. The device according to claim 1, characterized in that The compensating component is connected to the growing component, When the driving component drives the growing component to move, the compensation material disposed on the compensation component is driven to move.

3. The device according to claim 2, characterized in that The compensation assembly includes a first connecting member, a first connecting rod, a second connecting rod and a fixing member, the compensation material is connected to the second connecting rod, The first connecting member is connected to the growth component, one end of the first connecting rod is fixedly connected to the first connecting member, the other end of the first connecting rod is movably connected to the second connecting rod, and the second connecting rod is also movably connected to the fixing member, and the fixing member is fixed on the crystal growth equipment.

4. The device according to claim 3, characterized in that The first connecting rod and / or the fixing member are slidably connected to the second connecting rod; wherein, When the first connecting rod is not slidably connected to the second connecting rod, the second connecting rod can rotate relative to the first connecting rod; When the fixing member is not slidably connected to the second connecting rod, the second connecting rod can rotate relative to the fixing member.

5. The device according to claim 4, characterized in that The first connecting rod is provided with a slide rail, and the first connecting rod and / or the fixing member are slidably connected to the second connecting rod via the slide rail.

6. The device according to claim 3, characterized in that The fixing member is arranged on the crucible.

7. The device according to claim 3, characterized in that The first connecting member is a bearing, and the bearing comprises an inner ring, an outer ring and a rotatable ball, the inner ring is sleeved on the growth component, the inner ring and the outer ring are connected through the ball, and the outer ring is connected to the first connecting rod; When the driving component drives the growth component to rotate around the axial direction of the growth component, the inner ring can rotate around the axial direction of the growth component relative to the outer ring. When the driving component drives the growth component to move axially along the growth component, the bearing is driven to move axially along the growth component.

8. The device according to claim 3, characterized in that The compensation component further includes a third connecting rod, one end of which is movably connected to an end of the second connecting rod closer to the melt, and the other end of the third connecting rod is connected to the compensation material.

9. The device according to claim 2, characterized in that The crystal growth device further includes a support member, and the compensation assembly includes a pulley, a bracket and a traction member. The bracket is arranged on the supporting member, the pulley is arranged on the bracket, the pulley can rotate around the pulley axis, the traction member is arranged around the pulley, one end of the traction member is connected to the growth component, and the other end of the traction member is connected to the compensation material.

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