Semiconductor process equipment and process chamber thereof

Abstract

The utility model provides semiconductor process equipment and a process chamber thereof. The process chamber comprises a chamber body, a heating assembly used for heating a preset area, and a temperature measuring assembly used for measuring the current temperature of the preset area. A cooling assembly corresponding to the heating assembly in position is arranged on the side wall of the cavity body, and a cooling medium is introduced into the cooling assembly and used for reducing the temperature of the preset area. The heating assembly is used for heating the preset area, the cooling assembly can reduce the temperature of the preset area, and the heating assembly and the cooling assembly are matched to actively adjust the temperature field distribution in the chamber body, so that the temperature field in the chamber body is more uniform, and the plasma is more uniformly distributed in the chamber body. And the wafer etching uniformity of the plasma is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and a process chamber thereof. Background Art

[0002] With the rapid development of semiconductor process technology, plasma etcher is widely used in semiconductor process of integrated circuit. With the advancement of semiconductor process, the requirements of etching process for stability and uniformity are increasing day by day.

[0003] Therefore, how to meet the uniformity requirements of the etching process is a technical problem that technical personnel in this field urgently need to solve. Utility Model Content

[0004] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and a process chamber thereof, which can meet the uniformity requirements of the etching process.

[0005] To achieve the purpose of the present application, a process chamber is provided, comprising a chamber body, a heating component for heating a preset area of ​​the chamber body, and a temperature measuring component for measuring the current temperature of the preset area;

[0006] The side wall of the chamber body is provided with a cooling component corresponding to the position of the heating component, and a cooling medium is passed through the cooling component to reduce the temperature of the preset area.

[0007] In some embodiments, the cooling component includes an air cooling component and a liquid cooling component, the side wall of the chamber body includes a first side wall provided with a maintenance port, two side walls adjacent to the first side wall are second side walls, and a third side wall facing away from the first side wall, the third side wall is provided with a film transfer port, the liquid cooling component is arranged around the maintenance port on the first side wall, and each of the second side walls is provided with the air cooling component.

[0008] In some embodiments, there are multiple temperature measuring components, the number of air cooling components is greater than or equal to the number of temperature measuring components, and each temperature measuring component corresponds to at least one air cooling component.

[0009] In some embodiments, the number of the temperature measuring components is four, and the temperature measuring components are arranged one by one at the four vertex corners of the chamber body;

[0010] The number of the heating components is four, and the heating components are arranged one by one at the four vertex corners of the chamber body.

[0011] In some embodiments, each of the second side walls is provided with two of the air cooling components, and the positions of the two air cooling components on the same second side wall respectively correspond to the two temperature measuring components on the top of the second side wall;

[0012] The process chamber controls the air cooling component corresponding to the temperature measuring component according to the current temperature measured by the temperature measuring component.

[0013] In some embodiments, the air cooling component includes an air cooling channel and an air inlet pipe, the air cooling channel includes a plurality of air outlet grooves arranged in parallel and an air uniforming groove connected to each of the air outlet grooves, the opening of the air outlet groove faces away from the inner side of the chamber body, and the air uniforming groove is connected to the air inlet pipe.

[0014] In some embodiments, the gas uniforming groove is perpendicular to each of the gas outlet grooves and passes through the midpoint of each of the gas outlet grooves in the length direction.

[0015] In some embodiments, the first side wall has a liquid cooling groove arranged around the maintenance port, and the liquid cooling assembly includes a liquid cooling pipe, a liquid inlet pipe and a liquid outlet pipe. The liquid cooling pipe is arranged in the liquid cooling groove, and the liquid inlet pipe and the liquid outlet pipe are respectively connected to both ends of the liquid cooling pipe.

[0016] In some embodiments, a magnetic shielding plate is further included, the magnetic shielding plate covers the outer surface of the second side wall, the magnetic shielding plate has a plurality of air outlets, and the air outlets correspond one by one to the slots of the air outlet groove.

[0017] The present application also provides a semiconductor process equipment, including a transfer platform and a process chamber, wherein the process chamber includes any one of the process chambers described above, and the process chamber has a wafer transfer port connected to the transfer platform, and the transfer platform is used to transfer wafers between the process chambers.

[0018] This application has the following beneficial effects:

[0019] The process chamber provided in the present application comprises a chamber body, a heating component for heating a preset area of ​​the chamber body, and a temperature measuring component for measuring the current temperature of the preset area;

[0020] The side wall of the chamber body is provided with a cooling component corresponding to the position of the heating component, and a cooling medium is passed into the cooling component to reduce the temperature of a preset area.

[0021] The heating component is used to heat the preset area, and the cooling component can reduce the temperature of the preset area. The heating component and the cooling component can cooperate to actively adjust the temperature field distribution in the chamber body, making the temperature field inside the chamber body more uniform, thereby making the plasma more evenly distributed in the chamber body, thereby improving the uniformity of plasma etching on the wafer.

[0022] Another object of the present application is to provide a semiconductor process equipment including the above process chamber and having the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of the structure of an existing process chamber;

[0024] Figure 2 A schematic diagram of the structure of a process chamber provided for a specific embodiment of the present application;

[0025] Figure 3 for Figure 2 A schematic structural diagram of the second side wall of the middle chamber body;

[0026] Figure 4 for Figure 2 a cross-sectional view of the second side wall of the middle chamber body;

[0027] Figure 5 for Figure 2 a cross-sectional view of a first side wall of the middle chamber body;

[0028] Figure 6 A schematic diagram of a temperature control method for this application;

[0029] Figure 7 A schematic diagram of the structure of a semiconductor process equipment provided in a specific embodiment of the present application.

[0030] in, Figures 1 to 7 The reference numerals in the drawings are:

[0031] 1. Inlet nozzle; 2. RF coil; 3. Dielectric window; 4. Adjustment bracket; 5. Liner; 6. Reaction chamber; 7. Wafer; 8. Lower electrode; 9. Vertical valve plate; 10. Molecular pump; 11. Bracket heater; 12. Chamber heater; 01. Process chamber; 02. Transfer platform; 03. Equipment front-end module; 04. Loading chamber; 100. Chamber body; 110. First side wall; 111. Liquid cooling tank; 112. Press block; 113. Fixing groove; 114. Screw; 120. Second side wall; 200. Cooling assembly; 210. Liquid cooling assembly; 211. Liquid cooling pipe; 212. Liquid outlet pipe; 213. Liquid inlet pipe; 220. Air cooling assembly; 221. Inlet pipe; 222. Gas outlet groove; 223. Gas uniformity groove; 300. Heating assembly; 400. Temperature measurement assembly; 500. Magnetic shielding plate. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the chamber body thereof provided by the present application are described in detail below in conjunction with the accompanying drawings.

[0033] In order to ensure the stability and uniformity of the etching process, it is necessary to accurately control the electromagnetic field, airflow field and temperature field in the reaction chamber. In the related art, the inductively coupled radio frequency mechanism of the upper electrode of the reaction chamber ionizes the process gas in the reaction chamber to form a plasma with an extremely high temperature. The heat of the plasma will be transferred to the parts that the plasma can contact, such as the dielectric window, the adjustment bracket, the reaction chamber, the liner, etc. At the same time, the chamber body 100, the adjustment bracket and other structures will also transfer heat to the surrounding contactable parts, such as the transmission platform, the chamber cover mechanism, the air, etc. After continuously experiencing heating and cooling, the temperature of the reaction chamber will reach a dynamic balance in the etching process. At this time, the stability and uniformity of the etching process will reach the most ideal state. Therefore, ensuring that the environmental temperature of the etching process is stable and uniform plays an important role in the uniformity of wafer etching.

[0034] Existing process chambers, such as Figure 1 As shown, it includes an inlet nozzle 1, an RF coil 2, a dielectric window 3, an adjustment bracket 4, an inner liner 5, a reaction chamber 6, a wafer 7, a lower electrode 8, a vertical valve plate 9, a molecular pump 10, a bracket heater 11, and a chamber heater 12. During the process, the process gas enters the process chamber through the inlet nozzle 1 at the center of the dielectric window 3. When the RF coil 2 is connected to the RF current, the process gas in the process chamber is excited to a plasma state under the action of the alternating electromagnetic field. The plasma is confined to a specific area by the dielectric window 3, the adjustment bracket 4, the inner liner 5, and the wafer 7. The lower electrode 8 generates a lower bias electric field to accelerate the movement of the plasma. The plasma diffuses downward to the surface of the wafer 7 and reacts with the wafer 7 to complete the etching process. After the etching is completed, the molecular pump 10 pumps the by-products produced by the reaction out of the chamber. When the etching process is carried out, the temperature of the plasma generated is relatively high, and most of the heat will be transferred to the dielectric window 3, the adjustment bracket 4, the liner 5 and the reaction chamber 6 through direct or indirect contact. At the same time, there is heat exchange between different components. After a certain period of heat transfer, the temperature inside the reaction chamber will reach a certain dynamic balance, and this is the moment when the process effect is best. The bracket heater 11 and the chamber heater 12 can heat the adjustment bracket 4 and the reaction chamber 6 respectively. When temperature adjustment is required, the heating power of the bracket heater 11 and the chamber heater 12 can be controlled to achieve the stability of the entire temperature control system.

[0035] However, the process chamber usually needs to be used in conjunction with a transfer platform, and one side wall of the process chamber fits with the transfer platform and generates heat exchange with the transfer platform, and heat is dissipated through the transfer platform. As a result, the temperature of each side wall of the process chamber will be different, resulting in uneven temperature field distribution in the process chamber.

[0036] The process chamber provided in this application is as follows: Figure 2As shown, it includes a chamber body 100, a heating component 300 for heating a preset area of ​​the chamber body 100, and a temperature measuring component 400 for measuring the current temperature of the preset area. A cooling component 200 is provided on the side wall of the chamber body 100, and a cooling medium is passed into the cooling component 200 to reduce the temperature of the preset area.

[0037] The chamber body 100 has at least one preset area, and each preset area can be provided with one or more heating components 300 for heating. Each preset area can be provided with one or more cooling components 200 for cooling. The cooling and temperature measuring component 400 can measure the current temperature of the preset area in real time.

[0038] Optionally, the process chamber also includes a control mechanism, which is electrically connected to the temperature measuring component 400 and controls the heating component 300 and the cooling component 200 according to the current temperature to adjust the temperature field in the chamber body 100. The control mechanism can compare the current temperature with the set temperature. When the current temperature is higher than the set temperature, the cooling component 200 is used to cool down; when the current temperature is lower than the set temperature, the heating component 300 is used to heat up. The set temperature can be a temperature range or a specific temperature value. When the set temperature is a temperature range, the control mechanism cools down when the current temperature is higher than the upper limit of the set temperature, and heats up when the current temperature is lower than the lower limit of the set temperature. The control mechanism can be an industrial computer, an MCU microcontroller, etc.

[0039] In this embodiment, the process chamber is provided with a cooling assembly 200, and the control mechanism can actively cool down the preset area of ​​the process chamber through the cooling assembly 200. The control mechanism controls the heating and cooling of the process chamber to make the temperature of the preset area closer to the set temperature, thereby improving the uniformity of the temperature in the process chamber, thereby improving the uniformity of plasma etching on the wafer.

[0040] In some embodiments, the cooling assembly 200 includes an air cooling assembly 220 and a liquid cooling assembly 210. The side wall of the chamber body 100 includes a first side wall 110 provided with a maintenance port, and two side walls adjacent to the first side wall 110 are second side walls 120. The liquid cooling assembly 210 is arranged around the maintenance port on the first side wall 110, and each second side wall 120 is provided with an air cooling assembly 220. In a specific embodiment of the present application, the cooling medium used by the liquid cooling assembly 210 is water. Of course, the user can also use other cooling media, which is not limited here.

[0041] like Figure 2As shown, the maintenance port is used to assemble and maintain the components inside the chamber body 100, so the maintenance port has a large area. Due to the existence of the maintenance port, the first side wall 110 does not have enough area to use air cooling for cooling, so the present application sets a liquid cooling component 210 on the first side wall 110 for cooling.

[0042] The chamber body 100 is a rectangular parallelepiped. The side wall of the chamber body 100 opposite to the first side wall 110 is usually close to the transmission platform 02 of the semiconductor process equipment. The side wall is in contact with the transmission platform 02, and heat is dissipated through the transmission platform 02. The temperature is well controlled and there is no need to set up a cooling component 200 for cooling. The two side walls adjacent to the first side wall 110 of the chamber body 100 are the second side walls 120. The second side wall 120 has enough area to set up an air cooling component 220 for cooling. The air cooling component 220 has a higher accuracy in temperature control, which is convenient for improving the control accuracy of the temperature field in the process chamber. Of course, the user can also use other methods to cool the process chamber as needed, which is not limited here.

[0043] The air cooling assembly 220 and the liquid cooling assembly 210 may be provided with an air cooling valve and a liquid cooling valve, and the control mechanism is electrically connected to the air cooling valve and the liquid cooling valve. The control mechanism controls the corresponding air cooling valve and the liquid cooling valve to adjust the air cooling flow and the liquid cooling flow according to the current temperature measured by the temperature measuring assembly 400, thereby controlling the temperature of the corresponding preset area.

[0044] In some embodiments, the process chamber includes a plurality of preset areas. Accordingly, there are a plurality of temperature measuring components 400. The number of air cooling components 220 is greater than or equal to the number of temperature measuring components 400, and each temperature measuring component 400 corresponds to at least one air cooling component 220.

[0045] Each preset area is cooled by at least one air cooling component 220 , and the control mechanism can cool each preset area by the corresponding air cooling component 220 , thereby performing regional control in the process chamber and further improving the temperature control accuracy.

[0046] In some embodiments, Figure 2 As shown, there are four heating components 300, and the heating components 300 are arranged one by one at the four corners of the chamber body 100. Due to the influence of the airflow field inside the chamber body 100, the heating inside the chamber body 100 is not uniform. In this embodiment, the chamber body 100 is divided into four preset areas, and the control mechanism can control the four heating components 300 to heat the four preset areas respectively, thereby compensating for the uneven heating problem caused by other factors and improving the uniformity of the temperature inside the chamber body 100. Of course, the number and distribution position of the heating components 300 can be set according to the needs of the user, and are not limited here.

[0047] Optionally, there are four temperature measuring components 400, which are arranged one by one at the four corners of the chamber body 100. The four temperature measuring components 400 respectively measure the current temperature of the four preset areas of the chamber body 100 in real time. The control mechanism controls the temperature of the chamber body 100 in different areas according to the current temperature, which can improve the temperature control accuracy and further improve the uniformity of the temperature field in the chamber body 100. Of course, the number and distribution position of the temperature measuring components 400 can be set according to the needs of the user and are not limited here.

[0048] Optional, such as Figure 2 As shown, the four corners of the chamber body 100 are provided with mounting grooves, and the heating component 300 and the temperature measuring component 400 can be installed on the chamber body 100 through the mounting grooves. Of course, the user can also install the heating component 300 and the temperature measuring component 400 in other ways as needed, which is not limited here.

[0049] In some embodiments, each second side wall 120 is provided with two air cooling components 220, and the positions of the two air cooling components 220 on the same second side wall 120 correspond to the two temperature measuring components 400 at the top corners of the second side wall 120. The two air cooling components 220 are independent of each other, and the areas where the two air cooling components 220 are located correspond to the two temperature measuring components 400, respectively. The control mechanism controls the air cooling component 220 corresponding to the temperature measuring component 400 according to the current temperature measured by the temperature measuring component 400, thereby realizing closed-loop control of the temperature in an area. When the temperature in the area is too high, the air cooling component 220 is started to cool down; when the temperature in the area is too low, the temperature of the heater is increased to heat up. The user can also set the position, quantity and distribution of the air cooling component 220 as needed, which is not limited here.

[0050] In some embodiments, Figure 2 and Figure 3 As shown, the air cooling component 220 includes an air cooling channel and an air inlet pipe 221 connected to the air cooling channel, the air cooling channel includes a plurality of parallel air outlet grooves 222 and an air uniforming groove 223 connected to each of the air outlet grooves 222, the openings of the air outlet grooves 222 face away from the inner side of the chamber body 100, and the air uniforming grooves 223 are connected to the air inlet pipe 221.

[0051] Optionally, the gas outlet groove 222 is arranged longitudinally on the second side wall 120, that is, the gas outlet groove 222 extends from the top to the bottom of the second side wall 120. The gas uniforming groove 223 is arranged transversely on the second side wall 120, perpendicular to each gas outlet groove 222, and the gas uniforming groove 223 is arranged on the center line of the gas outlet groove 222. The gas uniforming groove 223 is connected to the gas outlet groove 222, but not directly connected to the outside of the second side wall 120. The cooling gas enters the gas uniforming groove 223 from the air inlet pipe 221, and the gas uniforming groove 223 can make the cooling gas uniformly distributed in the transverse direction of the second side wall 120. Then the cooling gas enters the gas outlet groove 222 and is discharged from the opening of the gas outlet groove 222. Since the gas uniforming groove 223 passes through the midpoint of each gas outlet groove 222 in the length direction, the cooling gas has the same distance in the length direction of the gas outlet groove 222 and flows downward, so that the cooling gas is uniformly distributed in the longitudinal direction of the second side wall 120. Figure 3 In the specific embodiment shown, one air cooling component 220 includes four air outlet slots 222 , and the user can also set the number of the air outlet slots 222 as needed, which is not limited here.

[0052] In addition, if Figure 3 As shown, the air-uniform slots 223 of the two air-cooling components 220 are not connected, thereby ensuring that the two air-cooling components 220 cool down their corresponding areas independently, with little mutual influence between the two, thereby improving the accuracy of temperature field control.

[0053] The cooling gas in the gas outlet groove 222 and the gas uniforming groove 223 can exchange heat with the second side wall 120. The gas outlet groove 222 and the gas uniforming groove 223 are both arranged in the second side wall 120, which can increase the heat exchange area with the second side wall 120 and improve the heat exchange efficiency.

[0054] Optional, such as Figure 4 As shown, the process chamber also includes a magnetic shielding plate 500, which can shield radio frequency leakage and avoid radiation hazards. The air-cooling component 220 is arranged on the second side wall 120, and the opening of the air outlet groove 222 is located on the outer surface of the second side wall 120. The magnetic shielding plate 500 covers the outer surface of the second side wall 120, and the magnetic shielding plate 500 has a plurality of air outlets, which correspond to the notches of the air outlet groove 222 one by one. The length of the air outlet can be the same as the length of the air outlet groove 222, and the width of the air outlet can be less than or equal to the width of the notch of the air outlet groove 222. The magnetic shielding plate 500 can also increase the flow resistance of the air-cooling gas, prevent a large amount of air-cooling gas from being discharged from the air outlet groove 222 close to the air inlet pipe 221, and make the air-cooling gas more evenly distributed in each air outlet groove 222 of the air-cooling component 220, thereby improving the uniformity of the temperature field distribution.

[0055] Optionally, the gas-uniform groove 223 is located on the side of the gas outlet groove 222 away from the magnetic shielding plate 500. The magnetic shielding plate 500 is provided with a gas outlet, and the air-cooled gas is discharged from the gas outlet. The gas-uniform groove 223 is located on the side of the gas outlet groove 222 away from the magnetic shielding plate 500, and the air-cooled gas first enters the bottom of the gas outlet groove 222 from the gas-uniform groove 223, and is evenly distributed in the gas outlet groove 222 before being discharged from the gas outlet. The position of the gas-uniform groove 223 can prolong the residence time of the air-cooled gas in the gas outlet groove 222, thereby improving the heat exchange effect.

[0056] like Figure 3 As shown, the air-leveling grooves 223 and the air-outlet grooves 222 of the two air-cooling components 220 correspond to the heating components 300 at the two top corners of the second side wall 120 respectively. The air-outlet grooves 222 of the two air-cooling components are arranged in a horizontal direction and cover the second side wall 120. The air-leveling grooves 223 of the two air-cooling components are located on the same straight line and are spaced apart from each other. The air inlet pipes 221 of the two air-cooling components are respectively connected to the ends of the two air-leveling grooves 223 that are away from each other. The cooling gas enters the two air-leveling grooves 223 through the two air inlet pipes 221 respectively, and flows in opposite directions along the two air-leveling grooves 223. The process gas enters each air-outlet groove 222 in turn, and is finally discharged from the air outlet corresponding to each air-outlet groove 222. The opposite end of the two air-leveling grooves 223 is farther away from the heating component 300, and the temperature is lower; the end that is away from each other is closer to the heating component 300 and the temperature is higher. The temperature of the cooling gas is usually low, and the process of the cooling gas flowing along the air-uniform groove 223 is a heating process. The heat exchange efficiency of the cooling gas is higher at the ends of the two air-uniform grooves 223 that are far away from each other, and more heat can be removed; the heat exchange efficiency of the cooling gas is reduced at the ends of the two air-uniform grooves 223 that are close to each other, and less heat is removed, which can achieve the effect of a uniform temperature field.

[0057] In some embodiments, Figure 2 and Figure 5 As shown, the first side wall 110 has a liquid cooling groove 111 arranged around the maintenance port, and the liquid cooling component 210 includes a liquid cooling pipe 211, a liquid inlet pipe 213 and a liquid outlet pipe 212. The liquid cooling pipe 211 is arranged in the liquid cooling groove 111, and the liquid inlet pipe 213 and the liquid outlet pipe 212 are respectively connected to the two ends of the liquid cooling pipe 211. The liquid cooling component 210 also includes a fixing member for fixing the liquid cooling pipe 211 in the liquid cooling groove 111.

[0058] Optionally, the fixing member is a pressing block 112, which is fixedly connected to the first side wall 110 of the chamber body 100 by screws 114, thereby pressing and fixing the liquid cooling pipe 211 in the liquid cooling tank 111. Figure 2 and Figure 5As shown, the liquid cooling groove 111 may be a groove with an arc-shaped cross section, and the liquid inlet pipe 213 may be arranged in the liquid cooling groove 111. The cross-sectional shape of the liquid cooling groove 111 may be close to the shape of the liquid cooling pipe 211. When arranged in the liquid cooling groove 111, the outer wall of the liquid cooling pipe 211 fits with the inner wall of the liquid cooling groove 111, thereby increasing the contact area between the liquid inlet pipe 213 and the liquid cooling groove 111, and improving the heat exchange efficiency between the liquid inlet pipe 213 and the liquid cooling groove 111. The liquid cooling pipe 211 is arranged inside the first side wall 110, which can improve the heat exchange effect between the liquid cooling pipe 211 and the first side wall 110, thereby improving the accuracy of the temperature control of the first side wall 110.

[0059] Optionally, the first side wall 110 is further provided with two receiving grooves extending from the liquid cooling groove 111 in a direction away from the maintenance opening, and the liquid inlet pipe 213 and the liquid outlet pipe 212 are respectively provided in the two receiving grooves. The liquid inlet pipe 213 and the liquid outlet pipe 212 are respectively connected to the two ends of the liquid cooling pipe 211, and the coolant enters the liquid cooling pipe 211 from the liquid inlet pipe 213 and flows out from the liquid outlet pipe 212. The coolant circulates and exchanges heat with the first side wall 110, thereby reducing the temperature of the first side wall 110.

[0060] The first side wall 110 is further provided with a plurality of fixing grooves 113 arranged along the liquid cooling groove 111. Figure 5 As shown, the liquid cooling tank 111 is located on the center line of the bottom of the fixed tank 113, and the pressing block 112 can be installed in the fixed tank 113 to press and fix the liquid cooling tube 211 in the liquid cooling tank 111. The pressing block 112 can make the liquid cooling tube 211 fit tightly with the liquid cooling tank 111, thereby improving the heat exchange efficiency between the two. Of course, the user can also use other methods to fix the liquid cooling tube 211, which is not limited here.

[0061] Optionally, the heating assembly 300, the temperature measuring assembly 400 and the air cooling assembly 220 on the side away from the first side wall 110 are respectively the first heating assembly 300, the first temperature measuring assembly 400 and the first air cooling assembly 220, and the heating assembly 300, the temperature measuring assembly 400 and the air cooling assembly 220 on the side close to the first side wall 110 are respectively the second heating assembly 300, the second temperature measuring assembly 400 and the second air cooling assembly 220. The control mechanism can control the corresponding first air cooling assembly 220 or the first heating assembly 300 to start according to the measurement results of the two first temperature measuring assemblies 400, so that the corresponding preset area is maintained at a preset temperature. The control mechanism can control the corresponding second air cooling assembly 220 and the liquid cooling assembly 210 to start to cool down according to the measurement results of the two second temperature measuring assemblies 400, or control the corresponding second heating assembly 300 to start to heat up, so that the corresponding preset area is maintained at a preset temperature.

[0062] For example, Figure 6As shown, when the preset temperatures of the four preset areas of the chamber body 100 are all T0, that is, 60°C. If a first temperature measuring component 400 measures that the current temperature T1 of the corresponding preset area is 68°C, the corresponding first air cooling component 220 can be started. At the same time, according to the difference T2 between the current temperature T1 and the preset temperature T0, the control mechanism can adjust the amount of air cooling. The air cooling flow rate is related to the size of the difference T2, and the user can derive the relationship between the two based on the cumulative test. When T2 is 0, the air cooling component 220 is turned off.

[0063] When the two second temperature measuring components 400 simultaneously measure T2>0, the two second air cooling components 220 are started, and the liquid cooling component 210 is simultaneously turned on. The coolant circulates continuously to assist in temperature control of the process chamber. When one of the two second temperature measuring components 400 measures T2≤0, the liquid cooling component 210 is turned off.

[0064] When any temperature measuring component 400 measures that the current temperature T1 is lower than the preset temperature T0, that is, T2 < 0, the corresponding heating component 300 turns on the power to heat and control the temperature of the chamber body 100. At the same time, different difference values ​​T2 correspond to different powers of the heating component 300, and the power output of the heating component 300 can be controlled according to the size of the difference, thereby achieving flexible temperature control. The corresponding relationship between the difference and the power of the heating component 300 can be obtained based on cumulative tests. Of course, users can also use other temperature control logics as needed, which is not limited here.

[0065] The present application also provides semiconductor process equipment, including a transfer platform 02 and a process chamber 01, wherein the process chamber 01 includes the process chamber in any one of the above-mentioned embodiments, and the process chamber has a wafer transfer port connected to the transfer platform 02, and the transfer platform 02 is used to transfer wafers between each process chamber 01.

[0066] like Figure 7 In the specific embodiment shown, there are four process chambers 01, which are arranged on the periphery of the transmission platform 02. One side of the chamber body 100 of the process chamber 01 is in contact with the transmission platform 02, and the side wall can exchange heat with the transmission platform 02 to improve temperature uniformity. The other three side walls are all provided with cooling components 200, which can improve the uniformity of the temperature field in the process chamber 01, thereby improving the stability and uniformity of wafer processing. Of course, the user can set cooling components 200 on all four side walls, which is not limited here.

[0067] The side wall of the chamber body 100 that is in contact with the transmission platform 02 is provided with a wafer transfer port, through which the wafer can be moved between the transmission platform 02 and the process chamber 01. In addition, the semiconductor process equipment also includes an equipment front-end module 03 and a loading chamber (Loadlock) 04. The equipment front-end module 03 receives the wafers to be processed and carries the processed wafers. The number of loading chambers 04 can be two, one of which is used to transfer the wafers to be processed into the transmission platform 02, and the other loading chamber 04 transfers the processed wafers from the transmission platform 02 to the equipment front-end module 03. The transmission platform 02 can be provided with devices such as manipulators for transferring wafers between each process chamber 01. The structures of other parts of the semiconductor process equipment can refer to the prior art and will not be repeated here.

[0068] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A process chamber, characterized in that: It comprises a chamber body, a heating component for heating a preset area of ​​the chamber body, and a temperature measuring component for measuring the current temperature of the preset area; The side wall of the chamber body is provided with a cooling component corresponding to the position of the heating component, and a cooling medium is passed through the cooling component to reduce the temperature of the preset area.

2. The process chamber according to claim 1, characterized in that: The cooling component includes an air cooling component and a liquid cooling component. The side walls of the chamber body include a first side wall provided with a maintenance port, two side walls adjacent to the first side wall are second side walls, and a third side wall facing away from the first side wall, wherein the third side wall is provided with a film transfer port. The liquid cooling component is arranged on the first side wall around the maintenance port, and each of the second side walls is provided with the air cooling component.

3. The process chamber according to claim 2, characterized in that: There are multiple temperature measuring components, the number of air cooling components is greater than or equal to the number of temperature measuring components, and each temperature measuring component corresponds to at least one air cooling component.

4. The process chamber according to claim 3, characterized in that: There are four temperature measuring components, which are arranged one by one at the four corners of the chamber body; The number of the heating components is four, and the heating components are arranged one by one at the four vertex corners of the chamber body.

5. The process chamber according to claim 4, characterized in that: Each of the second side walls is provided with two of the air cooling components, and the positions of the two air cooling components on the same second side wall respectively correspond to the two temperature measuring components on the top of the second side wall; The process chamber controls the air cooling component corresponding to the temperature measuring component according to the current temperature measured by the temperature measuring component.

6. The process chamber according to claim 2, characterized in that: The air cooling component includes an air cooling channel and an air inlet pipe. The air cooling channel includes a plurality of air outlet grooves arranged in parallel and an air uniforming groove connected to each of the air outlet grooves. The openings of the air outlet grooves are away from the inner side of the chamber body, and the air uniforming grooves are connected to the air inlet pipe.

7. The process chamber according to claim 6, characterized in that: The gas uniforming groove is perpendicular to each of the gas outlet grooves and passes through the midpoint of each of the gas outlet grooves in the length direction.

8. The process chamber according to claim 2, characterized in that: The first side wall has a liquid cooling groove arranged around the maintenance port, and the liquid cooling assembly includes a liquid cooling pipe, a liquid inlet pipe and a liquid outlet pipe. The liquid cooling pipe is arranged in the liquid cooling groove, and the liquid inlet pipe and the liquid outlet pipe are respectively connected to both ends of the liquid cooling pipe.

9. The process chamber according to claim 6, characterized in that: It also includes a magnetic shielding plate, which covers the outer surface of the second side wall. The magnetic shielding plate has a plurality of air outlets, and the air outlets correspond one by one to the notches of the air outlet groove.

10. A semiconductor process equipment, characterized in that: It comprises a transfer platform and a process chamber, wherein the process chamber comprises the process chamber according to any one of claims 1 to 9, wherein the process chamber has a wafer transfer port connected to the transfer platform, and the transfer platform is used to transfer wafers between the process chambers.

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