Driving circuit of power semiconductor device
By designing the protection unit to disconnect the branch of the failure capacitor unit in the driving circuit of the power semiconductor device, the shutdown failure problem caused by capacitor breakdown failure in the prior art is solved, and the reliability of the system is improved.
Patent Information
- Application Number
- CN202520610385.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-02
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2035-04-02
AI Technical Summary
In the driving circuit of existing power semiconductor devices, when a capacitor unit breaks down failure occurs, all shutdown submodules will be short-circuited at the same time, resulting in shutdown failure of power semiconductor devices and low system reliability.
A driving circuit for a power semiconductor device is designed, wherein the shutdown module comprises a plurality of shutdown submodules in parallel, each shutdown submodule comprising a capacitance unit and a protection unit. When the capacitor unit fails, the protection unit disconnects the branch circuit of the failed capacitor unit to avoid short circuits.
When one capacitor in the shutdown module fails, the failure capacitor is disconnected through the protection unit, and the other capacitors can still maintain a negative voltage normally. The power semiconductor device can be turned off normally, improving the reliability of the system.
Smart Images
Figure CN222916007U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of electronic circuits, in particular to a driving circuit of a power semiconductor device. Background Art
[0002] The existing driving circuit of the power semiconductor device (such as IGCT) includes the power semiconductor device, a shut-down module, an opening module, and a maintaining module. The shut-down module, the opening module, and the maintaining module realize the switching operation function of the power semiconductor device.
[0003] The power semiconductor device is a current-driven IGCT device. When the gate current I is injected through the gate G and flows out through the cathode K, G When the threshold is exceeded, the anode A and cathode K will be triggered to conduct, even if the anode current I A Maximum, anode-cathode voltage V AK Still close to zero.
[0004] The shutdown module is connected in parallel between the gate G and cathode K of the power semiconductor device. It is usually composed of a switch group and a negative voltage shutdown capacitor group in series. When the switch group is closed, the negative voltage shutdown capacitor group provides a reverse voltage bias for the gate cathode to ensure that the power semiconductor device is reliably shut down, and a high resistance state is present between the anode A and the cathode K. These switch groups are usually composed of a large number of normally open switches in parallel. They will only be closed when the drive power supply is working normally and receiving a control instruction. Otherwise, they are in an open circuit state, and the negative voltage of the shutdown capacitor group cannot act on the power semiconductor device. The shutdown capacitor group outputs a large current of several thousand amperes instantly when the device is turned off. In order to reduce voltage fluctuations, a large number of electrolytic capacitors are generally connected in parallel to increase the capacity. When one of the electrolytic capacitors fails due to breakdown due to long-term operation, other capacitors in the capacitor group will also be short-circuited at the same time, causing the shutdown capacitor group to be unable to maintain negative voltage, resulting in shutdown failure of the power semiconductor device and low system reliability. Utility Model Content
[0005] The main purpose of the utility model is to provide a driving circuit for a power semiconductor device, so as to at least solve the problem in the prior art that when a capacitor unit in the driving circuit of the power semiconductor device fails due to breakdown, all shutdown sub-modules will be short-circuited at the same time, causing shutdown failure of the power semiconductor device and low system reliability.
[0006] In order to achieve the above-mentioned purpose, according to one aspect of the utility model, a driving circuit of a power semiconductor device is provided, comprising an opening module and a maintaining module, and also comprising a shutoff module, wherein the first ends of the opening module, the shutoff module and the maintaining module are all connected to the gate of the power semiconductor device, and the second ends of the opening module, the shutoff module and the maintaining module are all connected to the cathode of the power semiconductor device; the shutoff module comprises a plurality of shutoff sub-modules connected in parallel, and the shutoff sub-module comprises a capacitor unit and a protection unit, and the protection unit disconnects the branch where the failed capacitor unit is located when the capacitor unit fails.
[0007] Optionally, the protection unit includes: a current sensor electrically connected to the capacitor unit and used to collect the current of the capacitor unit; a comparator electrically connected to the current sensor and used to compare the current of the capacitor unit with a preset current threshold; a latch electrically connected to the comparator and used to latch the comparison result of the comparator and transmit a shutdown signal to the switch module when the current of the capacitor unit is greater than the preset current threshold; the switch module, wherein a first end of the switch module is electrically connected to the capacitor unit, a second end of the switch module is electrically connected to the gate or cathode of the power semiconductor device, a control end of the switch module is electrically connected to the latch, and the switch module is used to disconnect when the current of the capacitor unit is greater than the preset current threshold.
[0008] Optionally, the switch module is a MOS device.
[0009] Optionally, the protection unit is a fuse.
[0010] Optionally, the shutdown module further includes: a switch group, a first end of the switch group is electrically connected to the gate of the power semiconductor device, and a second end of the switch group is electrically connected to each of the shutdown sub-modules.
[0011] Optionally, the activation module includes: a first power module, including a power sub-module and a first switching device connected in series, the positive electrode of the power sub-module being electrically connected to the first end of the first switching device and the cathode of the power semiconductor device respectively; a first diode, the anode of the first diode being electrically connected to the negative electrode of the power sub-module; a second switching device, the first end of the second switching device being electrically connected to the anode of the first diode; a first rectifier module, the first end of the first rectifier module being electrically connected to the second end of the first switching device, the second end of the first rectifier module being electrically connected to the gate of the power semiconductor device, and the third end of the first rectifier module being electrically connected to the second end of the second switching device; a third switching device, the first end of the third switching device being electrically connected to the anode of the first diode; a second rectifier module, the first end of the second rectifier module being electrically connected to the second end of the first switching device, the second end of the second rectifier module being electrically connected to the gate of the power semiconductor device, and the third end of the second rectifier module being electrically connected to the second end of the third switching device.
[0012] Optionally, the first rectifier module includes a first inductor and a second diode connected in series, the first end of the first inductor is electrically connected to the second end of the first switching device, the second end of the first inductor is electrically connected to the anode of the second diode and the second end of the second switching device respectively, and the cathode of the second diode is electrically connected to the gate of the power semiconductor device; the second rectifier module includes a second inductor and a third diode connected in series, the first end of the second inductor is electrically connected to the second end of the first switching device, the second end of the second inductor is electrically connected to the anode of the third diode and the second end of the third switching device respectively, and the cathode of the third diode is electrically connected to the gate of the power semiconductor device.
[0013] Optionally, the maintenance module includes: a second power supply module; a boost chopper circuit, a first end of the boost chopper circuit is electrically connected to the positive pole of the second power supply module, a second end of the boost chopper circuit is electrically connected to the negative pole of the second power supply module, the boost chopper circuit includes a fourth switch device and a sampling module, the sampling module is used to collect the current value in the loop; an FPGA module, a first end of the FPGA module is electrically connected to the sampling module in the boost chopper circuit, a second end of the FPGA module is electrically connected to the fourth switch device in the boost chopper circuit, and the FPGA module controls the fourth switch device to turn on or off according to the current value collected by the sampling module.
[0014] Optionally, the boost chopper circuit includes: a third inductor, a first end of the third inductor is electrically connected to the positive electrode of the second power module; a fourth switch device, a first end of the fourth switch device is electrically connected to the second end of the third inductor, a second end of the fourth switch device is electrically connected to the negative electrode of the second power module, and a control end of the fourth switch device is electrically connected to the second end of the FPGA module; a fourth diode, an anode of the fourth diode is electrically connected to the second end of the third inductor; an energy storage capacitor, a first end of the energy storage capacitor is electrically connected to the cathode of the fourth diode, and a second end of the energy storage capacitor is electrically connected to the first end of the third inductor and the cathode of the power semiconductor device respectively; a fourth inductor, a first end of the fourth inductor is electrically connected to the first end of the energy storage capacitor; a sampling module, a first end of the sampling module is electrically connected to the second end of the fourth inductor; a fifth switch device, a first end of the fifth switch device is electrically connected to the second end of the sampling module, and a second end of the fifth switch device is electrically connected to the gate of the power semiconductor device.
[0015] Optionally, the power semiconductor device is one of an integrated gate-commutated thyristor, an emitter-turn-off thyristor, a MOSFET or an IGBT.
[0016] Applying the technical solution of the utility model, the driving circuit of the power semiconductor device includes an opening module, a maintaining module and a shutoff module. The first ends of the opening module, the shutoff module and the maintaining module are all connected to the gate of the power semiconductor device, and the second ends of the opening module, the shutoff module and the maintaining module are all connected to the cathode of the power semiconductor device; the shutoff module includes a plurality of parallel shutoff submodules, the shutoff submodule includes a capacitor unit and a protection unit, and the protection unit disconnects the branch where the failed capacitor unit is located when the capacitor unit fails. When one capacitor in the shutoff module of the driving circuit fails, the protection unit disconnects the connection of the failed capacitor in the parallel circuit, and the other capacitors still maintain the negative voltage normally, and the power semiconductor device is shut down as usual, so as to solve the problem in the prior art that when a capacitor unit in the driving circuit of the power semiconductor device fails due to breakdown, all the shutoff submodules will be short-circuited at the same time, causing the shutdown failure of the power semiconductor device and low system reliability. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:
[0018] Figure 1 A schematic structural diagram of a driving circuit of a power semiconductor device provided in an embodiment of the utility model is shown;
[0019] Figure 2 A schematic structural diagram of a shutdown module of a driving circuit of a power semiconductor device provided according to an embodiment of the utility model is shown;
[0020] Figure 3 A schematic structural diagram of a shutdown module of another driving circuit of a power semiconductor device provided according to an embodiment of the utility model is shown;
[0021] Figure 4 A schematic structural diagram of an opening module of a driving circuit of a power semiconductor device provided according to an embodiment of the utility model is shown;
[0022] Figure 5 A schematic structural diagram of a maintenance module of a driving circuit of a power semiconductor device provided according to an embodiment of the utility model is shown.
[0023] The above drawings include the following reference numerals:
[0024] 01. Driving circuit of power semiconductor device; 02. Power semiconductor device; 10. Opening module; 11. First power module; 111. Power submodule; 12. First rectifier module; 13. Second rectifier module; 20. Maintaining module; 21. Second power module; 22. Boost chopper circuit; 23. FPGA module; 24. Sampling module; 30. Shutdown module; 31. Shutdown submodule; 32. Capacitor unit; 33. Protection unit; 331. Current sensor; 332. Comparator; 333. Latch; 334. Switch module; 335. Switch group; Q 0 , a first switching device; Q 1 , the second switching device; Q 2 , the third switching device; Q 3 , the fourth switching device; Q 4 , the fifth switching device; D 0 , the first diode; D 1 , the second diode; D 2 , the third diode; D 3 , the fourth diode; L 1 , the first inductor; L 2 , the second inductor; L 3 , the third inductor; L 4 , the fourth inductor; C, the energy storage capacitor. DETAILED DESCRIPTION
[0025] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0026] In order to enable those skilled in the art to better understand the solution of the utility model, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.
[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of the utility model and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the utility model described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions.
[0028] As introduced in the background technology, the shutdown module of the drive circuit of the power semiconductor device (such as IGCT) in the prior art is connected in parallel between the gate G and the cathode K of the power semiconductor device, and is usually composed of a switch group and a negative voltage shutdown capacitor group in series. When the switch group is closed, the negative voltage shutdown capacitor group provides a reverse voltage bias for the gate cathode to ensure that the power semiconductor device is reliably shut down, and a high resistance state is present between the anode A and the cathode K. These switch groups are usually composed of a large number of normally open switches in parallel. They will only be closed when the driving power supply works normally and receives a control instruction, otherwise they are in an open circuit state, and the negative voltage of the shutdown capacitor group cannot act on the power semiconductor device. The shutdown capacitor group outputs a large current of several thousand amperes instantly when the device is turned off. In order to reduce voltage fluctuations, a large number of electrolytic capacitors are generally connected in parallel to increase the capacity. When one of the electrolytic capacitors fails due to breakdown due to long-term operation, other capacitors in the capacitor group will also be short-circuited at the same time, causing the shutdown capacitor group to be unable to maintain a negative voltage, resulting in shutdown failure of the power semiconductor device and low system reliability.
[0029] In order to solve the problem in the prior art that when a capacitor unit in a driving circuit of a power semiconductor device fails due to breakdown, all shutdown sub-modules will be short-circuited at the same time, causing shutdown failure of the power semiconductor device and low system reliability, an embodiment of the utility model provides a driving circuit for a power semiconductor device.
[0030] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0031] Figure 1 FIG. 1 is a schematic diagram of a driving circuit of a power semiconductor device provided in an embodiment of the present utility model. Figure 1As shown, in this embodiment, a driving circuit 01 of a power semiconductor device is provided, including an opening module 10 and a maintaining module 20, and also including a shutoff module 30, wherein the first ends of the opening module 10, the shutoff module 30 and the maintaining module 20 are all connected to the gate of the power semiconductor device 02, and the second ends of the opening module 10, the shutoff module 30 and the maintaining module 20 are all connected to the cathode of the power semiconductor device 02; the shutoff module 30 includes a plurality of parallel shutoff sub-modules 31, and the shutoff sub-module 31 includes a capacitor unit 32 and a protection unit 33, and the protection unit 33 disconnects the branch where the failed capacitor unit 32 is located when the capacitor unit 32 fails.
[0032] Among them, the shutdown module is connected in parallel between the gate G and cathode K of the power semiconductor device, and is usually composed of a switch group and a negative voltage shutdown capacitor group in series. When the switch group is closed, the negative voltage shutdown capacitor group provides a reverse voltage bias for the gate cathode to ensure that the power semiconductor device is reliably shut down, and a high resistance state is present between the anode A and the cathode K. These switch groups are usually composed of a large number of normally open switches in parallel. They will only be closed when the driving power supply is working normally and receiving control instructions. Otherwise, they are in an open circuit state, and the negative voltage of the shutdown capacitor group cannot act on the power semiconductor device. The shutdown capacitor group instantly outputs a large current of several thousand amperes when the device is turned off. In order to reduce voltage fluctuations, a large number of electrolytic capacitors are generally connected in parallel to increase the capacity.
[0033] The turn-on module and the holding module are also connected in parallel between the gate G and cathode K of the power semiconductor device, and are usually composed of a switch group and a current source in series. When the switch group is closed, the current sources of the turn-on module and the holding module respectively inject steep wave strong trigger current pulses and constant amplitude holding current into the gate G to ensure that the power semiconductor device is reliably and evenly turned on, and the anode A and the cathode K are in a low resistance state.
[0034] In some examples, the power semiconductor device is one of an integrated gate-commutated thyristor, an emitter-turn-off thyristor, a MOSFET or an IGBT. In this embodiment, an integrated gate-commutated thyristor (IGCT) is taken as an example.
[0035] The driving circuit of the power semiconductor device of the utility model includes an opening module, a maintaining module and a shutoff module. The first ends of the opening module, the shutoff module and the maintaining module are all connected to the gate of the power semiconductor device, and the second ends of the opening module, the shutoff module and the maintaining module are all connected to the cathode of the power semiconductor device; the shutoff module includes a plurality of parallel shutoff submodules, and the shutoff submodule includes a capacitor unit and a protection unit. When the capacitor unit fails, the protection unit disconnects the branch where the failed capacitor unit is located. When one capacitor in the shutoff module fails, the driving circuit disconnects the connection of the failed capacitor in the parallel circuit through the protection unit, and the other capacitors still maintain the negative voltage normally, and the power semiconductor device is shut down as usual, so as to solve the problem in the prior art that when a capacitor unit fails in the driving circuit of the power semiconductor device, all the shutoff submodules will be short-circuited at the same time, causing the shutdown failure of the power semiconductor device and low system reliability.
[0036] In some instances, such as Figure 2 As shown, the protection unit includes: a current sensor 331, electrically connected to the capacitor unit 32, for collecting the current of the capacitor unit 32; a comparator 332, electrically connected to the current sensor 331, for comparing the current of the capacitor unit 32 with a preset current threshold; a latch 333, electrically connected to the comparator 332, for latching the comparison result of the comparator 332, and transmitting a shutdown signal to the switch module 334 when the current of the capacitor unit 32 is greater than the preset current threshold; the switch module 334, wherein a first end of the switch module 334 is electrically connected to the capacitor unit 32, a second end of the switch module 334 is electrically connected to the gate or cathode of the power semiconductor device, a control end of the switch module 334 is electrically connected to the latch 333, and the switch module 334 is used to disconnect when the current of the capacitor unit 32 is greater than the preset current threshold.
[0037] Among them, the first shutdown submodule to the nth shutdown submodule are connected in parallel to form a shutdown capacitor group. The switch group controls the switching of the shutdown capacitor group between the gate G and the cathode K. The current sensor obtains the capacitor current. When the capacitor current is greater than the preset threshold (the capacitor is considered to be failed), the output result of the comparator is latched in the latch. The latch continuously controls the switch module to disconnect, and the failed capacitor is removed from the parallel circuit. Other capacitors still maintain negative voltage normally, and the power semiconductor device is turned off as usual, with high system reliability.
[0038] In order to receive the shutdown signal transmitted by the latch, in some embodiments, the switch module is a MOS device. The switch module is not limited to the MOS device, but can also be a mechanical switch, etc., but needs to be able to receive the disconnection signal transmitted by the latch and perform the disconnection operation according to the shutdown signal.
[0039] In some instances, such as Figure 3 As shown, the protection unit 33 is a fuse.
[0040] Among them, the simplest way to disconnect the short-circuit capacitor is to integrate the current sensor, comparator, latch, and access switch into a fuse, that is, the protection unit is the fuse, and the current sensing is realized by converting the current into temperature, and the circuit is disconnected when the temperature exceeds the melting point to realize comparison, latching and switch control. In addition, high-reliability capacitors (MLCC, film capacitors, etc.) can be directly connected in parallel with the capacitor module.
[0041] In some instances, such as Figure 2 and Figure 3 As shown, the shutdown module 30 further includes: a switch group 335 , a first end of the switch group 335 is electrically connected to the gate of the power semiconductor device, and a second end of the switch group 335 is electrically connected to each of the shutdown sub-modules 31 .
[0042] Among them, when the switch group is closed, the negative voltage shutdown capacitor group provides a reverse voltage bias for the gate cathode to ensure that the power semiconductor device is reliably shut down, and a high resistance state is present between the anode A and the cathode K. These switch groups are usually composed of a large number of normally open switches in parallel. They will only be closed when the driving power supply is working normally and receiving control instructions. Otherwise, they are in an open circuit state, and the negative voltage of the shutdown capacitor group cannot act on the power semiconductor device.
[0043] In some instances, such as Figure 4 As shown, the above-mentioned opening module includes: a first power module 11, including a power submodule 111 and a first switch device Q connected in series 0 The positive electrode of the power submodule 111 is connected to the first switch device Q 0 The first end of the first diode D is electrically connected to the cathode of the power semiconductor device 02; 0 , the first diode D 0 The anode of the second switching device Q is electrically connected to the negative electrode of the power submodule 111; 1 , the second switching device Q 1 The first end of the first diode D 0 A first rectifier module 12, a first end of the first rectifier module 12 and the first switching device Q 0 The second end of the first rectifier module 12 is electrically connected to the gate of the power semiconductor device 02, and the third end of the first rectifier module 12 is electrically connected to the second switch device Q 1 The second end of the third switching device Q is electrically connected; 2 , the third switching device Q 2 The first end of the first diode D0 A second rectifier module 13, a first end of the second rectifier module 13 and the first switching device Q 0 The second end of the second rectifier module 13 is electrically connected to the gate of the power semiconductor device 02, and the third end of the second rectifier module 13 is electrically connected to the gate of the third switch device Q 2 The second end is electrically connected to
[0044] The power submodule is used to charge the first rectifier module and the second rectifier module. After receiving the opening command, the first switch device Q 0 , the second switching device Q 1 , the third switching device Q 2 The power submodule is turned on at the same time. 0 , the second switching device Q 1 , the third switching device Q 2 The first rectifier module and the second rectifier module are charged. When the current in the first rectifier module reaches the set value, the second switch device Q 1 The first rectifier module discharges to the gate and cathode of the IGCT, thereby forming a strong IGCT turn-on trigger pulse current. When the current in the second rectifier module reaches the set value, the third switch device Q 2 When the IGCT is turned off, the second rectifier module discharges to the gate and cathode of the IGCT, thereby forming a strong turn-on trigger pulse current for the IGCT to ensure reliable turn-on of the IGCT.
[0045] In some instances, such as Figure 4 As shown, the first rectifier module 12 includes a first inductor L connected in series. 1 and the second diode D 1 , the first inductor L 1 The first end of the first switching device Q 0 The second end of the first inductor L is electrically connected to 1 The second end of each of the second diode D 1 The anode of the second switching device Q 1 The second end of the second diode D 1 The cathode is electrically connected to the gate of the power semiconductor device 02; the second rectifier module 13 includes a second inductor L connected in series 2 and the third diode D 2 , the second inductor L 2 The first end of the first switching device Q 0 The second end of the second inductor L is electrically connected to 2 The second end of each of the third diode D 2 anode and the third switching device Q2 The second end of the third diode D is electrically connected to 2 The cathode of the power semiconductor device 0 2 The gate electrical connection.
[0046] Among them, according to the opening principle of power semiconductor devices (taking IGCT as an example), the driving circuit is required to provide a current pulse with a very high rise rate and amplitude to the gate in a very short time. Figure 4 As shown, after receiving the opening command, Q 0 , Q 1 , Q 2 The power submodule 111 is an internal 20V regulated power supply Ugk, which is connected to the 0 , Q 1 , Q 2 For L 1 , L 2 Charging. When L 1 When the current in reaches the set value, Q 1 Shutdown, L 1 So through D 1 , the gate and cathode of the IGCT discharge, thus forming a strong IGCT turn-on trigger pulse current. 2 When the current in reaches the set value, Q 2 Shutdown, L 2 So through D 2 , the gate and cathode discharge of IGCT, thereby forming a strong opening trigger pulse current of IGCT, ensuring the reliable opening of IGCT.
[0047] In actual circuit design, D 1 Synchronous rectifiers are used instead of diodes. As mentioned earlier, L 1 Generates the most important strong trigger current pulse. In order to ensure the rising rate of gate current, L 1 The gate impedance of the loop must be minimized. In order to reduce the on-resistance, several MOSFETs can be connected in parallel to form a synchronous rectifier to further reduce the on-resistance.
[0048] In some instances, such as Figure 5 As shown, the above-mentioned maintenance module includes: a second power supply module 21; a boost chopper circuit 22, a first end of the above-mentioned boost chopper circuit 22 is electrically connected to the positive electrode of the above-mentioned second power supply module 21, a second end of the above-mentioned boost chopper circuit 22 is electrically connected to the negative electrode of the above-mentioned second power supply module 21, and the above-mentioned boost chopper circuit 22 includes a fourth switch device Q 3and a sampling module 24, the sampling module 24 is used to collect the current value in the loop; an FPGA module 23, a first end of the FPGA module 23 is electrically connected to the sampling module 24 in the boost chopper circuit 22, and a second end of the FPGA module 23 is electrically connected to the fourth switch device Q in the boost chopper circuit 22 3 The FPGA module 23 controls the fourth switch device Q according to the current value collected by the sampling module 24. 3 On or off.
[0049] Among them, the sampling module is generally a sampling resistor. After the IGCT is turned on, in order to ensure that the IGCT can still remain on when the anode current is less than the holding current, the drive circuit will always keep the gate forward biased and provide the gate with a suitable on-state gate holding current. The corresponding circuit is called an on-state gate holding module.
[0050] Unlike other switching power supplies, the maintenance module uses PWM pulses issued by the FPGA logic control chip. The high-end current detection chip INA 168 detects the size of the maintenance current and sends the feedback signal GCFB to the FPGA. When the current is less than 6 A, GCFB inputs a low level, and the FPGA adjusts the pulse width to 2.2μs. When the current is greater than 10A, GCFB inputs a high level, and the FPGA adjusts the pulse width to 0.7. Through this hysteresis current control, the current response is fast and the ripple is greatly reduced. The circuit design is also relatively simple. The maintenance circuit also adopts a synchronous rectification design. Unlike the strong opening circuit, it uses a control pulse with dead time issued by the FPGA and a voltage-type external drive method.
[0051] In some instances, such as Figure 5 As shown, the boost chopper circuit 22 includes: a third inductor L 3 , the third inductor L 3 The first end of the fourth switch device Q is electrically connected to the positive electrode of the second power module 21; 3 , the fourth switching device Q 3 The first end of the third inductor L 3 The second end of the fourth switching device Q is electrically connected to 3 The second end of the fourth switch device Q is electrically connected to the negative electrode of the second power module 21. 3 The control end of the fourth diode D is electrically connected to the second end of the FPGA module 23; 3 , the fourth diode D 3 The anode of the third inductor L 3 The second end of the energy storage capacitor C is electrically connected to the fourth diode D 3The cathode of the energy storage capacitor C is electrically connected to the cathode of the energy storage capacitor C, and the second end .... 3 The first end of the fourth inductor L is electrically connected to the cathode of the power semiconductor device 02; 4 , the fourth inductor L 4 The first end of the sampling module 24 is electrically connected to the first end of the energy storage capacitor C; the first end of the sampling module 24 is electrically connected to the fourth inductor L 4 The second end of the fifth switching device Q is electrically connected; 4 , the fifth switching device Q 4 The first end of the fifth switch device Q is electrically connected to the second end of the sampling module 24. 4 The second end is electrically connected to the gate of the power semiconductor device 02.
[0052] Among them, L 3 , L 4 , C, D 3 , Q 3 , Q 4 The boost chopper circuit provides an output current of 8 A and an output voltage of 21 V. 4 It is the main switch of the maintenance circuit. When the maintenance circuit stops working, Q 4 When the IGCT is in the off state, the gate is grounded. 4 Disconnection prevents the 20 V from being shorted directly to ground.
[0053] D 3 Synchronous rectification technology is used. According to the previous analysis, it adopts a similar voltage-type self-driving method. However, it is different from the open circuit in that it is connected in parallel with a diode. The diode ensures that even when the driving synchronous rectifier fails, the current still has a path. Its control pulse is a synchronous rectification pulse issued by the FPGA, and the potential is increased by using the bootstrap circuit.
[0054] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0055] From the above description, it can be seen that the above embodiments of the utility model achieve the following technical effects:
[0056] The driving circuit of the power semiconductor device of the utility model includes an opening module, a maintaining module and a shutoff module. The first ends of the opening module, the shutoff module and the maintaining module are all connected to the gate of the power semiconductor device, and the second ends of the opening module, the shutoff module and the maintaining module are all connected to the cathode of the power semiconductor device; the shutoff module includes a plurality of parallel shutoff submodules, and the shutoff submodule includes a capacitor unit and a protection unit. When the capacitor unit fails, the protection unit disconnects the branch where the failed capacitor unit is located. When one capacitor in the shutoff module fails, the driving circuit disconnects the connection of the failed capacitor in the parallel circuit through the protection unit, and the other capacitors still maintain the negative voltage normally, and the power semiconductor device is shut down as usual, so as to solve the problem in the prior art that when a capacitor unit fails in the driving circuit of the power semiconductor device, all the shutoff submodules will be short-circuited at the same time, causing the shutdown failure of the power semiconductor device and low system reliability.
[0057] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A driving circuit for a power semiconductor device, comprising an opening module and a maintaining module, characterized in that: Also includes a shutdown module, Wherein, the first ends of the opening module, the closing module and the maintaining module are all connected to the gate of the power semiconductor device, and the second ends of the opening module, the closing module and the maintaining module are all connected to the cathode of the power semiconductor device; The shutdown module includes a plurality of shutdown submodules connected in parallel, each of which includes a capacitor unit and a protection unit. When the capacitor unit fails, the protection unit disconnects the branch where the failed capacitor unit is located.
2. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The protection unit comprises: a current sensor, electrically connected to the capacitor unit, and used to collect the current of the capacitor unit; a comparator, electrically connected to the current sensor, and configured to compare the current of the capacitor unit with a preset current threshold; a latch, electrically connected to the comparator, for latching a comparison result of the comparator, and transmitting a shutdown signal to the switch module when the current of the capacitor unit is greater than the preset current threshold; The switch module, wherein the first end of the switch module is electrically connected to the capacitor unit, the second end of the switch module is electrically connected to the gate or cathode of the power semiconductor device, the control end of the switch module is electrically connected to the latch, and the switch module is used to disconnect when the current of the capacitor unit is greater than the preset current threshold.
3. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The switch module is a MOS device.
4. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The protection unit is a fuse.
5. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The shutdown module also includes: A switch group, wherein a first end of the switch group is electrically connected to the gate of the power semiconductor device, and a second end of the switch group is electrically connected to each of the shutdown sub-modules.
6. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The activation module includes: A first power module, comprising a power submodule and a first switch device connected in series, wherein a positive electrode of the power submodule is electrically connected to a first end of the first switch device and a cathode of the power semiconductor device respectively; a first diode, wherein an anode of the first diode is electrically connected to a cathode of the power submodule; a second switching device, a first terminal of the second switching device being electrically connected to an anode of the first diode; a first rectifier module, wherein a first end of the first rectifier module is electrically connected to a second end of the first switch device, a second end of the first rectifier module is electrically connected to a gate of the power semiconductor device, and a third end of the first rectifier module is electrically connected to a second end of the second switch device; a third switching device, a first terminal of the third switching device being electrically connected to an anode of the first diode; A second rectifier module, wherein the first end of the second rectifier module is electrically connected to the second end of the first switch device, the second end of the second rectifier module is electrically connected to the gate of the power semiconductor device, and the third end of the second rectifier module is electrically connected to the second end of the third switch device.
7. The driving circuit of the power semiconductor device according to claim 6, characterized in that: The first rectifier module includes a first inductor and a second diode connected in series, the first end of the first inductor is electrically connected to the second end of the first switch device, the second end of the first inductor is electrically connected to the anode of the second diode and the second end of the second switch device respectively, and the cathode of the second diode is electrically connected to the gate of the power semiconductor device; The second rectifier module includes a second inductor and a third diode connected in series, the first end of the second inductor is electrically connected to the second end of the first switching device, the second end of the second inductor is electrically connected to the anode of the third diode and the second end of the third switching device respectively, and the cathode of the third diode is electrically connected to the gate of the power semiconductor device.
8. The driving circuit of a power semiconductor device according to claim 1, characterized in that: The maintenance module comprises: A second power supply module; A boost chopper circuit, wherein a first end of the boost chopper circuit is electrically connected to a positive electrode of the second power module, a second end of the boost chopper circuit is electrically connected to a negative electrode of the second power module, the boost chopper circuit comprises a fourth switch device and a sampling module, and the sampling module is used to collect a current value in the loop; An FPGA module, wherein a first end of the FPGA module is electrically connected to a sampling module in the boost chopper circuit, a second end of the FPGA module is electrically connected to a fourth switching device in the boost chopper circuit, and the FPGA module controls the fourth switching device to be turned on or off according to a current value collected by the sampling module.
9. The driving circuit of the power semiconductor device according to claim 8, characterized in that: The boost chopper circuit comprises: a third inductor, wherein a first end of the third inductor is electrically connected to a positive electrode of the second power module; a fourth switch device, wherein a first end of the fourth switch device is electrically connected to the second end of the third inductor, a second end of the fourth switch device is electrically connected to the negative electrode of the second power module, and a control end of the fourth switch device is electrically connected to the second end of the FPGA module; a fourth diode, an anode of the fourth diode being electrically connected to the second end of the third inductor; An energy storage capacitor, wherein a first end of the energy storage capacitor is electrically connected to the cathode of the fourth diode, and a second end of the energy storage capacitor is electrically connected to the first end of the third inductor and the cathode of the power semiconductor device respectively; a fourth inductor, a first end of the fourth inductor being electrically connected to the first end of the energy storage capacitor; a sampling module, wherein a first end of the sampling module is electrically connected to a second end of the fourth inductor; A fifth switch device, wherein a first end of the fifth switch device is electrically connected to a second end of the sampling module, and a second end of the fifth switch device is electrically connected to a gate of the power semiconductor device.
10. The driving circuit of a power semiconductor device according to any one of claims 1 to 9, characterized in that: The power semiconductor device is one of an integrated gate commutated thyristor, an emitter turn-off thyristor, a MOSFET or an IGBT.