Driving circuit and control circuit

Abstract

The utility model relates to the technical field of power electronics, and discloses a driving circuit and a control circuit, which are used for providing adjustable driving resistors for an MOS (Metal Oxide Semiconductor) tube and an IGBT (Insulated Gate Bipolar Translator) respectively through a driving module, solving the problem that the driving resistors corresponding to the MOS tube and the IGBT respectively cannot be adjusted, and improving the efficiency of the driving circuit. The driving circuit comprises a control module, a driving module and a power module, the power module comprises an MOS tube and an IGBT, and the driving module is electrically connected with the control module and the power module. The control module is used for generating a target switch control instruction and a target driving signal according to a preset working condition; the driving module is used for adjusting a driving resistor connected with the MOS tube and / or a driving resistor connected with the IGBT according to the target switch control instruction, and transmitting a target driving signal to the MOS tube and the IGBT; and the power module is used for controlling the MOS tube and the IGBT to be switched on and switched off according to the received target driving signal instruction.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular, to a driving circuit and a control circuit. Background Art

[0002] Metal Oxide Semiconductor (MOS) transistors and Insulated Gate Bipolar Transistors (IGBTs) are both commonly used components on control boards. For a control system that simultaneously has MOS transistors and IGBTs, it is necessary to set the driving resistors for the MOS transistors and IGBTs.

[0003] In the traditional solution, a common driving resistor is used for MOS transistors and IGBTs. However, due to the different characteristics of MOS transistors and IGBTs, using a common driving resistor will make it difficult to adjust the driving parameters and increase the loss of the driving circuit. Therefore, in order to reduce the loss, driving resistors are usually set separately for MOS transistors and IGBTs. However, the driving resistors for MOS transistors and IGBTs are fixed values and cannot be adjusted, resulting in low efficiency of the driving circuit. Utility Model Content

[0004] This application provides a driving circuit and a control circuit, which are used to provide adjustable driving resistors for MOS transistors and IGBTs respectively through a driving module, solve the problem that the driving resistors corresponding to MOS transistors and IGBTs cannot be adjusted, and achieve the effect of improving the efficiency of the driving circuit.

[0005] In a first aspect of this application, a driving circuit is provided, including: a control module, a driving module, and a power module. The power module includes MOS transistors and IGBTs. The driving module is electrically connected to the control module and the power module respectively; the control module is configured to generate a target switch control instruction and a target driving signal according to preset working condition conditions; the driving module is configured to adjust the driving resistor connected to the MOS transistor and / or the driving resistor connected to the IGBT according to the target switch control instruction, and transmit the target driving signal to the MOS transistor and the IGBT; the power module is configured to control the MOS transistor and the IGBT to turn on and off according to the received target driving signal instruction.

[0006] In a feasible implementation manner, the driving module includes a driving resistor network and an analog switch network; the driving resistor network is configured to provide a series driving resistor for each analog switch in the analog switch network; the analog switch network is configured to provide a series analog switch for each driving resistor in the driving resistor network, and control the opening and closing of each analog switch in the analog switch network based on the target switch control instruction.

[0007] In a feasible implementation manner, the driving resistor network includes a first driving unit and a second driving unit, and the analog switch network includes a first switch unit and a second switch unit; the input end of the first driving unit is connected to the first output end of the control module, the output end of the first driving unit is connected to the input end of the first switch unit, and the output end of the first switch unit is connected to the gate of the IGBT; the input end of the second driving unit is connected to the second output end of the control module, the output end of the second driving unit is connected to the input end of the second switch unit, and the output end of the second switch unit is connected to the gate of the MOS transistor.

[0008] In a feasible implementation manner, the first driving unit includes a first diode, a second diode, a first IGBT resistor network, and a second IGBT resistor network. The first IGBT resistor network includes at least two parallel driving resistors, and the second IGBT resistor network includes at least two parallel driving resistors. The first switch unit includes a first IGBT switch network and a second IGBT switch network; the positive electrode of the first diode is connected to the first output end of the control module, the negative electrode of the first diode is connected to the first ends of the parallel driving resistors in the first IGBT resistor network, the second ends of the parallel driving resistors in the first IGBT resistor network are respectively connected to the first ends of the corresponding analog switches in the first IGBT switch network, and the second ends of the analog switches in the first IGBT switch network are connected to the gate of the IGBT; the negative electrode of the second diode is connected to the first output end of the control module, the positive electrode of the second diode is connected to the first ends of the parallel driving resistors in the second IGBT resistor network, the second ends of the parallel driving resistors in the second IGBT resistor network are respectively connected to the first ends of the corresponding analog switches in the second IGBT switch network, and the second ends of the analog switches in the second IGBT switch network are connected to the gate of the IGBT.

[0009] In a feasible implementation manner, the second driving unit includes a third diode, a fourth diode, a first MOS resistor network, and a second MOS resistor network. The first MOS resistor network includes at least two parallel driving resistors, and the second MOS resistor network includes at least two parallel driving resistors. The second switching unit includes a first MOS switching network and a second MOS switching network. The positive electrode of the third diode is connected to the second output terminal of the control module, and the negative electrode of the third diode is connected to the first ends of the parallel driving resistors in the first MOS resistor network. The second ends of the parallel driving resistors in the first MOS resistor network are respectively connected to the first ends of the corresponding analog switches in the first MOS switching network. The second ends of the analog switches in the first MOS switching network are connected to the gate of the IGBT. The negative electrode of the fourth diode is connected to the second output terminal of the control module, and the positive electrode of the fourth diode is connected to the first ends of the parallel driving resistors in the second MOS resistor network. The second ends of the parallel driving resistors in the second MOS resistor network are respectively connected to the first ends of the corresponding analog switches in the second MOS switching network. The second ends of the analog switches in the second MOS switching network are connected to the gate of the MOS transistor.

[0010] In a feasible implementation manner, the driving resistor network is used to control the response speed of the IGBT by adjusting the resistance value of the first driving unit, and is also used to control the response speed of the MOS transistor by adjusting the resistance value of the second driving unit. Among them, the larger the resistance value of the first driving unit, the slower the response speed of the corresponding IGBT; the larger the resistance value of the second driving unit, the slower the response speed of the corresponding MOS transistor.

[0011] In a feasible implementation manner, the control module includes an MCU and a driving IC. The MCU is electrically connected to the driving IC, the driving IC is electrically connected to the driving resistor network, and the MCU is electrically connected to the analog switching network. The MCU is used to generate corresponding target switch control instructions and initial driving signals according to different working conditions. The target switch control instructions are used to control the opening and closing of the respective analog switches in the analog switching network. The driving IC is used to generate target driving signals for driving the MOS transistor and the IGBT according to the initial driving signals.

[0012] In a feasible implementation manner, one driving resistor in the driving resistor network and one analog switch in the analog switching network form a driving branch.

[0013] In a feasible implementation manner, the power module includes the switching devices on each arm of the three-phase full-bridge inverter circuit.

[0014] The second aspect of the present application provides a control circuit, which includes the drive circuit and the main circuit in any of the embodiments of the first aspect above. The main circuit includes an EMI filter circuit, a film capacitor, and a three-phase full-bridge inverter circuit. The film capacitor is electrically connected to the EMI filter circuit and the three-phase full-bridge inverter circuit respectively. The main circuit is used to convert the direct current input from the EMI filter circuit into alternating current through the film capacitor and the three-phase full-bridge inverter circuit and output it. The drive circuit is used to control the turn-on and turn-off of the switching devices on each arm of the three-phase full-bridge inverter circuit.

[0015] In the technical solution provided by the present application, the drive circuit includes a control module, a drive module, and a power module. The power module includes MOS transistors and IGBTs. The drive module is electrically connected to the control module and the power module respectively. The control module is used to generate a target switch control instruction and a target drive signal according to preset operating conditions. The drive module is used to adjust the drive resistance connected to the MOS transistor and / or the drive resistance connected to the IGBT according to the target switch control instruction, and transmit the target drive signal to the MOS transistor and the IGBT. The power module is used to control the turn-on and turn-off of the MOS transistor and the IGBT according to the received target drive signal instruction. In the present application, by providing adjustable drive resistances for the MOS transistor and the IGBT respectively through the drive module, the problem that the drive resistances corresponding to the MOS transistor and the IGBT cannot be adjusted is solved, and the effect of improving the efficiency of the drive circuit is achieved. Description of the Drawings

[0016] Figure 1 It is a schematic structural diagram of a drive circuit in an embodiment of the present application;

[0017] Figure 2 It is another schematic structural diagram of a drive circuit in an embodiment of the present application;

[0018] Figure 3 It is another schematic structural diagram of a drive circuit in an embodiment of the present application. Detailed Embodiments

[0019] The present application provides a drive circuit and a control circuit, which are used to provide adjustable drive resistances for the MOS transistor and the IGBT respectively through the drive module, solve the problem that the drive resistances corresponding to the MOS transistor and the IGBT cannot be adjusted, and achieve the effect of improving the efficiency of the drive circuit.

[0020] In the description, claims and the above-mentioned drawings of the present application, the terms "first", "second", "third", "fourth", etc. (if any) are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present application described herein, for example, can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units need not be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0021] As Figure 1 shown, an embodiment of the present application provides a drive circuit, specifically including:

[0022] A control module 110, a drive module 120, and a power module 130. The power module 130 includes an MOS transistor 131 and an IGBT 132. The drive module 120 is electrically connected to the control module 110 and the power module 130 respectively;

[0023] The control module 110 is configured to generate a target switch control instruction and a target drive signal according to preset operating conditions;

[0024] The drive module 120 is configured to adjust the drive resistance connected to the MOS transistor 131 and / or the drive resistance connected to the IGBT 132 according to the target switch control instruction, and transmit the target drive signal to the MOS transistor 131 and the IGBT 132;

[0025] The power module 130 is configured to control the MOS transistor 131 and the IGBT 132 to turn on and off according to the received target drive signal instruction.

[0026] In the present application, by providing adjustable drive resistances for the MOS transistor and the IGBT respectively through the drive module, the problem that the drive resistances corresponding to the MOS transistor and the IGBT respectively cannot be adjusted is solved, and the efficiency of the drive circuit is improved.

[0027] It should be noted that the power module 130 includes both a MOS transistor 131 and an IGBT 132. The power module can be a partial circuit structure embedded in the main circuit. Therefore, by controlling the signal transmission speed of the control terminals (gates) of the MOS transistor 131 and the IGBT 132, the response speed of the MOS transistor 131 and the IGBT 132 can be controlled. For example, when the MOS transistor 131 needs to be turned on quickly, the value of the drive resistor connected to the gate of the MOS transistor 131 is reduced, thereby increasing the turn-on response speed; when the MOS transistor 131 needs to be turned off quickly, the value of the drive resistor connected to the gate of the MOS transistor 131 is reduced, thereby increasing the turn-off response speed.

[0028] In a feasible implementation manner, as Figure 2 shown, the drive module 120 includes a drive resistor network 121 and an analog switch network 122;

[0029] The drive resistor network 121 is configured to provide a series-connected drive resistor for each analog switch in the analog switch network 122;

[0030] The analog switch network 122 is configured to provide a series-connected analog switch for each drive resistor in the drive resistor network 121 and control the opening and closing of each analog switch in the analog switch network 122 based on a target switch control instruction.

[0031] It should be noted that the number of drive resistors in the drive resistor network 121 is the same as the number of analog switches in the analog switch network 122, that is, one drive resistor is correspondingly connected to one analog switch, so that the number of drive resistors connected to the power module 130 in the drive resistor network can be controlled by controlling the opening and closing of the analog switch.

[0032] It can be understood that the minimum number of driving resistors used to control the IGBT turn-on in the driving resistor network 121 is two, which can be changed according to the actual situation. The resistance values of each driving resistor can be the same or different. For the convenience of description, this application takes the case where the resistance values of the driving resistors are the same as an example. Suppose the number of driving resistors used to control the IGBT is two and the resistance value of each is R. Then, for the control terminal (gate) of the IGBT, when only one driving resistor is connected, the total connected resistance value is R; when both driving resistors are connected, the total connected resistance value is R / 2. Suppose again that the number of driving resistors used to control the IGBT is three and the resistance value of each is R. Then, for the control terminal (gate) of the IGBT, when any one driving resistor is connected, the total connected resistance value is R; when any two driving resistors are connected, the total connected resistance value is R / 2; when all three driving resistors are connected, the total connected resistance value is R / 3. The number of driving resistors can also be 4 or more, and the corresponding selectable range of the total resistance value will also change, which will not be elaborated here specifically. By increasing the number of resistors, the adjustable value corresponding to the total resistance value connected to the control terminal (gate) of the IGBT can be increased.

[0033] Figure 2 Each time 3 driving resistors are used to adjust the resistance value for the IGBT turn-on / off. Figure 2 This is only an example, and it can also be other numbers. For example, 2 or 4 driving resistors. When 2 driving resistors are connected to the control terminal of the IGBT / MOSFET each time, the driving resistor network 121 includes a total of 8 driving resistors; when 3 driving resistors are connected to the control terminal of the IGBT / MOSFET each time, the driving resistor network 121 includes a total of 12 driving resistors, as Figure 2 shown; when 4 driving resistors are connected to the control terminal of the IGBT / MOSFET each time, the driving resistor network 121 includes a total of 16 driving resistors.

[0034] In a feasible implementation manner, as Figure 2 shown, the driving resistor network 121 includes a first driving unit and a second driving unit, and the analog switch network 122 includes a first switch unit and a second switch unit;

[0035] The input end of the first driving unit is connected to the first output end of the control module, the output end of the first driving unit is connected to the input end of the first switch unit, and the output end of the first switch unit is connected to the gate of the IGBT;

[0036] The input end of the second driving unit is connected to the second output end of the control module, the output end of the second driving unit is connected to the input end of the second switch unit, and the output end of the second switch unit is connected to the gate of the MOSFET.

[0037] It should be noted that the first driving unit includes a resistor network for controlling the turn-on of the IGBT and a resistor network for controlling the turn-off of the IGBT, and the second driving unit includes a resistor network for controlling the turn-on of the MOS transistor and a resistor network for controlling the turn-off of the MOS transistor. Similarly, the first switching unit includes an analog switch network for controlling the turn-on of the IGBT and an analog switch network for controlling the turn-off of the IGBT, and the second switching unit includes an analog switch network for controlling the turn-on of the MOS transistor and an analog switch network for controlling the turn-off of the MOS transistor.

[0038] It can be understood that each resistor network includes at least two driving resistors, and each analog switch network includes at least two analog switches.

[0039] In this embodiment, the driving resistors of the IGBT and the driving resistors of the MOS transistor are independent of each other, and the driving resistors of the IGBT and the driving resistors of the MOS transistor can be adjusted separately according to the working conditions.

[0040] In a feasible embodiment, as Figure 2 shown, the first driving unit includes a first diode D1, a second diode D2, a first IGBT resistor network 1211 and a second IGBT resistor network 1212. The first IGBT resistor network 1211 includes at least two parallel driving resistors, the second IGBT resistor network 1212 includes at least two parallel driving resistors, and the first switching unit includes a first IGBT switch network 1221 and a second IGBT switch network 1222;

[0041] The positive electrode of the first diode D1 is connected to the first output terminal of the control module 110, the negative electrode of the first diode D1 is connected to the first ends of the parallel driving resistors in the first IGBT resistor network 1211, the second ends of the parallel driving resistors in the first IGBT resistor network 1211 are respectively connected to the first ends of the corresponding analog switches in the first IGBT switch network 1211, and the second ends of the analog switches in the first IGBT switch network 1221 are connected to the gate of the IGBT;

[0042] The negative electrode of the second diode D2 is connected to the first output terminal of the control module 110, the positive electrode of the second diode D2 is connected to the first ends of the parallel driving resistors in the second IGBT resistor network 1212, the second ends of the parallel driving resistors in the second IGBT resistor network 1212 are respectively connected to the first ends of the corresponding analog switches in the second IGBT switch network 1222, and the second ends of the analog switches in the second IGBT switch network 1222 are connected to the gate of the IGBT.

[0043] It should be noted that the first driving unit composed of the first diode D1, the second diode D2, the first IGBT resistor network 1211 and the second IGBT resistor network 1212 is used to control the magnitude of the driving resistor connected to the control terminal (gate) of the IGBT.

[0044] It can be understood that the driving resistors in the first IGBT resistor network 1211 are used to connect or disconnect from the control terminal of the IGBT through series-connected analog switches, so as to change the total resistance value connected, and further change the turn-on speed of the IGBT. Similarly, the driving resistors in the second IGBT resistor network 1212 are used to connect or disconnect from the control terminal of the IGBT through series-connected analog switches, so as to change the total resistance value connected, and further change the turn-off speed of the IGBT.

[0045] In this embodiment, the turn-on resistance and turn-off resistance of the IGBT are independent of each other, and the turn-on resistance and turn-off resistance of the IGBT can be adjusted respectively according to the specifications of the driving resistors and the working conditions.

[0046] In a feasible embodiment, the second driving unit includes a third diode D3, a fourth diode D4, a first MOS resistor network 1213 and a second MOS resistor network 1214. The first MOS resistor network 1213 includes at least two parallel driving resistors, the second MOS resistor network 1214 includes at least two parallel driving resistors, and the second switching unit includes a first MOS switching network 1223 and a second MOS switching network 1224;

[0047] The positive electrode of the third diode D3 is connected to the second output terminal of the control module. The negative electrode of the third diode D3 is connected to the first ends of the parallel driving resistors in the first MOS resistor network 1212. The second ends of the parallel driving resistors in the first MOS resistor network 1212 are respectively connected to the first ends of the corresponding analog switches in the first MOS switching network 1222. The second ends of the analog switches in the first MOS switching network 1222 are connected to the gate of the IGBT;

[0048] The negative electrode of the fourth diode D4 is connected to the second output terminal of the control module. The positive electrode of the fourth diode D4 is connected to the first ends of the parallel driving resistors in the second MOS resistor network 1214. The second ends of the parallel driving resistors in the second MOS resistor network 1214 are respectively connected to the first ends of the corresponding analog switches in the second MOS switching network 1224. The second ends of the analog switches in the second MOS switching network 1224 are connected to the gate of the MOS transistor.

[0049] It should be noted that the second driving unit composed of the third diode D3, the fourth diode D4, the first MOS resistor network 1213 and the second MOS resistor network 1214 is used to control the magnitude of the driving resistor connected to the control terminal (gate) of the MOS transistor.

[0050] In this embodiment, the on-resistance and off-resistance of the MOS transistor are independent of each other, and the on-resistance and off-resistance of the MOS transistor can be adjusted separately according to the specifications of the driving resistor and the working conditions.

[0051] It can be understood that the driving resistor in the first MOS resistor network 1213 is used to connect or disconnect from the control terminal of the MOS transistor through a series-connected analog switch, so as to change the total resistance value connected, and further change the on-speed of the MOS transistor. Similarly, the driving resistor in the second MOS resistor network 1214 is used to connect or disconnect from the control terminal of the MOS transistor through a series-connected analog switch, so as to change the total resistance value connected, and further change the off-speed of the MOS transistor.

[0052] In a feasible embodiment, the driving resistor network is used to control the response speed of the IGBT by adjusting the resistance value of the first driving unit, and is also used to control the response speed of the MOS transistor by adjusting the resistance value of the second driving unit.

[0053] It should be noted that the on and off of the MOS transistor are related to the received target driving signal. Among them, the larger the resistance value of the first driving unit, the slower the on-response speed of the corresponding IGBT, and the smaller the resistance value of the first driving unit, the faster the off-response speed of the corresponding IGBT; the larger the resistance value of the second driving unit, the slower the on-response speed of the corresponding MOS transistor, and the smaller the resistance value of the second driving unit, the slower the off-response speed of the corresponding MOS transistor.

[0054] In a feasible embodiment, as Figure 3 shown, the control module 110 includes:

[0055] MCU 111 and driving IC 112, the MCU is electrically connected to the driving IC, the driving IC is electrically connected to the driving resistor network, and the MCU is electrically connected to the analog switch network;

[0056] MCU 111 is used to generate corresponding target switch control instructions and initial driving signals according to different working conditions, and the target switch control instructions are used to control the disconnection and closing of each analog switch in the analog switch network 122;

[0057] The driving IC 112 is used to generate target driving signals for driving the MOS transistor 131 and the IGBT 132 according to the initial driving signal.

[0058] It should be noted that the MCU determines the parallel connection mode of different driving resistors and the current PWM duty cycle according to different working conditions and strategies, that is, the initial driving signal is obtained. Then the MCU sends the initial driving signal to the driving IC112, and the driving IC112 converts the initial driving signal into a target driving signal that can drive the IGBT and MOSFET to achieve power amplification. Among them, the initial driving signal is a PWM signal generated by the MCU according to the corresponding strategy. This strategy is used to determine the current optimal combination of driving resistors based on relevant signals such as the collected current, and to control the power module through the driving IC, the driving resistor network, and the analog switch network.

[0059] In a feasible implementation manner, a driving resistor in the driving resistor network and an analog switch in the analog switch network form a driving branch.

[0060] For example, as Figure 2 or Figure 3 shown, the driving resistor network 121 includes 12 driving resistors, namely Ri_on1 to Ri_on3, Ri_off1 to Ri_off3, Rm_on1 to Rm_on3, and Rm_off1 to Rm_off3. The analog switch network 122 also includes 12 analog switches, namely Si_on1 to Si_on3, Si_off1 to Si_off3, Sm_on1 to Sm_on3, and Sm_off1 to Sm_off3. Among them, Ri_on1 to Ri_on3 are respectively connected in series with Si_on1 to Si_on3 one by one to form three driving branches, Ri_off1 to Ri_off3 are respectively connected in series with Si_off1 to Si_off3 one by one to form three driving branches, Rm_on1 to Rm_on3 are respectively connected in series with Sm_on1 to Sm_on3 one by one to form three driving branches, and Rm_off1 to Rm_off3 are respectively connected in series with Sm_off1 to Sm_off3 one by one to form three driving branches.

[0061] In this implementation manner, by opening and closing each analog switch in the analog switch network, the switching control of different driving branches can be realized to adjust the total driving resistance of the IGBT or MOSFET.

[0062] In a feasible implementation manner, the power module includes the switching devices on each arm of the three-phase full-bridge inverter circuit.

[0063] It should be noted that the switching devices on each arm of the three-phase full-bridge inverter circuit are composed of IGBTs or MOSFETs. Therefore, it is necessary to drive and manage the IGBTs and MOSFETs simultaneously, and set different driving resistances according to different working conditions. The specific working conditions can be set as follows: when the current flowing through the power module is less than the first threshold, it can be turned on through the MOSFET alone; when the current flowing through the power module is greater than the first threshold and less than the second threshold, it can be turned on through the MOSFET and IGBT simultaneously; when the current flowing through the power module is greater than the second threshold, it can be turned on through the IGBT alone.

[0064] It can be understood that the MOSFET has low losses and can withstand a relatively small maximum current, while the IGBT has high losses and can withstand a relatively large maximum current. When the MOSFET is turned on alone, the losses are small, which can reduce the device losses of the power module. When the IGBT is turned on alone, it can withstand a large current, which can improve the service life of the power module. In the working conditions between the two, the MOSFET and IGBT can be controlled to be turned on simultaneously.

[0065] It should also be noted that Figure 2 and Figure 3 only show one switching device, which does not represent a limit on the number of switching devices composed of MOSFETs and IGBTs in the power module, and can be adjusted according to the actual circuit conditions.

[0066] In the embodiment of the present application, by providing adjustable driving resistances for the MOSFET and IGBT respectively through the driving module, automatic optimization of the driving resistance under different currents can be achieved, maximizing the reduction of power device losses and improving the overall machine efficiency.

[0067] The embodiment of the present application also provides a control circuit, including: the driving circuit and the main circuit in any one of the above embodiments. The main circuit includes an EMI filter circuit, a film capacitor, and a three-phase full-bridge inverter circuit. The film capacitor is electrically connected to the EMI filter circuit and the three-phase full-bridge inverter circuit respectively. The main circuit is used to convert the direct current input from the EMI filter circuit into alternating current through the film capacitor and the three-phase full-bridge inverter circuit and output it. The driving circuit is used to control the turning on and off of the switching devices on each arm of the three-phase full-bridge inverter circuit.

[0068] It should be noted that the input end of the EMI filter circuit is connected to the positive and negative poles of the battery, the output end of the EMI filter circuit is connected to both ends of the film capacitor. The film capacitor plays a role in stabilizing the voltage in the main circuit. Both ends of the film capacitor are also connected to the input end of the three-phase full-bridge inverter circuit. The output end of the three-phase full-bridge inverter circuit is three-phase alternating current, which can be connected to a load.

[0069] It can be understood that the power module involved in this embodiment is the switching device on each arm of the three-phase full-bridge inverter circuit. Therefore, the analog switches in the analog switch network need to be connected to the control terminals of the switching devices on each arm of the three-phase full-bridge inverter circuit at the same time.

[0070] Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the above-described systems, devices, and units can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0071] In addition, in the description of the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0072] In the description of the present application, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0073] Finally, it should be noted that the above embodiments are only specific implementation manners of the present application, used to illustrate the technical solutions of the present application, rather than limiting it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art within the technical scope disclosed by the present application can still modify the technical solutions recorded in the foregoing embodiments, or can easily think of changes, or make equivalent replacements for some of the technical features; and these modifications, changes, or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application and should all be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A driving circuit, characterized in that: include: A control module, a drive module and a power module, wherein the power module includes a MOS tube and an IGBT, and the drive module is electrically connected to the control module and the power module respectively; The control module is used to generate a target switch control instruction and a target drive signal according to a preset working condition; The driving module is used to adjust the driving resistance connected to the MOS tube and / or the driving resistance connected to the IGBT according to the target switch control instruction, and transmit the target driving signal to the MOS tube and the IGBT; The power module is used to control the MOS tube and the IGBT to turn on and off according to the received target drive signal instruction.

2. The driving circuit according to claim 1, characterized in that: The driving module includes a driving resistor network and an analog switch network; The driving resistor network is used to provide a series driving resistor for each analog switch in the analog switch network; The analog switch network is used to provide a series analog switch for each driving resistor in the driving resistor network, and to control the opening and closing of each analog switch in the analog switch network based on the target switch control instruction.

3. The driving circuit according to claim 2, characterized in that: The driving resistor network includes a first driving unit and a second driving unit, and the analog switch network includes a first switch unit and a second switch unit; The input end of the first driving unit is connected to the first output end of the control module, the output end of the first driving unit is connected to the input end of the first switching unit, and the output end of the first switching unit is connected to the gate of the IGBT; The input end of the second driving unit is connected to the second output end of the control module, the output end of the second driving unit is connected to the input end of the second switch unit, and the output end of the second switch unit is connected to the gate of the MOS tube.

4. The driving circuit according to claim 3, characterized in that: The first driving unit includes a first diode, a second diode, a first IGBT resistor network and a second IGBT resistor network, the first IGBT resistor network includes at least two parallel driving resistors, the second IGBT resistor network includes at least two parallel driving resistors, and the first switching unit includes a first IGBT switch network and a second IGBT switch network; The anode of the first diode is connected to the first output terminal of the control module, the cathode of the first diode is connected to the first end of each parallel driving resistor in the first IGBT resistor network, the second end of each parallel driving resistor in the first IGBT resistor network is respectively connected to the first end of the corresponding analog switch in the first IGBT switch network, and the second end of each analog switch in the first IGBT switch network is connected to the gate of the IGBT; The cathode of the second diode is connected to the first output end of the control module, the anode of the second diode is connected to the first end of each parallel driving resistor in the second IGBT resistor network, the second end of each parallel driving resistor in the second IGBT resistor network is respectively connected to the first end of the corresponding analog switch in the second IGBT switch network, and the second end of each analog switch in the second IGBT switch network is connected to the gate of the IGBT.

5. The driving circuit according to claim 3, characterized in that: The second driving unit includes a third diode, a fourth diode, a first MOS resistor network and a second MOS resistor network, the first MOS resistor network includes at least two parallel driving resistors, the second MOS resistor network includes at least two parallel driving resistors, and the second switch unit includes a first MOS switch network and a second MOS switch network; The anode of the third diode is connected to the second output terminal of the control module, the cathode of the third diode is connected to the first end of each parallel driving resistor in the first MOS resistor network, the second end of each parallel driving resistor in the first MOS resistor network is respectively connected to the first end of the corresponding analog switch in the first MOS switch network, and the second end of each analog switch in the first MOS switch network is connected to the gate of the IGBT; The cathode of the fourth diode is connected to the second output end of the control module, the anode of the fourth diode is connected to the first end of each parallel driving resistor in the second MOS resistor network, the second end of each parallel driving resistor in the second MOS resistor network is respectively connected to the first end of the corresponding analog switch in the second MOS switch network, and the second end of each analog switch in the second MOS switch network is connected to the gate of the MOS tube.

6. The driving circuit according to claim 3, characterized in that: The driving resistor network is used to control the response speed of the IGBT by adjusting the resistance value of the first driving unit, and is also used to control the response speed of the MOS tube by adjusting the resistance value of the second driving unit.

7. The driving circuit according to claim 2, characterized in that: The control module comprises: MCU and driver IC, the MCU is electrically connected to the driver IC, the driver IC is electrically connected to the driving resistor network, and the MCU is electrically connected to the analog switch network; The MCU is used to generate corresponding target switch control instructions and initial drive signals according to different working conditions, and the target switch control instructions are used to control the opening and closing of each analog switch in the analog switch network; The driving IC is used to generate a target driving signal for driving the MOS tube and the IGBT according to the initial driving signal.

8. The driving circuit according to claim 2, characterized in that: A driving resistor in the driving resistor network and an analog switch in the analog switch network form a driving branch.

9. The driving circuit according to claim 1, characterized in that: The power module includes switch devices on each bridge arm of a three-phase full-bridge inverter circuit.

10. A control circuit, characterized in that: It comprises a drive circuit and a main circuit as described in any one of claims 1 to 9, wherein the main circuit comprises an EMI filter circuit, a membrane capacitor and a three-phase full-bridge inverter circuit, wherein the membrane capacitor is electrically connected to the EMI filter circuit and the three-phase full-bridge inverter circuit respectively, and the main circuit is used to convert the direct current input from the EMI filter circuit into alternating current through the membrane capacitor and the three-phase full-bridge inverter circuit and output it, and the drive circuit is used to control the opening and closing of the switching devices on each bridge arm in the three-phase full-bridge inverter circuit.

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