Wafer transmission and detection integrated device
By designing an integrated wafer transmission and detection device in the semiconductor machine, combining optical detection unit and wafer transmission unit, accurate detection of wafer chip situation is achieved, solving the problem of insufficient detection accuracy in the prior art, and ensuring the yield control and economic benefits of wafers.
Patent Information
- Application Number
- CN202421970365.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-14
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-08-14
AI Technical Summary
In the prior art, the detection accuracy of whether the wafer is broken in the semiconductor machine is insufficient, resulting in the failure of the chip to be detected and contaminated the machine or storage container, causing irreversible economic losses.
Design an integrated wafer transmission and detection device, combining a wafer transmission unit and an optical detection unit, and detects the wafer surface morphology by using the optical detection unit before/after the wafer transmission unit fixes the wafer, analyzes the morphology of the detection area through an image processing algorithm, and compares it with the calibration morphology when the wafer is intact, and determines whether the wafer has broken.
Accurate detection of wafer chip conditions is achieved, the yield control of wafers is ensured, economic losses caused by chip chips are avoided, and suitable for production line applications.
Smart Images
Figure CN222927424U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor manufacturing and detection, and relates to an integrated device for wafer transfer and detection. Background Art
[0002] In the process of manufacturing semiconductor devices, high-temperature annealing processes are usually used (for example, annealing after source-drain ion implantation to activate ions and repair lattice damage, annealing of metal silicides, etc.). With the continuous improvement of device integration, higher requirements are put forward for the precision and control ability of manufacturing processes. For example, the thermal budget of the device for thermal is continuously reduced, and the annealing process time is reduced from the minute level to the millisecond level. The mainstream technology for the millisecond-level annealing process is the laser annealing process, which has significant advantages such as extremely fast heating, sensitive control, and improved activation efficiency of impurity ions. It can provide a high-temperature process for 0.2 - 1 ms with a very low thermal budget and is widely used in the semiconductor manufacturing process.
[0003] However, due to the high process temperature conditions provided by the laser annealing machine, it is easy for the wafer to generate thermal stress during the laser annealing process (especially in the wafer edge area), resulting in one of the machines with a relatively high chip breakage rate in the industry, usually up to three per ten thousand. Currently, the pressure value applied to the wafer by the vacuum pad on the robotic arm for wafer transfer or the vacuum pad on the wafer chuck (chuck) inside the machine that holds the wafer is usually detected to feedback whether the wafer has broken. However, the above methods have insufficient detection accuracy for whether the wafer has broken, and it often occurs that the machine interior or other wafers in the wafer storage container (Front Opening Unified Pod, abbreviated as Foup) are contaminated due to the undetected wafer breakage, causing irreversible economic losses. There are also similar problems in other semiconductor machines where effective detection of chip breakage cannot be achieved.
[0004] Therefore, how to provide an integrated device for wafer transfer and detection to effectively detect whether the wafer in the semiconductor machine has broken has become an important technical problem that needs to be solved urgently by those skilled in the art.
[0005] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Utility Model
[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide an integrated wafer transfer and detection device, which is used to solve the problem that the effective detection of wafer fragmentation cannot be achieved in a semiconductor machine tool in the prior art.
[0007] To achieve the above purpose and other related purposes, the present utility model provides an integrated wafer transfer and detection device, including:
[0008] A wafer transfer unit for transferring wafers inside and outside a semiconductor machine tool;
[0009] An optical detection unit is arranged on the wafer transfer unit to detect the morphological information of the wafer before and after performing a preset process. The optical detection unit includes an optical detection component, and the optical detection component includes a light source and a light detector. The detection light beam emitted by the light source reaches the surface of the wafer and is reflected and collected by the light detector.
[0010] Optionally, the wafer transfer unit includes a wafer fixing part, and the optical detection component is rotatably arranged above and / or below the wafer fixing part.
[0011] Optionally, the vertical projection of the rotation center of the optical detection component coincides with the center of the wafer fixing part.
[0012] Optionally, the rotation speed range of the optical detection component is 1 r / min to 30 r / min, and the distance range between the optical detection component and the wafer is 3 to 50 cm.
[0013] Optionally, the wafer transfer unit includes a transfer driving member and a transfer robotic arm. The transfer driving member is connected to the transfer robotic arm to drive the transfer robotic arm to transfer the wafer, and the wafer fixing part is arranged at one end of the transfer robotic arm away from the transfer driving member.
[0014] Optionally, the optical detection unit further includes a detection driving member and a detection robotic arm. The optical detection component is arranged on the detection robotic arm, and the detection driving member is connected to the detection robotic arm to drive the detection robotic arm to drive the optical detection component to rotate relative to the wafer fixing part.
[0015] Optionally, the optical detection unit further includes a connecting rod, and the connecting rod is connected between the detection driving member and the transfer driving member so that the optical detection component moves with the movement of the wafer transfer unit.
[0016] Optionally, it further includes a control unit, which is connected to the transfer driver to control the wafer transfer assembly to transfer the wafer, and the control unit is also connected to the detection driver to control the optical detection assembly to rotate relative to the wafer fixing part.
[0017] Optionally, it further includes a signal processing unit, which is connected to the photodetector to process the topography information collected by the photodetector to determine whether the wafer is broken.
[0018] Optionally, the detection beam includes laser, and the light source includes at least one of a CO 2 laser and a diode laser, and the photodetector includes at least one of a photomultiplier tube and a photodiode; the semiconductor machine includes a laser annealing machine.
[0019] As described above, the integrated wafer transfer and detection device of the present invention integrates the optical detection unit for collecting the surface topography of the wafer with the wafer transfer unit for realizing wafer transfer. Before / after the wafer transfer unit fixes the wafer, the optical detection unit is used to collect the topography of the wafer after the process, and then the topography of the detection area is obtained by analyzing the collected information through an image processing algorithm. Comparing it with the calibrated topography when the wafer is intact can determine whether the wafer is broken, so as to accurately control the yield of the wafer. The overall structure of the device is simple, the cost is low, and the operation is convenient, which is suitable for production line applications. Description of the Drawings
[0020] Figure 1 It shows a partial top view schematic diagram of the integrated wafer transfer and detection device of the present invention.
[0021] Figure 2 It shows a partial side view schematic diagram of the integrated wafer transfer and detection device of the present invention when the optical detection assembly is arranged above the wafer fixing part.
[0022] Figure 3 It shows a partial side view schematic diagram of the integrated wafer transfer and detection device of the present invention when the optical detection assembly is arranged below the wafer fixing part.
[0023] Figure 4 It shows a schematic diagram of the working principle of the optical detection assembly in the integrated wafer transfer and detection device of the present invention.
[0024] Figure 5 Show Figure 4 The top view schematic diagram of the shown structure.
[0025] Figure 6It shows a simplified overall structural schematic diagram of the integrated wafer transfer and detection device of the present utility model.
[0026] Figure 7 It shows a step flow chart of the integrated wafer transfer and detection device of the present utility model being arranged between a laser annealing machine and a Foup to perform three detections before and after the laser annealing process on the wafer.
[0027] Description of reference numerals
[0028] 10 Integrated wafer transfer and detection device
[0029] 11 Wafer transfer unit
[0030] 111 Wafer fixing part
[0031] 1111 Vacuum pad
[0032] 112 Transfer driving part
[0033] 113 Transfer robotic arm
[0034] 12 Optical detection unit
[0035] 121 Optical detection component
[0036] 1211 Light source
[0037] 1212 Light detector
[0038] 122 Detection driving part
[0039] 123 Detection robotic arm
[0040] 124 Connecting rod
[0041] 13 Control unit
[0042] 14 Signal processing unit
[0043] 20 Wafer
[0044] 21 Edge area Detailed implementation manners
[0045] The following uses specific specific examples to illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific implementation manners, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.
[0046] Please refer to Figures 1 to 7It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Therefore, only the components related to the present utility model are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and proportions of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.
[0047] The present utility model provides an integrated wafer transfer and detection device (hereinafter referred to as "device"). Please refer to Figure 1 , which shows a top view of a partial structure of the device 10. The device 10 includes a wafer transfer unit 11 and an optical detection component 121. Among them, the wafer transfer unit 11 is used to transfer wafers 20 inside and outside a semiconductor machine. The optical detection unit 12 is disposed on the wafer transfer unit 11 to detect the topography information of the wafer 20 before and after performing a preset process. The optical detection unit 12 includes an optical detection component 121. The optical detection component 121 includes a light source 1211 and a light detector 1212. The detection beam emitted by the light source 1211 reaches the surface of the wafer 20, is reflected, and is collected by the light detector 1212. Please refer to Figures 2 to 4 for understanding. Among them, Figure 2 and Figure 3 respectively show side views of a partial structure of the device when the optical detection component is disposed above / below the wafer fixing part. Figure 4 shows a schematic diagram of the working principle of the optical detection component in the device.
[0048] As an example, as Figure 1 shown, the wafer transfer unit 11 includes a wafer fixing part 111. The optical detection component 121 is rotatably disposed above (as Figure 2 shown) and / or below (as Figure 3 shown) the wafer fixing part 111. The optical detection component 121 can rotate 360° to achieve omnidirectional detection. Among them, the light emitting surface of the light source 1211 and the light receiving surface of the light detector 1212 are both oriented towards the wafer 20 (please refer to Figure 4 ). The positional relationship between the optical detection component 121 and the wafer fixing part 111 is reasonably designed based on the way the wafer fixing part 111 fixes the wafer 20. For example, as Figure 2 shown, when the wafer fixing part 111 fixes the wafer 20 from bottom to top, since the layout area on the lower surface of the wafer 20 is blocked by the wafer fixing part 111 and omnidirectional detection cannot be achieved, at this time, the optical detection component 121 should be disposed above the wafer fixing part 111 to perform detection based on the upper surface of the wafer 20. Or, as Figure 3As shown, when the wafer fixing part 111 fixes the wafer 20 from top to bottom, since a local area on the upper surface of the wafer 20 is blocked by the wafer fixing part 111, the optical detection component 121 should be arranged below the wafer fixing part 111 to perform detection based on the lower surface of the wafer 20. Generally, when the wafer is broken, it should be reflected on both the upper and lower surfaces of the wafer at the same time. However, it cannot be excluded that in extremely rare cases, there are only crack marks on one surface of the wafer. At this time, optical detection components can be arranged both above and below the wafer fixing part to achieve precise detection. However, the probability of this situation occurring is extremely low. Therefore, it is preferably to arrange the optical detection component in only one direction.
[0049] Further, as Figure 1 shown, the wafer fixing part 111 includes a plurality of vacuum pads 1111, and the wafer 20 is fixed through the vacuum adsorption effect. Of course, in other embodiments, other methods can also be used to achieve the adsorption of the wafer. For example, an electrostatic chuck is used to apply an electrostatic adsorption effect to fix the wafer. In addition, it should be noted that Figure 1 three vacuum pads are taken as an example for illustration. In actual application, the number of vacuum pads can be less than or more than 3.
[0050] As an example, as Figure 4 shown, the position where the detection beam reaches the surface of the wafer 20 is in the edge area 21 of the wafer 20. The width of the edge area 21 ( Figure 5 shown as w in Figure 5 ) is less than or equal to 10 cm, including but not limited to 2 cm, 5 cm, and 8 cm. Please refer to Figure 4 for the top view schematic diagram of the structure shown. After analyzing the historical production situation, it is found that when the wafer is broken due to thermal stress and other factors during the process execution in the semiconductor machine tool, usually the breakage occurs along the radial direction, and there is basically no situation where the middle is damaged while the edge is intact, that is, when the wafer is broken, cracks will definitely occur at the local edge of the wafer (the above width range of the edge area is the summarized numerical range). Therefore, only by detecting the edge area of the wafer can it be effectively detected whether the wafer is broken, without the need to detect the entire surface of the wafer, thereby improving the detection efficiency.
[0051] As an example, the detection beam includes a laser, and the wavelength range of the laser is 500 - 15000 nm, including but not limited to 1000 nm, 5000 nm, and 10000 nm. The light source 1211 includes CO 2At least one of a laser and a diode laser, the wavelength range of the optical signal that the optical detector 1212 can detect is 300 to 10,000 nm, including but not limited to 800 nm, 3000 nm, and 8000 nm. The optical detector 1212 includes at least one of a photomultiplier tube and a photodiode. The reason for using a laser as the detection beam in the present invention is that its directivity is significantly higher than that of other types of beams, and it can meet the detection requirements without the need to configure a lens, a collimation system, etc. to improve the beam directivity. Of course, the light source 1211 may also include a laser other than the above two lasers or other light sources that can emit beams with good directivity. The optical detector 1212 may also be other devices or apparatuses for collecting beam signals. It should be noted that when a laser is used as the detection beam, the power of the laser emitting the laser needs to be strictly controlled to avoid damaging the wafer during detection.
[0052] As an example, the distance between the optical detection assembly 121 and the wafer 20 ( Figure 2 and Figure 3 shown as d in) ranges from 3 to 50 cm, including but not limited to 10 cm, 20 cm, and 40 cm. When the distance is less than the above range, the intensity of the echo signal is affected due to the proximity of the detection beam to the wafer surface, thereby affecting the detection accuracy. When the distance is greater than the above range, non-target light in the detection environment may be undesirably collected by the optical detector, affecting the detection accuracy. In addition, an excessive distance will also increase the overall volume of the device, which may not be applicable to the actual application environment. For example, the height of the wafer inlet and outlet of a semiconductor machine tool is limited, and adding an optical detection unit may prevent the robotic arm of the wafer transfer unit (i.e., the detection robotic arm) from entering and exiting the semiconductor machine tool to achieve the normal transfer of the wafer.
[0053] As an example, the rotation center of the optical detection assembly 121 coincides with the vertical projection of the center of the wafer fixing part 111 (or, the center of the wafer 20 when fixed to the wafer fixing part 111). Usually, in order to achieve a stable fixing effect on the wafer 20, the center of the wafer fixing part 111 should coincide with the center of the wafer 20. At this time, when the wafer 20 is fixed to the wafer fixing part 111, the optical detection assembly 121 can rotate around the center of the wafer 20 to achieve stable detection in the corresponding area in the circumferential direction of the wafer 20, avoiding the detection area deviating from the area that actually needs to be detected (i.e., the edge area 21).
[0054] As an example, the rotation speed range of the optical detection component 121 is 1 r / min to 30 r / min, including but not limited to 8 r / min, 12 r / min, 20 r / min, and 25 r / min, preferably 10 to 20 r / min. On the premise of ensuring complete detection of the edge region, the detection accuracy and detection efficiency are guaranteed. If the rotation speed range is exceeded, the acquisition accuracy of the wafer morphology will be affected.
[0055] As an example, the wafer transfer unit 11 includes a transfer driving member 112 and a transfer robotic arm 113. The transfer driving member 112 is connected to the transfer robotic arm 113 to drive the transfer robotic arm 113 to transfer the wafer 20. The wafer fixing portion 111 is provided at one end of the transfer robotic arm 113 away from the transfer driving member 112.
[0056] As an example, the optical detection component 121 further includes a detection driving member 122 and a detection robotic arm 123. The optical detection component 121 is disposed on the detection robotic arm 123. The detection driving member 122 is connected to the detection robotic arm 123 to drive the detection robotic arm 123 to drive the optical detection component 121 to rotate relative to the wafer fixing portion 111.
[0057] As an example, the optical detection component 121 further includes a connecting rod 124. The connecting rod 124 is connected between the detection driving member 122 and the transfer driving member 112 so that the optical detection component 121 moves with the movement of the wafer transfer unit 11.
[0058] As an example, the materials of the transfer robotic arm 113, the detection robotic arm 123, and the connecting rod 124 include at least one of silicon carbide and ceramics, and have good mechanical structure stability and long-term reliability. The transfer driving member 112 and the detection driving member 122 both include motors.
[0059] As an example, please refer to Figure 6 , which shows a simplified overall structural schematic diagram of the device. The device 10 further includes a control unit 13. The control unit 13 is connected to the transfer driving member 112 to control the transfer of the wafer 20 by the wafer 20 transfer component. The control unit 13 is also connected to the detection driving member 122 to control the rotation of the optical detection component 121 relative to the wafer fixing portion 111. Further, the control unit 13 can also be connected to the optical detection component 121 to control the emission and acquisition of the detection beam.
[0060] As an example, as shown in Figure 6As shown, the device 10 further includes a signal processing unit 14. The signal processing unit 14 is connected to the optical detector 1212 to process the topography information collected by the optical detector 1212 to determine whether the wafer 20 is broken. The basis for the signal processing unit 14 to determine whether the wafer 20 is broken is based on the calibrated topography of the complete wafer 20. By comparing the calibrated topography with the collected topography information, it is possible to accurately determine whether a breakage has occurred. Further, both the control unit 13 and the signal processing unit 14 can be provided in the machine control terminal of the semiconductor machine tool.
[0061] As an example, the semiconductor machine tool includes a laser annealing machine tool. As introduced in the background art section, the probability of wafer breakage in a laser annealing machine tool is higher than that in other semiconductor machine tools. Therefore, the device is particularly suitable for wafer transfer inside and outside the laser annealing machine tool, and has great practical application significance. Of course, it does not exclude the possibility that the device can be applied to other types of semiconductor machine tools, such as high-temperature thermal oxidation machine tools, furnace tube machine tools, rapid annealing processing machine tools, etc. The preset process is determined based on the function of the semiconductor machine tool.
[0062] As an example, the device 10 is provided between the semiconductor machine tool and the wafer storage device (Foup) to transfer the wafer 20 from the wafer storage device to the semiconductor machine tool to perform related processes (for example, laser annealing process), or to transfer the wafer 20 that has completed the related process in the semiconductor machine tool to the wafer storage device to stand by and wait for other wafers in the same batch to complete the process and then be uniformly transferred to the next process.
[0063] This embodiment also provides a specific application example of the device. The application scenario is the entire process of transferring the wafer from the wafer storage device (Foup) to the laser annealing machine tool (i.e., the semiconductor machine tool is a laser annealing machine tool) to perform the process and then returning to the wafer storage device after the process. Please refer to Figure 7, shown as the step flow chart of this example. First, the wafer transfer unit in the device extends into the Foup to fix the wafer (to be subjected to the laser annealing process). Then, the optical detection unit performs the first detection on it, and processes the detection signal to determine whether the wafer is broken during the first detection. If the wafer is broken, the machine stops and alarms, and the wafer is taken out for separate processing. If the wafer is not broken, the wafer transfer unit transfers the wafer that has completed the first detection into the laser annealing machine to perform the laser annealing process (the laser annealing process includes preheating in the preheating unit in the machine, and then transferring to the wafer chuck for the laser annealing process); after the wafer has completed the laser annealing process, the optical detection unit extends into the laser annealing machine to perform the second detection on the wafer that has just completed the process, and processes the detection signal to determine whether the wafer is broken during the second detection. If the wafer is broken, the machine stops and alarms, and the wafer is taken out for separate processing. If the wafer is not broken, the wafer that has completed the second detection continues to stay in the laser annealing machine for cooling; finally, after the wafer has cooled, the optical detection unit extends into the laser annealing machine again to perform the third detection on the cooled wafer, and processes the detection signal to determine whether the wafer is broken during the third detection. If the wafer is broken, the machine stops and alarms, and the wafer is taken out for separate processing. If the wafer is not broken, the wafer transfer unit fixes and transfers the wafer in the laser annealing machine to the Foup.
[0064] Specifically, in the above process, the purpose of the first detection is to detect the wafer before it enters the laser annealing machine to prevent a broken wafer from entering the laser annealing machine and contaminating the internal working environment of the machine, and to avoid unnecessary laser annealing processes for the broken wafer, saving process time. The purpose of the second detection is to confirm whether the wafer is broken during the laser annealing process, and to avoid wasting process time by cooling the broken wafer. The purpose of the third detection is to confirm whether the wafer is broken during the cooling process after laser annealing, and to avoid contamination of other wafers that have or have not undergone the process caused by broken wafers falling into the Foup, resulting in unnecessary costs and product losses. Of course, if considerations are given to production efficiency, the number of detections can be selectively set. For example, if the wafer rarely breaks when stored in the Foup, this step can be omitted, thus ensuring the balance between production efficiency and yield control.
[0065] In summary, for the integrated wafer transfer and detection device of the present utility model, by integrating the optical detection unit for collecting the surface topography of the wafer and the wafer transfer unit for realizing wafer transfer into one body, before / after the wafer transfer unit fixes the wafer, the optical detection unit is used to collect the topography of the wafer after the process, and then the topography of the detection area is obtained by analyzing the collected information through an image processing algorithm. By comparing it with the calibrated topography when the wafer is intact, it can be determined whether the wafer is broken, thereby accurately controlling the yield of the wafer. The overall structure of the device is simple, the cost is low, and the operation is convenient, which is suitable for production line applications. Therefore, the present utility model effectively overcomes various disadvantages in the prior art and has high industrial utilization value.
[0066] The above embodiments are only illustrative of the principles and effects of the present utility model, and are not used to limit the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.
Claims
1. A wafer transmission and detection integrated device, characterized in that: include: Wafer transfer unit, used to transfer wafers in and out of semiconductor machines; An optical detection unit is arranged on the wafer transmission unit to detect the morphological information of the wafer before and after a preset process is performed. The optical detection unit includes an optical detection component, and the optical detection component includes a light source and a light detector. The detection light beam emitted by the light source reaches the surface of the wafer, is reflected, and is collected by the light detector.
2. The wafer transmission and detection integrated device according to claim 1, characterized in that: The wafer transfer unit includes a wafer fixing portion, and the optical detection component is rotatably disposed above and / or below the wafer fixing portion.
3. The wafer transmission and detection integrated device according to claim 2, characterized in that: The rotation center of the optical detection component coincides with the vertical projection of the center of the wafer fixing portion.
4. The wafer transmission and detection integrated device according to claim 2, characterized in that: The rotation speed range of the optical detection component is 1 r / min to 30 r / min, and the distance range between the optical detection component and the wafer is 3 to 50 cm.
5. The wafer transmission and detection integrated device according to claim 2, characterized in that: The wafer transfer unit includes a transfer driver and a transfer robot arm. The transfer driver is connected to the transfer robot arm to drive the transfer robot arm to transfer the wafer. The wafer fixing portion is arranged at one end of the transfer robot arm away from the transfer driver.
6. The wafer transmission and detection integrated device according to claim 5, characterized in that: The optical detection unit also includes a detection drive and a detection robot arm. The optical detection component is arranged on the detection robot arm. The detection drive is connected to the detection robot arm to drive the detection robot arm to drive the optical detection component to rotate relative to the wafer fixing part.
7. The wafer transmission and detection integrated device according to claim 6, characterized in that: The optical detection unit further includes a connecting rod connected between the detection driving member and the transmission driving member so that the optical detection assembly moves along with the movement of the wafer transmission unit.
8. The wafer transmission and detection integrated device according to claim 6, characterized in that: It also includes a control unit, which is connected to the transmission drive to control the wafer transmission component to transfer the wafer. The control unit is also connected to the detection drive to control the optical detection component to rotate relative to the wafer fixing part.
9. The wafer transmission and detection integrated device according to claim 1, characterized in that: It also includes a signal processing unit, which is connected to the light detector to process the morphology information collected by the light detector to determine whether the wafer is broken.
10. The wafer transmission and detection integrated device according to claim 1, characterized in that: The detection beam includes laser, the light source includes at least one of a CO2 laser and a diode laser, the light detector includes at least one of a photomultiplier tube and a photodiode; and the semiconductor machine includes a laser annealing machine.