Power module with built-in absorption capacitor
By inserting an absorbing capacitor on the upper side of the power module substrate and connecting it with the DC circuit layer, the problem of poor effect of the external absorbing capacitor is solved, and more effective voltage spike absorption and oscillation reduction is achieved.
Patent Information
- Application Number
- CN202421889129.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-06
- Publication Date
- 2025-05-30
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
External absorption capacitors of existing power modules are not effective when absorbing voltage spikes and introduce additional voltage oscillations.
A power module with built-in absorption capacitor is designed, the absorption capacitor is set on the upper side of the substrate and fixedly connected between the DC positive circuit layer and the DC negative circuit layer, closer to the power chip.
Effectively absorb voltage spikes, reducing voltage oscillation caused by parasitic inductors, and improving the performance of the power module.
Smart Images
Figure CN222927502U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of power module structures, and particularly relates to a power module with an internal absorption capacitor. Background Art
[0002] Power modules are key components in power electronics technology. They integrate one or multiple parallel high-power semiconductor device chips (such as IGBTs, MOSFETs, etc.) and are modularly packaged. These modules are designed to handle high voltages and large currents, enabling effective conversion and control of electrical energy, and are widely used in fields such as motor drives, frequency converters, uninterruptible power supplies (UPS), and solar inverters.
[0003] Due to the existence of system parasitic inductance in power modules, power chips will have large voltage spikes and oscillations. Therefore, existing technologies often need to install absorption capacitors externally to improve the performance of power modules. However, since general absorption capacitors are set outside the power module and are far from the chips, the effect of absorbing voltage spikes is not ideal, and the parasitic inductance of the external path will cause additional voltage oscillations. Summary of the Utility Model
[0004] The technical problem to be solved by the utility model is to overcome the defect that the external absorption capacitor of the power module in the prior art has a poor effect on absorbing voltage spikes and introduces additional voltage oscillations, so as to provide a power module with an internal absorption capacitor.
[0005] A power module with an internal absorption capacitor includes a power chip, an absorption capacitor, a substrate, and a housing; a power unit is formed on the upper side of the substrate, and the power unit includes a DC positive circuit layer, a DC negative circuit layer, and an absorption capacitor. The DC positive circuit layer and the DC negative circuit layer are respectively fixed on the surface of the substrate. The power chip is fixed on the upper side of the substrate and is electrically connected to the DC positive circuit layer and the DC negative circuit layer. Both ends of the absorption capacitor are respectively fixed and electrically connected to the DC positive circuit and the DC negative circuit layer; the housing is fixed on the upper side of the substrate and covers the power unit.
[0006] Further, it also includes potting glue, and the potting glue fills the space between the housing and the substrate.
[0007] Further, the potting glue is silicone.
[0008] Further, the potting glue is epoxy resin.
[0009] Further, three power units are provided on the substrate, and one housing covers the three power units.
[0010] Further, the substrate is one of DCB, AMB, and IMS.
[0011] Further, the absorption capacitor is a chip capacitor.
[0012] Further, the absorption capacitor is connected to the DC positive circuit layer and the DC negative circuit layer through solder paste.
[0013] Further, the absorption capacitor is laser welded to the DC positive circuit layer and the DC negative circuit layer.
[0014] Further, the absorption capacitor is ultrasonically welded to the DC positive circuit layer and the DC negative circuit layer.
[0015] Beneficial effects: The present utility model discloses a power module with an internal absorption capacitor. The absorption capacitor is arranged on the upper side of the substrate and fixedly connected between the DC positive power layer and the DC negative circuit layer. In the present utility model, the absorption capacitor is arranged inside the power module, closer to the power chip, which can effectively absorb voltage spikes and reduce voltage oscillations caused by parasitic inductance. Description of the Drawings
[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0017] Figure 1 It is a schematic diagram of the overall structure of the present utility model.
[0018] Description of the reference numerals: 1, power chip; 2, absorption capacitor; 3, substrate; 31, DC positive circuit layer; 32, DC negative circuit layer. Detailed Embodiments
[0019] In order to make the above objects, features, and advantages of the present application more obvious and understandable, the following will make a detailed description of the specific embodiments of the present application with reference to the drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein. Those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0020] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.
[0021] In the present application, unless otherwise clearly specified and defined, terms such as "installation", "connection", "connection", "fixation", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.
[0022] Referring to Figure 1 As shown, this embodiment provides a power module with an internal absorption capacitor, including a power chip 1, an absorption capacitor 2, a substrate 3, and a housing; a power unit is formed on the upper side of the substrate 3, and the power unit includes a DC positive circuit layer 31, a DC negative circuit layer, and the absorption capacitor 2. The DC positive circuit layer 31 and the DC negative circuit layer are respectively fixed on the surface of the substrate 3. The power chip 1 is fixed on the upper side of the substrate 3 and is conductively connected to the DC positive circuit layer 31 and the DC negative circuit layer. Both ends of the absorption capacitor 2 are respectively fixed and conductively connected to the DC positive circuit and the DC negative circuit layer; the housing is fixed on the upper side of the substrate 3 and covers the power unit.
[0023] In the power module with an internal absorption capacitor disclosed in this embodiment, the absorption capacitor 2 is arranged on the upper side of the substrate 3 and is fixedly connected between the DC positive power layer and the DC negative circuit layer. In the present invention, the absorption capacitor 2 is arranged inside the power module, closer to the power chip 1, which can effectively absorb voltage spikes and reduce the voltage oscillation caused by parasitic inductance.
[0024] Specifically, it further includes potting glue, and the potting glue fills the space between the housing and the substrate 3. In some embodiments of the present invention, the potting glue is silicone. In some other embodiments of the present invention, the potting glue is epoxy resin.
[0025] In this embodiment, a total of three power units are provided on the substrate 3. The three power units are arranged side by side from left to right, and an absorption capacitor 2 is respectively provided for each power unit. A housing covers the three power units.
[0026] Specifically, the substrate 3 is one of DCB, AMB, and IMS. The absorption capacitor 2 is a chip capacitor. The absorption capacitor 2 and the power chip 1 can be directly mounted on the substrate 3 through a mounter, further improving the preparation efficiency.
[0027] In some embodiments of the present utility model, the absorption capacitor 2 is connected to the DC positive circuit layer 31 and the DC negative circuit layer through solder paste. In some other embodiments of the present utility model, the absorption capacitor 2 is laser welded to the DC positive circuit layer 31 and the DC negative circuit layer. In some other embodiments of the present utility model, the absorption capacitor 2 is ultrasonically welded to the DC positive circuit layer 31 and the DC negative circuit layer.
[0028] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.
[0029] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.
Claims
1. A power module with a built-in absorption capacitor, characterized in that: The invention comprises a power chip (1), an absorption capacitor (2), a substrate (3) and a shell; a power unit is formed on the upper side of the substrate (3); the power unit comprises a DC positive circuit layer (31), a DC negative circuit layer (32) and an absorption capacitor (2); the DC positive circuit layer (31) and the DC negative circuit layer (32) are respectively fixed on the surface of the substrate (3); the power chip (1) is fixed on the upper side of the substrate (3) and is conductively connected to the DC positive circuit layer (31) and the DC negative circuit layer (32); and the two ends of the absorption capacitor are respectively fixed to and conductively connected to the DC positive circuit layer and the DC negative circuit layer (32); and the shell is fixed on the upper side of the substrate (3) and covers the power unit.
2. A power module with built-in absorption capacitor according to claim 1, characterized in that: It also includes potting glue, which fills the space between the shell and the substrate (3).
3. A power module with built-in absorption capacitor according to claim 2, characterized in that: The potting glue is silica gel.
4. The power module with built-in absorption capacitor according to claim 2, characterized in that: The potting glue is epoxy resin.
5. The power module with built-in absorption capacitor according to claim 1, characterized in that: A total of three power units are arranged on the base plate (3), and one housing covers the three power units.
6. The power module with built-in absorption capacitor according to claim 1, characterized in that: The substrate (3) is one of DCB, AMB and IMS.
7. The power module with built-in absorption capacitor according to claim 1, characterized in that: The absorption capacitor (2) is a chip capacitor.
8. The power module with built-in absorption capacitor according to claim 1, characterized in that: The absorption capacitor (2) is connected to the DC positive circuit layer (31) and the DC negative circuit layer (32) via solder paste.
9. The power module with built-in absorption capacitor according to claim 1, characterized in that: The absorption capacitor (2) is laser welded to the DC positive circuit layer (31) and the DC negative circuit layer (32).
10. The power module with built-in absorption capacitor according to claim 1, characterized in that: The absorption capacitor (2) is ultrasonically welded to the DC positive circuit layer (31) and the DC negative circuit layer (32).