Withstand voltage region device with superjunction sublayers distributed in staggered manner
By adopting the superjunction layer misalignment distribution design in the withstand voltage zone device, the thermal stability problem caused by the over-concentration of the current distribution in the charge balanced area is solved, and the uniform distribution of current and heat flow is achieved, which improves the thermal stability of the device and the uniformity of the electric field strength of the withstand voltage zone.
Patent Information
- Application Number
- CN202421849802.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-01
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-08-01
AI Technical Summary
In the prior art, the charge balance region itself is subjected to current drift by a single semiconductor region, resulting in the current distribution being too concentrated in the on-state, which can easily lead to excessive local temperature and reduce the long-term reliability of the device.
The voltage-to-voltage zone device design is adopted for the misalignment distribution of the superjunction sublayer, in which M superjunction sublayers are distributed in sequence along the source region to the drain region. The superjunction sublayer includes the superjunction N-type doped region and the superjunction P-type doped region. The angle between the junction surfaces in the adjacent superjunction sublayer is greater than 0° or less than 90° to achieve a more uniform distribution of current and heat flow.
Through the superjunction layer dislocation distribution design, the current is more uniformly distributed in space and the heat flow distribution is also more uniform, which improves the thermal stability of the device, and effectively suppresses the maximum electric field strength in a single superjunction layer, improving the uniformity of the electric field strength in the withstand voltage zone.
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Figure CN222928733U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of power semiconductor devices, in particular to a voltage-resistant area device with misaligned distribution of superjunction sub-layers. Background Art
[0002] In the semiconductor technology industry, in order to reduce the static loss of power electronic devices, it is necessary to reduce the specific on-resistance as much as possible while maintaining a high breakdown voltage. However, there is a significant contradictory relationship between the specific on-resistance and the breakdown voltage.
[0003] In traditional technical solutions, as Figure 1 shown, the voltage-resistant structure includes a source region 1 and a drain region 2, and a charge balance region is provided between the source region 1 and the drain region 2. The charge balance region structure is formed by an N-type doped region 3 and a P-type doped region 4, and the N-type doped region 3 and the P-type doped region 4 maintain charge balance. The source region 1 and the drain region 2 are distributed vertically, and the N-type doped region 3 and the P-type doped region 4 between the source region 1 and the drain region 2 are distributed horizontally.
[0004] In the prior art, the charge balance region itself is subject to current drift by a single semiconductor region, which also makes the current distribution too concentrated in a single semiconductor region in the on-state, easily causing the local temperature to be too high and reducing the long-term reliability of the device. Summary of the Utility Model
[0005] The utility model aims to solve at least one of the problems in the related art to some extent. For this reason, the purpose of the utility model is to provide a voltage-resistant area device with misaligned distribution of superjunction sub-layers. Each superjunction sub-layer is staggered in space at a certain angle. When the voltage-resistant area device is in the on-state, the flow of current is more evenly distributed in space, which is beneficial to the more uniform distribution of the heat flow of the voltage-resistant area device, thereby having better thermal stability.
[0006] To achieve the above purpose, the present application adopts the following technical solution: A voltage-resistant area device with misaligned distribution of superjunction sub-layers includes a source region and a drain region, and M superjunction sub-layers located between the source region and the drain region; the M superjunction sub-layers are sequentially distributed along the direction from the source region to the drain region; M is an integer greater than 1;
[0007] The superjunction sub-layer includes a superjunction N-type doped region and a superjunction P-type doped region. The contact surface between the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sub-layer is a junction surface; the angle between the junction surfaces in adjacent superjunction sub-layers is greater than 0° and less than or equal to 90°.
[0008] Further, the angle between the junction surfaces in adjacent superjunction sub-layers is equal to 90°.
[0009] Further, the doping concentration of the superjunction N-type doped region is 10 15-16 cm -3, the doping concentration of the superjunction P-type doping region is 10 15-16 cm -3 .
[0010] Furthermore, the breakdown voltages of the M superjunction sub-layers are not exactly equal.
[0011] Furthermore, the total breakdown voltage of the device in the breakdown voltage region is equal to the sum of the breakdown voltages of the M superjunction sub-layers.
[0012] Furthermore, the source region and the drain region are arranged in parallel, and the central connection line of the superjunction N-type doping region and the superjunction P-type doping region is parallel to the source region.
[0013] Furthermore, the volumes of the same superjunction N-type doping region and superjunction P-type doping region are equal.
[0014] The above technical solution provided by the embodiment of the present application has the following advantages compared with the prior art: The breakdown voltage region device with misaligned distribution of superjunction sub-layers in the present application includes a source region and a drain region, and M superjunction sub-layers located between the source region and the drain region; the M superjunction sub-layers are sequentially distributed along the direction from the source region to the drain region; the superjunction sub-layer includes a superjunction N-type doping region and a superjunction P-type doping region, and the contact surface between the superjunction N-type doping region and the superjunction P-type doping region in the same superjunction sub-layer is a junction surface; the included angle between the junction surfaces in adjacent superjunction sub-layers is greater than 0° and less than or equal to 90°. In the present application, each superjunction sub-layer is spatially staggered at a certain angle with each other. When the breakdown voltage region device is in the on state, the flow of current is more evenly distributed in space, which is beneficial to making the heat flow distribution of the breakdown voltage region device more uniform, and thus has better thermal stability.
[0015] In the present application, the junction surfaces in each superjunction sub-layer are misaligned, which can effectively suppress the maximum electric field strength in a single superjunction sub-layer, so that a single superjunction sub-layer has a more uniform electric field strength in the breakdown voltage region.
[0016] At the same time, the breakdown voltages of each superjunction sub-layer in the present application can be independently designed, and the final breakdown voltage of the entire breakdown voltage region is composed of the superposition of each superjunction sub-layer, which provides flexibility for the design of the breakdown voltage of the breakdown voltage layer and effectively improves the contradictory relationship that the specific on-resistance correspondingly increases as the breakdown voltage increases in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The drawings here are incorporated into the description and form a part of this description, showing embodiments that conform to the present invention and are used together with the description to explain the principles of the present invention.
[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0019] In the drawings:
[0020] Figure 1 It is a schematic structural diagram of a power semiconductor device in the prior art;
[0021] Figure 2 It is a schematic structural diagram of the voltage-resistant region device in Embodiment 2;
[0022] Figure 3 It is a schematic structural diagram of the voltage-resistant region device in Embodiment 3;
[0023] Reference numerals in the drawings: 1, source region; 2, drain region; 3, N-type doped region; 4, P-type doped region; 301, first superjunction N-type doped region; 302, second superjunction N-type doped region; 303, third superjunction N-type doped region; 304, fourth superjunction N-type doped region; 305, fifth superjunction N-type doped region; 401, first superjunction P-type doped region; 402, second superjunction P-type doped region; 403, third superjunction P-type doped region; 404, fourth superjunction P-type doped region; 405, fifth superjunction P-type doped region. Detailed implementation manners
[0024] To have a clearer understanding of the technical features, objectives, and effects of the present invention, the following will describe the detailed implementation manners of the present invention with reference to the drawings. In the following description, it should be understood that the orientation or positional relationships indicated by "front", "rear", "upper", "lower", "left", "right", "longitudinal", "transverse", "vertical", "horizontal", "top", "bottom", "inner", "outer", "head", "tail", etc. are based on the orientation or positional relationships shown in the drawings, and are constructed and operated in a specific orientation. This is only for the convenience of describing the technical solution, rather than indicating that the indicated mechanism or element must have a specific orientation. Therefore, it should not be construed as a limitation to the present invention.
[0025] It should also be noted that, unless otherwise clearly specified and defined, terms such as "installation", "connection", "linkage", "fixation", "setting" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components. When one component is referred to as being "on" or "under" another component, this component can be "directly" or "indirectly" located above the other component, or there may also be one or more intermediate components. Terms such as "first", "second", "third", etc. are only for the convenience of describing the present technical solution, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", "third", etc. may explicitly or implicitly include one or more of such features. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0026] In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures, technologies, etc. are presented in order to thoroughly understand the embodiments of the present invention. However, those skilled in the art should clearly understand that the present invention can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, mechanisms, circuits, and methods are omitted to avoid unnecessary details from interfering with the description of the present invention.
[0027] Embodiment 1
[0028] To solve the above problems, as Figure 2 and Figure 3 shown, the present application provides a breakdown voltage region device with superjunction sublayer misaligned distribution, including a source region 1 and a drain region 2, and M superjunction sublayers located between the source region 1 and the drain region 2; the M superjunction sublayers are sequentially distributed along the direction from the source region 1 to the drain region 2, and M is an integer greater than 1. The superjunction sublayer includes a superjunction N-type doped region and a superjunction P-type doped region, and the central connection line of the superjunction N-type doped region and the superjunction P-type doped region is parallel to the source region. The contact surface between the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sublayer is the junction surface; the included angle between the junction surfaces in adjacent superjunction sublayers is greater than 0° and less than or equal to 90°, that is to say, the junction surfaces in adjacent superjunction sublayers are misaligned.
[0029] It should be noted that Figure 2 and Figure 3 the junction surfaces in adjacent superjunction sublayers are perpendicular to each other, that is, the included angle is 90°. And Figure 2 and Figure 3 are only one example, and when the included angle between adjacent superjunction sublayers is other angles, it is also within the protection scope of the present application.
[0030] In the present application, each superjunction sub-layer is spatially staggered at a certain angle with respect to each other. When the device in the breakdown voltage region is in the on state, the flow of current is more evenly distributed in space, which is beneficial to a more uniform heat flow distribution of the device in the breakdown voltage region, and thus has better thermal stability.
[0031] In the prior art, in order to increase the breakdown voltage of the charge-balanced breakdown voltage region structure, it is usually necessary to increase the thickness of the doped region. In the charge-balanced breakdown voltage region structure, since the breakdown voltage charges at both sides of the PN junction are closer to the PN junction, the electric field at this position is usually the maximum electric field in the charge-balanced breakdown voltage region structure. There is still a certain contradictory relationship between the specific on-resistance and the breakdown voltage at this position, that is, as the breakdown voltage increases, the specific on-resistance also increases significantly, which cannot meet the design requirements of high breakdown voltage and low specific on-resistance.
[0032] In the present application, the breakdown voltages of each superjunction sub-layer can be independently designed, and the final breakdown voltage of the entire breakdown voltage region is formed by the superposition of each superjunction sub-layer, which provides flexibility for the design of the breakdown voltage of the breakdown voltage layer, and effectively improves the contradictory relationship in the prior art that as the breakdown voltage increases, the specific on-resistance correspondingly increases.
[0033] In the present application, the junction planes in each superjunction sub-layer are misaligned, which can effectively suppress the maximum electric field strength in a single superjunction sub-layer, so that a single superjunction sub-layer has a more uniform electric field strength in the breakdown voltage region.
[0034] Embodiment 2
[0035] As Figure 2 shown, a breakdown voltage region device with misaligned superjunction sub-layers provided by the present application includes a source region 1 and a drain region 2, and two superjunction sub-layers located between the source region 1 and the drain region 2; the two superjunction sub-layers are sequentially distributed along the direction from the source region 1 to the drain region 2. The superjunction sub-layer includes a superjunction N-type doped region and a superjunction P-type doped region.
[0036] The source region 1 and the drain region 2 are arranged in parallel, and the center connection line between the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sub-layer is parallel to the source region. The contact surface between the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sub-layer is the junction plane; the angle between the junction planes in adjacent superjunction sub-layers is greater than 0° and less than or equal to 90°, that is to say, the junction planes in adjacent superjunction sub-layers are misaligned.
[0037] Furthermore, the doping concentration of the superjunction N-type doped region in the present application is 10 15-16 cm -3 , and the doping concentration of the superjunction P-type doped region is 10 15-16 cm -3 .
[0038] AsFigure 2 Shown is a breakdown voltage region structure of a vertical superjunction sublayer. At the topmost, a source region 1 with a heavily doped first conductivity type is provided, and at the bottommost, a drain region 2 with a heavily doped second conductivity type is provided. Herein, the first conductivity type and the second conductivity type are different. For example, the source region 1 and the drain region 2 are P-type doped and N-type doped respectively, or the source region 1 and the drain region 2 are N-type doped and P-type doped respectively.
[0039] On one side close to the drain region 2, a first superjunction sublayer is provided, and on one side close to the source region 1, a second superjunction sublayer is provided. The second superjunction sublayer includes a second superjunction N-type doped region 302 and a second superjunction P-type doped region 402; the first superjunction sublayer includes a first superjunction N-type doped region 301 and a first superjunction P-type doped region 401. That is to say, in the direction along the source region 1 and the drain region 2, the first superjunction sublayer and the second superjunction sublayer are sequentially provided.
[0040] The first superjunction N-type doped region 301 and the first superjunction P-type doped region 401 form a superjunction sublayer. The design between the two satisfies charge balance, and the volumes of the first superjunction N-type doped region 301 and the first superjunction P-type doped region 401 are equal. A junction plane of the first superjunction sublayer is formed between the first superjunction N-type doped region 301 and the first superjunction P-type doped region 401.
[0041] The second superjunction N-type doped region 302 and the second superjunction P-type doped region 402 form a superjunction sublayer. The design between the two satisfies charge balance, and the volumes of the second superjunction N-type doped region 302 and the second superjunction P-type doped region 402 are equal. A junction plane of the second superjunction sublayer is formed between the second superjunction N-type doped region 302 and the second superjunction P-type doped region 402.
[0042] The included angle between the junction plane of the first superjunction sublayer and the junction plane of the second superjunction sublayer is greater than 0° and less than or equal to 90°. As Figure 2 shown, the included angle between the junction plane of the first superjunction sublayer and the junction plane of the second superjunction sublayer is equal to 90°.
[0043] In this application, the thickness of each superjunction sublayer can be independently designed, and its corresponding breakdown voltage can also be independently designed. The doping concentration of the superjunction N-type doped region in this application is 10 15-16 cm -3 , and the doping concentration of the superjunction P-type doped region is 10 15-16 cm -3Meanwhile, the doping concentrations of the superjunction N-type doped regions in different superjunction sub-layers can be different. The breakdown voltage corresponding to each superjunction sub-layer is related to the doping concentration of the superjunction N-type doped region, the doping concentration of the superjunction P-type doped region, and the thickness of the superjunction sub-layer. The doping concentration of the superjunction N-type doped region, the doping concentration of the superjunction P-type doped region, and the thickness of the superjunction sub-layer in this superjunction sub-layer can be reasonably designed according to the breakdown voltage corresponding to this superjunction sub-layer.
[0044] In this application, the total breakdown voltage of the device with the breakdown voltage region is equal to the sum of the breakdown voltages of the two superjunction sub-layers.
[0045] Embodiment 3
[0046] As Figure 3 shown, a breakdown voltage region device with a misaligned distribution of superjunction sub-layers provided in this application includes a source region 1 and a drain region 2, and M superjunction sub-layers located between the source region 1 and the drain region 2; the M superjunction sub-layers are sequentially distributed along the direction from the source region 1 to the drain region 2, and M is an integer greater than 1. The superjunction sub-layer includes a superjunction N-type doped region and a superjunction P-type doped region.
[0047] The source region 1 and the drain region 2 are arranged in parallel, and the central connection line of the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sub-layer is parallel to the source region. The contact surface between the superjunction N-type doped region and the superjunction P-type doped region in the same superjunction sub-layer is the junction surface; the included angle between the junction surfaces in adjacent superjunction sub-layers is greater than 0° and less than or equal to 90°, that is to say, the junction surfaces in adjacent superjunction sub-layers are misaligned.
[0048] The doping concentration of the superjunction N-type doped region in this application is 10 15-16 cm -3 , and the doping concentration of the superjunction P-type doped region is 10 15-16 cm -3 . As Figure 3 shown, a source region 1 with a heavily doped first conduction type is provided at the topmost, and a drain region 2 with a heavily doped second conduction type is provided at the bottommost, where the first conduction type and the second conduction type are different. For example, the source region 1 and the drain region 2 are P-type doped and N-type doped respectively, or the source region 1 and the drain region 2 are N-type doped and P-type doped respectively.
[0049] Above the leakage region 2, a first superjunction sublayer is provided. Above the first superjunction sublayer, a second superjunction sublayer, a third superjunction sublayer, a fourth superjunction sublayer, a fifth superjunction sublayer, and so on until the Mth superjunction sublayer are sequentially provided. The first superjunction sublayer includes a first superjunction N-type doped region 301 and a first superjunction P-type doped region 401. The second superjunction sublayer includes a second superjunction N-type doped region 302 and a second superjunction P-type doped region 402. The third superjunction sublayer includes a third superjunction N-type doped region 303 and a third superjunction P-type doped region 403. The fourth superjunction sublayer includes a first superjunction N-type doped region 304 and a first superjunction P-type doped region 404. The fifth superjunction sublayer includes a fifth superjunction N-type doped region 305 and a fifth superjunction P-type doped region 405.
[0050] The first superjunction N-type doped region 301 and the first superjunction P-type doped region 401 form a superjunction sublayer. The design between them satisfies charge balance, and the volumes of the first superjunction N-type doped region 301 and the first superjunction P-type doped region 401 are equal. A junction surface of the first superjunction sublayer is formed between the first superjunction N-type doped region 301 and the first superjunction P-type doped region 401. The first superjunction N-type doped region 301 and the first superjunction P-type doped region 401 are arranged in the left-right direction horizontally.
[0051] The second superjunction N-type doped region 302 and the second superjunction P-type doped region 402 form a superjunction sublayer. The design between them satisfies charge balance, and the volumes of the second superjunction N-type doped region 302 and the second superjunction P-type doped region 402 are equal. A junction surface of the second superjunction sublayer is formed between the second superjunction N-type doped region 302 and the second superjunction P-type doped region 402. The second superjunction N-type doped region 302 and the second superjunction P-type doped region 402 are arranged in the front-back direction horizontally.
[0052] By analogy, in this application, adjacent superjunction sublayers are sequentially arranged in a staggered manner according to the left-right arrangement, front-back arrangement, left-right arrangement, and front-back arrangement, so that the included angle of the contact surfaces in adjacent superjunction sublayers is equal to 90°.
[0053] In this application, each superjunction sublayer can form an independent charge balance region. The thickness of each superjunction sublayer in this application can be independently designed, and its corresponding breakdown voltage can also be independently designed. The doping concentration of the superjunction N-type doped region in this application is 10 15-16 cm -3 , and the doping concentration of the superjunction P-type doped region is 10 15-16 cm -3Meanwhile, the doping concentrations of the superjunction N-type doped regions in different superjunction sub-layers can be different. The breakdown voltage corresponding to each superjunction sub-layer is related to the doping concentration of the superjunction N-type doped region, the doping concentration of the superjunction P-type doped region, and the thickness of the superjunction sub-layer. The doping concentration of the superjunction N-type doped region, the doping concentration of the superjunction P-type doped region, and the thickness of the superjunction sub-layer in this superjunction sub-layer can be reasonably designed according to the breakdown voltage corresponding to this superjunction sub-layer.
[0054] In the present application, the junction plane misalignment distributions in each superjunction sub-layer can effectively suppress the maximum electric field strength in a single superjunction sub-layer, making the electric field strength in the breakdown voltage region of a single superjunction sub-layer more uniform. Meanwhile, the breakdown voltage of the complete breakdown voltage region device is formed by the superposition of each superjunction sub-layer, and the electric fields of each superjunction sub-layer are further modulated, which helps to increase the breakdown voltage.
[0055] In the present application, each superjunction sub-layer is spatially offset at a certain angle from each other. When the breakdown voltage region device is in the on state, the flow of current is more uniformly distributed in space, which is beneficial to making the heat flow distribution of the breakdown voltage region device more uniform, thereby having better thermal stability.
[0056] In this embodiment, the breakdown voltage region with longitudinal superjunction sub-layers can be prepared by the following method:
[0057] The substrate is doped with a second conductivity type, and the second conductivity type doping is, for example, n-type doping. A drain region 2 located on the substrate is formed; an epitaxial layer with a designed thickness is epitaxially grown above the substrate. The right side of the epitaxial layer is masked, and the left side is doped with N-type to form a first superjunction N-type doped region 301; the left side of the epitaxial layer is masked, and the right side is doped with P-type to form a first superjunction P-type doped region 401;
[0058] An epitaxial layer with a designed thickness is epitaxially grown above the first superjunction sub-layer. The rear side of the epitaxial layer is masked, and the front side is doped with N-type to form a second superjunction N-type doped region 302; the front side of the epitaxial layer is masked, and the rear side is doped with P-type to form a second superjunction P-type doped region 402;
[0059] By analogy, M superjunction sub-layers arranged in a staggered manner are formed from bottom to top through epitaxial growth and ion implantation doping; finally, the topmost epitaxial layer is doped with a first conductivity type to form a source region 1 located on the substrate.
[0060] It should be noted that in the ion implantation doping process of each epitaxial layer in the present application, the doping concentration of the epitaxial layer can be controlled by controlling the implantation dose. And during the implantation process, a small amount of implanted ions will diffuse into the next epitaxial layer. Since the diffused ions are few, they will not affect the performance of the superjunction sub-layer.
[0061] Figure 3Only the vertical distribution of the junction planes in adjacent superjunction sub-layers is shown. When the included angle between the junction planes in adjacent superjunction sub-layers is other angles, the preparation method and working principle are similar. And in a device with the same breakdown voltage region, the included angles between adjacent junction planes can be equal or unequal, as long as it is ensured that the junction planes in adjacent superjunction sub-layers are misaligned.
[0062] It can be understood that the above embodiments only represent the preferred embodiments of the present invention, and the description is relatively specific and detailed, but it cannot be understood as a limitation on the scope of the patent of the present invention; it should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, the above technical features can be freely combined, and several deformations and improvements can also be made, all of which belong to the protection scope of the present invention; therefore, all equivalent transformations and modifications made to the scope of the claims of the present invention should fall within the scope covered by the claims of the present invention.
Claims
1. A voltage-withstand region device with a superjunction layer dislocation distribution, characterized in that: It includes a source region and a drain region, and M super junction sublayers located between the source region and the drain region; the M super junction sublayers are sequentially distributed along the direction from the source region to the drain region; M is an integer greater than 1; The super junction sublayer includes a super junction N-type doped region and a super junction P-type doped region. The contact surface between the super junction N-type doped region and the super junction P-type doped region in the same super junction sublayer is a junction surface. The angle between the junction surfaces in adjacent super junction sublayers is greater than 0° and less than or equal to 90°.
2. A voltage-withstand region device with staggered distribution of super junction sublayers according to claim 1, characterized in that: The angle between the junction surfaces in adjacent superjunction sublayers is equal to 90°.
3. The voltage-withstand region device with staggered distribution of super junction sublayers according to claim 1, characterized in that: The doping concentration of the super junction N-type doping region is 10 15-16 cm -3 The doping concentration of the superjunction P-type doping region is 10 15-16 cm -3 .
4. The voltage-withstand region device with staggered distribution of super junction sublayers according to claim 1, characterized in that: The breakdown voltages of the M superjunction sublayers are not completely equal.
5. The voltage-withstand region device with staggered distribution of super junction sublayers according to claim 4, characterized in that: The total breakdown voltage of the device in the withstand voltage region is equal to the sum of the breakdown voltages of the M super junction sublayers.
6. The voltage-withstand region device with staggered distribution of super junction sublayers according to claim 1, characterized in that: The source region and the drain region are arranged in parallel, and a center line connecting the super junction N-type doping region and the super junction P-type doping region is arranged parallel to the source region.
7. The voltage-withstand region device with staggered distribution of super junction sublayers according to claim 1, characterized in that: The volumes of the same super junction N-type doping region and the super junction P-type doping region are equal.