Annealing device
By setting up a gas supply channel and an outlet channel in the annealing device, the atmosphere in the heating chamber is uniformly controlled, and the problem of inconsistent process atmosphere during the annealing process of perovskite chips is solved, and the performance and crystallization quality of the chip are improved.
Patent Information
- Application Number
- CN202421520058.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-28
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-06-28
AI Technical Summary
During the annealing process of perovskite chips, due to the escape of organic gas and the rise of hot air, the process atmosphere of perovskite chips in different regions is inconsistent during the annealing process, resulting in poor crystallization and film formation quality.
An annealing device is designed to communicate with the heating chamber through the gas supply channel and the air outlet channel respectively, provide inert gas or beneficial gas, and discharge exhaust gas through the air outlet channel, control and adjust the atmosphere in the heating chamber during the annealing process to ensure uniform atmosphere.
Through uniform atmosphere control, the performance of the perovskite chip is improved, ensuring consistency and efficiency of the annealing process.
Smart Images

Figure CN222928750U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of solar cell manufacturing, in particular to an annealing device. Background Art
[0002] In the related art, during the annealing process of perovskite chips, multiple perovskite chips need to be annealed uniformly. After a large number of perovskite chips are concentrated in a certain space, a large amount of organic gas (waste gas) will escape under the action of temperature. When the concentration reaches a certain level, it will affect the crystallization of perovskite chips. Especially due to the principle that hot air rises in the annealing furnace, the concentration of organic gas at the top will be much higher than that at the bottom, resulting in inconsistent process atmospheres in different regions of perovskite chips during the annealing process, and poor film formation quality of some perovskite chips. Summary of the Utility Model
[0003] The utility model aims to at least solve one of the technical problems existing in the prior art. For this purpose, an object of the utility model is to provide an annealing device. The annealing device according to the utility model is communicated with a heating cavity through a gas supply channel and an air outlet channel respectively. The gas supply channel can provide an inert gas or a beneficial gas in the heating cavity, and the waste gas generated by heating in the heating cavity can be discharged through the air outlet channel to control and adjust the atmosphere in the heating cavity during the annealing process, avoid local concentration and residue of organic gas in the box body, ensure uniform atmosphere in each area of the box body and the heating cavity, and thus improve the performance of the finally formed perovskite chips.
[0004] The annealing device according to the utility model includes: a box body, in which a receiving space is provided; a heating tray, which is received in the receiving space and is provided with a heating cavity for receiving chips; a gas supply device, which is provided with a gas supply channel and an air outlet channel, the gas supply channel and the air outlet channel are respectively communicated with the heating cavity, and the gas supply device forms a carrier gas flow for carrying waste gas in the heating cavity.
[0005] The annealing device according to the utility model forms a heating cavity for receiving perovskite chips in the heating tray. The gas supply channel and the air outlet channel are respectively communicated with the heating cavity. The gas supply channel can provide an inert gas or a beneficial gas in the heating cavity, and the waste gas generated by heating in the heating cavity can be discharged through the air outlet channel to control and adjust the atmosphere in the heating cavity during the annealing process, avoid local concentration and residue of organic gas in the box body, ensure uniform atmosphere in each area of the box body and the heating cavity, and thus improve the performance of the finally formed perovskite chips.
[0006] According to some embodiments of the present utility model, a plurality of the heating trays are configured to be spaced apart in the height direction within the accommodation space, and the air supply channel and the air outlet channel are respectively communicated with the heating cavities in the plurality of the heating trays.
[0007] According to some embodiments of the present utility model, the air supply channel includes: a main pipeline, one end of the main pipeline is communicated with an air source; a branch flow path, the branch flow path is arranged in each of the heating trays and is respectively communicated with the main pipeline, and each branch flow path is provided with an outlet communicated with the heating cavity.
[0008] According to some embodiments of the present utility model, a plurality of the branch flow paths are configured to be spaced apart within the heating cavity, and each branch flow path includes an outlet communicated with the heating cavity.
[0009] According to some embodiments of the present utility model, the heating tray includes: a bottom plate for supporting the chip, and the air outlet end of the air supply channel is correspondingly arranged on the bottom plate; a side plate, the side plate is arranged on the outer periphery of the bottom plate and encloses the heating cavity with the bottom plate, and the air inlet end of the air outlet channel is arranged on the side plate.
[0010] According to some embodiments of the present utility model, the annealing device further includes: a heating device, the heating device is arranged within the heating cavity or within the bottom plate, and the heating device is used for heating the heating cavity.
[0011] According to some embodiments of the present utility model, a plurality of support pins are formed on the top surface of the bottom plate and are spaced apart, and the support pins are used for supporting the chip spaced from the bottom plate.
[0012] According to some embodiments of the present utility model, the side plate is a non-closed frame structure, and the side plate includes a loading port communicated with the heating cavity; the chip is moved into or out of the heating cavity through the loading port.
[0013] According to some embodiments of the present utility model, the annealing device further includes: a gas detection device, a plurality of the gas detection devices are configured to correspond to the heating trays one by one and are used for detecting the gas concentration in the corresponding heating cavity;
[0014] According to some embodiments of the present utility model, a control valve is further included, the control valve is arranged in each branch flow path, and the control valve is used for adjusting the gas flow rate of each branch flow path.
[0015] According to some embodiments of the present utility model, the annealing device further includes: an air extraction device, the air extraction device is communicated with the air outlet channel and is adapted to drive the gas flow in the air outlet channel.
[0016] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of the present utility model. Description of the Drawings
[0017] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0018] Figure 1 is a schematic structural view of a heating tray arranged inside an annealing device according to an embodiment of the present utility model;
[0019] Figure 2 is a top view of a heating tray arranged inside an annealing device according to an embodiment of the present utility model;
[0020] Figure 3 is a perspective view of a heating tray with a chip supported inside according to an embodiment of the present utility model;
[0021] Figure 4 is a schematic diagram of intake air of a branch flow path according to an embodiment of the present utility model.
[0022] Reference Signs:
[0023] 100, annealing device;
[0024] 11, heating device; 101, heating chamber; 12, bottom plate; 13, side plate; 14, supporting thimble; 15, chip;
[0025] 16, loading port;
[0026] 21, air supply channel; 211, branch flow path; 22, air outlet channel;
[0027] 102, temperature sensor; 103, vent hole; 31, control valve; 32, heating module. Detailed Embodiments
[0028] Embodiments of the present utility model will be described in detail below. Examples of the embodiments are shown in the drawings, in which the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present utility model and should not be construed as limiting the present utility model.
[0029] In the related art, during the annealing process of perovskite chips, multiple perovskite chips need to be annealed uniformly. After a large number of perovskite chips are concentrated in a certain space, a large amount of organic gas will escape under the action of temperature. When the concentration reaches a certain level, it will affect the crystallization of perovskite chips. Especially due to the principle that hot air rises in the annealing furnace, the concentration of organic gas at the top will be much higher than that at the bottom, resulting in inconsistent process atmospheres for perovskite chips in different regions during the annealing process.
[0030] Reference will be made below Figures 1 - 4 to describe the annealing device according to an embodiment of the present invention.
[0031] The annealing device 100 according to the present invention includes: a box body, a heating tray, and a gas supply device. An accommodation space is provided inside the box body; the heating tray is received in the accommodation space, and the heating tray is provided with a heating cavity 101 for accommodating the chip 15; the gas supply device is provided with a gas supply channel 21 and an air outlet channel 22, and the gas supply channel 21 and the air outlet channel 22 are respectively communicated with the heating cavity 101, and the gas supply device forms a carrier gas flow for carrying waste gas in the heating cavity.
[0032] In some specific embodiments, the annealing device 100 is composed of a box body, a heating tray, and a gas supply device. An accommodation space is formed inside the box body, and the heating tray is received in the accommodation space. The accommodation space not only provides an installation position for the heating tray but also defines a closed environment for annealing treatment, which helps to maintain the temperature, gas composition, and pressure conditions required for annealing. A heating cavity 101 is formed inside the heating tray, and the chip 15 is arranged in the heating cavity 101. The chip 15 can be configured as a perovskite chip 15. The gas supply channel 21 and the air outlet channel 22 of the gas supply device are respectively connected to the heating cavity 101. The gas supply channel 21 can introduce beneficial gases (i.e., carrier gases, such as inert gases, reducing gases) required during the annealing process from an external gas source into the heating cavity 101 to ensure that a specific gas environment can be achieved inside the heating cavity 101. The air outlet channel 22 is used to discharge the waste gas generated after the perovskite chip 15 in the heating cavity 101 is heated, avoiding local concentration and residue of organic gas in the box body, ensuring uniform atmosphere in each region of the box body and the heating cavity 101, and thus improving the performance of the finally formed perovskite chip 15.
[0033] If the carrier gas is a beneficial gas, such as DMF gas, passivation gas, etc., it can be used to maintain the required component ratio of the gas in the heating cavity 101, thereby controlling and adjusting the atmosphere in the heating cavity 101 during the annealing process through the gas supply device.
[0034] According to the annealing device 100 of the present utility model, a heating cavity 101 for accommodating the perovskite chip 15 is formed in the heating tray. The gas supply channel 21 and the gas outlet channel 22 are respectively communicated with the heating cavity 101. The gas supply channel 21 can supply inert gas or beneficial gas into the heating cavity 101, and the waste generated by heating in the heating cavity 101 can be discharged through the gas outlet channel 22 to control and adjust the atmosphere in the heating cavity 101 during annealing, avoid local concentration and residue of organic gas in the box body, ensure uniform atmosphere in each area of the box body and the heating cavity 101, and thus improve the performance of the finally formed perovskite chip 15.
[0035] According to some embodiments of the present utility model, the heating trays are configured as a plurality of spaced apart in the height direction in the accommodating space, and the gas supply channel 21 and the gas outlet channel 22 are respectively communicated with the heating cavities 101 in the plurality of heating trays. Among them, the plurality of heating trays are stacked on top of each other, and a closed or semi-closed heating cavity 101 can be formed between two adjacent sets of heating trays up and down. At this time, during annealing, the gas in the heating cavity is separately aggregated. Therefore, the heating cavity 101 is evacuated and ventilated through the intake channel and the outlet channel to solve the problem of waste gas aggregation in the heating cavity.
[0036] In some specific embodiments, the heating trays are configured as a plurality of, and the plurality of heating trays are sequentially spaced apart in the height direction in the accommodating space. A heating cavity 101 for accommodating the chip 15 is provided in each heating tray, which not only improves the utilization rate of the internal space of the box body, enhances the integration degree of the annealing device 100, but also enables the annealing device 100 to anneal a plurality of chips 15 at the same time, improving the working efficiency of the annealing device 100. Each heating tray can independently control the temperature of the perovskite chip 15 placed in the heating cavity 101 to improve the flexibility of chip 15 processing during annealing. On the one hand, the gas supply channel 21 is respectively connected to the heating cavities 101 in each heating tray to independently provide beneficial gas (such as inert gas or specific reaction gas) for each heating cavity 101, and the beneficial gas can be evenly and effectively transported into each heating cavity 101 through the gas supply channel 21 to regulate the generation of crystal sequences in the perovskite chip 15 during annealing, thereby improving the optoelectronic performance of the perovskite chip 15. On the other hand, the gas outlet channel 22 is respectively communicated with the heating cavities 101 of each heating tray to ensure that the excess gas generated after the reaction of the perovskite chip 15 in the heating cavity 101 can be discharged through the gas outlet channel 22, thereby maintaining the stability of the atmosphere in each heating cavity 101, making the gas in the plurality of heating cavities 101 in a balanced state, ensuring the consistency of the process atmosphere of the plurality of perovskite chips 15 when the annealing equipment anneals the plurality of perovskite chips 15, and ensuring the consistency of the performance parameters (such as photoelectric conversion efficiency, stability, etc.) of the plurality of perovskite chips 15 after annealing.
[0037] According to some embodiments of the present utility model, the gas supply channel 21 includes: a main pipeline and branch flow paths 211. One end of the main pipeline is communicated with a gas source; the branch flow paths 211 are arranged in each heating tray and are respectively communicated with the main pipeline, and each branch flow path 211 is provided with an outlet 102 communicated with the heating cavity 101.
[0038] In some specific embodiments, the gas supply channel 21 is composed of a main pipeline and branch flow paths 211. The main pipeline serves as the main trunk for gas supply and is directly connected to the gas source at one end, ensuring the continuity and stability of gas supply. Its extension in the height direction enables the gas to maintain a certain pressure during transportation, reducing the pressure drop caused by height changes and ensuring that the gas can be smoothly transported to each branch flow path 211. The branch flow paths 211 are arranged inside each heating tray and are connected to the main pipeline, ensuring a seamless transition of gas from the main pipeline to the inside of the heating cavity 101. Each heating tray is equipped with an independent branch flow path 211, so that the gas supply to each heating cavity 101 does not affect each other, facilitating independent control and adjustment, and improving the flexibility and adaptability of the annealing device 100. An outlet 102 is provided on each branch flow path 211, and the outlet 102 is communicated with the heating cavity 101 to ensure that the gas can be evenly and effectively distributed in the heating cavity 101, promoting the circulation of the gas in the heating cavity 101 and avoiding dead corners and gas stratification phenomena, thereby realizing the uniformity of the atmosphere in the heating cavity 101.
[0039] According to some embodiments of the present utility model, the branch flow paths 211 are configured to be multiple and spaced apart in the heating cavity 101. Multiple branch flow paths 211 are arranged in the heating cavity 101 at intervals, ensuring that each part of the heating cavity 101 can obtain uniform and sufficient gas supply. Each branch flow path 211 includes an outlet 102 communicated with the heating cavity 101, and the communicating outlets 102 are configured to be multiple and spaced apart in the extending direction of each branch flow path. The gas in each branch flow path 211 can be transported to various parts of the heating cavity 101 through multiple outlets 102 at the same time, making the distribution of the gas in the heating cavity 101 more uniform. At the same time, the outflow speed and direction of the gas can also be controlled through multiple different outlets 102, enhancing the control ability of the gas environment in the local area.
[0040] According to some embodiments of the present utility model, the heating tray includes: a bottom plate 12 and a side plate 13. The bottom plate 12 is used to support the chip 15, and the air outlet end of the gas supply channel 21 is correspondingly arranged on the bottom plate 12; the side plate 13 is arranged on the outer periphery of the bottom plate 12 and encloses the heating cavity 101 with the bottom plate 12, and the air inlet end of the air outlet channel 22 is arranged on the side plate 13.
[0041] In some specific embodiments, the heating tray is composed of a bottom plate 12 and side plates 13. A chip 15 is disposed on the bottom plate 12, and the bottom plate can be used to support the chip 15. The outlet 102 of the branch flow path 211 is located on the top surface of the bottom plate 12. The gas flowing out of the outlet of the branch flow path 211 can be directly released upward, that is, it flows from the bottom to the top of the heating chamber 101 so as to cover the entire heating chamber 101, ensuring uniform distribution and effective circulation of the gas in the heating chamber 101. At the same time, since the outlet end of the intake passage is located below the chip 15, it can also prevent the carrier gas from directly blowing onto the membrane surface. The outer periphery of the bottom plate 12 is provided with side plates 13 extending in the height direction. The side plates 13 and the bottom plate 12 jointly define the heating chamber 101. The side plates 13 play a role in isolation and heat preservation in maintaining the temperature and gas environment in the heating chamber 101. Through the close cooperation between the side plates 13 and the bottom plate 12, heat and gas leakage in the heating chamber 101 can be effectively reduced, providing an independent annealing space for each chip and ensuring the efficiency and consistency of the annealing process. In addition, the intake end of the outlet passage 22 is disposed on the side plate 13, that is, the carrier gas and waste gas in the heating chamber 101 are discharged out of the chamber through the side, enabling the waste gas to be quickly discharged from each side of the chip.
[0042] In addition, a plurality of ventilation holes 103 are formed on the bottom plate 12. The plurality of ventilation holes 103 are spaced apart from each other, and the plurality of ventilation holes 103 are respectively disposed opposite to and communicated with the plurality of outlets 102 on the branch flow path 211. The gas in the branch flow path 211 can be evenly dispersed into various parts of the heating chamber 101 through the plurality of outlets 102 and the plurality of ventilation holes 103, ensuring that the gas input into the heating chamber 101 is evenly distributed and avoiding local gas accumulation in the heating chamber 101, thereby ensuring the stability and consistency of the annealing environment.
[0043] According to some embodiments of the present invention, the annealing device 100 further includes: a heating device 11, and the heating device 11 is disposed in the heating chamber 101 or in the bottom plate 12, and the heating device 11 is used to heat the heating chamber 101.
[0044] In some specific embodiments, a heating device 11 is further provided in the annealing device 100. The heating device 11 can be configured as a plurality of heating wires. The plurality of heating wires are arranged in the bottom plate 12 or in the heating cavity 101. The heating wires can exchange heat with the heating cavity, so that the temperature in the heating cavity 101 can reach the preset temperature quickly and evenly. The perovskite chip 15 is arranged in the chip 15 in the heating cavity, thereby realizing pre-baking or solid baking of the perovskite chip 15 in the heating cavity 101. The plurality of heating wires are arranged at intervals along the width direction of the heating tray. The spaced heating wires can ensure that the heat distribution in each area of the heating cavity 101 is more uniform, avoiding the phenomenon of overheating or insufficient temperature rise in a local space of the heating cavity 101, improving the annealing effect of the perovskite chip 15. At the same time, since the densely arranged heating wires are prone to accelerated aging due to local overheating, the spaced arrangement of the plurality of heating wires can reduce the mutual influence between adjacent heating wires, reduce the working load of a single heating wire, and thus extend the service life of the heating wire and the entire annealing device 100.
[0045] According to some embodiments of the present invention, a plurality of spaced support thimbles 14 are formed on the top surface of the bottom plate 12. The support thimbles 14 are used to support the chip 15 at a distance from the bottom plate 12, avoiding direct contact between the chip 15 and the heating device 11 provided on the bottom plate. Direct contact between the chip 15 and the heating device 11 may cause the temperature of a local area of the chip 15 to rise too fast, that is, the bottom of the chip 15 is locally overheated while other parts have a lower temperature, thus affecting the heating uniformity of the chip 15, and further affecting the performance and crystallization quality of the perovskite chip 15. The support thimbles 14 can be made of a material with a low thermal conductivity, and the top of the support thimbles 14 can be configured in a specific shape, such as a flat head, a pointed head, a micro-convex or a ring design, etc., so that the contact area between the support thimbles 14 and the chip 15 is as small as possible to minimize the heat conducted through the support thimbles 14, further ensuring the temperature uniformity at each position of the chip 15.
[0046] According to some embodiments of the present invention, the side plate 13 is a non-closed frame structure. The side plate 13 includes a loading port 16 communicating with the heating cavity 101. This design facilitates operators or automated manipulators to directly access the internal heating cavity 101 through the loading port 16 provided on the side plate 13. The chip 15 can be moved into or out of the heating cavity 101 through the loading port 16. The existence of the loading port 16 enables materials such as the chip 15 to be conveniently and directly fed into or taken out of the heating cavity, simplifies the processing process of the chip 15, and improves the working efficiency of the annealing device.
[0047] According to some embodiments of the present utility model, the annealing device 100 further includes: a gas detection device and a control valve 31. The gas detection device is configured to be multiple and corresponding to each heating tray one by one, and is used to detect the gas concentration in the corresponding heating chamber 101; the control valve 31 is arranged in each branch flow path 211, and the control valve 31 is used to adjust the gas flow rate of each branch flow path 211.
[0048] In some specific embodiments, a gas detection device and a control valve 31 are further provided in the annealing device 100. A gas detection device corresponding thereto is configured inside each heating tray. The gas detection device is responsible for monitoring the gas concentration in the heating chamber 101 where it is located, and instantaneously obtaining the concentration information of key components such as oxygen, inert gas, and reducing gas in the heating chamber 101 to ensure that the gas components in the heating chamber 101 are at a set value. A control valve 31 is arranged on each branch flow path 211. According to the information fed back by the gas detection device, the control valve 31 can be adjusted automatically or manually to precisely control the gas volume flowing into each heating chamber 101 to ensure that the gas environment in each heating chamber 101 is stable and consistent.
[0049] In addition, a heating module 32 and a temperature sensor 102 are further arranged on each branch flow path 211. The heating module 32 can heat the air flow in the branch flow path 211, and the temperature sensor 102 can feedback the temperature information of the air flow in the branch flow path 211 to ensure that the gas temperature flowing into the heating chamber 101 is the required set temperature.
[0050] According to some embodiments of the present utility model, the annealing device 100 further includes: a gas extraction device. The gas extraction device is communicated with the air outlet channel 22 and is adapted to drive the gas flow in the air outlet channel 22.
[0051] In some specific implementations, the air outlet channel can be configured as an air outlet hole formed on the side plate 13. A gas extraction device connected to the air outlet hole is further arranged in the annealing device 100. The gas extraction device can effectively extract the gas in the heating chamber 101 through the air outlet hole, thereby maintaining the freshness and composition ratio of the gas in the heating chamber 101, enabling the heating chamber 101 to be in a specific atmosphere (such as an inert gas environment), and improving the performance of the finally formed perovskite chip 15.
[0052] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model.
[0053] In the description of the present utility model, the "first feature" and the "second feature" may include one or more of such features.
[0054] In the description of the present utility model, the meaning of "a plurality of" is two or more.
[0055] In the description of the present utility model, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through additional features therebetween.
[0056] In the description of the present utility model, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature.
[0057] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
[0058] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.
Claims
1. An annealing device, characterized in that: include: A box body, wherein a receiving space is provided in the box body; A heating tray, the heating tray being received in the receiving space and provided with a heating cavity (101) for receiving a chip; An air supply device is provided with an air supply channel (21) and an air outlet channel (22), wherein the air supply channel (21) and the air outlet channel (22) are respectively connected to the heating chamber (101); the air supply device forms a carrier gas flow for carrying the exhaust gas in the heating chamber (101).
2. The annealing device according to claim 1, characterized in that: The heating tray is constructed to be a plurality of heating trays spaced apart in the height direction within the accommodation space, and the air supply channel (21) and the air outlet channel (22) are respectively connected to the heating chambers (101) within the plurality of heating trays.
3. The annealing device according to claim 2, characterized in that: The air supply channel (21) comprises: A main pipeline, one end of which is connected to a gas source; A branch flow path (211), wherein the branch flow path (211) is arranged in each of the heating trays and is respectively connected to the main pipeline, and each of the branch flow paths (211) is provided with an outlet (102) connected to the heating chamber (101).
4. The annealing device according to claim 3, characterized in that: The branch flow paths (211) are structured as a plurality of branch flow paths arranged at intervals in the heating chamber (101), and each branch flow path (211) includes an outlet (102) communicating with the heating chamber (101).
5. The annealing device according to claim 1, characterized in that: The heating tray comprises: A bottom plate (12), the bottom plate (12) being used to support the chip, and the air outlet end of the air supply channel (21) being correspondingly arranged on the bottom plate (12); A side plate (13), wherein the side plate (13) is arranged on the outer periphery of the bottom plate (12) and surrounds the heating chamber (101) together with the bottom plate (12), and an air inlet end of the air outlet channel (22) is arranged on the side plate (13).
6. The annealing device according to claim 5, characterized in that: Also includes: A heating device (11), wherein the heating device (11) is arranged in the heating cavity (101) or in the bottom plate (12), and the heating device (11) is used to heat the heating cavity (101).
7. The annealing device according to claim 5, characterized in that: A plurality of support pins (14) arranged at intervals are formed on the top surface of the base plate (12), and the support pins (14) are used to support the chip (15) at a distance from the base plate (12).
8. The annealing device according to claim 5, characterized in that: The side plate (13) is a non-enclosed frame structure, and the side plate (13) includes a loading port (16) connected to the heating chamber (101); the chip (15) is moved into or out of the heating chamber (101) through the loading port (16).
9. The annealing device according to claim 3, characterized in that: Also includes: A gas detection device, the gas detection device being structured as a plurality of devices corresponding one to one with the heating trays and used for detecting the gas concentration in the corresponding heating chamber (101); And / or, a control valve (31), wherein the control valve (31) is arranged in each of the branch flow paths (211), and the control valve (31) is used to adjust the gas flow rate of each of the branch flow paths (211).
10. The annealing device according to claim 1, characterized in that: Also includes: An air pumping device is connected to the air outlet channel (22) and is suitable for driving the flow of gas in the air outlet channel (22).