Collimator and magnetron sputtering equipment
By setting a sub-grid plate with included angles in the collimator, the channel width gradually increases from the center to the edge, solving the problem of insufficient filtering capacity of the collimator, achieving uniform deposition of the film thickness on the substrate surface, and improving the uniformity of the coating process.
Patent Information
- Application Number
- CN202421811020.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-29
- Publication Date
- 2025-06-06
- Estimated Expiration
- 2034-07-29
AI Technical Summary
In the existing magnetron sputtering technology, the filtering capacity of the collimator is insufficient, resulting in uneven thickness of the substrate surface film layer, affecting the uniformity of the coating process.
A new collimator is designed, by providing a sub-grid plate with an angle between the annular side plate and the grid plate, the width of the channel gradually increases from the center to the edge, thereby improving the filtering capacity of the collimator.
Through this design, the particles passing through the edge channel can be made the same concentration as the particles passing through the central channel, ensuring that the thickness of the film deposited on the substrate surface is more uniform, and improving the uniformity of the coating process.
Smart Images
Figure CN222948456U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductors, in particular to a collimator and magnetron sputtering equipment. Background Art
[0002] With the rapid development of the electronics industry, the demand for semiconductor products is also increasing day by day. In the semiconductor processing technology, physical vapor deposition (PVD) is a commonly used technology for depositing thin films on the surface of substrates, and magnetron sputtering technology is the most widely used type of thin film deposition technology in PVD technology.
[0003] The existing magnetron sputtering technology is realized by magnetron sputtering equipment. During the magnetron sputtering process, the reaction gas in the vacuum chamber is ionized to generate plasma. The plasma bombards the target material, causing the target material to be sputtered, thereby depositing a thin film on the substrate. However, the target particles generated by sputtering have a large exit angle, so the large-angle particles cannot enter the grooves on the surface of the substrate to achieve film coating on the groove surface. In addition, the large-angle particles will also accumulate at the opening of the groove, thereby affecting the subsequent particles from entering the groove and forming a cavity. Therefore, in order to solve the above problems, technicians usually choose to install a device such as a sputtering device between the substrate and the target material. Figure 1 As shown in the collimator (Collimator). Figure 2 As shown, when the plasma bombards the target material 21 to cause sputtering, the collimator 22 can filter some large-angle particles to ensure that only small-angle particles reach the surface of the substrate 23, so as to increase the step coverage and reduce the asymmetry.
[0004] In the early stage of magnetron sputtering process, since the concentration of sputtered ions from the target in the center area is higher than that at the edge, the deposition in the center area of the substrate will be too thick and the deposition in the edge area will be thinner. As the particles deposit on the collimator surface become thicker, the original aspect ratio of the collimator will change, making the path through which the particles can pass narrower. The thickness of the particles deposited in the center area of the collimator is greater than the thickness of the particles deposited in the outer circle area of the collimator. As the target material consumption increases, the filtering capacity of the center area of the collimator is enhanced relative to the outer circle of the collimator, thereby affecting the process uniformity.
[0005] Therefore, how to improve the filtering ability of the collimator and improve the uniformity of the coating process is a problem that needs to be solved at present. Summary of the invention
[0006] The technical problem to be solved by the utility model is how to improve the filtering ability of the collimator and enhance the uniformity of the coating process, and provides a collimator and a magnetron sputtering device.
[0007] In order to solve the above problems, the utility model provides a collimator for magnetron sputtering equipment, comprising: an annular side plate, a plurality of the annular side plates are nested; a grid plate, located between two adjacent annular side plates, a channel is formed between the two adjacent grid plates; each of the grid plates comprises two connected sub-grid plates, the two sub-grid plates are arranged axially along the annular side plate, and the two sub-grid plates form an angle, wherein the angle between the two sub-grid plates of the grid plate on the outer side of the annular side plate is greater than the angle between the two sub-grid plates of the grid plate on the inner side of the annular side plate, so that the width of the channel formed between the two adjacent grid plates on the outer side of the annular side plate is greater than the width of the channel formed between the two adjacent grid plates on the inner side of the annular side plate.
[0008] In order to solve the above problems, the utility model provides a magnetron sputtering device, including: a vacuum chamber; a substrate carrier, located in the vacuum chamber and used to carry a substrate; a target material, located in the vacuum chamber and above the substrate carrier; a collimator, located between the substrate carrier and the target material, and the collimator adopts the collimator described in the utility model.
[0009] The above technical solution increases the thickness of the grid plate by setting a sub-grid plate with an angle, so that the width of the channel gradually increases from the center to the edge, making it easier for particles to pass through the edge of the collimator than the center. In the magnetron sputtering process, since the concentration of target particles in the middle position is higher and the concentration of target particles in the edge position is lower, the use of existing collimators is prone to uneven film thickness in the middle of the substrate and thin film thickness at the edge. Therefore, the collimator in which the width of the channel gradually increases from the center to the edge of the utility model is used, so that the concentration of particles passing through the edge channel is the same as that of particles passing through the center channel, which can make the thickness of the film layer deposited on the surface of the substrate more uniform.
[0010] It should be understood that the above general description and the detailed description below are only exemplary and explanatory and cannot limit the present invention. The techniques, methods and devices known to ordinary technicians in the relevant field may not be discussed in detail, but in appropriate cases, the techniques, methods and devices should be considered as part of the authorization specification. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order to more clearly illustrate the technical solutions in the specific implementation of the utility model, the following is a brief introduction to the drawings required for the description of the specific implementation. Obviously, the drawings described below are only some specific implementations of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0012] Figure 1 It is a schematic diagram of the structure of a collimator in the prior art.
[0013] Figure 2 It is a schematic diagram of the structure of a magnetron sputtering device in the prior art.
[0014] Figure 3 The figure is a schematic top view of the structure of an embodiment of the collimator of the utility model.
[0015] Figure 4 It is a schematic diagram of the channel width of an embodiment of the collimator of the utility model.
[0016] Figure 5 It is a structural schematic diagram of an embodiment of the magnetron sputtering equipment of the utility model.
[0017] Figure 6 This is a state diagram of the collimator of an embodiment of the magnetron sputtering equipment of the utility model before the process starts.
[0018] Figure 7 This is a state diagram of a collimator during a process of an embodiment of the magnetron sputtering equipment described in the utility model. DETAILED DESCRIPTION
[0019] The technical scheme in the embodiment of the utility model will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.
[0020] Please also read Figure 3-4 ,in, Figure 3 It is a schematic diagram of a top view of the structure of an embodiment of the collimator of the utility model; Figure 4 Schematic diagram of the channel width of an embodiment of the collimator of the utility model. The collimator is used in magnetron sputtering equipment, such as Figure 3-4As shown, the collimator includes: an annular side plate 31 and a grid plate 32. A plurality of the annular side plates 31 are nested. The grid plate 32 is located between two adjacent annular side plates 31, and a channel 33 is formed between two adjacent grid plates 32. Each grid plate 32 includes two connected sub-grid plates 320, the two sub-grid plates 320 are arranged along the axial direction D1 of the annular side plate 320, and the two sub-grid plates 320 form an angle, wherein the angle between the two sub-grid plates 320 of the grid plate 32 on the outer side of the annular side plate 31 is greater than the angle between the two sub-grid plates 320 of the grid plate 32 on the inner side of the annular side plate 31, so that the width of the channel 33 formed between the two adjacent grid plates 32 on the outer side of the annular side plate 31 is greater than the width of the channel 33 formed between the two adjacent grid plates 32 on the inner side of the annular side plate 31.
[0021] The above technical solution increases the thickness of the grid plate by setting a sub-grid plate with an angle, so that the width of the channel gradually increases from the center to the edge, making it easier for particles to pass through the edge of the collimator than the center. In the magnetron sputtering process, since the concentration of target particles in the middle position is higher and the concentration of target particles in the edge position is lower, the use of existing collimators is prone to uneven film thickness in the middle of the substrate and thin film thickness at the edge. Therefore, the collimator in which the width of the channel gradually increases from the center to the edge of the utility model is used, so that the concentration of particles passing through the edge channel is the same as that of particles passing through the center channel, which can make the thickness of the film layer deposited on the surface of the substrate more uniform.
[0022] In this embodiment, the collimator includes three layers of grid plates 32, which are respectively located in the central area, the sub-central area, and the edge area. The angle α1 between the two sub-grid plates 320 of the grid plate 32 in the central area is the smallest, and the angle α1 is 164.8°; the angle α2 between the two sub-grid plates 320 of the grid plate 32 in the sub-central area is greater than the angle α1; the angle between the two sub-grid plates 320 of the grid plate 32 in the edge area is the largest, which is a straight angle (that is, 180°). Therefore, the width W1 of the channel 33 formed between the two adjacent grid plates 32 in the central area is the smallest, the width W2 of the channel 33 formed between the two adjacent grid plates 32 in the sub-central area is greater than the width W1 of the channel 33 in the central area, and the width W3 of the channel 33 formed between the two adjacent grid plates 32 in the edge area is the largest; that is, the width of each channel 33 gradually increases from the center to the edge of the collimator.
[0023] In some embodiments, at least one of the sub-grid plates 320 in each of the grid plates 32 can rotate along the connection point 321 of the two sub-grid plates 320 to adjust the angle of the two sub-grid plates 320. During the magnetron sputtering process, the sputtered particles deposit thicker on the collimator surface, the original aspect ratio will change, and the channel 33 will become narrower; and the thickness of the deposition at the center of the collimator is greater than the thickness of the deposition at the edge, which will cause the number of particles passing through the center channel to be reduced relative to the number of particles passing through the edge channel, resulting in uneven thickness of the film layer on the substrate surface. Therefore, by setting the collimator grid plate to be rotatable at a certain angle, adjusting the angle of the sub-grid plate 320, and reducing the thickness of the grid plate 32, the original width of the channel 33 is maintained to control the amount of particles reaching the substrate surface and ensure the uniformity of the film layer thickness on the substrate surface.
[0024] In some embodiments, the two sub-grid plates 320 in each of the grid plates 32 are capable of rotating along the connection point 321 of the two sub-grid plates 320, and the two sub-grid plates 320 are always symmetrically arranged along the radial direction of the annular side plate 31 to ensure that the upper and lower thicknesses of the grid plates 32 are consistent, thereby ensuring that the widths of the channels 33 are consistent from top to bottom, thereby ensuring the uniformity of the thickness of the film layer on the surface of the substrate.
[0025] In some embodiments, the diameter of the collimator is 45 cm to 50 cm; the thickness of the collimator is 15 cm to 25 cm; the thickness of the annular side plate 31 and the sub-grid plate 320 is 3 mm to 5 mm. In this embodiment, the diameter of the collimator is 48 mm, the thickness of the collimator is 20 mm, and specifically, the thickness of each sub-grid plate 320 is 10 mm.
[0026] In some embodiments, a flange 34 is formed on the outer edge of the collimator for connecting to an external structure.
[0027] In some embodiments, the collimator is made of aluminum or stainless steel, and the surfaces of the annular side plate 31 and the sub-grid plate 320 include a sandblasting layer.
[0028] Based on the same inventive concept, an embodiment of the utility model further provides a magnetron sputtering device.
[0029] See also Figure 5 , which is a schematic diagram of the structure of an embodiment of the magnetron sputtering device of the utility model. Figure 5As shown, the magnetron sputtering device includes: a vacuum chamber 51, a substrate stage 52, a target material 53, and a collimator 54. The substrate stage 52 is located in the vacuum chamber 51 and is used to carry a substrate 59. The target material 53 is located in the vacuum chamber 51 and above the substrate stage 52. The collimator 54 is located between the substrate stage 52 and the target material 53. The collimator 54 adopts the present invention. Figure 3-4 The collimator shown.
[0030] The above technical solution increases the thickness of the grid plate by setting a sub-grid plate with an angle, so that the width of the channel gradually increases from the center to the edge, making it easier for particles to pass through the edge of the collimator than the center. In the magnetron sputtering process, since the concentration of target particles in the middle position is higher and the concentration of target particles in the edge position is lower, the use of existing collimators is prone to uneven film thickness in the middle of the substrate and thin film thickness at the edge. Therefore, the collimator in which the width of the channel gradually increases from the center to the edge of the utility model is used, so that the concentration of particles passing through the edge channel is the same as that of particles passing through the center channel, which can make the thickness of the film layer deposited on the surface of the substrate more uniform.
[0031] In some embodiments, the target material 53 includes a metal target material, a ceramic target material, an alloy target material, etc., and the substrate 59 includes a silicon wafer used to make silicon semiconductor circuits; the inert gas used in the magnetron sputtering process can be argon.
[0032] In some embodiments, a flange 34 is formed on the outer edge of the collimator 54 , and the collimator 54 is connected to the vacuum chamber 51 via the flange 34 .
[0033] See also Figure 6 , which is a state diagram of the collimator of an embodiment of the magnetron sputtering device of the utility model before the process starts. Figure 6 As shown, before the process of the magnetron sputtering device starts, the collimator 54 can adjust the angle between the two sub-grid plates 320 of the grid plate 32, so that the width of each channel 33 of the collimator 54 gradually increases from the center to the edge of the collimator 54. During the magnetron sputtering process, since the concentration of target particles in the middle position is higher and the concentration of target particles in the edge position is lower, the use of existing collimators is prone to uneven film thickness in the middle of the substrate 59, such as thicker film thickness and thinner film thickness at the edge. Therefore, the collimator 54 in the utility model whose channel width gradually increases from the center to the edge is used, so that the concentration of particles passing through the edge channel 33 is the same as that of particles passing through the center channel 33, which can make the thickness of the film layer deposited on the surface of the substrate 59 more uniform.
[0034] In this embodiment, the collimator includes three layers of grid plates 32, which are respectively located in the central area, the sub-central area, and the edge area. The angle α1 between the two sub-grid plates 320 of the grid plate 32 in the central area is the smallest, and the angle α1 is 164.8°; the angle α2 between the two sub-grid plates 320 of the grid plate 32 in the sub-central area is greater than the angle α1; the angle between the two sub-grid plates 320 of the grid plate 32 in the edge area is the largest, which is a straight angle (that is, 180°). Therefore, the width W1 of the channel 33 formed between the two adjacent grid plates 32 in the central area is the smallest, the width W2 of the channel 33 formed between the two adjacent grid plates 32 in the sub-central area is greater than the width W1 of the channel 33 in the central area, and the width W3 of the channel 33 formed between the two adjacent grid plates 32 in the edge area is the largest; that is, the width of each channel 33 gradually increases from the center to the edge of the collimator.
[0035] See also Figure 7 , which is a state diagram of the collimator of an embodiment of the magnetron sputtering device of the utility model during the process. Figure 7 As shown, during the process of the magnetron sputtering device, the collimator 54 can adjust the angle between the two sub-grid plates 320 of the grid plate 32, so that the width of each channel 33 of the collimator 54 is the same as before the process starts. During the magnetron sputtering process, the sputtered particles are deposited thicker on the surface of the collimator 54 (the particle layer deposited on the surface of the collimator is shown as label 70), the original aspect ratio will change, and the channel 33 will become narrower; and the thickness of the deposition at the center of the collimator 54 is greater than the thickness of the deposition at the edge, which will cause the number of particles passing through the channel 33 at the center of the collimator 54 to be reduced relative to the number of particles passing through the channel 33 at the edge of the collimator 54, resulting in uneven thickness of the film layer on the surface of the substrate 59. Therefore, the angle of the sub-grid plate 320 is adjusted to reduce the thickness of the grid plate 32 to maintain the original width of the channel 33, thereby ensuring the uniformity of the film layer thickness on the surface of the substrate 59. Specifically, the angle α1 between the two sub-grid plates 320 of the grid plate 32 in the central area is adjusted to an angle α1' (the angle of α1' is greater than α1), so that the width of the channel 33 is increased, and the width of the channel 33 after the particles are deposited is still the width W1; the angle α2 between the two sub-grid plates 320 of the grid plate 32 in the sub-central area is adjusted to an angle α2' (the angle of α2' is greater than α2), so that the width of the channel 33 is increased, and the width of the channel 33 after the particles are deposited is still the width W2. In this embodiment, the angle between the two sub-grid plates 320 in the edge area is a flat angle and is not adjusted.
[0036] This design can improve the uniformity of film thickness between the center and edge of the substrate by optimizing the collimator and increasing the stability of the process.
[0037] It should be noted that references in the specification to "an embodiment", "an embodiment", "an exemplary embodiment", "some embodiments", etc. indicate that the described embodiment may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. In addition, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, whether or not explicitly described, it is within the knowledge of a technician in the relevant art to implement such feature, structure, or characteristic in conjunction with other embodiments.
[0038] Typically, a term can be understood at least in part from usage in context. For example, the term "one or more" as used herein depends at least in part on the context and can be used to describe any feature, structure or characteristic in a singular sense, or can be used to describe a combination of features, structures or features in a plural sense. Similarly, terms such as "one", "a" or "the" can also be understood to express singular usage or to express plural usage, depending at least in part on the context. In addition, the term "based on" can be understood to not necessarily be intended to express a set of exclusive factors, but can alternatively, also at least in part depending on the context, allow for the presence of other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected / coupled" refers not only to the direct coupling of one component to another component, but also to the indirect coupling of one component to another component through an intermediate component.
[0039] It should be noted that the terms "including" and "having" and their variations involved in the documents of the present utility model are intended to cover non-exclusive inclusions. The terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. Unless the context clearly indicates otherwise, it should be understood that the data used in this way can be interchanged under appropriate circumstances. In addition, the embodiments of the present utility model and the features in the embodiments can be combined with each other unless there is a conflict. In addition, in the above description, the description of well-known components and technologies is omitted to avoid unnecessary confusion of the concepts of the present utility model. In the above-mentioned embodiments, each embodiment focuses on the differences from other embodiments, and the same / similar parts between the embodiments can be referred to each other.
[0040] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.
Claims
1. A collimator for a magnetron sputtering device, characterized in that: include: An annular side plate, a plurality of the annular side plates are nested; A grid plate is located between two adjacent annular side plates, and a channel is formed between the two adjacent grid plates; Each of the grid plates includes two connected sub-grid plates, which are arranged axially along the annular side plate and form an angle between the two sub-grid plates, wherein the angle between the two sub-grid plates of the grid plate on the outer side of the annular side plate is greater than the angle between the two sub-grid plates of the grid plate on the inner side of the annular side plate, so that the channel width formed between the two adjacent grid plates on the outer side of the annular side plate is greater than the channel width formed between the two adjacent grid plates on the inner side of the annular side plate.
2. The collimator according to claim 1, characterized in that At least one of the sub-grid plates in each of the grid plates can rotate along the connection point of the two sub-grid plates to adjust the angle between the two sub-grid plates.
3. The collimator according to claim 1, characterized in that: The two sub-grid plates in each of the grid plates are both capable of rotating along the connection point of the two sub-grid plates, and the two sub-grid plates are always symmetrically arranged along the radial direction of the annular side plate.
4. The collimator according to claim 1, characterized in that: The width of each channel gradually increases from the center to the edge of the collimator.
5. The collimator according to claim 1, characterized in that: The diameter of the collimator is 45 cm to 50 cm; the thickness of the collimator is 15 cm to 25 cm.
6. The collimator according to claim 1, characterized in that: The collimator is made of aluminum or stainless steel, and the surfaces of the annular side plate and the sub-grid plate include a sandblasting layer.
7. A magnetron sputtering device, characterized in that: include: Vacuum chamber; A substrate carrier, located in the vacuum chamber and used for carrying a substrate; A target material is located in the vacuum chamber and above the substrate stage; A collimator is located between the substrate carrier and the target, and the collimator is the collimator as claimed in any one of claims 1 to 6.
8. The magnetron sputtering device according to claim 7, characterized in that: A flange is formed on the outer edge of the collimator, and the collimator is connected to the vacuum chamber through the flange.
9. The magnetron sputtering device according to claim 7, characterized in that: Before the process of the magnetron sputtering device starts, the collimator can adjust the angle between the two sub-grid plates of the grid plate so that the width of each channel of the collimator gradually increases from the center to the edge of the collimator.
10. The magnetron sputtering device according to claim 7, characterized in that: During the process of the magnetron sputtering device, the collimator can adjust the angle between the two sub-grid plates of the grid plate so that the width of each channel of the collimator is the same as that before the process starts.