Cleaning device for high-purity copper sputtering target material

Abstract

The invention relates to a cleaning device for a high-purity copper sputtering target, which is characterized in that the high-purity copper sputtering target is placed in a cleaning tank, a transducer is arranged at the bottom outside the cleaning tank, the transducer is connected with an ultrasonic generator, and deionized water and an organic solvent are used for ultrasonic cleaning to remove particles and organic matters on the surface of the high-purity copper sputtering target. The high-purity copper sputtering target material is placed on the movable supporting structure, the movable supporting structure not only can change the contact part with the high-purity copper sputtering target material to avoid the existence of a cleaning blind area, but also enables the high-purity copper sputtering target material to move in the cleaning tank, so that the cleaning effect is improved.

Description

Technical Field

[0001] The invention relates to a target material cleaning device, in particular to a cleaning device for high-purity copper sputtering target material. Background Art

[0002] If the high-purity copper sputtering target is not cleaned properly, it will lead to a series of problems such as residual contaminants on the surface, residual oxide layer, impurity contamination, decreased sputtering efficiency, film quality problems, equipment contamination and decreased product yield.

[0003] When ultrasonically cleaning high-purity copper sputtering targets, they must be secured in the cleaning tank to prevent vibrations and damage. Using specialized fixtures, brackets, or trays effectively protects the target, ensuring effective cleaning and equipment safety.

[0004] However, when using the above-mentioned clamps, brackets or trays, the contact areas between the clamps, brackets or trays and the copper target may make it difficult to clean the dirt there. The existing technology uses a segmented cleaning method, which usually requires manual operation or automated mechanical mechanism to operate.

[0005] However, the target cleaning environment usually needs to be highly clean and strictly controlled, so it is beneficial to minimize the presence of personnel and perform cleaning through automatic control.

[0006] At the same time, the automated mechanical mechanism needs to be installed on the cleaning tank. When the ultrasonic generator and transducer are working, the cleaning tank is in a vibrating state. Installing the automated mechanical mechanism on the cleaning tank may destroy the sealing of the cleaning tank and also affect the service life of the automated mechanical mechanism.

[0007] Therefore, a new cleaning device is needed to solve the problem of incomplete cleaning of high-purity copper sputtering targets, while avoiding manual influence or the influence of the transducer on the automated mechanical mechanism. Summary of the Invention

[0008] The present invention designs a cleaning device for high-purity copper sputtering targets, which solves the following technical problems: (1) When high-purity copper sputtering targets are ultrasonically cleaned, the targets need to be fixed in the cleaning tank. Using a clamp, bracket, or tray to fix the target makes it difficult to clean the dirt at the contact point with the copper target. (2) The automated mechanical mechanism needs to be installed in the cleaning tank. When the ultrasonic generator and transducer are working, the cleaning tank is in a vibrating state. Installing the automated mechanical mechanism in the cleaning tank may damage the sealing of the cleaning tank and also affect the service life of the automated mechanical mechanism.

[0009] In order to solve the above-mentioned technical problems, the present invention adopts the following solutions:

[0010] A cleaning device for a high-purity copper sputtering target is provided. The high-purity copper sputtering target is placed in a cleaning tank. A transducer is provided at the bottom outside the cleaning tank. The transducer is connected to an ultrasonic generator. Deionized water and an organic solvent are used for ultrasonic cleaning to remove particles and organic matter on the surface of the high-purity copper sputtering target. The high-purity copper sputtering target is placed on a movable support structure. The movable support structure can not only change the contact position with the high-purity copper sputtering target to avoid the existence of a cleaning blind area, but also enable the high-purity copper sputtering target to move in the cleaning tank, thereby improving the cleaning effect.

[0011] Preferably, the movable support structure includes a left movable support mechanism, which consists of a left transmission gear, a left first vertical moving member and a left second vertical moving member. A left first rack is provided on one side of the left first vertical moving member, and a left second rack is provided on one side of the left second vertical moving member. The left transmission gear is clamped between the left first rack and the left second rack; the left first vertical moving member and the left second vertical moving member are ensured by a first limiting mechanism to only move in the vertical direction and always remain engaged with the left transmission gear; when the moving left first vertical moving member and the moving left second vertical moving member alternately support the high-purity copper sputtering target, the supporting parts of the left first vertical moving member and the left second vertical moving member and the high-purity copper sputtering target are exposed, so that the dirt on the two supporting parts can be cleaned; when the moving left first vertical moving member and the moving left second vertical moving member alternately support the high-purity copper sputtering target, the reciprocating motion of the high-purity copper sputtering target in the vertical direction helps to uniformly clean, enhance the cavitation effect, reduce local overheating and improve the cleaning efficiency.

[0012] Preferably, the movable support structure includes a right movable support mechanism, which is composed of a right transmission gear, a right first vertical moving member and a right second vertical moving member. A right first rack is provided on one side of the right first vertical moving member, and a right second rack is provided on one side of the right second vertical moving member. The right transmission gear is clamped between the right first rack and the right second rack; the right first vertical moving member and the right second vertical moving member are ensured by a second limiting mechanism to be able to move only in the vertical direction and always remain engaged with the right transmission gear; when the moving right first vertical moving member and the right second vertical moving member alternately support the high-purity copper sputtering target, the supporting parts of the right first vertical moving member and the right second vertical moving member and the high-purity copper sputtering target are exposed, so that the dirt on the two supporting parts can be cleaned; when the moving right first vertical moving member and the moving right second vertical moving member alternately support the high-purity copper sputtering target, the reciprocating motion of the high-purity copper sputtering target in the vertical direction helps to uniformly clean, enhance the cavitation effect, reduce local overheating and improve the cleaning efficiency.

[0013] Preferably, the total weight of the left second vertical moving member and the right first vertical moving member is greater than the weight of the high-purity copper sputtering target and when the left first vertical moving member and the right second vertical moving member support the high-purity copper sputtering target, the left second vertical moving member and the right first vertical moving member move downward, and the left first vertical moving member and the right second vertical moving member move upward.

[0014] Preferably, the lower end of the left second vertical moving member has a left transmission inclined plane, and the lower end of the right first vertical moving member has a right transmission inclined plane; the left driving mechanism acts horizontally on the left transmission inclined plane to move the left second vertical moving member upward; the left driving mechanism leaves the left transmission inclined plane horizontally, and the left second vertical moving member moves downward under the action of its own gravity; the right driving mechanism acts horizontally on the right transmission inclined plane to move the right first vertical moving member upward; the right driving mechanism leaves the right transmission inclined plane horizontally, and the right first vertical moving member moves downward under the action of its own gravity.

[0015] Preferably, the left driving mechanism is located outside the cleaning tank, the left driving mechanism includes a left cylinder, the cylinder rod of the left cylinder is connected to a left electromagnet, a left horizontal moving driving block is provided at the bottom of the cleaning tank, a left horizontal moving driving block is provided with a left magnetic body, the left electromagnet can sense and adsorb the left magnetic body, the cylinder rod of the left cylinder is extended and retracted to make the left electromagnet move horizontally, and the left electromagnet causes the left magnetic body and the left horizontal moving driving block to move horizontally through magnetic induction; the right driving mechanism is located outside the cleaning tank, the right driving mechanism includes a right cylinder, the cylinder rod of the right cylinder is connected to a right electromagnet, a right horizontal moving driving block is provided at the bottom of the cleaning tank, a right magnetic body is provided in the right horizontal moving driving block, the right electromagnet can sense and adsorb the right magnetic body, the cylinder rod of the right cylinder is extended and retracted to make the right electromagnet move horizontally, and the right electromagnet causes the right magnetic body and the right horizontal moving driving block to move horizontally through magnetic induction.

[0016] Preferably, a first Teflon support block is provided on the top of the left first vertical moving member, a second Teflon support block is provided on the top of the left second vertical moving member, a third Teflon support block is provided on the top of the right first vertical moving member, and a fourth Teflon support block is provided on the top of the right second vertical moving member.

[0017] Preferably, the cylinder rod of the left drive mechanism and the cylinder rod of the right drive mechanism have the same moving speed, so that the high-purity copper sputtering target material maintains a horizontal state and performs vertical reciprocating movement, or the cylinder rod of the left drive mechanism and the cylinder rod of the right drive mechanism have different moving speeds, so that the high-purity copper sputtering target material maintains a horizontal state and performs vertical reciprocating movement.

[0018] Preferably, the transducer is arranged at the outer bottom of the cleaning tank, an electromagnetic shielding device is provided outside the transducer to reduce interference of the electromagnet thereon, and the cleaning tank is made of stainless steel.

[0019] A cleaning method for a high-purity copper sputtering target cleaning device comprises the following steps:

[0020] Step 1: When the left first vertical moving member and the right second vertical moving member support the high-purity copper sputtering target, deionized water and an organic solvent are injected into the cleaning tank, and the ultrasonic generator and transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target by ultrasonic cleaning;

[0021] Step 2: After the ultrasonic generator and transducer have been operating for N minutes, N>0, the left cylinder and the right cylinder are started simultaneously, and the left cylinder and the right cylinder extend the cylinder rods at the same speed. The left cylinder causes the left horizontal moving drive block to move horizontally through the electromagnet and act on the left transmission ramp. The left second vertical moving member moves upward and ultimately supports the high-purity copper sputtering target that moves downward. The right cylinder causes the right horizontal moving drive block to move horizontally through the electromagnet and act on the right transmission ramp. The right first vertical moving member moves upward and ultimately supports the high-purity copper sputtering target that moves downward. The right first vertical moving member and the left second vertical moving member jointly support the high-purity copper sputtering target in a horizontal state.

[0022] Step 3: When the left second vertical moving member and the right first vertical moving member fully support the high-purity copper sputtering target, the left first vertical moving member and the right second vertical moving member are separated from the high-purity copper sputtering target, and the contact areas of the three members can be exposed and cleaned with deionized water and an organic solvent; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target can enhance the cleaning effect;

[0023] Step 4. After the ultrasonic generator and transducer work for M minutes, M>0, the left cylinder and the right cylinder retract the cylinder rod at the same speed, the left cylinder uses the electromagnet to make the left horizontal moving drive block leave the left transmission inclined plane, and the right cylinder uses the electromagnet to make the right horizontal moving drive block leave the right transmission inclined plane, the left second vertical moving part and the right first vertical moving part reset under the action of their own gravity, and at the same time the left first vertical moving part and the right second vertical moving part move upward to re-support the high-purity copper sputtering target.

[0024] A cleaning method for a high-purity copper sputtering target cleaning device comprises the following steps:

[0025] Step 1: When the left first vertical moving member and the right second vertical moving member support the high-purity copper sputtering target, deionized water and an organic solvent are injected into the cleaning tank, and the ultrasonic generator and transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target by ultrasonic cleaning;

[0026] Step 2: After the ultrasonic generator and transducer have been operating for N minutes, N>0, the left cylinder and the right cylinder are started simultaneously, and the left cylinder and the right cylinder extend the cylinder rods at different speeds. The left cylinder causes the left horizontal moving drive block to move horizontally through the electromagnet and act on the left transmission ramp, and the left second vertical moving member moves upward and ultimately supports the high-purity copper sputtering target moving downward. The right cylinder causes the right horizontal moving drive block to move horizontally through the electromagnet and act on the right transmission ramp, and the right first vertical moving member moves upward and ultimately supports the high-purity copper sputtering target moving downward. The different distances moved by the right first vertical moving member and the left second vertical moving member cause the high-purity copper sputtering target to tilt at a certain angle.

[0027] Step 3. When the left second vertical moving member and the right first vertical moving member fully support the tilted high-purity copper sputtering target, the left first vertical moving member and the right second vertical moving member are separated from the high-purity copper sputtering target, and the contact parts of the three can be exposed and cleaned by deionized water and organic solvents; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target can enhance the cleaning effect.

[0028] Compared with the prior art, the cleaning device for high-purity copper sputtering targets has the following beneficial effects:

[0029] (1) The present invention can not only clean all areas of the target material and avoid the occurrence of cleaning blind areas, but also realize reciprocating movement of the target material, which helps to uniformly clean, enhance the cavitation effect, reduce local overheating and improve cleaning efficiency.

[0030] (2) The present invention drives the mobile support structure from the outside of the cleaning tank through an electromagnet without destroying the sealing of the cleaning tank, which can effectively prevent the cleaning tank from leaking under high-frequency vibration. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 : Schematic diagram of the structure of the moving mechanism in the cleaning device for high-purity copper sputtering target of the present invention;

[0032] Figure 2 : Schematic diagram of the first working state of the cleaning device for high-purity copper sputtering target of the present invention;

[0033] Figure 3 : Schematic diagram of the second working state of the cleaning device of the high-purity copper sputtering target of the present invention.

[0034] Description of reference numerals:

[0035] 1—cleaning tank; 20—left transmission gear; 21—first Teflon support block; 22—left first vertical moving member; 23—left first rack; 31—second Teflon support block; 32—left second vertical moving member; 33—left second rack; 34—left transmission inclined plane; 40—right transmission gear; 41—fourth Teflon support block; 42—right second vertical moving member; 43—right second rack; 51—third Teflon support block; 52—right first vertical moving member; 53—right first rack; 54—right transmission inclined plane; 61—left cylinder; 62—left electromagnet; 63—left horizontal moving drive block; 64—left magnetic body; 71—right cylinder; 72—right electromagnet; 73—right horizontal moving drive block; 74—right magnetic body; 8—transducer; 81—electromagnetic shielding device; 9—high-purity copper sputtering target. DETAILED DESCRIPTION

[0036] The following combination Figures 1 to 3 , the present invention is further described:

[0037] like Figure 1 As shown, the cleaning device for high-purity copper sputtering target of the present invention places high-purity copper sputtering target 9 in a cleaning tank 1, and a transducer 8 is provided at the bottom outside the cleaning tank 1. The transducer 8 is connected to an ultrasonic generator, and deionized water and an organic solvent are used for ultrasonic cleaning to remove particles and organic matter on the surface of the high-purity copper sputtering target 9. The high-purity copper sputtering target 9 is placed on a movable support structure. The movable support structure can not only change the contact part with the high-purity copper sputtering target 9 to avoid the existence of a cleaning blind spot, but also enable the high-purity copper sputtering target 9 to move in the cleaning tank 1 to improve the cleaning effect.

[0038] The cleaning device of the present invention is suitable for high-purity copper sputtering targets, and the purity of the high-purity copper sputtering targets generally ranges from 99.999% (5N) to 99.99999% (7N), and the specific purity depends on the application requirements.

[0039] Improper cleaning of high-purity copper sputtering targets can lead to a range of problems, including residual surface contaminants, residual oxide layers, impurity contamination, decreased sputtering efficiency, film quality issues, equipment contamination, and reduced product yield. Therefore, ensuring the cleanliness of high-purity copper sputtering targets is a critical step in ensuring their performance and the quality of the sputtered films. The use of a mobile support structure in the present invention helps ensure clean target cleaning.

[0040] The mobile support structure includes a left mobile support mechanism, which is composed of a left transmission gear 20, a left first vertical moving member 22 and a left second vertical moving member 32. A left first rack 23 is provided on one side of the left first vertical moving member 22, and a left second rack 33 is provided on one side of the left second vertical moving member 32. The left transmission gear 20 is clamped between the left first rack 23 and the left second rack 33; the left first vertical moving member 22 and the left second vertical moving member 32 are ensured by a first limiting mechanism to only move in the vertical direction and always maintain contact with the left transmission gear 20. Engagement; when the moving left first vertical moving member 22 and the moving left second vertical moving member 32 alternately support the high-purity copper sputtering target 9, the supporting parts of the left first vertical moving member 22 and the left second vertical moving member 32 and the high-purity copper sputtering target 9 are exposed, so that the dirt on the two supporting parts can be cleaned; when the moving left first vertical moving member 22 and the moving left second vertical moving member 32 alternately support the high-purity copper sputtering target 9, the reciprocating motion of the high-purity copper sputtering target 9 in the vertical direction helps to uniformly clean, enhance the cavitation effect, reduce local overheating and improve the cleaning efficiency.

[0041] The mobile support structure includes a right mobile support mechanism, which is composed of a right transmission gear 40, a right first vertical moving member 52 and a right second vertical moving member 42. A right first rack 53 is provided on one side of the right first vertical moving member 52, and a right second rack 43 is provided on one side of the right second vertical moving member 42. The right transmission gear 40 is clamped between the right first rack 53 and the right second rack 43; the right first vertical moving member 52 and the right second vertical moving member 42 are ensured by a second limiting mechanism to only move in the vertical direction and always maintain contact with the right transmission gear 40. Engagement; when the moving right first vertical moving member 52 and the moving right second vertical moving member 42 alternately support the high-purity copper sputtering target 9, the supporting parts of the right first vertical moving member 52 and the right second vertical moving member 42 and the high-purity copper sputtering target 9 are exposed, so that the dirt on the two supporting parts can be cleaned; when the moving right first vertical moving member 52 and the moving right second vertical moving member 42 alternately support the high-purity copper sputtering target 9, the reciprocating motion of the high-purity copper sputtering target 9 in the vertical direction helps to uniformly clean, enhance the cavitation effect, reduce local overheating and improve the cleaning efficiency.

[0042] Specifically, 1. Moving the target exposes its surface to the ultrasonic wave in all directions, avoiding blind spots caused by a fixed position. 2. Moving the target creates a dynamic environment in the cleaning fluid, enhancing the cavitation effect and improving cleaning efficiency. 3. Movement helps disperse the heat generated by the ultrasonic wave, preventing localized overheating that could cause target deformation or damage. 4. Moving the target shortens cleaning time and improves efficiency.

[0043] When the total weight of the left second vertical moving member 32 and the right first vertical moving member 52 is greater than the weight of the high-purity copper sputtering target 9 and the left first vertical moving member 22 and the right second vertical moving member 42 support the high-purity copper sputtering target 9, the left second vertical moving member 32 and the right first vertical moving member 52 move downward, and the left first vertical moving member 22 and the right second vertical moving member 42 move upward.

[0044] The left second vertical moving member 32 has a left transmission inclined surface 34 at its lower end, and the right first vertical moving member 52 has a right transmission inclined surface 54 at its lower end; the left driving mechanism acts horizontally on the left transmission inclined surface 34 to move the left second vertical moving member 32 upward; the left driving mechanism leaves the left transmission inclined surface 34 horizontally, and the left second vertical moving member 32 moves downward under the action of its own gravity; the right driving mechanism acts horizontally on the right transmission inclined surface 54 to move the right first vertical moving member 52 upward; the right driving mechanism leaves the right transmission inclined surface 54 horizontally, and the right first vertical moving member 52 moves downward under the action of its own gravity.

[0045] The left driving mechanism is located outside the cleaning tank 1 and includes a left cylinder 61. The cylinder rod of the left cylinder 61 is connected to a left electromagnet 62. A left horizontal movement driving block 63 is provided at the bottom of the cleaning tank 1. A left magnetic body 64 is provided in the left horizontal movement driving block 63. The left electromagnet 62 can sense and attract the left magnetic body 64. The cylinder rod of the left cylinder 61 is extended and retracted to cause the left electromagnet 62 to move horizontally. The left electromagnet 62 causes the left magnetic body 64 and the left horizontal movement driving block 63 to move horizontally through magnetic induction. The right driving mechanism is located outside the cleaning tank 1. The right driving mechanism includes a right cylinder 71. The cylinder rod of the right cylinder 71 is connected to a right electromagnet 72. A right horizontal moving driving block 73 is provided at the bottom of the cleaning tank 1. The right horizontal moving driving block 73 is provided with a right magnetic body 74. The right electromagnet 72 can sense and absorb the right magnetic body 74. The cylinder rod of the right cylinder 71 is extended and retracted to make the right electromagnet 72 move horizontally. The right electromagnet 72 causes the right magnetic body 74 and the right horizontal moving driving block 73 to move horizontally through magnetic induction.

[0046] A first Teflon support block 21 is provided on top of the left first vertical moving member 22, a second Teflon support block 31 is provided on top of the left second vertical moving member 32, a third Teflon support block 51 is provided on top of the right first vertical moving member 52, and a fourth Teflon support block 41 is provided on top of the right second vertical moving member 42. Choosing a non-reactive material (such as Teflon) to make the support blocks has many advantages, including chemical stability, surface properties, mechanical properties, temperature tolerance, electrical insulation, biocompatibility, and cost-effectiveness.

[0047] The cylinder rod of the left drive mechanism and the cylinder rod of the right drive mechanism move at the same speed, so that the high-purity copper sputtering target 9 maintains a horizontal state and moves vertically back and forth, or the cylinder rod of the left drive mechanism and the cylinder rod of the right drive mechanism move at different speeds, so that the high-purity copper sputtering target 9 moves vertically back and forth in an inclined state.

[0048] The transducer 8 is arranged at the outer bottom of the cleaning tank 1. An electromagnetic shielding device 81 is provided outside the transducer 8 to reduce interference of the electromagnet. The material of the cleaning tank 1 is 304 stainless steel.

[0049] like Figures 2 to 3 As shown, the first cleaning method of the cleaning device of the present invention for high-purity copper sputtering target comprises the following steps:

[0050] Step 1: When the left first vertical moving member 22 and the right second vertical moving member 42 support the high-purity copper sputtering target 9, deionized water and organic solvent are injected into the cleaning tank 1, and the ultrasonic generator and transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target 9 by ultrasonic cleaning.

[0051] Step 2. After the ultrasonic generator and transducer have been working for N minutes, N>0, the left cylinder 61 and the right cylinder 71 are started at the same time. The left cylinder 61 and the right cylinder 71 extend the cylinder rods at the same speed. The left cylinder 61 causes the left horizontal movement drive block 63 to move horizontally through the electromagnet and act on the left transmission ramp 34. The left second vertical moving member 32 moves upward and eventually supports the high-purity copper sputtering target 9 that moves downward. The right cylinder 71 causes the right horizontal movement drive block 73 to move horizontally through the electromagnet and act on the right transmission ramp 54. The right first vertical moving member 52 moves upward and eventually supports the high-purity copper sputtering target 9 that moves downward. The right first vertical moving member 52 and the left second vertical moving member 32 jointly support the high-purity copper sputtering target 9 in the horizontal state.

[0052] Step 3. When the left second vertical moving member 32 and the right first vertical moving member 52 fully support the high-purity copper sputtering target 9, the left first vertical moving member 22 and the right second vertical moving member 42 are separated from the high-purity copper sputtering target 9, and the contact parts of the three can be exposed and cleaned by deionized water and organic solvents; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target 9 can enhance the cleaning effect.

[0053] Step 4. After the ultrasonic generator and transducer work for M minutes, M>0, the left cylinder 61 and the right cylinder 71 retract the cylinder rods at the same speed, the left cylinder 61 uses the electromagnet to make the left horizontal moving drive block 63 leave the left transmission inclined plane 34, and the right cylinder 71 uses the electromagnet to make the right horizontal moving drive block 73 leave the right transmission inclined plane 54, the left second vertical moving member 32 and the right first vertical moving member 52 reset under the action of their own gravity, and at the same time the left first vertical moving member 22 and the right second vertical moving member 42 move upward to re-support the high-purity copper sputtering target 9.

[0054] The second cleaning method of the cleaning device of the present invention for high-purity copper sputtering target comprises the following steps:

[0055] Step 1: When the left first vertical moving member 22 and the right second vertical moving member 42 support the high-purity copper sputtering target 9, deionized water and an organic solvent are injected into the cleaning tank 1, and the ultrasonic generator and transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target 9 by ultrasonic cleaning;

[0056] Step 2: After the ultrasonic generator and transducer have been working for N minutes, N>0, the left cylinder 61 and the right cylinder 71 are started simultaneously. The left cylinder 61 and the right cylinder 71 extend the cylinder rods at different speeds. The left cylinder 61 causes the left horizontal movement drive block 63 to move horizontally through the electromagnet and act on the left transmission ramp 34. The left second vertical moving member 32 moves upward and eventually supports the high-purity copper sputtering target 9 that moves downward. The right cylinder 71 causes the right horizontal movement drive block 73 to move horizontally through the electromagnet and act on the right transmission ramp 54. The right first vertical moving member 52 moves upward and eventually supports the high-purity copper sputtering target 9 that moves downward. The right first vertical moving member 52 and the left second vertical moving member 32 move at different distances, causing the high-purity copper sputtering target 9 to tilt at a certain angle.

[0057] Step 3. When the left second vertical moving member 32 and the right first vertical moving member 52 fully support the tilted high-purity copper sputtering target 9, the left first vertical moving member 22 and the right second vertical moving member 42 are separated from the high-purity copper sputtering target 9, and the contact parts of the three can be exposed and cleaned by deionized water and organic solvents; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target 9 can enhance the cleaning effect.

[0058] The present invention is described above by way of example in conjunction with the accompanying drawings. It is obvious that the implementation of the present invention is not limited to the above-mentioned method. As long as various improvements are made using the method concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the scope of protection of the present invention.

Claims

1. A cleaning device for a high-purity copper sputtering target, wherein a high-purity copper sputtering target (9) is placed in a cleaning tank (1), a transducer (8) is provided at the bottom outside the cleaning tank (1), the transducer (8) is connected to an ultrasonic generator, and ultrasonic cleaning is performed using deionized water and an organic solvent to remove particles and organic matter on the surface of the high-purity copper sputtering target (9), characterized in that: The high-purity copper sputtering target (9) is placed on a movable support structure. The movable support structure can not only change the contact position with the high-purity copper sputtering target (9) to avoid the existence of a cleaning blind area, but also enables the high-purity copper sputtering target (9) to move in the cleaning tank (1) to improve the cleaning effect.

2. The cleaning device for high-purity copper sputtering target according to claim 1, characterized in that: The movable support structure comprises a left movable support mechanism, which is composed of a left transmission gear (20), a left first vertical moving member (22) and a left second vertical moving member (32); a left first rack (23) is provided on one side of the left first vertical moving member (22); a left second rack (33) is provided on one side of the left second vertical moving member (32); the left transmission gear (20) is clamped between the left first rack (23) and the left second rack (33); the left first vertical moving member (22) and the left second vertical moving member (32) are ensured by a first limiting mechanism to only move in a vertical direction and always keep in mesh with the left transmission gear (20); When the moving left first vertical moving member (22) and left second vertical moving member (32) alternately support the high-purity copper sputtering target (9), the supporting parts of the left first vertical moving member (22) and left second vertical moving member (32) and the high-purity copper sputtering target (9) are exposed, so that dirt on the two supporting parts can be cleaned; When the movable left first vertical moving member (22) and the movable left second vertical moving member (32) alternately support the high-purity copper sputtering target (9), the high-purity copper sputtering target (9) reciprocates in the vertical direction, thereby facilitating uniform cleaning, enhancing cavitation effects, reducing local overheating, and improving cleaning efficiency.

3. The cleaning device for high-purity copper sputtering target according to claim 2, characterized in that: The mobile support structure includes a right mobile support mechanism, The right moving support mechanism is composed of a right transmission gear (40), a right first vertical moving member (52) and a right second vertical moving member (42); a right first rack (53) is provided on one side of the right first vertical moving member (52); a right second rack (43) is provided on one side of the right second vertical moving member (42); the right transmission gear (40) is clamped between the right first rack (53) and the right second rack (43); the right first vertical moving member (52) and the right second vertical moving member (42) are ensured by a second limiting mechanism to only move in a vertical direction and always remain in meshing with the right transmission gear (40); When the moving right first vertical moving member (52) and the right second vertical moving member (42) alternately support the high-purity copper sputtering target (9), the supporting parts of the right first vertical moving member (52) and the right second vertical moving member (42) and the high-purity copper sputtering target (9) are exposed, so that dirt on the two supporting parts can be cleaned; When the movable right first vertical moving member (52) and the movable right second vertical moving member (42) alternately support the high-purity copper sputtering target (9), the high-purity copper sputtering target (9) reciprocates in the vertical direction, thereby facilitating uniform cleaning, enhancing cavitation effects, reducing local overheating, and improving cleaning efficiency.

4. The cleaning device for high-purity copper sputtering target according to claim 3, characterized in that: The total weight of the left second vertical moving member (32) and the right first vertical moving member (52) is greater than the weight of the high-purity copper sputtering target (9), and when the left first vertical moving member (22) and the right second vertical moving member (42) support the high-purity copper sputtering target (9), the left second vertical moving member (32) and the right first vertical moving member (52) move downward, and the left first vertical moving member (22) and the right second vertical moving member (42) move upward.

5. The cleaning device for high-purity copper sputtering target according to claim 4, characterized in that: The lower end of the left second vertical moving member (32) has a left transmission inclined surface (34), and the lower end of the right first vertical moving member (52) has a right transmission inclined surface (54); The left driving mechanism horizontally acts on the left transmission inclined plane (34) to move the left second vertical moving member (32) upward; the left driving mechanism horizontally leaves the left transmission inclined plane (34), and the left second vertical moving member (32) moves downward under the action of its own gravity; The right driving mechanism horizontally acts on the right transmission inclined surface (54) to move the right first vertical moving member (52) upward; The right driving mechanism horizontally leaves the right transmission inclined plane (54), and the right first vertical moving member (52) moves downward under the action of its own gravity.

6. The cleaning device for high-purity copper sputtering target according to claim 5, characterized in that: The left driving mechanism is located outside the cleaning tank (1), and includes a left cylinder (61). The cylinder rod of the left cylinder (61) is connected to a left electromagnet (62). A left horizontal moving driving block (63) is provided at the bottom of the cleaning tank (1). A left magnetic body (64) is provided in the left horizontal moving driving block (63). The left electromagnet (62) can sense and absorb the left magnetic body (64). The cylinder rod of the left cylinder (61) is extended and retracted to cause the left electromagnet (62) to move horizontally. The left electromagnet (62) causes the left magnetic body (64) and the left horizontal moving driving block (63) to move horizontally through magnetic induction. The right driving mechanism is located outside the cleaning tank (1). The right driving mechanism comprises a right cylinder (71). The cylinder rod of the right cylinder (71) is connected to a right electromagnet (72). A right horizontal moving driving block (73) is provided at the bottom of the cleaning tank (1). A right magnetic body (74) is provided in the right horizontal moving driving block (73). The right electromagnet (72) can sense and absorb the right magnetic body (74). The cylinder rod of the right cylinder (71) is extended and retracted to make the right electromagnet (72) move horizontally. The right electromagnet (72) causes the right magnetic body (74) and the right horizontal moving driving block (73) to move horizontally through magnetic induction.

7. The cleaning device for high-purity copper sputtering target according to claim 6, characterized in that: A first Teflon support block (21) is provided on the top of the left first vertical moving member (22), a second Teflon support block (31) is provided on the top of the left second vertical moving member (32), a third Teflon support block (51) is provided on the top of the right first vertical moving member (52), and a fourth Teflon support block (41) is provided on the top of the right second vertical moving member (42).

8. The cleaning device for high-purity copper sputtering target according to claim 7, characterized in that: The cylinder rod of the left driving mechanism and the cylinder rod of the right driving mechanism move at the same speed, so that the high-purity copper sputtering target (9) maintains a horizontal state and moves vertically back and forth. Alternatively, the cylinder rod of the left drive mechanism and the cylinder rod of the right drive mechanism move at different speeds, so that the high-purity copper sputtering target (9) moves vertically back and forth in an inclined state.

9. The cleaning device for high-purity copper sputtering target according to claim 8, characterized in that: The transducer (8) is arranged at the outer bottom of the cleaning tank (1), and an electromagnetic shielding device (81) is provided outside the transducer (8) to reduce interference of the electromagnet thereon. The material of the cleaning tank (1) is 304 stainless steel.

10. A method for cleaning a high-purity copper sputtering target according to claim 8 or 9, comprising the following steps: Step 1: When the left first vertical moving member (22) and the right second vertical moving member (42) support the high-purity copper sputtering target (9), deionized water and an organic solvent are injected into the cleaning tank (1), and an ultrasonic generator and a transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target (9) through ultrasonic cleaning; Step 2: After the ultrasonic generator and the transducer have been working for N minutes, N>0, the left cylinder (61) and the right cylinder (71) are started simultaneously, the left cylinder (61) and the right cylinder (71) extend the cylinder rods at the same speed, the left cylinder (61) causes the left horizontal moving drive block (63) to move horizontally through the electromagnet and act on the left transmission inclined plane (34), the left second vertical moving member (32) moves upward and eventually supports the high-purity copper sputtering target (9) moving downward, the right cylinder (71) causes the right horizontal moving drive block (73) to move horizontally through the electromagnet and act on the right transmission inclined plane (54), the right first vertical moving member (52) moves upward and eventually supports the high-purity copper sputtering target (9) moving downward; the right first vertical moving member (52) and the left second vertical moving member (32) jointly support the high-purity copper sputtering target (9) in a horizontal state; Step 3: When the left second vertical moving member (32) and the right first vertical moving member (52) fully support the high-purity copper sputtering target (9), the left first vertical moving member (22) and the right second vertical moving member (42) are separated from the high-purity copper sputtering target (9), and the contact parts of the three can be exposed and cleaned by deionized water and organic solvent; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target (9) can enhance the cleaning effect; Step 4: After the ultrasonic generator and transducer work for M minutes, M>0, the left cylinder (61) and the right cylinder (71) retract the cylinder rods at the same speed, the left cylinder (61) causes the left horizontal moving drive block (63) to leave the left transmission inclined plane (34) through the electromagnet, and the right cylinder (71) causes the right horizontal moving drive block (73) to leave the right transmission inclined plane (54) through the electromagnet, and the left second vertical moving member (32) and the right first vertical moving member (52) are reset under the action of their own gravity, and at the same time, the left first vertical moving member (22) and the right second vertical moving member (42) move upward to re-support the high-purity copper sputtering target (9); or, Step 1: When the left first vertical moving member (22) and the right second vertical moving member (42) support the high-purity copper sputtering target (9), deionized water and an organic solvent are injected into the cleaning tank (1), and an ultrasonic generator and a transducer are started to remove particles and organic matter on the surface of the high-purity copper sputtering target (9) through ultrasonic cleaning; Step 2: After the ultrasonic generator and the transducer have been working for N minutes, N>0, the left cylinder (61) and the right cylinder (71) are started simultaneously, and the left cylinder (61) and the right cylinder (71) extend the cylinder rods at different speeds. The left cylinder (61) causes the left horizontal moving drive block (63) to move horizontally through the electromagnet and act on the left transmission inclined plane (34), and the left second vertical moving member (32) moves upward and eventually supports the high-purity copper sputtering target (9) moving downward. The right cylinder (71) causes the right horizontal moving drive block (73) to move horizontally through the electromagnet and act on the right transmission inclined plane (54), and the right first vertical moving member (52) moves upward and eventually supports the high-purity copper sputtering target (9) moving downward. The right first vertical moving member (52) and the left second vertical moving member (32) move at different distances, so that the high-purity copper sputtering target (9) tilts at a certain angle. Step 3: When the left second vertical moving member (32) and the right first vertical moving member (52) fully support the tilted high-purity copper sputtering target (9), the left first vertical moving member (22) and the right second vertical moving member (42) are separated from the high-purity copper sputtering target (9), and the contact parts of the three can be exposed and cleaned by deionized water and organic solvent; at the same time, the vertical reciprocating motion of the high-purity copper sputtering target (9) can enhance the cleaning effect.

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