High-temperature sintering device for silicon carbide growth

Abstract

The utility model discloses a high-temperature sintering device for silicon carbide growth, which relates to the technical field of silicon carbide sintering, and comprises a furnace body, the top surface of the furnace body is provided with an air exhaust hole, the top of the air exhaust hole is provided with a filtering mechanism, the filtering mechanism is connected with a vacuum pump, and the filtering mechanism comprises a first pipe body; one end of the first pipe body is fixed in the air suction hole, a second pipe body is fixedly mounted at one end of the first pipe body, a filter screen is arranged in the second pipe body, a cleaning pipeline is arranged above the filter screen, and the top of the cleaning pipeline is connected with a water pump. The filtering mechanism is composed of the first pipe body, the second pipe body, the filter screen, the cleaning pipeline and the water pump, when a large number of impurities are attached to the filter screen after the filter screen is used for a long time, the water pump works to enable the cleaning pipeline to spray water, the impurities attached to the filter screen can be removed, the filtering effect and normal work of the filter screen are guaranteed, and the practicability of the device is improved; and the whole working efficiency of the equipment is prevented from being influenced by dismounting the filter screen for cleaning.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide sintering, in particular to a high-temperature sintering device for growing silicon carbide. Background Art

[0002] Silicon carbide ceramics have many excellent properties such as high hardness, high decomposition temperature, high thermal conductivity, low expansion, corrosion resistance, etc., and have been widely used in the fields of machinery, petroleum, and automobile industries. With the rapid development of modern national defense, space technology, and energy technology, silicon carbide is increasingly used as a high-tech ceramic, especially a high-performance structural ceramic, such as a main candidate material for high-temperature thermal engine materials such as combustion chambers of high-temperature gas turbines, turbine blades, turbocharger rotors, and high-temperature nozzles. At the same time, the requirements for the complexity, toughness, strength, and reliability of the geometric shape of silicon carbide ceramics are getting higher and higher. The production process of silicon carbide slip casting includes pretreatment of silicon carbide powder, preparation of submicron sintering aid powder, ball milling, slip casting, drying, and sintering. When the slip-cast ceramic ligand is sintered, it is necessary to put the embryo into a high-temperature sintering furnace, and continue to heat the high-temperature sintering furnace for a period of time until the temperature in the high-temperature sintering furnace reaches a sintering temperature below the melting point of the embryo, so that the embryo is sintered and solidified into a body, and then undergoes post-processing steps.

[0003] However, the vacuum system of the existing vacuum sintering furnace usually uses a vacuum pump to directly extract air, and there is no filtering device before the air enters the vacuum pump, which easily brings impurities such as flying dust into the vacuum pump and damages the vacuum pump.

[0004] A silicon carbide slip casting sintering device is proposed in the Chinese patent publication number CN114279211B. The device is provided with a filtering device to prevent impurities such as flying dust from being brought into the vacuum pump and damaging the vacuum pump. However, the filtering device needs to be disassembled and cleaned after long-term use. The disassembly and cleaning process affects the work efficiency. Therefore, a high-temperature sintering device for silicon carbide growth is proposed herein. Utility Model Content

[0005] Technical issues solved

[0006] The purpose of the utility model is to make up for the deficiencies of the prior art and provide a high-temperature sintering device for growing silicon carbide.

[0007] Technical Solution

[0008] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a high-temperature sintering device for silicon carbide growth, comprising a furnace body, a top surface of the furnace body is provided with an air extraction hole, a filter mechanism is arranged on the top of the air extraction hole, and the filter mechanism is connected to a vacuum pump, characterized in that: the filter mechanism comprises a first tube body, one end of the first tube body is fixed in the air extraction hole, a second tube body is fixedly installed on one end of the first tube body, a filter screen is arranged in the second tube body, a cleaning pipe is arranged above the filter screen, a water pump is connected to the top of the cleaning pipe, a water pipe is connected to the input end of the water pump, and one end of the second tube body is fixedly connected to the input end of the vacuum pump, and the filter mechanism consists of the first tube body, the second tube body, the filter screen, the cleaning pipe and the water pump. When the filter screen is used for a long time and a large amount of impurities are attached, the water pump works to spray water on the cleaning pipe, which can remove the impurities attached to the filter screen, ensure the filtering effect and normal operation of the filter screen, improve the practicality of the device, and avoid disassembling the filter screen for cleaning to affect the overall working efficiency of the equipment.

[0009] Preferably, a baffle is provided inside the first tube body, and a water storage tank is provided at the bottom of the first tube body. The baffle is provided inside the first tube body, which can effectively prevent water from flowing back into the furnace body when spraying water to clean the pipeline, thereby further improving the practicality of the device.

[0010] Preferably, a drain valve is provided on one side of the water tank.

[0011] Preferably, the first tube body and the second tube body are fixedly connected together via a flange structure.

[0012] Preferably, a plurality of cleaning water outlets are provided on the cleaning pipe.

[0013] Preferably, the input end of the water pump is connected to a water source through a water pipe.

[0014] Preferably, the filter screen has multiple layers, the mesh sizes of the multiple layers are different, and the mesh sizes of the filter screen decrease from top to bottom.

[0015] Beneficial effects:

[0016] Compared with the prior art, the high temperature sintering device for silicon carbide growth has the following beneficial effects:

[0017] 1. The filtering mechanism of the utility model is composed of a first tube body, a second tube body, a filter screen, a cleaning pipe and a water pump. When the filter screen is used for a long time and a large amount of impurities are attached to it, the water pump works to spray water through the cleaning pipe, which can remove the impurities attached to the filter screen, thereby ensuring the filtering effect and normal operation of the filter screen, improving the practicability of the device, and avoiding disassembling the filter screen for cleaning to affect the overall working efficiency of the equipment.

[0018] Second, the utility model can effectively prevent the phenomenon of water backflowing into the furnace body when spraying water to clean the pipeline by arranging a baffle inside the first tube body, thereby further improving the practicality of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a structural schematic diagram of the utility model;

[0020] Figure 2 This is a schematic diagram of the structure of the filter mechanism of the utility model;

[0021] Figure 3 It is a structural schematic diagram of the first tube body of the utility model.

[0022] In the figure:

[0023] 1. Furnace body; 2. Exhaust hole; 3. Filter mechanism; 4. Vacuum pump; 301. First tube body; 302. Second tube body; 303. Filter; 304. Cleaning pipe; 305. Water pump; 3011. Baffle; 3012. Water storage tank; 5. Drain valve; 3041. Cleaning outlet. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0025] See also Figure 1 to Figure 3As shown, the utility model provides a technical solution: a high-temperature sintering device for growing silicon carbide, comprising a furnace body 1, a heating mechanism is arranged inside the furnace body, the heating mechanism is a prior art, and the present application will not elaborate on it here89k, an air extraction hole 2 is opened on the top surface of the furnace body 1, a filtering mechanism 3 is arranged on the top of the air extraction hole 2, the filtering mechanism 3 is connected to a vacuum pump 4, the filtering mechanism 3 comprises a first tube body 301, one end of the first tube body 301 is fixed in the air extraction hole 2, a second tube body 302 is fixedly installed at one end of the first tube body 301, a filter screen 303 is arranged in the second tube body 302, a cleaning pipe 304 is arranged above the filter screen 303, and a cleaning pipe 304 is arranged above the filter screen 303. A water pump 305 is connected to the top of the washing pipe 304, and a water pipe 306 is connected to the input end of the water pump 305. One end of the second tube body 302 is fixedly connected to the input end of the vacuum pump 4. The filtering mechanism 3 is composed of a first tube body 301, a second tube body 302, a filter screen 303, a washing pipe 304 and a water pump 305. When in use, when the filter screen 303 is used for a long time and a large amount of impurities are attached, the water pump 305 works to make the washing pipe 304 spray water, which can remove the impurities attached to the filter screen 303, thereby ensuring the filtering effect and normal operation of the filter screen 303, improving the practicability of the device, and avoiding disassembling the filter screen for cleaning to affect the overall working efficiency of the equipment.

[0026] Please pay attention to Figure 2 and Figure 3 A baffle 3011 is arranged inside the first tube body 301, a water storage tank 3012 is arranged at the bottom of the first tube body 301, and a drain valve 5 is arranged on one side of the water storage tank 3012. By arranging the baffle 3011 inside the first tube body 301, the phenomenon of water backflowing into the furnace body 1 when spraying water from the cleaning pipe 304 can be effectively avoided, thereby further improving the practicality of the device.

[0027] The first tube body 301 and the second tube body 302 in the present application are fixedly connected together by a flange structure, a plurality of cleaning water outlets 3041 are arranged on the cleaning pipe 304, an input end of the water pump 305 is connected to a water source via a water pipe 306, and the filter screen 303 has multiple layers, and the mesh numbers of the multiple layers of the filter screen 303 are different, and the mesh numbers of the filter screen 303 decrease successively from top to bottom.

[0028] Working principle: The filtering mechanism 3 is composed of a first tube body 301, a second tube body 302, a filter screen 303, a cleaning pipe 304 and a water pump 305. When the filter screen 303 is used for a long time and a large amount of impurities are attached, the water pump 305 works to make the cleaning pipe 304 spray water, which can remove the impurities attached to the filter screen 303, ensure the filtering effect and normal operation of the filter screen 303, improve the practicality of the device, avoid disassembling the filter screen for cleaning and affecting the overall working efficiency of the equipment, and by arranging a baffle 3011 inside the first tube body 301, it can effectively avoid the phenomenon that water flows back into the furnace body 1 when the cleaning pipe 304 sprays water, further improving the practicality of the device.

[0029] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-temperature sintering device for growing silicon carbide, comprising a furnace body (1), a top surface of the furnace body (1) is provided with an exhaust hole (2), a filter mechanism (3) is arranged on the top of the exhaust hole (2), and the filter mechanism (3) is connected to a vacuum pump (4), characterized in that: The filtering mechanism (3) comprises a first tube body (301), one end of the first tube body (301) is fixed in the air extraction hole (2), a second tube body (302) is fixedly mounted on one end of the first tube body (301), a filter screen (303) is arranged in the second tube body (302), a cleaning pipe (304) is arranged above the filter screen (303), a water pump (305) is connected to the top of the cleaning pipe (304), an input end of the water pump (305) is connected to a water pipe (306), and one end of the second tube body (302) is fixedly connected to the input end of the vacuum pump (4).

2. A high temperature sintering device for growing silicon carbide according to claim 1, characterized in that: A baffle (3011) is arranged inside the first tube body (301), and a water storage tank (3012) is arranged at the bottom of the first tube body (301).

3. A high temperature sintering device for growing silicon carbide according to claim 2, characterized in that: A drainage valve (5) is provided on one side of the water storage tank (3012).

4. A high temperature sintering device for growing silicon carbide according to claim 1, characterized in that: The first tube body (301) and the second tube body (302) are fixedly connected together via a flange structure.

5. A high temperature sintering device for growing silicon carbide according to claim 1, characterized in that: The cleaning pipe (304) is provided with a plurality of cleaning water outlets (3041).

6. A high temperature sintering device for growing silicon carbide according to claim 1, characterized in that: The input end of the water pump (305) is connected to a water source via a water pipe (306).

7. A high temperature sintering device for growing silicon carbide according to claim 1, characterized in that: The filter screen (303) has multiple layers, and the mesh sizes of the multiple layers of filter screens (303) are different, and the mesh sizes of the filter screens (303) decrease from top to bottom.

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