Radio frequency power amplifier, radio frequency front-end module and electronic equipment

Abstract

According to the radio frequency power amplifier, the radio frequency front-end module and the electronic equipment, the first Balun of the radio frequency power amplifier is arranged in the same wiring layer, the primary lines or the secondary lines are split for coupling, the coupling degree is increased by arranging the multiple primary lines or the multiple secondary lines, and the coupling efficiency is improved. The arrangement of the Balun can be realized on the basis of a small number of layers of substrates. Moreover, the primary parts and the secondary parts are grouped, and each primary part is independently grounded, so that additional wiring connection can be reduced, the realization of the Balun in an independent wiring layer is also ensured, and the power supply end is synchronously configured to be respectively connected to the first differential feed end and the second differential feed end, so that the reliability of the Balun is improved. According to the radio frequency power amplifier, the first Balun is arranged in the single wiring layer, so that better feed support of the radio frequency power amplifier after each primary part is independently grounded is ensured, and the performance realization of the radio frequency power amplifier is further ensured on the premise of ensuring that the first Balun can be better realized in the single wiring layer through the linkage matching.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier, a radio frequency front-end module and an electronic device. Background Art

[0002] The advancement of communication technology has brought huge development opportunities to the electronic equipment industry. Especially in the field of mobile devices, users pay more and more attention to the portability and ease of operation of the equipment, which has prompted electronic equipment to continue to develop in the direction of high performance. Taking the RF front-end module as an example, with the increasing popularity of 5G technology, this requires communication equipment to be compatible with more frequency bands. At the same time, the increase in frequency also makes the RF front-end module have higher requirements for performance indicators. High performance indicators must be achieved under the premise of meeting high integration, which puts higher requirements on the design of the RF front-end. Utility Model Content

[0003] The present application provides a radio frequency power amplifier, a radio frequency front-end module and an electronic device, which can better ensure the realization of the performance of the radio frequency power amplifier and the radio frequency front-end module under the premise of high integration.

[0004] In a first aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0005] substrate;

[0006] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0007] A first balun, disposed on the same wiring layer of the substrate, comprising a primary part and a secondary part;

[0008] The primary section includes a first set of primary wires and a second set of primary wires;

[0009] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0010] A power supply terminal, arranged on the substrate, the first differential feeding terminal being connected to the power supply terminal, and the second differential feeding terminal being connected to the power supply terminal;

[0011] The first group of primary wires includes at least two primary wires and the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires and the second group of secondary wires includes at least two secondary wires;

[0012] One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

[0013] In a second aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0014] substrate;

[0015] A first chip, arranged on the substrate, comprising a first differential transistor, a second differential transistor, a first differential output terminal, a second differential output terminal, a first differential feeding terminal and a second differential feeding terminal, wherein the first output terminal of the first differential transistor is connected to the first differential feeding terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, the second output terminal of the second differential transistor is connected to the second differential feeding terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor;

[0016] A first balun, disposed on the substrate, comprising a primary part and a secondary part;

[0017] The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the second group of primary wires is configured to be connected to the second differential output terminal, and the other end is configured to be grounded;

[0018] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines and extends in the same direction, and the second group of secondary lines is coupled with the second group of primary lines and extends in the same direction;

[0019] A power supply terminal is arranged on the substrate, the first differential feeding terminal is connected to the power supply terminal, and the second differential feeding terminal is connected to the power supply terminal.

[0020] In a third aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0021] substrate;

[0022] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0023] The first balun, consisting of the primary and secondary sections;

[0024] The first end of the primary part is connected to the first differential output end through a first group of bonding wires, the second end of the primary part is connected to the second differential output end through a second group of bonding wires, the first differential feed end is connected to the power supply end through a third group of bonding wires, and the second differential feed end is connected to the power supply end through a fourth group of bonding wires;

[0025] The fourth group of bonding wires is disposed between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is disposed between the second group of bonding wires and the fourth group of bonding wires.

[0026] Further, the second differential feeding terminal is arranged between the first differential output terminal and the first differential feeding terminal, and the first differential feeding terminal is arranged between the second differential output terminal and the second differential feeding terminal.

[0027] Further, the first balun is arranged on the substrate, or the first balun is arranged in the second chip.

[0028] In a fourth aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0029] A substrate is provided with a first differential power terminal and a second differential power terminal;

[0030] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0031] A first balun, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end, and a second end of the primary part is connected to the second differential output end;

[0032] a first inductor, one end of the first inductor being connected to the first differential power supply end, the other end of the first inductor being connected to the first differential feeding end, the first inductor comprising a first sub-trace, the primary part comprising a first primary trace, the first sub-trace and the first primary trace being arranged on the same wiring layer of the substrate and being arranged adjacent to each other, and a radio frequency signal transmission direction of the first sub-trace being opposite to a radio frequency signal transmission direction of the first primary trace;

[0033] A second inductor, one end of the second inductor is connected to the second differential power supply end, the other end of the second inductor is connected to the second differential feeding end, the second inductor includes a second sub-route, the primary part includes a second primary route, the second sub-route and the second primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the second sub-route is opposite to the RF signal transmission direction of the second primary route.

[0034] Furthermore, an angle formed by a RF signal transmission direction of the first sub-route and a RF signal transmission direction of the first primary route is greater than 160 degrees, and an angle formed by a RF signal transmission direction of the second sub-route and a RF signal transmission direction of the second primary route is greater than 160 degrees.

[0035] In a fifth aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0036] A substrate is provided with a first differential power terminal and a second differential power terminal;

[0037] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0038] A first balun, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end through a first connection path, and a second end of the primary part is connected to the second differential output end through a second connection path;

[0039] A power supply terminal, arranged on the substrate, the first differential feed terminal being connected to the power supply terminal through a third connection path, and the second differential feed terminal being connected to the power supply terminal through a fourth connection path;

[0040] A transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the second connection path, or a transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines;

[0041] A transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first connection path, or a transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first group of primary lines or the second group of primary lines.

[0042] In a sixth aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0043] substrate;

[0044] A first chip, disposed on the substrate, comprising a first output terminal;

[0045] A first transformer, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first output end, and a second end of the primary part is configured to be grounded or connected to a power supply end;

[0046] A first inductor is connected in a feeding path of the RF power amplifier, wherein the first inductor includes a first sub-route, the primary part includes a first primary route, the first sub-route and the first primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the first sub-route is opposite to the RF signal transmission direction of the first primary route.

[0047] Furthermore, the substrate also includes a power supply terminal;

[0048] The first chip further includes a first feeding terminal, one end of the first inductor is connected to the power supply terminal, and the other end of the first inductor is connected to the first feeding terminal.

[0049] Furthermore, an angle formed by a radio frequency signal transmission direction of the first sub-route and a radio frequency signal transmission direction of the first primary route is greater than 135 degrees.

[0050] Further, the primary part and the secondary part extend in the same direction.

[0051] Further, the first chip includes a first amplifying transistor; a third output terminal of the first amplifying transistor is connected to a first feeding terminal of the first chip, and a third output terminal of the first amplifying transistor is connected to the first output terminal.

[0052] In a seventh aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0053] substrate;

[0054] A first chip, disposed on the substrate, comprising a first differential output terminal and a second differential output terminal;

[0055] The first balun, consisting of the primary and secondary sections;

[0056] The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, the other end is configured to be grounded, and a virtual line formed by one end of the first group of primary wires and the other end of the first group of primary wires extends along a first direction; one end of the second group of primary wires is configured to be connected to the second differential output terminal, the other end is configured to be grounded, and a virtual line formed by one end of the second group of primary wires and the other end of the second group of primary wires extends along a second direction;

[0057] The secondary part includes a first group of secondary lines and a second group of secondary lines, the first group of secondary lines and the second group of secondary lines are connected in series, the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0058] A virtual line formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along a first direction, and a virtual line formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along a second direction.

[0059] In an eighth aspect of the present application, a radio frequency front-end module is provided, comprising the above-mentioned radio frequency power amplifier.

[0060] In a ninth aspect of the present application, an electronic device is provided, comprising the above-mentioned RF front-end module.

[0061] In the RF power amplifier, RF front-end module and electronic device provided in the embodiments of the present application, by setting the first balun of the RF power amplifier in the same wiring layer, and setting the splitting of the primary line or the secondary line for coupling, and by setting multiple primary lines or secondary lines to increase the coupling degree, the setting of the balun can be realized on a substrate with fewer layers. In addition, the primary part and the secondary part are grouped and each primary part is grounded separately, which can reduce unnecessary additional wiring connections and ensure the realization of the balun in a separate wiring layer. Synchronously, the power supply end is configured to be connected to the first differential feeding end and the second differential feeding end respectively to ensure better feeding support for the RF power amplifier after each primary part is grounded separately. Through the above-mentioned linkage, it is ensured that the first balun can be well realized in a single wiring layer, and the performance of the RF power amplifier is further guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 is a schematic diagram of a radio frequency power amplifier provided in an embodiment of the present application;

[0063] Figure 2 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0064] Figure 3 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0065] Figure 4 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0066] Figure 5 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0067] Figure 6 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0068] Figure 7 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0069] Figure 8 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0070] Fig. 9 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0071] Fig.10 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0072] Fig.11 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0073] Fig.12 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0074] Fig.13 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0075] Fig.14 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0076] Fig.15 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0077] Fig.16 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0078] Fig.17 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0079] Fig.18 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0080] Fig.19 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0081] Fig. 20 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0082] Fig.21 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0083] Fig. 22 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0084] Fig.23is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0085] Fig.24 is another schematic diagram of a radio frequency power amplifier provided in an embodiment of the present application. DETAILED DESCRIPTION

[0086] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0087] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0088] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, connected to, connected to, or coupled to other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0089] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0090] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0091] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0092] The RF power amplifier and RF front end involved in this application can be applied to various communication terminals, for example, they can be applied to mobile terminals, IOT devices, wearable devices, tablet computers, vehicle terminals, etc. The RF power amplifier and RF front end involved in this application can be applied to different communication technologies, for example, they can be applied to 2G, 3G, 4G, 5G, WiFi and other communication technologies.

[0093] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0094] substrate;

[0095] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0096] A first balun, disposed on the same wiring layer of the substrate, comprising a primary part and a secondary part;

[0097] The primary section includes a first set of primary wires and a second set of primary wires;

[0098] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line is connected in series between the first group of secondary lines and the second group of secondary lines; the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0099] A power supply terminal, arranged on the substrate, the first differential feeding terminal being connected to the power supply terminal, and the second differential feeding terminal being connected to the power supply terminal;

[0100] The first group of primary wires includes at least two primary wires and the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires and the second group of secondary wires includes at least two secondary wires;

[0101] One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

[0102] by Figure 1 For example, the substrate 10 is provided with a first chip 20 and a first balun 30. The first chip 20 is arranged on the substrate, including a first differential output terminal 21, a second differential output terminal 22, a first differential feed terminal and a second differential feed terminal. Optionally, the first chip can be arranged on the substrate 10 in a flip-down manner, or the first chip is arranged on the substrate 10 by wire bonding. Among them, the first differential output terminal 21 and the second differential output terminal 22 are respectively two output terminals of the differential RF signal. Exemplarily, the front-stage RF signal is converted to form two differential RF signals, and the two differential RF signals are respectively output through the first differential output terminal 21 and the second differential output terminal 22 after signal amplification by one or more stages of amplifying transistors. The first differential feed terminal and the second differential feed terminal are respectively configured to receive corresponding power supply signals to realize power supply to the amplifying transistor. The first differential feed terminal is configured to receive the corresponding power supply signal to power the corresponding amplifying transistor in the first differential path. The second differential feed terminal is configured to receive a corresponding power supply signal to power the corresponding amplifying transistor in the second differential path. It can be understood that the power supply signals received by the first differential feed terminal and the second differential feed terminal can be the same or different. That is, the first differential feed terminal and the second differential feed terminal can be connected to the same power supply terminal or to different power supply terminals.

[0103] In the present embodiment, the first balun 30 is disposed on the same wiring layer of the substrate 10. The first balun 30 includes a primary part and a secondary part. The primary part includes a first group of primary lines 311 and a second group of primary lines 312, wherein the first group of primary lines includes at least one primary line, one end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded. It can be understood that if the first group of primary lines includes more than two primary lines, one end of each primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded. Exemplarily, Figure 1 In a corresponding embodiment, the first set of primary lines includes one primary line, Figure 2 In the corresponding embodiment, the first group of primary wires includes two primary wires. It can be understood that the number of primary wires in the first group of primary wires can be greater, which is not limited here.

[0104] In at least one embodiment, the connection between one end of the primary wire in the first group of primary wires and the first differential output terminal can be in a variety of ways. Optionally, one end of the primary wire in the first group of primary wires is connected to the first differential output terminal through a bonding wire (wire bonding), or the first differential output terminal is connected to one end of the primary wire in the first group of primary wires through a conductive bump. Further, the first differential output terminal can be first connected to a third point, and the third point is then connected to one end of the primary wire in the first group of primary wires. For example, the first differential output terminal is connected to a node on the substrate through a conductive bump, and the node is then connected to one end of the primary wire in the first group of primary wires (the connection can be achieved through a bonding wire or a wiring pattern on the substrate). Alternatively, the first differential output terminal is connected to a node on the substrate through a bonding wire, and the node is then connected to one end of the primary wire in the first group of primary wires (the connection can be achieved through a bonding wire or a wiring pattern on the substrate). It can be understood that the primary wire in the first group of primary wires can be in the shape of a straight line, a curve, an arc line, or a fold line with any bending shape.

[0105] The second group of primary lines includes at least one primary line, one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded. It can be understood that if the second group of primary lines includes more than two primary lines, one end of each primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded. Exemplarily, Figure 1 In a corresponding embodiment, the second set of primary lines includes one primary line, Figure 2In the corresponding embodiment, the second group of primary wires includes two primary wires. It is understandable that the number of primary wires in the second group of primary wires can be greater, and this is not limited here. It is understandable that the primary wires in the second group of primary wires 312 can be in the shape of straight lines, curves, arc lines, or folded lines with any bending shapes.

[0106] In at least one embodiment, the connection method between one end of the primary wire in the second group of primary wires and the second differential output terminal can be multiple. Optionally, one end of the primary wire in the second group of primary wires is connected to the second differential output terminal through a bonding wire, or the second differential output terminal is connected to one end of the primary wire in the second group of primary wires through a conductive bump. Further, the second differential output terminal can be first connected to a third point, and the third point is then connected to one end of the primary wire in the second group of primary wires. For example, the second differential output terminal is connected to a node on the substrate through a conductive bump, and the node is then connected to one end of the primary wire in the second group of primary wires (the connection can be achieved through a bonding wire or a wiring pattern on the substrate). Alternatively, the second differential output terminal is connected to a node on the substrate through a bonding wire, and the node is then connected to one end of the primary wire in the second group of primary wires (the connection can be achieved through a bonding wire or a wiring pattern on the substrate).

[0107] The secondary part includes a first group of secondary wires 321, a second group of secondary wires 322 and a secondary connecting wire 323, wherein the secondary connecting wire 323 is connected in series between the first group of secondary wires 321 and the second group of secondary wires 322; the first group of secondary wires 321 is coupled with the first group of primary wires 311, and the second group of secondary wires 322 is coupled with the second group of primary wires 312. It can be understood that the secondary wires in the first group of secondary wires 321 can be in the shape of a straight line, a curve, an arc line or a folded line with any bending shape. It can be understood that the secondary wires in the second group of secondary wires 322 can be in the shape of a straight line, a curve, an arc line or a folded line with any bending shape.

[0108] In at least one embodiment, the first end of the first group of secondary lines 321 is configured to be grounded, the second end of the first group of secondary lines 321 is connected to the first end of the secondary connecting line 323, the second end of the secondary connecting line 323 is connected to the first end of the second group of secondary lines 322, and the second end of the second group of secondary lines 322 is configured to be connected to the signal output end.

[0109] In at least one embodiment, the first end of the first group of secondary lines 321 is configured to be connected to the signal output end, the second end of the first group of secondary lines 321 is connected to the first end of the secondary connecting line 323, the second end of the secondary connecting line 323 is connected to the first end of the second group of secondary lines 322, and the second end of the second group of secondary lines 322 is configured to be grounded.

[0110] In at least one embodiment, the first group of secondary wires 321 and the first group of primary wires 311 extend in the same direction, and the second group of secondary wires 322 and the second group of primary wires 312 extend in the same direction. Figure 1 and Figure 2 As shown, the first group of secondary lines 321 and the first group of primary lines 311 extend in the same direction, and the second group of secondary lines 322 and the second group of primary lines 312 extend in the same direction, which can reduce the bending of the balun wiring and reduce the insertion loss of RF signal transmission.

[0111] In at least one embodiment, the first group of secondary wires 321 and the first group of primary wires 311 extend in a first direction, and the second group of secondary wires 322 and the second group of primary wires 312 extend in a second direction. Optionally, the first direction is parallel to the second direction. Optionally, the first direction is opposite to the second direction.

[0112] Optionally, the first direction intersects the second direction. In at least one embodiment, Figure 3 As shown, the angle formed by the first direction and the second direction is greater than or equal to 0 degrees and less than 60 degrees. In at least one embodiment, Figure 3 As shown, the angle formed by the first direction and the second direction is greater than 0 degree and less than 45 degrees.

[0113] In at least one embodiment, the RF power amplifier also includes a third chip, at least a portion of the third chip is located on the side of the virtual straight line facing the first chip, and the virtual straight line is a line connecting the other end of the first group of primary lines configured as grounded and the other end of the second group of primary lines configured as grounded.

[0114] like Fig.12 As shown, the third chip 70 is disposed on the substrate 10, and at least a portion of the third chip 70 is located on the side of the virtual straight line a facing the first chip. In at least one embodiment, the first direction is parallel to the second direction. In at least one embodiment, the angle formed by the first direction and the second direction is greater than or equal to 0 degrees and less than or equal to 60 degrees.

[0115] In at least one embodiment, the third chip includes a radio frequency switch circuit. The first end of the first group of secondary wires or the first end of the second group of secondary wires is connected to the radio frequency switch circuit in the third chip. The first end of the first group of secondary wires or the first end of the second group of secondary wires can be connected to the radio frequency switch circuit through a wiring pattern on a substrate, or the first end of the first group of secondary wires or the first end of the second group of secondary wires can be connected to the radio frequency switch circuit through a bonding wire.

[0116] In at least one embodiment, the third chip includes a radio frequency switch circuit. The signal output terminal is connected to the radio frequency switch circuit in the third chip. The signal output terminal can be connected to the radio frequency switch circuit through a wiring pattern on a substrate, or the signal output terminal can be connected to the radio frequency switch circuit through a bonding wire.

[0117] In this embodiment, by providing a third chip, and at least a portion of the third chip is located on the side of the virtual straight line a facing the first chip, the space on the substrate is fully utilized, and the integration of the overall power amplifier is improved. Furthermore, there is an electrical connection between the first balun and the third chip, and such a configuration also facilitates wiring and avoids loss or interference caused by additional wiring.

[0118] The first group of secondary lines 321 includes at least one secondary line. One end of the secondary line in the first group of secondary lines 321 is connected to one end of the secondary connection line 323, and the other end of the secondary line in the first group of secondary lines 321 is configured to be grounded. It can be understood that if the first group of secondary lines 321 includes more than two secondary lines, one end of each secondary line in the first group of secondary lines 321 is connected to one end of the secondary connection line 323, and the other end is configured to be grounded. Exemplarily, Figure 1 In a corresponding embodiment, the first group of secondary lines 321 includes one secondary line. Figure 2 In the corresponding embodiment, the first group of secondary lines 321 includes two secondary lines. It can be understood that the number of secondary lines in the first group of secondary lines can be more (more than three), which is not limited here.

[0119] The second group of secondary lines 322 includes at least one secondary line. One end of the secondary line in the second group of secondary lines 322 is connected to the other end of the secondary connection line 323, and the other end of the secondary line in the second group of secondary lines 322 is configured to be connected to the signal output terminal. It can be understood that if the second group of secondary lines 322 includes more than two secondary lines, one end of each secondary line in the second group of secondary lines 322 is connected to the other end of the secondary connection line 323, and the other end of the secondary line in the second group of secondary lines 322 is configured to be connected to the signal output terminal. Exemplarily, Figure 1In a corresponding embodiment, the second group of secondary lines 322 includes one secondary line. Figure 2 In the corresponding embodiment, the second group of secondary lines 322 includes two secondary lines. It can be understood that the number of secondary lines in the second group of secondary lines 322 can be greater (more than three), which is not limited here.

[0120] The RF power amplifier in this embodiment further includes a power supply terminal ( Figure 1 , Figure 2 (not shown), the first differential feed terminal is connected to the power supply terminal, and the second differential feed terminal is connected to the power supply terminal. In at least one embodiment, the first differential feed terminal and the second differential feed terminal can be connected to the same power supply terminal. In at least one embodiment, the first differential feed terminal and the second differential feed terminal are respectively connected to different power supply terminals.

[0121] In this embodiment, by setting the first balun of the RF power amplifier in the same wiring layer, and setting the first group of primary lines to include at least two primary lines, the second group of primary lines to include at least two primary lines, and / or, the first group of secondary lines to include at least two secondary lines, the second group of secondary lines to include at least two secondary lines, and by setting multiple primary lines or secondary lines to increase the coupling degree, the balun can be set up on a substrate with fewer layers. In addition, the primary part and the secondary part are grouped and each primary part is grounded separately, which can reduce unnecessary additional wiring connections and ensure the implementation of the balun in a separate wiring layer. Synchronously, the power supply end is configured to be connected to the first differential feeding end and the second differential feeding end respectively to ensure better feeding support for the RF power amplifier after each primary part is grounded separately. Through the above-mentioned linkage, it is ensured that the first balun can be well implemented in a single wiring layer, and the performance of the RF power amplifier is further guaranteed.

[0122] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0123] substrate;

[0124] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0125] The first balun, consisting of the primary and secondary sections;

[0126] The primary section includes a first set of primary wires and a second set of primary wires;

[0127] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0128] A power supply terminal is arranged on the substrate, the first differential feeding terminal is connected to the power supply terminal, and the second differential feeding terminal is connected to the power supply terminal;

[0129] The first group of primary wires includes at least two primary wires and the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires and the second group of secondary wires includes at least two secondary wires;

[0130] One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

[0131] In this embodiment, the first balun may be arranged in the first chip, or the first balun may be arranged in a chip different from the first chip, or the first balun may be arranged on the substrate. It can be understood that the specific structure of the first balun may be implemented by the structure described in any embodiment or implementation mode of the present application.

[0132] In at least one embodiment, one end of the primary wire in the first group of primary wires is connected to the first differential output terminal through a first group of bonding wires, one end of the primary wire in the second group of primary wires is connected to the second differential output terminal through a second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through a third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through a fourth group of bonding wires;

[0133] The fourth group of bonding wires is disposed between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is disposed between the second group of bonding wires and the fourth group of bonding wires.

[0134] like Figure 4 As shown, taking the example that both the first group of primary wires and the second group of primary wires include 2 primary wires, one end of the primary wire in the first group of primary wires is connected to the first differential output terminal 21 through a first group of bonding wires 41, one end of the primary wire in the second group of primary wires is connected to the second differential output terminal 22 through a second group of bonding wires 42, the first differential feed terminal 23 is connected to the power supply terminal through a third group of bonding wires 43, and the second differential feed terminal 24 is connected to the power supply terminal through a fourth group of bonding wires 44.

[0135] Among them, the number of the first group of bonding wires 41 is at least one. In at least one embodiment, the number of the first group of bonding wires 41 is at least two. In at least one embodiment, the number of the first group of bonding wires 41 is 4-8. In at least one embodiment, the first group of bonding wires can be connected to at least part of the primary wires in the first group of primary wires. For example, the first group of bonding wires is directly connected to only one primary wire in the first group of primary wires, and one end of the primary wires in the first group of primary wires is then connected to each other to achieve connection with the first differential output terminal 21. Alternatively, the first group of bonding wires is directly connected to only part of the primary wires in the first group of primary wires, and one end of the remaining / all primary wires in the first group of primary wires is then connected to each other to achieve connection with the first differential output terminal 21.

[0136] The number of the second group of bonding wires 42 is at least one. In at least one embodiment, the number of the second group of bonding wires 42 is at least two. In at least one embodiment, the number of the second group of bonding wires 42 is 4-8. In at least one embodiment, the second group of bonding wires 42 can be connected to at least some of the primary wires in the second group of primary wires. For example, the second group of bonding wires 42 is directly connected to only one primary wire in the second group of primary wires, and one end of the primary wires in the second group of primary wires is then connected to each other to achieve connection with the second differential output terminal 22. Alternatively, the second group of bonding wires 42 is directly connected to only some of the primary wires in the second group of primary wires, and one end of the remaining / all of the primary wires in the second group of primary wires is then connected to each other to achieve connection with the first differential output terminal 21.

[0137] The number of the third group of bonding wires 43 is at least one. In at least one embodiment, the number of the third group of bonding wires 43 is at least two. The first differential feed terminal is connected to the power supply terminal through the third group of bonding wires. It can be understood that the connection between the first differential feed terminal and the power supply terminal can be directly achieved through the third group of bonding wires, or can be achieved by the third group of bonding wires in combination with other connection methods. In at least one embodiment, one end of the third group of bonding wires 43 is connected to the first differential feed terminal, and the other end of the third group of bonding wires 43 is connected to the power supply terminal. In at least one embodiment, one end of the third group of bonding wires 43 is connected to the first differential feed terminal, and the other end of the third group of bonding wires 43 is connected to the first pad on the substrate, and the first pad is connected to the power supply terminal, wherein the first pad can be connected to the power supply terminal through the wiring pattern of the substrate, or the first pad can be connected to the power supply terminal through an additional bonding wire.

[0138] The number of the fourth group of bonding wires 44 is at least one. In at least one embodiment, the number of the fourth group of bonding wires 44 is at least two. The second differential feed terminal is connected to the power supply terminal through the fourth group of bonding wires. It can be understood that the second differential feed terminal and the power supply terminal can be directly connected through the fourth group of bonding wires, or can be realized by the fourth group of bonding wires in combination with other connection methods. In at least one embodiment, one end of the fourth group of bonding wires 44 is connected to the second differential feed terminal, and the other end of the fourth group of bonding wires 44 is connected to the power supply terminal. In at least one embodiment, one end of the fourth group of bonding wires 44 is connected to the second differential feed terminal, and the other end of the fourth group of bonding wires 44 is connected to the second pad on the substrate, and the second pad is connected to the power supply terminal, wherein the second pad can be connected to the power supply terminal through the wiring pattern of the substrate, or the second pad can be connected to the power supply terminal through an additional bonding wire.

[0139] The fourth group of bonding wires 44 is arranged between the first group of bonding wires 41 and the third group of bonding wires 43, and the third group of bonding wires 43 is arranged between the second group of bonding wires 42 and the fourth group of bonding wires 44. The fourth group of bonding wires 44 is arranged adjacent to at least part of the bonding wires in the first group of bonding wires 41. Since the first group of bonding wires 41 connects the first differential output terminal and the first group of primary wires, and the fourth group of bonding wires 44 connects the second differential feeding terminal and the power supply terminal, the transmission direction of the RF signal of the fourth group of bonding wires 44 is different from the transmission direction of the RF signal of the first group of bonding wires 41. Therefore, the fourth group of bonding wires 44 can reduce the equivalent parasitic inductance of the first group of bonding wires 41, and can achieve overall performance optimization of the RF power amplifier.

[0140] The third group of bonding wires 43 is arranged adjacent to at least part of the bonding wires in the second group of bonding wires 42. Since the second group of bonding wires 42 connects the second differential output terminal and the second group of primary wires, and the third group of bonding wires 43 connects the second differential feeding terminal and the power supply terminal, the transmission direction of the RF signal of the third group of bonding wires 43 is different from the transmission direction of the RF signal of the second group of bonding wires 42. Therefore, the third group of bonding wires 43 can reduce the equivalent parasitic inductance of the second group of bonding wires 42, and can achieve overall performance optimization of the RF power amplifier.

[0141] In at least one embodiment, one end of the primary wire in the first group of primary wires is connected to the first differential output terminal through a first group of bonding wires, one end of the primary wire in the second group of primary wires is connected to the second differential output terminal through a second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through a third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through a fourth group of bonding wires;

[0142] The second differential feeding terminal is arranged between the first differential output terminal and the first differential feeding terminal, and the first differential feeding terminal is arranged between the second differential output terminal and the second differential feeding terminal.

[0143] like Figure 4 As shown, the second differential feed terminal 24 is arranged between the first differential output terminal 21 and the first differential feed terminal 23, and the first differential feed terminal 23 is arranged between the second differential output terminal 22 and the second differential feed terminal 24. Through the above arrangement, the connection line between the first differential feed terminal 23 and the power supply terminal is arranged adjacent to the second group of bonding wires 42, and the RF signal transmission direction of the connection line between the first differential feed terminal 23 and the power supply terminal is different from that of the second group of bonding wires 42, which can reduce the equivalent parasitic inductance of the second group of bonding wires 42, and the overall performance optimization of the RF power amplifier can be achieved. Through the above arrangement, the connection line between the second differential feed terminal 24 and the power supply terminal is arranged adjacent to the first group of bonding wires 41, and the RF signal transmission direction of the connection line between the second differential feed terminal 24 and the power supply terminal is different from that of the first group of bonding wires 41, which can reduce the equivalent parasitic inductance of the first group of bonding wires 41, and the overall performance optimization of the RF power amplifier can be achieved.

[0144] In at least one embodiment, Fig.13 As shown, the first chip includes a first differential transistor 25 and a second differential transistor 26 , a first output terminal of the first differential transistor 25 is connected to the first feeding terminal 23 , and a second output terminal of the second differential transistor 26 is connected to the second feeding terminal 24 .

[0145] In at least one embodiment, the RF power amplifier further comprises a first inductor connected between the first differential feed terminal and the power supply terminal, and a second inductor connected between the second differential feed terminal and the power supply terminal;

[0146] The first inductor includes a first portion of routing lines arranged on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least part of the first portion of routing lines is opposite to the RF signal transmission direction of the first group of primary lines, or the RF signal transmission direction of at least part of the first portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines.

[0147] The second inductor includes a second portion of routing lines arranged on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least part of the second portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines, or the RF signal transmission direction of at least part of the second portion of routing lines is opposite to the RF signal transmission direction of the first group of primary lines.

[0148] In this embodiment, if Figure 5-7 As shown, the RF power amplifier further includes a first inductor 51 connected between the first differential feeding terminal and the power supply terminal, and a second inductor 52 connected between the second differential feeding terminal and the power supply terminal.

[0149] The first inductor includes a first portion of wiring arranged on the same wiring layer as the first balun on the substrate. Figure 5 and Figure 6 As shown, the first inductor includes a first portion of routing lines arranged on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least part of the first portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines, which can reduce the equivalent parasitic inductance with the second group of primary lines and achieve overall performance optimization of the RF power amplifier.

[0150] like Figure 7 As shown, the first inductor includes a first portion of routing lines arranged on the same wiring layer as the first balun on the substrate, and the RF signal transmission direction of at least part of the first portion of routing lines is opposite to the RF signal transmission direction of the first group of primary lines, which can reduce the equivalent parasitic inductance with the first group of primary lines, and can achieve overall performance optimization of the RF power amplifier. In at least one embodiment, the first portion of routing lines 511 is a routing line closest to the first group of primary lines on the same wiring layer of the substrate where the first inductor and the first balun are arranged.

[0151] It can be understood that the RF signal transmission direction of at least part of the first part of the routing is opposite to the RF signal transmission direction of the first group of primary lines, and it is not strictly required that the two transmission directions form a strict 180-degree reverse direction. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the first part of the routing and the RF signal transmission direction of the first group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the first part of the routing and the RF signal transmission direction of the first group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the first part of the routing and the RF signal transmission direction of the first group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the first part of the routing and the RF signal transmission direction of the first group of primary lines is 180 degrees.

[0152] The second inductor includes a second portion of wiring arranged on the same wiring layer as the first balun on the substrate. Figure 5 and Figure 6As shown, the second inductor includes a second portion of routing 521 arranged on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least part of the second portion of routing is opposite to the RF signal transmission direction of the first group of primary lines, which can reduce the equivalent parasitic inductance with the first group of primary lines and achieve overall performance optimization of the RF power amplifier.

[0153] like Figure 7 As shown, the second inductor includes a second portion of routing lines arranged on the same wiring layer as the first balun on the substrate, and the RF signal transmission direction of at least part of the second portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines, which can reduce the equivalent parasitic inductance with the second group of primary lines, and can achieve overall performance optimization of the RF power amplifier. In at least one embodiment, the second portion of routing lines 521 is a routing line closest to the second group of primary lines on the same wiring layer of the substrate where the second inductor and the first balun are arranged.

[0154] It can be understood that the RF signal transmission direction of at least part of the second part of the routing is opposite to the RF signal transmission direction of the second group of primary lines, and it is not strictly required that the two transmission directions form a strict 180-degree reverse direction. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the second part of the routing and the RF signal transmission direction of the second group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the second part of the routing 521 and the RF signal transmission direction of the second group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the second part of the routing and the RF signal transmission direction of the second group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the second part of the routing and the RF signal transmission direction of the second group of primary lines is 180 degrees.

[0155] In at least one embodiment, the power supply terminal includes a first differential power supply terminal and a second differential power supply terminal, the first differential power supply terminal is arranged on a side of the first group of primary lines away from the second group of primary lines, and the second differential power supply terminal is arranged on a side of the second group of primary lines away from the first group of primary lines;

[0156] The first part of the wiring includes a first sub-line adjacent to the first group of primary lines relative to other parts, and a radio frequency signal transmission direction of the first sub-line is opposite to a radio frequency signal transmission direction of the first group of primary lines;

[0157] The second portion of the wiring includes a second sub-line that is adjacent to the second group of primary lines relative to other portions, and a radio frequency signal transmission direction of the second sub-line is opposite to a radio frequency signal transmission direction of the second group of primary lines.

[0158] like Figure 7 As shown, the power supply terminal includes a first differential power supply terminal 61 and a second differential power supply terminal 62. The first differential power supply terminal 61 is arranged on a side of the first group of primary lines away from the second group of primary lines, and the second differential power supply terminal 62 is arranged on a side of the second group of primary lines away from the first group of primary lines.

[0159] The first portion of wiring includes a first sub-wire 511 that is adjacent to the first group of primary wires relative to other portions, and a radio frequency signal transmission direction of the first sub-wire 511 is opposite to a radio frequency signal transmission direction of the first group of primary wires.

[0160] In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line 511 and the RF signal transmission direction of the first group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line 511 and the RF signal transmission direction of the first group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line 511 and the RF signal transmission direction of the first group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line 511 and the RF signal transmission direction of the first group of primary lines is 180 degrees.

[0161] The second portion of wiring includes a second sub-line 521 that is adjacent to the second group of primary lines relative to other portions, and a radio frequency signal transmission direction of the second sub-line 521 is opposite to a radio frequency signal transmission direction of the second group of primary lines.

[0162] In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-line 521 and the RF signal transmission direction of the second group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-line 521 and the RF signal transmission direction of the second group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-line 521 and the RF signal transmission direction of the second group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-line 521 and the RF signal transmission direction of the second group of primary lines is 180 degrees.

[0163] In at least one embodiment, the power supply end is arranged between the first group of primary lines and the second group of primary lines, the first portion of the routing is arranged between the second group of primary lines and the second portion of the routing, the RF signal transmission direction of at least part of the routing in the first portion of the routing is opposite to the RF signal transmission direction of the second group of primary lines, and the second portion of the routing is arranged between the first group of primary lines and the first portion of the routing, and the RF signal transmission direction of at least part of the routing in the second portion of the routing is opposite to the RF signal transmission direction of the first group of primary lines.

[0164] like Figure 5 and Figure 6 As shown, the power supply terminal is arranged between the first group of primary lines and the second group of primary lines. It can be understood that the two differential paths of the RF power amplifier can be powered by one power supply terminal (such as Figure 5 As shown), it can also be powered by two power supply terminals (as shown Figure 6 shown).

[0165] The first portion of routing lines is arranged between the second group of primary lines and the second portion of routing lines, and the RF signal transmission direction of at least part of the routing lines 531 in the first portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines.

[0166] In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 531 in the first portion of routing and the RF signal transmission direction of the second group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 531 in the first portion of routing and the RF signal transmission direction of the second group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 531 in the first portion of routing and the RF signal transmission direction of the second group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 531 in the first portion of routing and the RF signal transmission direction of the second group of primary lines is 180 degrees.

[0167] The second portion of routing lines is arranged between the first group of primary lines and the first portion of routing lines, and the RF signal transmission direction of at least part of the routing lines 541 in the second portion of routing lines is opposite to the RF signal transmission direction of the first group of primary lines.

[0168] In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 541 in the second portion of routing and the RF signal transmission direction of the first group of primary lines is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 541 in the second portion of routing and the RF signal transmission direction of the first group of primary lines is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 541 in the second portion of routing and the RF signal transmission direction of the first group of primary lines is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of at least part of the routing 541 in the second portion of routing and the RF signal transmission direction of the first group of primary lines is 180 degrees.

[0169] In at least one embodiment, the first group of primary lines includes a first primary line and a second primary line, the first end of the first primary line is connected to the first differential output end, and the second end of the first primary line is grounded through a first through hole; the first end of the second primary line is connected to the first differential output end, and the second end of the second primary line is grounded through a second through hole;

[0170] The second group of primary lines includes a third primary line and a fourth primary line, a first end of the third primary line is connected to the second differential output end, and a second end of the third primary line is grounded through a third through hole; a first end of the fourth primary line is connected to the second differential output end, and a second end of the fourth primary line is grounded through a fourth through hole;

[0171] The first group of secondary lines includes a first secondary line, which is arranged between the first primary line and the second primary line and coupled with the first primary line and the second primary line respectively; the second group of secondary lines includes a third secondary line, which is arranged between the third primary line and the fourth primary line and coupled with the third primary line and the fourth primary line respectively; the first secondary line and the third secondary line are connected in series through the secondary connecting line.

[0172] like Figure 1 As shown, the first group of primary lines 311 includes a first primary line and a second primary line, the first end of the first primary line is connected to the first differential output terminal 21, and the second end of the first primary line is grounded through a first through hole; the first end of the second primary line is connected to the first differential output terminal 21, and the second end of the second primary line is grounded through a second through hole.

[0173] In at least one embodiment, some of the first group of bonding wires connect the first end of the first primary line to the first differential output terminal 21 , and another part of the first group of bonding wires connect the first end of the second primary line to the first differential output terminal 21 .

[0174] In at least one embodiment, the first group of bonding wires realizes the connection between the first end of the first primary wire and the first differential output terminal 21, or the first group of bonding wires realizes the connection between the first end of the second primary wire and the first differential output terminal 21. The first end of the first primary wire and the first end of the second primary wire are connected by a wiring pattern of the substrate or an additional bonding wire.

[0175] The second group of primary lines 312 includes a third primary line and a fourth primary line, the first end of the third primary line is connected to the second differential output terminal 22, and the second end of the third primary line is grounded through a third through hole; the first end of the fourth primary line is connected to the second differential output terminal 22, and the second end of the fourth primary line is grounded through a fourth through hole.

[0176] In at least one embodiment, some of the bonding wires in the second group of bonding wires realize the connection between the first end of the third primary wire and the second differential output terminal 22 , and another part of the bonding wires in the second group of bonding wires realize the connection between the first end of the fourth primary wire and the second differential output terminal 22 .

[0177] In at least one embodiment, the first group of bonding wires realizes the connection between the first end of the third primary wire and the second differential output terminal 22, or the first group of bonding wires realizes the connection between the first end of the fourth primary wire and the second differential output terminal 22. The first end of the third primary wire and the first end of the fourth primary wire are connected by a wiring pattern of the substrate or an additional bonding wire.

[0178] The first group of secondary lines 321 includes a first secondary line, which is arranged between the first primary line and the second primary line and is coupled with the first primary line and the second primary line respectively. The second group of secondary lines 322 includes a third secondary line, which is arranged between the third primary line and the fourth primary line and is coupled with the third primary line and the fourth primary line respectively. The first secondary line and the third secondary line are connected in series through the secondary connecting line 323.

[0179] In at least one embodiment, the first end of the first secondary line is configured to be connected to a signal output terminal, the second end of the first secondary line is connected to the first end of the secondary connecting line, the second end of the secondary connecting line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be grounded; or, the first end of the first secondary line is configured to be grounded, the second end of the first secondary line is connected to the first end of the secondary connecting line, the second end of the secondary connecting line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be connected to the signal output terminal.

[0180] In at least one embodiment, Figure 1 As shown, the first end of the first secondary line is configured to be grounded, the second end of the first secondary line is connected to the first end of the secondary connecting line, the second end of the secondary connecting line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be connected to the signal output end.

[0181] In at least one embodiment, Figure 1 As shown, the first end of the first secondary line is configured to be connected to the signal output end, the second end of the first secondary line is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be grounded. In at least one embodiment, the second end of the third secondary line is grounded through the fifth through hole, and the positions of the third through hole, the fourth through hole and the fifth through hole are not in a straight line. By staggering the through holes, it is avoided that the distance between the primary line and the secondary line is increased in order to set the through holes, thereby reducing the coupling degree between the primary line and the secondary line.

[0182] In at least one embodiment, the first group of primary lines includes a first primary line, a first end of the first primary line is connected to the first differential output terminal, and a second end of the first primary line is grounded through a first through hole;

[0183] The second group of primary lines includes a third primary line, a first end of the third primary line is connected to the second differential output end, and a second end of the third primary line is grounded through a third through hole;

[0184] The first group of secondary wires includes a first secondary wire and a second secondary wire, the first end of the first secondary wire is connected to the first end of the second secondary wire, the second end of the first secondary wire is grounded through a sixth through hole, and the second end of the second secondary wire is grounded through a seventh through hole; the second group of secondary wires includes a third secondary wire and a fourth secondary wire, the first end of the third secondary wire is connected to the first end of the fourth secondary wire, the second end of the third secondary wire is grounded through an eighth through hole, and the second end of the fourth secondary wire is grounded through a ninth through hole;

[0185] The first primary line is disposed between the first secondary line and the second secondary line, and is coupled to the first secondary line and the second secondary line respectively. The third primary line is disposed between the third secondary line and the fourth secondary line, and is coupled to the third secondary line and the fourth secondary line respectively.

[0186] In at least one embodiment, the first end of the first primary wire is connected to the first differential output end through a first group of bonding wires, the first end of the third primary wire is connected to the second differential output end through a second group of bonding wires, the first end of the first secondary wire is connected to the first end of the second secondary wire through a fifth group of bonding wires, and the first end of the third secondary wire is connected to the first end of the fourth secondary wire through a sixth group of bonding wires.

[0187] like Figure 2 As shown, the first end of the first primary line is connected to the first differential output end through a first group of bonding wires 41, the first end of the third primary line is connected to the second differential output end through a second group of bonding wires 42, the first end of the first secondary line is connected to the first end of the second secondary line through a fifth group of bonding wires 45, and the first end of the third secondary line is connected to the first end of the fourth secondary line through a sixth group of bonding wires 46.

[0188] In at least one embodiment, the first chip includes a first differential transistor and a second differential transistor;

[0189] The first output terminal of the first differential transistor 25 is connected to the first differential feed terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal;

[0190] The second output terminal of the second differential transistor 26 is connected to the second differential feed terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal.

[0191] like Figure 8 As shown, the first output terminal of the first differential transistor 25 is connected to the first differential feed terminal 23, and the first output terminal of the first differential transistor 25 is connected to the first differential output terminal 21. The second output terminal of the second differential transistor 26 is connected to the second differential feed terminal 24, and the second output terminal of the second differential transistor 26 is connected to the second differential output terminal 22.

[0192] Wherein, the first differential transistor 25 and the second differential transistor 26 can be implemented as a single amplifying transistor, or can be formed by two or more amplifying transistors connected in series or in parallel, or can be implemented in other conventional ways in the art, which are not limited here. In at least one implementation, the first differential transistor 25 can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. The second differential transistor 26 can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the first differential transistor 25 is a heterojunction transistor (HBT), and the second differential transistor 26 is a heterojunction transistor (HBT). Exemplarily, the first differential transistor 25 is a heterojunction transistor implemented using a GaAs process, and the second differential transistor 26 is a heterojunction transistor implemented using a GaAs process.

[0193] In at least one implementation, the first differential transistor 25 is an NPN transistor, and the second differential transistor 26 is an NPN transistor. Specifically, the collector of the first differential transistor 25 is connected to the first differential feed terminal 23, and the collector of the first differential transistor is connected to the first differential output terminal 21, the emitter of the first differential transistor 25 is configured to be grounded, and the base of the first differential transistor is configured to receive the input first differential input RF signal and perform amplification processing. The collector of the second differential transistor 26 is connected to the second differential feed terminal 24, and the collector of the second differential transistor is connected to the second differential output terminal 22, the emitter of the second differential transistor 26 is configured to be grounded, and the base of the second differential transistor is configured to receive the input second differential input RF signal and perform amplification processing.

[0194] In at least one embodiment, the first output terminal of the first differential transistor is connected to the first differential output terminal through at least one passive element, and the second output terminal of the second differential transistor is connected to the second differential output terminal through at least one passive element.

[0195] The passive element may be an inductor, a capacitor, a resistor, etc. The passive element may be connected in series between the first output terminal of the first differential transistor and the first differential output terminal, or connected in parallel between two differential paths, or one end of the passive element may be connected to a node between the first output terminal and the first differential output terminal, and the other end may be grounded.

[0196] In at least one embodiment, the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor.

[0197] like Fig. 9As shown, the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor C1, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor C2.

[0198] In at least one embodiment, the RF power amplifier further includes a third inductor and a third capacitor;

[0199] The first end of the first group of secondary lines is connected to the first end of the third inductor, the second end of the first group of secondary lines is connected to the first end of the secondary connecting line, the second end of the secondary connecting line is connected to the first end of the second group of secondary lines, the second end of the second group of secondary lines is configured to be grounded, the second end of the third inductor is connected to the first end of the third capacitor, and the second end of the third capacitor is configured to be grounded;

[0200] The secondary connecting line, the third inductor and the third capacitor are configured to suppress harmonic signals of the radio frequency power amplifier.

[0201] In this embodiment, the harmonic signal of the RF power amplifier is suppressed by combining the secondary connecting line and the third inductor together with the third capacitor, which fully utilizes the equivalent inductance of the secondary connecting line, reduces the value of the third inductor, and improves the overall integration.

[0202] In at least one embodiment, the inductance of the third inductor is greater than the inductance of the secondary connecting line. In at least one embodiment, the inductance of the third inductor is less than the inductance of the secondary connecting line.

[0203] In at least one embodiment, the secondary portion further comprises a third set of secondary wires. Fig.11 As shown, the secondary part also includes a third group of secondary lines 324. The third group of secondary lines is connected in series with the first group of secondary lines. The third group of secondary lines 324 includes at least one secondary line. One end of the secondary line in the third group of secondary lines 324 is connected to one end of the first group of secondary lines 321, and the other end of the secondary line in the third group of secondary lines 324 is configured to be grounded. It can be understood that if the third group of secondary lines 324 includes more than two secondary lines, one end of each secondary line in the third group of secondary lines 324 is connected to one end of the first group of secondary lines 321, and the other end is configured to be grounded. It can be understood that the number of secondary lines in the first group of secondary lines can be more (more than three), which is not limited here.

[0204] In at least one embodiment, the secondary part further includes a fourth group of secondary lines. The fourth group of secondary lines and the second group of secondary lines are connected in series. Fig.10As shown, the secondary part also includes a fourth group of secondary lines 325. The fourth group of secondary lines 325 includes at least one secondary line. One end of the secondary line in the fourth group of secondary lines 325 is connected to one end of the second group of secondary lines 322, and the other end of the secondary line in the fourth group of secondary lines 325 is configured to be connected to the signal output terminal. It can be understood that if the fourth group of secondary lines 325 includes more than two secondary lines, one end of each secondary line in the fourth group of secondary lines 325 is connected to one end of the second group of secondary lines 322, and the other end is configured to be connected to the signal output terminal. It can be understood that the number of secondary lines in the first group of secondary lines can be more (more than three), which is not limited here.

[0205] In at least one embodiment, the third group of secondary lines and the fourth group of secondary lines are at least partially coupled. Fig.11 As shown, there are some adjacent routing lines in the third group of secondary lines and the fourth group of secondary lines, which can achieve mutual coupling, and because the mutually coupled parts of the third group of secondary lines and the fourth group of secondary lines are coupled in the same direction, the equivalent parasitic inductance is increased, which can participate in matching or harmonic suppression, reduce the routing length, further reduce the overall area of ​​the RF power amplifier, and improve the integration.

[0206] In at least one embodiment, the extension direction of the third group of secondary wires and the fourth group of secondary wires is different from that of the first group of secondary wires and / or the second group of secondary wires.

[0207] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0208] substrate;

[0209] A first chip, arranged on the substrate, comprising a first differential transistor, a second differential transistor, a first differential output terminal, a second differential output terminal, a first differential feeding terminal and a second differential feeding terminal, wherein the first output terminal of the first differential transistor is connected to the first differential feeding terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, the second output terminal of the second differential transistor is connected to the second differential feeding terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor;

[0210] A first balun, disposed on the substrate, comprising a primary part and a secondary part;

[0211] The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the second group of primary wires is configured to be connected to the second differential output terminal, and the other end is configured to be grounded;

[0212] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines and extends in the same direction, and the second group of secondary lines is coupled with the second group of primary lines and extends in the same direction;

[0213] A power supply terminal is arranged on the substrate, the first differential feeding terminal is connected to the power supply terminal, and the second differential feeding terminal is connected to the power supply terminal.

[0214] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0215] substrate;

[0216] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0217] The first balun, consisting of the primary and secondary sections;

[0218] The first end of the primary part is connected to the first differential output end through a first group of bonding wires, the second end of the primary part is connected to the second differential output end through a second group of bonding wires, the first differential feed end is connected to the power supply end through a third group of bonding wires, and the second differential feed end is connected to the power supply end through a fourth group of bonding wires;

[0219] The fourth group of bonding wires is disposed between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is disposed between the second group of bonding wires and the fourth group of bonding wires.

[0220] In this embodiment, if Fig.10 As shown, the first chip 20 disposed on the substrate includes a first differential output terminal 21 , a second differential output terminal 22 , a first differential feeding terminal 23 and a second differential feeding terminal 24 .

[0221] The first balun includes a primary part and a secondary part. In this embodiment, the first balun can adopt an existing balun structure, which is not limited here. In at least one embodiment, the first balun can be implemented in the manner described in any of the above embodiments or implementations. In at least one embodiment, the first balun is arranged on the substrate 10. In at least one embodiment, the first balun is arranged in a second chip. Optionally, the second chip is an IPD chip.

[0222] The first end of the primary part is connected to the first differential output end 21 through a first group of bonding wires 41, the second end of the primary part is connected to the second differential output end 22 through a second group of bonding wires 42, the first differential feed end is connected to the power supply end through a third group of bonding wires 43, and the second differential feed end is connected to the power supply end through a fourth group of bonding wires 44;

[0223] The fourth group of bonding wires 44 is disposed between the first group of bonding wires 41 and the third group of bonding wires 43 , and the third group of bonding wires 43 is disposed between the second group of bonding wires 42 and the fourth group of bonding wires 44 .

[0224] The fourth group of bonding wires 44 is arranged adjacent to at least part of the bonding wires in the first group of bonding wires 41. Since the first group of bonding wires 41 connects the first differential output terminal and the first end of the primary part, and the fourth group of bonding wires 44 connects the second differential feeding terminal and the power supply terminal, the transmission direction of the RF signal of the fourth group of bonding wires 44 is different from the transmission direction of the RF signal of the first group of bonding wires 41. Therefore, the fourth group of bonding wires 44 can reduce the equivalent parasitic inductance of the first group of bonding wires 41, and can achieve overall performance optimization of the RF power amplifier.

[0225] The third group of bonding wires 43 is arranged adjacent to at least some of the bonding wires in the second group of bonding wires 42. Since the second group of bonding wires 42 connects the second differential output terminal and the second end of the primary part, and the third group of bonding wires 43 connects the second differential feeding terminal and the power supply terminal, the transmission direction of the RF signal of the third group of bonding wires 43 is different from the transmission direction of the RF signal of the second group of bonding wires 42. Therefore, the third group of bonding wires 43 can reduce the equivalent parasitic inductance of the second group of bonding wires 42, and can achieve overall performance optimization of the RF power amplifier.

[0226] In at least one embodiment, the second differential feed terminal is arranged between the first differential output terminal and the first differential feed terminal, and the first differential feed terminal is arranged between the second differential output terminal and the second differential feed terminal.

[0227] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0228] A substrate is provided with a first differential power terminal and a second differential power terminal;

[0229] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0230] A first balun, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end, and a second end of the primary part is connected to the second differential output end;

[0231] a first inductor, one end of the first inductor being connected to the first differential power supply end, the other end of the first inductor being connected to the first differential feeding end, the first inductor comprising a first sub-trace, the primary part comprising a first primary trace, the first sub-trace and the first primary trace being arranged on the same wiring layer of the substrate and being arranged adjacent to each other, and a radio frequency signal transmission direction of the first sub-trace being opposite to a radio frequency signal transmission direction of the first primary trace;

[0232] A second inductor, one end of the second inductor is connected to the second differential power supply end, the other end of the second inductor is connected to the second differential feeding end, the second inductor includes a second sub-route, the primary part includes a second primary route, the second sub-route and the second primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the second sub-route is opposite to the RF signal transmission direction of the second primary route.

[0233] In this embodiment, Fig.14 For example, the first chip 20 is disposed on the substrate 10 , and includes a first differential output terminal 21 , a second differential output terminal 22 , a first differential feeding terminal 23 and a second differential feeding terminal 24 .

[0234] The first balun 30 is disposed on the substrate 10 . The first balun can be implemented by using at least one wiring layer of the substrate 10 .

[0235] In at least one embodiment, the first balun is disposed on the same wiring layer of the substrate. It can be understood that in this embodiment, the first balun can be implemented using the balun structure described in any of the above embodiments.

[0236] In at least one embodiment, the first balun is implemented using at least two wiring layers of the substrate. Specifically, the primary part of the first balun can be implemented using at least two wiring layers, or the secondary part can be implemented using at least two wiring layers, or the primary part and the secondary part can be implemented using different wiring layers, or any combination of the above implementation methods.

[0237] The first balun includes a primary part and a secondary part, wherein the first end of the primary part is connected to the first differential output end, and the second end of the primary part is connected to the second differential output end. It can be understood that the connection method between the first end of the primary part and the first differential output end is not limited here, and the connection method between the second end of the primary part and the second differential output end is not limited here.

[0238] Two ends of the first inductor 51 are connected to the first differential output terminal and the first differential feeding terminal respectively. Fig.14 As shown, the first inductor 51 includes a first sub-trace 512. The primary part includes a first primary trace 313. The first sub-trace 512 and the first primary trace 313 are arranged on the same wiring layer of the substrate and are arranged adjacent to each other. The first sub-trace 512 and the first primary trace 313 are arranged adjacent to each other, which may mean that the first sub-trace is closer to the first primary trace relative to other traces arranged on the same wiring layer as the first inductor, or the first primary trace is closer to the first sub-trace relative to other traces in the primary part arranged on the same wiring layer as the first sub-trace.

[0239] The RF signal transmission direction of the first sub-route is opposite to that of the first primary route. In this way, the equivalent parasitic inductance of the first primary route can be reduced, and the overall performance of the RF power amplifier can be optimized. It can be understood that the RF signal transmission direction of the first sub-route is opposite to that of the first primary route, and it is not strictly required that the two transmission directions form a strict 180-degree reverse direction. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is 180 degrees.

[0240] Two ends of the second inductor 52 are connected to the second differential output terminal and the second differential feeding terminal respectively. Fig.14As shown, the second inductor 52 includes a second sub-trace 522. The primary part includes a second primary trace 314. The second sub-trace 522 and the second primary trace 314 are arranged on the same wiring layer of the substrate and are arranged adjacent to each other. The second sub-trace 522 and the second primary trace 314 being arranged adjacent to each other may mean that the second sub-trace is closer to the second primary trace relative to other traces of the second inductor arranged on the same wiring layer as the second primary trace, or the second primary trace is closer to the second sub-trace relative to other traces in the primary part arranged on the same wiring layer as the second sub-trace.

[0241] The RF signal transmission direction of the second sub-route is opposite to that of the second primary route. In this way, the equivalent parasitic inductance of the second primary route can be reduced, and the overall performance of the RF power amplifier can be optimized. It can be understood that the RF signal transmission direction of the second sub-route is opposite to that of the second primary route, and it is not strictly required that the two transmission directions form a strict 180-degree reverse direction. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is 180 degrees.

[0242] In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is greater than 160 degrees, and an angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is greater than 160 degrees.

[0243] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0244] A substrate is provided with a first differential power terminal and a second differential power terminal;

[0245] A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal;

[0246] A first balun, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end through a first connection path, and a second end of the primary part is connected to the second differential output end through a second connection path;

[0247] A power supply terminal, arranged on the substrate, the first differential feed terminal being connected to the power supply terminal through a third connection path, and the second differential feed terminal being connected to the power supply terminal through a fourth connection path;

[0248] A transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the second connection path, or a transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines;

[0249] A transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first connection path, or a transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first group of primary lines or the second group of primary lines.

[0250] The first connection path may include a wiring pattern in a substrate, a wiring pattern in a chip, a bonding wire, etc. to achieve electrical connection. In at least one embodiment, the first connection path may adopt the connection method between the first end of the primary part and the first differential output end described in any of the above embodiments.

[0251] The second connection path may include a wiring pattern in a substrate, a wiring pattern in a chip, a bonding wire, etc. to achieve electrical connection. In at least one embodiment, the second connection path may adopt the connection method between the second end of the primary part and the second differential output end described in any of the above embodiments.

[0252] The third connection path may include a wiring pattern in a substrate, a wiring pattern in a chip, a bonding wire, etc. to achieve electrical connection. In at least one embodiment, the third connection path may adopt the connection method between the first differential feed terminal and the power supply terminal described in any of the above embodiments.

[0253] The fourth connection path may include a wiring pattern in a substrate, a wiring pattern in a chip, a bonding wire, etc. to achieve electrical connection. In at least one embodiment, the fourth connection path may adopt the connection method between the second differential feeding terminal and the power supply terminal described in any of the above embodiments.

[0254] The transmission direction of at least part of the radio frequency signal in the third connection path is opposite to the transmission direction of at least part of the radio frequency signal in the second connection path. Figure 4 As shown, the third connection path includes a third group of bonding wires 43 , the second connection path includes a second group of bonding wires 42 , and the RF signal transmission direction of the third group of bonding wires 43 is opposite to that of the second group of bonding wires 42 .

[0255] The transmission direction of at least part of the radio frequency signal in the third connection path is opposite to the transmission direction of at least part of the radio frequency signal in the first group of primary lines. Figure 7 As shown, the third connection path includes a first sub-route 511 , and the RF signal transmission direction of the first sub-route 511 is opposite to the RF signal transmission direction of the first group of primary lines 311 .

[0256] The transmission direction of at least part of the radio frequency signal in the third connection path is opposite to the transmission direction of at least part of the radio frequency signal in the second group of primary lines. Figure 6 As shown, the third connection path includes a portion of the wiring 531 , and the RF signal transmission direction of the portion of the wiring 531 is opposite to the RF signal transmission direction of the second group of primary lines 312 .

[0257] The transmission direction of at least part of the radio frequency signal in the fourth connection path is opposite to the transmission direction of at least part of the radio frequency signal in the first connection path. Figure 4 As shown, the fourth connection path includes a fourth group of bonding wires 44 , the first connection path includes a first group of bonding wires 41 , and the RF signal transmission direction of the fourth group of bonding wires 44 is opposite to that of the first group of bonding wires 41 .

[0258] The transmission direction of at least part of the radio frequency signal in the fourth connection path is opposite to the transmission direction of at least part of the radio frequency signal in the first group of primary lines. Figure 6 As shown, the fourth connection path includes a portion of the wiring 532 , and the RF signal transmission direction of the portion of the wiring 532 is opposite to the RF signal transmission direction of the first group of primary lines 311 .

[0259] The transmission direction of at least part of the radio frequency signal in the fourth connection path is opposite to the transmission direction of at least part of the radio frequency signal in the second group of primary lines. Figure 7 As shown, the fourth connection path includes the second sub-route 521 , and the RF signal transmission direction of the second sub-route 521 is opposite to the RF signal transmission direction of the second group of primary lines 312 .

[0260] In at least one embodiment, the present application provides a radio frequency power amplifier, including:

[0261] substrate;

[0262] A first chip, disposed on the substrate, comprising a first output terminal;

[0263] A first transformer, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first output end, and a second end of the primary part is configured to be grounded or connected to a power supply end;

[0264] A first inductor is connected in a feeding path of the RF power amplifier, wherein the first inductor includes a first sub-route, the primary part includes a first primary route, the first sub-route and the first primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the first sub-route is opposite to the RF signal transmission direction of the first primary route.

[0265] In this embodiment, Fig.15 For example, the substrate 10 includes a first chip 20 and a first transformer. The first chip 10 includes a first output terminal 25, which is an output terminal of a radio frequency signal. The radio frequency signal can be a signal after the previous stage radio frequency input signal is power amplified by the first chip.

[0266] The first transformer is arranged on the substrate, and includes a primary part and a secondary part. The first end of the primary part is connected to the first output terminal 25, and the second end of the primary part is configured to be grounded or connected to a power supply terminal. The first transformer can adopt an existing transformer implementation structure. In at least one embodiment, the first transformer can adopt the same structure as the first balun described in any of the above embodiments or embodiments. In at least one embodiment, the first end of the secondary part is configured to be connected to a signal output terminal, and the second end of the secondary part is configured to be grounded.

[0267] The first inductor is connected in a feeding path of the RF power amplifier. It can be understood that the feeding path can be a path for supplying power to the amplifying transistor in the first chip.

[0268] In at least one embodiment, one end of the first inductor is connected to the power supply terminal, the other end of the first inductor is connected to the first feeding terminal 26 of the first chip, and the second end of the primary part is configured to be grounded.

[0269] In at least one embodiment, one end of the first inductor is connected to the power supply terminal, and the other end of the first inductor is connected to the second end of the primary part. In this embodiment, the second end of the primary part is connected to the power supply terminal through the first inductor.

[0270] The first inductor includes a first sub-line, the primary part includes a first primary line, the first sub-line and the first primary line are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the first sub-line is opposite to the RF signal transmission direction of the first primary line. Fig.15 As shown, the first sub-route 512 of the first inductor 51 and the first primary route 313 of the primary part are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the first sub-route 512 is opposite to the RF signal transmission direction of the first primary route 313.

[0271] In at least one embodiment, the first chip includes a first amplifying transistor;

[0272] The third output terminal of the first amplifying transistor is connected to the first feeding terminal, and the third output terminal of the first amplifying transistor is connected to the first output terminal.

[0273] Among them, the first amplifier transistor can be implemented as a single amplifier transistor, or it can be formed by two or more amplifier transistors connected in series or in parallel, or other conventional implementation methods in the art can be adopted, which are not limited here. In at least one implementation, the first amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the first amplifier transistor is a heterojunction transistor (HBT). Exemplarily, the first amplifier transistor is a heterojunction transistor implemented using a GaAs process.

[0274] In at least one implementation, the first amplifying transistor is an NPN transistor. Specifically, the collector of the first amplifying transistor is connected to the first feeding terminal, the collector of the first amplifying transistor is connected to the first output terminal, the emitter of the first amplifying transistor is configured to be grounded, and the base of the first amplifying transistor is configured to receive an input RF signal and perform amplification processing.

[0275] In at least one embodiment, the third output terminal of the first amplifying transistor is connected to the first output terminal through at least one passive element.

[0276] The passive element may be an inductor, a capacitor, a resistor, etc. The passive element may be connected in series between the third output terminal and the first output terminal of the first amplifying transistor, or in parallel between two differential paths, or one end of the passive element may be connected to a node between the third output terminal and the first output terminal, and the other end may be grounded.

[0277] In at least one embodiment, the third output terminal of the first amplifying transistor is connected to the first output terminal through a first series capacitor.

[0278] In at least one embodiment, an angle formed by a radio frequency signal transmission direction of the first sub-route and a radio frequency signal transmission direction of the first primary route is greater than 135 degrees.

[0279] In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line and the RF signal transmission direction of the first primary routing is greater than 90 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line and the RF signal transmission direction of the first primary routing is greater than 135 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line and the RF signal transmission direction of the first primary routing is greater than 160 degrees. In at least one embodiment, the angle formed by the RF signal transmission direction of the first sub-line and the RF signal transmission direction of the first primary routing is 180 degrees.

[0280] In at least one embodiment, the primary portion and the secondary portion extend in the same direction. Fig.16 As shown, the primary part and the secondary part of the first transformer extend in the same direction. In at least one embodiment, the first transformer is disposed on the same wiring layer of the substrate.

[0281] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0282] substrate;

[0283] A first chip, disposed on the substrate, comprising a first differential output terminal and a second differential output terminal;

[0284] The first balun, consisting of the primary and secondary sections;

[0285] The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, the other end is configured to be grounded, and a virtual line formed by one end of the first group of primary wires and the other end of the first group of primary wires extends along a first direction; one end of the second group of primary wires is configured to be connected to the second differential output terminal, the other end is configured to be grounded, and a virtual line formed by one end of the second group of primary wires and the other end of the second group of primary wires extends along a second direction;

[0286] The secondary part includes a first group of secondary lines and a second group of secondary lines, the first group of secondary lines and the second group of secondary lines are connected in series, the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0287] A virtual line formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along a first direction, and a virtual line formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along a second direction.

[0288] In this embodiment, the first balun 30 includes a primary part and a secondary part. Optionally, the first balun 30 can be arranged on a substrate, or the first balun 30 can be arranged in a first chip, or the first balun is arranged in a chip different from the first chip. In at least one embodiment, the first balun is at least partially arranged in the first chip and at least partially arranged on the substrate. In at least one embodiment, the first balun is at least partially arranged in the first chip and at least partially arranged in a chip different from the first chip.

[0289] The primary part includes the first set of primary wires and the second set of primary wires. Fig.17 , Fig.18 and Fig.19 As shown, the first group of primary lines 311 includes at least one primary line. It can be understood that the primary lines in the first group of primary lines can be in the shape of a straight line, a curve, an arc line, or a folded line with any bending shape. The second group of primary lines 312 includes at least one primary line. It can be understood that the primary lines in the second group of primary lines 312 can be in the shape of a straight line, a curve, an arc line, or a folded line with any bending shape. For example, Fig.17 As shown, the primary lines in the first group of primary lines and the second group of primary lines are both straight lines. Fig.18 As shown, the primary wires in the first group of primary wires and the second group of primary wires are all arc-shaped wires.

[0290] One end of the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded. That is, one end of any primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end of any primary line is configured to be grounded. A virtual line formed by one end of the first group of primary lines and the other end of the first group of primary lines extends along the first direction, that is, a line formed by two end points of the first group of primary lines extends along the first direction, such as Fig.18 The dashed line shown indicates the direction.

[0291] One end of the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded. That is, one end of any primary line in the second group of primary lines is configured to be connected to the first differential output terminal, and the other end of any primary line is configured to be grounded. A virtual line formed by one end of the second group of primary lines and the other end of the second group of primary lines extends along the second direction, that is, a line formed by two end points of the second group of primary lines extends along the second direction, such as Fig.18 The direction indicated by the other dotted line shown.

[0292] by Fig.17 , Fig.18 and Fig.19 For example, the secondary part includes a first group of secondary lines and a second group of secondary lines. The first group of secondary lines 321 and the second group of secondary lines 322 are connected in series. The first group of secondary lines is coupled with the first group of primary lines, and the second group of secondary lines is coupled with the second group of primary lines.

[0293] The first group of secondary wires 321 includes at least one primary wire. It is understood that the secondary wires in the first group of secondary wires can be in the shape of a straight line, a curve, an arc line, or a folded line with any bending shape. The second group of secondary wires 322 includes at least one primary wire. It is understood that the secondary wires in the second group of secondary wires can be in the shape of a straight line, a curve, an arc line, or a folded line with any bending shape. For example, Fig.17 As shown in FIG. 1 , the secondary lines in the first group of secondary lines and the second group of secondary lines are both straight lines. Fig.18 As shown, the secondary lines in the first group of secondary lines and the second group of secondary lines are all arc lines.

[0294] The virtual line formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along the first direction, that is, the line formed by the two end points of the first group of secondary lines extends along the first direction. Fig.18 The virtual line formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along the second direction, that is, the line formed by the two end points of the second group of secondary lines extends along the second direction. Fig.18 The direction indicated by the other dotted line shown.

[0295] In this embodiment, the primary part of the first balun includes a first group of primary lines and a second group of primary lines, and the first group of primary lines and the second group of primary lines are separately arranged. The secondary part includes a first group of secondary lines and a second group of secondary lines, and a virtual line formed by one end of the first group of primary lines and the other end of the first group of primary lines extends along a first direction, a virtual line formed by one end of the second group of primary lines and the other end of the second group of primary lines extends along a second direction, a virtual line formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along a first direction, and a virtual line formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along a second direction. The wiring structure of the balun is greatly flexible compared with the traditional balun, and the disadvantages of the traditional balun that the coupling area is large and difficult to use are effectively reduced, which can facilitate the RF power amplifier to achieve better integration, and the follow-up coupling of the primary and secondary also ensures the coupling performance of the balun.

[0296] In at least one embodiment, the first direction and the second direction are different directions, that is, the first direction and the second direction are not parallel to each other. In at least one embodiment, the first direction and the second direction are antiparallel. Exemplarily, the first direction is vertically upward, and the second direction is vertically downward. Alternatively, the first direction is horizontally to the left, and the second direction is horizontally to the right.

[0297] In at least one embodiment, the first direction is perpendicular to the second direction.

[0298] In at least one embodiment, the first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along a third direction, the second differential transistor array is arranged along a fourth direction, and the third direction and the fourth direction are different directions; the output end of the first differential transistor array is connected to the first differential output end, and the output end of the second differential transistor array is connected to the second differential output end.

[0299] Wherein, the first differential transistor array may be composed of a plurality of amplifying transistors. Optionally, it is formed by connecting a plurality of amplifying transistors in parallel. Exemplarily, the first differential transistor array may be the first amplifying transistor described in any of the above embodiments. The first differential transistor array is arranged along a third direction. Wherein, the first differential transistor being arranged along the third direction may refer to the first differential transistor array being arranged along the third direction in its entire length direction. It can be understood that the first differential transistor may be a multi-row structure, in which case each row is arranged along the third direction, or at least one row is arranged along the third direction. The output end of the first differential transistor array is connected to the first differential output end, specifically, the output end of each amplifying transistor in the first differential transistor array is respectively connected to the first differential output end, or the output end of each amplifying transistor is interconnected and then uniformly connected to the first differential output end. Wherein, the second differential transistor array may be composed of a plurality of amplifying transistors. Optionally, it is formed by connecting a plurality of amplifying transistors in parallel. Exemplarily, the second differential transistor array may be the second amplifying transistor described in any of the above embodiments. The second differential transistor array is arranged along a fourth direction. The second differential transistors are arranged along the fourth direction, which means that the length direction of the second differential transistor array is arranged along the fourth direction. It can be understood that the second differential transistors can be arranged in multiple rows, in which case each row is arranged along the fourth direction, or at least one row is arranged along the fourth direction.

[0300] The output end of the second differential transistor array is connected to the second differential output end. Specifically, the output end of each amplifying transistor in the second differential transistor array is respectively connected to the second differential output end, or the output end of each amplifying transistor is interconnected and then uniformly connected to the second differential output end.

[0301] The third direction and the fourth direction are different directions, that is, the third direction and the fourth direction are not parallel. In at least one embodiment, the third direction and the fourth direction are perpendicular to each other. In at least one embodiment, the angle formed by the third direction and the fourth direction is greater than 0 degrees and less than 90 degrees. In at least one embodiment, the angle formed by the third direction and the fourth direction is greater than or equal to 0 degrees and less than 60 degrees. In at least one embodiment, Figure 3 As shown, the angle formed by the third direction and the fourth direction is greater than 0 degree and less than 45 degrees.

[0302] In this embodiment, due to the separate setting of the first balun, the first differential transistor array and the second differential transistor array are arranged in different directions accordingly, which makes the layout of the first chip itself more flexible and convenient for further adaptation to the structure of the first balun, thereby reducing the loss caused by additional routing and further improving the integration of the overall RF power amplifier, thereby ensuring the realization of performance.

[0303] In at least one embodiment, the first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along the second direction, and the second differential transistor array is arranged along the first direction; the output end of the first differential transistor array is connected to the first differential output end, and the output end of the second differential transistor array is connected to the second differential output end.

[0304] like Fig. 20 As shown, the first differential transistor array 251 is arranged along the second direction, and the second differential transistor array 261 is arranged along the first direction. That is, the arrangement direction of the second differential transistor array 261 is the same as the connection direction formed by one end of the first group of primary lines and the other end of the first group of primary lines. The arrangement direction of the first differential transistor array 251 is the same as the connection direction formed by one end of the second group of primary lines and the other end of the second group of primary lines.

[0305] In at least one embodiment, the first group of primary wires and the first group of secondary wires extend along a first direction, and the second group of primary wires and the second group of secondary wires extend along a second direction. Fig. 20 As shown, the first group of primary lines 311 and the first group of secondary lines 321 extend along a first direction, and the second group of primary lines 312 and the second group of secondary lines 322 extend along a second direction. The overall coupling performance of the balun can be improved, the rationality of the overall layout of the RF power amplifier can be further ensured, and the integration can be further improved while ensuring the performance.

[0306] In at least one embodiment, the first direction is the direction of one side of the first chip, and the second direction is the direction of another side of the second chip. In at least one embodiment, the first direction is perpendicular to the second direction.

[0307] In at least one embodiment, one end of the first group of primary lines and one end of the first group of secondary lines are arranged adjacent to a midpoint of the first differential transistor array in the second direction, and one end of the second group of primary lines and one end of the second group of secondary lines are arranged adjacent to a midpoint of the second differential transistor array in the first direction.

[0308] like Fig.23 As shown, one end of the first group of primary lines and one end of the first group of secondary lines are arranged near the midpoint of the first differential transistor array 251 in the second direction. One end of the second group of primary lines and one end of the second group of secondary lines are arranged near the midpoint of the second differential transistor array 261 in the first direction. In this way, it is ensured that the length of the connection path between each transistor in the first differential transistor array and the first balun is more balanced, and it is ensured that the length of the connection path between each transistor in the second differential transistor array and the first balun is more balanced, which further ensures the performance of the RF power amplifier.

[0309] In at least one embodiment, the RF power amplifier further includes a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series.

[0310] like Figure 17-Figure 19 As shown, the secondary connection line 323 connects the first group of secondary lines and the second group of secondary lines in series. The secondary connection line 323 can be set on the substrate or in the first chip, or the secondary connection line 323 can be partially set on the substrate and partially set in the first chip. In at least one embodiment, the secondary connection line is at least partially implemented by bonding wires.

[0311] In at least one embodiment, the first balun is disposed on the substrate, and the first chip is disposed on the substrate in an inverted manner. Fig. 20 As shown, the first balun 30 is disposed on the substrate, and the first chip 20 is disposed on the substrate 10 in a flip-down manner. The connection between the first chip 20 and the first balun 30 can be achieved through bumps on the first chip and corresponding pads on the substrate.

[0312] In at least one embodiment, the secondary connection line is disposed on the substrate, and a longitudinal projection of the first chip on the substrate at least covers a portion of the secondary connection line.

[0313] like Fig.24As shown, the first chip 20 is disposed on the substrate 10 in an inverted manner. The secondary connection line 323 is realized by a wiring pattern on the substrate, and the longitudinal projection of the first chip on the substrate at least covers part of the secondary connection line, further improving the overall integration.

[0314] In at least one embodiment, the secondary connection lines are disposed in the first chip 20 , and the first group of secondary lines and the second group of secondary lines disposed on the substrate are connected in series via the secondary connection lines in the first chip 20 .

[0315] In at least one embodiment, the primary part, the first group of secondary lines, and the second group of secondary lines are disposed on the substrate, and the secondary connecting lines are at least partially disposed on the first chip.

[0316] In at least one embodiment, one end of the first group of primary wires is connected to the first differential output terminal through a first group of bonding wires, and one end of the second group of primary wires is connected to the second differential output terminal through a second group of bonding wires;

[0317] One end of the first group of secondary wires is connected to the first end of the secondary connection wire in the first chip through the seventh group of bonding wires, and one end of the second group of secondary wires is connected to the second end of the secondary connection wire in the first chip through the eighth group of bonding wires.

[0318] like Fig.17 As shown, one end of the first group of primary wires is connected to the first differential output terminal through a first group of bonding wires 41, and one end of the second group of primary wires is connected to the second differential output terminal through a second group of bonding wires 42;

[0319] One end of the first group of secondary wires is connected to the first end of the secondary connection wire in the first chip through the seventh group of bonding wires 47, and one end of the second group of secondary wires is connected to the second end of the secondary connection wire in the first chip through the eighth group of bonding wires 48. The number of the seventh group of bonding wires 47 is at least one. In at least one embodiment, the number of the seventh group of bonding wires 47 is at least two. In at least one embodiment, the number of the seventh group of bonding wires 47 is 4-8. The number of the eighth group of bonding wires 48 is at least one. In at least one embodiment, the number of the eighth group of bonding wires 48 is at least two. In at least one embodiment, the number of the eighth group of bonding wires 48 is 4-8.

[0320] In at least one embodiment, the first group of bonding wires 41 and the seventh group of bonding wires 47 are at least partially coupled, and the second group of bonding wires 42 and the eighth group of bonding wires 48 are at least partially coupled. Since the first group of bonding wires 41 and the seventh group of bonding wires 47 are coupled, and the second group of bonding wires 42 and the eighth group of bonding wires 48 are coupled, these groups of bonding wires are equivalent to becoming a part of the first balun, thereby reducing the adverse effects of the parasitic inductance generated by these groups of bonding wires on the whole, and further ensuring the performance of the RF power amplifier.

[0321] In at least one embodiment, a passive unit network is further included, and the passive unit network is composed of at least one passive element, and the passive element can be one of a resistor, a capacitor, and an inductor. One end of the first group of secondary lines is connected to the first end of the passive unit network, and the other end of the first group of secondary lines is configured to be grounded, and one end of the second group of secondary lines is connected to the second end of the passive unit network, and the other end of the second group of secondary lines is configured to be connected to the signal output end. In at least one embodiment, the passive unit network includes an inductor, and one end of the first group of secondary lines is connected to the first end of the inductor, and one end of the second group of secondary lines is connected to the second end of the inductor.

[0322] In at least one embodiment, the passive unit network includes a capacitor, one end of the first set of secondary lines is connected to a first end of the capacitor, and one end of the second set of secondary lines is connected to a second end of the capacitor.

[0323] In at least one embodiment, the first chip also includes a fourth capacitor, one end of the first group of secondary lines is connected to the first end of the fourth capacitor, the other end of the first group of secondary lines is configured to be grounded, one end of the second group of secondary lines is connected to the second end of the fourth capacitor, and the other end of the second group of secondary lines is configured to be connected to the signal output end.

[0324] In this embodiment, if Fig. 22 As shown, the first chip 20 also includes a fourth capacitor, one end of the first group of secondary lines is connected to the first end of the fourth capacitor, the other end of the first group of secondary lines is configured to be grounded, one end of the second group of secondary lines is connected to the second end of the fourth capacitor, and the other end of the second group of secondary lines is configured to be connected to the signal output end.

[0325] In this embodiment, by configuring the fourth capacitor in the chip, the Q value of the capacitor is guaranteed, and the wiring connection is also facilitated, while ensuring the integration and performance of the radio frequency power amplifier.

[0326] In at least one embodiment, the first group of secondary wires and the first group of primary wires are arranged on the same wiring layer of the substrate, and the second group of secondary wires and the second group of primary wires are arranged on the same wiring layer of the substrate. In this embodiment, the first group of secondary wires and the first group of primary wires are arranged on the same wiring layer of the substrate, and the second group of secondary wires and the second group of primary wires are arranged on the same wiring layer of the substrate. That is, the primary part and the secondary part of the first balun are arranged on the same wiring layer and coupled with each other, which greatly reduces the number of layers of the substrate and improves the overall integration.

[0327] In at least one embodiment, the first group of primary lines and the second group of primary lines are arranged on a first wiring layer of the substrate, and the first group of secondary lines and the second group of secondary lines are arranged on a second wiring layer of the substrate. In this embodiment, the primary part and the secondary part of the first balun are coupled vertically on the substrate.

[0328] In at least one embodiment, the first group of primary wires includes at least two primary wires, the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires, the second group of secondary wires includes at least two secondary wires;

[0329] One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

[0330] In at least one embodiment, further comprising:

[0331] A power supply terminal is arranged on the substrate;

[0332] The first chip further includes a first differential feeding terminal and a second differential feeding terminal, the first differential feeding terminal is connected to the power supply terminal through a third connection path, and the second differential feeding terminal is connected to the power supply terminal through a fourth connection path;

[0333] The first end of the primary part is connected to the first differential output end through a first connection path, and the second end of the primary part is connected to the second differential output end through a second connection path;

[0334] One end of the first group of primary lines is connected to the first differential output terminal through a first connection path, and one end of the second group of primary lines is connected to the second differential output terminal through a second connection path;

[0335] A transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the second connection path, or a transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines;

[0336] A transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first connection path, or a transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first group of primary lines or the second group of primary lines.

[0337] In at least one embodiment, the output terminal of the first differential transistor array is connected to a first feeding terminal, and the output terminal of the second differential transistor array is connected to a second feeding terminal.

[0338] In at least one embodiment, the output terminal of the first differential transistor array is connected to the first differential output terminal through a first series capacitor, and the output terminal of the second differential transistor array is connected to the second differential output terminal through a second series capacitor.

[0339] In at least one embodiment of the present application, a radio frequency front-end module is provided, comprising the radio frequency power amplifier described in any of the above embodiments or implementations.

[0340] In at least one embodiment of the present application, an electronic device is provided, comprising the RF front-end module described in any of the above embodiments or implementations.

[0341] The above is only a preferred implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present application. These improvements and substitutions should also be regarded as the scope of protection of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: include: substrate; A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal; A first balun, disposed on the same wiring layer of the substrate, comprising a primary part and a secondary part; The primary section includes a first set of primary wires and a second set of primary wires; The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines; A power supply terminal, arranged on the substrate, the first differential feeding terminal being connected to the power supply terminal, and the second differential feeding terminal being connected to the power supply terminal; The first group of primary wires includes at least two primary wires and the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires and the second group of secondary wires includes at least two secondary wires; One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

2. The radio frequency power amplifier according to claim 1, characterized in that: One end of the primary line in the first group of primary lines is connected to the first differential output terminal through a first group of bonding wires, one end of the primary line in the second group of primary lines is connected to the second differential output terminal through a second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through a third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through a fourth group of bonding wires; The fourth group of bonding wires is disposed between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is disposed between the second group of bonding wires and the fourth group of bonding wires.

3. The radio frequency power amplifier according to claim 1, characterized in that: One end of the primary line in the first group of primary lines is connected to the first differential output terminal through a first group of bonding wires, one end of the primary line in the second group of primary lines is connected to the second differential output terminal through a second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through a third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through a fourth group of bonding wires; The second differential feeding terminal is arranged between the first differential output terminal and the first differential feeding terminal, and the first differential feeding terminal is arranged between the second differential output terminal and the second differential feeding terminal.

4. The radio frequency power amplifier according to claim 1, characterized in that: Also includes a first inductor connected between the first differential feed terminal and the power supply terminal, and a second inductor connected between the second differential feed terminal and the power supply terminal; The first inductor includes a first portion of routing lines arranged on the same wiring layer as the first balun on the substrate, wherein a radio frequency signal transmission direction of at least a portion of the first portion of routing lines is opposite to a radio frequency signal transmission direction of the first group of primary lines, or a radio frequency signal transmission direction of at least a portion of the first portion of routing lines is opposite to a radio frequency signal transmission direction of the second group of primary lines; The second inductor includes a second portion of routing lines arranged on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least part of the second portion of routing lines is opposite to the RF signal transmission direction of the second group of primary lines, or the RF signal transmission direction of at least part of the second portion of routing lines is opposite to the RF signal transmission direction of the first group of primary lines.

5. The radio frequency power amplifier according to claim 4, characterized in that: The power supply terminal includes a first differential power supply terminal and a second differential power supply terminal, the first differential power supply terminal is arranged on a side of the first group of primary lines away from the second group of primary lines, and the second differential power supply terminal is arranged on a side of the second group of primary lines away from the first group of primary lines; The first part of the wiring includes a first sub-line adjacent to the first group of primary lines relative to other parts, and a radio frequency signal transmission direction of the first sub-line is opposite to a radio frequency signal transmission direction of the first group of primary lines; The second portion of the wiring includes a second sub-line that is adjacent to the second group of primary lines relative to other portions, and a radio frequency signal transmission direction of the second sub-line is opposite to a radio frequency signal transmission direction of the second group of primary lines.

6. The radio frequency power amplifier according to claim 4, characterized in that: The power supply end is arranged between the first group of primary lines and the second group of primary lines, the first part of the routing is arranged between the second group of primary lines and the second part of the routing, the RF signal transmission direction of at least part of the routing in the first part is opposite to the RF signal transmission direction of the second group of primary lines, the second part of the routing is arranged between the first group of primary lines and the first part of the routing, and the RF signal transmission direction of at least part of the routing in the second part is opposite to the RF signal transmission direction of the first group of primary lines.

7. The radio frequency power amplifier according to claim 4, characterized in that: An angle formed by a RF signal transmission direction of at least part of the first part of the routing and a RF signal transmission direction of the first group of primary lines is greater than 135 degrees, or an angle formed by a RF signal transmission direction of at least part of the first part of the routing and a RF signal transmission direction of the second group of primary lines is greater than 135 degrees; An angle formed by a RF signal transmission direction of at least part of the second portion of the routing and a RF signal transmission direction of the second group of primary lines is greater than 135 degrees, or an angle formed by a RF signal transmission direction of at least part of the second portion of the routing and a RF signal transmission direction of the first group of primary lines is greater than 135 degrees.

8. The radio frequency power amplifier according to claim 1, characterized in that: The first group of primary lines includes a first primary line and a second primary line, the first end of the first primary line is connected to the first differential output end, and the second end of the first primary line is grounded through a first through hole; the first end of the second primary line is connected to the first differential output end, and the second end of the second primary line is grounded through a second through hole; The second group of primary lines includes a third primary line and a fourth primary line, a first end of the third primary line is connected to the second differential output end, and a second end of the third primary line is grounded through a third through hole; a first end of the fourth primary line is connected to the second differential output end, and a second end of the fourth primary line is grounded through a fourth through hole; The first group of secondary lines includes a first secondary line, which is arranged between the first primary line and the second primary line and coupled with the first primary line and the second primary line respectively; the second group of secondary lines includes a third secondary line, which is arranged between the third primary line and the fourth primary line and coupled with the third primary line and the fourth primary line respectively; the first secondary line and the third secondary line are connected in series through the secondary connecting line.

9. The radio frequency power amplifier according to claim 8, characterized in that: The first end of the first secondary line is configured to be connected to the signal output terminal, the second end of the first secondary line is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be grounded; or, The first end of the first secondary line is configured to be grounded, the second end of the first secondary line is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the third secondary line, and the second end of the third secondary line is configured to be connected to the signal output end.

10. The radio frequency power amplifier according to claim 9, characterized in that: The second end of the third secondary line is grounded through a fifth through hole, and the third through hole, the fourth through hole and the fifth through hole are not located in a straight line.

11. The radio frequency power amplifier according to claim 1, characterized in that: The first group of primary lines includes a first primary line, a first end of the first primary line is connected to the first differential output end, and a second end of the first primary line is grounded through a first through hole; The second group of primary lines includes a third primary line, a first end of the third primary line is connected to the second differential output end, and a second end of the third primary line is grounded through a third through hole; The first group of secondary wires includes a first secondary wire and a second secondary wire, the first end of the first secondary wire is connected to the first end of the second secondary wire, the second end of the first secondary wire is grounded through a sixth through hole, and the second end of the second secondary wire is grounded through a seventh through hole; the second group of secondary wires includes a third secondary wire and a fourth secondary wire, the first end of the third secondary wire is connected to the first end of the fourth secondary wire, the second end of the third secondary wire is grounded through an eighth through hole, and the second end of the fourth secondary wire is grounded through a ninth through hole; The first primary line is disposed between the first secondary line and the second secondary line, and is coupled to the first secondary line and the second secondary line respectively. The third primary line is disposed between the third secondary line and the fourth secondary line, and is coupled to the third secondary line and the fourth secondary line respectively.

12. The radio frequency power amplifier according to claim 11, characterized in that: The first end of the first primary line is connected to the first differential output end through a first group of bonding wires, the first end of the third primary line is connected to the second differential output end through a second group of bonding wires, the first end of the first secondary line is connected to the first end of the second secondary line through a fifth group of bonding wires, and the first end of the third secondary line is connected to the first end of the fourth secondary line through a sixth group of bonding wires.

13. The radio frequency power amplifier according to claim 1, characterized in that: The first chip includes a first differential transistor and a second differential transistor; The first output terminal of the first differential transistor is connected to the first differential feed terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal; The second output terminal of the second differential transistor is connected to the second differential feed terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal.

14. The radio frequency power amplifier according to claim 13, characterized in that: The first output terminal of the first differential transistor is connected to the first differential output terminal through at least one passive element, and the second output terminal of the second differential transistor is connected to the second differential output terminal through at least one passive element.

15. The radio frequency power amplifier according to claim 14, characterized in that: The first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor.

16. The radio frequency power amplifier according to claim 1, characterized in that: Also includes a third inductor and a third capacitor; The first end of the first group of secondary lines is connected to the first end of the third inductor, the second end of the first group of secondary lines is connected to the first end of the secondary connecting line, the second end of the secondary connecting line is connected to the first end of the second group of secondary lines, the second end of the second group of secondary lines is configured to be grounded, the second end of the third inductor is connected to the first end of the third capacitor, and the second end of the third capacitor is configured to be grounded; The secondary connecting line, the third inductor and the third capacitor are configured to suppress harmonic signals of the radio frequency power amplifier.

17. The radio frequency power amplifier according to claim 1, characterized in that: The secondary part also includes a third group of secondary lines and a fourth group of secondary lines, the third group of secondary lines and the first group of secondary lines are connected in series, the fourth group of secondary lines and the second group of secondary lines are connected in series, and the third group of secondary lines and the fourth group of secondary lines are at least partially coupled.

18. The radio frequency power amplifier according to claim 1, characterized in that: The first group of secondary wires and the first group of primary wires extend in the same direction, and the second group of secondary wires and the second group of primary wires extend in the same direction.

19. The radio frequency power amplifier according to claim 1, characterized in that: The first group of secondary wires and the first group of primary wires extend along a first direction, the second group of secondary wires and the second group of primary wires extend along a second direction, and an angle formed by the first direction and the second direction is greater than or equal to 0 degrees and less than or equal to 60 degrees.

20. The radio frequency power amplifier according to claim 1 or 19, characterized in that: The RF power amplifier also includes a third chip, at least part of which is located on the side of a virtual straight line facing the first chip, and the virtual straight line is a line connecting the other end of the first group of primary lines configured as grounded and the other end of the second group of primary lines configured as grounded.

21. The radio frequency power amplifier according to claim 20, characterized in that: The third chip includes a radio frequency switch circuit, and the first ends of the first group of secondary lines or the first ends of the second group of secondary lines are connected to the radio frequency switch circuit in the third chip.

22. A radio frequency power amplifier, characterized in that: include: substrate; A first chip, arranged on the substrate, comprising a first differential transistor, a second differential transistor, a first differential output terminal, a second differential output terminal, a first differential feeding terminal and a second differential feeding terminal, wherein the first output terminal of the first differential transistor is connected to the first differential feeding terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, the second output terminal of the second differential transistor is connected to the second differential feeding terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor; A first balun, disposed on the substrate, comprising a primary part and a secondary part; The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the second group of primary wires is configured to be connected to the second differential output terminal, and the other end is configured to be grounded; The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, wherein the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines and extends in the same direction, and the second group of secondary lines is coupled with the second group of primary lines and extends in the same direction; A power supply terminal is arranged on the substrate, the first differential feeding terminal is connected to the power supply terminal, and the second differential feeding terminal is connected to the power supply terminal.

23. A radio frequency power amplifier, characterized in that: include: substrate; A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal; The first balun, consisting of the primary and secondary sections; The first end of the primary part is connected to the first differential output end through a first group of bonding wires, the second end of the primary part is connected to the second differential output end through a second group of bonding wires, the first differential feed end is connected to the power supply end through a third group of bonding wires, and the second differential feed end is connected to the power supply end through a fourth group of bonding wires; The fourth group of bonding wires is disposed between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is disposed between the second group of bonding wires and the fourth group of bonding wires.

24. The radio frequency power amplifier according to claim 23, characterized in that: The second differential feeding terminal is arranged between the first differential output terminal and the first differential feeding terminal, and the first differential feeding terminal is arranged between the second differential output terminal and the second differential feeding terminal.

25. The radio frequency power amplifier according to claim 23, characterized in that: The first balun is disposed on the substrate, or the first balun is disposed in the second chip.

26. A radio frequency power amplifier, characterized in that: include: A substrate is provided with a first differential power terminal and a second differential power terminal; A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal; A first balun, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end, and a second end of the primary part is connected to the second differential output end; a first inductor, one end of the first inductor being connected to the first differential power supply end, the other end of the first inductor being connected to the first differential feeding end, the first inductor comprising a first sub-trace, the primary part comprising a first primary trace, the first sub-trace and the first primary trace being arranged on the same wiring layer of the substrate and being arranged adjacent to each other, and a radio frequency signal transmission direction of the first sub-trace being opposite to a radio frequency signal transmission direction of the first primary trace; A second inductor, one end of the second inductor is connected to the second differential power supply end, the other end of the second inductor is connected to the second differential feeding end, the second inductor includes a second sub-route, the primary part includes a second primary route, the second sub-route and the second primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the second sub-route is opposite to the RF signal transmission direction of the second primary route.

27. The radio frequency power amplifier according to claim 26, characterized in that: An angle formed by the RF signal transmission direction of the first sub-route and the RF signal transmission direction of the first primary route is greater than 160 degrees, and an angle formed by the RF signal transmission direction of the second sub-route and the RF signal transmission direction of the second primary route is greater than 160 degrees.

28. A radio frequency power amplifier, characterized in that: include: A substrate is provided with a first differential power terminal and a second differential power terminal; A first chip, disposed on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feeding terminal, and a second differential feeding terminal; A first balun, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first differential output end through a first connection path, and a second end of the primary part is connected to the second differential output end through a second connection path; the primary part comprises a first group of primary lines and a second group of primary lines; A power supply terminal, arranged on the substrate, the first differential feed terminal being connected to the power supply terminal through a third connection path, and the second differential feed terminal being connected to the power supply terminal through a fourth connection path; A transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the second connection path, or a transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines; A transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first connection path, or a transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first group of primary lines or the second group of primary lines.

29. A radio frequency power amplifier, characterized in that: include: substrate; A first chip, disposed on the substrate, comprising a first output terminal; A first transformer, disposed on the substrate, comprising a primary part and a secondary part, wherein a first end of the primary part is connected to the first output end, and a second end of the primary part is configured to be grounded or connected to a power supply end; A first inductor is connected in a feeding path of the RF power amplifier, wherein the first inductor includes a first sub-route, the primary part includes a first primary route, the first sub-route and the first primary route are arranged on the same wiring layer of the substrate and are arranged adjacent to each other, and the RF signal transmission direction of the first sub-route is opposite to the RF signal transmission direction of the first primary route.

30. The radio frequency power amplifier according to claim 29, characterized in that: The substrate also includes a power supply terminal; The first chip further includes a first feeding terminal, one end of the first inductor is connected to the power supply terminal, and the other end of the first inductor is connected to the first feeding terminal.

31. The radio frequency power amplifier according to claim 29, characterized in that: An angle formed by a radio frequency signal transmission direction of the first sub-route and a radio frequency signal transmission direction of the first primary route is greater than 135 degrees.

32. The radio frequency power amplifier according to claim 29, characterized in that: The primary part and the secondary part extend in the same direction.

33. The radio frequency power amplifier according to claim 29, characterized in that: The first chip includes a first amplifying transistor; The third output terminal of the first amplifying transistor is connected to the first feeding terminal of the first chip, and the third output terminal of the first amplifying transistor is connected to the first output terminal.

34. A radio frequency power amplifier, characterized in that: include: substrate; A first chip, disposed on the substrate, comprising a first differential output terminal and a second differential output terminal; The first balun, consisting of the primary and secondary sections; The primary part includes a first group of primary wires and a second group of primary wires, one end of the first group of primary wires is configured to be connected to the first differential output terminal, and the other end is configured to be grounded, and a virtual line formed by one end of the first group of primary wires and the other end of the first group of primary wires extends along a first direction; One end of the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded, and a virtual line formed by one end of the second group of primary lines and the other end of the second group of primary lines extends along a second direction; The secondary part includes a first group of secondary lines and a second group of secondary lines, the first group of secondary lines and the second group of secondary lines are connected in series, the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines; A virtual line formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along a first direction, and a virtual line formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along a second direction.

35. The radio frequency power amplifier according to claim 34, characterized in that: The first direction and the second direction are different directions.

36. The radio frequency power amplifier according to claim 35, characterized in that: The first direction is perpendicular to the second direction.

37. The radio frequency power amplifier according to claim 34, characterized in that: The first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along a third direction, the second differential transistor array is arranged along a fourth direction, and the third direction and the fourth direction are different directions; the output end of the first differential transistor array is connected to the first differential output end, and the output end of the second differential transistor array is connected to the second differential output end.

38. The radio frequency power amplifier according to claim 34, characterized in that: The first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along the second direction, and the second differential transistor array is arranged along the first direction; the output end of the first differential transistor array is connected to the first differential output end, and the output end of the second differential transistor array is connected to the second differential output end.

39. The radio frequency power amplifier according to claim 38, characterized in that: One end of the first group of primary lines and one end of the first group of secondary lines are arranged near the midpoint of the first differential transistor array in the second direction, and one end of the second group of primary lines and one end of the second group of secondary lines are arranged near the midpoint of the second differential transistor array in the first direction.

40. The radio frequency power amplifier according to claim 34, characterized in that: The first group of primary wires and the first group of secondary wires extend in a first direction, and the second group of primary wires and the second group of secondary wires extend in a second direction.

41. The radio frequency power amplifier according to claim 34, characterized in that: Also included is a secondary connecting line that connects the first group of secondary lines and the second group of secondary lines in series.

42. The radio frequency power amplifier according to claim 41, characterized in that: The first balun is arranged on the substrate, and the first chip is arranged on the substrate in an inverted manner.

43. The radio frequency power amplifier according to claim 42, characterized in that: The secondary connection lines are arranged on the substrate, and the longitudinal projection of the first chip on the substrate at least covers a portion of the secondary connection lines.

44. The radio frequency power amplifier according to claim 41, characterized in that: The primary part, the first group of secondary lines and the second group of secondary lines are arranged on the substrate, and the secondary connection lines are at least partially arranged on the first chip.

45. The radio frequency power amplifier according to claim 44, characterized in that: One end of the first group of primary wires is connected to the first differential output terminal through a first group of bonding wires, and one end of the second group of primary wires is connected to the second differential output terminal through a second group of bonding wires; One end of the first group of secondary wires is connected to the first end of the secondary connection wire in the first chip through the seventh group of bonding wires, and one end of the second group of secondary wires is connected to the second end of the secondary connection wire in the first chip through the eighth group of bonding wires.

46. ​​The radio frequency power amplifier according to claim 45, characterized in that: The first group of bond wires and the seventh group of bond wires are at least partially coupled, and the second group of bond wires and the eighth group of bond wires are at least partially coupled.

47. The radio frequency power amplifier according to claim 34, characterized in that: The first chip also includes a fourth capacitor, one end of the first group of secondary lines is connected to the first end of the fourth capacitor, the other end of the first group of secondary lines is configured to be grounded, one end of the second group of secondary lines is connected to the second end of the fourth capacitor, and the other end of the second group of secondary lines is configured to be connected to the signal output end.

48. The radio frequency power amplifier according to claim 34, characterized in that: The first group of secondary wires and the first group of primary wires are disposed on a same wiring layer of the substrate, and the second group of secondary wires and the second group of primary wires are disposed on a same wiring layer of the substrate.

49. The radio frequency power amplifier according to claim 34, characterized in that: The first group of primary lines and the second group of primary lines are disposed on a first wiring layer of the substrate, and the first group of secondary lines and the second group of secondary lines are disposed on a second wiring layer of the substrate.

50. The radio frequency power amplifier according to claim 34, characterized in that: The first group of primary wires includes at least two primary wires and the second group of primary wires includes at least two primary wires, and / or the first group of secondary wires includes at least two secondary wires and the second group of secondary wires includes at least two secondary wires; One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

51. The radio frequency power amplifier according to claim 34, characterized in that: Also includes: A power supply terminal is arranged on the substrate; The first chip further includes a first differential feeding terminal and a second differential feeding terminal, the first differential feeding terminal is connected to the power supply terminal through a third connection path, and the second differential feeding terminal is connected to the power supply terminal through a fourth connection path; One end of the first group of primary lines is connected to the first differential output terminal through a first connection path, and one end of the second group of primary lines is connected to the second differential output terminal through a second connection path; A transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the second connection path, or a transmission direction of at least part of the radio frequency signals in the third connection path is opposite to a transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines; A transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first connection path, or a transmission direction of at least part of the RF signal in the fourth connection path is opposite to a transmission direction of at least part of the RF signal in the first group of primary lines or the second group of primary lines.

52. The radio frequency power amplifier according to claim 51, characterized in that: The first chip further includes a first differential transistor array and a second differential transistor array, the output end of the first differential transistor array is connected to the first feed end, and the output end of the second differential transistor array is connected to the second feed end; The output terminal of the first differential transistor array is connected to the first differential output terminal through a first series capacitor, and the output terminal of the second differential transistor array is connected to the second differential output terminal through a second series capacitor.

53. A radio frequency front-end module, characterized in that: Comprising a radio frequency power amplifier as described in any one of claims 1-52.

54. An electronic device, characterized in that: Comprising a radio frequency front-end module as described in claim 53.

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