Vapor chamber structure

Abstract

The utility model provides a vapor chamber structure which comprises a shell which comprises an upper shell and a lower shell, a sealed heat conduction space is formed in the shell, and the lower shell is divided into a heat source area and a surrounding area; the metal columns are connected with the upper shell and the lower shell and comprise first metal columns arranged in the surrounding area and second metal columns arranged in the heat source area; the auxiliary electroplated layer is arranged on the side wall of the first metal column, and a first hole is formed in the auxiliary electroplated layer; the main electroplated layer is arranged on the side wall of the second metal column, a second hole is formed in the main electroplated layer, and the average hole diameter of the second hole is smaller than that of the first hole; and the heat conduction fluid is filled in the heat conduction space. According to the vapor chamber structure, the heat conduction capacity in the vertical direction is improved, and a heat dissipation path is converted from two dimensions to three dimensions, so that the heat dissipation effect is further improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a temperature equalizing plate structure. Background Art

[0002] As the power and computing power of electronic products increase, the heating problem becomes more serious. One solution is to install a vapor chamber in electronic products. A vapor chamber is also called a heat conduction plate. Its function and working principle are similar to those of a heat pipe. It uses the evaporation and condensation cycle of the heat-conducting fluid enclosed in the plate-shaped cavity to achieve rapid temperature uniformity, thereby achieving rapid heat conduction and heat diffusion.

[0003] refer to Figure 1 The conventional temperature equalization board is provided with a high heat-conducting shell 10, which may be composed of an upper shell 101 and a lower shell 102, a sealed cavity 11 is formed between the upper shell 101 and the lower shell 102, and a plurality of copper pillars 12 may be connected between the upper shell 101 and the lower shell 102, a capillary structure 13 may be provided on the inner surface of the shell 10, and a heat-conducting fluid may be filled inside the sealed cavity 11 (not shown in the figure). Figure 1 The vapor chamber shown is capable of dissipating heat energy laterally (horizontally) to the outside of the heat source in a two-dimensional path.

[0004] The advantage of the temperature plate is that it has strong lateral heat conduction capacity, which can take away and dissipate heat faster than ordinary copper sheets. However, the industry still hopes that the effect of the temperature plate can be further improved so that it can be applied to more high-performance products. Utility Model Content

[0005] The purpose of the present application is to provide a temperature homogenizing plate structure, so that the heat dissipation capacity of the temperature homogenizing plate structure is further improved.

[0006] A temperature equalizing plate structure proposed in the present application includes: a shell, including an upper shell and a lower shell, forming a sealed heat-conducting space inside, and the lower shell is divided into a heat source area and a surrounding area; a plurality of metal columns connecting the upper shell and the lower shell, including a first metal column arranged in the surrounding area and a second metal column arranged in the heat source area; an auxiliary electroplating layer, arranged on the side wall of the first metal column, having a first pore inside; a main electroplating layer, arranged on the side wall of the second metal column, having a second pore inside, and the average pore size of the second pore is smaller than that of the first pore; a heat-conducting fluid, filling the heat-conducting space.

[0007] In some optional embodiments, the distribution density of the second pores is greater than that of the first pores.

[0008] In some optional embodiments, the lattice in the main electroplating layer is larger than the lattice in the auxiliary electroplating layer.

[0009] In some optional embodiments, the main electroplating layer and the auxiliary electroplating layer are both capillary structures, wherein the main electroplating layer is in a fin shape, and the auxiliary electroplating layer is in a dendrite shape.

[0010] In some optional embodiments, the main electroplating layer contacts the upper shell.

[0011] In some optional embodiments, the top surface of the main electroplating layer is flush with the height of the second metal pillar.

[0012] In some optional embodiments, the heat transfer fluid fills the first pores and the second pores.

[0013] In some optional embodiments, the auxiliary electroplating layer surrounds the main electroplating layer in a top view.

[0014] In some optional embodiments, the main electroplating layer surrounds the second metal column.

[0015] In some optional embodiments, the outer wall of the heat source area of ​​the lower shell contacts the heat source.

[0016] In some optional embodiments, the first metal pillar is at least partially exposed outside the auxiliary electroplating layer.

[0017] In some optional embodiments, the portion where the main electroplating layer is connected to the auxiliary electroplating layer in the cross-sectional structure is a curved surface.

[0018] In some optional embodiments, the density of the main electroplating layer is greater than that of the auxiliary electroplating layer.

[0019] In some optional embodiments, the main electroplating layer is higher than the auxiliary electroplating layer.

[0020] In some optional embodiments, upper and lower ends of the main electroplating layer contact the upper shell and the lower shell respectively.

[0021] In some optional embodiments, the heat transfer fluid does not fill the heat transfer space.

[0022] As described above, in order to further improve the heat dissipation capacity of the temperature equalizer structure, the present application proposes a temperature equalizer structure, which divides the lower shell into a heat source area and a surrounding area, and sets an auxiliary electroplating layer on the side wall of the metal column in the surrounding area, and sets a main electroplating layer on the side wall of the metal column in the heat source area, so that the average pore size of the pores inside the main electroplating layer is smaller than the average pore size of the pores inside the auxiliary electroplating layer, that is, the pores inside the main electroplating layer are smaller and denser, so that the capillary capacity of the main electroplating layer is more excellent and the heat dissipation capacity is better. When the temperature equalizer structure of the present application is used for heat dissipation, it helps the heat conduction when the heat-conducting fluid is vaporized, and the main electroplating layer is set on the side wall of the metal column, which can cooperate with the metal column to effectively improve the thermal conductivity in the vertical direction, and transform the heat dissipation path of the temperature equalizer structure from two-dimensional to three-dimensional, and does not affect the thermal conductivity of the temperature equalizer structure in the two-dimensional lateral direction, so that it has both lateral and vertical thermal conductivity, so that the heat dissipation efficiency of the temperature equalizer structure is further improved.

[0023] In some optional embodiments, a secondary electroplating can be performed on the inner surface of the uniform temperature plate structure that has been electroplated for the first time, and the secondary electroplating is used to form a main electroplating layer (while the auxiliary electroplating layer is only electroplated once). In this way, the main electroplating layer and the auxiliary electroplating layer are both capillary structures formed by the electroplating process of electrochemical deposition, but the two are different in structural morphology. Among them, the auxiliary electroplating layer is roughly dendritic, and the dendritic structure in the main electroplating layer will become larger and tighter and generally present a fin shape. The secondary crystal arms in the fin-shaped main electroplating layer become longer and larger, and the pores formed between the secondary crystal arms become smaller, denser and more numerous, so that the capillary capacity of the main electroplating layer is more excellent, it is easier to conduct heat, and the heat dissipation effect is better. In addition, the main electroplating layer is arranged on the metal column in the heat source area and distributed in the vertical direction, which helps to improve the heat conduction capacity of the uniform temperature plate structure in the vertical direction.

[0024] ASE Confidential / Security-B BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0026] Figure 1 It is a partial cross-sectional view of an existing temperature homogenizing plate;

[0027] Figure 2 and Figure 3 They are respectively a schematic diagram of a top view and a schematic diagram of a longitudinal cross-section structure of an embodiment of a temperature homogenizing plate structure according to the present application;

[0028] Figure 4 is based on Figure 3 A schematic diagram of a partially enlarged structure of the structure shown;

[0029] Figure 5 is a schematic diagram of an actual product according to an embodiment of the temperature homogenizing plate structure of the present application;

[0030] Figure 6 is a schematic diagram of the application effect of an embodiment of the temperature homogenizing plate structure according to the present application;

[0031] Figure 7 It is a schematic diagram of the manufacturing steps of an embodiment of a temperature vapor chamber structure according to the present application.

[0032] Description of reference numerals / symbols:

[0033] 10-shell; 101-upper shell; 102-lower shell; 11-sealed cavity; 12-copper column; 13-capillary structure; 20-shell; 201-upper shell; 202-lower shell; 203-heat conduction space; 204-heat source area; 205-surrounding area; 21-metal column; 211-first metal column; 212-second metal column; 22-auxiliary electroplating layer; 23-main electroplating layer; 231-curved surface; 24-heat conduction fluid; 25-first electroplating layer; 26-second electroplating layer. DETAILED DESCRIPTION

[0034] The specific implementation methods of the present application are described below in conjunction with the accompanying drawings and embodiments. Through the contents recorded in this specification, those skilled in the art can easily understand the technical problems solved by the present application and the technical effects produced. It is understood that the specific embodiments described herein are only used to explain the relevant inventions and creations, rather than to limit the inventions and creations. In addition, for the convenience of description, only the parts related to the relevant inventions and creations are shown in the accompanying drawings.

[0035] It should be readily understood that the meanings of “on,” “over,” and “over” in this application should be interpreted in the broadest manner, so that “on” not only means “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween.

[0036] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component illustrated in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0037] The term "layer" as used herein refers to a material portion including an area with a certain thickness. The layer can extend over the entire lower or upper structure, or can have a degree less than the range of the lower or upper structure. In addition, the layer can be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top surface and the bottom surface of the continuous structure or between any pair of horizontal planes therebetween. The layer can extend horizontally, vertically and / or along a tapered surface. A substrate can be a layer, one or more layers can be included therein, and / or one or more layers can be present thereon, above and / or below. A layer can include multiple layers. For example, a semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0038] The term "substrate" as used herein refers to a material on which subsequent material layers are added. The substrate itself may be patterned. The material added on top of the substrate may be patterned or may remain unpatterned. In addition, the substrate may include a variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate may be made of a non-conductive material, such as glass, plastic, or sapphire wafer, etc. Further alternatively, the substrate may have a semiconductor device or circuit formed therein.

[0039] As used herein, the terms "substantially," "substantial," "approximately," and "about" are used to indicate and explain minor variations. For example, when used in conjunction with a numerical value, the above terms may refer to a variation range of less than or equal to ±10% of the corresponding numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another example, the thickness of a film or layer is "substantially uniform" and may refer to a standard deviation of less than or equal to ±10% of the average thickness of the film or layer, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term "substantially coplanar" may refer to two surfaces that are within tens of microns along the same plane, such as within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm along the same plane. If, for example, two components overlap or overlap within a few microns, such as within 200 μm, within 150 μm, within 100 μm, within 50 μm, within 40 μm, within 30 μm, within 20 μm, within 10 μm, or within 1 μm, then the two components may be considered to be "substantially aligned". If the angle between the two surfaces or components is, for example, 90°±10°, such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1°, or ±0.05°, then the two surfaces or components may be considered to be "substantially perpendicular". When used in conjunction with an event or situation, the terms "substantially", "substantial", "approximately", and "about" may refer to situations where the event or situation occurs exactly as well as situations where the event or situation occurs very approximately.

[0040] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of the present application, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed in the present application. At the same time, the terms such as "on", "first", "second" and "one" quoted in this specification are only for the convenience of narration, and are not used to limit the scope of the implementation of the present application. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present application without substantially changing the technical content.

[0041] It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the front view direction, the transverse section may be a section corresponding to the right view direction, and the horizontal section may be a section corresponding to the top view direction.

[0042] In addition, the embodiments and features in the embodiments of the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0043] refer to Figures 2 to 4 , Figure 2 and Figure 3 They are respectively a schematic diagram of a top view and a schematic diagram of a longitudinal cross-section structure of an embodiment of a temperature homogenizing plate structure according to the present application, Figure 4 is based on Figure 3 A schematic diagram of a partially enlarged structure of the structure shown.

[0044] like Figure 2-4 As shown, the temperature homogenizing plate structure of the embodiment of the present application includes:

[0045] The housing 20 includes an upper housing 201 and a lower housing 202, and a sealed heat-conducting space 203 is formed inside. The lower housing area 202 is divided into a heat source area 204 and a surrounding area 205;

[0046] A plurality of metal pillars 21 connecting the upper shell 201 and the lower shell 202, including a first metal pillar 211 disposed in the peripheral area 205 and a second metal pillar 212 disposed in the heat source area 204;

[0047] The auxiliary electroplating layer 22 is disposed on the side wall of the first metal column 211 and has a first pore (not shown in the figure) inside;

[0048] The main electroplating layer 23 is disposed on the side wall of the second metal column 212 and has a second pore (not shown in the figure) inside, and the average pore diameter of the second pore is smaller than that of the first pore;

[0049] The heat transfer fluid 24 is filled in the heat transfer space 203 .

[0050] Here, the material of the housing 20 may be a high thermal conductivity material, such as metal, including but not limited to copper. The edges of the upper housing 201 and the lower housing 202 are combined to form a sealed internal cavity as a thermal conduction space 203. The combination method of the edges of the upper housing 201 and the lower housing 202 includes but is not limited to pressing, welding or other methods.

[0051] Here, a plurality of metal pillars 21 are located in the heat conduction space 203. The upper and lower ends of the metal pillars 21 abut against the upper shell 201 and the lower shell 202 respectively. The metal pillars 21 can play a role of support and reinforcement and a role of vertical heat conduction. The material of the metal pillars 21 can be a high thermal conductivity material, such as metal, including but not limited to copper. Exemplarily, the metal pillars 21 can be copper pillars.

[0052] Here, the heat transfer fluid 24 is filled in the heat transfer space 203 to conduct heat. The heat transfer fluid 24 can be a substance that can be in liquid state at normal temperature and can be vaporized into gas state after absorbing heat. For example, the heat transfer fluid 24 can be pure water.

[0053] Here, the auxiliary electroplating layer 22 and the main electroplating layer 23 can be capillary structures formed by electroplating, each having pores inside, which can provide capillary capacity, help the heat transfer fluid 24 to vaporize into a gaseous state, and help the heat transfer fluid 24 that is recondensed into a liquid state to flow back, so as to improve the heat dissipation capacity. The difference is that, compared with the auxiliary electroplating layer 22, the average pore size of the second pores inside the main electroplating layer 23 is smaller, and the capillary capacity provided is stronger, thereby providing better heat dissipation capacity.

[0054] The principle of the temperature equalization plate structure of the present application is: when working, the heat-conducting fluid 24 in the heat source area 204 absorbs heat and evaporates into a gaseous state, and then releases heat in the surrounding area 205 and returns to a liquid state, and is guided back to the heat source area 204 through the capillary structure and gravity. In this way, the heat of the heat source area 204 is quickly transferred to the surrounding area 205, achieving the effect of rapid heat dissipation. Among them, the capillary structure is a heterogeneous structure, including an auxiliary electroplating layer 22 arranged on the side wall of the first metal column 211 in the surrounding area 205, and a main electroplating layer 23 arranged on the side wall of the second metal column 212 in the heat source area 204. Since the average pore size of the second pores in the main electroplating layer 23 is smaller than the average pore size of the first pores in the auxiliary electroplating layer 22, that is, the second pores in the main electroplating layer 23 are smaller and denser, so that the capillary capacity of the main electroplating layer 23 is more excellent and the thermal conductivity is better. The present application integrates a heterogeneous structure (i.e., a capillary structure) in an area where heat sources are concentrated. When used for heat dissipation, it helps to conduct heat when the heat-conducting fluid 24 vaporizes. In addition, the main electroplating layer 23 is arranged on the side wall of the second metal column 212, which can cooperate with the second metal column 212 to effectively increase the thermal conductivity in the vertical direction, and transform the heat dissipation path of the temperature-averaging plate structure from two-dimensional to three-dimensional, thereby having both lateral and vertical thermal conductivity, and the lateral thermal conductivity is not affected, thereby making the overall heat dissipation efficiency of the temperature-averaging plate structure higher, and the heat dissipation effect is further improved.

[0055] In some optional embodiments, the inner surface of the temperature equalizer structure that has been electroplated for the first time can be electroplated for the second time, and the main electroplating layer 23 is formed by the secondary electroplating (while the auxiliary electroplating layer 22 is electroplated only once). In this way, the main electroplating layer 23 and the auxiliary electroplating layer 22 are both capillary structures formed by the electroplating process of electrochemical deposition, but they are different in structural morphology, wherein the auxiliary electroplating layer 22 is roughly dendritic, and the dendritic structure in the main electroplating layer 23 will become larger and more compact and generally present a fin shape. The fin shape can be a fan-shaped structure, which has the characteristics of larger and denser particles, smaller pores, and higher height.

[0056] The secondary crystal arms in the dendrite-like auxiliary electroplating layer 22 are shorter, forming a local micro-convex shape at the trunk (primary crystal arm), and the pores (first pores) generated between these shorter secondary crystal arms are also larger and sparser. When the number of miniaturized pores is insufficient, the capillary capacity will be limited, and when applied to heat dissipation, its heat dissipation effect is limited. That is, the auxiliary electroplating layer 22 formed by the primary electroplating cannot effectively generate sufficient pores required for the capillary structure, and the heat dissipation effect is limited.

[0057] The secondary crystal arms in the fin-shaped main electroplating layer 23 become longer (relative to the auxiliary electroplating layer 22), and the pores (second pores) formed between the secondary crystal arms become smaller, denser and more numerous. The pores with smaller pore sizes and more numbers can provide more excellent capillary capacity, which is conducive to the heat conduction when the liquid vaporizes, that is, it is easier to conduct heat and has a better heat dissipation effect. In addition, the main electroplating layer 23 is distributed in the vertical direction along the second metal column 212 of the heat source area 204, which helps to improve the heat conduction capacity in the vertical direction. A large number of pores can be formed between these sufficiently long secondary crystal arms. These miniaturized pores can provide excellent capillary capacity. When used for heat dissipation, they help the heat conduction when the liquid vaporizes, thereby improving the heat dissipation effect.

[0058] In some optional embodiments, the distribution density of the second pores is greater than that of the first pores, where the distribution density refers to the number per unit volume. In other words, the number of the second pores per unit volume (in a space of the same size) is greater than that of the first pores. The higher the density of the pores, the stronger the capillary capacity.

[0059] In some optional embodiments, the lattice in the main electroplating layer 23 is larger than the lattice in the auxiliary electroplating layer 22. In the capillary structure formed by electroplating, a primary crystal arm (equivalent to a tree trunk) will be formed, and multiple secondary crystal arms (equivalent to branches) will be formed on the primary crystal arm, where each secondary crystal arm can be regarded as a lattice. The auxiliary electroplating layer 22 can be formed by electroplating once, and its secondary crystal arm length is limited. The main electroplating layer 23 can be formed by secondary electroplating, and its secondary crystal arm is relatively longer, in other words, its lattice is larger. It is easy to understand that the larger the lattice and the longer the secondary crystal arm, the more pores will be formed between each other, the smaller the pore size will be, and the stronger the capillary ability will be.

[0060] In some optional embodiments, the upper end of the main electroplating layer 23 may contact the upper shell 201. Furthermore, the lower end of the main electroplating layer 23 may contact the lower shell 202. By making the upper and lower ends of the main electroplating layer 23 contact the upper shell 201 and the lower shell 202 respectively, the thermal conductivity in the vertical direction can be improved, and the heat of the lower shell 202 (such as its heat source area 204) can be better transferred to the upper shell 201, thereby enhancing the heat dissipation effect.

[0061] In some optional implementations, the top surface of the main electroplating layer 23 is flush with the height of the second metal pillar 212 , so as to better bond with the upper housing 201 .

[0062] In some optional implementations, the heat-conducting fluid 24 fills (can fill up) the first pore and the second pore, thereby avoiding waste of pores and improving heat dissipation capacity.

[0063] In some optional embodiments, the heat-conducting fluid 24 does not fill up the heat-conducting space 203. The heat-conducting fluid 24 will undergo a phase change (conversion between liquid and gas) during operation, and the volume occupied will also change, so that the heat-conducting fluid 24 does not fill up the heat-conducting space 203 when it is in a liquid state, which can ensure that the heat-conducting fluid 24 can be better vaporized from a liquid state to a gas state, thereby ensuring the heat dissipation capacity.

[0064] In some optional embodiments, in a top view, the heat source area 204 may be located in the center, and the peripheral area 205 may be located around the heat source area 204 . Accordingly, the auxiliary electroplating layer 22 located in the peripheral area 205 may surround the main electroplating layer 23 located in the heat source area 204 .

[0065] In some optional implementations, in a top view, the main electroplating layer 23 fills the heat source area 204, and the main electroplating layer 23 surrounds the second metal pillar 212 in the heat source area 204. This helps to improve the heat dissipation capability.

[0066] In some optional embodiments, the outer wall of the heat source area 204 of the lower housing 202 contacts the heat source. Here, the heat source can be various electronic components: active components, such as various chips and packaging structures, or various passive components, such as resistors, inductors, capacitors, etc. The heat generated by the heat source when working can be transferred to the heat absorbing plate structure through the lower housing 202, and the heat dissipation capacity of the heat absorbing plate structure in the horizontal direction (lateral) and the vertical direction (vertical) can be used to better dissipate heat.

[0067] In some optional embodiments, the first metal pillar 211 may be at least partially exposed outside the auxiliary plating layer 22. For example, the height of the auxiliary plating layer 22 may be lower than that of the first metal pillar 211, so that the upper end of the first metal pillar 211 may be exposed from the auxiliary plating layer 22.

[0068] In some optional embodiments, the height of the main electroplating layer 23 is higher than the auxiliary electroplating layer 22. For example, the height of the main electroplating layer 23 can be the same as the second metal column 212 and the first metal column 211, while the height of the auxiliary electroplating layer 22 can be lower than the first metal column 211. In other words, the main electroplating layer 23 can also have a height difference relative to the auxiliary electroplating layer 22 in addition to the difference in shape (fin-shaped vs. dendritic) described above. By forming a main electroplating layer 23 with high thickness and high permeability, the heat conduction capacity of the temperature equalizing plate structure in the vertical direction can be effectively improved.

[0069] In some optional embodiments, the portion where the main electroplating layer 23 connects to the auxiliary electroplating layer 22 in the cross-sectional structure is a curved surface 231. During the electroplating process, the main electroplating layer 23 is formed by secondary electroplating and has a higher height, while the auxiliary electroplating layer 22 is formed by primary electroplating and has a lower height. The portion where the two are combined changes gradually, roughly forming a curved surface 231.

[0070] In some optional embodiments, the density of the main plating layer 23 is greater than that of the auxiliary plating layer 22. This is because the main plating layer 23 is formed by secondary plating, while the auxiliary plating layer 22 is formed by primary plating, and the main plating layer 23 contains more substances per unit volume.

[0071] Next, refer to Figure 5 , Figure 5 FIG. 1 is a schematic diagram of an actual product according to an embodiment of the temperature homogenizing plate structure of the present application. Figure 5 It can be seen from the actual product schematic diagram that the capillary structure of the central heat source area 204 is a main electroplating layer 23 that is roughly fin-shaped, and the capillary structure of the edge surrounding area 205 is an auxiliary electroplating layer 22 that is roughly tree-shaped. The two are quite different in shape, and there is a dividing line at the junction between the two.

[0072] Next, refer to Figure 6 , Figure 6 It is a schematic diagram of the application effect of an embodiment of the temperature homogenizing plate structure according to the present application. Figure 6 (a) shows the temperature distribution diagram on the electronic product when the traditional heat spreader structure is used for heat dissipation on the electronic product; Figure 6 (b) shows the temperature distribution diagram on the electronic product when the heat spreader structure of the embodiment of the present application (which has substantially the same volume as the traditional heat spreader structure) is used on the same electronic product for heat dissipation. It can be seen that Figure 6 In (b) on the right, the area of ​​the highest temperature region is significantly reduced, and the highest temperature is significantly reduced. Experimental verification shows that the highest temperature can be reduced by more than 5°C, for example, from 110°C to 105°C. Figure 6Judging from the simulation results shown, the vertical thermal conductivity of the temperature equalizer structure of the present application is effectively enhanced in places where heat sources are concentrated, which can significantly reduce the maximum temperature of electronic products, and there is no obvious change in the lateral results. It can be seen that the temperature equalizer structure of the present application has both vertical and lateral thermal conduction capabilities, and has better heat dissipation capacity than traditional temperature equalizer structures, and can be used for electronic products with higher power and higher computing power.

[0073] In addition, the applicant also compared the present application with a variety of traditional temperature equalizer structures. The comparison results showed that the temperature equalizer structure of the present application has the lowest thermal resistance and the strongest heat dissipation capacity, especially when the power is about 300W, the vertical thermal resistance performance is the best. This means that the temperature equalizer structure of the present application with a heterogeneous structure has excellent vertical and lateral heat conduction capabilities.

[0074] As mentioned above, this application proposes a temperature-averaging plate structure. By designing a heterogeneous structure electroplating layer and increasing the capillary capacity of the main electroplating layer, the heat conduction capacity in the vertical direction can be effectively improved, thereby further improving the overall heat dissipation efficiency. This application supports the range of customized heterogeneous structures to match the size of the heat source. This application also supports higher-power electronic products, further improving the performance of electronic products.

[0075] For example, the present application may be applicable to HFCBGA (Flip Chip Array Ball Array) products, the package size of which may be, for example, 11x11x3.8 mm. 3 The internal chip size can be, for example, 9.3x6.9x0.78 mm 3 The carrier substrate can be multi-layer (for example, 6 layers), and the thickness of the carrier substrate can be, for example, about 0.6mm-0.7mm. In addition, the power of the product can be about 560W, and the operating temperature can be about 55°C.

[0076] Next, refer to Figure 7 , Figure 7 It is a schematic diagram of the manufacturing steps of an embodiment of a temperature vapor chamber structure according to the present application. Figure 7 The drawings of each step in the process include a top view and a corresponding cross-sectional view.

[0077] like Figure 7 As shown, the steps of manufacturing the temperature vapor chamber structure of the embodiment of the present application may include:

[0078] Step (1): Provide a lower shell 202 , on which a plurality of metal pillars 21 may be disposed.

[0079] Step (2): In this step, the first electroplating is performed in the heat source area 204 of the lower shell 202 to form a first electroplating layer 25; here, the heat source area 204 can be located in the center of the lower shell 202, and other surrounding areas can be defined as the surrounding area 205; the metal column 21 located in the surrounding area 205 can be defined as a first metal column 211, and the metal column 21 located in the heat source area 204 can be defined as a second metal column 212; optionally, when the first electroplating is performed in this step, the surrounding area 205 can be covered and protected with insulating tape to prevent the surrounding area 205 from being electroplated, and the insulating tape can be removed after the first electroplating is completed.

[0080] Step (3): In this step, the first electroplating layer 25 formed on the top of the metal column 21 can be removed (grinded flat) through a grinding process, so that the first electroplating layer 25 is at the same height as the metal column 21.

[0081] Step (4): In this step, a second electroplating can be performed on the lower shell 202 to form a second electroplating layer 26; here, the second electroplating can be full-surface electroplating, not only electroplating the heat source area 204, but also electroplating the surrounding area 205; wherein, the heat source area 204 is electroplated twice to form a main electroplating layer 23, and the surrounding area 205 is electroplated only twice to form an auxiliary electroplating layer 22.

[0082] Step (5): In this step, the first electroplating layer 25 formed on the top of the metal column 21 can be removed (grinded flat) through a grinding process, so that the second electroplating layer 25 is at the same height as the metal column 21; that is, the main electroplating layer 23 is at the same height as the metal column 21.

[0083] Optionally, after the grinding process, a heat treatment (such as annealing) may be further performed to improve the performance of the formed main electroplating layer 23 and the auxiliary electroplating layer 22 .

[0084] Step (6): In this step, an upper shell 201 can be set on the top, so that the upper shell 201 and the lower shell 202 are combined to form a shell 20, and a heat-conducting space 203 is formed inside the shell 20. The metal column 21, the main electroplating layer 23 and the auxiliary electroplating layer 22 are all located in the heat-conducting space 203.

[0085] Finally, the heat transfer fluid 24 may be poured into the heat transfer space 203 (see Figure 3 ), and close the heat conduction space 203; thus, a temperature equalizing plate structure is obtained.

[0086] Although the present application has been described and illustrated with reference to the specific embodiments of the present application, these descriptions and illustrations do not limit the present application. It is clearly understood by those skilled in the art that various changes can be made, and equivalent elements can be substituted in the embodiments without departing from the true spirit and scope of the present application as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to variables in the manufacturing process, etc., there may be differences between the technical reproduction in the present application and the actual implementation. There may be other embodiments of the present application that are not specifically described. The description and illustrations should be regarded as illustrative, not restrictive. Modifications may be made to adapt specific circumstances, materials, material compositions, methods or processes to the goals, spirits and scopes of the present application. All such modifications fall within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations can be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit the present application.

Claims

1. A temperature equalizing plate structure, characterized in that: include: The shell comprises an upper shell and a lower shell, wherein a sealed heat-conducting space is formed inside, and the lower shell is divided into a heat source area and a surrounding area; A plurality of metal pillars connecting the upper shell and the lower shell, including a first metal pillar disposed in the peripheral area and a second metal pillar disposed in the heat source area; an auxiliary electroplating layer, disposed on the side wall of the first metal column and having a first pore inside; a main electroplating layer, disposed on the side wall of the second metal column, having second pores inside, wherein the average pore diameter of the second pores is smaller than that of the first pores; A heat-conducting fluid is filled in the heat-conducting space.

2. The temperature homogenizing plate structure according to claim 1, characterized in that: The distribution density of the second pores is greater than that of the first pores.

3. The temperature homogenizing plate structure according to claim 1, characterized in that: The main plating layer contacts the upper shell.

4. The temperature homogenizing plate structure according to claim 3, characterized in that: The top surface of the main electroplating layer is flush with the height of the second metal column.

5. The temperature homogenizing plate structure according to claim 1, characterized in that: The thermally conductive fluid fills the first pores and the second pores.

6. The temperature homogenizing plate structure according to claim 1, characterized in that: The auxiliary electroplating layer surrounds the main electroplating layer in a top view.

7. The temperature homogenizing plate structure according to claim 1, characterized in that: The main electroplating layer surrounds the second metal pillar.

8. The temperature homogenizing plate structure according to claim 1, characterized in that: The outer wall of the heat source area of ​​the lower shell contacts the heat source.

9. The temperature homogenizing plate structure according to claim 1, characterized in that: The first metal column is at least partially exposed outside the auxiliary electroplating layer.

10. The temperature homogenizing plate structure according to claim 1, characterized in that: In the cross-sectional structure, the portion where the main electroplating layer is connected to the auxiliary electroplating layer is a curved surface.

Images