Protection tool for monocrystalline silicon wafer processing

Abstract

The utility model discloses a protection tool for monocrystalline silicon wafer processing, which comprises a monocrystalline silicon wafer main body and a processing pool, the monocrystalline silicon wafer main body is cylindrical, a flexible adhesive tape is attached to the outer cylindrical surface of the monocrystalline silicon wafer main body in a surrounding manner, a rubber outer ring is annularly arranged in the middle of the flexible adhesive tape, a grinding disc is laid in the processing pool, and a rack is annularly arranged on the inner wall of the processing pool. A driver is installed at the upper end of the middle of the grinding disc, a plurality of evenly-distributed wandering star wheels are placed at the upper end of the grinding disc and located in the machining pool, a fluted disc is installed at the output end of the driver, a first containing groove and a second containing groove are formed in the wandering star wheels in a digging mode, and monocrystalline silicon wafer bodies matched with the first containing groove and the second containing groove in specification are placed in the first containing groove and the second containing groove respectively; according to the single crystal silicon wafer grinding device, the outer cylindrical surface of the single crystal silicon wafer main body is protected, the machining quality of the single crystal silicon wafer is improved, the satisfactory requirements of customers can be met, the single crystal silicon wafer main bodies of different specifications can be ground and machined at the same time, and the machining efficiency is further improved.

Description

Technical Field

[0001] The utility model relates to a technical field, in particular to a protection tooling for processing single crystal silicon wafers. Background Art

[0002] A single crystal silicon wafer is a crystal with a basically complete lattice structure. It has different properties in different directions and is a good semiconductor material. The silicon material market has broad prospects. In recent years, the output and sales revenue of single crystal silicon in China have increased rapidly. The production of silicon wafers mainly in small and medium sizes has become an internationally recognized fact, making great contributions to the development of the integrated circuit, semiconductor discrete device, and photovoltaic solar cell industries in the world and China, and is also widely used in the optical field.

[0003] After being cut, the single crystal silicon wafer needs to be ground to make its surface shape and thickness meet the requirements. However, during the grinding process, the cylindrical surface is also in the grinding sand, which will cause certain damage to the cylindrical surface, reducing the processing quality of the single crystal silicon wafer. When provided to customers subsequently, it cannot meet the satisfactory needs of customers, and rework is required, resulting in high production costs and more material consumption. Summary of the Utility Model

[0004] In view of the above defects or deficiencies in the prior art, it is desired to provide a protection tooling for processing single crystal silicon wafers.

[0005] According to the technical solution provided by the embodiment of the present application,

[0006] A protection tooling for processing single crystal silicon wafers, the main body of the single crystal silicon wafer is cylindrical, a soft tape is wrapped around the outer cylindrical surface of the main body of the single crystal silicon wafer, the bottom of the main body of the single crystal silicon wafer abuts against a grinding disc, a rubber outer ring is provided around the middle of the soft tape, the width of the soft tape is smaller than the height of the main body of the single crystal silicon wafer, a grinding disc is laid in a processing pool, a rack is installed around the inner wall of the processing pool, a driver is installed at the upper end of the middle of the grinding disc, the upper end of the grinding disc is a polishing layer, a plurality of evenly distributed planet wheels are placed in the processing pool above the grinding disc, the grinding disc is rotationally connected to the driver through electric drive, and a toothed disc is also installed at the output end of the driver.

[0007] Further, a first placement groove and a second placement groove are respectively dug on the planet wheels.

[0008] Further, the rack is rotationally connected to the outer circumference of the planet wheel through a gear engagement.

[0009] Further, the outer circumference of the planet wheel is rotationally connected to the toothed disc through a gear engagement.

[0010] Further, the diameter specifications of the first placement groove and the second placement groove are different, and single crystal silicon wafer main bodies with matching specifications are respectively placed in the first placement groove and the second placement groove.

[0011] In summary, the beneficial effects of the present application are as follows:

[0012] 1. Through the arrangement of the soft tape and the rubber outer ring, the soft tape is wrapped around the outer cylindrical surface of the single-crystal silicon wafer body. The rubber outer ring is arranged in the middle of the soft tape. The width of the soft tape is smaller than the height of the single-crystal silicon wafer body, forming a protection on the outer cylindrical surface of the single-crystal silicon wafer body. When the single-crystal silicon wafer body is placed in the planetary wheel and enters the processing pool for grinding, it effectively protects the cylindrical surface of the single-crystal silicon wafer, improves the processing quality of the single-crystal silicon wafer, can meet the satisfactory requirements of customers, avoids secondary processing, and reduces production costs.

[0013] 2. Through the arrangement of the first placement groove and the second placement groove, the diameter specifications of the first placement groove and the second placement groove are different. The single-crystal silicon wafer bodies with matching specifications are respectively placed in the first placement groove and the second placement groove. Different specifications of single-crystal silicon wafer bodies can be placed in the corresponding first placement groove or second placement groove on the planetary wheel for grinding, further improving the processing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Other features, objects, and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings:

[0015] Figure 1 It is a schematic diagram of the overall structure of the present utility model;

[0016] Figure 2 It is a schematic diagram of the planetary wheel structure in the present utility model;

[0017] Figure 3 It is a schematic diagram of the structure of the soft tape pasted on the single-crystal silicon wafer body in the present utility model;

[0018] Figure 4 It is a schematic diagram of the structure of the single-crystal silicon wafer body before grinding in the present utility model;

[0019] Figure 5 It is a schematic diagram of the structure of the single-crystal silicon wafer body after grinding in the present utility model.

[0020] Reference numerals in the figures: single-crystal silicon wafer body - 1, soft tape - 2, rubber outer ring - 3, processing pool - 4, rack - 401, grinding disc - 5, driver - 6, gear disc - 7, planetary wheel - 8, first placement groove - 9, second placement groove - 10. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] The following further describes the present application in detail with reference to the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the relevant utility model and are not intended to limit the utility model. Additionally, it should be noted that for the sake of convenience of description, only the parts related to the utility model are shown in the drawings.

[0022] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments can be combined with each other. The following will detail this application with reference to the accompanying drawings and in combination with the embodiments.

[0023] As Figure 1 、 Figure 2 and Figure 3 shown, a protection tooling for processing single-crystal silicon wafers. The single-crystal silicon wafer body 1 is cylindrical. A soft tape 2 is wrapped around the outer cylindrical surface of the single-crystal silicon wafer body 1. A rubber outer ring 3 is provided around the middle of the soft tape 2. A grinding disc 5 is laid in the processing pool 4. A rack 401 is installed around the inner wall of the processing pool 4. A driver 6 is installed at the upper end of the middle of the grinding disc 5. A plurality of evenly distributed planet wheels 8 are placed in the processing pool 4 at the upper end of the grinding disc 5. A gear disc 7 is installed at the output end of the driver 6. First placement grooves 9 and second placement grooves 10 are respectively dug on the planet wheels 8. Single-crystal silicon wafer bodies 1 with matching specifications are respectively placed in the first placement groove 9 and the second placement groove 10. The bottom of the single-crystal silicon wafer body 1 abuts against the grinding disc 5. The upper end of the grinding disc 5 is a polishing layer.

[0024] Furthermore, a soft tape 2 is wrapped around the outer cylindrical surface of the single-crystal silicon wafer body 1, and a rubber outer ring 3 is provided around the middle of the soft tape 2, forming a protection on the outer cylindrical surface of the single-crystal silicon wafer body 1. When the single-crystal silicon wafer body 1 is placed in the planet wheel 8 and enters the processing pool 4 for grinding processing, the cylindrical surface of the single-crystal silicon wafer body 1 is effectively protected. The width of the soft tape 2 is smaller than the height of the single-crystal silicon wafer body 1, which is beneficial to the grinding of the single-crystal silicon wafer body 1, improves the processing quality of the single-crystal silicon wafer body 1, can meet the satisfactory requirements of customers, avoids secondary processing, and reduces production costs.

[0025] Furthermore, the diameter specifications of the first placement groove 9 and the second placement groove 10 are different. Single-crystal silicon wafer bodies 1 with matching specifications are respectively placed in the first placement groove 9 and the second placement groove 10. Different specifications of single-crystal silicon wafer bodies 1 can be placed in the corresponding first placement groove 9 or second placement groove 10 on the planet wheel 8 for grinding processing, further improving the processing efficiency.

[0026] The working principle is as follows:

[0027] As Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 and Figure 5As shown, after the monocrystalline silicon wafer body 1 is cut, the cutting surface is relatively rough and needs to be ground. To protect the cylindrical surface of the monocrystalline silicon wafer body 1 from damage, the soft tape 2 is wrapped and mounted around the outer cylindrical surface of the monocrystalline silicon wafer body 1. A rubber outer ring 3 is provided in the middle of the soft tape 2 and placed in the corresponding first placement groove 9 or the second placement groove 10 on the planetary wheel 8. When the drive 6 drives the grinding disc 6 to rotate, the multiple planetary wheels 8 in the processing pool 4 rotate accordingly. The rack 401 is rotationally connected to the outer circumference of the planetary wheel 8 through gear meshing. The outer circumference of the planetary wheel 8 is rotationally connected to the toothed disc 7 through gear meshing, forming a gear linkage. The bottom of the monocrystalline silicon wafer body 1 abuts against the grinding disc 5, and the upper end of the grinding disc is a polishing layer. The monocrystalline silicon wafer body 1 is ground. Under the shielding and protection of the soft tape 2 and the rubber outer ring 3, whether the monocrystalline silicon wafer body 1 rotates on its own or rotates with the machine, the cylindrical surface is in a protected state. After grinding, the monocrystalline silicon wafer body 1 is taken out, and at the same time, the soft tape 2 on the outer cylindrical surface of the monocrystalline silicon wafer body 1 is removed, and it can be cleaned and packaged, improving the processing quality of the monocrystalline silicon wafer and meeting the satisfactory requirements of customers.

[0028] The above description is only the preferred embodiment of the present application and the description of the technical principle and other solutions used. At the same time, the scope of the utility model involved in the present application is not limited to the technical solution formed by the specific combination of the above technical features. It should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept of the utility model. For example, the technical solution formed by mutually replacing the above features with the (but not limited to) technical features with similar functions disclosed in the present application.

Claims

1. A protective tool for processing a single crystal silicon wafer, comprising a single crystal silicon wafer body (1) and a processing pool (4), characterized in that: The single crystal silicon wafer body (1) is cylindrical, and a soft adhesive tape (2) is mounted around the outer cylindrical surface of the single crystal silicon wafer body (1); A rubber outer ring (3) is arranged around the middle of the soft adhesive tape (2); A grinding disc (5) is placed in the processing pool (4), and a rack (401) is ring-mounted on the inner wall of the processing pool (4); A driver (6) is installed at the upper middle end of the grinding disc (5), and a plurality of evenly distributed planetary wheels (8) are placed at the upper end of the grinding disc (5) and in the processing pool (4); A toothed disc (7) is arranged at the output end of the driver (6); The planetary wheel (8) is provided with a first placement groove (9) and a second placement groove (10) respectively; The first placement groove (9) and the second placement groove (10) are respectively placed with single crystal silicon wafer bodies (1) of matching specifications.

2. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The bottom of the single crystal silicon wafer body (1) is in contact with the grinding disc (5).

3. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The width of the soft adhesive tape (2) is smaller than the height of the single crystal silicon wafer body (1).

4. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The upper end of the grinding disc (5) is a grinding layer, and the grinding disc (5) is connected to the driver (6) through electric drive.

5. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The rack (401) is rotationally connected to the outer circumference of the planetary wheel (8) through gear meshing.

6. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The outer circumference of the planetary wheel (8) is rotationally connected to the toothed disc (7) through gear meshing.

7. The protective tooling for processing single crystal silicon wafers according to claim 1, characterized in that: The diameter specifications of the first placement groove (9) and the second placement groove (10) are different.

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