Mesh

Abstract

The utility model relates to the field of precision nets, in particular to a net composed of micron-sized silk threads and a manufacturing method and application of the net. The screen comprises an area used for printing, the area is composed of micron-sized silk threads which are staggered in two directions, the diameter of the micron-sized silk threads is 0.1-50 microns, or the long diameter of the micron-sized silk threads is 5-80 microns, or the short diameter of the micron-sized silk threads is 2-30 microns; the silk threads are divided into transverse threads and longitudinal threads, all the transverse threads are located on the same layer, and all the longitudinal threads are located on the other layer different from the layer where the transverse threads are located. The transverse lines are arranged in parallel; the longitudinal lines are arranged in parallel; the transverse line and the longitudinal line are in contact at an angle of 0-90 degrees, and the transverse line and the longitudinal line are fixedly connected at each contact point of the transverse line and the longitudinal line; the silk threads are made of metal. The manufacturing process of the screen is simple, and the requirements of high-precision application scenes (such as silicon wafer silk-screen printing) can be met.

Description

Technical Field

[0001] The utility model relates to the field of precision nets, and in particular to a net composed of micron-scale silk threads, a manufacturing method thereof, and uses thereof. Background Art

[0002] Nets composed of metal or non-metal silk threads have a wide range of applications in different fields. For example, they can be used in touch screens, semiconductors, solar cells, MLCCs, filtration, screening, or silicon wafer screen printing, etc. Existing nets are usually made by weaving metal or non-metal silk threads. However, the weaving process has high requirements for physical properties such as the tension and curvature of metal or non-metal silk threads. Moreover, the weaving process is relatively complex. During the weaving process, it is necessary to adjust the different curvatures of warp and weft threads, which is extremely likely to cause the breakage of warp threads, making it difficult to obtain a net with stable quality. In addition, in the weaving process, since the silk threads in one direction must pass through two adjacent silk threads in the other direction to form a weaving structure, the diameter (or minor axis) of the silk threads in one direction inherently requires that the distance between two adjacent silk threads in the other direction cannot be less than the diameter (or minor axis) of the silk threads in one direction. Therefore, there is an insurmountable lower limit for the distance between silk threads in the existing weaving process (for example, for steel wires, the lower limit is, for example, 11 μm), which cannot meet the application requirements of related fields with higher precision requirements.

[0003] Specifically in the field of silicon wafer screen printing, since the silicon wafer screen pattern is composed of longitudinal lines and transverse lines, during later printing, for the existing nets made by the weaving process, the longitudinal lines and transverse lines at inappropriate positions need to be burned off with expensive laser equipment according to different patterns. This greatly increases the production cost. Moreover, removing some longitudinal lines and transverse lines reduces the printable web tension that can be borne. And because the distance between the silk threads in one direction is actually affected by the silk threads in the other direction (the silk threads in one direction are interspersed with the silk threads in the other direction), there will be a certain limit to the distance between the silk threads in one direction (i.e., the diameter or minor axis of the silk threads in the other direction). Therefore, the reduced printable web tension cannot be compensated by reducing the distance between silk threads and increasing the number of silk threads during the weaving process in advance. That is, within a specific printing area, due to the certain limit of the distance between silk threads in the weaving process, there is also a certain limit to the number of silk threads, and there is an insurmountable upper limit to the printable web tension provided by the silk threads. And at a low printable web tension, after the screen is pressed down by the printing squeegee and the squeegee moves away horizontally, the screen cannot quickly and stably leave the plate (the printing process is as Figure 1 shown), resulting in unstable slurry forming, which reduces the printing quality. And due to insufficient strength in bearing tension, it is easy to cause deformation of the printing plate due to the breakage of silk threads during the printing process, greatly shortening the printing life and increasing the printing cost.

[0004] In addition, in the mesh made by the weaving process, the longitudinal lines and the transverse lines undulate and intersect with each other up and down (as shown in Figure 5 and Figure 7a ), the silver paste is seriously blocked by the silk threads, which seriously reduces the thickness of the corresponding part of the grid line (i.e., the silver metal line obtained by printing). In other words, the cross-sectional area of the grid line becomes smaller at this part. On the one hand, this increases the possibility of broken grids, and on the other hand, it will also adversely affect the electrical parameters of the grid line (for example, the resistance increases due to the small cross-sectional area of this part, thereby reducing the power generation efficiency), and reduces the printing quality (as shown in Figure 6 and Figure 7b ).

[0005] Therefore, there is an urgent need in the art for a mesh with a simple manufacturing process that can meet the requirements of high-precision application scenarios (for example, silicon wafer screen printing). Especially when it is used for silicon wafer screen printing, it can reduce production costs, improve the tension of the mesh layout, and make the grid line thickness uniform, thereby improving the printing quality. Summary of the Utility Model

[0006] The utility model provides a mesh, a manufacturing method thereof and a use thereof. The manufacturing process of the mesh is simple and can meet the requirements of high-precision application scenarios (for example, silicon wafer screen printing). Especially when it is used for silicon wafer screen printing, it can reduce production costs, improve the tension of the mesh layout, and make the grid line thickness uniform, thereby improving the printing quality.

[0007] In a first aspect, the utility model provides a mesh, which is composed of silk threads;

[0008] The silk threads are divided into transverse lines and longitudinal lines. All the transverse lines are located in the same layer, and all the longitudinal lines are located in another layer different from the layer where the transverse lines are located;

[0009] The transverse lines are arranged parallel to each other; the longitudinal lines are arranged parallel to each other; and the transverse lines and the longitudinal lines contact at an angle of 0 - 90°.

[0010] In one embodiment, the silk threads can be materials with various materials, radial shapes and sizes. For example, it can have a circular radial surface, an elliptical radial surface, etc.; for example, it can be a micron-level silk thread.

[0011] In one embodiment, a part of (some or all) the transverse lines (for example, all parts or some parts) has a circular radial surface.

[0012] In one embodiment, a part of (some or all) the longitudinal lines (for example, all parts or some parts) has a circular radial surface.

[0013] In one embodiment, a part of (some or all) the transverse lines (for example, all parts or some parts) has an elliptical radial surface.

[0014] In one embodiment, a part of (some or all) the longitudinal lines (e.g., all parts or some parts) has an elliptical cross-section.

[0015] In one embodiment, all the transverse lines (e.g., all parts or some parts) have a circular cross-section, and all the longitudinal lines (e.g., all parts or some parts) have a circular cross-section.

[0016] In one embodiment, all the transverse lines (e.g., all parts or some parts) have an elliptical cross-section, and all the longitudinal lines (e.g., all parts or some parts) have a circular cross-section.

[0017] In one embodiment, all the longitudinal lines (e.g., all parts or some parts) have an elliptical cross-section, and all the transverse lines (e.g., all parts or some parts) have a circular cross-section.

[0018] In one embodiment, all the transverse lines (e.g., all parts or some parts) have an elliptical cross-section, and all the longitudinal lines (e.g., all parts or some parts) have an elliptical cross-section.

[0019] In one embodiment, some parts of all the transverse lines and / or all the longitudinal lines have an elliptical cross-section, and the remaining parts have a circular cross-section. For example, the contact part of the transverse lines and the longitudinal lines may have an elliptical cross-section, while the remaining parts have a circular cross-section.

[0020] In one embodiment, the transverse lines and the longitudinal lines are fixedly connected at the contact points.

[0021] In a preferred embodiment, the mesh is composed of micron-scale silk threads. The diameter of the micron-scale silk threads is 0.1 - 50 μm (e.g., it can be 0.1, 0.5, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 30, 35, 40, 45 or 50 μm, or a sub-range composed of any value within these ranges), or its major axis is 5 - 80 μm (e.g., it can be 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 or 80 μm, or a sub-range composed of any value within these ranges), or its minor axis is 2 - 30 μm (e.g., it can be 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25 or 30 μm, or a sub-range composed of any value within these ranges);

[0022] The silk threads are divided into horizontal threads and vertical threads. All the horizontal threads are located on the same layer, and all the vertical threads are located on another layer different from the layer where the horizontal threads are located.

[0023] The horizontal threads are arranged parallel to each other; the vertical threads are arranged parallel to each other; and the horizontal threads and the vertical threads are in contact at an angle of 0 - 90°, and the horizontal threads and the vertical threads are fixedly connected.

[0024] In another preferred embodiment, the mesh includes an area for printing, which is composed of micron - scale bidirectionally interleaved silk threads. The diameter of the micron - scale silk threads is 0.1 - 50 μm (for example, it can be 0.1, 0.5, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 30, 35, 40, 45 or 50 μm, or a sub - range composed of any value within these ranges) or its major axis is 5 - 80 μm (for example, it can be 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 or 80 μm, or a sub - range composed of any value within these ranges) or its minor axis is 2 - 30 μm (for example, it can be 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25 or 30 μm, or a sub - range composed of any value within these ranges);

[0025] The silk threads are divided into horizontal threads and vertical threads. All the horizontal threads are located on the same layer, and all the vertical threads are located on another layer different from the layer where the horizontal threads are located.

[0026] The horizontal threads are arranged parallel to each other; the vertical threads are arranged parallel to each other; the horizontal threads and the vertical threads are in contact at an angle of 0 - 90°, and at each contact point of the horizontal threads and the vertical threads, the horizontal threads and the vertical threads are fixedly connected;

[0027] The material of the silk threads is metal.

[0028] In one embodiment, the horizontal threads are located on the upper layer and the vertical threads are located on the lower layer; or the horizontal threads are located on the lower layer and the vertical threads are located on the upper layer.

[0029] In one embodiment, the distance m between adjacent horizontal threads can be equal or unequal; and / or the distance n between adjacent vertical threads can be equal or unequal.

[0030] In one embodiment, 0 < m ≤ 2 mm. For example, m can be independently, for example, 0.0001, 0.0005, 0.001, 0.005, 0.01, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, or 2 mm, or a sub-range composed of any values within these ranges.

[0031] In one embodiment, according to the actual application requirements, some or all of m can be independently greater than 2 mm. For example, greater than 2 mm, greater than 5 mm, greater than 10 mm, greater than 20 mm, greater than 50 mm, greater than 100 mm, or greater than 200 mm, or a sub-range composed of any values within these ranges.

[0032] In one embodiment, 0 < n ≤ 2 mm. For example, n can be independently, for example, 0.0001, 0.0005, 0.001, 0.005, 0.01, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, or 2 mm, or a sub-range composed of any values within these ranges.

[0033] In one embodiment, according to the actual application requirements, some or all of n can be independently greater than 2 mm. For example, greater than 2 mm, greater than 5 mm, greater than 10 mm, greater than 20 mm, greater than 50 mm, greater than 100 mm, or greater than 200 mm, or a sub-range composed of any values within these ranges.

[0034] In one embodiment, the contact angle between the horizontal line and the vertical line is 90° or less than 90°. For example, the contact angle between the horizontal line and the vertical line can be 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, or 90°, or a sub-range composed of any values within these ranges.

[0035] In one embodiment, the geometric shape of the mesh formed by the horizontal line and the vertical line is a parallelogram.

[0036] In one embodiment, the material of the silk thread includes metal. For example, the silk thread can be tungsten wire, steel wire (e.g., stainless steel wire), or silk thread of other metal materials (e.g., gold, silver, copper, aluminum, etc.).

[0037] In one embodiment, the material of the silk thread includes non-metals, for example, high molecular fibers, including organic high molecular fibers (such as synthetic fibers like nylon and polyester) or inorganic high molecular fibers (such as carbon fibers); in a preferred embodiment, the silk thread is a carbon fiber silk thread.

[0038] In one embodiment, the silk threads are arranged on the screen plate. For example, the silk threads can be wound around the screen plate.

[0039] In one embodiment, the diameter of the circular radial surface is 0.1 - 50 μm. For example, its diameter can be 0.1, 0.5, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, 30, 35, 40, 45 or 50 μm, or its diameter can be a sub-range composed of any values within these ranges. In a preferred embodiment, the diameter of the circular radial surface is 1 - 30 μm. For example, 5 - 10 μm, 11 - 20 μm, or 20 - 30 μm.

[0040] In one embodiment, the major axis of the elliptical radial surface is 5 - 80 μm. For example, its major axis can be 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 or 80 μm, or its major axis can be a sub-range composed of any values within these ranges. In a preferred embodiment, the major axis of the elliptical radial surface is 5 - 50 μm. For example, 5 - 10 μm, 11 - 20 μm, or 20 - 50 μm.

[0041] In one embodiment, the minor axis of the elliptical radial surface is 2 - 30 μm. For example, its minor axis can be 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25 or 30 μm, or its minor axis can be a sub-range composed of any values within these ranges. In a preferred embodiment, the minor axis of the elliptical radial surface is 3 - 20 μm. For example, 3 - 10 μm, or 11 - 20 μm.

[0042] In one embodiment, the mesh count of the net is 100 - 2000 meshes. For example, the mesh count can be 100, 150, 200, 250, 300, 350, 400, 450, 500, 520, 550, 600, 650, 700, 750, 800, 900, 950, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700, 1800, 1900 or 2000 meshes, or the mesh count can be a sub-range composed of any value within these ranges. In a preferred embodiment, the mesh count of the net is 200 - 1000 meshes. For example, 200 - 520 meshes, 520 - 800 meshes, or 800 - 1000 meshes.

[0043] In one embodiment, the fixed connection can be any connection method including welding or gluing.

[0044] In one embodiment, the maximum tensile forces that the horizontal line and the vertical line can withstand can be equal or unequal. For example, they can each independently be 1N - 10000N.

[0045] In one embodiment, the single-line tensile strength of the horizontal line and the single-line tensile strength of the vertical line can each independently be 1000 - 7000 MPa. For example, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 2700, 2800, 2900, 3000, 3100, 3200, 3300, 3400, 3500, 3600, 3700, 3800, 3900, 4000, 4500, 5000, 5500, 6000, 6500 or 7000 MPa, or can be a sub-range composed of any value within these ranges.

[0046] In one embodiment, the filament is a carbon fiber filament with a major diameter of 8 - 10 μm, for example, 8, 8.5, 9, 9.5, or 10 μm, or the major diameter can be a sub - range composed of any values within these ranges; and / or its minor diameter is 2 - 4 μm, for example, 2, 2.5, 3, 3.5, or 4 μm, or the minor diameter can be a sub - range composed of any values within these ranges; and / or its diameter is 5 - 7 μm, for example, 5, 5.5, 6, 6.5, or 7 μm, or the diameter can be a sub - range composed of any values within these ranges; the tensile strength range of a single filament is 3000 - 7000 MPa, for example, 3000, 3100, 3200, 3300, 3400, 3500, 3600, 3700, 3800, 3900, 4000, 4500, 5000, 5500, 6000, 6500, or 7000 MPa, or it can be a sub - range composed of any values within these ranges.

[0047] In one embodiment, the filament is a stainless - steel wire with a major diameter of 9 - over 80 μm, for example, 9, 9.5, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 18, 19, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, or 80 μm, or the major diameter can be a sub - range composed of any values within these ranges; and / or its minor diameter is 2 - 30 μm, for example, 2, 2.5, 3, 3.5, 4, 4.5, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, or 30 μm, or the minor diameter can be a sub - range composed of any values within these ranges; and / or its diameter is 6 - 50 μm, for example, 6, 6.5, 7, 7.5, 8, 8.5, 9, 10, 15, 20, 25, 30, 35, 40, 45, or 50 μm, or the diameter can be a sub - range composed of any values within these ranges; the tensile strength range of a single filament is 1000 - 4000 MPa, for example, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 3000, 3500, or 4000 MPa, or it can be a sub - range composed of any values within these ranges.

[0048] In one embodiment, the wire is a tungsten wire, with a major axis of 6 - 80 μm or more, for example, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 18, 19, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 or 80 μm, or the major axis can be a sub - range composed of any value within these ranges; and / or its minor axis is 2 - 30 μm, for example, 2, 2.5, 3, 3.5, 4, 4.5, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25 or 30 μm, or the minor axis can be a sub - range composed of any value within these ranges; and / or its diameter is 3 - 50 μm, for example, 3, 4, 5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 10, 15, 20, 25, 30, 35, 40, 45 or 50 μm, or the diameter can be a sub - range composed of any value within these ranges; the tensile strength range of a single wire is 3000 - 6000 MPa, for example, 3000, 3100, 3200, 3300, 3400, 3500, 3600, 3700, 3800, 3900, 4000, 5000, 5500 or 6000 MPa, or can be a sub - range composed of any value within these ranges.

[0049] In one embodiment, the mesh is arranged on the mesh fabric.

[0050] In one embodiment, the overall specification of the mesh is (50 - 800)*(50 - 800) mm. In one embodiment, the overall specification of the mesh is not more than 400*400 mm, for example, it can be not more than 400*400 mm, 390*390 mm, 380*380 mm, 370*370 mm, 360*360 mm, 350*350 mm, 300*300 mm, 250*250 mm, 200*200 mm, 100*100 mm or 50*50 mm, or can be a sub - range composed of any value within these ranges.

[0051] In a second aspect, the present utility model provides a method for manufacturing the mesh of the first aspect of the present utility model, which includes the following steps:

[0052] 1) Arrange micron - level wires;

[0053] Wherein:

[0054] The wires are divided into horizontal wires and vertical wires;

[0055] Arrange the horizontal lines first and then the vertical lines; or arrange the vertical lines first and then the horizontal lines, such that:

[0056] All the horizontal lines are located on the same layer, and all the vertical lines are located on another layer different from the layer where the horizontal lines are located;

[0057] in the other layer;

[0058] The horizontal lines are arranged parallel to each other; the vertical lines are arranged parallel to each other; and the horizontal lines and the vertical lines are in contact at an angle of 0 - 90°;

[0059] 2) Fix the connection between the horizontal lines and the vertical lines at each contact point; and

[0060] 3) Flatten the silk thread, where the flattening process is carried out before step 1), or between step 1) and 2), or after step 2).

[0061] In a preferred embodiment, the method includes the following steps:

[0062] 1) Arrange micron-scale metal silk threads with a major diameter or diameter of 0.1 - 50 μm;

[0063] Wherein:

[0064] The silk threads are divided into horizontal lines and vertical lines;

[0065] Arrange the horizontal lines first and then the vertical lines; or arrange the vertical lines first and then the horizontal lines, so that:

[0066] All the horizontal lines are located on the same layer, and all the vertical lines are located on another layer different from the layer where the horizontal lines are located;

[0067] The horizontal lines are arranged parallel to each other; the vertical lines are arranged parallel to each other; and the horizontal lines and the vertical lines are in contact at an angle of 0 - 90°;

[0068] 2) Fix the connection between the horizontal lines and the vertical lines at each contact point;

[0069] 3) Optionally, flatten the silk thread, where the flattening process is carried out before step 1), or between step 1) and 2), or after step 2).

[0070] In one embodiment, the flattening process is carried out before step 1) to flatten the silk thread with a circular cross-section into a silk thread with an elliptical cross-section.

[0071] In one embodiment, the flattening process is carried out between the above steps 1) and 2) to flatten the silk thread portion with a circular cross-section into a silk thread portion with an oval cross-section at the contact of the horizontal line and the vertical line.

[0072] In one embodiment, the flattening process is carried out after the above step 2) to flatten the silk thread portion with a circular cross-section into a silk thread portion with an oval cross-section at the contact of the horizontal line and the vertical line.

[0073] In one embodiment, the flattening process can be applied to all parts of the silk thread, or to some parts of the silk thread, for example, the contact of the horizontal line and the vertical line.

[0074] In one embodiment, the flattening process is applied to all parts of all the horizontal lines and all parts of all the vertical lines.

[0075] In one embodiment, the flattening process is only applied to all parts of all the horizontal lines.

[0076] In one embodiment, the flattening process is only applied to all parts of all the vertical lines.

[0077] In one embodiment, the flattening process is only applied to the contact of the horizontal line and the vertical line.

[0078] In one embodiment, the silk threads are arranged on the mesh plate. For example, the silk threads can be wound around the mesh plate.

[0079] In one embodiment, the distance m between adjacent horizontal lines is set during step 1); and / or the distance n between adjacent vertical lines is set during step 1).

[0080] In one embodiment, the fixed connection is gluing. The specific operation method is: apply glue at the intersection of the horizontal line and the vertical line, and let it stand or heat (the heating temperature and time depend on the specific glue, for example, it can be heated to 170°C and maintained for 30 min) to cure the glue. Alternatively, all the horizontal lines and all the vertical lines can be glued as a whole. For example, all the horizontal lines and all the vertical lines are put into a mold, and then plastic is injected to form a film on the surfaces of all the horizontal lines and all the vertical lines, thereby fixing all the horizontal lines and all the vertical lines.

[0081] In one embodiment, the fixed connection is welding. The specific operation method is: apply solder at the contact points of the horizontal line and the vertical line, then scrape off the excess solder, put the mesh into an oven for baking (the baking temperature can be, for example, 200 - 600°C, and the baking time is 5 - 30 min, for example, it can be 10 min), and then cool (for example, it can be naturally cooled to room temperature).

[0082] In one embodiment, the fixed connection is welding, and the specific operation method is as follows: Tin-plate the mesh (the thickness can be 1-10 μm, for example, 2 μm), then take it out and put it into an oven. Bake it to melt the tin plating (the baking temperature is 200-300 °C, for example, it can be 250 °C, and the baking time is 5-30 min, for example, it can be 10 min), and then cool it (for example, it can be naturally cooled to room temperature).

[0083] In one embodiment, the oven can be a vacuum oven or a protective gas oven.

[0084] In one embodiment, before or after step 1), the horizontal lines and vertical lines are cleaned, and the entire cleaning process can be repeated 0, 1, 2, or 3 times.

[0085] In one embodiment, the cleaning is divided into three procedures. The first procedure uses a degreasing agent (for example, various commercially available surfactants, for example, NaOH solution) for cleaning, the second procedure uses hot water (for example, the temperature is 31-70 °C) for cleaning, and the third procedure uses cold water (for example, the temperature is 20-30 °C) for cleaning.

[0086] In a third aspect, the present invention provides the use of the mesh of the first aspect of the present invention or the mesh made by the method of the second aspect of the present invention for silicon wafer screen printing.

[0087] In the present invention, "bidirectional interleaving" refers to the non-parallel positional relationship between any horizontal line and any vertical line, that is, an angle less than or equal to 90° is formed between any horizontal line and any vertical line.

[0088] In the present invention, the term "layer" used to describe the positions of the horizontal lines and vertical lines does not limit the composition and structure within the layer itself, but only limits the relative positional relationship between all horizontal lines, the relative positional relationship between all vertical lines, and the relative positional relationship between all horizontal lines and vertical lines. That is, when the mesh of the present invention is in a flat state, all horizontal lines are in substantially the same plane, all vertical lines are also in substantially the same plane, and the plane where the horizontal lines are located and the plane where the vertical lines are located are different parallel planes adjacent to each other up and down.

[0089] The "parallel" in the present invention can refer to strict parallelism or approximate parallelism that meets the actual needs of the corresponding field.

[0090] The "contact angle" described in the present invention or the contact angle between the horizontal line and the vertical line refers to the angle less than or equal to 90° formed between the horizontal line and the vertical line when ignoring the cross-sectional dimensions of the filaments and the possible gaps between the filaments and only regarding the filaments as two-dimensional lines.

[0091] In the present utility model, the term "contact" describing the positional relationship between the horizontal line and the vertical line may refer to the actual physical contact between the two, or may refer to the existence of the "contact angle" described above between the two although there is a gap therebetween; preferably, it refers to the actual physical contact between the two.

[0092] During the application process of the net in the present utility model (for example, during storage and transportation), it may curl. However, the positional relationships described in the present utility model are all based on the net being in a flat state.

[0093] In the present utility model, the term "elliptical diameter plane" may refer to the diameter plane formed after the silk thread with a regular circular diameter plane is pressed (i.e., flattened). For example, its shape may be a standard ellipse or a similar ellipse.

[0094] In the present utility model, the term "major axis" refers to the longest distance between any two points on the outer periphery of the silk thread diameter plane. Correspondingly, the term "minor axis" refers to the length of the line segment that perpendicularly bisects the major axis and whose two endpoints are on the outer periphery of the silk thread diameter plane. When the silk thread diameter plane is circular or approximately circular (i.e., the "major axis" is equal to or approximately equal to the "minor axis"), the "major axis" and the "minor axis" can also be referred to as the "diameter".

[0095] In the present utility model, when describing the silk thread, the term "micrometer level" means that the major axis, minor axis or diameter of the silk thread can be in the range of 0.1 - 1000 μm. For example, its major axis, minor axis or diameter can be 0.1, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 μm, or can be a sub - range composed of any values within these ranges.

[0096] In the present utility model, the term "parallelogram" can be any geometric figure that conforms to the geometric shape definition of a "parallelogram", such as a rectangle (e.g., a square), a rhombus, etc.

[0097] In the present utility model, the term "net plate" refers to a plate - like object (i.e., non - hollow) or a frame - like object (i.e., hollow) used to set the "net" of the present utility model; according to the requirements of the application scenario, it can be of any geometric shape (e.g., a rectangle, a rhombus or an irregular geometric shape); it can have a certain thickness, and the "net" in the present utility model is located on one side of this "net plate"; when the "net" of the present utility model is set on the "net plate" in a winding manner, the other side can have silk threads.

[0098] In the present utility model, the terms "horizontal line", "first line", and "weft line" can be used interchangeably, and the terms "longitudinal line", "second line", and "warp line" can be used interchangeably. That is, in the present utility model, the terms "horizontal line" and "longitudinal line" are not used to define the positional relationship between the two silk threads as a perpendicular relationship, but are only used to distinguish the silk threads with two positional relationships.

[0099] In the present utility model, when describing the position of the silk thread, the "upper layer" refers to the layer that is far from the screen plate during production; correspondingly, the "lower layer" refers to the layer that is in contact with the screen plate during production.

[0100] In the present utility model, the "screen cloth" refers to the structure that bears the screen when the screen is used for silicon wafer screen printing. When the screen is set on the "screen cloth", according to specific needs, the "upper layer" of the original silk thread can be either the layer close to the silicon wafer or the layer far from the silicon wafer.

[0101] When describing the specifications of the screen in the present utility model, the numerical format of "400*400mm" is used, which can be understood as representing the area of the screen by the product result, or the two numbers respectively represent the lengths of the horizontal line and the longitudinal line from left to right. The specifications of the screen not exceeding 400*400mm can refer to the area of the screen not exceeding the product of 400*400mm, or the lengths of the horizontal line and the longitudinal line not exceeding 400mm respectively.

[0102] In the present utility model, the "screen cloth tension" refers to the tension borne by all the silk threads on the screen cloth when the screen of the present utility model is set on the screen cloth; when the silk threads are determined, the "screen cloth tension" increases proportionally with the increase in the number of silk threads.

[0103] In the present utility model, "MLCC" refers to a chip capacitor.

[0104] The "room temperature" described in the present utility model refers to the temperature range of 10 - 40°C.

[0105] The "thickness" of the grid line described in the present utility model refers to the height at which the highest point of each cross-section of the printed grid line leaves the printing plane. As Figure 7a and Figure 7b shown, the thickness of the grid line being "non-uniform" or "inhomogeneous" means that there are notches of different depths (caused by the up and down undulation of the silk threads) on the grid line obtained by printing with the existing woven screen. This increases the possibility of grid breakage at the places with deeper notches, and also adversely affects the electrical parameters of the corresponding parts (for example, the resistance at the places with deeper notches is correspondingly larger due to the smaller cross-sectional area, reducing the power generation efficiency). As Figure 4a and Figure 4bAs shown, the thickness of the grid lines being "uniform" or "homogeneous" means that in the mesh of the present utility model, the height of the filaments in each layer is the same. Therefore, the depth of the notches on the grid lines obtained by printing the mesh of the present utility model is the same. Moreover, according to the requirements of the printed pattern, the layer where the horizontal or vertical lines of the mesh are located can be adjusted (for example, adjusted during the production of the mesh, or adjusted when the mesh is set on the mesh cloth before printing; for example, adjusted to be as shown in Figure 2 ), so as to achieve the same depth of the notches on the grid lines, and the depth of the notches is less than or equal to the shallowest notch depth of the grid lines obtained by weaving the mesh, and / or the depth of the notches is less than the deepest notch depth of the grid lines obtained by weaving the mesh (as shown in Figure 3 and Figure 6 ). In short, the electrical properties of the grid lines made of the mesh of the present utility model are better.

[0106] In the present utility model, the deeper notches on the grid lines obtained by printing the existing woven mesh can also be referred to as "grid line deep recesses", and the shallower notches on the grid lines obtained by printing the existing woven mesh can also be referred to as "grid line shallow recesses"; the notches on the grid lines obtained by printing the mesh of the present utility model can also be referred to as "grid line recesses".

[0107] The filaments of the mesh of the present utility model can be made finer than in the prior art, the spacing between the filaments is smaller than in the prior art, and at the same time its manufacturing process is simpler, which can meet the needs of high-precision application scenarios.

[0108] The mesh of the present utility model can especially be used for silicon wafer screen printing. Since the filaments in the mesh of the present utility model are arranged rather than woven, the distance between the filaments can be easily adjusted before the filaments are fixed. The distance m between adjacent horizontal lines and / or the distance n between adjacent horizontal lines can theoretically approach 0 infinitely. Thus, according to the specific pattern of the silicon wafer screen printing, the distance between the filaments can be adjusted to leave out the positions of the pattern, saving the step of removing the longitudinal and horizontal lines at inappropriate positions during the later production of the screen mesh, and reducing the production cost.

[0109] Moreover, when adjusting the silk thread spacing, no silk thread is placed at the position corresponding to where the silk thread needs to be withdrawn from the woven mesh (i.e., increasing the spacing between the silk threads at the corresponding position), and the silk threads reduced at the foregoing position are compensated at the remaining positions (i.e., reducing the spacing between the silk threads at this position). The corresponding number of silk threads can be not reduced, so that the mesh tension will not be decreased and the mesh tension is not affected, further improving the printing quality. However, for the existing woven mesh, since the distance between adjacent horizontal lines and / or the distance between adjacent vertical lines are limited by the diameter or short diameter of the silk thread (i.e., the distance between adjacent horizontal lines is limited by the diameter or short diameter between the vertical lines; the distance between adjacent vertical lines is limited by the diameter or short diameter of the horizontal line), therefore, it is impossible to compensate for the lost mesh tension caused by the subsequent withdrawal of the silk thread by adjusting the silk thread spacing in advance and increasing the silk threads during the process of weaving the mesh. In short, within a given printing area, the silk thread arrangement mode of the mesh of the present invention allows more silk threads to be arranged, thereby providing a higher mesh tension and improving the service life and printing quality of the mesh.

[0110] In addition, since the silk threads in the mesh of the present invention are arranged, there is no situation where the vertical lines and horizontal lines in the woven mesh rise and fall and interleave with each other, and there is no situation where the silver paste is severely blocked by the silk threads in the woven mesh. Therefore, the thickness of each part of the grid line is relatively uniform, reducing the possibility of broken grids and also reducing the adverse effects on the electrical parameters (such as resistance, etc.) of the grid line, achieving better printing quality. Description of the Drawings

[0111] Figure 1 Schematic diagram of screen printing on a silicon wafer.

[0112] Figure 2 Partial cross-sectional enlarged schematic diagram of a mesh of the present invention.

[0113] Figure 3 For Figure 2 Side view (including notch) of the partial grid line obtained by using the mesh of the present invention for screen printing on a silicon wafer.

[0114] Figure 4a Schematic diagram of using a mesh of the present invention for screen printing on a silicon wafer. Figure 4b Having Figure 4a Stereoscopic schematic diagram of the grid line obtained by using the mesh with the structure shown in the figure for screen printing on a silicon wafer. For the purpose of illustration, only one printed grid line is shown.

[0115] Figure 5 Partial cross-sectional enlarged schematic diagram of an existing woven mesh.

[0116] Figure 6 For Figure 5Side view (including the deep recess of the grid line) of the existing woven mesh used for the local grid lines obtained by screen printing on the silicon wafer.

[0117] Figure 7a Schematic diagram of an existing woven mesh used for screen printing on a silicon wafer. Figure 7b Having Figure 7a Three-dimensional schematic diagram of the grid line obtained by using the mesh with the structure shown for screen printing on the silicon wafer. For illustrative purposes, only one printed grid line is shown.

[0118] Figure 8 Shows the arrangement of the silk threads of a mesh of the present invention.

[0119] Figure 9 Shows another arrangement of the silk threads of a mesh of the present invention.

[0120] Figure 10 Schematic diagram showing a specific pattern of screen printing on the silicon wafer.

[0121] Figure 11 Side view of the grid line obtained by using the existing woven mesh for screen printing on the silicon wafer.

[0122] Reference numerals in the figure:

[0123] 1: Horizontal line. 2: Vertical line. 3: Silicon wafer. 4: Screen plate. 5: Grid line. 41: Printed grid line (before removing the screen). 42: Top of the grid line (before removing the screen). 43: Recess of the grid line (before removing the screen). 41': Printed grid line (after removing the screen). 42': Top of the grid line (after removing the screen). 43': Recess of the grid line (after removing the screen). 71: Printed grid line (before removing the screen). 72: Shallow recess of the grid line (before removing the screen). 73: Deep recess of the grid line (before removing the screen). 71': Printed grid line (after removing the screen). 72': Shallow recess of the grid line (after removing the screen). 73': Deep recess of the grid line (after removing the screen). Detailed implementation manners

[0124] To better understand the present invention, the content of the present invention will be further elaborated below in conjunction with embodiments. However, the content of the present invention is not limited to the following embodiments. The experimental operations described in the following embodiments are all conventional operations unless otherwise specified; the reagents and materials described are all commercially available unless otherwise specified.

[0125] Embodiment 1

[0126] The net is prepared by the following steps: A stainless steel wire with a diameter of 15 μm (the single-wire tensile strength is 2000 MPa) is wound around a wire mesh plate, and it is integrally flattened before winding around the wire mesh plate. The distance m between adjacent horizontal wires is 5 μm, and the distance n between adjacent vertical wires is 5 μm. After being flattened, the stainless steel wire has been cleaned before winding around the wire mesh plate. The first procedure is to clean it with a degreasing agent, the second procedure is to clean it with hot water at 50 °C, and the third procedure is to clean it with cold water at 20 °C. First, the horizontal wires are wound, and then the vertical wires are wound. The horizontal wires form a layer in contact with the wire mesh plate, and the vertical wires form another layer above the horizontal wires. As Figure 8 shown, the contact angle between the horizontal wire and the vertical wire is 90°.

[0127] Solder is applied to the contact points of the horizontal and vertical wires, and the solder used is a tin-based filler metal. Then, the excess solder is scraped off with a squeegee. The wire mesh plate wound with stainless steel wire is placed in a vacuum oven and baked at 250 °C for 10 min. Then it is cooled to 25 °C.

[0128] The size of the obtained net is 400*400 mm.

[0129] Example 2

[0130] The net is prepared by the following steps:

[0131] A stainless steel wire with a diameter of 15 μm (the single-wire tensile strength is 2000 MPa) is wound around a wire mesh plate, and it is integrally flattened before winding around the wire mesh plate. First, the horizontal wires are wound, and then the vertical wires are wound. The horizontal wires form a layer in contact with the wire mesh plate, and the vertical wires form another layer above the horizontal wires. The distance m between adjacent horizontal wires is 10 μm, and the distance n between adjacent vertical wires is 10 μm. As Figure 9 shown, the contact angle between the horizontal wire and the vertical wire is 45°.

[0132] The arranged stainless steel wire is cleaned. The first procedure is to clean it with a NaOH solution of a degreasing agent, the second procedure is to clean it with hot water at 50 °C, and the third procedure is to clean it with cold water at 20 °C. The cleaning is repeated once.

[0133] Glue is applied to the contact points of the horizontal and vertical wires and heated at 170 °C for 30 min to cure the glue.

[0134] The size of the obtained net is 300*300 mm.

[0135] Example 3

[0136] The net is prepared by the following steps:

[0137] Use a stainless steel wire with a diameter of 15 μm (single wire tensile strength of 2000 MPa) to wind the mesh plate. The stainless steel wire to be used as the horizontal wire later is flattened as a whole before winding the mesh plate, and the stainless steel wire to be used as the vertical wire later is not flattened at all before winding the mesh plate. First wind the horizontal wires, and then wind the vertical wires. The horizontal wires form a layer in contact with the mesh plate, and the vertical wires form another layer above the horizontal wires. The distance m between adjacent horizontal wires is 10 μm, and the distance n between adjacent vertical wires is 5 μm. As Figure 8 shown, the contact angle between the horizontal wire and the vertical wire is 90°.

[0138] Clean the arranged stainless steel wires. For the first procedure, use a degreasing agent NaOH solution for cleaning. For the second procedure, use hot water at 50 °C for cleaning. For the third procedure, use cold water at 20 °C for cleaning. Repeat the cleaning once.

[0139] Put the mesh plate wound with stainless steel wires into an electroplating bath, electroplate about 3 - 4 μm thick tin, then take out the mesh plate and put it into a vacuum oven. Bake at 250 °C for 10 min to melt the plated tin. Due to the attraction of the slit to the liquid, the melted tin will automatically gather at the contact points of the horizontal and vertical wires. Then cool to 25 °C.

[0140] The size of the obtained mesh is 200 * 200 mm.

[0141] Example 4

[0142] Prepare the mesh by the following steps:

[0143] Use a stainless steel wire with a diameter of 10 μm (single wire tensile strength of 1800 MPa) to wind the mesh plate. First wind the horizontal wires, and then wind the vertical wires. The horizontal wires form a layer in contact with the mesh plate, and the vertical wires form another layer above the horizontal wires. The contact angle between the horizontal wire and the vertical wire is 10°. The distance m between adjacent horizontal wires is 5 μm, and the distance n between adjacent vertical wires is 5 μm.

[0144] Clean the arranged stainless steel wires. For the first procedure, use a degreasing agent for cleaning. For the second procedure, use hot water at 50 °C for cleaning. For the third procedure, use cold water at 20 °C for cleaning. Repeat the cleaning twice.

[0145] Apply solder to the contact points of the horizontal and vertical wires. The solder used is a tin-based filler metal. Then use a scraper to scrape off the excess solder. Put the mesh plate wound with stainless steel wires into a vacuum oven and bake at 250 °C for 10 min. Then cool to 25 °C.

[0146] Flatten the arranged stainless steel wires at the contact points of the horizontal and vertical wires.

[0147] The size of the obtained mesh is 100 * 100 mm.

[0148] Example 5

[0149] The net is prepared by the following steps:

[0150] A stainless steel wire with a diameter of 10 μm (single wire tensile strength of 1800 MPa) is used to wind the net plate. First, the horizontal wires are wound, and then the vertical wires are wound. The horizontal wires form a layer in contact with the net plate, and the vertical wires form another layer above the horizontal wires. The contact angle between the horizontal wires and the vertical wires is 10°. The stainless steel wire is cleaned before winding the net plate. In the first process, it is cleaned with a degreasing agent, in the second process, it is cleaned with hot water at 50 °C, and in the third process, it is cleaned with cold water at 20 °C. The distance m between adjacent horizontal wires is 35 μm, and the distance n between adjacent vertical wires is 35 μm.

[0151] The arranged stainless steel wires are flattened at the contact points of the horizontal wires and the vertical wires.

[0152] Solder is applied to the contact points of the horizontal wires and the vertical wires. The solder used is a tin-based brazing filler metal. Then the excess solder is scraped off with a scraper. The net plate wound with stainless steel wires is placed in a vacuum oven and baked at 250 °C for 10 min. Then it is cooled to 25 °C.

[0153] The obtained net has a specification of 50 * 50 mm.

[0154] Example 6

[0155] The net is prepared by the following steps:

[0156] A tungsten wire with a diameter of 9 μm (single wire tensile strength of 3000 MPa) is used to wind the net plate. First, the vertical wires are wound, and then the horizontal wires are wound. The vertical wires form a layer in contact with the net plate, and the horizontal wires form another layer above the vertical wires. The distance m between adjacent horizontal wires is 5 μm, and the distance n between adjacent vertical wires is 5 μm. As Figure 9 shown, the contact angle between the horizontal wires and the vertical wires is 45°.

[0157] The arranged tungsten wires are flattened at the contact points of the horizontal wires and the vertical wires.

[0158] The arranged tungsten wires are cleaned. In the first process, they are cleaned with a NaOH solution of degreasing agent, in the second process, they are cleaned with hot water at 50 °C, and in the third process, they are cleaned with cold water at 20 °C. The cleaning is repeated once.

[0159] All the horizontal wires and all the vertical wires are put into a mold as a whole, and then plastic is injected to form a film on the surfaces of all the horizontal wires and all the vertical wires, thereby fixing all the horizontal wires and all the vertical wires.

[0160] The size of the obtained mesh is 400*400mm.

[0161] Example 7

[0162] The mesh is prepared by the following steps:

[0163] Tungsten wires with a diameter of 9μm (single-wire tensile strength of 3000MPa) are used to wind the mesh plate. First, the longitudinal wires are wound, and then the transverse wires are wound. The longitudinal wires form a layer in contact with the mesh plate, and the transverse wires form another layer above the longitudinal wires. The distance m between adjacent transverse wires is 35μm, and the distance n between adjacent longitudinal wires is 35μm. As Figure 9 shown, the angle between the transverse wires and the longitudinal wires is 45°.

[0164] The arranged tungsten wires are flattened at the contact points of the transverse and longitudinal wires.

[0165] The arranged tungsten wires are cleaned. The first procedure uses a NaOH solution of degreaser for cleaning, the second procedure uses hot water at 50°C for cleaning, and the third procedure uses cold water at 20°C for cleaning. The cleaning is repeated twice.

[0166] Solder is applied to the contact points of the transverse and longitudinal wires. The solder used is a tin-based brazing filler metal. Then, the excess solder is scraped off with a squeegee. The mesh plate wound with tungsten wires is placed in a vacuum oven and baked at 250°C for 10 minutes. Then it is cooled to 25°C.

[0167] The size of the obtained mesh is 300*300mm.

[0168] Example 8

[0169] The mesh is prepared by the following steps:

[0170] Tungsten wires with a diameter of 9μm (single-wire tensile strength of 3000MPa) are used to wind the mesh plate, and the whole is flattened before winding the mesh plate. After the flattening treatment and before winding the mesh plate, the tungsten wires are cleaned. The first procedure uses a degreaser for cleaning, the second procedure uses hot water at 50°C for cleaning, and the third procedure uses cold water at 20°C for cleaning. First, the longitudinal wires are wound, and then the transverse wires are wound. The longitudinal wires form a layer in contact with the mesh plate, and the transverse wires form another layer above the longitudinal wires. The distance m between adjacent transverse wires is 35μm, and the distance n between adjacent longitudinal wires is 33μm. As Figure 8 shown, the contact angle between the transverse wires and the longitudinal wires is 90°.

[0171] Put the wire mesh with tungsten wire wound on it into the electroplating tank, electroplate about 3 - 4 μm thick tin, then take out the wire mesh and put it into a vacuum oven. Bake at 250 °C for 10 min to melt the tin plating. Due to the attraction of the slit to the liquid, the melted tin will automatically gather at the contact points of the horizontal and vertical lines. Then cool it to 25 °C.

[0172] The size of the obtained mesh is 200 * 200 mm.

[0173] Example 9

[0174] Prepare the mesh by the following steps:

[0175] Use tungsten wire with a diameter of 20 μm (single - wire tensile strength is 4000 MPa) to wind the wire mesh. First wind the vertical lines, and then wind the horizontal lines. The vertical lines form a layer in contact with the wire mesh, and the horizontal lines form another layer above the vertical lines. The contact angle between the horizontal and vertical lines is 10°. The distance m between adjacent horizontal lines is 3 μm, and the distance n between adjacent vertical lines is 5 μm.

[0176] Clean the arranged tungsten wire. In the first process, use a degreaser to clean it. In the second process, use hot water at 50 °C to clean it. In the third process, use cold water at 20 °C to clean it.

[0177] Apply glue at the contact points of the horizontal and vertical lines, heat at 170 °C for 30 min to cure the glue.

[0178] Flatten the fixed tungsten wire at the contact points of the horizontal and vertical lines.

[0179] The size of the obtained mesh is 100 * 100 mm.

[0180] Example 10

[0181] Prepare the mesh by the following steps:

[0182] Use tungsten wire with a diameter of 20 μm (single - wire tensile strength is 4000 MPa) to wind the wire mesh. First wind the vertical lines, and then wind the horizontal lines. The vertical lines form a layer in contact with the wire mesh, and the horizontal lines form another layer above the vertical lines. The contact angle between the horizontal and vertical lines is 10°. The distance m between adjacent horizontal lines is 3 μm, and the distance n between adjacent vertical lines is 3 μm.

[0183] Clean the arranged tungsten wire. In the first process, use NaOH solution of degreaser to clean it. In the second process, use hot water at 50 °C to clean it. In the third process, use cold water at 20 °C to clean it. Repeat the cleaning once.

[0184] Put the wire mesh with tungsten wire wound on it into the electroplating bath, electroplate about 3 - 4 μm thick tin, then take out the wire mesh and put it into a vacuum oven. Bake it at 250 °C for 10 min to melt the electroplated tin. Due to the attraction of the slit to the liquid, the melted tin will automatically gather at the contact points of the horizontal and vertical lines. Then cool it to 25 °C.

[0185] Flatten the fixed tungsten wire at the contact of the horizontal and vertical lines.

[0186] The size of the obtained mesh is 50 * 50 mm.

[0187] Example 11

[0188] Prepare the mesh by the following steps:

[0189] Wind the wire mesh with carbon fiber filaments with a diameter of 5 μm (single - wire tensile strength of 3000 MPa). First wind the horizontal lines and then the vertical lines. The horizontal lines form a layer in contact with the wire mesh, and the vertical lines form another layer above the horizontal lines. The contact angle between the horizontal and vertical lines is 10°. The distance m between adjacent horizontal lines is 5 μm, and the distance n between adjacent vertical lines is 3 μm.

[0190] Clean the arranged carbon fiber filaments. In the first process, clean them with the degreasing agent NaOH solution. In the second process, clean them with hot water at 50 °C. In the third process, clean them with cold water at 20 °C. Repeat the cleaning once.

[0191] Put the wire mesh with carbon fiber filaments wound on it into the electroplating bath, electroplate about 3 - 4 μm thick tin, then take out the wire mesh and put it into a vacuum oven. Bake it at 250 °C for 10 min to melt the electroplated tin. Due to the attraction of the slit to the liquid, the melted tin will automatically gather at the contact points of the horizontal and vertical lines. Then cool it to 25 °C.

[0192] The size of the obtained mesh is 50 * 50 mm.

[0193] Example 12

[0194] Prepare the mesh by the following steps:

[0195] Wind the wire mesh with carbon fiber filaments with a diameter of 5 μm (single - wire tensile strength of 3000 MPa). First wind the horizontal lines and then the vertical lines. The horizontal lines form a layer in contact with the wire mesh, and the vertical lines form another layer above the horizontal lines. The contact angle between the horizontal and vertical lines is 10°. The distance m between adjacent horizontal lines is 33 μm, and the distance n between adjacent vertical lines is 35 μm.

[0196] Clean the arranged carbon fiber filaments. For the first step, clean them with NaOH solution as a degreaser. For the second step, clean them with hot water at 50 °C. For the third step, clean them with cold water at 20 °C. Repeat the cleaning once.

[0197] Apply glue at the contact points of the horizontal and vertical lines. Let it stand, and allow the excess glue to flow away under the action of gravity, and wait for the glue to cure.

[0198] The size of the obtained net is 100*100 mm.

[0199] Example 13

[0200] Prepare the net by the following steps:

[0201] Wind the carbon fiber filaments with a diameter of 7 μm (single wire tensile strength of 7000 MPa) around the net plate. First wind the horizontal lines, and then the vertical lines. The horizontal lines form a layer in contact with the net plate, and the vertical lines form another layer above the horizontal lines. The contact angle between the horizontal and vertical lines is 45°. The distance m between adjacent horizontal lines is 3 μm, and the distance n between adjacent vertical lines is 3 μm.

[0202] Clean the arranged carbon fiber filaments. For the first step, clean them with NaOH solution as a degreaser. For the second step, clean them with hot water at 50 °C. For the third step, clean them with cold water at 20 °C. Repeat the cleaning once.

[0203] Apply solder at the contact points of the horizontal and vertical lines. The solder used is tin-based brazing filler metal. Then scrape off the excess solder with a scraper. Place the net plate wound with carbon fiber filaments into a vacuum oven and bake at 250 °C for 10 min. Then cool it to 25 °C.

[0204] The size of the obtained net is 200*200 mm.

[0205] Example 14

[0206] Prepare the net by the following steps:

[0207] Wind the carbon fiber filaments with a diameter of 7 μm (single wire tensile strength of 7000 MPa) around the net plate. The carbon fiber filaments are cleaned before winding around the net plate. For the first step, clean them with a degreaser. For the second step, clean them with hot water at 50 °C. For the third step, clean them with cold water at 20 °C. First wind the horizontal lines, and then the vertical lines. The horizontal lines form a layer in contact with the net plate, and the vertical lines form another layer above the horizontal lines. The contact angle between the horizontal and vertical lines is 45°. The distance m between adjacent horizontal lines is 3 μm, and the distance n between adjacent vertical lines is 3 μm.

[0208] Put the mesh plate wound with carbon fiber filaments into the electroplating bath, electroplate tin with a thickness of 3 - 4μm, then take out the mesh plate and put it into a vacuum oven. Bake at 250°C for 10min to melt the electroplated tin. Due to the attraction of the slit to the liquid, the melted tin will automatically gather at the contact points of the horizontal and vertical lines. Then cool to 25°C.

[0209] The size of the obtained mesh is 300*300mm.

[0210] Example 15

[0211] Prepare the mesh by the following steps:

[0212] Wind the mesh plate with carbon fiber filaments with a diameter of 7μm (single wire tensile strength is 7000MPa). First wind the horizontal lines, and then wind the vertical lines. The horizontal lines form a layer in contact with the mesh plate, and the vertical lines form another layer above the horizontal lines. The contact angle between the horizontal and vertical lines is 90°. The distance m between adjacent horizontal lines is 3μm, and the distance n between adjacent vertical lines is 3μm.

[0213] Clean the arranged carbon fiber filaments. In the first procedure, use a degreaser to clean. In the second procedure, use hot water at 50°C to clean. In the third procedure, use cold water at 20°C to clean. Repeat the cleaning once.

[0214] Apply glue at the contact points of the horizontal and vertical lines. Let it stand, and use the gravity to make the excess glue flow away, and wait for the glue to cure.

[0215] The size of the obtained mesh is 400*400mm.

[0216] Comparative Example 1

[0217] Adopt the existing weaving process, use stainless steel wires with a diameter of 10μm (single wire tensile strength is 1800MPa), and weave the mesh in a way that the warp and weft lines cross up and down (as shown in Figure 5 ), the distance between adjacent warp lines is 10μm, and the distance between adjacent weft lines is 10μm.

[0218] Some of the vertical lines broke during the weaving process.

[0219] Comparative Example 2

[0220] Adopt the existing weaving process, use tungsten wires with a diameter of 9μm (single wire tensile strength is 3000MPa), and weave the mesh in a way that the warp and weft lines cross up and down (as shown in Figure 5 ), the distance between adjacent warp lines is 9μm, and the distance between adjacent weft lines is 9μm.

[0221] Some of the vertical lines broke during the weaving process.

[0222] Comparative Example 3

[0223] Using the existing weaving process, a stainless steel wire with a diameter of 15 μm (single wire tensile strength of 2000 MPa) is used to weave a mesh in a way that the warp and weft threads cross each other vertically and horizontally (as shown in Figure 5 ), the spacing between adjacent warp threads is 15 μm, and the spacing between adjacent weft threads is 15 μm.

[0224] The size of the obtained mesh is 400*400 mm.

[0225] Comparative Example 4

[0226] Using the existing weaving process, a tungsten wire with a diameter of 20 μm (single wire tensile strength of 4000 MPa) is used to weave a mesh in a way that the warp and weft threads cross each other vertically and horizontally (as shown in Figure 5 ), the spacing between adjacent warp threads is 20 μm, and the spacing between adjacent weft threads is 20 μm.

[0227] The size of the obtained mesh is 300*300 mm.

[0228] Test Example

[0229] The meshes in Examples 1 - 15 and the meshes in Comparative Examples 3 - 4 are respectively used for silicon wafer screen printing to print the grid lines as shown in Figure 10 .

[0230] For this specific pattern, during the production process of Examples 1 - 15, only the spacing of some wires needs to be adjusted. The spacing of the longitudinal wires corresponding to the grid line part is increased (for example, adjusted to 2 mm; according to actual needs, it can even be a value greater than 2 mm such as 20 mm, or a value less than 2 mm such as 0.0001 mm), while the spacing of the longitudinal wires in the remaining parts is decreased (for example, adjusted to 0.0001 mm). There is no need to remove the wires, and the overall mesh tension does not change; while in the meshes of Comparative Examples 4 - 5, some wires need to be burned and removed by a laser device, and the mesh tension becomes smaller. And because the limit of the wire spacing during the weaving process is about 15 - 20 μm, the mesh tension lost by removing the wires cannot be compensated by reducing the spacing of some wires and increasing some wires during the mesh weaving process.

[0231] Then, the meshes of the foregoing examples and comparative examples are respectively used for silicon wafer screen printing, and a 3D profilometer (manufacturer: Keyence; model: VR - 3000) is used to observe the obtained grid lines. The observation results show that the grid lines obtained by using the meshes in the examples for silicon wafer screen printing have a uniform thickness, reducing the possibility of broken grids and also reducing the influence on electrical parameters such as the resistance of the grid lines, achieving better printing quality. And as shown in Figure 11As shown, the grid line thickness obtained by screen printing on the silicon wafer in the comparative example is not uniform, which increases the possibility of broken grids and also increases the influence on electrical parameters such as the resistance of the grid lines, resulting in poor printing quality.

Claims

1. A net, characterized in that: It includes an area for printing, which is composed of micron-sized bidirectionally interlaced silk threads, wherein the diameter of the micron-sized silk threads is 0.1-50 μm, or the long diameter thereof is 5-80 μm, or the short diameter thereof is 2-30 μm; The silk threads are divided into transverse threads and longitudinal threads, all transverse threads are located in the same layer, and all longitudinal threads are located in another layer different from the layer where the transverse threads are located; Each transverse line is arranged parallel to each other; each longitudinal line is arranged parallel to each other; the transverse line contacts the longitudinal line at an angle of 0-90°, and at each contact point between the transverse line and the longitudinal line, the transverse line is fixedly connected to the longitudinal line; The wire is made of metal.

2. The net according to claim 1, wherein The transverse lines are located in the upper layer, and the longitudinal lines are located in the lower layer; or the transverse lines are located in the lower layer, and the longitudinal lines are located in the upper layer.

3. The net according to claim 1, wherein The distances m between adjacent transverse lines may be equal or unequal; and / or the distances n between adjacent longitudinal lines may be equal or unequal.

4. The net according to claim 1, wherein All transverse lines have circular radial surfaces, and all longitudinal lines have circular radial surfaces.

5. The net according to claim 1, wherein All transverse lines have elliptical radial surfaces, and all longitudinal lines have circular radial surfaces.

6. The net according to claim 1, wherein All longitudinal lines have oval diametrical surfaces and all transverse lines have circular diametrical surfaces.

7. The net according to claim 1, wherein All transverse lines have elliptical radial surfaces, and all longitudinal lines have elliptical radial surfaces.

8. The net according to claim 1, wherein Part of all the transverse lines and / or all the longitudinal lines have an elliptical radial surface, and the remaining parts have a circular radial surface.

9. The net according to claim 1, wherein A contact angle between the transverse lines and the longitudinal lines is 90° or less.

10. The net according to claim 1, wherein The geometric shape of the mesh formed by the transverse lines and the longitudinal lines is a parallelogram.

11. The net according to claim 1, wherein The wire is a tungsten wire or a steel wire.

12. The net according to claim 1, wherein The silk threads are arranged on the mesh plate.

13. The net according to claim 4, wherein The diameter of the circular diameter surface is 0.1-50 μm.

14. The net according to claim 5, wherein The major diameter of the elliptical diameter surface is 5-80 μm.

15. The net according to claim 5, wherein The short diameter of the micron-sized wire with an elliptical diameter surface is 2-30 μm.

16. The net according to claim 1, wherein The mesh size of the net is 100-2000 meshes.

17. The net according to claim 1, wherein The fixed connection method is welding or gluing.

18. The net according to claim 1, wherein The single-line tensile strength of the transverse threads and the single-line tensile strength of the longitudinal threads are each independently 1000-7000 MPa.

19. The net according to claim 1, wherein The wire is a stainless steel wire, the long diameter of which is 9-80 μm, and / or the short diameter of which is 2-30 μm, and / or the diameter of which is 6-50 μm; the tensile strength of the single wire ranges from 1000 to 4000 MPa.

20. The net of claim 1, wherein: The wire is a tungsten wire, the long diameter of which is 6-80 μm, and / or the short diameter of which is 2-30 μm, and / or the diameter of which is 3-50 μm; the tensile strength of the single wire is in the range of 3000-6000 MPa.

21. The net of claim 1, wherein: The net is arranged on the mesh cloth.

22. The net of claim 1, wherein: The overall specification of the net is (50-800)*(50-800)mm.

23. The net according to claim 4, wherein All parts of all transverse lines have circular radial surfaces, and all parts of all longitudinal lines have circular radial surfaces.

24. The net according to claim 5, wherein All parts of all transverse lines have elliptical radial surfaces, and all parts of all longitudinal lines have circular radial surfaces.

25. The net according to claim 6, wherein All portions of all longitudinal lines have elliptical radial surfaces, and all portions of all transverse lines have circular radial surfaces.

26. The net according to claim 7, wherein All parts of all transverse lines have elliptical radial surfaces, and all parts of all longitudinal lines have elliptical radial surfaces.

27. The net according to claim 8, wherein The contact part of the transverse line and the longitudinal line has an elliptical radial surface, while the remaining part has a circular radial surface.

28. The net of claim 10, wherein: The mesh formed by the transverse lines and the longitudinal lines has a geometric shape of a rectangle or a rhombus.

29. The net of claim 12, wherein: The wires are wound and arranged on the mesh plate.

30. The net of claim 13, wherein: The diameter of the circular radial surface is 1-30 μm.

31. The net of claim 14, wherein: The major diameter of the elliptical diameter surface is 5-50 μm.

32. The net of claim 15, wherein: The short diameter of the silk thread is 3-20 μm.

33. The net of claim 16, wherein: The mesh size of the net is 200-1000 meshes.

34. The net of claim 22, wherein: The overall specification of the net does not exceed 400*400mm.

35. The net of claim 3, wherein: The distance m between adjacent transverse lines may each independently be 0-2 mm.

36. The net of claim 30, wherein: The diameter of the circular radial surface is 5-10 μm or 11-20 μm.

37. The net of claim 30, wherein: The diameter of the circular radial surface is 20-30 μm.

38. The net of claim 31, wherein: The major diameter of the elliptical diameter surface is 5-10 μm or 11-20 μm.

39. The net of claim 31, wherein: The major diameter of the elliptical diameter surface is 20-50 μm.

40. The net of claim 32, wherein: The short diameter of the silk thread is 3-10 μm or 11-20 μm.

41. The net of claim 33, wherein: The mesh size of the net is 200-520 meshes.

42. The net of claim 33, wherein: The mesh size of the net is 520-800 meshes.

43. The net of claim 33, wherein: The mesh size of the net is 800-1000 meshes.

44. The net of claim 3, wherein: The distance n between adjacent longitudinal lines may each independently be 0-2 mm.

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