Parallel target magnetron sputtering equipment

Abstract

According to the parallel target magnetron sputtering equipment provided by the invention, the cathode magnet and the anode magnet which are parallel and opposite are arranged, so that an electromagnetic field space is formed between the cathode magnet and the anode magnet, and in magnetron sputtering, because the sputtering energy of target material particles in the direction perpendicular to the target material is relatively high, the target material particles are sputtered to the other target material which is arranged in parallel; the sputtering energy of the target material particles in the non-vertical direction is relatively low, and the target material particles are finally deposited on the calcium-silicon laminated battery under the constraint action of the electromagnetic field space, so that the damage caused by magnetron sputtering can be reduced. In addition, the parallel target magnetron sputtering equipment further comprises a cooling assembly, so that the temperature of the calcium-silicon laminated battery can be controlled within a certain range, the influence of high temperature on the calcium-silicon laminated battery can be reduced, and the quality of the calcium-silicon laminated battery can be improved.

Description

Technical Field

[0001] This application mainly relates to the technical field of magnetron sputtering coating, and particularly relates to a parallel target magnetron sputtering device. Background Art

[0002] Magnetron sputtering is an important method in the preparation method of perovskite solar cells. By generating target particles and sputtering them onto the surface of the stacked solar cell, the top cathode of the stacked solar cell is formed. However, the sputtering energy of some target particles is relatively high, which may cause damage to the surface of the stacked solar cell, thereby affecting the quality of the finally produced solar cell. Utility Model Content

[0003] The purpose of this application is to provide a parallel target magnetron sputtering device, which is used to reduce the damage to the surface of the solar cell during magnetron sputtering, thereby improving the quality of the solar cell.

[0004] To achieve the above object, in a first aspect, this application provides a parallel target magnetron sputtering device, including: a magnetic component, the magnetic component includes a cathode magnet and an anode magnet with magnetic conjugation, the cathode magnet and the anode magnet are arranged parallel and opposite to each other, and an electromagnetic field space is formed between the cathode magnet and the anode magnet; a target, arranged on one side of the cathode magnet facing the anode magnet, and arranged on one side of the anode magnet facing the cathode magnet; a cooling component, arranged above the electromagnetic field space, the cooling component includes a cooling gravity plate, and the lower surface of the cooling gravity plate is in contact with the calcium-silicon stacked solar cell.

[0005] In some embodiments, the cooling gravity plate is perpendicular to the cathode magnet and the anode magnet.

[0006] In some embodiments, the cooling component further includes: a liquid inlet pipe, a liquid outlet pipe and a rotating column, the liquid inlet pipe and the liquid outlet pipe are arranged on the periphery of the cooling gravity plate, and the rotating column is arranged on the periphery of the liquid inlet pipe and the liquid outlet pipe.

[0007] In some embodiments, the material of the target is any one of IZO and TCO.

[0008] In some embodiments, the thickness of the target is 35nm - 85nm.

[0009] In some embodiments, the calcium-silicon stacked solar cell includes a silver electrode, a crystalline silicon solar cell, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer and a cathode layer stacked in sequence from bottom to top, wherein the silver electrode is in contact with the lower surface of the cooling gravity plate.

[0010] In some embodiments, the buffer layer is made of any one of IZO and TCO, and the thickness of the buffer layer is 10 nm - 20 nm.

[0011] In some embodiments, the material of the hole transport layer is NiOx, where the value range of x is 2 or 3.

[0012] In some embodiments, the calcium-silicon tandem battery further includes a silver grid and an antireflection and antireflection enhancement layer stacked in sequence from bottom to top, and the lower surface of the silver grid is in contact with the cathode layer.

[0013] In some embodiments, the calcium-silicon tandem battery further includes a packaging layer, and the packaging layer wraps around the periphery of the antireflection and antireflection enhancement layer, the silver grid, the cathode layer, the buffer layer, the electron transport layer, the perovskite layer, and the hole transport layer.

[0014] Compared with the prior art, the present application has the following advantages:

[0015] The present application provides a parallel target magnetron sputtering device. By setting a cathode magnet and an anode magnet opposite to each other in parallel, an electromagnetic field space is formed between the cathode magnet and the anode magnet. In magnetron sputtering, since the sputtering energy of the target particles in the direction perpendicular to the target is relatively high, when they are sputtered onto another target arranged in parallel, it will not cause damage to the calcium-silicon tandem battery. Instead, the sputtering energy of the target particles in the non-perpendicular direction is relatively low, and finally deposits on the calcium-silicon tandem battery under the constraint of the electromagnetic field space. Therefore, the damage caused by magnetron sputtering can be reduced. In addition, the parallel target magnetron sputtering device further includes a cooling component, which can control the temperature of the calcium-silicon tandem battery within a certain range, thereby reducing the influence of high temperature on the calcium-silicon tandem battery, and further improving the quality of the calcium-silicon tandem battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are provided to further understand the present application. They are incorporated and constitute a part of this application. The accompanying drawings illustrate the embodiments of the present application and, together with this specification, serve to explain the principles of the present application. In the accompanying drawings:

[0017] Figure 1 is a schematic diagram of a parallel target magnetron sputtering device provided by an exemplary embodiment of the present application;

[0018] Figure 2 is a schematic diagram of a calcium-silicon tandem battery provided by an exemplary embodiment of the present application;

[0019] Figure 3 is a schematic diagram of another calcium-silicon tandem battery provided by an exemplary embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application. For those of ordinary skill in the art, without creative efforts, the present application can also be applied to other similar scenarios based on these drawings. Unless obvious from the language context or otherwise stated, the same reference numerals in the drawings represent the same structure or operation.

[0021] As shown in the present application and the claims, unless the context clearly indicates an exception, words such as "a", "an", "one", and / or "the" are not specifically singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of the clearly identified steps and elements, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0022] In the description of the present application, it should be understood that the orientation or positional relationship indicated by orientation words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present application and simplifying the description. Without contrary description, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation on the protection scope of the present application; the orientation words "inside, outside" refer to the inside and outside relative to the contour of each component itself.

[0023] For the convenience of description, spatial relative terms such as "above...", "over...", "on the upper surface of...", "above" can be used here to describe the spatial positional relationship of a device or feature shown in the figure with other devices or features. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation described in the figure of the device. For example, if the device in the accompanying drawing is inverted, the device described as "above other devices or structures" or "over other devices or structures" will then be positioned "below other devices or structures" or "under other devices or structures". Thus, the exemplary term "above..." can include both the orientations of "above..." and "below...". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and corresponding interpretations are made for the spatial relative descriptions used here.

[0024] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is merely for the convenience of differentiating the corresponding components. Without additional statements, the above terms have no special meanings, and thus should not be construed as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant according to his or her judgment, and their detailed meanings are described in the relevant parts of this description. In addition, it is required to understand this application not only through the actual terms used, but also through the meanings implied by each term.

[0025] One aspect of the present application provides a parallel target magnetron sputtering device. Referring to Figure 1 , the device includes a magnetic component 1, a target 2, and a cooling component 3. The magnetic component 1 includes a cathode magnet 11 and an anode magnet 12 with magnetic conjugation, and the cathode magnet 11 and the anode magnet 12 are arranged parallel and opposite to each other. An electromagnetic field space is formed between the cathode magnet 11 and the anode magnet 12. There are two targets 2. One of the targets 2 is arranged on the side of the cathode magnet 12 facing the anode magnet 11, and the other is arranged on the side of the anode magnet 11 facing the cathode magnet 12. The cooling component 3 is arranged above the electromagnetic field space. As shown in Figure 1 , the z direction shown is the direction upward along the electromagnetic field space. The cooling component 3 includes a cooling gravity plate 31. The lower surface of the cooling gravity plate 31 is in contact with the calcium-silicon laminated battery 4.

[0026] In magnetron sputtering, the electromagnetic field space is filled with argon gas (not labeled in Figure 1 ), and the charged particles generated by the ionization of argon gas will be confined within the electromagnetic field space and will not escape. The target 2 is bombarded by the charged particles to generate target particles and eject them in a fan shape. Among them, the sputtering energy of the target particles in the direction perpendicular to the target 2 is relatively high, and they are sputtered onto another parallel target 2, avoiding damage to the calcium-silicon laminated battery 4. The sputtering energy of the target particles in the non-perpendicular direction is relatively low, and they are finally deposited on the calcium-silicon laminated battery 4 under the constraint of the electromagnetic field space. Since the impact on the surface of the calcium-silicon laminated battery 4 caused by the target particles with relatively high sputtering energy is reduced, the damage caused by magnetron sputtering can be reduced, and the damage to the calcium-silicon laminated battery 4 can be reduced.

[0027] In some embodiments, the cooling gravity plate 31 is perpendicular to the cathode magnet 12 and the anode magnet 11. Continuing to refer to Figure 1 , the cathode magnet 11 and the anode magnet 12 are arranged parallel and opposite to each other, and the cooling gravity plate 31 is perpendicular to the cathode magnet 12 and the anode magnet 11 respectively.

[0028] Referring to Figure 1, in some embodiments, the cooling assembly 3 further includes: a liquid inlet pipe 32, a liquid outlet pipe 33, and a rotating column 34. The liquid inlet pipe 32 and the liquid outlet pipe 33 are arranged on the periphery of the cooling gravity plate 31, and the rotating column 34 is arranged on the periphery of the liquid inlet pipe 32 and the liquid outlet pipe 33. In magnetron sputtering, the temperature of the cooling gravity plate 31 is reduced through the rotating column 34, the liquid inlet pipe 32, and the liquid outlet pipe 33. Since the lower surface of the cooling gravity plate 31 is in contact with the calcium-silicon stacked battery 4, the calcium-silicon stacked battery 4 can be cooled to prevent damage to the calcium-silicon stacked battery 4 caused by high temperature.

[0029] In some embodiments, the cooling gravity plate 31 cools the calcium-silicon stacked battery 4 to keep the temperature of the calcium-silicon stacked battery 4 at 15°C - 25°C.

[0030] In some embodiments, the material of the target 2 is any one of IZO and TCO, and the thickness of the target 2 is 35nm - 85nm.

[0031] Reference Figure 2 , the calcium-silicon stacked battery 4 includes a silver electrode 40, a crystalline silicon battery 41, a hole transport layer 42, a perovskite layer 43, an electron transport layer 44, a buffer layer 45, and a cathode layer 46 stacked in sequence from bottom to top.

[0032] Combined Figure 2 and Figure 1 , the silver electrode 40 is in contact with the lower surface of the cooling gravity plate 31. In other words, the silver electrode 40, the crystalline silicon battery 41, the hole transport layer 42, the perovskite layer 43, the electron transport layer 44, the buffer layer 45, and the cathode layer 46 are stacked in sequence along the direction away from the lower surface of the cooling gravity plate 31. Continuing to refer Figure 2 , the Figure 2 shown y-direction is taken as the direction away from the lower surface of the cooling gravity plate 31. Along this direction, the silver electrode 40, the crystalline silicon battery 41, the hole transport layer 42, the perovskite layer 43, the electron transport layer 44, the buffer layer 45, and the cathode layer 46 are stacked in sequence to form the calcium-silicon stacked battery 4.

[0033] In some embodiments, the material of the buffer layer 45 is any one of IZO and TCO. The thickness of the buffer layer 45 is 10nm - 20nm, which is relatively thin. Therefore, in magnetron sputtering, particles can be deposited at a lower power to ensure that the particles generated during sputtering will not affect the calcium-silicon stacked battery 4.

[0034] In some embodiments, the material of the electron transport layer 44 can be made of C60 material, and the specific preparation method can adopt evaporation coating. The perovskite layer 43 can be made of an interface material and a passivation material. The material of the hole transport layer 42 is NiOx, where the value range of x is 2 or 3.

[0035] In some embodiments, the crystalline silicon cell 42 can also be replaced with conductive glass to form a single-junction perovskite cell.

[0036] Referring to Figure 3 , in some embodiments, the calcium-silicon stacked cell 4 further includes a silver grid 47 and an antireflection and antireflection enhancement layer 48 stacked in sequence from bottom to top. The lower surface of the silver grid 47 is in contact with the cathode layer 46.

[0037] The functions of the silver grid 47 and the antireflection and antireflection enhancement layer 48 are to improve the optical and electrical properties of the cathode layer 46 while ensuring light transmission. The lower surface of the silver grid 47 is in contact with the upper surface of the cathode layer 46, that is, the silver grid 47 and the antireflection and antireflection enhancement layer 48 are continuously stacked in the direction away from the lower surface of the cooling gravity plate 31.

[0038] Continuing to refer to Figure 3 , in some embodiments, the calcium-silicon stacked cell 4 further includes a packaging layer 49, and the packaging layer 49 wraps around the periphery of the antireflection and antireflection enhancement layer 48, the silver grid 47, the cathode layer 46, the buffer layer 45, the electron transport layer 44, the perovskite layer 43, and the hole transport layer 42.

[0039] The function of the packaging layer 49 is to block the antireflection and antireflection enhancement layer 48, the silver grid 47, the cathode layer 46, the buffer layer 45, the electron transport layer 44, the perovskite layer 43, and the hole transport layer 42 from external water, oxygen, and corrosion resistance, so that the optical and electrical properties of the calcium-silicon stacked cell 4 are stable.

[0040] In summary, the present application provides a parallel target magnetron sputtering device, including a magnetic component 1, a target 2, and a cooling component 3. By setting the cathode magnet 11 and the anode magnet 12 opposite to each other in parallel, an electromagnetic field space is formed between the cathode magnet 11 and the anode magnet 12. In magnetron sputtering, since the sputtering energy of the target particles in the direction perpendicular to the target is relatively high, when they are sputtered onto another target arranged in parallel, it will not cause damage to the calcium-silicon stacked cell 4. The sputtering energy of the target particles in the non-perpendicular direction is relatively low, and finally deposits on the calcium-silicon stacked cell 4 under the constraint of the electromagnetic field space. Therefore, the damage caused by magnetron sputtering can be reduced. In addition, the temperature 4 of the calcium-silicon stacked cell can be controlled within a certain range by the cooling component 3, thereby reducing the influence of high temperature on the calcium-silicon stacked cell 4, and further improving the quality of the calcium-silicon stacked cell 4.

[0041] The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is only an example and does not constitute a limitation to the present application. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and corrections to the present application. Such modifications, improvements, and corrections are proposed in the present application, so such modifications, improvements, and corrections still belong to the spirit and scope of the exemplary embodiments of the present application.

[0042] Meanwhile, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment", "an embodiment", and / or "some embodiments" mean a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that the "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.

[0043] Similarly, it should be noted that, in order to simplify the description of this application disclosure and thus help the understanding of one or more embodiments, in the previous description of the embodiments of this application, sometimes multiple features are grouped into one embodiment, drawing, or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than those mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0044] In some embodiments, numbers are used to describe components and the quantity of attributes. It should be understood that such numbers used for the description of embodiments are, in some examples, modified by the modifiers "about", "approximate", or "substantially". Unless otherwise stated, "about", "approximate", or "substantially" indicate that the said numbers allow a variation of ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, and such approximate values can change according to the characteristics required by individual embodiments. In some embodiments, the numerical parameters should consider the specified significant digits and adopt the method of retaining general digits. Although the numerical ranges and parameters used to confirm the scope breadth in some embodiments of this application are approximate values, in specific embodiments, the setting of such numerical values is as precise as possible within the feasible range.

[0045] Although this application has been described with reference to the current specific embodiments, those of ordinary skill in the art should recognize that the above embodiments are only used to illustrate this application, and various equivalent changes or substitutions can be made without departing from the spirit of this application. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the spirit of this application, they will fall within the scope of the claims of this application.

Claims

1. A parallel target magnetron sputtering device, characterized in that: include: A magnetic assembly, the magnetic assembly comprising a cathode magnet and an anode magnet which are magnetically conjugated, the cathode magnet and the anode magnet being arranged parallel to each other, and an electromagnetic field space being formed between the cathode magnet and the anode magnet; A target material is arranged on a side of the cathode magnet facing the anode magnet, and is arranged on a side of the anode magnet facing the cathode magnet; A cooling component is arranged above the electromagnetic field space, and the cooling component includes a cooling gravity plate, and the lower surface of the cooling gravity plate is in contact with the calcium silicon stacked battery.

2. The parallel target magnetron sputtering device according to claim 1, characterized in that: The cooling gravity plate is perpendicular to the cathode magnet and the anode magnet.

3. The parallel target magnetron sputtering device according to claim 1, characterized in that: The cooling assembly further includes: a liquid inlet pipe, a liquid outlet pipe and a rotating column. The liquid inlet pipe and the liquid outlet pipe are arranged on the periphery of the cooling gravity plate, and the rotating column is arranged on the periphery of the liquid inlet pipe and the liquid outlet pipe.

4. The parallel target magnetron sputtering device according to claim 1, characterized in that: The target material is made of any one of IZO and TCO.

5. The parallel target magnetron sputtering device according to claim 4, characterized in that: The target material has a thickness of 35nm-85nm.

6. The parallel target magnetron sputtering device according to claim 4, characterized in that: The calcium silicon stacked battery includes a silver electrode, a crystalline silicon battery, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer and a cathode layer stacked in sequence from bottom to top, wherein the silver electrode contacts the lower surface of the cooling gravity plate.

7. The parallel target magnetron sputtering device according to claim 6, characterized in that: The material of the buffer layer is any one of IZO and TCO, and the thickness of the buffer layer is 10nm-20nm.

8. The parallel target magnetron sputtering device according to claim 6, characterized in that: The hole transport layer is made of NiOx, where x is in the range of 2 or 3.

9. The parallel target magnetron sputtering device according to claim 6, characterized in that: The calcium silicon stacked battery further includes a silver grid and an anti-reflection and anti-transmission layer stacked in sequence from bottom to top, and the lower surface of the silver grid is in contact with the cathode layer.

10. The parallel target magnetron sputtering device according to claim 9, characterized in that: The calcium silicon stacked battery further includes an encapsulation layer, which wraps around the anti-reflection and anti-transmission layer, the silver grid, the cathode layer, the buffer layer, the electron transport layer, the perovskite layer and the hole transport layer.

Images